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Nexperia
BF822,215 Trans GP BJT NPN 250V 0.05A 3-Pin TO-236AB T/R - Tape and Reel (Alt: BF822,215) BF822,215 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet (3) BF822,215 Reel 12,000 4 Weeks 3,000 - - - - - More Info
BF822,215 Tape and Reel 18,000 4 Weeks 3,000 - - - - $0.03919 More Info
BF822,215 Tape and Reel 36,000 5 Weeks, 1 Days 3,000 - - - - €0.0633 More Info
Newark element14 BF822,215 Reel 0 3,000 $0.044 $0.044 $0.044 $0.044 $0.043 More Info
RS Components BF822,215 Reel 0 3,000 - - - - $0.101 More Info
element14 Asia-Pacific BF822,215 0 3,000 - - - - $0.146 More Info
Farnell element14 BF822,215 0 3,000 - - - - £0.0688 More Info
More Distributors
New Advantage Corporation BF822,215 21,000 21,000 - - - - - More Info
NXP Semiconductors
BF822,215 TRANS NPN 250V 0.05A SOT23 BF822,215 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Ameya Holding Limited BF822,215 3,000 3,000 - - - - $0.05772 More Info
Philips Semiconductors
BF822 Small Signal Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB BF822 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. BF822 2,420 - - - - - More Info

BF822 datasheet (21)

Part ECAD Model Manufacturer Description Type PDF
BF822 BF822 ECAD Model Continental Device India Silicon Epitaxial Transistors Original PDF
BF822 BF822 ECAD Model Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
BF822 BF822 ECAD Model Galaxy Semi-Conductor Holdings NPN General Purpose Amplifier Original PDF
BF822 BF822 ECAD Model General Semiconductor Small Signal Transistors (NPN) Original PDF
BF822 BF822 ECAD Model Kexin NPN High-Voltage Transistors Original PDF
BF822 BF822 ECAD Model NXP Semiconductors BF822 - NPN high voltage transistors - Complement: BF823 ; fT min: 60 MHz; hFE max:>50 ; hFE min: 50 ; IC max: 50 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 250 V Original PDF
BF822 BF822 ECAD Model Philips Semiconductors NPN High-Voltage Transistor Original PDF
BF822 BF822 ECAD Model Philips Semiconductors Silicon Epitaxial Transistor Original PDF
BF822 BF822 ECAD Model Rectron Semiconductor Original PDF
BF822 BF822 ECAD Model TY Semiconductor NPN High-Voltage Transistors - SOT-23 Original PDF
BF822 BF822 ECAD Model Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan PDF
BF822 BF822 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
BF822 BF822 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BF822,215 BF822,215 ECAD Model NXP Semiconductors NPN high voltage transistors - Complement: BF823 ; fT min: 60 MHz; hFE max:&gt;50 ; hFE min: 50 ; I<sub>C</sub> max: 50 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 250 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF
BF822S BF822S ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BF822T/R BF822T/R ECAD Model NXP Semiconductors NPN high voltage transistors - Complement: BF823 ; fT min: 60 MHz; hFE max:&gt;50 ; hFE min: 50 ; I<sub>C</sub> max: 50 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 250 V Original PDF
BF822TR BF822TR ECAD Model Philips Semiconductors NPN high-voltage transistor Original PDF
BF822T/R BF822T/R ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
BF822W BF822W ECAD Model Kexin NPN High-Voltage Transistor Original PDF
BF822W BF822W ECAD Model Philips Semiconductors NPN High-Voltage Transistor Original PDF

BF822 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: BF820 BF822 COIL SILICON EPITAXIAL TRANSISTORS N-P-N transistors Marking BF820 = IV BF822 = IX PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 ~2.8 ~ 0.14 0.09 0.48 0.38 , at f = 35 MHz Ic = 10mA; Vc e = 10 V BF822 250 V 250 V — V mA mW Ti hFE > • 50 , BF820 BF822 RATINGS (at Tj\ = 25°C unless otherwise specified) Limiting values Collector-base , . Ti BF820 300 300 max. 5 50 100 BF822 250 V 250 V — V V mA mA 250 -55 to


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PDF BF820 BF822 00Q07fl3
MARKING J1A

Abstract: BF820 BF822
Text: CDU BF820 BF822 SILICON EPITAXIAL TRANSISTORS N-P-N transistors Marking BF820 = IV BF822 = , Collector-base voltage (open emitter) BF820 BF822 VCBO max. 300 250 V Collector-emitter voltage (open , Its Respective Manufacturer BF820 BF822 RATINGS (at Ta = 25°C unless otherwise specified) Limiting , = 0; Vce = 30 V BF820 BF822 vcbo vceo vcer Vebo ic ICM Ptot Tstg Rthj- max. max. max. max , 500 K/W BF820 BF822 ICBO < 10 10 ICER < 50 50 ICER < 10 10 VcEsat < hFE > fj > Cre < 0,6 50 60


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PDF BF820 BF822 BF820 MARKING J1A BF822
1999 - BF820

Abstract: BF821 BF822 BF823 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF820; BF822 NPN high-voltage , Product specification NPN high-voltage transistors BF820; BF822 FEATURES PINNING · Low , 1 MARKING MARKING CODE(1) TYPE NUMBER BF820 1X 2 2 1V BF822 1 Top view , BF820 300 V - 250 V BF820 - 300 V BF822 VCEO - BF822 - 250 , NPN high-voltage transistors BF820; BF822 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER


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PDF M3D088 BF820; BF822 BF821; BF823. BF820 MAM255 BF820 BF821 BF822 BF823 BP317
BF820

