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Amphenol Corporation
SLBFR315K Conn Circular F 15 POS Solder ST Cable Mount 15 Terminal 1 Port (Alt: SLBFR315K) SLBFR315K ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet SLBFR315K 0 142 Weeks, 3 Days 10 - €105.012 €92.41056 €92.41056 €92.41056 More Info
Avnet, Inc.
BFR31,215 Trans JFET N-CH 25V 10mA 3-Pin TO-236AB T/R (Alt: BFR31,215) BFR31,215 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet (2) BFR31,215 Tape and Reel 0 9 Weeks, 3 Days 3,000 - - - - €0.2826 More Info
BFR31,215 Bulk 0 1 Weeks 1,786 - - - - $0.1719 More Info
Nexperia
BFR31,215 - Bulk (Alt: BFR31,215) BFR31,215 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet BFR31,215 Bulk 0 1 Weeks 1,786 - - - - $0.17284 More Info
Avnet, Inc.
BFR31,235 Trans JFET N-CH 25V 10mA 3-Pin TO-236AB T/R (Alt: BFR31,235) BFR31,235 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet BFR31,235 Tape and Reel 0 26 Weeks, 4 Days 10,000 - - - - €0.157 More Info
NXP Semiconductors
BFR31 JFET, N CHANNEL, 25V, 0.005A, SOT-23; Breakdown Voltage Vbr:-; Zero Gate Voltage Drain Current Idss Min:1A; Zero Gate Voltage Drain Current Idss Max:5mA; Gate-Source Cutoff Voltage Vgs(off) Max:-2.5V; Transistor Type:JFET; MSL:- RoHS Compliant: Yes BFR31 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 BFR31 Cut Tape 0 5 $0.576 $0.47 $0.317 $0.212 $0.212 More Info
ComS.I.T. BFR31 1,225 - - - - - More Info
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NXP Semiconductors
BFR31,215 RF JFET, N CHANNEL, 25V, 5MA, 3-SOT-23, FULL REEL; Drain Source Voltage Vds:25V; Continuous Drain Current Id:5mA; Power Dissipation Pd:250mW; Operating Frequency Min:-; Operating Frequency Max:-; RF Transistor Case:SOT-23; MSL:- RoHS Compliant: Yes BFR31,215 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 (2) BFR31,215 Reel 0 3,000 $0.222 $0.222 $0.222 $0.222 $0.201 More Info
BFR31,215 Cut Tape 0 3,000 $0.579 $0.579 $0.372 $0.222 $0.213 More Info
Rochester Electronics BFR31,215 794 1 $0.23 $0.23 $0.21 $0.19 $0.19 More Info
Richardson RFPD BFR31,215 0 3,000 - - - - $0.18 More Info
element14 Asia-Pacific (2) BFR31,215 3,207 1 $0.784 $0.696 $0.55 $0.338 $0.3 More Info
BFR31,215 0 1 $0.784 $0.696 $0.55 $0.338 $0.3 More Info
Farnell element14 (2) BFR31,215 0 5 - £0.383 £0.299 £0.158 £0.135 More Info
BFR31,215 0 5 - £0.383 £0.299 £0.158 £0.135 More Info
NXP Semiconductors
BFR31,235 JFET, 25V, 25V, 0.005A, TO-236AB; Breakdown Voltage Vbr:25V; Zero Gate Voltage Drain Current Idss Min:1mA; Zero Gate Voltage Drain Current Idss Max:5mA; Gate-Source Cutoff Voltage Vgs(off) Max:-2.5V; Transistor Case Style:TO-236AB; RoHS Compliant: Yes BFR31,235 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 (2) BFR31,235 Cut Tape 0 5 - - - - - More Info
BFR31,235 Reel 0 10,000 $0.227 $0.227 $0.227 $0.227 $0.205 More Info
Richardson RFPD BFR31,235 0 10,000 - - - - $0.17 More Info
element14 Asia-Pacific BFR31,235 8,675 5 - $0.478 $0.333 $0.253 $0.253 More Info
Farnell element14 (2) BFR31,235 0 5 - £0.438 £0.306 £0.166 £0.152 More Info
BFR31,235 0 5 - £0.438 £0.306 £0.166 £0.152 More Info
NXP Semiconductors
BFR31,215. N-CHANNEL FET ROHS COMPLIANT: YES BFR31,215. ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 BFR31,215. Reel 0 3,000 $0.222 $0.222 $0.222 $0.222 $0.201 More Info
SMC Corporation of America
LEYG32MB-150BF-R31P1 ACTUATOR; ELEC; PROGRAMLESS LEYG32MB-150BF-R31P1 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Allied Electronics & Automation LEYG32MB-150BF-R31P1 Bulk 0 1 $1885.714 $1885.714 $1885.714 $1885.714 $1885.714 More Info
Motorola Semiconductor Products
BFR31T1 BFR31T1 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics BFR31T1 3,000 - - - - - More Info
Philips Semiconductors
BFR31215 BFR31215 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. BFR31215 5,200 - - - - - More Info
Philips Semiconductors
BFR31 INSTOCK BFR31 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Chip 1 Exchange BFR31 3,080 - - - - - More Info
Others
BFR31
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Chip 1 Exchange BFR31 3,563 - - - - - More Info

