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BF961 datasheet (17)

Part Manufacturer Description Type PDF
BF961 Siemens Cross Reference Guide 1998 Original PDF
BF961 Temic Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
BF961 Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Original PDF
BF961 Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4TO-50 Original PDF
BF961 Others Shortform Transistor PDF Datasheet Scan PDF
BF961 Others Shortform Datasheet & Cross References Data Scan PDF
BF961 Others Cross Reference Datasheet Scan PDF
BF961 Others Diode, Transistor, Thyristor Datasheets and more Scan PDF
BF961 Others Diode, Transistor, Thyristor Datasheets and more Scan PDF
BF961 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BF961 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BF961 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BF961 Philips Components Philips Data Book Scan Scan PDF
BF961A Vishay Intertechnology N-Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode Original PDF
BF961A Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4TO-50 Original PDF
BF961B Vishay Intertechnology N-Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode Original PDF
BF961B Vishay Telefunken TRANS MOSFET N-CH 20V 0.03A 4TO-50 Original PDF

BF961 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - BF961

Abstract: BF961A BF961B 100MHz-500MHz
Text: IDSS IDSS IDSS Unit V ±IG1SS BF961 BF961A BF961B Max. 4 4 9.5 Electrical AC , BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device , G2 D 4 2 G1 94 9307 96 12647 1 BF961 Marking: BF961 Plastic case (TO 50) 1 , Cu TELEFUNKEN Semiconductors Rev. A2, 16-Jan-97 1 (7) BF961 Electrical DC Characteristics , 2.5 dB TELEFUNKEN Semiconductors Rev. A2, 16-Jan-97 BF961 Typical Characteristics (Tj = 25


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PDF BF961 BF961 D-74025 16-Jan-97 BF961A BF961B 100MHz-500MHz
2001 - bf961

Abstract: No abstract text available
Text: = 15 V, VG1S = 0, VG2S = 4 V BF961 BF961A BF961B Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS , BF961 Vishay Telefunken N­Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode , feedback capacitance D Low input capacitance G2 G1 D 1 BF961 Marking: BF961 Plastic case (TO 50) 1 , Document Number 85002 Rev. 3, 20-Jan-99 www.vishay.com 1 (7) BF961 Vishay Telefunken Electrical DC , 2.5 www.vishay.com 2 (7) Document Number 85002 Rev. 3, 20-Jan-99 BF961 Vishay Telefunken


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PDF BF961 BF961 D-74025 20-Jan-99
BF961

Abstract: bf-961
Text: +1-408-970-5600 1 (7) Vishay Telefunken Electrical DC , is ± !g is s ± V G2 S Ü G 2SS V d s = 15 V, V q = 0, V q2s = 4 V BF961 BF961A , +1-408-970-5600 3 (7) BF961_ Vishay Telefunken 10 5 VISH&Y o w -10 a -20 -25 , Number 85002 Rev. 3, 20-Jan-99 www.vishay.de · FaxBack+1-408-970-5600 5 (7) BF961_ Vishay , ViSH A Y BF961 Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion


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PDF BF961 BF961 D-74025 20-Jan-99 bf-961
2005 - TO50 package

Abstract: BF961
Text: Weight: approx. 124 mg Marking: BF961 Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 Parts Table Part BF961 BF961A BF961B Ordering Ccode BF961A or BF961B BF961A BF961B BF961 BF961 BF961 Marking , VG1S(OFF) - VG2S(OFF) 4 4 9.5 BF961A BF961B Gate 1 - source cut-off voltage Gate 2 - source cut-off , BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode , -Apr-05 www.vishay.com 1 BF961 Vishay Semiconductors Electrical DC Characteristics Tamb = 25 °C, unless otherwise


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PDF BF961 2002/95/EC 2002/96/EC BF961 BF961A BF961B D-74025 15-Apr-05 TO50 package
BF961

Abstract: BF961S bf-961 agos
Text: 2 S S Ü G 1SS ÜG2SS BF961 BF961A BF961B Id Id ss ss Id s s - V G lS(OFF) - V g 2S , Temic S e m i c o n d u c t o r s BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode , capacitance Low input capacitance G2 Q Gl Q BF961 Marking: BF961 Plastic case (TO 50) 1 = Drain, 2 = , , 16-Jan-97 39 BF961 Electrical DC Characteristics Tamb = 25°C, unless otherwise specified , -Jan-97 Te m ic S e m i c o n d u c t o r s BF961 Typical Characteristics (T, = 25 °C unless otherwise


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PDF BF961 BF961 16-Jan-97 BF961S bf-961 agos
2004 - BF961

