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Nexperia
BF823,215 Trans GP BJT PNP 250V 0.05A 3-Pin TO-236AB T/R (Alt: BF823,215) BF823,215 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet (3) BF823,215 Tape and Reel 129,000 5 Weeks, 1 Days 3,000 - - - - €0.081 More Info
BF823,215 Reel 0 4 Weeks 18,000 - - - - - More Info
BF823,215 Tape and Reel 0 4 Weeks 24,000 - - - - - More Info
New Advantage Corporation BF823,215 30,000 30,000 - - - - - More Info
Nexperia
BF823 TRANSISTOR, PNP, -250V, 60MHZ, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-250V; Transition Frequency ft:60MHz; Power Dissipation Pd:250mW; DC Collector Current:-50mA; DC Current Gain hFE:50hFE; Transistor RoHS Compliant: Yes BF823 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark element14 BF823 Cut Tape 0 5 - - - - - More Info
element14 Asia-Pacific BF823 0 1 $0.418 $0.342 $0.157 $0.078 $0.078 More Info
Farnell element14 (2) BF823 0 5 - £0.255 £0.101 £0.056 £0.047 More Info
BF823 0 5 - £0.255 £0.101 £0.056 £0.047 More Info
NXP Semiconductors
BF823T/R BF823T/R ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics BF823T/R 2,800 - - - - - More Info
Nexperia
BF823.215 Transistor: PNP; bipolar; 250V; 50mA; 250mW; SOT23 BF823.215 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Transfer Multisort Elektronik BF823.215 2,670 3,000 - $0.15578 $0.05909 $0.05219 $0.04696 More Info
Motorola Semiconductor Products
BF823 BF823 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. BF823 12,000 - - - - - More Info

BF823 datasheet (17)

Part ECAD Model Manufacturer Description Type PDF
BF823 BF823 ECAD Model Continental Device India Surface mount Si-Epitaxial PlanarTransistors Original PDF
BF823 BF823 ECAD Model Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
BF823 BF823 ECAD Model General Semiconductor Small Signal Transistors (PNP) Original PDF
BF823 BF823 ECAD Model Kexin PNP High-Voltage Transistors Original PDF
BF823 BF823 ECAD Model NXP Semiconductors BF823 - PNP high voltage transistors - Complement: BF822 ; fT min: 60 MHz; hFE max:>50 ; hFE min: 50 ; IC max: 50 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 250 V Original PDF
BF823 BF823 ECAD Model Philips Semiconductors PNP High-Voltage Transistor Original PDF
BF823 BF823 ECAD Model Philips Semiconductors Silicon Epitaxial Transistor Original PDF
BF823 BF823 ECAD Model Rectron Semiconductor Original PDF
BF823 BF823 ECAD Model TY Semiconductor PNP High-Voltage Transistors - SOT-23 Original PDF
BF823 BF823 ECAD Model Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan PDF
BF823 BF823 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
BF823 BF823 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BF823,215 BF823,215 ECAD Model NXP Semiconductors PNP high voltage transistors - Complement: BF822 ; fT min: 60 MHz; hFE max:&gt;50 ; hFE min: 50 ; I<sub>C</sub> max: 50 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 250 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
BF823S BF823S ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BF823T/R BF823T/R ECAD Model NXP Semiconductors PNP high voltage transistors - Complement: BF822 ; fT min: 60 MHz; hFE max:&gt;50 ; hFE min: 50 ; I<sub>C</sub> max: 50 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 250 V Original PDF
BF823TR BF823TR ECAD Model Philips Semiconductors PNP high-voltage transistor Original PDF
BF823T/R BF823T/R ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

BF823 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N-P transistors Marking BF821 = IW BF823 = , mA; -VCe = 10 V BF823 250 V 250 V - V 100 mA 250 mW °C 150 hFE > 50 Qe < 1,6 pF fx > 60 M Hz 23033=14 Q00D7Û4 432 71 BF821 BF823 CDÎL RATINGS , ; —Vce = 10 V Feedback capacitance at f = 1 MHz Ic = 0; -V ce = 30 V 5 50 100 BF823 250 V 250 , dissipation up to Tamb = 25 °C Storage temperature Junction temperature K/W 6F821 BF823


