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BF998E6327HTSA1 Infineon Technologies AG RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN
BF 998 E6327 Infineon Technologies AG MOSFET N-CH 12V 200MA SOT-143
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BF 998 Siemens Chip One Exchange 5,000 - -
BF 998 E6327 Infineon Technologies AG Avnet 27,000 €0.17 €0.08
BF 998 E6327 Infineon Technologies AG Avnet - $0.06 $0.05
BF 998 E6327 Infineon Technologies AG Avnet - - -
BF 998 E6327 Infineon Technologies AG Chip1Stop 33,006 $0.15 $0.12
BF 998 E6327 Infineon Technologies AG Avnet 4,990 €0.16 €0.09
BF998 Chip One Exchange - - -
BF998 NXP Semiconductors Farnell element14 - £0.34 £0.13
BF998 79 Chip One Exchange 2,720 - -
BF998 Siemens Chip One Exchange 2,995 - -
BF998 Philips Semiconductors Chip One Exchange 3,777 - -
BF998 Philips Semiconductors ComS.I.T. 1,135 - -
BF998-GS08 Vishay Intertechnologies Avnet - - -
BF998E-6327 Siemens Bristol Electronics 955 $0.68 $0.14
BF998E-6327 Siemens Chip One Exchange 2,350 - -
BF998E6327 Infineon Technologies AG Rochester Electronics 18,038 $0.15 $0.12
BF998E6327 Infineon Technologies AG TME Electronic Components 2,488 $0.21 $0.11
BF998E6327HTSA1 Infineon Technologies AG Newark element14 972 $0.46 $0.15
BF998E6327HTSA1 Infineon Technologies AG Avnet 45,000 $0.11 $0.10
BF998E6327HTSA1 Infineon Technologies AG Farnell element14 2,650 £0.30 £0.12
BF998E6327HTSA1 Infineon Technologies AG element14 Asia-Pacific 972 $0.55 $0.12
BF998E6327HTSA1 Infineon Technologies AG element14 Asia-Pacific 972 $0.55 $0.12
BF998E6327HTSA1 Infineon Technologies AG Chip1Stop 3,630 $0.30 $0.16
BF998E6327HTSA1 Infineon Technologies AG RS Components 650 £0.14 £0.09
BF998E6327HTSA1 Infineon Technologies AG RS Components 950 £0.27 £0.09
BF998R Siemens Chip One Exchange 17,360 - -
BF998R 98 Chip One Exchange 6,902 - -
BF998RAW tfk ComS.I.T. 2,070 - -
BF998RWBGS08 tfk ComS.I.T. 2,875 - -
BF998TAGS08 tfk ComS.I.T. 2,000 - -

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BF998 datasheet (78)

Part Manufacturer Description Type PDF
BF998 Infineon Technologies Single Non Biased; Package: PG-SOT143-4; I<sub>D</sub> (max): 30.0 mA; P<sub>tot</sub> (max): 200.0 mW; g<sub>fs</sub> (typ): 24.0 mS; G<sub>p</sub> (typ): 20.0 dB; F (typ): 1.8 dB; Original PDF
BF998 Infineon Technologies Silicon N-Channel MOSFET Tetrode Original PDF
BF998 Infineon Technologies Silicon N-Channel MOSFET Tetrode in SOT-143 package. For low noise, gain controlled input stages up to 1GHz. Original PDF
BF 998 Infineon Technologies TRANS MOSFET N-CH 12V 0.03A 4SOT-143 Original PDF
BF998 NXP Semiconductors BF998 - Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS Original PDF
BF998 Philips Semiconductors Silicon N-Channel MOSFET Tetrode Original PDF
BF998 Philips Semiconductors Silicon N-Channel Dual Gate MOS-FET Original PDF
BF998 Siemens Cross Reference Guide 1998 Original PDF
BF998 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
BF998 Siemens Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Original PDF
BF998 Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
BF998 Vishay Telefunken TRANS MOSFET N-CH 12V 0.03A 4SOT-143 Original PDF
BF998 Others Shortform Datasheet & Cross References Data Scan PDF
BF998 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BF998 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BF998 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BF998 Philips Semiconductors Silicon n-channel dual gate MOS-FET Scan PDF
BF998 Philips Semiconductors Silicon N-Channel Dual Gate MOS-FET Scan PDF
BF998,215 NXP Semiconductors Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 2 to 18 mA; I<sub>DSS</sub> min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; V<sub>DS</sub>max: 12 V; Y<sub>FS</sub> min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd Original PDF
BF998,215 NXP Semiconductors BF998 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal Original PDF

