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BFG425W NXP Semiconductors Bristol Electronics - -
BFG425W,115 NXP Semiconductors element14 Asia-Pacific 485 $0.65 $0.10
BFG425W,115 NXP Semiconductors element14 Asia-Pacific 485 $0.65 $0.10
BFG425W,115 NXP Semiconductors Farnell element14 485 £0.16 £0.08

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BFG425W datasheet (15)

Part Manufacturer Description Type PDF
BFG425W NXP Semiconductors BFG425W - NPN 25 GHz wideband transistor Original PDF
BFG425W NXP Semiconductors 900 MHz driver amplifier with the BFG425W Original PDF
BFG425W NXP Semiconductors AN11449 - Low Noise Flat Gain 40M~1GHz DVB-C LNA with BFG425W Original PDF
BFG425W NXP Semiconductors CDMA CELLULAR VCO WITH THE BFG425W, BFG410W AND VARACTOR BB142 Original PDF
BFG425W Philips Semiconductors NPN 25 GHz wideband transistor Original PDF
BFG425W,115 NXP Semiconductors BFG425 - TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, CMPAK-4, BIP RF Small Signal Original PDF
BFG425W,115 NXP Semiconductors NPN 25 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 25 mA; f<sub>T</sub>: 25 GHz; Frequency: 1.2 MHz; Gain @ 1.9 GHz: 28 dB; Gain @ 900 Mhz: 20@f2 dB; I<sub>C</sub>: 30 mA; ITO: 22 dBm; Noise figure: 0.8@f11.2@f2 dB; P<sub>L</sub>: 12 W; P<sub>tot</s; Package: SOT343R (CMPAK-4); Container: Tape reel smd Original PDF
BFG425W,135 NXP Semiconductors BFG425W - NPN 25 GHz wideband transistor, SOT343R Package, Standard Marking, Reel Pack, SMD, Large Original PDF
BFG425W,135 NXP Semiconductors NPN 25 GHz wideband transistor - @ f: 900 MHz; @ f1: 900 ; @ f2: 2000 ; @ I<sub>C</sub>: 25 mA; f<sub>T</sub>: 25 GHz; Frequency: 1.2 MHz; Gain @ 1.9 GHz: 28 dB; Gain @ 900 Mhz: 20@f2 dB; I<sub>C</sub>: 30 mA; ITO: 22 dBm; Noise figure: 0.8@f11.2@f2 dB; P<sub>L</sub>: 12 W; P<sub>tot</s; Package: SOT343R (CMPAK-4); Container: Tape reel smd Original PDF
BFG425W/B01,115 NXP Semiconductors BFG425W/B01 - NPN 25 GHz wideband transistor, SOT343R Package, Standard Marking, Reel Pack, SMD, 7" Original PDF
BFG425W/B01,135 NXP Semiconductors BFG425W/B01 - NPN 25 GHz wideband transistor, SOT343R Package, Standard Marking, Reel Pack, SMD, Large Original PDF
BFG425W/B,115 NXP Semiconductors BFG425W/B - NPN 25 GHz wideband transistor, SOT343R Package, Standard Marking, Reel Pack, SMD, 7" Original PDF
BFG425W/C,115 NXP Semiconductors BFG425W/C - NPN 25 GHz wideband transistor, SOT343R Package, Standard Marking, Reel Pack, SMD, 7" Original PDF
BFG425WT/R NXP Semiconductors TRANS GP BJT NPN 4.5V 0.03A 4S Original PDF
BFG425WTR Philips Semiconductors NPN 25 GHz wideband transistor Original PDF

BFG425W Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2013 - BFG425W

Abstract:
Text: AN11449 Low Noise Flat Gain 40M~1GHz DVB-C LNA with BFG425W Rev.1 — 22 October 2013 Application note Document information Info Content Keywords BFG425W , 40M~1GHz LNA, DVB-C, Abstract , BFG425W Revision history Rev Date Description 1.0 Initial Draft 20131022 Contact , with BFG425W 1. Introduction With the new NXP silicon bipolar double poly BFG400W series, it is , manufacturing Fig 1. AN11449 Application note BFG425W 40M ~ 1GHz DVB-C LNA EVB Demo Board All


