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NXP Semiconductors
BFG591 Bipolar - RF Transistor, NPN, 15 V, 7 GHz, 2 W, 200 mA, 90 RoHS Compliant: Yes BFG591 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 BFG591 Cut Tape 0 1 - - - - - More Info
element14 Asia-Pacific (2) BFG591 0 5 - $1.3 $0.721 $0.721 $0.721 More Info
BFG591 0 5 - $1.3 $0.721 $0.721 $0.721 More Info
NXP Semiconductors
BFG591,115 RF WIDEBAND TRANSISTOR, NPN, 15V, 7GHZ, 3-SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:15V; Transition Frequency ft:7GHz; Power Dissipation Pd:2W; DC Collector Current:200mA; DC Current Gain hFE:90hFE; MSL:- RoHS Compliant: Yes BFG591,115 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 (2) BFG591,115 Cut Tape 0 1,000 $1.36 $1.17 $0.8 $0.615 $0.615 More Info
BFG591,115 Reel 0 1,000 $0.622 $0.622 $0.622 $0.622 $0.543 More Info
Chip1Stop BFG591,115 Bulk 1 5 - $0.412 $0.412 $0.412 $0.412 More Info
NXP Semiconductors
BFG591. BFG591. ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
element14 Asia-Pacific BFG591. 0 1 $1.93 $1.93 $1.27 $1.08 $1.08 More Info

BFG591 datasheet (9)

Part ECAD Model Manufacturer Description Type PDF
BFG591 BFG591 ECAD Model NXP Semiconductors BFG591 - NPN 7 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; fT: 7 GHz; GUM @ f1: 13 dB; GUM @ f2: 7.5 dB; IC: 200 mA; Ptot: 2000 mW; Polarity: NPN ; VCEO max: 15 V Original PDF
BFG591 BFG591 ECAD Model Philips Semiconductors NPN 7 GHz wideband transistor Original PDF
BFG591 BFG591 ECAD Model Philips Semiconductors NPN 8 GHz Wideband Transistor Original PDF
BFG591 BFG591 ECAD Model Philips Semiconductors NPN 7 GHz wideband transistor Scan PDF
BFG591,115 BFG591,115 ECAD Model NXP Semiconductors BFG59 - TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP RF Small Signal Original PDF
BFG591,115 BFG591,115 ECAD Model NXP Semiconductors NPN 7 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; f<sub>T</sub>: 7 GHz; G<sub>UM</sub> @ f1: 13 dB; G<sub>UM</sub> @ f2: 7.5 dB; I<sub>C</sub>: 200 mA; P<sub>tot</sub>: 2000 mW; Polarity: NPN ; VCEO max: 15 V; Package: SOT223 (SC-73); Container: Tape reel smd Original PDF
BFG591T/R BFG591T/R ECAD Model NXP Semiconductors TRANS GP BJT NPN 15V 0.2A 4 Original PDF
BFG591TR BFG591TR ECAD Model Philips Semiconductors NPN 7 GHz wideband transistor Original PDF
BFG591T/R BFG591T/R ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

BFG591 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1995 - BFG591 Application Notes

Abstract: BFG591 amplifier BFG591 MJE 340 transistor MGC801 MBC964 DIN45004B transistor fp 1016
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product , Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES , pF Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 , transistor BFG591 CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER , BFG591 MGC791 3.0 Ptot (W) 2.5 MRA749 250 handbook, halfpage h FE 200 2.0 150


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PDF BFG591 OT223 BFG591 Application Notes BFG591 amplifier BFG591 MJE 340 transistor MGC801 MBC964 DIN45004B transistor fp 1016
BFG591

Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEA , specification NPN 7 GHz wideband transistor BFG591 LIM ITIN G VALU ES In accordance with the Absolute , BFG591 C H A R A C T E R IS T IC S Tj = 25 °C (unless otherwise specified). SYM BOL PAR AM ETER , BFG591 MRA749 250 hFE 200 150 100 50 lb '2 10~1 1 10 lc (mA) 102 , Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 MGC79S MGC794 10


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PDF BFG591 voltage929 7110A2b BFG591
1995 - BFG591 Application Notes

