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Part Manufacturer Description Datasheet Download Buy Part
BFR181WH6327XTSA1 Infineon Technologies AG RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Search Stock (11)

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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BFR 181W H6327 Infineon Technologies AG Avnet - -
BFR181W H6327 Infineon Technologies AG Rutronik 12,000 $0.05 $0.05
BFR181WE-6327 Infineon Technologies AG Bristol Electronics - -
BFR181WE6327 Infineon Technologies AG Rochester Electronics 31,570 $0.13 $0.10
BFR181WE6327 Siemens Chip One Exchange - -
BFR181WH6327XT Infineon Technologies AG Avnet 0 $0.04 $0.04
BFR181WH6327XTSA1 Infineon Technologies AG Newark element14 4,198 $0.33 $0.07
BFR181WH6327XTSA1 Infineon Technologies AG Farnell element14 4,228 £0.25 £0.08
BFR181WH6327XTSA1 Infineon Technologies AG Chip1Stop 2,470 $0.14 $0.05
BFR181WH6327XTSA1 Infineon Technologies AG element14 Asia-Pacific 4,298 $0.48 $0.10
BFR181WH6327XTSA1 Infineon Technologies AG RS Components 2,200 £0.07 £0.04

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BFR181W datasheet (7)

Part Manufacturer Description Type PDF
BFR181W Infineon Technologies NPN Silicon RF Transistor Original PDF
BFR181W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
BFR181W Siemens NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) Original PDF
BFR181W Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BFR181WE6327 Infineon Technologies TRANS GP BJT NPN 12V 0.02A 3SOT-323 T/R Original PDF
BFR181WE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN RF 12V SOT-323 Original PDF
BFR181WH6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANS RF NPN 12V 20MA SOT323 Original PDF

BFR181W Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - BFR181W

Abstract:
Text: BFR181W NPN Silicon RF Transistor* · For low noise, high-gain broadband amplifiers at collector , ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR181W Marking , 2005-10-12 BFR181W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol , 2005-10-12 BFR181W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values , | (k-(k²-1) ), 3 2005-10-12 BFR181W SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6


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PDF BFR181W OT323 BFR181W BCW66
2007 - BCW66

Abstract:
Text: BFR181W NPN Silicon RF Transistor* · For low noise, high-gain broadband amplifiers at collector , discharge) sensitive device, observe handling precaution! Type BFR181W Marking RFs 1=B Pin , Application Note Thermal Resistance 1 2007-03-30 BFR181W Electrical Characteristics at TA = 25 , , VCE = 8 V, pulse measured 2 2007-03-30 BFR181W Electrical Characteristics at TA = 25 , 21 / S 12| 1/2 ma = |S 21e / S12e| (k-(k²-1) ) 2G 3 2007-03-30 BFR181W SPICE


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PDF BFR181W OT323 BCW66 BFR181W BFR181W foot print SOT23 NE
2009 - Not Available

Abstract:
Text: BFR181W Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers , ) sensitive device, observe handling precaution! Type BFR181W Marking RFs Pin Configuration 1 , AN077 (Thermal Resistance Calculation) 1 2014-04-07 BFR181W Electrical Characteristics at T A , IC = 5 mA, VCE = 8 V, pulse measured 2 2014-04-07 BFR181W Electrical Characteristics at TA , 2014-04-07 BFR181W Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp) 10


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PDF BFR181W AEC-Q101 OT323
2001 - 10V125V

Abstract:
Text: BFR181W NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at , BFR181W RFs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings Parameter , calculation of R please refer to Application Note Thermal Resistance thJA 1 Jun-27-2001 BFR181W , gain - IC = 5 mA, VCE = 8 V 2 Jun-27-2001 BFR181W Electrical Characteristics at TA = , Jun-27-2001 BFR181W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax


Original
PDF BFR181W VSO05561 OT323 900MHz Jun-27-2001 10V125V BFR181W VSO05561
2009 - Not Available

Abstract:
Text: BFR181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector , (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR181W Marking RFs Pin , please refer to Application Note AN077 Thermal Resistance 1 2010-10-08 BFR181W Electrical , gain - IC = 5 mA, VCE = 8 V, pulse measured 2 2010-10-08 BFR181W Electrical , / S12e | (k-(k²-1) ) 2G 3 2010-10-08 BFR181W Total power dissipation P tot = ƒ(TS


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PDF BFR181W OT323
2004 - Not Available

Abstract:
Text: BFR181W NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at 3 , : Electrostatic discharge sensitive device, observe handling precaution! Type BFR181W Maximum Ratings , Thermal Resistance thJA 1 Jun-27-2001 BFR181W Electrical Characteristics at TA = 25 , -27-2001 BFR181W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter , Jun-27-2001 BFR181W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax


Original
PDF BFR181W VSO05561 OT323
2005 - Not Available

Abstract:
Text: BFR181W NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at 3 , : Electrostatic discharge sensitive device, observe handling precaution! Type BFR181W Maximum Ratings , Thermal Resistance thJA 1 Jun-27-2001 BFR181W Electrical Characteristics at TA = 25 , -27-2001 BFR181W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter , Jun-27-2001 BFR181W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax


