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LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

BFW10 FET transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BFW10 JFET

Abstract: bfw11 jfet jfet bfw10 BFW10 bfw10 equivalent bfw11 EQUIVALENT OF bfw10 BFW11 circuit SYMBOL BFW10 BFW11 MOTOROLA
Text: BFW10 (VqS = 15 Vdc, Id = 0.5 nAdc) BFW11 VGS(off) — — CO CO Vdc Gate Reverse Current (VGS = 20 Vdc, Vds = 0) IGSS — — 0.1 nAdc Gate-Source Voltage (VDS = 15 Vdc, Id = 400 jiAdc) BFW10 VGS 2 — 7.5 , Zero-Gate Voltage Drain Current BFW10 (Vds = 15 Vdc, VGS = o) BFW11 loss 8 4 — 20 10 mAdc SMALL-SIGNAL CHARACTERISTICS Forward Transadmittance BFW10 (Vds = 15 Vdc, VGS = o, f = 1 kHz) BFW11 Yfs 3.5 3.0 — 6.5 6.5 mmhos Output Admittance BFW10 (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) BFW11 Vos _ _ 85 50 ^imhos


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PDF BFW11 2N4416 16enameled BFW10 JFET bfw11 jfet jfet bfw10 BFW10 bfw10 equivalent bfw11 EQUIVALENT OF bfw10 BFW11 circuit SYMBOL BFW10 BFW11 MOTOROLA
BFW10 JFET

Abstract: BFW10 bfw11 jfet bfw11 jfet bfw10 bfw10 equivalent BFW11 circuit SYMBOL BFW10 EQUIVALENT OF bfw10 BFW11 MOTOROLA
Text: bfw10 bfw11 CASE 20-03, STYLE 1 TO-72 (TO-206A) MAXIMUM RATINGS Rating Symbol Value Unit , Cutoff Voltage BFW10 (Vqs = 15 Vdc. Id = 0.5 nAdc) BFW11 VGS(off) — — 00 CO Vdc Gate Reverse Current (VGS = 20 Vdc, VDS = 0) IGSS — — 0.1 nAdc Gate-Source Voltage (VDS = 15 Vdc, Id = 400 ^Adc) BFW10 , CHARACTERISTICS Zero-Gate Voltage Drain Current BFW10 (VDS = 15 Vdc, Vqs = 0) BFW11 'DSS CO — 20 10 mAdc SMALL-SIGNAL CHARACTERISTICS Forward Transadmittance BFW10 (VDS = 15 Vdc, VQS = 0, f = 1 kHz} BFW11 Yfs


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PDF bfw10 bfw11 O-206A) 2N4416 BFW10 JFET bfw11 jfet bfw11 jfet bfw10 bfw10 equivalent BFW11 circuit SYMBOL BFW10 EQUIVALENT OF bfw10 BFW11 MOTOROLA
BGY41

Abstract: BFW10 FET transistor CQY58 germanium germanium transistor zener phc 283 to92 600a transistor bf199 bd643 BTW58
Text: -72 BFW10 BFW13 c„ (PF) 0.85 0.2- 1.5 5 BFW12 (V ) iy j min. f = 1 kHz (mS , types: SOT52. CHARACTERISTICS RATINGS TYPE NUMBER individual total transistor device (mA) ^ g (mA) individual transistor loss (mA) min. total device - V )G (P S (V ) max , BFR101A BFR101B BFR200 BFS21 BFS21A BFT46 BFW10 BFW11 BFW12 BFW13 BFW61 BS107 BS107A BS170 , DIODE; variable capacitance TRANSISTOR ; low power, audio frequency (Rth j-mb > 15 K/W) TRANSISTOR


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PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium germanium transistor zener phc 283 to92 600a transistor bf199 bd643 BTW58
bfw10 transistor

Abstract: pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor BF 245 transistor bf 179 PIN CONFIGURATION BF 494 BF 194 transistor
Text: min max max min/max typ. min/max typ. typ. Package BFW10 • 300 30 0.1 8 3500 , – 028MIN- 0.48 .028 .046 .036 LEAD-3.COLLECTOR BOTTOM VIEW For transistor BF 167, 173 in TO-72 Package Base & , .COLLECTOR 3.EMITTER .060 BOTTOM VIEW Note;For HF. transistor TQ-106 Package 1 ,Base2.Emitter and 3


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PDF O-237 bfw10 transistor pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor BF 245 transistor bf 179 PIN CONFIGURATION BF 494 BF 194 transistor
BFW10 pins