BF998 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BF998

Abstract: MGA002 MGE802 bf998 Mop Dual-Gate cfs 455 j BF998R cfs 455 f UGC469 marking code g1s
Text: Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998 ; BF998R , Marking code: MOp. MAM039 Fig.1 Simplified outline (SOT143) and symbol; BF998. g2 91 T» 2 1 Top view ►H-4 ^►l-W, s,b Marking code: MOp. Fig.2 Simplified outline (SOT143R) and symbol; BF998R. , Product specification Silicon N-channel dual-gate MOS-FETs BF998 ; BF998R LIMITING VALUES In accordance , . Fig.3 Power derating curves; BF998. MGA002


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PDF BF998; BF998R OT143 OT143R 7110fl5b OT143. OT143R. BF998 MGA002 MGE802 bf998 Mop Dual-Gate cfs 455 j BF998R cfs 455 f UGC469 marking code g1s
BF998

Abstract: No abstract text available
Text: / BF998R / BF998RW BF998A / BF998RA / BF998RAW BF998B / BF998RB / BF998RBW Min 12 ±V(BR)G1SS Type , 85011 Rev. 4, 23-Jun-99 www.vishay.de • FaxBack+1-408-970-5600 5(9) BF998 / BF998R / BF998RW_ , BF998 / BF998R / BF998RW Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , +1-408-970-5600 1 (9) BF998 / BF998R / BF998RW ViSHAY Vishay Telefunken Absolute Maximum Ratings Tamb = 25 , Number 85011 Rev. 4, 23-Jun-99 BF998 / BF998R / BF998RW Vishay Telefunken Electrical AC Characteristics


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PDF BF998/BF998R/BF998RW BF998 BF998R 23-Jun-99 BF998RW
BF908 Application Note

Abstract: BF998 bf1109 dual-gate BF909WR JBT SWITCH BF909R TRANSISTOR mosfet 9V mosfets fl philips RGG20
Text: BF998 , BF908,BF1100, (SOT143) BF998R , BF908R.BF1100R, (SOT143R) BF998V \R, BF908WR.BF1100WR, (SOT343R , also for 9Vthe BF998 , BF998R , BF998WR , BF908, BF908R and BF908WR with somewhat worse performance , . We have two types of Mosfets without integrated bias, BF908 and BF998. These Mosfets are depletion , the BF904 and BF998. The principle of the noise behaviour as a function of the source conductance of , the BF908 are higherthan that of the BF998. Due to this the cross-modulation performance after 40 dB


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PDF RNR-T45-97-F-805 12Vtypes BF998, BF908 BF1100, OT143) BF998R, BF908R BF1100R, OT143R) BF908 Application Note BF998 bf1109 dual-gate BF909WR JBT SWITCH BF909R TRANSISTOR mosfet 9V mosfets fl philips RGG20
2003 - g1 TRANSISTOR SMD MARKING CODE

Abstract: marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 BF998 g1 7 TRANSISTOR SMD MARKING CODE
Text: ) Printed-circuit board. Fig.3 Power derating curves; BF998. Fig.4 Power derating curve; BF998R. 1996 Aug , DISCRETE SEMICONDUCTORS DATA SHEET BF998 ; BF998R Silicon N-channel dual-gate MOS-FETs , television tuners and professional communications equipment. Top view handbook, halfpage BF998 ; BF998R , .1 Simplified outline (SOT143) and symbol; BF998. handbook, halfpage d 4 g2 g1 3 PINNING PIN 1 2 3 4 , code: MOp. Fig.2 Simplified outline (SOT143R) and symbol; BF998R. QUICK REFERENCE DATA SYMBOL


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PDF BF998; BF998R BF998R MAM039 BF998 g1 TRANSISTOR SMD MARKING CODE marking code ff SMD Transistor TRANSISTOR SMD MARKING CODE BS t marking code ff p SMD Transistor smd marking mop NF marking TRANSISTOR SMD c4 marking TRANSISTOR SMD nf c1 marking TRANSISTOR SMD nf c4 g1 7 TRANSISTOR SMD MARKING CODE
2001 - application BF998

