BF904WR |
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NXP Semiconductors
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BF904WR - N-channel dual-gate MOS-FET - CIS TYP: 2.2 pF; COS: 1.3 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 22 mS |
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BF904WR |
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Philips Semiconductors
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N-Channel Dual-Gate MOS-FET |
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BF904WR |
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Philips Semiconductors
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N-channel dual-gate MOS-FET |
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BF904WR,115 |
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NXP Semiconductors
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BF904 - TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-4, FET RF Small Signal |
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BF904WR,115 |
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NXP Semiconductors
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N-channel dual-gate MOS-FET - CIS TYP: 2.2 pF; COS: 1.3 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 22 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
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BF904WR,135 |
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NXP Semiconductors
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BF904WR - N-channel dual-gate MOS-FET, SOT343R Package, Standard Marking, Reel Pack, SMD, Large |
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BF904WR,135 |
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NXP Semiconductors
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N-channel dual-gate MOS-FET - CIS TYP: 2.2 pF; COS: 1.3 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 22 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
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BF904WRT/R |
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NXP Semiconductors
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N-channel dual-gate MOS-FET - CIS TYP: 2.2 pF; COS: 1.3 pF; ID: 30 mA; IDSS: 8 to 13 mA; IDSS min.: 1.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 22 mS |
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BF904WRTR |
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Philips Semiconductors
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N-channel dual gate MOS-FET |
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BF904WRT/R |
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
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