Abstract: BFG591 amplifier BFG591 npn transistor high current DIN45004B transistor fp 1016 MGC801
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product , Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES , 2 Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 , transistor BFG591 CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL PARAMETER , BFG591 MGC791 3.0 Ptot (W) 2.5 MRA749 250 handbook, halfpage hFE 200 2.0 150


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PDF BFG591 OT223 BFG591 Application Notes BFG591 amplifier BFG591 npn transistor high current DIN45004B transistor fp 1016 MGC801
BFG591 amplifier

Abstract: BFG591 equivalent of SL 100 NPN Transistor transistor fp 1016 2T3 transistor BFG591 Application Notes sl 100 Transistor Equivalent list SL 100 NPN Transistor NPN power transistor spice DIN45004B
Text: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 FEATURES , NPN 7 GHz wideband transistor BFG591 LIMITING VALUES In accordance with the Absolute Maximum Rating , GHz wideband transistor CHARACTERISTICS Tj = 25 °C (unless otherwise specified). BFG591 SYMBOL , specification NPN 7 GHz wideband transistor BFG591 3.0 Hot (W) 2.5 2.0 1.5 1.0 0.5 50 MGC791 100 150 , Manufacturer Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 25 gain


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PDF BFG591 OT223 MSB002 OT223. 711005b BFG591 amplifier BFG591 equivalent of SL 100 NPN Transistor transistor fp 1016 2T3 transistor BFG591 Application Notes sl 100 Transistor Equivalent list SL 100 NPN Transistor NPN power transistor spice DIN45004B
2010 - BFG591,115

Abstract: BFG591 Application Notes
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product , base emitter collector 1 Top view BFG591 DESCRIPTION NPN silicon planar epitaxial transistor in , to Ts = 80 C; note 1 CONDITIONS open emitter open base open collector 65 MIN. BFG591 MAX , GHz; Tamb = 25 C s 21 Vo Notes 2 BFG591 MIN. 20 15 3 60 TYP. MAX. 100 250 , Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 MGC791 3.0 Ptot (W) 2.5


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PDF BFG591 BFG591 OT223 MSB002 OT223. R77/02/pp14 771-BFG591-T/R BFG591,115 BFG591 Application Notes
2010 - BFG591

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG591 NPN 7 GHz wideband transistor Product specification , wideband transistor BFG591 FEATURES DESCRIPTION  High power gain NPN silicon planar , NXP Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 LIMITING , Product specification NPN 7 GHz wideband transistor BFG591 CHARACTERISTICS Tj = 25 C (unless , transistor BFG591 MGC791 MRA749 250 3.0 Ptot (W) 2.5 handbook, halfpage hFE 200


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PDF BFG591 OT223 R77/02/pp14 BFG591
1999 - SOT23 W1P

Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
Text: SOT143 1999 Jul 21 2 N44 T1 T2 BFG591 N0 N2 FA FF FB BFQ34/01 V2p V2 BFQ68 BFQ135 , SOT143 SOT143 SOT343 BFG590/X BFG590W BFG590W/X BFG591 BFM505 BFM520 BFQ17 BFQ18A BFQ19 , BFG198 BFG541 SOT223 SOT223 SOT223 BFG135 BFG198 BFG541 BFG591 BFQ34/01 BFQ68 BFQ135 BFQ136 SOT223 SOT122E SOT122E SOT172 SOT122E BFG591 BFQ34 BFQ68 BFQ135 BFQ136 BFQ270


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PDF BF547 BF547W BF747 BFC505 OT323 OT353 OT143 SOT23 W1P MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
1997 - BFG540 N43

Abstract: w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code
Text: SOT363 BFG591 N0 N2 SOT89 SOT89 SOT89 FA FF FB SOT122E SOT23 BFQ34/01 V2p , BFG591 BFM505 BFM520 V12 V26 P8 SOT223 SOT143 SOT143 SOT143 BFG520 BFG520/X BFG520/XR , V1p V10 W1p W1 X1p X1 PSH10 BFG541 BFG591 SOT223 SOT223 BFG541 BFG591 BFQ34/01


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PDF BF547 BF547W BF689K BF747 OT323 OT353 OT143 BFG540 N43 w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code
2010 - BFG591 Application Notes