Abstract: TO50 package BF961A BF961B
Text: Case: TO-50 Plastic case Weight: approx. 124 mg Marking: BF961 Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 Parts Table Part Ordering Ccode Marking Package BF961 BF961A or BF961B BF961 TO50 BF961A BF961A BF961 TO50 BF961B BF961B BF961 TO50 , IDSS 20 mA 4 10.5 mA IDSS BF961B 4 IDSS BF961A 9.5 20 mA Gate , BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3


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PDF BF961 BF961A BF961B BF961s D-74025 25-Nov-04 BF961 TO50 package BF961B
1999 - BF961

Abstract: BF961A BF961B
Text: V BF961 BF961A BF961B IDSS IDSS IDSS 4 4 9.5 Electrical AC Characteristics VDS = , BF961 Vishay Telefunken N­Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode , input capacitance 3 G2 D 4 2 G1 94 9307 96 12647 1 BF961 Marking: BF961 , . 3, 20-Jan-99 Value 450 www.vishay.de · FaxBack +1-408-970-5600 1 (7) BF961 Vishay , 15 3.7 1.6 25 1.6 20 50 1.8 2.5 Document Number 85002 Rev. 3, 20-Jan-99 BF961


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PDF BF961 BF961 D-74025 20-Jan-99 BF961A BF961B
2006 - BF961

Abstract: BF961A BF961B TO50 package bf-961
Text: Case: TO-50 Plastic case Weight: approx. 124 mg Marking: BF961 Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 Parts Table Part Ordering Ccode Marking Package BF961 BF961A or BF961B BF961 TO50 BF961A BF961A BF961 TO50 BF961B BF961B BF961 TO50 , 10.5 mA IDSS BF961B 4 IDSS BF961A 9.5 20 mA Gate 1 - source cut-off , BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3


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PDF BF961 2002/95/EC 2002/96/EC 08-Apr-05 BF961 BF961A BF961B TO50 package bf-961
2004 - BF961

Abstract: No abstract text available
Text: VISHAY BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , -50 Plastic case Weight: approx. 124 mg Marking: BF961 Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 , ) mm3 plated with 35 µm Cu Document Number 85002 Rev. 1.5, 03-Sep-04 www.vishay.com 1 BF961 , Document Number 85002 Rev. 1.5, 03-Sep-04 VISHAY BF961 Vishay Semiconductors 24 22 20 18 16 14 , Admittance Document Number 85002 Rev. 1.5, 03-Sep-04 www.vishay.com 3 BF961 Vishay Semiconductors


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PDF BF961 BF961 D-74025 03-Sep-04
1997 - BF961

Abstract: BF961A BF961B
Text: ±IG2SS IDSS IDSS IDSS Unit V ±IG1SS BF961 BF961A BF961B Max. 4 4 9.5 Electrical , BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device , 4 1 BF961 Marking: BF961 Plastic case (TO 50) 1 Drain, 2 Source, 3 Gate 1, 4 Gate 2 + , Cu TELEFUNKEN Semiconductors Rev. A2, 16-Jan-97 1 (6) BF961 Electrical DC Characteristics , -Jan-97 BF961 Typical Characteristics (Tj = 25_C unless otherwise specified) Y21S ­ Forward Transadmittance


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PDF BF961 BF961 D-74025 16-Jan-97 BF961A BF961B
2001 - BF961

Abstract: BF961A BF961B
Text: Unit mS pF pF fF pF dB dB dB VDS = 15 V, VG1S = 0, VG2S = 4 V BF961 BF961A BF961B , BF961 Vishay Semiconductors N­Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode , input capacitance 3 G2 D 4 2 G1 94 9307 96 12647 1 BF961 Marking: BF961 , . 3, 20-Jan-99 Value 450 www.vishay.com 1 (7) BF961 Vishay Semiconductors Electrical DC , Number 85002 Rev. 3, 20-Jan-99 BF961 Vishay Semiconductors Typical Characteristics (Tamb = 25


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PDF BF961 BF961 D-74025 20-Jan-99 BF961A BF961B
2004 - bf-961

Abstract: No abstract text available
Text: VISHAY BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , -50 Plastic case Weight: approx. 124 mg Marking: BF961 Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 , ) mm3 plated with 35 µm Cu Document Number 85002 Rev. 1.5, 20-Aug-04 www.vishay.com 1 BF961 , Document Number 85002 Rev. 1.5, 20-Aug-04 VISHAY BF961 Vishay Semiconductors 24 22 20 18 16 14 , Input Admittance Document Number 85002 Rev. 1.5, 20-Aug-04 www.vishay.com 3 BF961 Vishay