Abstract: TRANSISTOR BFW 11 pin configuration of BFW10 BFW10 CIL 108 BF 494 C bf 494 transistor BF494 BF200 transistor transistor bf 194b
Text: min max max min/max typ. min/max typ. typ. Package BFW10 • 300 30 0.1 8 3500 , – 028MIN- 0.48 .028 .046 .036 LEAD-3.COLLECTOR BOTTOM VIEW For transistor BF 167, 173 in TO-72 Package Base & , .COLLECTOR 3.EMITTER .060 BOTTOM VIEW Note;For HF. transistor TQ-106 Package 1 ,Base2.Emitter and 3


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PDF O-237 BFW10 pins TRANSISTOR BFW 11 pin configuration of BFW10 BFW10 CIL 108 BF 494 C bf 494 transistor BF494 BF200 transistor transistor bf 194b
FET BFW10

Abstract: BFW10 pins OF FET BFW11 OF FET BFW10 BFW10 FET BSV81 BF327 BFW10 FET transistor BFS28 FET BFW11
Text: ) (mW) (fi) DS(off) (fi) Special Features INSULATED GATE FET (MOST) BFR2S TOâ , particularly for chopping applications DUAL INSULATED GATE FET (Tetrode' MOST) Type No.  , * TO—72 BA4 20 - 50 175 300 10 30 - 3 200 •Protected-aate tvoes JUNCTION FET , 3 6 11 7 13 18 15 Gp= 11dB typ. at 800MHz. Rs =47fi BFW10 TO—72 BA3 30 -30 30 10 200 300 8 0.5


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PDF BSV81 h--22-> crt6-25 FET BFW10 BFW10 pins OF FET BFW11 OF FET BFW10 BFW10 FET BF327 BFW10 FET transistor BFS28 FET BFW11
FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Text: SD/Mm T/Mm T/Mm Key to handbook sections A FET 1 LED LCD Mm M P PDT Ph PhC PM R RFP RT = = = = = = , section T T T/Mm T T T T T T/Mm T T/Mm T T Sm Sm Sm Sm Sm Sm Sm Sm Sm Sm FET FET FET FET Sm Sm Sm Sm Sm Sm , P P P P P P P P P P P P P P P P P P P P P P P Sm Sm Sm Sm FET FET FET seos SC05 SC05 SC05 SC05 , SCIO SCIO SCIO SCIO SC14 section FET FET FET FET FET FET Sm Sm FET FET FET FET Sm Sm Sm Sm Sm Sm Sm Sm Sm Sm Sm Sm FET /Mm FET /Mm FET /Mm FET /Mm Mm Mm Mm Mm Mm Mm Mm Mm Mm Mm Mm WBT Mm Mm Mm Mm WBT


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PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Text: =25µV typ) · High Gain (Yfs=30,000µS min) Photo FET · Light Sensitive N-Channel JFET · Second Source , Transistors Lateral DMOS FET Switches MOSFETs N Channel Enhancement Mode P/N N & P Channel , FET D3 P/N D3 D3 D3 LS627 D3 D3 µAmWcm2 min 6.4 BiFET Amplifier D5 D6 , BFS68P BFS70 BFS71 BFS72 BFS73 BFS74 BFS75 BFS76 BFS77 BFS78 BFS79 BFS80 BFT46 BFW10 BFW11


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PDF LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
transistor f6 13003

Abstract: equivalent transistor bj 131-6 BB112 transistor Eb 13003 BM philips om345 transistor bf 175 TRANSISTOR 131-6 BJ 026 Om175 BU705 a1211 lg
Text: power DIODE; variable capacitance TRANSISTOR ; low power, audio frequency (Rth j-mb ^ ^ K/W) TRANSISTOR ; power, audio frequency (Rth j-mb ^ 15 K/W) DIODE; tunnel TRANSISTOR ; low power, high frequency , sensitive TRANSISTOR ; power, high frequency (Rth j-mb ^ 15 K/W) PHOTO-COUPLER R A D IA T IO N DETECTOR , ) CONTROL AND SWITCHING DEVICE; e.g. thyristor, low power ( Rt h j-mb > 15 K/W) TRANSISTOR ; low power , ) TRANSISTOR ; power, switching ( Rt h j-mb 15 K/W) DIODE; m ultiplier, e.g. varactor, step recovery DIODE


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PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 BB112 transistor Eb 13003 BM philips om345 transistor bf 175 TRANSISTOR 131-6 BJ 026 Om175 BU705 a1211 lg
siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Text: FET Design Catalog © 1979 Siliconix incorporated Printed In U.S.A. Siliconix incorporated reserves , use the FET Cross Reference and FET Cross Reference and Index , Index Tips on Selecting the Right FET for your How to Choose the Correct FET for your JFET


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PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
TCA160

