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NXP Semiconductors
BF998R,215 DUAL N CH RF MOSFET, 12V, 30MA, 4-SOT-143R; Drain Source Voltage Vds:12V; Continuous Drain Current Id:30mA; Power Dissipation Pd:200mW; Operating Frequency Min:-; Operating Frequency Max:-; RF Transistor Case:SOT-143R; MSL:- RoHS Compliant: Yes BF998R,215 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 BF998R,215 Cut Tape 0 3,000 - - - - - More Info
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BF998RAW BF998RAW ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. BF998RAW 2,070 - - - - - More Info
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BF998RWBGS08 BF998RWBGS08 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. BF998RWBGS08 2,875 - - - - - More Info

BF998R datasheet (36)

Part ECAD Model Manufacturer Description Type PDF
BF998R BF998R ECAD Model Infineon Technologies Single Non Biased; Package: PG-SOT143-4; I<sub>D</sub> (max): 30.0 mA; P<sub>tot</sub> (max): 200.0 mW; g<sub>fs</sub> (typ): 24.0 mS; G<sub>p</sub> (typ): 20.0 dB; F (typ): 1.8 dB; Original PDF
BF998R BF998R ECAD Model Infineon Technologies Silicon N-Channel MOSFET Tetrode Original PDF
BF998R BF998R ECAD Model Infineon Technologies Silicon N-Channel MOSFET Tetrode Original PDF
BF998R BF998R ECAD Model NXP Semiconductors BF998R - Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS Original PDF
BF998R BF998R ECAD Model Philips Semiconductors Silicon N-channel dual-gate MOS-FETs Original PDF
BF998R BF998R ECAD Model Philips Semiconductors Silicon N-Channel Dual Gate MOS-FET Original PDF
BF998R BF998R ECAD Model Siemens Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) Original PDF
BF 998R BF 998R ECAD Model Siemens MOSFET, Silicon N-Channel MOSFET Tetrode Original PDF
BF998R BF998R ECAD Model Vishay Telefunken TRANS MOSFET N-CH 12V 0.03A 4SOT-143R Original PDF
BF998R BF998R ECAD Model Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
BF998R BF998R ECAD Model Philips Semiconductors Silicon N-Channel Dual Gate MOS-FET Scan PDF
BF998R,215 BF998R,215 ECAD Model NXP Semiconductors Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 2 to 18 mA; I<sub>DSS</sub> min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; V<sub>DS</sub>max: 12 V; Y<sub>FS</sub> min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original PDF
BF998R,215 BF998R,215 ECAD Model NXP Semiconductors BF998 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-4, FET RF Small Signal Original PDF
BF998R,235 BF998R,235 ECAD Model NXP Semiconductors Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 2 to 18 mA; I<sub>DSS</sub> min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; V<sub>DS</sub>max: 12 V; Y<sub>FS</sub> min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original PDF
BF998R,235 BF998R,235 ECAD Model NXP Semiconductors BF998R - Silicon N-channel dual-gate MOS-FETs, SOT143R Package, Standard Marking, Reel Pack, SMD, Low Profile, Large Original PDF
BF998RA BF998RA ECAD Model Vishay Telefunken TRANS MOSFET N-CH 12V 0.03A 4SOT-143R Original PDF
BF998RA BF998RA ECAD Model Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
BF998RA-GS08 BF998RA-GS08 ECAD Model Vishay Telefunken TRANS MOSFET N-CH 12V 0.03A 4SOT-143R Original PDF
BF998RAW BF998RAW ECAD Model Vishay Telefunken TRANS MOSFET N-CH 12V 0.03A 4SOT-343R Original PDF
BF998RAW BF998RAW ECAD Model Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF

BF998R Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BF998

Abstract: MGA002 MGE802 bf998 Mop Dual-Gate cfs 455 j BF998R cfs 455 f UGC469 marking code g1s
Text: view ►H-4 ^►l-W, s,b Marking code: MOp. Fig.2 Simplified outline (SOT143R) and symbol; BF998R. , \ \ \ \ \ \ \ \ \ \ 0 100 200 Tamb (°c) Fig.4 Power derating curve; BF998R. 1996 Aug 01 3 ■711DfiHtj DlDbTHb 455 , Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R , Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R LIMITING VALUES In accordance , Tamb = 50 °C; see Fig.3; note 2 - 200 mW Ptot total power dissipation; BF998R up to Tamb = 50 °C


