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NXP Semiconductors
BF996S,215 MOSFET, N-CH, 0.03A, 20V, SOT-143; Transistor Polarity:N Channel; Continuous Drain Current Id:30mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):-; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power Dissipation RoHS Compliant: Yes BF996S,215 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 BF996S,215 Cut Tape 0 5 - - - - - More Info
element14 Asia-Pacific BF996S,215 Cut Tape 0 5 - $0.806 $0.527 $0.351 $0.335 More Info
Farnell element14 (2) BF996S,215 Reel 0 5 - £0.371 £0.227 £0.154 £0.151 More Info
BF996S,215 Cut Tape 0 5 - £0.371 £0.227 £0.154 £0.151 More Info

BF996S datasheet (22)

Part ECAD Model Manufacturer Description Type PDF
BF 996 S BF 996 S ECAD Model Infineon Technologies TRANS MOSFET N-CH 20V 0.03A 4SOT-143 Original PDF
BF996S BF996S ECAD Model NXP Semiconductors BF996S - N-channel dual-gate MOS-FET - CIS TYP: 2.3 pF; COS: 0.8 pF; ID: 30 mA; IDSS: 4 to 20 mA; IDSS min.: 0.8 mA; Noise figure: 1.8@800MHz dB; Note: With external bias ; Remarks: UHF ; -V(P)GS MAX: 2.5 V; VDSmax: 20 V; YFS min.: 15 mS Original PDF
BF996S BF996S ECAD Model Philips Semiconductors N-channel dual-gate MOS-FET Original PDF
BF996S BF996S ECAD Model Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Original PDF
BF996S BF996S ECAD Model Siemens Cross Reference Guide 1998 Original PDF
BF996S BF996S ECAD Model Siemens Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) Original PDF
BF996S BF996S ECAD Model Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4SOT-143 Original PDF
BF996S BF996S ECAD Model Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
BF996S BF996S ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BF996S BF996S ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BF996S BF996S ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BF996S BF996S ECAD Model Others Shortform Datasheet & Cross References Data Scan PDF
BF996S BF996S ECAD Model Philips Semiconductors SILICON N-CHANNEL DUAL GATE MOS-FET Scan PDF
BF996S BF996S ECAD Model Philips Semiconductors Silicon N-Channel Dual Gate MOS FET Scan PDF
BF996S,215 BF996S,215 ECAD Model NXP Semiconductors N-channel dual-gate MOS-FET - CIS TYP: 2.3 pF; COS: 0.8 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 4 to 20 mA; I<sub>DSS</sub> min.: 0.8 mA; Noise figure: 1.8@800MHz dB; Note: With external bias ; Remarks: UHF ; -V(P)GS MAX: 2.5 V; V<sub>DS</sub>max: 20 V; Y<sub>FS</sub> min.: 15 mS; Package: SOT143B (SOT4); Container: Tape reel smd Original PDF
BF996S,215 BF996S,215 ECAD Model NXP Semiconductors BF996 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC, SMD, 4 PIN, FET RF Small Signal Original PDF
BF996SA BF996SA ECAD Model Vishay Telefunken N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
BF996SB BF996SB ECAD Model Vishay Telefunken N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
BF996S-GS08 BF996S-GS08 ECAD Model Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4SOT-143 Original PDF
BF996ST/R BF996ST/R ECAD Model NXP Semiconductors N-channel dual-gate MOS-FET - CIS TYP: 2.3 pF; COS: 0.8 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 4 to 20 mA; I<sub>DSS</sub> min.: 0.8 mA; Noise figure: 1.8@800MHz dB; Note: With external bias ; Remarks: UHF ; -V(P)GS MAX: 2.5 V; V<sub>DS</sub>max: 20 V; Y<sub>FS</sub> min.: 15 mS Original PDF