Original
PDF BFR181W VSO05561 OT323
2009 - Not Available

Abstract:
Text: BFR181W Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers , ) sensitive device, observe handling precaution! Type BFR181W Marking RFs Pin Configuration 1 , Calculation) 1 2013-06-18 BFR181W Electrical Characteristics at T A = 25 °C, unless otherwise , 2 2013-06-18 BFR181W Electrical Characteristics at TA = 25 °C, unless otherwise specified , MHz 1G ms 2G ma = |S 21 / S12 | = |S21e / S12e| (k-(k²-1) 1/2) 3 2013-06-18 BFR181W


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PDF BFR181W AEC-Q101 OT323
2009 - AN077

Abstract:
Text: BFR181W NPN Silicon RF Transistor · For low noise, high-gain broadband amplifiers at collector , discharge) sensitive device, observe handling precaution! Type BFR181W Marking RFs Pin , refer to Application Note AN077 Thermal Resistance 1 2010-10-08 BFR181W Electrical , gain - IC = 5 mA, VCE = 8 V, pulse measured 2 2010-10-08 BFR181W Electrical , BFR181W Total power dissipation P tot = (TS) Permissible Pulse Load RthJS = (tp) 10 3 200 mW


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PDF BFR181W OT323 AN077 BCR108W BFR181W
BF777W

Abstract:
Text: BFR92P BFR92W BFR93A BFR93P BFR93W BFR106 BFR180 BFR180W BFR181 BFR181W BFR182 BFR182W BFR183 BFR183W


OCR Scan
PDF 6SOT323 OT323 BF777W BFR93W BFQ69 BFW92 sot23 BFP183 BFE193 BFS480 BF606A BFG235 TAG740-200.800
2011 - BGT24MTR11

Abstract:
Text: BFP182W BFP183 BFP183W BFP193 BFP193W BFP196 BFP196W BFQ19S BFR106 BFR181 BFR181W BFR182 BFR182W BFR183


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PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BGA628L7 BAR86-02LRH 24GHz Radar marking code onsemi Diode ALPHA&OMEGA DATE CODE SMV1705 BFR181W 2SC4586
2010 - XM0830SJ

Abstract:
Text: BFR181W BFR182 BFR182W BFR183 BFR183W BFR193 BFR193W BFR340F BFR35AP BFR360F BFR380F BFR92P


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PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor XM0860SH sot-363 inf smd marking D3 SOT363 BFP410
2009 - 2sc3052ef

Abstract:
Text: BFQ19S BFR106 BFR181 BFR181W BFR182 BFR182W BFR183 BFR183W BFR193 BFR193W BFR340F BFR35AP


Original
PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 1N4148 SOD323 TRANSISTOR S1A 64 smd toshiba smd marking code transistor semiconductor cross reference
1968 - 2SK508

Abstract:
Text: No file text available


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PDF BB202 BGA6589 com/catalog/219/282/27046/index 31-24-3536195ronald 2SK508 TEA5767 IRF power mosfets catalog 2SK147BL 2SK163 Funkamateur bfr53 2SK43 2SK162-K 2SK163-L
2005 - nec d882

Abstract:
Text: No file text available


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PDF
2005 - BFQ93A

Abstract:
Text: No file text available


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PDF
1996 - CGD923

Abstract:
Text: No file text available


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PDF solutions/multimarket/transistors/25 CGD923 2SK163 BFG480W BFG591 amplifier bf998 3SK290 BF1009SW BAP55 BAP50 2N5653
2005 - BB142

Abstract:
Text: No file text available


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PDF TZA30x6 BB142 2SK163 BF245c SMD bap50 spice BF1109 spice 2SK508 BB143 BB184LX BF245A spice BF245c spice
2005 - 2SK163-L

Abstract:
Text: No file text available


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PDF
MRF947T1 equivalent

Abstract:
Text: NPN Silicon Amplifier and Oscillator Transistor (See-A part # for Pb-free) BFR181W NE68030 Closest


Original
PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G HPMA-2086 fujitsu gaas fet fhx76lp MMBR521L
2004 - 2SK170BL

Abstract:
Text: No file text available


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PDF BF1107/8 BGA2715-17 BGA6x89 2SK170BL 2SK508 tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi toshiba 2sk170bl 2sk170y BF1009SW for BB132 varicap
2000 - 2SK170BL

Abstract:
Text: No file text available


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diode S6 78A

Abstract:
Text: 15 1.5 2 2 2 BFR181W N Ä 2 BFR 182 N 1 BFR182W BFR 183 12 N 12 250 8.00 1.2 # É f í 8.00 1.2


OCR Scan
PDF O-92tl O-92d diode S6 78A transistor 6bw TRANSISTOR PNP BA RT SOT 89 32N45 mmic CEA SOT363 6bw 12 transistor 6bw sot-23 BF1012S up 6103 s8 TRANSISTOR BC 545
UAA 1006

Abstract:
Text: No file text available


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PDF BFU725F UAA 1006 UXA23465 UXA23476 UAF3000 UXA23466 "BAT17" UAF4000 BFG480W TEF6860HL 2SK163
2006 - RF8109

Abstract:
Text: No file text available


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