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PDF BF998; BF998R OT143 OT143R 7110fl5b OT143. OT143R. BF998 MGA002 MGE802 bf998 Mop Dual-Gate cfs 455 j BF998R cfs 455 f UGC469 marking code g1s
BF998

Abstract: No abstract text available
Text: / BF998R / BF998RW BF998A/ BF998RA / BF998RAW BF998B/ BF998RB / BF998RBW Min 12 ±V(BR)G1SS Type , 85011 Rev. 4, 23-Jun-99 www.vishay.de • FaxBack+1-408-970-5600 5(9) BF998/ BF998R / BF998RW_ , BF998/ BF998R / BF998RW Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , +1-408-970-5600 1 (9) BF998/ BF998R / BF998RW ViSHAY Vishay Telefunken Absolute Maximum Ratings Tamb = 25 , Number 85011 Rev. 4, 23-Jun-99 BF998/ BF998R / BF998RW Vishay Telefunken Electrical AC Characteristics


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PDF BF998/BF998R/BF998RW BF998 BF998R 23-Jun-99 BF998RW
2003 - g1 TRANSISTOR SMD MARKING CODE

Abstract: marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 BF998 g1 7 TRANSISTOR SMD MARKING CODE
Text: code: MOp. Fig.2 Simplified outline (SOT143R) and symbol; BF998R. QUICK REFERENCE DATA SYMBOL , ) Printed-circuit board. Fig.3 Power derating curves; BF998. Fig.4 Power derating curve; BF998R. 1996 Aug , DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs , television tuners and professional communications equipment. Top view handbook, halfpage BF998; BF998R , Fig.3; note 1 up to Tamb = 50 °C; see Fig.3; note 2 total power dissipation; BF998R up to Tamb = 50 °C


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PDF BF998; BF998R BF998R MAM039 BF998 g1 TRANSISTOR SMD MARKING CODE marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 g1 7 TRANSISTOR SMD MARKING CODE
PHILIPS MOSFET MARKING

Abstract: BF998R UBB087
Text: ^53131 00Z3fc.M3 474 ■APX BF998R N Af1ER PHILIPS/DISCRETE b?E D Silicon n-channel dual gate MOS-FET , Product specification BF998R MECHANICAL DATA Dimensions in mm Marking code BF998R = MOp 0.15 0.09 , APIER PHILIPS/DISCRETE b?E D - Silicon n-channel dual gate MOS-FET BF998R LIMITING VALUES Limiting , - N ANER PHILIPS/DISCRETE b?E D- Silicon n-channel dual gate MOS-FET BF998R STATIC CHARACTERISTICS , n-channel dual gate MOS-FET BF998R vdsM Fig.4 Output characteristics; Vq2-s = 4 V; Tamb = 25 °C


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PDF 00Z3fc BF998R OT143R PHILIPS MOSFET MARKING UBB087
2001 - application BF998

Abstract: BF998R 800MHz BF998
Text: / BF998RW BF998A/ BF998RA / BF998RAW BF998B/ BF998RB / BF998RBW IDSS IDSS IDSS ­VG1S(OFF) ­VG2S(OFF) 4 4 9.5 1.0 , BF998/ BF998R / BF998RW Vishay Telefunken N­Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , , 23-Jun-99 www.vishay.com 1 (8) BF998/ BF998R / BF998RW Vishay Telefunken Maximum Thermal , Number 85011 Rev. 4, 23-Jun-99 BF998/ BF998R / BF998RW Vishay Telefunken Typical Characteristics (Tamb , www.vishay.com 4 (8) Document Number 85011 Rev. 4, 23-Jun-99 BF998/ BF998R / BF998RW Vishay Telefunken VDS =


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PDF BF998/BF998R/BF998RW BF998 BF998R BF998RW D-74025 23-Jun-99 application BF998 BF998R 800MHz
1996 - BF998