BF996S Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BF996

Abstract: BF 996 S BF996S
Text: Tem ic Semiconductors BF996S Electrostatic sensitive device. Observe precautions for , AGC-range H F=l I- I 94 9279 I- I G2 o Gì a BF996S Marking: MH Plastic case (SOT 143) 1 = , Semiconductors Rev. A2, 03-Mar-97 79 BF996S Electrical DC Characteristics Tamb = 25°C Parameters / Test , Semiconductors Rev. A2, 03-Mar-97 Tem ic Semiconduclors BF996S LIN MAG 0.99 0.98 0.95 0.92 0.89 0.86 , Semiconductors Rev. A2, 03-Mar-97 81 BF996S Typical Characteristics (T; = 25 °C unless otherwise


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PDF BF996S BF996S 03-Mar-97 BF996 BF 996 S
2001 - BF996S

Abstract: BF996SA BF996SB
Text: dB dB dB dB VDS = 15 V, VG1S = 0, VG2S = 4 V BF996S BF996SA BF996SB IDSS IDSS IDSS , BF996S Vishay Semiconductors N­Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode , D G1 13 579 94 9279 3 4 BF996S Marking: MH Plastic case (SOT 143) 1=Source, 2 , www.vishay.com 1 (8) BF996S Vishay Semiconductors Electrical DC Characteristics Tamb = 25_C, unless , Document Number 85010 Rev. 3, 20-Jan-99 BF996S Vishay Semiconductors Common Source S­Parameters VDS


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PDF BF996S BF996S D-74025 20-Jan-99 BF996SA BF996SB
1999 - BF996S

Abstract: BF996SA BF996SB
Text: fF pF dB dB dB dB dB VDS = 15 V, VG1S = 0, VG2S = 4 V BF996S BF996SA BF996SB IDSS , BF996S Vishay Telefunken N­Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode , D G1 13 579 94 9279 3 4 BF996S Marking: MH Plastic case (SOT 143) 1=Source, 2 , www.vishay.de · FaxBack +1-408-970-5600 1 (8) BF996S Vishay Telefunken Electrical DC Characteristics , 1.8 2.6 35 1.2 Document Number 85010 Rev. 3, 20-Jan-99 BF996S Vishay Telefunken Common


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PDF BF996S BF996S D-74025 20-Jan-99 BF996SA BF996SB
1996 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product , specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against , BF996S LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL , Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S STATIC , N-channel dual-gate MOS-FET BF996S PACKAGE OUTLINE handbook, full pagewidth 3.0 2.8 0.150


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PDF BF996S OT143
Not Available

Abstract: No abstract text available
Text: V Ds = 0 V ds = 15 V, V q is = 0, V q 2s = 4 V BF996S BF996SA BF996SB bss bss bss _ V G1S , (8) BF996S_ vm m t Vishay Telefunken Electrical DC , Number 85010 Rev. 3, 20-Jan-99 www.vishay.de · FaxBack+1-408-970-5600 3 (8) BF996S_ , ) BF996S_ Vishay Telefunken VDS = 15 V, lD = 10 mA, VG2S = 4 V , Z0 = 50 Q >11 , v m rn r BF996S Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion


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PDF BF996S BF996S D-74025 20-Jan-99
2010 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF996S N-channel dual-gate MOS-FET Product specification April 1991 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S , specification N-channel dual-gate MOS-FET BF996S LIMITING VALUES In accordance with the Absolute , dual-gate MOS-FET BF996S STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL , 1991 4 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S


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PDF BF996S OT143 R77/02/pp8
2010 - BF996S

Abstract: marking code cig dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification April 1991 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S , fF dB NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S , MOS-FET BF996S STATIC CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER , Product specification N-channel dual-gate MOS-FET BF996S PACKAGE OUTLINE Plastic surface-mounted


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PDF BF996S OT143 R77/02/pp8 BF996S marking code cig dual-gate
1997 - BF996S