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PDF BF961 BF961 D-74025 20-Aug-04 bf-961
BF961

Abstract: 3300-MHz BF961A BF961B
Text: IDSS IDSS IDSS Unit V ±IG1SS BF961 BF961A BF961B Max. 4 4 9.5 Electrical AC , BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device , G2 D 4 2 G1 94 9307 96 12647 1 BF961 Marking: BF961 Plastic case (TO 50) 1 , Cu TELEFUNKEN Semiconductors Rev. A2, 16-Jan-97 1 (7) BF961 Electrical DC Characteristics , 2.5 dB TELEFUNKEN Semiconductors Rev. A2, 16-Jan-97 BF961 Typical Characteristics (Tj = 25


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PDF BF961 BF961 D-74025 16-Jan-97 3300-MHz BF961A BF961B
2004 - BF961

Abstract: No abstract text available
Text: VISHAY BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion , -50 Plastic case Weight: approx. 124 mg Marking: BF961 Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 , ) mm3 plated with 35 µm Cu Document Number 85002 Rev. 1.5, 20-Aug-04 www.vishay.com 1 BF961 , Document Number 85002 Rev. 1.5, 20-Aug-04 VISHAY BF961 Vishay Semiconductors 24 22 20 18 16 14 , Input Admittance Document Number 85002 Rev. 1.5, 20-Aug-04 www.vishay.com 3 BF961 Vishay


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PDF BF961 BF961 D-74025 20-Aug-04
BF961

Abstract: No abstract text available
Text: 15V, VGis = 0, VG2S = 4 V BF961 BF961A BF961B toss toss toss VDS = 15V, VG2s = 4V, !D = , <£e.mi-Condu.cioi ZPioducti, fine. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF961 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Input- and mixer stages especially for FM- and VHP TV-tuners up , input capacitance -OD BF961 Marking: BF961 Plastic case (TO 50) 1-Drain, 2=Source, 3=Gate 1, 4


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PDF BF961 BF961 sourceF961A BF961B
1995 - BF961

Abstract: BF961A BF 961 Book Microelectronic bf-961 Marking 9282 marking GG
Text: input capacitance 3 2 4 1 BF961 Marking Plastic case (XTO 50) 1+Drain, 2+Source, 3+Gate 1, 4+Gate 2 BF961 Marking Plastic case (XTO 50) 1+Drain, 2+Source, 3+Gate 1, 4+Gate 2 , IG2SS 100 nA 10 20 mA Drain current VDS = 15 V, VG1S = 0 V, VG2S = 4 V BF961A B


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PDF BF961 D-74025 BF961A BF 961 Book Microelectronic bf-961 Marking 9282 marking GG
1995 - BF966

Abstract: BF961
Text: capacitance 3 2 4 1 BF961 Marking Plastic case (XTO 50) 1+Drain, 2+Source, 3+Gate 1, 4+Gate 2 BF961 Marking Plastic case (XTO 50) 1+Drain, 2+Source, 3+Gate 1, 4+Gate 2 Absolute Maximum Ratings


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PDF BF961 D-74025 BF966
1995 - BF964

Abstract: BF961 bf-961 964s
Text: capacitance 3 2 4 1 BF961 Marking Plastic case (XTO 50) 1+Drain, 2+Source, 3+Gate 1, 4+Gate 2 BF961 Marking Plastic case (XTO 50) 1+Drain, 2+Source, 3+Gate 1, 4+Gate 2 Absolute Maximum Ratings


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PDF BF961 D-74025 BF964 bf-961 964s
BB509

Abstract: Varicap bb112 elektor receiver ELEKTOR PE1GIC general coverage receiver sfr455j varicap bb509 ssb receiver elektor NE602 application note TCA440 12V Fixed-Voltage Regulator 7812
Text: C88 47k 47k C102 5V/0V R57 R56 C87 47k 0V 0V/5V BF961 G2 R64 C91 , BA479S 9V X1 1 0µH22 C17 10p P2 50k 0µH33 BF961 R11 C16 BB112 100n L13 BF961 2V9 0V R6 C13 330 330 C11 2V1 220p L11 L9 D13 D11 R4 , 5400 ­ 13200 kHz 13200 ­ 32000 kHz Preselector The active element is a type BF961 dual-gate


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PDF 12-key BB509 Varicap bb112 elektor receiver ELEKTOR PE1GIC general coverage receiver sfr455j varicap bb509 ssb receiver elektor NE602 application note TCA440 12V Fixed-Voltage Regulator 7812
BF963