Abstract: MGA002 MGE802 BF998 depletion MGE814 bb405 MGE812 bf-998 dual-gate BF998R
Text: Marking code: MOp. Fig.2 Simplified outline (SOT143R) and symbol; BF998R. QUICK REFERENCE DATA , derating curve; BF998R. 3 Philips Semiconductors Product specification Silicon N-channel , DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs , BF998; BF998R FEATURES · Short channel transistor with high forward transfer admittance to input , Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R


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PDF BF998; BF998R MAM039 BF998 MGA002 MGE802 BF998 depletion MGE814 bb405 MGE812 bf-998 dual-gate BF998R
2010 - Not Available

Abstract: No abstract text available
Text: (SOT143R) and symbol; BF998R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX , 01 Fig.4 Power derating curve; BF998R. 3 NXP Semiconductors Product specification , DISCRETE SEMICONDUCTORS DAT BF998; BF998R Silicon N-channel dual-gate MOS-FETs Product , Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES  Short channel transistor with high , specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R LIMITING VALUES In accordance with


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PDF BF998; BF998R MAM039 R77/02/pp15
2005 - Not Available

Abstract: No abstract text available
Text: SOT143 BF998B BF998B-GS08 MO SOT143 BF998R BF998RA-GS08 or BF998RB-GS08 MOR SOT143R BF998RA BF998RA-GS08 MOR SOT143R BF998RB BF998RB-GS08 MOR SOT143R BF998RW BF998RAW-GS08 or BF998RBW-GS08 WMO SOT343R BF998RAW BF998RAW-GS08 WMO SOT343R BF998RBW BF998RBW-GS08 WMO SOT343R Document Number 85011 Rev. 1.6, 31-Aug-05 www.vishay.com , 10.5 mA BF998B/ BF998RB / BF998RBW VDS = 8 V, VG1S = 0, VG2S = 4 V BF998/ BF998R


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PDF BF998 BF998R BF998RW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R D-74025
2006 - BF998B

Abstract: BF998 VISHAY bf998 BF998A-GS08 BF998A BF998R BF998RAW BF998RB BF998RW BF998RA
Text: BF998B-GS08 MO SOT143 BF998R BF998RA-GS08 or BF998RB-GS08 MOR SOT143R BF998RA BF998RA-GS08 MOR SOT143R BF998RB BF998RB-GS08 MOR SOT143R BF998RW BF998RAW-GS08 or BF998RBW-GS08 WMO SOT343R BF998RAW BF998RAW-GS08 WMO SOT343R BF998RBW BF998RBW-GS08 , , VG1S = 0, VG2S = 4 V BF998/ BF998R / BF998RW BF998A/ BF998RA / BF998RAW Drain current IDSS , BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode


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PDF BF998 BF998R BF998RW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R OT-343R BF998B BF998 VISHAY BF998A-GS08 BF998A BF998RAW BF998RB BF998RW BF998RA
2001 - BF998RW

Abstract: BF998 BF998R BF998RAW application BF998
Text: / BF998R / BF998RW BF998A/ BF998RA / BF998RAW BF998B/ BF998RB / BF998RBW Symbol V(BR)DS 50 nA , BF998/ BF998R / BF998RW Vishay Semiconductors N­Channel Dual Gate MOS-Fieldeffect Tetrode , www.vishay.com 1 (8) BF998/ BF998R / BF998RW Vishay Semiconductors Maximum Thermal Resistance Tamb = 25 , 85011 Rev. 4, 23-Jun-99 BF998/ BF998R / BF998RW Vishay Semiconductors Typical Characteristics (Tamb , . Output Capacitance vs. Drain Source Voltage www.vishay.com 3 (8) BF998/ BF998R / BF998RW Vishay


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PDF BF998/BF998R/BF998RW BF998R BF998 BF998RWmprove D-74025 23-Jun-99 BF998RW BF998RAW application BF998
BF998 depletion