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PDF AN11449 BFG425W BFG425W, BFG425W
1998 - BFG425W

Abstract:
Text: , Development 2GHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a , following performance (target): transistor: BFG425W V SUP=3.6V, ISUP~30mA freq=2GHz Power Gain: ~15dB , C5 µS4 C3 µS3 µS2 IN 50 C1 BFG425W µS1 Figure 1: Driver circuit 2 GHz Driver , . Appendix II: Results of measurements: BFG425W , V SUP=3.6V, ISUP~30mA@T=25 oC Measurements PCB: f


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PDF RNR-T45-97-B-0787 BFG425W BFG425W 15dBm BFG400W -30dBm, BFG425W, transistor bipolar driver schematic RNR-T45-97-B-0787 2Ghz amplifier b0787 BFG425 BFG425W APPLICATION
1998 - BFG425W

Abstract:
Text: , Development 900MHz DRIVER-AMPLIFIER WITH ENABLE-SWITCH USING THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier using the new BFG425W Double Poly RFtransistor. The , circuit: The circuit is designed to show the following performance (target): transistor: BFG425W V SUP , +VSUP C5 R2 C6 OUT 50 C2 R1 C1 IN 50 BFG425W R3 R4 C7 Figure 1: Driver , measurements: BFG425W , V SUP=3.0V, ISUP~11.0mA@T=25 oC ,V CON=3.0V, ICON~0.6mA@T=25 oC Measurements PCB


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PDF RNR-T45-97-B-0688 900MHz BFG425W BFG425W 900MHz. 900MHz, 900mhz driver amplifier 900mhz DRIVER DESIGN philips c3 RF 900MHz
1998 - 2F1 SMD Transistor

Abstract:
Text: W1 W2 D1 This section describes a 900 MHz LNA with the BFG425W. The performance can be , µS4 D1 Figure 10: Schematic diagram 900 MHz LNA with BFG425W. Comp Value Purpose, comment , : PCB-layout 900 MHz LNA with BFG425W. W2 Name L1 L2 R3 L3 Description length µ-stripline , the BFG425W. The performance, for different collector currents can be summarized as follows: IC [mA , BFG425W. W2 CONCLUSION Figure 12: Schematic diagram 2 GHz LNA with BFG425W. 7 High


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PDF KV96-157 BFG410W BFG425W, BFG410W BFG425W BFG425W. BFG400W 2F1 SMD Transistor 2F2 SMD Transistor w2 smd transistor TRANSISTOR SMD w2 schematic diagram induction heating smd transistor w2 BFG425W 2 GHz LNA BFG425W APPLICATION BFG425
1999 - BFG425W

Abstract:
Text: APPLICATION INFORMATION 900 MHz driver amplifier with the BFG425W Philips Semiconductors Application information 900 MHz driver amplifier with the BFG425W ABSTRACT · Description of the product The BFG425W is one of the Philips double polysilicon wideband transistors of the BFG400W series. · , amplifier with the BFG425W INTRODUCTION With the Philips double polysilicon wideband transistor BFG425W , BFG425W for a frequency of 900 MHz. CIRCUIT DESCRIPTION The following initial conditions apply for the


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PDF BFG425W BFG425W BFG400W 125006/01/pp8 BP317 hewlett packard application note 972 micro amplifier 471 philips 23 stripline pcb
1998 - Philips npo 0805

Abstract:
Text: / BFG425W@2V /10mA CMP401 MSTL PORTNUM=1 R=50 JX=0 W=0.5 mm CMP257 TWOPORT DATA=DEBBY , , Development 1.5GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly RF-transistor. The LNA is designed for , : BFG425W V ce=3V, Ic=5mA, V SUP~3.7V freq=1.5GHz Gain~14dB NF<=1.6dB VSWRi<1:2 VSWRo<1:2 The in- and , Coil_2 Coil_1 R2 OUT 50 C5 IN 50 C6 C1 W1 BFG425W µS4: µS4 L1 µS4 L2