BFR31 datasheet (34)

Part ECAD Model Manufacturer Description Type PDF
BFR31 BFR31 ECAD Model NXP Semiconductors BFR31 - N-channel field-effect transistors - CRS: 1.5 pF; IDSS: 1 to 5 mA; IG: 5 mA; Kind: Low level general purpose amplifiers ; -V(P)GS: <2.5 V; VDSmax: 25 V; YFS: 1.5 to 4.5 ms Original PDF
BFR31 BFR31 ECAD Model Philips Semiconductors N-Channel Field-Effect Transistor Original PDF
BFR31 BFR31 ECAD Model Philips Semiconductors N-Channel Field-Effect Transistor Original PDF
BFR31 BFR31 ECAD Model Motorola European Master Selection Guide 1986 Scan PDF
BFR31 BFR31 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BFR31 BFR31 ECAD Model Others Shortform Electronic Component Datasheets Scan PDF
BFR31 BFR31 ECAD Model Others Basic Transistor and Cross Reference Specification Scan PDF
BFR31 BFR31 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
BFR31 BFR31 ECAD Model Others Shortform Transistor PDF Datasheet Scan PDF
BFR31 BFR31 ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF
BFR31 BFR31 ECAD Model Others Diode, Transistor, Thyristor Datasheets and more Scan PDF
BFR31 BFR31 ECAD Model Others Diode, Transistor, Thyristor Datasheets and more Scan PDF
BFR31 BFR31 ECAD Model Siliconix PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS Scan PDF
BFR31 BFR31 ECAD Model Thomson-CSF Condensed Data Book 1977 Scan PDF
BFR31 BFR31 ECAD Model Unitra Cemi Transistor Scan PDF
BFR31,215 BFR31,215 ECAD Model NXP Semiconductors N-channel field-effect transistors - CRS: 1.5 pF; I<sub>DSS</sub>: 1 to 5 mA; I<sub>G</sub>: 5 mA; Kind: Low level general purpose amplifiers ; -V(P)GS: <2.5 V; V<sub>DS</sub>max: 25 V; Y<sub>FS</sub>: 1.5 to 4.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
BFR31,215 BFR31,215 ECAD Model NXP Semiconductors BFR31 - TRANSISTOR 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC, SMD, SST3, 3 PIN, FET General Purpose Small Signal Original PDF
BFR31,235 BFR31,235 ECAD Model NXP Semiconductors N-channel field-effect transistors - CRS: 1.5 pF; I<sub>DSS</sub>: 1 to 5 mA; I<sub>G</sub>: 5 mA; Kind: Low level general purpose amplifiers ; -V(P)GS: <2.5 V; V<sub>DS</sub>max: 25 V; Y<sub>FS</sub>: 1.5 to 4.5 ms; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
BFR31,235 BFR31,235 ECAD Model NXP Semiconductors BFR31 - N-channel FET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, Large Original PDF
BFR31/C,215 BFR31/C,215 ECAD Model NXP Semiconductors BFR31/C - N-channel FET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel Original PDF