Abstract: BF988 bf988 sot 143 BF998
Text: viSM A Y _ BF998/ BF998R Vishay Telefunken N-Channel Dual Gate , · High AGC-range High gain Available with reverse ( BF998R ) on request pin configuration 2 R , =Gate 2, 4=Gate 1 BF998R Marking: MOR Plastic case (SOT 143R) 1 =Source, 2=Drain, 3=Gate 2, 4=Gate 1 , ) BF998/ BF998R Vishay Telefunken Electrical DC Characteristics Tamb = 25°C, unless otherwise specified , DS = 0 V ds = 8 V, V q is = 0> V G2S = 4 V V G2S = V DS BF998 / BF998R BF998 A/BF988 RA BF998 B


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PDF BF998/BF998R BF998R) BF998 BF998R D-74025 20-Jan-99 BF998 depletion BF988 bf988 sot 143
1997 - BF 998

Abstract: BF998 BF998R 4551
Text: BF998/ BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive , 95 10831 94 9278 3 BF998R Marking: MOR Plastic case (SOT 143R) 1 = Source; 2 = Drain; 3 = , TELEFUNKEN Semiconductors Rev. A2, 07-Mar-97 1 (8) BF998/ BF998R Electrical DC Characteristics Tamb , Semiconductors Rev. A2, 07-Mar-97 BF998/ BF998R Common Source S-Parameters VG2S = 4 V, Z0 = 50 W S11 , ­28.6 ­31.3 ­34.0 ­36.9 ­39.9 deg 3 (8) BF998/ BF998R Typical Characteristics (Tj = 25


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PDF BF998/BF998R BF998 BF998R D-74025 07-Mar-97 BF 998 4551
2004 - bf998 MOW

Abstract: marking code mow marking MOW sot143 MOW sot143 BF998B BF998B-GS08 BF998R marking MOW BF998 BF998RAW-GS08
Text: BF998B BF998B-GS08 MO SOT143 BF998R BF998RA-GS08 or BF998RB-GS08 MOR SOT143R BF998RA BF998RA-GS08 MOR SOT143R BF998RB BF998RB-GS08 MOR SOT143R BF998RW BF998RAW-GS08 or BF998RBW-GS08 MOW SOT343R BF998RAW BF998RAW-GS08 MOW SOT343R BF998RBW , BF998B/ BF998RB / BF998RBW VDS = 8 V, VG1S = 0, VG2S = 4 V BF998/ BF998R / BF998RW BF998A , BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode


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PDF BF998 BF998R BF998RW OT-143 OT-143R OT-343R BF998 OT-143 OT-343R bf998 MOW marking code mow marking MOW sot143 MOW sot143 BF998B BF998B-GS08 marking MOW BF998RAW-GS08
bf998rb

Abstract: BF998 BF998R BF998RAW BF998RW application BF998
Text: / BF998R / BF998RW BF998A/ BF998RA / BF998RAW BF998B/ BF998RB / BF998RBW Symbol V(BR)DS 50 nA , BF998/ BF998R / BF998RW Vishay Telefunken N­Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , 1 (8) BF998/ BF998R / BF998RW Vishay Telefunken Maximum Thermal Resistance Tamb = 25_C, unless , 85011 Rev. 4, 23-Jun-99 BF998/ BF998R / BF998RW Vishay Telefunken Typical Characteristics (Tamb = 25 , . Output Capacitance vs. Drain Source Voltage www.vishay.com 3 (8) BF998/ BF998R / BF998RW Vishay


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PDF BF998/BF998R/BF998RW BF998R BF998 BF998RW D-74025 23-Jun-99 bf998rb BF998RAW application BF998
ap 4606

Abstract: SFE 7.02 MHz ap 4606 ic t469 SFE 8
Text: BF998/ BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive , Gate 2; 4 = Gate 1 BF998R Marking: MOR Plastic case (SOT 143R) 1 = Source; 2 = Drain; 3 = Gate 2; 4 , TELEFUNKEN Semiconductors Rev. A2, 07-Mar-97 Temic S e m i c o n d u c t o r s BF998/ BF998R type , TELEFUNKEN Semiconductors Rev. A2, 07-Mar-97 87 BF998/ BF998R Common Source S-Parameters V G2S = 4 V , , 07-Mar-97 Tem ic S e m i c o n d u c t o r s BF998/ BF998R Topical Characteristics (Tj = 25