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PDF BF821 BF823 6F821 G0G07flS
Not Available

Abstract: No abstract text available
Text: 'IL BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N -P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0. 2.8 0.48 TT3B Pin , . BF821_ BF823 300 250 V _ 250 V - V 300 100 mA 250 mW °C 150 hFE > 50 Cre < 1/6 pF fr > 60 Mz H BF821 BF823 RATINGS (at T a = 25°C unless otherwise , c = 10 mA; —Vce = 10 V Feedback capacitance at f = 1 MHz i c = 0; -V ce = 30 V BF823 250 V


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PDF BF821 BF823
1Y SOT-23

Abstract: No abstract text available
Text: BF821, BF823 PNP Silicon Epitaxial Planar Transistors especially suited for application in class-B video output stages of TV receivers and monitors. A s complementary types, the NPN transistors BF820 and , Storage Temperature Range ' >Device on fiberglass substrate, see layout BF821 BF823 BF823 BF821 -V c b o , V V V V mA mA mW CC Plot Tj TS rc 104 ITT INTERMETALL BF821, BF823 , fiberglass substrate, see layout BF821 BF823 BF823 BF821 -V(BR)CBO -V(BR)CBO -V(BR)CEO Min. 300 250 250


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PDF BF821, BF823 BF820 BF822 BF821 OT-23 BF821 BF823 1Y SOT-23
Not Available

Abstract: No abstract text available
Text: current (max. 50 mA) · High voltage (max. 300 V). BF821 ; BF823 PINNING PIN 1 2 3 base emitter , BF821 BF823 2 MARKING CODE 1Wp 1Yp 1 2 A 4AM 266 Top View Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL VcBO PARAMETER collector-base voltage BF821 BF823 collector-emitter voltage BF821 BF823 peak collector current total power dissipation DC current gain feedback , (IEC 134). BF821 ; BF823 SYMBOL VcB O PARAMETER collector-base voltage BF821 BF823


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PDF BF821 BF823 BF820, BF822. BF821 BF823
transistors 10 KW

Abstract: BF821 BF823
Text: Transys Electronics L I M I T E D SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P­N­P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL , CE0 ­V CER ­I CM Ptot Tj BF821 max. 300 max. - max. 300 max. max. max. BF823 250 V , MHz BF821 BF823 RATINGS (at TA = 25°C unless otherwise specified) Limiting values BF821 , ; -VCE = 10 V Feedback capacitance at f = 1 MHz IC = 0; ­VCE = 30 V BF823 5 50 100 250 ­55


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PDF OT-23 BF821 BF823 transistors 10 KW BF821 BF823
2004 - BF820

Abstract: BF821 BF822 BF823
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF821; BF823 PNP high-voltage transistors Product , PNP high-voltage transistors BF821; BF823 FEATURES PINNING · Low current (max. 50 mA , CODE(1) TYPE NUMBER BF821 BF823 2 1 1W* 1Y* Top view 2 MAM256 Note 1. * = p , - plastic surface mounted package; 3 leads SOT23 BF823 - plastic surface mounted , high-voltage transistors BF821; BF823 LIMITING VALUES In accordance with the Absolute Maximum Rating


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PDF BF821; BF823 BF820, BF822. BF821 MAM256 SCA76 BF820 BF821 BF822 BF823
2009 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF821; BF823 PNP high-voltage transistors Product data sheet , transistors BF821; BF823 PINNING FEATURES • Low current (max. 50 mA) PIN • High voltage (max , ) TYPE NUMBER BF821 BF823 2 1 1W* 1Y* Top view 2 MAM256 Note 1. * = p : Made in Hong , surface mounted package; 3 leads SOT23 BF823 − plastic surface mounted package; 3 leads , BF821; BF823 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).