BFR31 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BFR30

Abstract: BFR31 marking M2p 21 sot23 m2p SOT23 MDA660
Text: VGS (V) BFR31. VDS= 10 V;Tj = 25 °C. Fig.5 Input characteristics. MDA659 iD (mA) 4 3 2 1 0 0 2 4 6 8 10 VDS (V) BFR31. Tj = 25 °C. Fig.6 Output characteristics; typical values. MDA660 , ; BFR31 BFR31. vDS = 10 V. Fig.8 Drain current as a function of junction temperature; typical values , Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 , gate Marking codes: BFR30: M1p. BFR31 : M2p. Fig. 1 Simplified outline and symbol. Note 1. Drain


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PDF BFR30; BFR31 BFR30: BFR30 BFR31 marking M2p 21 sot23 m2p SOT23 MDA660
Not Available

Abstract: No abstract text available
Text: _ BFR30 BFR31 JK N-CHANNEL SILICON FIELD-EFFECT , . 1.0 4.0 1.5 4.5 mS Dimensions in mm MECHANICAL DATA mW BFR31 Marking code , also Soldering recommendations. April 1991 285 BFR30 BFR31 J V RATINGS Lim iting , CHARACTERISTICS Tj = 25 °C unless otherwise specified BFR30 BFR31 max. 0.2 0.2 ' dss min , / - BFR30 BFR31 N-channel silicon field-effect transistors J V y parameters (continued


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PDF BFR30 BFR31
2010 - BFR31

Abstract: marking M2p 21 sot23
Text: ) 0 0 2 4 6 8 10 VDS (V) BFR31. VDS = 10 V; Tj = 25 C. BFR31. Tj = 25 C. Fig.5 Input , BFR30. VDS = 10 V. BFR31. VDS = 10 V. Fig.7 Drain current as a function of junction temperature , DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product , DESCRIPTION drain(1) source(1) gate 1 Top view 2 handbook, halfpage BFR30; BFR31 3 d s g MAM385 Marking codes: BFR30: M1p. BFR31 : M2p. Fig.1 Simplified outline and symbol. CAUTION This product is


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PDF BFR30; BFR31 BFR31 MAM385 BFR30: BFR31: R77/02/pp13 771-BFR30-T/R BFR30 marking M2p 21 sot23
BFR31

Abstract: BFR30 MARKING CODE 7E VF 53 TAM transistor marking code 7E SOT-23 BFR31 MARKING CODE
Text: ■bb53T31 0025137 440 HAPX N AI1ER PHILIPS/DISCRETE b?E D 7 V. BFR30 BFR31 N-CHANNEL , mA;VDS = 10 V; f = 1 kHz ±VDS max. 25 V ~vGSO max. 25 V ptot max. 250 mW BFR30 BFR31 bss , Respective Manufacturer BFR30 BFR31 ■bb53T31 002513a 3fl7 «¡APX N AMER PHILIPS/DISCRETE fc,7E T , 430 K/W BFR30 BFR31 -'gss max. 0.2 0.2 nA min. 4 1 mA 'dss max. 10 5 mA \ / min. 0.7 0 V , /DISCRETE b?E D y parameters (continued) BFR30 BFR31 Input capacitance at f = 1 MHz lD = 1 mA; VDS = 10


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PDF bb53T31 BFR30 BFR31 BFR30 OT-23. BFR31 MARKING CODE 7E VF 53 TAM transistor marking code 7E SOT-23 BFR31 MARKING CODE
2010 - Not Available

Abstract: No abstract text available
Text: ) BFR31. VDS = 10 V; Tj = 25 C. 2 4 6 8 10 VDS (V) BFR31. Tj = 25 C. Fig , BFR30. VDS = 10 V. Fig.7 50 75 100 Tj (°C) 125 BFR31. VDS = 10 V. Drain , DISCRETE SEMICONDUCTORS DAT BFR30; BFR31 N-channel field-effect transistors Product , N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction , source(1) 3 g MAM385 Marking codes: BFR30: M1p. BFR31 : M2p. DESCRIPTION 1 s 2


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PDF BFR30; BFR31 MAM385 BFR30: BFR31: R77/02/pp13
BFR31