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PDF RNR-T45-97-B-0584 BFG425W BFG425W CMP266 s10mi CMP403 CMP351 CMP250 CMP270 Philips npo 0805 5Ghz lna transistor datasheet 0805CS Series CMP264 CMP263 CMP250 CMP231 CMP230 w2 smd transistor
1999 - amplifier rf 18dbm gain 18db

Abstract:
Text: 10. IP3 deviation through by-pass enhancement. Figure 11. shows 1.9 GHz LNA with BFG425W. , frequency of operation. Philips Semiconductors' 5th generation BFG425W has been chosen for CDMA LNA , . BFG425W is also easy to match while maintaining a good noise behavior. Examination of a datasheet is a , at both 900MHz and 1.9 GHz. Figure1. BFG425W minimum noise figure as a function of the collector , . Forward transducer power gain of BFG425W The forward transducer power gain represents the gain from the


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"MARKING CODE P5"

Abstract:
Text: DISC RETE S E M IC O N D U C TO R S TM M EUT BFG425W NPN 25 GHz wideband transistor , NPN 25 GH z w i d e b a n d t ransi st or BFG425W FEATURES · V ery high pow er gain · Low noise , iconductors Product specification NPN 25 GHz wideband transistor BFG425W LIMITING VALUES In , BFG425W C H A R A C T E R IS T IC S Tj = 25 °C unless otherw ise specified. SYM BO L V(BR)CBO V (BR , 25 GHz wideband transistor BFG425W MGG683 200 c re O F) 1 cn 1OU 120 \\ C ) 1


OCR Scan
PDF BFG425W 125104/00/04/pp12 "MARKING CODE P5" BFG425W
2001 - F9 SOT23

Abstract:
Text: BFG410W BFG425W BFG480W BFG21W BGA2711 BGA2748 BGA2771 BGA2776 BGA2001 BGA2003 BGA2011 BGA2012 , SOT343R BFG403W BFG410W BFG425W BFG480W BFR92AT * BFR93AT * BFR505T * BFR520T * BFS17W * IF , BGA2003 BGA2011 BGA2012 BGA2748 PRF949 BFG410W BFG425W BFG480W BFQ67T * BFR92AT * BFR93AT , Rx BFE520 BFG410W BFG425W BFG480W BFM520 BFR93AT * Tx BFR520T * BFU510 BFU540 , BGA2771 BFG21W BFG425W BGA2776 BFG480W PRF957 BGA2031/1 Please turn over for more detailed


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PDF PMBTH10 PMBTH81 BFS17W BFR92AT BFT92W BFR93AT PBR941 PBR951 PRF947 PRF949 F9 SOT23 BFG425W IC vco 900 1800 mhz BGA2022 2.45 Ghz power amplifier BFG410W sot343r BFG480W B770LNA9M410 BFE520
1999 - BFG425W

Abstract:
Text: APPLICATION INFORMATION 2.4 GHz power amplifier with the BFG425W and the BFG21W Philips Semiconductors Application information 2.4 GHz power amplifier with the BFG425W and the BFG21W ABSTRACT · Description of the product The BFG425W is a double polysilicon wideband transistor and the BFG21W , Semiconductors Application information 2.4 GHz power amplifier with the BFG425W and the BFG21W INTRODUCTION The Philips transistors BFG425W and BFG21W used in this amplifier, are manufactured according to


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PDF BFG425W BFG21W BFG21W 603508/01/pp12 amplifier 2606 BFG425 PHILIPS TRANSISTORS STR 6507 texas rf power transistor transistor bf 203
2003 - SOT343R