Abstract: BF544 BF987 BF930 triode sot23 BF964S cly5 CFY30 BF965 BF998
Text: . 200 200 200 200 200 200 200 200 200 1 1 1 1 1 1 1 1 1 BF963 BF964S BF961 BF966S BF965 BF988 -


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PDF BF930 BF993 BF994S BF995 BF996S BF997 BF998 BF1005 BF1012 BF543 BF963 BF544 BF987 triode sot23 BF964S cly5 CFY30 BF965
s525

Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T
Text: Tem ic Alphanumeric Index T ype . BF569 BF579 BF961 BF964S BF966S BF970 BF979 BF988 BF994S BF995 BF996S BF998 10, 353 10. 357 8, 39 8, 45 8. 52 10, 361 10, 365 8, 59 8, 66 8, 73 8, 79 8, 86 Semiconductors General Information Type. BFP183T . . . Type . 9, 206 BFR90A BFR91 9, 243 9, 250 Type. S593T S594T S595T S822T S849T S852T 8, 105 8, 112 8, 119 9, 338 8, 126 9, 344 BFP280T . . . 9, 209 BFP67 BFP81 BFP92A BFP93A BFQ65 BFQ67 BFQ81 9, 163 9, 173 9, 182 9


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PDF BF569 BF579 BF961 BF964S BF966S BF970 BF979 BF988 BF994S BF995 s525 s918 bfr96ts S858TA3 BF-970 BFP183T
buz90af

Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Text: www.i-t.su ¡nfo@i-t.su MHTEPTEKC Ten: (495) 739-09-95, 644-41-29 electronics TpaH3MCTopbi N-FET copTMpoBKa no HanpflweHMro UDS Kofl: Vd8! Ids Rds(on) Pmax Kopnyc [B] [A] [Om] [Br] 2SK192 18 0,003 - - DPAK 2SK212 20 0,0006 - 0,2 DPAK 2SK241 20 0,0015 - - DPAK BF960 20 0,025 - 0,2 T050 BF961 20 0,03 - - T050 BF964 20 0,03 - - T050 BF966S 20 0,03 - 0,2 T050 BF981 20 0,02 - - SOT103 BF996 20 0,03 - - SOT14 2N3819 25 0,02 - 0,36 T092 2N5457 25 0,001 - 0,35 T092 2SK125 25 0,1 - 0,3


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PDF 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 OT103 BF996 buz90af P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
CFY19

Abstract: CFY19-22 CFY19-18 BF995 BF963 CFY10 CFY65-14 BF965 BF964S BF961
Text: SIEMENS AKTIENGESELLSCHAF bOE J> ÔE35bOS DD45427 40=1 «SIE6 Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors Maximum Ratings Characteristics (T =25°C) V DS V ^DS niA Pt mW G dlf NF dB at fDs V 'D mA / MHz £fs mS Style Lead Code SOT Equiv. BF961 20 30 200 23 1.1 15 10 200 17 XPLAST 45 BF995 BF963 20 50 200 25 1.5 15 10 200 25 XPLAST 45 BF993 BF964S 20 30 200 25 1.0 15 10 200 18 XPLAST 45 BF994S BF965 20


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PDF E35bOS DD45427 BF961 BF995 BF963 BF993 BF964S BF994S BF965 BF997 CFY19 CFY19-22 CFY19-18 BF995 CFY10 CFY65-14
CFY19

Abstract: CFY19-18 bf963 CFY10 CFY76-08 bf544 bf987 CFY67-08 CFY19-22 BF964S
Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors Type M axim um Ratings Characteristics (Tfl=25°C) Case Lead ^D S SOT Equiv. V (Tetrode) BF961 BF963 BF964S BF965 BF966S BF988 (Triode) BF544 (Triode) BF987 (Triode) 20 20 20 20 20 12 20 20 A >s 30 50 30 30 30 30 30 30 raA Pt mW G DS dfi 23 25 25 25 18 20 22 25 NF dB 1 .1 a` ^D S ' d V 15 15 15 15 15 8 10 10 mA 10 / MHz 200 200


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PDF BF961 BF963 BF964S BF965 BF966S BF988 BF544 BF987 T092D O-92b CFY19 CFY19-18 CFY10 CFY76-08 bf544 bf987 CFY67-08 CFY19-22
1998 - BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 1N4148 SOD-123 2N2907 SOT-23 2n2222 smd
Text: SOD-123 BF240 BF241 BF414 BF420 BF421 BF422 BF423 BF506 BF544 BF763 BF959 BF961 BF963


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PDF OD-123 1N4001 1N4002 1N4003 1N4004 1N4148 BF963 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 1N4148 SOD-123 2N2907 SOT-23 2n2222 smd
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