Abstract: BFR30 2N5457 BFR30LT1 BFR31LT1 M2 MARKING SOT23 JFET 2N5457 lp "sot23 marking motorola" marking M2 JFET
Text: . DEVICE MARKING BFR30LT1 = Ml; BFR31LT1 = M2 Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc , Tstg -55 to +150 'C BFR30LT1 BFR31LT1 CASE 318-07, STYLE 10 SOT-23 (TO-236AB) 2 Source 1 Drain JFET , 0) igss — 0.2 nAdc Gate Source Cutoff Voltage (ID = 0.5 nAdc, VDs = 10 Vdc) BFR30 BFR31 VGS(off) — 5.0 2.5 Vdc Gate Source Voltage (ID = 1.0 mAdc, Vds = 10 Vdc) BFR30 BFR31 vgs -0.7 -3.0 -1.3 Vdc do = 50 /¿Adc, VDS = 10 Vdc) BFR30 BFR31 — -4.0 -2.0 ON CHARACTERISTICS Zero-Gate-Voltage Drain


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PDF BFR30LT1 BFR31LT1 BFR30LT1 BFR31LT1 OT-23 O-236AB) 2N545> BFR30 BFR31 BFR30 BFR31 2N5457 M2 MARKING SOT23 JFET 2N5457 lp "sot23 marking motorola" marking M2 JFET
Not Available

Abstract: No abstract text available
Text: VGS Value 25 25 Unit Vdc Vdc BFR30LT1 BFR31LT1 CASE 318-07, STYLE 10 SOT-23 (TO , BFR30LT1 = M l; BFR31LT1 JFET AMPLIFIERS N-CHANNEL Refer to 2N5457 for graphs. ELECTRICAL , , VDs = 10 Vdc) BFR30 BFR31 VGS BFR30 BFR31 BFR30 BFR31 - 0,7 - -3 .0 -1 .3 -4 .0 -2 .0 'GSS v GS(off , s = 10 Vdc, f = 1.0 kHz) _ - *DSS BFR30 BFR31 4.0 1.0 10 5.0 mAdc lYfsl BFR30 BFR31 BFR30 BFR31 lvoal BFR31 BFR31 Q ss - mAdc 1.0 1.5 0.5 0.75 40 20 4.0 4.5 (I q = 200 fiAdc, V


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PDF BFR30LT1 BFR31LT1 OT-23 O-236AB) BFR30LT1 BFR30 BFR31
1997 - BFR31

Abstract: BFR30
Text: VGS (V) 0 BFR31. VDS = 10 V; Tj = 25 °C. 2 4 6 8 10 VDS (V) BFR31. Tj = 25 , = 10 V. Fig.7 50 75 100 Tj (°C) 125 BFR31. VDS = 10 V. Drain current as a , DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product , Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 , Marking codes: BFR30: M1p. BFR31 : M2p. source(1) 3 MAM385 drain(1) 2 2 DESCRIPTION


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PDF BFR30; BFR31 BFR30: BFR31: MAM385 SCA56 117067/00/02/pp12 BFR31 BFR30
Not Available

Abstract: No abstract text available
Text: ■bbSB^Bl 0025137 440 APX N AUER PHI LIPS/DISCRETE b?E BFR30 BFR31 T> J V , (common source) l D = 1 mA; V DS = 10 V; f = 1 kHz Ivfsl MECHANICAL DATA mW BFR31 , – BFR30 BFR31 J bb53T31 Q0ES13fl 3A7 APX N AMER PHIL IPS /DISCRETE b?E D V R A T IN , BFR31 max. 0.2 0.2 nA ' dss min. max. 4 10 1 5 mA mA Gate-source , DD35133 213 H A P X BFR30 BFR31 N-channel silicon field-effect transistors N AUER PH ILI PS/ DIS


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PDF BFR30 BFR31 bbS3T31 Q05S143 bb53T31
2005 - Not Available

Abstract: No abstract text available
Text: 0.4 x 0.3 x 0.024 in 99.5% alumina. = 1 or 2 = Date Code BFR31LT1 BFR31LT1G †For , BFR30LT1, BFR31LT1 JFET Amplifiers N−Channel Features • Pb−Free Package is Available , , BFR31LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min , Source Cutoff Voltage (ID = 0.5 nAdc, VDS = 10 Vdc) BFR30 BFR31 VGS(OFF) − − 5.0 2.5 Vdc Gate Source Voltage (ID = 1.0 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31