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PDF BF821; BF823 BF820, BF822. BF821 MAM256 R75/04/pp6
2001 - BF821

Abstract: BF823 transistors 10 KW
Text: -23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P­N­P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE , CB0 ­V CE0 ­V CER ­I CM Ptot Tj BF821 max. 300 max. - max. 300 max. max. max. BF823 , > 60 MHz Page 1 of 3 BF821 BF823 RATINGS (at TA = 25°C unless otherwise specified , Device India Limited BF823 5 50 100 250 ­55 to +150 150 500 max. mW °C °C KW


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PDF OT-23 BF821 BF823 C-120 BF821 BF823 transistors 10 KW
Not Available

Abstract: No abstract text available
Text: ■bb53^31 D0S4704 STS B A P X N AMER PHILIPS/DISCRETE BF821 BF823 b?E D J V , Collector-base voltage (open emitter) BF823 - v CBO max. 300 250 V Collector-emitter voltage , BF821 BF823 L N AMER PHILIPS/DISCRETE b?E D RATINGS Limiting values in accordance with the , (open base) -V c B O BF823 300 max. 250 V - 250 V Collector-emitter voltage (RBE , * Rth j-a CHARACTERISTICS Tj = 25 °C unless otherwise specified 3F821 BF823 Collector


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PDF D0S4704 BF821 BF823 BF820, BF822
AXm marking

Abstract: No abstract text available
Text: BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic , Dimensions in mm -V c B O -V CEO - V CER -· cm BF823 250 250 m axm axmax. max. max. max. > < > 300 , VIEW September 1994 531 BF821 BF823 R A T IN G S Limiting values in accordance with the , = BF823 250 V 250 V - v CB0 max. max. max. max. max. max. max. 300 - v CEO " V CER , 150 °C max. 150 °C ^ th j-a = 50U K/W 25 °C unless otherwise specified BF821 BF823 10


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PDF BF821 BF823 BF820, BF823 AXm marking
BF823

Abstract: BF820 BF821 BF822 PNP Epitaxial Silicon Transistor sot-23
Text: BF821, BF823 Small Signal Transistors (PNP) FEATURES PNP Silicon Epitaxial Planar Transistors , code BF821 = 1W BF823 = 1Y Dimensions in inches and (millimeters) Pin configuration 1 = Base , BF821 BF823 ­VCBO ­VCBO 300 250 V V Collector-Emitter Voltage BF823 ­VCEO 250 , BF821, BF823 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise , = 0 BF821 BF823 ­V(BR)CBO ­V(BR)CBO 300 250 ­ ­ ­ ­ V V Collector-Emitter


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PDF BF821, BF823 OT-23 BF820 BF822 OT-23 BF821 BF823 BF821 PNP Epitaxial Silicon Transistor sot-23
L7E transistor

Abstract: BF820 BF821 BF822 BF823
Text: ■bb53^31 □□2M7D4 5T2 BAPX N AMER PHILIPS/DISCRETE L7E ]> BF821 BF823 SILICON EPITAXIAL , complements are BF820, BF822 respectively. QUICK REFERENCE DATA BF821 BF823 Collector-base voltage , ■btSBIBl Q02M7D5 M3*ì «APX BF821 BF823 J N AMER PHILIPS/DISCRETE b?E J> RATINGS Limiting , - -VCEr max. -VEBO max- -'c -'CM 300 300 BF823 max. max. 5 50 100 250 V 250 V - V V mA mA tot , 500 K/W BF821 BF823 < 10 10 nA < 50 50 nA < 10 10 nA < > > < 0,8 50 60 1,6 MHz pF * Mounted


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PDF BF821 BF823 BF820, BF822 BF821 L7E transistor BF820 BF823
Not Available

Abstract: No abstract text available
Text: HL BF821 BF823 SILICON EPITAXIAL TRANSISTORS P -N -P transistors M arking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m _3.0 2.8 0.48 0.14 038 3 Pin , . max. -lC M max. Ptot max. Ti -VcBO ^FH ^ re fx > < > BF821_ BF823 250 V 300 250 V - - V 300 100 mA 250 mW 150 °C 50 1,6 60 pF MHz 71 BF821 BF823 RATINGS (at T a " 25°C unless , -ICM Ptot Tstg max. max. max. max. max. max. max. max. BF821 300 - 300 5 50 100 BF823 250 V


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PDF BF821 BF823 BF821 35ACTERISTICS BF823
BF821