Abstract: BF998R 800MHz BF998
Text: / BF998RW BF998A / BF998RA / BF998RAW BF998B / BF998RB / BF998RBW IDSS IDSS IDSS ­VG1S(OFF) ­VG2S(OFF) 4 4 9.5 1.0 , BF998 / BF998R / BF998RW Vishay Telefunken N­Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , , 23-Jun-99 www.vishay.com 1 (8) BF998 / BF998R / BF998RW Vishay Telefunken Maximum Thermal , Number 85011 Rev. 4, 23-Jun-99 BF998 / BF998R / BF998RW Vishay Telefunken Typical Characteristics (Tamb , www.vishay.com 4 (8) Document Number 85011 Rev. 4, 23-Jun-99 BF998 / BF998R / BF998RW Vishay Telefunken VDS =


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PDF BF998/BF998R/BF998RW BF998 BF998R BF998RW D-74025 23-Jun-99 application BF998 BF998R 800MHz
PHILIPS MOSFET MARKING

Abstract: BF998 TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate mcb351
Text: ■^53^31 4L1 ■APX N AMER PHILIPS/DISCRETE b?E D BF998 Silicon n-channel dual gate , MOS-FET Product specification BF998 MECHANICAL DATA Dimensions in mm Marking code BF998 = MOp m , specification - N AMER PHILIPS/DISCRETE b7E D - Silicon n-channel dual gate MOS-FET BF998 LIMITING VALUES , specification N ADER PHILIPS/DISCRETE b7E D Silicon n-channel dual gate MOS-FET BF998 STATIC CHARACTERISTICS , /DISCRETE b?E D - Silicon n-channel dual gate MOS-FET BF998 vds (v) Fig.4 Output characteristics; Vq2-s =


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PDF BF998 OT143 PHILIPS MOSFET MARKING BF998 TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate mcb351
2005 - Not Available

Abstract: No abstract text available
Text: Marking Package BF998 BF998A-GS08 or BF998B-GS08 MO SOT143 BF998A BF998A-GS08 MO SOT143 BF998B BF998B-GS08 MO SOT143 BF998R BF998RA-GS08 or BF998RB-GS08 MOR SOT143R BF998RA BF998RA-GS08 MOR SOT143R BF998RB BF998RB-GS08 MOR SOT143R BF998RW BF998RAW-GS08 or BF998RBW-GS08 WMO SOT343R BF998RAW BF998RAW-GS08 WMO SOT343R , 10.5 mA BF998B / BF998RB / BF998RBW VDS = 8 V, VG1S = 0, VG2S = 4 V BF998 / BF998R


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PDF BF998 BF998R BF998RW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R D-74025
2010 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF998 ; BF998R Silicon N-channel dual-gate MOS-FETs Product , Silicon N-channel dual-gate MOS-FETs BF998 ; BF998R FEATURES  Short channel transistor with high , diodes between gates and source. Fig.1 Simplified outline (SOT143B) and symbol; BF998. d , (SOT143R) and symbol; BF998R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX , specification Silicon N-channel dual-gate MOS-FETs BF998 ; BF998R LIMITING VALUES In accordance with


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PDF BF998; BF998R MAM039 R77/02/pp15
2003 - BF998

Abstract: bf998 mosfet tetrode application note TRANSISTOR mosfet BF998 p 1S marking SOT143 VPS05178 application BF998
Text: BF998 3 Silicon N-Channel MOSFET Tetrode 4 · Short-channel transistor with high S/C , : Electrostatic discharge sensitive device, observe handling precaution! Type BF998 Marking MOs 1 , calculation of R thJA please refer to Application Note Thermal Resistance 1 Apr-14-2003 BF998 , voltage VDS = 8 V, VG1S = 0 , ID = 20 µA 2 Apr-14-2003 BF998 Electrical Characteristics , VDS = 8 V, VG2S = 4 . -2 V , f = 800 MHz 3 Apr-14-2003 BF998 Total power dissipation Ptot


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PDF BF998 VPS05178 OT143 Apr-14-2003 BF998 bf998 mosfet tetrode application note TRANSISTOR mosfet BF998 p 1S marking SOT143 VPS05178 application BF998
2006 - BF998B