Abstract: GPS25 829 Tetrode
Text: BF996S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive , BF996S Marking: MH Plastic case (SOT 143) 1 = Source; 2 = Drain; 3 = Gate 2; 4 = Gate 1 Absolute , Semiconductors Rev. A1, 17-Apr-96 1 (5) BF996S Electrical DC Characteristics Tamb = 25°C Parameters , Semiconductors Rev. A1, 17-Apr-96 BF996S Common Source S-Parameters VDS = 15 V, VG2S = 4 V, ID = 5 mA, Z0 , ­12.9 ­15.7 ­18.0 ­20.4 ­22.7 ­25.0 ­27.1 ­29.4 ­31.6 ­33.9 3 (5) BF996S Dimensions in


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PDF BF996S BF996S 30the D-74025 17-Apr-96 GPS25 829 Tetrode
BF996S

Abstract: marking ANs
Text: 7110fl2ti DGbflTlb EflQ IPHIN BF996S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected , 2 4 = gate 1 Dimensions in mm Marking code BF996S = MHp S, b TOP VIEW April 1991 643 This Material Copyrighted By Its Respective Manufacturer ■711002t. Ü0bß717 117 ■PHIN BF996S J RATINGS , – TllGflEb D0bA71fl 053 Silicon n-channel dual gate MOS-FET IPHIN BF996S STATIC CHARACTERISTICS Tj = 25


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PDF 7110fl2ti BF996S OT143 BF996S marking ANs
2004 - Not Available

Abstract: No abstract text available
Text: VISHAY BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , Document Number 85010 Rev. 1.5, 20-Aug-04 www.vishay.com 1 BF996S Vishay Semiconductors Electrical , www.vishay.com 2 Document Number 85010 Rev. 1.5, 20-Aug-04 VISHAY BF996S Vishay Semiconductors , 3 BF996S Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified , Voltage www.vishay.com 4 Document Number 85010 Rev. 1.5, 20-Aug-04 VISHAY BF996S Vishay


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PDF BF996S OT-143 D-74025 20-Aug-04
2001 - Not Available

Abstract: No abstract text available
Text: = 4 V BF996S BF996SA BF996SB Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS IDSS IDSS IDSS , BF996S Vishay Telefunken N­Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode , 94 9279 13 579 3 4 12623 BF996S Marking: MH Plastic case (SOT 143) 1=Source, 2=Drain, 3 , , 20-Jan-99 www.vishay.com 1 (8) BF996S Vishay Telefunken Electrical DC Characteristics Tamb = , www.vishay.com 2 (8) Document Number 85010 Rev. 3, 20-Jan-99 BF996S Vishay Telefunken Common Source


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PDF BF996S BF996S D-74025 20-Jan-99
1998 - marking code cig

Abstract: fet dual gate sot143 Dual-Gate Mosfet BF996S dual-gate p 1S marking SOT143
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification , specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION · Protected against , Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF996S LIMITING , Product specification N-channel dual-gate MOS-FET BF996S STATIC CHARACTERISTICS Tj = 25 °C , Semiconductors Product specification N-channel dual-gate MOS-FET BF996S PACKAGE OUTLINE handbook


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PDF BF996S OT143 marking code cig fet dual gate sot143 Dual-Gate Mosfet BF996S dual-gate p 1S marking SOT143
Not Available

Abstract: No abstract text available
Text: 7 UDÖEL. QDt.a?lb EflO HIPHIN BF996S SILICON N-CHANNEL DUAL GATE MOS-FET D ep letio n ty p e fie ld -e ffe c t transistor in a plastic S O T 1 4 3 m icro m in ia tu re envelope w ith source , A D im ensions in m m Fig.1 M a rkin g code SO T143. Pinning BF996S = M Hp 1 = , BF996S J R A T IN G S L im itin g values in accordance w ith th e A bsolu te M a x im u m System , ■711DfiEb 00bfl71fl 053 IPHIN BF996S S ilico n n-channel dual gate M O S -F E T S


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PDF BF996S
2005 - Not Available