Abstract:
Text: BFG540W(/X) 9 15 BFG403W 17 4.5 BFG480W 21 4.5 BFG410W 22 4.5 BFG425W 25 4.5 BFG21W 18 , BGF310W/XR BFG325W/XR BFG403W BFG410W BFG425W BFG480W BFG21W BGA2711 BGA2748 BGA2771 BGA2776 , SOT89 SOT89 SOT343R SOT343R LNA BFG403W BFG410W BFG425W BFU510 BFU540 BGA2001 BGA2003 IF BGA2004* BGA2011 BGA2012 BGA2715 BGA2717 BGA2748 BGU2003 BFG310(W)/XR BFG325(W)/XR BFG425W , BGA2776 IF Buffer & VCO BFG310(W)/XR BFG325(W)/XR BFG410W BFG425W BFG480W BFU510 BFU540


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PDF PMBHT10 PBR941 PBR951 PMBTH81 BFG310/XR BFG325/XR OT323, BFS17W PRF547 PRF957 SOT343R IC vco 900 1800 mhz SC 2272 "dual TRANSISTORs" sot363 BFG480W bga2004 BGA2771 BGA2709 PBR951 BFG310W/XR
1998 - BGF425W

Abstract:
Text: BFG425W. 1998 Mar 23 20 4 Philips Semiconductors 50 W base station power amplifier for , INTRODUCTION 3 PRE-DRIVER ( BFG425W ) 4 DRIVER (BGY1816/BGY1916) 5 FINAL STAGE (BLV2046) 6 , using the following Philips components (see Fig.1): stage 1: BFG425W wide band transistor, stage 2 , wide band operation over 1800 to 2000 MHz (no tune design). The 5 V supply powers the BFG425W and can , Application Note AN98024 PRE-DRIVER ( BFG425W ) The BFG400W series wide band silicon transistors are


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PDF DCS1800 PCS1900 AN98024 BFG425W) BGY1816/BGY1916) BLV2046) BGF425W BFG425W BFG400W RT4000 BFC425W texas rf power transistor BGY1816 BGY1916 BLV2046
"BJT Transistors"

Abstract:
Text: 1.9 GHz LNA with BFG425W. Capacitor C2 and C5 will resonate at frequency of operation. C3 and C4 , generation BFG425W has been chosen for CDMA LNA application because it delivers high RF performance at low , feedback capacitance ensures high isolations. BFG425W is also easy to match while maintaining a good noise , . BFG425W minimum noise figure as a function of the collector current Gain available from the transistor vs , 900 M Hz S21 @ 1 9 G Hz . Figure 2. Forward transducer power gain of BFG425W The forward


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2010 - "MARKING CODE P5"

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG425W NPN 25 GHz wideband transistor Product , NPN 25 GHz wideband transistor BFG425W FEATURES PINNING Very high power gain PIN , specification NPN 25 GHz wideband transistor BFG425W LIMITING VALUES In accordance with the Absolute , Product specification NPN 25 GHz wideband transistor BFG425W CHARACTERISTICS Tj = 25 C unless , BFG425W MGG682 120 MGG683 200 handbook, halfpage handbook, halfpage Cre (fF) hFE


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PDF BFG425W R77/05/pp13 "MARKING CODE P5" BFG425W transistor nf 37
1998 - BFG425W

Abstract:
Text: , Development 900MHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a , ): transistor: BFG425W V SUP=3V, ISUP~10mA freq=900MHz Power Gain: >12dB VSWRi<1:2 VSWRo<1:2 The in- and , R2 OUT 50 C2 R1 C1 IN 50 W1 BFG425W µS4: µS4 L1 µS4 L2 D1 L3 W2 , diameter of via-hole Appendix II: Results of simulations and measurements: BFG425W , V SUP=3.0V, ISUP


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PDF RNR-T45-97-B-0686 Aug1997 900MHz BFG425W BFG425W 900MHz. 900MHz, do30dBm, -30dBm, BFG425W APPLICATION RNR-T45-97-B-0686 transistor bipolar driver schematic Z048
1999 - BFG425W