Abstract: BY164 Mullard C296 TAA310A TBA480 TAA700 TBA550 TAA435 TAA300 PCC88
Text: . BFW10 ~J 20m A" Replace existing pinning diagram with: _Shield /}° , c-a TO % M Jf •i ■a 0 if 2 f A F125 Germanium p-n-p alloy-diffused transistor . For , \2 ’t l ,4 -2 0 10 60 I 0/ - Germanium p-n-p alloy-diffused transistor , alloy-diffused transistor . For use as a mixer/oscillator and i.f. amplifier snieia in m.w. and l.w. a.m , Germanium p-n-p mesa transistor . For use! as a mixer/oscillator at frequencies up to| 860 MHz


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PDF AC187 BC157 BC158 BC159 BC186 BC187 BD201 BD202 BD203 BD204 TCA160 BY164 Mullard C296 TAA310A TBA480 TAA700 TBA550 TAA435 TAA300 PCC88
e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 jfet e300 bfq13 E112 jfet BFW10 JFET e420 dual jfet JFET TIS88 Siliconix FET Design Catalog Siliconix JFET catalog
Text: Section 1. Introduction Small Signal FET , Guides Tips on Selecting the Right FET for Your Application , Notes An Introduction to FETs .7-1 FET Biasing , to 2 4 0 V . 7-65 The FET Constant Current Source , .7-84 DMOS FET Analog Switches and Switch Arrays


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PDF K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 jfet e300 bfq13 E112 jfet BFW10 JFET e420 dual jfet JFET TIS88 Siliconix FET Design Catalog Siliconix JFET catalog
NPD5564

Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Text: BFS68P BFS70 BFS71 BFS72 BFS73 BFS74 BFS75 BFS76 BFS77 BFS78 BFS79 BFS80 BFT46 BFW10


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PDF IntegraU404 LSU405 LSU406 LS841 LS842 LS421 LS422 LS423 LS424 NPD5564 NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 2sd103 bup 3130 C3885A 2SA102 bfq59 34d 937 086
Text: than one transistor with different polarities in one case pnp PNP structure p-ch P channel type ( FET , television appliction CTV Chopper chop Darlington transistor Dari Dual Gate ( FET ) dg double Paired types Driver stages dr Dual transistor (differential amplifier) dual Final stages end FET Field-effect , television couleur chop Chopper Dari Transistor Darlington Dual Gate ( FET ) dg double Types couples dr Etages driver dual Transistor double (amplificateur de difference) end Etages finaux FET Transistor a effet de


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ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 TIP 43c transistor AC153Y transistor ESM 2878 2sk116 bf199 ac128
Text: structure n-ch N channel type ( FET ) n-p More than one transistor with different polarities in one case pnp , Gate ( FET ) dg double Paired types Driver stages dr Dual transistor (differential amplifier) dual end Final stages FET Field-effect transistor FET-depl. Field-effect transistor , depletion type Field-effect , Dual Gate ( FET ) dg double Types couptes dr Etages driver dual Transistor double (amplificateur de difference) end Etages finaux FET Transistor e effet de champ FET-depl. Transistor e effet de champ type


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PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 TIP 43c transistor AC153Y transistor ESM 2878 2sk116 bf199 ac128
E421 fet

Abstract: equivalent transistor e176 J2N2608 2N390G TRANSISTOR e420 dual jfet 2N4360 equivalent transistors E112 jfet J2N3821 E421 dual JFET Teledyne Semiconductor jfet
Text: field effect transistor had become a practical reality when Amelco Semiconductor devised the first , BFS68P BFS70 BFS71 BFS72 BFS73 BFS74 BFS75 BFS76 BFS77 BFS78 BFS79 BFS80 BFW10 BFW11 BFW54


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PDF O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 2N390G TRANSISTOR e420 dual jfet 2N4360 equivalent transistors E112 jfet J2N3821 E421 dual JFET Teledyne Semiconductor jfet
APY12

Abstract: BAV77 ac176 BYY32 AEY26 af124 AEY30B zener 9A2 5T acy23 ac188
Text: note on next page). A. DIODE : signal, low power B. DIODE : variable capacitance C. TRANSISTOR : low power, audio frequency D. TRANSISTOR : power, audio frequency E. DIODE : tunnel F. TRANSISTOR : low , : magnetic sensitive L. TRANSISTOR : power, high frequency N. PHOTO COUPLER P. RADIATION DETECTOR Q , . CONTROL AND SWITCHING DEVICE : (e.g. thyristor), low power S. TRANSISTOR : low power, switching T. CONTROL AND SWITCHING DEVICE : (e.g. thyristor), power U. TRANSISTOR : power, switching X. DIODE


