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BFP505 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
BFP505 BFP505 ECAD Model Philips Semiconductors NPN 9 GHz Wideband Transistor Original PDF

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SOT173

Abstract: SOT-173 wideband transistor sot173 BFP505 NPN planar RF transistor 5 GHZ TRANSISTOR
Text: Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor BFP505 philips international FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • Tape and reel packing for surface mounting (SOT173X). DESCRIPTION The BFP505 is an NPN silicon planar epitaxial transistor, Intended for low current RF wideband applications up to 3 GHz. The transistor is mounted in a hermetically sealed


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PDF BFP505 OT173X) BFP505 OT173 OT173X 004S3Ã OT173. OT173X. SOT173 SOT-173 wideband transistor sot173 NPN planar RF transistor 5 GHZ TRANSISTOR
sot173x

Abstract: BFP505
Text: Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES · High power gain · Low noise figure · High transition frequency · Gold metallization ensures excellent reliability · Tape and reel packing for surface mounting (SOT173X). DESCRIPTION PINNING PIN 1 2 3 4 DESCRIPTION collector "^" 3 SbE D ¡"^7 BFP505 711DflSb QDMS3flS AS? P H I N O' emitter base (indicated by a red dot on body) emitter Top view The BFP505 is an NPN


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PDF OT173X) BFP505 711DflSb BFP505 OT173 OT173X MBC360 sot173x
SOT173

Abstract: BFP505 SOT-173
Text: Philips Semiconductors bbsa^ai DdBmiB ESI MARX Preliminary specification NPN 9 GHz wideband transistor BFP505 N AF1ER PHILIPS/DISCRETE LIE D FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • Tape and reel packing for surface mounting (SOT173X). DESCRIPTION The BFP505 is an NPN silicon planar epitaxial transistor, intend» for low current RF wideband applications up to 3 GHz. The transistor is mounted in a


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PDF BFP505 OT173X) BFP505 OT173 OT173X OT173ctor-base SOT173 SOT-173
SOT173 RF transistor

Abstract: No abstract text available
Text: Philips Semiconductors btiSB'lBl 0 0 31 4 ^ 3 S S I M A P X Preliminary specification NPN 9 GHz wideband transistor BFP505 N AMER P H ILIP S /D IS C R E TE FEATURES b'lE D PINNING • High power gain PIN • Low noise figure 1 collector • High transition frequency 2 emitter • Gold metallization ensures excellent reliability 3 base , emitter DESCRIPTION DESCRIPTION The BFP505 is an NPN silicon planar epitaxial transistor, intended


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PDF BFP505 OT173X) BFP505 OT173 SOT173 RF transistor
SOT173

Abstract: BFG505 BFP505 BFR505 X3A-BFR505 crystal PHILIPS
Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal PHILIPS INTERNATIONAL SbE DESCRIPTION NPN crystal used in BFR505 (SOT23), BFG505 (SOT143) and BFP505 (SOT173). Crystals are supplied as whole wafer, fully tested but unsawn. ELEMENT LAYOUT Active area: 10 jim around metallization pattern. Fig.1 X3A-BFR505 crystal. T3h9o X3A-BFR505 » m 7110821, 0D4blD5 3E1 HPHIN MECHANICAL DATA Crystal Top metallization Au 1.15 jam Back metallization AuAs 0.35 nm Passivation Si3N4 0.5


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PDF BFR505 BFG505 OT143) BFP505 OT173) X3A-BFR505 X3A-BFR505 RV-3-5-52/733 SOT173 BFG505 BFP505 BFR505 crystal PHILIPS
Not Available

Abstract: No abstract text available
Text: bb-53^31 DD3EE15 T^7 Hi APX Philips Sem iconductors Product specification NPN 9 GHz wideband transistor X3A-BFR505 crystal N A PIER PHILIPS/DISCRETE b^E » DESCRIPTION MECHANICAL DATA NPN crystal used in BFR505 (SOT23), BFG505 (SOT143) and BFP505 (SOT173). Crystals are supplied as whole wafer, fully tested but unsawn. Crystal Top metallization Back metallization AuAs 0.35 pm Passivation ELEMENT LAYOUT Au 1.15 pm Si3N„ 0.5 pm Base bond pad 1 dia. 55 pm Emitter bond


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PDF bb-53 DD3EE15 X3A-BFR505 BFR505 BFG505 OT143) BFP505 OT173)
SOT173