Abstract:
Text: APPLICATION INFORMATION 1.9 GHz low noise amplifier with the BFG425W Philips Semiconductors Application information 1.9 GHz low noise amplifier with the BFG425W CIRCUIT DIAGRAM R5 handbook , Semiconductors Application information 1.9 GHz low noise amplifier with the BFG425W COMPONENT LIST Table , , MANUFACTURER PURPOSE, COMMENT TR1 BFG425W SOT343R Philips RF transistor R1 39 k 0603 , amplifier with the BFG425W BOARD LAYOUT The layout has been designed with the Hewlett Packard Microwave


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PDF BFG425W MGS733 125006/01/pp8 BFG425W BP317 micro amplifier 471 0805CS Hewlett-Packard transistor microwave philips 23 philips application notes
2000 - 43p transistor

Abstract:
Text: , Development CDMA CELLULAR VCO WITH THE BFG425W , BFG410W AND VARACTOR BB142 Abstract: This application , fifth generation BFG425W and BFG410W Double Poly RF-transistors. The BB142 is a new varactor specially , noise at 60 kHz <= -117 dBc/Hz VSWRo<2:1 transistor: BFG425W , BFG410W varactor : BB142 The output , R2 22k R3 390 R4 2k R5 1k R6 100 L1 82n L2 12n L3 4n T1 BFG425W T2 BFG410W , L1 L2 L3 T1 T2 Varactor 22k 390 2k 1k 100 82n 12n 4n (W=0.7mm;L=9.6mm) BFG425W


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PDF RNR-45-98-B-0827 BFG425W, BFG410W BB142 BFG425W BFG410W BB142 IS-95 15KHz) 30KHz) 43p transistor 0402_PHILIPS tdk VCO BFG425W APPLICATION 2K 0402 1K 1608 TRANSISTOR noise figure measurements
2006 - uaf4000

Abstract:
Text: SOT343 SOT343 SOT343 SOT23 SOT416 SOT323 Type BFG410W BFG425W BFG480W BFR520T BFR505T , Product MMIC Low noise wideband amplifier Product Type BFG21W BFG425W BFG480W BGA2031/1 , Product Bipolar transistor MMIC Type BFG410W BFG425W BFG480W BGA2022 * = 2 stage variable , BFG410W BFG425W BFG21W BFG480W BFG410W BFG480W BFG425W , BFG410W BGA2003 BGA2001 BGA2003 BGA2012 BGA2011 BFG425W , BFG21W BGA2022 BFG410W, BFG425W NXP Semiconductors RF Manual 9th edition


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PDF 20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking SMD transistor n36 BFG480W vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG BFG135 power amplifier for 900Mhz
2010 - BFG425W

Abstract:
Text: DISCRETE SEMICONDUCTORS DAT BFG425W NPN 25 GHz wideband transistor Product specification , wideband transistor BFG425W FEATURES PINNING  Very high power gain PIN DESCRIPTION , NPN 25 GHz wideband transistor BFG425W LIMITING VALUES In accordance with the Absolute Maximum , K/W NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W , Product specification NPN 25 GHz wideband transistor BFG425W MGG682 120 MGG683 200


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PDF BFG425W R77/05/pp13 BFG425W
1968 - 2SK508

Abstract:
Text: BFG425W (S21) ` A A C B B C A B- C- RF RF 30 2 BFG425W 3GHz S21 1 3GHz 2 0 1 |r|=0.34 3 (r)=-50 50 Zo=50 65.2 1.38pF BFG425W 20log(|r|)=-9.36dB Xcon=-Im{Z}=-{-j38.4 }=+j38.4 L , , , BFG425W , NPN 25GHz Philips , , 1999 7 23, , BGA2003, MMIC Philips , , 2000 Dec 04, , BGA2022, MMIC , /al)plicationnotes/900MHAP2.pdf BFG410W BFG410W, BFG425W BFG425W BFG425W BFG425W RF


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PDF BB202 BGA6589 com/catalog/219/282/27046/index 31-24-3536195ronald 2SK508 TEA5767 IRF power mosfets catalog 2SK147BL 2SK163 Funkamateur bfr53 2SK43 2SK162-K 2SK163-L
1998 - L05 SMD