Abstract: BFG591 BFG591 amplifier DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG591 NPN 7 GHz wideband transistor Product , NPN 7 GHz wideband transistor BFG591 FEATURES DESCRIPTION High power gain NPN silicon , specification NPN 7 GHz wideband transistor BFG591 LIMITING VALUES In accordance with the Absolute , Semiconductors Product specification NPN 7 GHz wideband transistor BFG591 CHARACTERISTICS Tj = 25 C , Product specification NPN 7 GHz wideband transistor BFG591 MGC791 MRA749 250 3.0 Ptot


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PDF BFG591 OT223 R77/02/pp14 BFG591 Application Notes BFG591 BFG591 amplifier DIN45004B
SOT23 W1P

Abstract: BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 w1p code marking code V3
Text: BFG540W BFG540W/X BFG540W/XR BFG541 BFG590 BFG590/X BFG590/XR BFG590W BFG590W/X BFG590W/XR BFG591 BFM505 , BFG591 NO N2 FA FF FB BFQ34/01 V2p V2 BFQ68 BFQ135 BFQ136 FG BFQ270 PACKAGE SOT23 SOT323 SOT54 SOT23 , BFG591 BFQ34/01 BFQ68 BFQ135 BFQ136 BFQ270 BFQ621 BFR94A E1 E1p E2 E2p E6p E15 E16 F689K F763 FA FB FF FG , SOT323 TYPE NUMBER BFG16A BFG31 BFG35 BFG94 BFG97 BFG135 BFG198 BFG541 BFG591 BFQ34 BFQ68 BFQ135


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PDF BF547 BF547W BF689K BF747 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 SOT23 W1P BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 w1p code marking code V3
BFG591

Abstract: BFG591 amplifier MSB002 philips MATV amplifiers BFG591 Application Notes
Text: ^53131 GD314bb S23 ■APX -iBPrelimir^^ BFG591 LIE D™ Philips Semiconductors | NPN 8 GHz wideband transistor i—N AMER PHILIPS/DISCRETE FEATURES PINNING • High power gain PIN DESCRIPTION • Low noise figure 1 emitter • High transition frequency 2 base • Gold metallization ensures 3 emitter excellent reliability. 4 collector DESCRIPTION The BFG591 is an NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as MATV/CATV amplifiers and RF


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PDF GD314bb BFG591 BFG591 OT223 OT223. MSB002 is21i2 50K/W BFG591 amplifier MSB002 philips MATV amplifiers BFG591 Application Notes
Not Available

Abstract: No abstract text available
Text: Philips Semiconductors bbSB'lBl 0D31Mbb 2E3 ■APX Preliminary specification NPN 8 GHz wideband transistor — — BFG591 N AUER PHILIPS/DISCRETE fc^E J>" PINNING FEATURES DESCRIPTION • High power gain PIN • Low noise figure 1 emitter • High transition frequency 2 base • Gold metallization ensures excellent reliability. 3 emitter 4 collector DESCRIPTION The BFG591 is an NPN silicon planar epitaxial transistor


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PDF 0D31Mbb BFG591 BFG591 OT223 50K/W
BFE505

Abstract: BFRS20 SOT-343
Text: ) BFG540(/X)(/XR) BFG590(/X)(/XR) BFG10(/X) BFG11(/X) BFG541 BFG591 SOT223 SOT323 BFS25A BFS505 BFS520 , BFG591 BFQ540 BFQ621 BFR50S BFRS20 BFR540 BFS25A BFS505 BFS520 BFS540 BFT25A 2) V c E s j- S 0 -


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PDF OT172 BFQ621 BFT25A BFR505 BFR520 BFR540 OT143 BFG25A/X BFG505 BFG520 BFE505 BFRS20 SOT-343
BFG520

Abstract: BFQ67 Philips RF PREAMP BFG591 cordless phone circuit blt81 BFR93AW BFG541 phone circuit bfq67w
Text: O SC Driver amp PA1 BFG540/X BFG590/X BFQ67 BFR520 BFG67/X BFG520/X BFG35 BFG198 BFG541 BFG591 . , BFG67/X BFG505/X BFG520/X BFG67/X BFG520/X BFG540/X BFG540/X BFG590/X BFG10/X BFG11/X BFG541 BFG591