Abstract: BFG505 BFP505 BFR505 X3A-BFR505
Text: Philips Semiconductors bb53T31 DD3SS1S 117 IAPX Product specification X3A-BFR505 NPN 9 GHz wideband transistor crystal ——N AMER PHILIPS/DISCRETE hlE ]> DESCRIPTION NPN crystal used in BFR505 (SOT23), BFG505 (SOT143) and BFP505 (SOT173). Crystals are supplied as whole wafer, fully tested but unsawn. ELEMENT LAYOUT MECHANICAL DATA active area / / o t n Active area: 10 urn around metallization pattern. Fig.1 X3A-BFR505 crystal. Crystal Top metallization Au 1.15 |im


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PDF bb53T31 X3A-BFR505 BFR505 BFG505 OT143) BFP505 OT173) X3A-BFR505 URV-3-5-52/733 SOT173 BFG505 BFP505 BFR505
SOT-173

Abstract: sot173 BFP96 BFQ32C
Text: 55 RF/Microwave Devices RF W ideband Transistors (cont.) V c* Curve No. (15) (21) (21) (21) (22) (22) (22) (23) (23) (23) (23) (24) (24) (24) (24) (25) (26) (7) (8) (10) (21) (22) (23) (3) (11) (10) (8) (9) (9) (9) (10) (10) (10) (10) (17) (11) (11) (7) (7) (7) Type No. BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505 BFP520 BFP540 BFQ17 BFQ18A BFQ19 BFQ22S BFQ23 BFQ23C


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PDF BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR SOT-173 sot173 BFP96 BFQ32C
fr91a

Abstract: t122 25 3 FQ235a philips bfq FQ262a fr90a t122 25 10 122e BFR134 t122 25 72
Text: 22 Small Signal Leaded Devices Wideband Transistors (cont.) h FE R a tin g s v CEO V v CBO V c mA m in ./m a x . a t 'C / V CE m A /V NF ty p . a t lc dB mA fT ty p . GHz c re ty p . pF Type N P N (c o n t.) B FG 91A BFG96 BFG 134 B FG 195 BFP 90A BFP 91A BFP96 BFP505 BFP520 BFP540 BFQ 22S BFQ33C B FQ 34 B FQ 34T B FQ 53 BFQ63 BFQ65 BFQ66 B FQ 68 B FQ 135 B FQ 136 BFQ161 B FQ 162 B FQ 163 BFQ231 B FQ 231A BFQ232 B FQ 232A BFQ 233 B FQ 233A BFQ 234 BFQ 235 B FQ 235A BFQ 262 B FQ 262A BFQ 263 B


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PDF BFG96 BFP96 BFP505 BFP520 BFP540 BFQ33C BFQ63 BFQ65 BFQ66 BFQ161 fr91a t122 25 3 FQ235a philips bfq FQ262a fr90a t122 25 10 122e BFR134 t122 25 72
BFT93A

Abstract: BFT92A BFG134 bf689 sot37 sot173 BFG34 BFQ52 XR SOT philips bfw92
Text: -172 SOT-173 BFP505 BFP520 BFP540 SOT-23 BFT25A BFR505 BFR520 BFR540 surface mount SOT-143* BFG25A/X BFG505


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PDF BFY90 TQ-92 BF689K BF763 SOt-37 BFT24 BFW92 BFW93 OT-122E OT-23 BFT93A BFT92A BFG134 bf689 sot37 sot173 BFG34 BFQ52 XR SOT philips bfw92
BFG591 amplifier

Abstract: SC08a bfr591 sot173x BB544 BFR91 philips SIEMENS BFP520 philips bfw92 bfg65 sot143 sot172
Text: development. BFS25A BFS505 BFS520 BFP505 (note 1) BFR505 BFG505 BFG505/X BFG505/XR BFP520 (note 1) BFR520


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PDF OT122 OT143 OT223 OT323 BFS17W BFG17A BFG16A BF547W BF747W BFT25 BFG591 amplifier SC08a bfr591 sot173x BB544 BFR91 philips SIEMENS BFP520 philips bfw92 bfg65 sot143 sot172
bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: BFG540 BFG540X BFG540XR BFG541 BFG590 BFG590X BFG590XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505


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PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
BF547A

Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Text: SOT173/X SOT323 SOT23 SOT143 BFS25A BFT25A BFG25A/X BFP505 (note 1) BFS505


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PDF LCD01 BF547A transistor bf 175 BFG65 equivalent BF547B BFG25AXD
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