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PDF BFR30LT1, BFR31LT1 BFR30LT1/D
BFR31

Abstract: BFR30LT1
Text: BFR31LT1 I 2 SOURCE 1 DRAIN 2 CASE 3 1 8 -0 8 , STYLE 10 S O T -2 3 (TO -236A B ) MAXIMUM , +150 °c/w °c T j- Tgtg DEVICE MARKING BFR30LT1 = M1; BFR31LT1 = M2 ELECTRICAL , BFR30 BFR31 BFR30 BFR31 BFR30 BFR31 v GS(OFF) - 0.2 5.0 2.5 nAdc Vdc = 0.5 nAdc, V q 3 = 10 , . 4 -1 3 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data BFR30LT1 BFR31LT1 , Unit ON CHARACTERISTICS Zero-G ate-Voltage Drain Current (V q s = 10 Vdc, ^GS = 0) BFR30 BFR31 'd s


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PDF BFR30LT1 BFR31LT1 -236A BFR31
2010 - BFR30

Abstract: BFR31 MDA669 MDA670
Text: -0.8 1 1 -1 -1.2 min -4 -3 -2 -1 0 0 0 VGS (V) BFR31. 4 6 8 10 VDS (V) BFR31. VDS = 10 V; Tj = 25 C. 2 Tj = 25 C. Fig.5 Input characteristics , (°C) 125 25 BFR30. VDS = 10 V. Fig.7 50 75 100 Tj (°C) 125 BFR31. VDS , DISCRETE SEMICONDUCTORS DATA SHEET BFR30; BFR31 N-channel field-effect transistors Product , N-channel field-effect transistors BFR30; BFR31 DESCRIPTION Planar epitaxial symmetrical junction


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PDF BFR30; BFR31 MAM385 BFR30: BFR31: R77/02/pp13 BFR30 BFR31 MDA669 MDA670
Not Available

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFE T A m p lifie rs BFR30LT1 BFR31LT1 N-Channel , BFR30LT1 = M1; BFR31LT1 = M2 ELECTRICAL CHARACTERISTICS (T/v = 25°C unless otherwise noted , = 10 Vdc) (Id = 50 nAdc, V D S = 1o Vdc) 'GSS BFR30 BFR31 VGS(OFF) BFR30 BFR31 BFR30 BFR31 vgs — - 0 .7 — — _ 1. Device mounted on FR4 glass epoxy printed circuit board , Device Data BFR30LT1 BFR31LT1 ELECTRICAL CHARACTERISTICS O a = 25°C unless otherwise noted


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PDF BFR30LT1 BFR31LT1 -236A 3b725S
BFR30

Abstract: BFR31
Text: Value 25 25 Unit Vdc Vdc BFR30LT1 BFR31LT1 CASE 318-07, STYLE 10 SOT-23 (TO-236AB) THERM AL , in. 99.5% alum ina. JFET AMPLIFIERS N-CHANNEL DEVICE M AR KIN G BFR30LT1 = M1 ; BFR31LT1 = M2 , q s = 10 Vdc) Gate Source Voltage |l[) = 1.0 m Adc, V d s ~ 10 Vdc) BFR30 BFR31 VGS BFR30 BFR31 BFR30 BFR31 - 0 .7 - - Characteristic j Symbol ( Min ( Max ( Unit , Vdc, V q s = 01 BFR30 BFR31 >DSS 4.0 1.0 10 5.0 SM ALL-SIGNAL CHARACTERISTICS Forward


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PDF BFR30LT1 BFR31LT1 OT-23 O-236AB) BFR30 BFR31
2004 - bfr31

Abstract: No abstract text available
Text: 417 mW mW/°C °C/W °C ORDERING INFORMATION Device BFR30LT1 BFR30LT1G BFR31LT1 Package SOT-23 SOT , BFR31 BFR30 BFR31 BFR30 BFR31 yfs mAdc 1.0 1.5 0.5 0.75 40 20 - - - - 4.0 4.5 - - 25 15 5.0 4.0 1.5 1.5 mAdc (VDS = 10 Vdc, VGS = 0) BFR30 BFR31 IDSS 4.0 1.0 10 5.0 mAdc BFR30 BFR31 BFR30 BFR31 BFR30 BFR31