Abstract: No abstract text available
Text: BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 , , 15-Apr-05 www.vishay.com 1 BF996S Vishay Semiconductors Electrical DC Characteristics Tamb = , 85010 Rev. 1.5, 15-Apr-05 BF996S Vishay Semiconductors Common Emitter S-Parameters VDS = 15 V , -33.9 Document Number 85010 Rev. 1.5, 15-Apr-05 www.vishay.com 3 BF996S Vishay Semiconductors , -Apr-05 BF996S Vishay Semiconductors Coss ­ Output Capacitance ( pF ) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4


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PDF BF996S 2002/95/EC 2002/96/EC OT-143 08-Apr-05
2004 - BF996S

Abstract: No abstract text available
Text: BF996S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , 35 µm Cu Document Number 85010 Rev. 1.5, 30-Aug-04 www.vishay.com 1 BF996S VISHAY , 1.8 dB www.vishay.com 2 40 dB Document Number 85010 Rev. 1.5, 30-Aug-04 BF996S , -2.00 -33.9 Document Number 85010 Rev. 1.5, 30-Aug-04 www.vishay.com 3 BF996S VISHAY , Rev. 1.5, 30-Aug-04 BF996S VISHAY Vishay Semiconductors Coss ­ Output Capacitance ( pF


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PDF BF996S OT-143 D-74025 30-Aug-04 BF996S
1997 - BF996S

Abstract: temic k 153 p BF 971
Text: BF996S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive , 579 94 9279 3 4 BF996S Marking: MH Plastic case (SOT 143) 1 = Source; 2 = Drain; 3 = , -Mar-97 1 (8) BF996S Electrical DC Characteristics Tamb = 25°C Parameters / Test Conditions , dB TELEFUNKEN Semiconductors Rev. A2, 03-Mar-97 BF996S Common Source S-Parameters VDS = 15 , ) BF996S Typical Characteristics (Tj = 25_C unless otherwise specified) P tot ­ Total Power Dissipation


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PDF BF996S BF996S D-74025 03-Mar-97 temic k 153 p BF 971
2004 - BF996

Abstract: zy21
Text: VISHAY BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , Document Number 85010 Rev. 1.5, 20-Aug-04 www.vishay.com 1 BF996S Vishay Semiconductors Electrical , www.vishay.com 2 Document Number 85010 Rev. 1.5, 20-Aug-04 VISHAY BF996S Vishay Semiconductors , 3 BF996S Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified , Voltage www.vishay.com 4 Document Number 85010 Rev. 1.5, 20-Aug-04 VISHAY BF996S Vishay


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PDF BF996S OT-143 D-74025 20-Aug-04 BF996 zy21
FM02

Abstract: marking ANs bs 159 FET MARKING CODE BF996S BF996
Text: L3E D ■1^53^24 D074311 MES HSIC3 NAPC/PHILIPS SEHICON]) BF996S FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners. The device is also suitable for use in , 4 = gate 1 Dimensions in mm Marking code BF996S = M Hp 0,150 0,090 ' V. u 10° max / max -


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PDF D074311 BF996S OT143 FM02 marking ANs bs 159 FET MARKING CODE BF996S BF996
BF996S

Abstract: free transistor bs 200 marking ANs marking BS mosfet
Text: m bbâ3^31 QÜBM75Q 4ß2 HAPX N AMER PHILIPS/DISCRETE b7E D BF996S J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope , in mm Fig.1 SOT 143. Marking code BF996S = MHp Pinning max 0>1 «■•»»-0,1 U—-Ezj—J , – bbS3T31 G024751 311 «APX BF996S I I N AMER PHILIPS/DISCRETE b?E » RATINGS Limiting values in , 0 DYNAMIC CHARACTERISTICS Measuring conditions (common source): Id = 10 mA; Vqs : BF996S Â


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PDF BM75Q BF996S OT143 BF996S free transistor bs 200 marking ANs marking BS mosfet
2005 - Not Available