Abstract:
Text: W=Wvia CMP287 MSTL R=0.3 OH C=100 nF SUBST=s10mi LOW NOISE AMP. WITH BFG425W@2V /10mA , SUBST=s10mi CMP281 cmc_0603_phi l SB1/ BFG425W@2V /10mA CMP203 cmc_0603_phi W=Wvia L=Lvi l , , Development IMPROVED IP3 BEHAVIOUR OF THE 900MHz LOW NOISE AMPLIFIER WITH THE BFG425W UPDATE OF REPORT , new BFG425W Double Poly RF-transistor. The LNA is designed for a frequency f=900MHz, VSUP~3.8V, ISUP , . Designing the circuit: The circuit is designed to show the following performance: transistor: BFG425W V


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PDF RNR-T45-96-B-1025 900MHz BFG425W RNR-T45-96-B-771 BFG425W 900MHz, 900MHz: CMP257 CMP383 L05 SMD CMP266 L6 PHILIPS RNR-T45-96-B-1025 transistor smd Sb1 BFG400W CMP401 CMP265 CMP231
2000 - BFG425

Abstract:
Text: , Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly RF-transistor. The LNA is designed for , . Designing the circuit: The circuit is designed to show the following performance: transistor: BFG425W Vce , OUT 50 µS2 IN 50 C5 BFG425W W1 C1 µS4: µS4 L1 L2 µS4 D1 L3 W2 , . Appendix II: Used components & materials C1 BFG425W RFin R2 C6 RFout R1 R5 C2 C5 C3


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PDF RNR-T45-96-B-773 14-Nov-1996 BFG425W BFG425W BFG400W 100KHz BFG425 2 GHz LNA BFG410W RNR-T45-96-B-773 TRANSISTOR noise figure measurements
1998 - "MARKING CODE P5"

Abstract:
Text: DISCRETE SEMICONDUCTORS BFG425W NPN 25 GHz wideband transistor Product specification , Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING · , NPN 25 GHz wideband transistor BFG425W LIMITING VALUES In accordance with the Absolute Maximum , Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W CHARACTERISTICS Tj = 25 , NPN 25 GHz wideband transistor BFG425W MGG682 120 MGG683 200 handbook, halfpage


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PDF BFG425W SCA57 125104/00/04/pp12 "MARKING CODE P5" 03389 BFG425W
1997 - "MARKING CODE P5"

Abstract:
Text: DISCRETE SEMICONDUCTORS BFG425W NPN 25 GHz wideband transistor Product specification Supersedes , base CONDITIONS MIN. - - - - 50 - 2 Top view 1 MSB842 BFG425W PINNING PIN 1 2 3 4 emitter base , emitter - - - - - -65 - MIN. BFG425W MAX. 10 4.5 1 30 135 +150 150 V V V UNIT mA mW °C °C , (BR)CBO V(BR)CEO V(BR)EBO ICBO hFE Cc Ce Cre fT Gmax S 21 F 2 BFG425W PARAMETER collector-base , specification NPN 25 GHz wideband transistor BFG425W MGG682 handbook, halfpage 120 handbook


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PDF BFG425W SCA55 127127/00/03/pp12 "MARKING CODE P5"
1998 - RF power amplifier MHz

Abstract:
Text: IP3. (BFG410 W and BFG425W ), "KV96-157, December 1996". 9. Power Amplifier for 1.9 GHz Dect and PHS ( BFG425W and BFG21W) "RNR-T45-96T-838"; 15 October 1996. 1997 Dec 18 75 Philips Semiconductors


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PDF BFG10/X, BFG11/X BFG540/X) RNR45/458/1992, BFR/BFG505/520, RNR45/589/1992, BFG505) RNR45/343/1992, BFG505/X, BFG520 RF power amplifier MHz BFC505 amplifier 1 2 ghz BFG410 BFG425W BLT82 GSM down converter power amplifier
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