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PDF BFR30LT1, BRF31LT1 bfr31
2001 - Not Available

Abstract: No abstract text available
Text: ON Semiconductort JFET Amplifiers N­Channel 2 SOURCE 3 GATE BFR30LT1 BFR31LT1 3 1 1 , Ambient Junction and Storage Temperature DEVICE MARKING BFR30LT1 = M1; BFR31LT1 = M2 ELECTRICAL , nAdc, VDS = 10 Vdc) (ID = 1.0 mAdc, VDS = 10 Vdc) (ID = 50 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31 BFR30 BFR31 IGSS VGS(OFF) VGS - - - ­0.7 - - - 0.2 5.0 2.5 ­3.0 ­1.3 ­4.0 ­2.0 nAdc Vdc Vdc 1 , , 2001 ­ Rev. 1 Publication Order Number: BFR30LT1/D BFR30LT1 BFR31LT1 ELECTRICAL CHARACTERISTICS


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PDF BFR30LT1 BFR31LT1 236AB) BFR30LT1
1996 - BFR30LT1

Abstract: BFR31 BFR30 BFR31LT1
Text: BFR30LT1 BFR31LT1 N­Channel 2 SOURCE 3 3 GATE 1 2 1 DRAIN CASE 318 ­ 08, STYLE 10 SOT , Storage Temperature DEVICE MARKING BFR30LT1 = M1; BFR31LT1 = M2 ELECTRICAL CHARACTERISTICS (TA = 25 , (ID = 0.5 nAdc, VDS = 10 Vdc) BFR30 BFR31 VGS(OFF) - - 5.0 2.5 Vdc Gate Source Voltage (ID = 1.0 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31 VGS ­ 0.7 - - - ­ , , Small­Signal Transistors, FETs and Diodes Device Data 1 BFR30LT1 BFR31LT1 ELECTRICAL CHARACTERISTICS


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PDF BFR30LT1/D BFR30LT1 BFR31LT1 236AB) BFR30LT1 BFR31 BFR30 BFR31LT1
2001 - BFR30

Abstract: BFR30LT1 BFR31 BFR31LT1
Text: ON Semiconductort BFR30LT1 BFR31LT1 JFET Amplifiers N­Channel 2 SOURCE 3 3 GATE 1 , Junction to Ambient Junction and Storage Temperature DEVICE MARKING BFR30LT1 = M1; BFR31LT1 = M2 , ) Gate Source Cutoff Voltage (ID = 0.5 nAdc, VDS = 10 Vdc) BFR30 BFR31 VGS(OFF) - - 5.0 2.5 Vdc Gate Source Voltage (ID = 1.0 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31 , . 1 1 Publication Order Number: BFR30LT1/D BFR30LT1 BFR31LT1 ELECTRICAL CHARACTERISTICS


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PDF BFR30LT1 BFR31LT1 236AB) r14525 BFR30LT1/D BFR30 BFR30LT1 BFR31 BFR31LT1
2004 - BFR30

Abstract: BFR30LT1 BFR30LT1G BFR31 BFR31LT1 BRF31LT1
Text: BFR31LT1 For information on tape and reel specifications, including part orientation and tape sizes , 0.2 nAdc Gate Source Cutoff Voltage (ID = 0.5 nAdc, VDS = 10 Vdc) BFR30 BFR31 VGS(OFF) - - 5.0 2.5 Vdc Gate Source Voltage (ID = 1.0 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31 VGS -0.7 - - - -3.0 -1.3 -4.0 -2.0 Vdc BFR30 BFR31 IDSS 4.0 , , VDS = 10 Vdc, f = 1.0 kHz) BFR30 BFR31 BFR30 BFR31 (ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 kHz


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PDF BFR30LT1, BRF31LT1 BD675/D BFR30 BFR30LT1 BFR30LT1G BFR31 BFR31LT1 BRF31LT1
2005 - BFR30