Abstract: BF998 VISHAY bf998 BF998A-GS08 BF998A BF998R BF998RAW BF998RB BF998RW BF998RA
Text: BF998 BF998A-GS08 or BF998B-GS08 MO SOT143 BF998A BF998A-GS08 MO SOT143 BF998B BF998B-GS08 MO SOT143 BF998R BF998RA-GS08 or BF998RB-GS08 MOR SOT143R BF998RA BF998RA-GS08 MOR SOT143R BF998RB BF998RB-GS08 MOR SOT143R BF998RW BF998RAW-GS08 or BF998RBW-GS08 WMO SOT343R BF998RAW BF998RAW-GS08 WMO SOT343R BF998RBW BF998RBW-GS08 , , VG1S = 0, VG2S = 4 V BF998 / BF998R / BF998RW BF998A / BF998RA / BF998RAW Drain current IDSS


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PDF BF998 BF998R BF998RW OT-143 2002/95/EC 2002/96/EC OT-143R OT-343R OT-343R BF998B BF998 VISHAY BF998A-GS08 BF998A BF998RAW BF998RB BF998RW BF998RA
2001 - BF998RW

Abstract: BF998 BF998R BF998RAW application BF998
Text: / BF998R / BF998RW BF998A / BF998RA / BF998RAW BF998B / BF998RB / BF998RBW Symbol V(BR)DS 50 nA , BF998 / BF998R / BF998RW Vishay Semiconductors N­Channel Dual Gate MOS-Fieldeffect Tetrode , www.vishay.com 1 (8) BF998 / BF998R / BF998RW Vishay Semiconductors Maximum Thermal Resistance Tamb = 25 , 85011 Rev. 4, 23-Jun-99 BF998 / BF998R / BF998RW Vishay Semiconductors Typical Characteristics (Tamb , . Output Capacitance vs. Drain Source Voltage www.vishay.com 3 (8) BF998 / BF998R / BF998RW Vishay


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PDF BF998/BF998R/BF998RW BF998R BF998 BF998RWmprove D-74025 23-Jun-99 BF998RW BF998RAW application BF998
2004 - bf998

Abstract: bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R
Text: 76 °C, BF998 , BF998R 200 TS 94 °C, BF998W Unit 200 Storage temperature Tstg -55 , Channel - soldering point 1) Rthchs Value Unit K/W BF998 , BF998R 370 BF998W 280 , power dissipation Ptot = (TS) BF998 , BF998R BF998W 220 220 mA mA 160 P tot , BF998. Silicon N_Channel MOSFET Tetrode · Short-channel transistor with high S / C quality , -13-2004 BF998. Electrical Characteristics Parameter Symbol Values Unit min. typ. max


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PDF BF998. BF998 OT143 BF998R OT143R BF998W OT343 BF998, Feb-13-2004 bf998 bf998 mosfet tetrode application note bf998w TRANSISTOR mosfet BF998 BF998R
1997 - BF 998

Abstract: BF998 BF998R 4551
Text: BF998 / BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive , TELEFUNKEN Semiconductors Rev. A2, 07-Mar-97 1 (8) BF998 / BF998R Electrical DC Characteristics Tamb , Semiconductors Rev. A2, 07-Mar-97 BF998 / BF998R Common Source S-Parameters VG2S = 4 V, Z0 = 50 W S11 , ­28.6 ­31.3 ­34.0 ­36.9 ­39.9 deg 3 (8) BF998 / BF998R Typical Characteristics (Tj = 25 , Voltage TELEFUNKEN Semiconductors Rev. A2, 07-Mar-97 BF998 / BF998R 10 ­5 1V ­10 0 ­20


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PDF BF998/BF998R BF998 BF998R D-74025 07-Mar-97 BF 998 4551
2007 - TRANSISTOR mosfet BF998

Abstract: BF998 bf998 mosfet tetrode application note BF998 marking code BF998R BFP181 BFP181R 3G1 transistor
Text: 2007-04-20 BF998. Total power dissipation Ptot = (TS) BF998 , BF998R Output characteristics ID = (V , BF998. Silicon N_Channel MOSFET Tetrode · Short-channel transistor with high S / C quality , ), BF998 , BF998R Rthchs 370 K/W 1Pb-containing 2For package may be available upon special , BF998. Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol , 2007-04-20 BF998. Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter


