BF909R |
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NXP Semiconductors
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N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS |
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BF909R |
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Philips Semiconductors
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N-Channel Dual Gate MOS-FET |
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BF909R |
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Philips Semiconductors
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N-channel dual gate MOS-FETs |
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Scan |
PDF
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BF909R,215 |
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NXP Semiconductors
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N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
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Original |
PDF
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BF909R,235 |
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NXP Semiconductors
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N-channel dual gate MOS-FETs - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
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Original |
PDF
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