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PDF OT323 BFR92AW BFS25A BFS505 BFS520 BFR92A BFT25A BFR505 BFR520 OT143 BFG520 BFQ67 Philips RF PREAMP BFG591 cordless phone circuit blt81 BFR93AW BFG541 phone circuit bfq67w
BFG591 amplifier

Abstract: SC08a bfr591 sot173x BB544 BFR91 philips SIEMENS BFP520 philips bfw92 bfg65 sot143 sot172
Text: BFG590/XR BFG591 BFG621 (note 1) BFG741 (note 1) (21) (22) BFR521 (note 1) (23) BFR541 (note 1) (24 , BFG591 BLT50 (note 2) BFG135 BFG621 (note 3) PA3 BLT80 (note 2) BLT81 (note 2) Notes 1. 2. 3. European , (note 2) BFG741 (note 2) BLT11 4th 3rd 4th 4th BFG591 PA2 and PC1 PB1 PB2 BFG540/X BFG590/X


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PDF OT122 OT143 OT223 OT323 BFS17W BFG17A BFG16A BF547W BF747W BFT25 BFG591 amplifier SC08a bfr591 sot173x BB544 BFR91 philips SIEMENS BFP520 philips bfw92 bfg65 sot143 sot172
Not Available

Abstract: No abstract text available
Text: BFG591 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V(BR)CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.2 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Max. Current gain.250 @I(C) (A) (Test Condition)90m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq8GÂ @I(C) (A) (Test Condition)90m @V(CE) (V) (Test Condition)10 Power Gain Min. (dB)12Â @I(C) (A) (Test Condition


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PDF BFG591
BFM520

Abstract: BFE520 BFC520 BFC505 BF547W BFM505 BFG520W BFG505W BFG403W BFE505
Text: BFG541 BFG590 BFG590/X BFG590/XR BFG590W BFG590W/X BFG590W/XR BFG591 BFM505 BFM520 BFQ17 BFQ18A BFQ19


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PDF BF547 BF547W BF689K BF747 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 BFM520 BFM505 BFG520W BFG505W BFG403W
BFQ67W

Abstract: PMBT3640 PMBTH10 BFM520
Text: ) BFG590 (/X)(/XR) (22) BFS25A BFR540 (21) BFG25A/X BFR520 (20) BFG591 BFG590W , ) (22) NPN SOT343 15 200 500 BFG591 (22) NPN SOT223 15 200 2000 , 7.5 2000 BFG590W(/X)(/XR) 5 13 900 7.5 2000 80 5 BFG591 7 13 900


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PDF OT143 OT223 OT323 BFT25 BF747 BF547 BF547W BFS17 BFS17W BF689K BFQ67W PMBT3640 PMBTH10 BFM520
BFG591 amplifier

Abstract: BFM520 BFE505 BFC520 BFC505 BFM505 BLt92 S0T343 bf763 Philips Semiconductors Selection Guide
Text: ) BFG590 (/X)(/XR) BFQ621 BFG10(/X) BFG11(/X) BFG541 BFG591 SURFACE-MOUNT SOT223 SOT323 BFS25A BFS505 , )(/XR) BFG591 BFM505 BFM520 Note 1V CE S - Selection guide » t /Ic CURVE (see Fig.1) (20) (21) (21 , )(/XR) BFG590W(/X)(/XR) BFG591 BFM505 BFM520 Note 1. At dim = -6 0 dB, measured according to DIN45004B


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PDF BF689K BF763 BFT25 BF747 BF547 BFS17 BFS17A BFR53 BFQ17 BFG17A BFG591 amplifier BFM520 BFE505 BFC520 BFC505 BFM505 BLt92 S0T343 Philips Semiconductors Selection Guide
BFC505

Abstract: BFE520 BFE505 BFC520 BF547W BFG520W BFT93 BFM505 BFG591 transistor BFR92
Text: BFG92A/X 218 BFG591 394 BFT93W 657 BFG92A/XR 218 BFM505 403 BLT70 674


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PDF BF547 BFG198 BFQ136 BF547W BFG403W BFQ149 BF689K BFG410W BFQ270 BF747 BFC505 BFE520 BFE505 BFC520 BF547W BFG520W BFT93 BFM505 BFG591 transistor BFR92
BFT93A