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PDF BF998. BF998 OT143 BF998R OT143R TRANSISTOR mosfet BF998 BF998 bf998 mosfet tetrode application note BF998 marking code BF998R BFP181 BFP181R 3G1 transistor
1996 - BF998

Abstract: MGA002 MGE802 BF998 depletion MGE814 bb405 MGE812 bf-998 dual-gate BF998R
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998 ; BF998R Silicon N-channel dual-gate MOS-FETs , BF998 ; BF998R FEATURES · Short channel transistor with high forward transfer admittance to input , .1 Simplified outline (SOT143) and symbol; BF998. d handbook, halfpage 3 CAUTION 4 g2 The , Marking code: MOp. Fig.2 Simplified outline (SOT143R) and symbol; BF998R. QUICK REFERENCE DATA , Philips Semiconductors Product specification Silicon N-channel dual-gate MOS-FETs BF998 ; BF998R


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PDF BF998; BF998R MAM039 BF998 MGA002 MGE802 BF998 depletion MGE814 bb405 MGE812 bf-998 dual-gate BF998R
2005 - bf998

Abstract: application BF998 TRANSISTOR mosfet BF998
Text: 40 3 Mar-01-2005 BF998. Total power dissipation Ptot = (TS) BF998 , BF998R Output , BF998. Silicon N_Channel MOSFET Tetrode · Short-channel transistor with high S / C quality , device, observe handling precaution! Type BF998 BF998R Parameter Package SOT143 SOT143R 1=S 1=D 2 , ), BF998 , BF998R °C Value 370 Unit K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Mar-01-2005 BF998. Electrical Characteristics Parameter DC


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PDF BF998. BF998 BF998R OT143 OT143R BF998, BF998R application BF998 TRANSISTOR mosfet BF998
ap 4606

Abstract: SFE 7.02 MHz ap 4606 ic t469 SFE 8
Text: BF998 / BF998R N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive , TELEFUNKEN Semiconductors Rev. A2, 07-Mar-97 Temic S e m i c o n d u c t o r s BF998 / BF998R type , TELEFUNKEN Semiconductors Rev. A2, 07-Mar-97 87 BF998 / BF998R Common Source S-Parameters V G2S = 4 V , , 07-Mar-97 Tem ic S e m i c o n d u c t o r s BF998 / BF998R Topical Characteristics (Tj = 25 , TELEFUNKEN Semiconductors Rev. A2, 07-Mar-97 Tem ic S e m i c o n d u c t o r s BF998 / BF998R > 1 2


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PDF BF998/BF998R BF998 BF998R 07-Mar-97 ap 4606 SFE 7.02 MHz ap 4606 ic t469 SFE 8
BF998 depletion

Abstract: BF988 bf988 sot 143 BF998
Text: viSM A Y _ BF998 / BF998R Vishay Telefunken N-Channel Dual Gate , ) BF998 / BF998R Vishay Telefunken Electrical DC Characteristics Tamb = 25°C, unless otherwise specified , DS = 0 V ds = 8 V, V q is = 0> V G2S = 4 V V G2S = V DS BF998 / BF998R BF998 A/BF988 RA BF998 B , A Y _ BF998 / BF998R Vishay Telefunken Common Source S-Parameters , +1-408-970-5600 3 (8) BF998 / BF998R Vishay Telefunken Typical Characteristics (Tamb = 2 5 ° C unless otherw ise


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PDF BF998/BF998R BF998R) BF998 BF998R D-74025 20-Jan-99 BF998 depletion BF988 bf988 sot 143
2004 - BF998

Abstract: application BF998 bf998w 3G1 transistor
Text: -29-2004 BF998. Total power dissipation Ptot = (TS) BF998 , BF998R Total power dissipation Ptot = (TS) BF998W , device, observe handling precaution! Type BF998 BF998R BF998W Maximum Ratings Parameter Package , , BF998R TS 94 °C, BF998W Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point 1) BF998 , BF998R BF998W Tstg Tch Symbol Rthchs -55 . 150 150 °C Value 370 , BF998. Silicon N_Channel MOSFET Tetrode · Short-channel transistor with high S / C quality


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PDF BF998. BF998 BF998R BF998W OT143 OT143R OT343 BF998, BF998W application BF998 3G1 transistor
2006 - bf998