Abstract: BF823
Text: BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N-P transistors Marking BF821 = 1W BF823 = 1Y , = 0; -VCE = 30 V Transition frequency at f = 35 MHz -Ic = 10 mA; -Vce = 10 V BF821 BF823 -VCBO , Copyrighted By Its Respective Manufacturer CD1L BF821 BF823 RATINGS (at Ta Limiting values = 25°C unless , BF823 300 250 V — 250 V 300 — V Ptot Tstg Ti max. max. max. max. Rth J"3 5 50 100 250 -55 to +150 150 500 V mA mA raW °C °C K/W BF821 BF823 -ICBO < 10 10 nA -ICER < 50 50 nA


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PDF BF821 BF823 BF821 BF823
BF821

Abstract: BF823
Text: BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N-P transistors Marking BF821 = 1W BF823 = 1Y , frequency at f = 35 MHz -IC = 10 mA; -Vce = 10 V BF821 BF823 -VCBO max. 300 250 V -Vceo max. — 250 , Cre < 1,6 pF 60 MHz 71 BF821 BF823 RATINGS (at Ta = 25°C unless otherwise specified) Limiting values BF821 BF823 Collector-base voltage (open emitter) -VCBO max. 300 250 V Collector-emitter , unless otherwise specified BF821 BF823 Collector cut-off current IE = 0; -VCb = 200V -ICBO


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PDF BF821 BF823 BF821 BF823
2009 - BF820

Abstract: BF821 BF822 BF823 BF823 NXP
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF821; BF823 PNP high-voltage transistors Product data , high-voltage transistors BF821; BF823 FEATURES PINNING · Low current (max. 50 mA) PIN · High , ) TYPE NUMBER BF821 BF823 2 1 1W* 1Y* Top view 2 MAM256 Note 1. * = p : Made in Hong , mounted package; 3 leads SOT23 BF823 - plastic surface mounted package; 3 leads SOT23 , ; BF823 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL


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PDF BF821; BF823 BF820, BF822. BF821 MAM256 R75/04/pp6 BF820 BF821 BF822 BF823 BF823 NXP
1999 - 301 marking code PNP transistor

Abstract: BF820 BF821 BF822 BF823 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF821; BF823 PNP high-voltage , Product specification PNP high-voltage transistors BF821; BF823 FEATURES PINNING · Low , MARKING MARKING CODE(1) TYPE NUMBER BF821 BF823 2 1 1W 1Y Top view 2 MAM256 Note , BF821 -300 V - -250 V BF821 - -300 V BF823 VCEO - BF823 - , Semiconductors Product specification PNP high-voltage transistors BF821; BF823 THERMAL


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PDF M3D088 BF821; BF823 BF820, BF822. BF821 MAM256 301 marking code PNP transistor BF820 BF821 BF822 BF823 BP317
Not Available

Abstract: No abstract text available
Text: Philips Semiconductors Product specification PNP high-voltage transistors BF821 ; BF823 , , BF822. 3 MARKING TYPE NUMBER MARKING CODE<1> BF821 BF823 2 1W* 1Y* Top V ie w , -3 0 0 V -2 5 0 V - -5 V - BF823 collector-emitter voltage UNIT open emitter BF821 V cE O MAX. open base BF821 - BF823 V ebo emitter-base voltage , iconductors P roduct specification PNP high-voltage transistors BF821 ; BF823 THERMAL


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PDF BF821 BF823 BF820, BF822. MAM256
2001 - BF821

Abstract: BF823
Text: BF823 SILICON EPITAXIAL TRANSISTORS P­N­P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE , max. - max. 300 max. max. max. BF823 250 V 250 V ­ V mA mW °C 100 250 150 hFE > 50 Cre < 1,6 pF fT > 60 MHz Page 1 of 3 BF821 BF823 RATINGS (at TA , 1 MHz IC = 0; ­VCE = 30 V Continental Device India Limited BF823 5 50 100 250 ­55 to , BF823 < 10 10 nA ­I CER < ­I CER < 50 10 50 nA 10 mA ­V CEsat < hFE > 50


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PDF OT-23 BF821 BF823 C-120 BF821 BF823
Not Available