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PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BAV77 ac176 BYY32 AEY26 af124 AEY30B zener 9A2 5T acy23 ac188
IGBT M16 100-44

Abstract: Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
Text: SEMICON INDEXES volume: i INTERNATIONAL TRANSISTOR INDEX 23nd EDITION 1997/8 ■\ 1 .5 â , transistores a effet de champ ( FET ) A - Z 4.005 1 — 4.059 _Liste des transistores unijonction , de champ ( FET ), unijonction et interrupteurs au silicium. Des volumes additionnels couvrent des , .* CAR CARTER TRANSISTOR CORP. CRT CENTRAL SEMICONDUCTOR CORPORATION CEN CENTRONIC Ltd. CET CERLED ELS CHINA SEMICONDUCTOR CORP. CSC CLAI REX ELECTRONICS CLX CLEVITE TRANSISTOR PRODUCTS* ITT COLLMER


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PDF W211d W296o W211c IGBT M16 100-44 Ericsson RBS 6102 ASEA HAFO AB GM378 Transistor B0243C Kt606 Ericsson SPO 1410 SEMICON INDEXES transistor 8BB smd tr/NEC Tokin 0d 108
cm .02m z5u 1kv

Abstract: BPW22A B2X84 la4347 pin configuration of BFW10 TDA3653 equivalent fx4054 core TRIAC TAG 9322 HEF40106BP equivalent dsq8
Text: 99 GENERAL INDUSTRIAL Control circuits for SMPS Motor drive circuits Transistor arrays Speech , silicon transistor Class A bipolar power transistors Class B bipolar power transistors Bipolar , – BFT92 ■BFT93 BFW10 BFW11 0 D D D [) [) C ) C ) D D BSV15 to 184 159 134 134


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PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 cm .02m z5u 1kv BPW22A B2X84 la4347 pin configuration of BFW10 TDA3653 equivalent fx4054 core TRIAC TAG 9322 HEF40106BP equivalent dsq8
e420 dual jfet

Abstract: MPS5010 bf320 AC digital voltmeter using 7107 cookbook for ic 555 ICL7117 VOLTMETER hall marking code A04 IH5048 e304 fet transistor SI 6822
Text: . ICL8063 Power Transistor D river/Am plifier , . 2N5115 P-Channel J FET Switch , . 10-89 J107 N-Channel J FET S w itc h , . 10-92 J 175 P-Channel J FET S w itc h


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THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 a1273 y k transistor ICA 0726 0148 Transformer AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Text: . Insulator®, Transistor , Mica . Insulators, Stand O ff. Integrated Circuits , . Mica Washers, Transistor and Diode Microswitches . Modules, Radar . M onitor. . Mounting Pads, Transistor . , Transistors. Transistor Covers. Transistor Hardware . Transistor Insulating Kits Transistor Mounting Pads . . . . Transistor Sockets


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PDF 200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 a1273 y k transistor ICA 0726 0148 Transformer AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
triac LT 5220

Abstract: bd130 BF247 by103 2N217 2n5716 2N2959 2N7923 bu208 2N3020
Text: No file text available


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PDF 041P9C RO-45 O-92/1/2/3 O-92/5 O-106 O-220 triac LT 5220 bd130 BF247 by103 2N217 2n5716 2N2959 2N7923 bu208 2N3020
1998 - HT 1000-4 power amplifier

Abstract: triac tag 8739 TRIAC TAG 8812 H48 zener diode Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris cooler fan motor winding formula OM370
Text: No file text available


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PDF 75WATT HT 1000-4 power amplifier triac tag 8739 TRIAC TAG 8812 H48 zener diode Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris cooler fan motor winding formula OM370
sx3704

Abstract: AP239 Transistor 80139 8C547 2N50B IN2222A 6C131C radio AC176 AC126 sft353 2N2064
Text: dual silicon transistor FET field effect transistor G germanium transistor GD germanium Darlington transistor J junction FET (JFET) M MOSFET ME multiple-emitter transistor M O S metal oxide semiconductor P , silicon FET TA multiple transistor U unijunction transistor 3. POL Polarity N NPN transistor or , INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE = = black violet white brown orange gn gr r ye bl = , <*NE$E USE CO 1 i ^1 T Y PE 9 10 1. TYPE Alpha-numerical transistor index 2. M /S Material


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GFB7400D

Abstract: FEY101B EF184 Rifa pmr 2026 TCA290A ORP52 ITT A2610 GZF1200 Mullard Mullard quick reference guide YD 6409
Text: Quadruple 2 -in p u t N A N D gate w ith open c o lle cto r o u tp u t transistor GFB7403D D 3403A , Sextuple s in g le -in p u t inverter gate open c o lle cto r o u tp u t transistor G FB 7405S1D D


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