Abstract: application BF998 TRANSISTOR mosfet BF998 bf-998 bf998 mosfet tetrode application note
Text: Values typ. max. Unit 3 2006-02-08 BF998. Total power dissipation P tot = (TS) BF998 , BF998R , BF998. Silicon N_Channel MOSFET Tetrode · Short-channel transistor with high S / C quality , ) sensitive device, observe handling precaution! Type BF998 BF998R Package SOT143 SOT143R 1=S 1=D 2=D 2=S Pin , drain current Gate 1/ gate 2-source current Total power dissipation TS 76 °C, BF998 , BF998R Storage , Unit V mA Thermal Resistance Parameter Channel - soldering point1), BF998 , BF998R Symbol Rthchs


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PDF BF998. BF998 BF998R OT143 OT143R BF998, application BF998 TRANSISTOR mosfet BF998 bf-998 bf998 mosfet tetrode application note
2007 - Not Available

Abstract: No abstract text available
Text: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality , TS ≤ 76 ° BF998 , BF998R C, ° C Thermal Resistance Parameter Symbol Value Unit Channel - soldering point2), BF998 , BF998R Rthchs ≤ 370 K/W 1Pb-containing 2For package , Resistance 1 2007-04-20 BF998. Electrical Characteristics at TA = 25° unless otherwise , voltage VDS = 8 V, VG1S = 0 , ID = 20 µA 2 2007-04-20 BF998. Electrical Characteristics at


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PDF BF998. BF998 OT143 BF998R OT143R
2001 - bf998

Abstract: bf998 mosfet tetrode application note VPS05178
Text: BF998 Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor with high S/C quality , ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998 , calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-10-2001 BF998 , -10-2001 BF998 Electrical Characteristics Symbol Parameter Values Unit min. typ. max , , f = 800 MHz 3 Gps Aug-10-2001 BF998 Output characteristics ID = f (VDS ) Total


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PDF BF998 VPS05178 OT143 EHT07305 EHT07306 Aug-10-2001 bf998 bf998 mosfet tetrode application note VPS05178
2004 - BF998

Abstract: No abstract text available
Text: -29-2004 BF998. Total power dissipation Ptot = (TS) BF998 , BF998R Total power dissipation Ptot = (TS) BF998W , device, observe handling precaution! Type BF998 BF998R BF998W Maximum Ratings Parameter Package , , BF998R TS 94 °C, BF998W Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point 1) BF998 , BF998R BF998W Tstg Tch Symbol Rthchs -55 . 150 150 °C Value 370 , BF998. Silicon N_Channel MOSFET Tetrode · Short-channel transistor with high S / C quality


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PDF BF998. BF998 BF998R BF998W OT143 OT143R OT343 BF998, BF998W
1999 - BF998R 800MHz

Abstract: BF998 BF998 VISHAY BF998R BF998RAW BF998RW BF998 depletion application BF998
Text: 7 14 V ±IG1SS 50 nA ±IG2SS BF998 / BF998R / BF998RW BF998A / BF998RA / BF998RAW BF998B / BF998RB / BF998RBW Symbol V(BR)DS 50 nA 18 mA IDSS 4 IDSS 4 IDSS , BF998 / BF998R / BF998RW Vishay Telefunken N­Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , +1-408-970-5600 1 (9) BF998 / BF998R / BF998RW Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless , 1.0 V Document Number 85011 Rev. 4, 23-Jun-99 BF998 / BF998R / BF998RW Vishay Telefunken


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PDF BF998/BF998R/BF998RW BF998 BF998R BF998RW D-74025 23-Jun-99 BF998R 800MHz BF998 VISHAY BF998RAW BF998 depletion application BF998
2004 - TRANSISTOR mosfet BF998

Abstract: No abstract text available
Text: -29-2004 BF998. Total power dissipation Ptot = (TS) BF998 , BF998R Total power dissipation Ptot = (TS) BF998W , device, observe handling precaution! Type BF998 BF998R BF998W Maximum Ratings Parameter Package , , BF998R TS 94 °C, BF998W Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point 1) BF998 , BF998R BF998W Tstg Tch Symbol Rthchs -55 . 150 150 °C Value 370 , BF998. Silicon N_Channel MOSFET Tetrode · Short-channel transistor with high S / C quality


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PDF BF998. BF998 BF998R BF998W OT143 OT143R OT343 BF998, BF998W TRANSISTOR mosfet BF998
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