Abstract: No abstract text available
Text: -23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE , . m ax. m ax. BF823 250 V 250 V – V mA mW °C 100 250 150 hFE > 50 C re < 1,6 pF fT > 60 MHz Page 1 of 3 BF821 BF823 RATINGS (at T A = 25°C unless , Feedback capacitance at f = 1 MHz IC = 0; –VCE = 30 V Continental Device India Limited BF823 5


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PDF OT-23 BF821 BF823 C-120
smd transistor 1y

Abstract: BF821 BF823
Text: Transistors SMD Type PNP High-Voltage Transistors BF821, BF823 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High voltage (max. 300 V). 1 0.55 Low current (max. 50 mA) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 , V -250 VCEO BF823 Emitter-base voltage Unit -250 VCBO BF823 Collector-emitter , = -10 V; f = 100 MHz 50 60 MHz hFE Classification TYPE BF821 BF823 Marking


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PDF BF821 BF823 OT-23 BF821 smd transistor 1y BF823
Not Available

Abstract: No abstract text available
Text: Transistors SMD Type Product specification BF821, BF823 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High voltage (max. 300 V). 1 0.55 Low current (max. 50 mA) +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 , V -250 VCEO BF823 Emitter-base voltage Unit -250 VCBO BF823 Collector-emitter , mA; VCE = -10 V; f = 100 MHz 60 MHz hFE Classification TYPE BF821 BF823 Marking


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PDF BF821 BF823 OT-23 BF821
Not Available

Abstract: No abstract text available
Text: transistors FEATURES · Low curren t (max. 50 mA) · High voltage (max. 300 V). BF821 ; BF823 PINNING PIN , F820, BF822. 3 1 MARKING TYPE NUMBER BF821 BF823 MARKING CODE«1) 1W * 1Y * T o p V ie w , (IEC 134). SYMBOL VcBO PARAMETER collector-base voltage BF821 BF823 CONDITIONS open em , BF823 open base -3 0 0 -2 5 0 open collector T amb < 25 °C; note 1 -6 5 -6 5 -5 -5 0 -1 0 0 -5 0 250 , specification PNP high-voltage transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a BF821 ; BF823


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PDF BF821 BF823 BF822. BF821 MAM256 115002/00/03/pp8
SOT89 MARKING 2E

Abstract: SOT-23 MARKING T36 SOT89 MARKING 2d marking codes transistors sot-223 bt1 marking BSR19A PMBT5551 sot 223 marking code BSP df SOT-223 SMD CODE PACKAGE SOT89
Text: BF721 BF821 BF823 BSR20 BSR20A PMBT5401 BF723 BSP15 BST15 PMBTA93 BF623 PZTA93 BSP16 BST16 PMBTA92 , BF622 BF623 BF720 BF721 BF722 BF723 BF820 Code DC DF DA DB * * * Type No. BF821 BF822 BF823 BSP 1-5


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PDF OT-89 OT-223 BF821 BF822 BF823 BSP16 BSP20 BSR19 BSR19A BSR20 SOT89 MARKING 2E SOT-23 MARKING T36 SOT89 MARKING 2d marking codes transistors sot-223 bt1 marking BSR19A PMBT5551 sot 223 marking code BSP df SOT-223 SMD CODE PACKAGE SOT89
p2d smd

Abstract: smd code p2d smd bt2 marking codes transistors sot-223 smd code p1d SOT-23 MARKING T36 sot-89 marking H3 P2D SOT223 transistors sot-23 "Marking code 26" H3 SOT-89
Text: PZTA42 BSP19 BST39 PXTA42 PNP BF621 BF721 BF821 BF823 BSR20 BSR20A PMBT5401 BF723 BSP15 BST15 PMBTA93 , DBp IVp Type No. BF821 BF822 BF823 BSP15 BSP16 BSP19 BSP20 BSR19 BSR19A Code 1Wp 1Xp 1Yp BT1


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PDF BST40 PMBT5401 PMBT5550 PMBT5551 PMBTA42 PMBTA43 PMBTA92 PMBTA93 PXTA42 PXTA92 p2d smd smd code p2d smd bt2 marking codes transistors sot-223 smd code p1d SOT-23 MARKING T36 sot-89 marking H3 P2D SOT223 transistors sot-23 "Marking code 26" H3 SOT-89
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