Abstract: BFT92A BFG134 bf689 sot37 sot173 BFG34 BFQ52 XR SOT philips bfw92
Text: BFG541 BFG591 BFG621 BFG741 BFS540 1 SOT143 envelopes are a vailable w ith the fo llo w in g p in n in


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PDF BFY90 TQ-92 BF689K BF763 SOt-37 BFT24 BFW92 BFW93 OT-122E OT-23 BFT93A BFT92A BFG134 bf689 sot37 sot173 BFG34 BFQ52 XR SOT philips bfw92
SOT-173

Abstract: sot173 BFP96 BFQ32C
Text: 55 RF/Microwave Devices RF W ideband Transistors (cont.) V c* Curve No. (15) (21) (21) (21) (22) (22) (22) (23) (23) (23) (23) (24) (24) (24) (24) (25) (26) (7) (8) (10) (21) (22) (23) (3) (11) (10) (8) (9) (9) (9) (10) (10) (10) (10) (17) (11) (11) (7) (7) (7) Type No. BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFP90A BFP91A BFP96 BFP505 BFP520 BFP540 BFQ17 BFQ18A BFQ19 BFQ22S BFQ23 BFQ23C


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PDF BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR SOT-173 sot173 BFP96 BFQ32C
SOT-143R

Abstract: sot-143 rl SOT143R sot143 RA
Text: 99 Surface Mount Devices Wideband Transistors (cont.) R a tin g s T y p e No. NPN (cont.) BFG33/X BFG33/XR BFG35 BFG67 BFG67/X BFG67/XR BFG92A BFG92A/X BFG92A/XR BFG93A BFG93A/X BFG93A/XR BFG94 BFG97 BFG135 BFG197 BFG197/X BFG197/XR BFG198 BFG505 BFG505/X BFG505/XR BFG520 BFG520/X BFG520/XR BFG540 BFG540/X BFG540/XR BFG541 BFG590 BFG590/X BFG590/XR BFG591 BFG621 BFG741 BFQ17 BFQ18A BFQ19 BFQ67 BFQ67W BFR53 BFR92 BFR92A BFR92AW BFR93 BFR93A BFR93AW BFR106 BFR505 BFR520 BFR540 BFS17 BFS17A SO T-143 SOT


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PDF BFG33/X BFG33/XR BFG35 BFG67 BFG67/X BFG67/XR BFG92A BFG92A/X BFG92A/XR BFG93A SOT-143R sot-143 rl SOT143R sot143 RA
UAA 1006

Abstract: UXA23465 UXA23476 UAF3000 UXA23466 "BAT17" UAF4000 BFG480W TEF6860HL 2SK163
Text: BGM1011 BGM1013 BGM1014 BFG135 BFG591 BFG198 BFG540 BAP50 BAP51 BAP63 BAP64 BAP70 BAP1321 , ) BFG94 BFR93A(R) BFG135 BFG591 BFQ591 BFG198 BFG67(/X) BFQ67 BFQ67W PBR941 PBR951 PRF947


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PDF BFU725F UAA 1006 UXA23465 UXA23476 UAF3000 UXA23466 "BAT17" UAF4000 BFG480W TEF6860HL 2SK163
transistor 20107

Abstract: transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor "POCSAG Decoder" bfg135 application note MPSH10 small amplifier bfg520 antenna preamplifier
Text: ) BFG590 (/X)(/XR) BFQ621 BFG10(/X) BFG11(/X) BFG541 BFG591 SURFACE-MOUNT SOT223 SOT323 BFS25A BFS505 , )(/XR) BFG540W(/X)(/XR) BFG541 BFG590(/X)(/XR) BFG590W(/X)(/XR) BFG591 BFM505 BFM520 Note 1VcES , ) BFG540(/X)(/XR) BFG540W(/X)(/XR) BFG541 BFG590(/X)(/XR) BFG590W(/X)(/XR) BFG591 BFM505 BFM520 Note 1. At


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PDF SA5200 SA611 SA2420 SA621 SA1620 SA1921 UAA2073 UAA2077AM UAA2077BM UAA2077CM transistor 20107 transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor "POCSAG Decoder" bfg135 application note MPSH10 small amplifier bfg520 antenna preamplifier
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