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PDF BF998/BF998R BF998 BF998R 07-Mar-97 ap 4606 SFE 7.02 MHz ap 4606 ic t469 SFE 8
2001 - BF998R

Abstract: 998 transistor transistor BF 998
Text: BF998R Silicon N-Channel MOSFET Tetrode Short-channel transistor For low-noise , sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration 1 , Application Note Thermal Resistance 1 Aug-10-2001 BF998R Electrical Characteristics at TA = 25 °C , 2 source pinch-off voltage VDS = 8 V, VG1S = 0 , ID = 20 µA 2 Aug-10-2001 BF998R , Aug-10-2001 BF998R Output characteristics ID = f (VDS ) Total power dissipation Ptot = f(TS


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PDF BF998R OT143R sold00 EHT07305 EHT07306 Aug-10-2001 BF998R 998 transistor transistor BF 998
1999 - BF998R 800MHz

Abstract: BF998 BF998 VISHAY BF998R BF998RAW BF998RW BF998 depletion application BF998
Text: 7 14 V ±IG1SS 50 nA ±IG2SS BF998/ BF998R / BF998RW BF998A/ BF998RA / BF998RAW BF998B/ BF998RB / BF998RBW Symbol V(BR)DS 50 nA 18 mA IDSS 4 IDSS 4 IDSS , BF998/ BF998R / BF998RW Vishay Telefunken N­Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , +1-408-970-5600 1 (9) BF998/ BF998R / BF998RW Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless , 1.0 V Document Number 85011 Rev. 4, 23-Jun-99 BF998/ BF998R / BF998RW Vishay Telefunken


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PDF BF998/BF998R/BF998RW BF998 BF998R BF998RW D-74025 23-Jun-99 BF998R 800MHz BF998 VISHAY BF998RAW BF998 depletion application BF998
2005 - BF998B-GS08

Abstract: NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08
Text: Part BF998 BF998A BF998B BF998R BF998RA BF998RB BF998RW BF998RAW BF998RBW Ordering Code BF998A-GS08 or BF998B-GS08 BF998A-GS08 BF998B-GS08 BF998RA-GS08 or BF998RB-GS08 BF998RA-GS08 BF998RB-GS08 BF998RAW-GS08 or BF998RBW-GS08 BF998RAW-GS08 BF998RBW-GS08 MO MO MO MOR MOR MOR WMO WMO WMO Marking SOT143 SOT143 SOT143 SOT143R , / BF998RW BF998A/ BF998RA / BF998RAW BF998B/ BF998RB / BF998RBW Gate 1 - source cut-off voltage Gate 2 - , BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode


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PDF BF998 BF998R BF998RW 2002/95/EC 2002/96/EC OT-143 OT-143R OT-343R OT-143 BF998B-GS08 NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08
Not Available

Abstract: No abstract text available
Text: 0023k.*4 474 ■APX 3 BF998R N Af1ER PHILIPS/DISCRETE k.?E D October 1990 FEATURES â , - Silicon n-channel dual gate M OS-FET BF998R MECHANICAL DATA Dimensions in mm M arking code BF998R = MOp See also soldering recommendations. Fig.1 SOT143R. PIN CONFIGURATION , PHILIPS/DISCRETE b7E D Silicon n-channel dual gate M OS-FET BF998R LIMITING VALUES Limiting values , Semiconductors N AUER PHI LIP S/ DISCR ETE b?E D Silicon n-channel dual gate M OS-FET BF998R STATIC


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PDF 0023k. BF998R lYfSI/C15. OT143R bbS3T31
2004 - Not Available

Abstract: No abstract text available
Text: (BR)G2SS ± IG1SS ± IG2SS BF998/ BF998R / BF998RW BF998A/ BF998RA / BF998RAW BF998B/ BF998RB / BF998RBW , VISHAY BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect , , 31-Aug-04 www.vishay.com 1 BF998 / BF998R / BF998RW Vishay Semiconductors Maximum Thermal , 2 Document Number 85011 Rev. 1.5, 31-Aug-04 VISHAY BF998 / BF998R / BF998RW Vishay , Rev. 1.5, 31-Aug-04 www.vishay.com 3 BF998 / BF998R / BF998RW Vishay Semiconductors VISHAY