Abstract: BFR30LT1 BFR30LT1G BFR31 BFR31LT1 BFR31LT1G
Text: . Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. = 1 or 2 = Date Code BFR31LT1 BFR31LT1G For , BFR30LT1, BFR31LT1 JFET Amplifiers N-Channel Features · Pb-Free Package is Available http , , BFR31LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min , Source Cutoff Voltage (ID = 0.5 nAdc, VDS = 10 Vdc) BFR30 BFR31 VGS(OFF) - - 5.0 2.5 Vdc Gate Source Voltage (ID = 1.0 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31 VGS


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PDF BFR30LT1, BFR31LT1 BFR30LT1/D BFR30 BFR30LT1 BFR30LT1G BFR31 BFR31LT1 BFR31LT1G
BFR30LT1

Abstract: BFR30 BFR31 BFR31LT1
Text: BFR30LT1 BFR31LT1 N­Channel 2 SOURCE 3 3 GATE 1 2 1 DRAIN CASE 318 ­ 08, STYLE 10 SOT , Storage Temperature DEVICE MARKING BFR30LT1 = M1; BFR31LT1 = M2 ELECTRICAL CHARACTERISTICS (TA = 25 , (ID = 0.5 nAdc, VDS = 10 Vdc) BFR30 BFR31 VGS(OFF) - - 5.0 2.5 Vdc Gate Source Voltage (ID = 1.0 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31 VGS ­ 0.7 - - - ­ , © Motorola, Small­Signal Transistors, FETs and Diodes Device Data 1 BFR30LT1 BFR31LT1 ELECTRICAL


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PDF BFR30LT1/D BFR30LT1 BFR31LT1 236AB) BFR30LT1/D* BFR30LT1 BFR30 BFR31 BFR31LT1
2001 - BFR30

Abstract: BFR30LT1 BFR31 BFR31LT1
Text: ON Semiconductort BFR30LT1 BFR31LT1 JFET Amplifiers N­Channel 2 SOURCE 3 3 GATE 1 , Junction to Ambient Junction and Storage Temperature DEVICE MARKING BFR30LT1 = M1; BFR31LT1 = M2 , ) Gate Source Cutoff Voltage (ID = 0.5 nAdc, VDS = 10 Vdc) BFR30 BFR31 VGS(OFF) - - 5.0 2.5 Vdc Gate Source Voltage (ID = 1.0 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31 , Rev. 2 1 Publication Order Number: BFR30LT1/D BFR30LT1 BFR31LT1 ELECTRICAL CHARACTERISTICS


Original
PDF BFR30LT1 BFR31LT1 236AB) r14525 BFR30LT1/D BFR30 BFR30LT1 BFR31 BFR31LT1
SMD CODE MARKING s7 SOT23

Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
Text: -23 SOT-23 SOT-23 20 20 20 20 25 — — - - 25 - BFR31 BFT46 PMBFJ108 , S9 MA M90 M91 M92 MG MW MK BFR31 BFR101A BFR101B BFT46 BSD20 BSD22 BSP103 BSP105


OCR Scan
PDF applicat174 PMBFJ175 PMBFJ176 PMBFJ177 OT-23 OT-89 OT-143 OT-223 OT-23 SMD CODE MARKING s7 SOT23 PMBFJ111 PMBFJ174 BSR56 BFT46
7.1 Channel audio amplifier

Abstract: amplifier audio BFT46 J310 Application Note transistors BFW10 BF512 BF410C BFW12 n channel audio
Text: amplifier _ BF247A BF247B BF247C _ - _ BFT46 BFR31 BFR30 - _ - _- _ -


OCR Scan
PDF BFW13 BFW12 BFW11 BFW10 BF245A BF245B BF245C BF256A BF256B BF545A 7.1 Channel audio amplifier amplifier audio BFT46 J310 Application Note transistors BFW10 BF512 BF410C n channel audio
1998 - BSS83 M74

Abstract: bf992 m92 bf998 Mop marking M29 M74 marking transistor M3P BF909RM29 marking nb BF511 BSS83
Text: PMBFJ176 p6S BF904WR MC BFR30 M1p PMBFJ177 p6Y BF908 M26 BFR31 M2p


Original
PDF OT143 OT343 BF510 BF991 PMBF4391 BF511 BF992 PMBF4392 BF512 BF992R BSS83 M74 bf992 m92 bf998 Mop marking M29 M74 marking transistor M3P BF909RM29 marking nb BF511 BSS83
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