Abstract: No abstract text available
Text: BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 , , 15-Apr-05 www.vishay.com 1 BF996S Vishay Semiconductors Electrical DC Characteristics Tamb = , 85010 Rev. 1.5, 15-Apr-05 BF996S Vishay Semiconductors Common Emitter S-Parameters VDS = 15 V , -33.9 Document Number 85010 Rev. 1.5, 15-Apr-05 www.vishay.com 3 BF996S Vishay Semiconductors , -Apr-05 BF996S Vishay Semiconductors Coss ­ Output Capacitance ( pF ) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4


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PDF BF996S 2002/95/EC 2002/96/EC OT-143 D-74025 15-Apr-05
marking code 11G1

Abstract: No abstract text available
Text: b b S B ' m 0DE4750 462 « A P X N AMER PHILIPS/DISCRETE BF996S b7E » y v . SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners , Dimensions in mm Fig. 1 SOT 143. Marking code Pinning BF996S = MHp 1 2 3 4 = = = = , - G 3 — «) ■TOP VIEW A p ril 1991 643 ■bbS3^31 DQ2M751 31^ H A P X BF996S


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PDF 0DE4750 BF996S OT143 marking code 11G1
Not Available

Abstract: No abstract text available
Text: BF996S _ J SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected , . Marking code BF996S = MHp Pinning 1 2 3 4 = = = = source drain gate 2 gate 1 0,150 U g2 - +m s, b TOP VIEW 'N / April 1991 221 BF996S J V RATINGS Limiting , . Device mounted on a ceramic substrate of 8 mm x 10 mm x 0.7 mm. 222 April 1991 BF996S Silicon


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PDF BF996S OT143
fet MARKING MHp

Abstract: sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S
Text: philips international 5bE D BF996S 71iaöSb OOBWö ötö mphin FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATASHEET T -35-27 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended for UHF applications in television tuners. The device is also suitable for use in , 4 = gate 1 10° max y Dimensions in mm Marking code BF996S = MHp 0,150 0,090 / t s, b -1,1


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PDF BF996S OT143 OT143. fet MARKING MHp sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S
2011 - 40673 MOSFET

Abstract: MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK107F 3SK77BL 3N200 MOSFET
Text: MOSFET Item Number Part Number Manufacturer V(BR)OSS M BF964 BF966 BF966 BF966 3SK107E 3SK107F 3SK107G BF996S BF996S BF996S 3SK73 3SK77BL 3SK77GR 3SK77Y 3SK78 3SK136 3SK81 BF992 BF992 BF992 BF982 BF982 3SK182 BF993 BF993 BF994S BF994S BF994S ·3SK80 BF964S (A) BF964S (A) SD303DC SD306DE BF963 BF963 3N187 3N200 40673 40673 40673 40820 40821 40821 3N140 3N141 3N159 3N159 3N159 Telefunken PhilipsElec AmperexElec Telefunken Sanyo Elect Sanyo Elect Sanyo Elect PhilipsElec Telefunken Siemens Akt


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PDF BF964 BF966 3SK107E 3SK107F 3SK107G BF996S 40673 MOSFET MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET
2005 - BF996S

Abstract: No abstract text available
Text: BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 , 35 µm Cu Document Number 85010 Rev. 1.5, 08-Dec-05 www.vishay.com 1 BF996S Vishay , www.vishay.com 2 40 dB Document Number 85010 Rev. 1.5, 08-Dec-05 BF996S Vishay Semiconductors , Document Number 85010 Rev. 1.5, 08-Dec-05 deg deg deg www.vishay.com 3 BF996S Vishay , -Dec-05 BF996S Vishay Semiconductors Coss ­ Output Capacitance (pF) 2.0 20 1.8 1.6 16 1.4 Im


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PDF BF996S 2002/95/EC 2002/96/EC OT-143 08-Apr-05 BF996S
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