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PDF BF998 BF998R BF998RW OT-143 OT-143R OT-343R OT-143 OT-143R
2010 - BF998R

Abstract: BF998 MGA002 MGE802 application BF998 dual-gate
Text: (SOT143R) and symbol; BF998R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX , . 1996 Aug 01 Fig.4 Power derating curve; BF998R. 3 NXP Semiconductors Product specification , DISCRETE SEMICONDUCTORS DATA SHEET BF998; BF998R Silicon N-channel dual-gate MOS-FETs , specification Silicon N-channel dual-gate MOS-FETs BF998; BF998R FEATURES Short channel transistor , dual-gate MOS-FETs BF998; BF998R LIMITING VALUES In accordance with the Absolute Maximum Rating


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PDF BF998; BF998R MAM039 R77/02/pp15 BF998R BF998 MGA002 MGE802 application BF998 dual-gate
Not Available

Abstract: No abstract text available
Text: Philips Semiconductors Data sheet status Product specification date of issue BF998R , Philips Semiconductors Silicon n-channel dual gate MOS-FET BF998R MECHANICAL DATA Dimensions in mm Marking code BF998R = MOp See also soldering recommendations. Fig.1 SOT143R. PIN , gate MOS-FET BF998R LIMITING VALUES Limiting values in accordance with the Absolute Maximum , Product specification Philips Semiconductors BF998R Silicon n-channel dual gate MOS-FET STATIC


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PDF BF998R OT143R
2004 - BF998 vishay

Abstract: application BF998 12864
Text: (BR)G2SS ± IG1SS ± IG2SS BF998/ BF998R / BF998RW BF998A/ BF998RA / BF998RAW BF998B/ BF998RB / BF998RBW , VISHAY BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect , , 23-Aug-04 www.vishay.com 1 BF998 / BF998R / BF998RW Vishay Semiconductors Maximum Thermal , , VG2S = 4 V BF998 / BF998R / BF998RW Vishay Semiconductors Symbol Min Typ. Max Unit , Admittance Document Number 85011 Rev. 1.5, 23-Aug-04 www.vishay.com 5 BF998 / BF998R / BF998RW


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PDF BF998 BF998R BF998RW OT-143 OT-143R OT-343R OT-143 OT-143R BF998 vishay application BF998 12864
1997 - BF998

Abstract: bf 107 a BF998R BF998 depletion BF998A k d 998 0
Text: BF998/ BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive , BF998R Marking: MOR Plastic case (SOT 143R) 1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1 Absolute , plated with 35 mm Cu TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 1 (5) BF998/ BF998R , F 1.5 dB TELEFUNKEN Semiconductors Rev. A1, 17-Apr-96 BF998/ BF998R Common Source , ­20.0 ­22.8 ­25.7 ­28.6 ­31.3 ­34.0 ­36.9 ­39.9 3 (5) BF998/ BF998R Dimensions of BF998 in


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PDF BF998/BF998R BF998 BF998R D-74025 17-Apr-96 bf 107 a BF998 depletion BF998A k d 998 0
2004 - Not Available

Abstract: No abstract text available
Text: SOT143 BF998B BF998B-GS08 MO SOT143 BF998R BF998RA-GS08 or BF998RB-GS08 MOR SOT143R BF998RA BF998RA-GS08 MOR SOT143R BF998RB BF998RB-GS08 MOR SOT143R BF998RW BF998RAW-GS08 or BF998RBW-GS08 WMO SOT343R BF998RAW BF998RAW-GS08 WMO SOT343R BF998RBW BF998RBW-GS08 WMO SOT343R Document Number 85011 Rev. 1.5, 01-Dec-04 www.vishay.com , 10.5 mA BF998B/ BF998RB / BF998RBW VDS = 8 V, VG1S = 0, VG2S = 4 V BF998/ BF998R


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PDF BF998 BF998R BF998RW OT-143 OT-143R OT-343R BF998 OT-143 OT-343R
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