Abstract: BF821 BF822 BF823
Text: BF820, BF822 Small Signal Transistors (NPN) FEATURES SOT-23 NPN Silicon Epitaxial Planar , code BF820 = 1V BF822 = 1X Dimensions in inches and (millimeters) Pin configuration 1 = Base , BF820 BF822 VCBO VCBO 300 250 V V Collector-Emitter Voltage BF822 VCEO 250 V , TS ­65 to +150 °C 1) 4/98 Device on fiberglass substrate, see layout BF820, BF822 , . Typ. Max. Unit Collector-Base Breakdown Voltage at IC = 100 µA, IB = 0 BF820 BF822 V


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PDF BF820, BF822 OT-23 BF821 BF823 OT-23 BF820 BF820 BF822
Not Available

Abstract: No abstract text available
Text: current (max. 50 mA) · High voltage (max. 300 V). BF820; BF822 PINNING PIN 1 2 base em itter , MARKING TYPE NUMBER BF820 BF822 'l MARKING CODE 1Vt 1Wt Fig.1 Sim plified outline (SOT23) and symbol. Top view QUICK REFERENCE DATA SYMBOL VcBO PARAMETER collector-base voltage BF820 BF822 , itter voltage BF820 BF822 300 250 100 250 1.6 - V V mA mW IcM P.ot hFE C re h peak , BF820; BF822 SYMBOL VcBO PARAMETER collector-base voltage BF820 BF822 CONDITIONS open em


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PDF BF820; BF822 BF821; BF823. BF820 BF822
Not Available

Abstract: No abstract text available
Text: BF820 BF822 SILICON EPITAXIAL TRANSISTORS N -P-N transistors Marking BF820 = IV BF822 = , 10mA; VcE = 10 V 69 v CB0 v CE0 VCER ÎCM ^tot max. max. BF820_ BF822 300 250 , Cre < 1,6 pF ÍT > 60 Mz H BF820 BF822 RATINGS (at T a limiting values , BF820 300 300 max. BF822 250 V 250 V — V V mA mA 250 -55 to +150 150 mW °C , capacitance at f = 1 MHz i c = 0; Vc e = 30 V BF822 ICBO < 10 10 ICER < ÏCER


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PDF BF820 BF822 BF820_ BFS20
BF820

Abstract: BF822 sot-23 marking 822
Text: BL Galaxy Electrical Production specification NPN General Purpose Amplifier BF820/ BF822 , 1V 1X BF820 BF822 Marking SOT-23 SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol VCBO VCEO Parameter Value Unit Collector-Base Voltage BF820 BF822 300 250 V Collector-Emitter Voltage BF820 BF822 300 250 V VEBO Emitter-Base Voltage , Amplifier BF820/ BF822 ELECTRICAL CHARACTERISTICS @ Ta=25 unless otherwise specified Parameter


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PDF BF820/BF822 OT-23 BF820 BF822 BF820 BF822 sot-23 marking 822
2001 - BF820

Abstract: BF822
Text: BF822 SILICON EPITAXIAL TRANSISTORS N­P­N transistors Marking BF820 = 1V BF822 = 1X PACKAGE , max. 300 max. max. max. BF822 250 V 250 V - V mA mW °C 100 250 150 hFE > 50 Cre < 1,6 pF fT > 60 MHz Page 1 of 3 BF820 BF822 RATINGS (at TA = 25 , Data Sheet VCB0 VCE0 VCER VEB0 IC ICM max. 5 50 100 BF822 250 V 250 V - V V mA mA 250 ­55 to +150 150 500 max. mW ° C °C K/W BF820 BF822 ICB0 < 10


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PDF OT-23 BF820 BF822 C-120 BF820 BF822
bf820

Abstract: No abstract text available
Text: BF820/ BF822 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features , . MARKING: BF820:1V, BF822 : 1X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC , -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Parameter BF820 BF822 BF820 BF822 Dimensions in inches and (millimeters) Value 300 250 300 250 5 50 0.25 150 -55-150 Units , conditions BF820 BF822 BF820 BF822 MIN 300 250 300 250 5 0.01 0.05 50 0.6 60 1.6 V MHz pF MAX UNIT V V V IC


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PDF BF820/BF822 OT-23 OT-23 BF820 BF822: BF822 BF822
2006 - BF820

Abstract: BF822
Text: / BF822 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES Low current (max.50 mA) High voltage (max.300V) Telephony and professional communication equipment. 2. EMITTER 3. COLLECTOR MARKING: BF820:1V, BF822 , Voltage VCBO BF820 BF822 BF820 BF822 Collector-Emitter Voltage VCEO Units 300 250 , specified) Parameter Symbol Test conditions IC=100A, IE=0 MIN BF820 BF822 BF820 BF822 , MHz 1.6 pF Typical Characteristics BF820/ BF822 Jiangsu Changjiang Electronics


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PDF OT-23 BF820/BF822 OT-23 BF820 BF822: BF820 BF822 BF822
BF820

Abstract: SOT-23 marking code LG
Text: BF820 BF822 SILICON EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic , -23. 3.0 Pinning: 1 = base 2 = emitter 3 = collector 0.150 2.8 BF822 250 V 250 V 100 250 150 50 1,6 60 , . > < > 300 300 Dimensions in mm Marking code BF820 = 1 Vp BF822 = 1 Xp -GEI 0 ! 0 .2 © Im H , September 1994 525 BF820 BF822 RATINGS BF820 Collector-base voltage (open emitter) Collector-emitter , BF822 250 250 V 5 50 100 250 150 V mA mA v CBO v CEO V CER v EBO 'c ' cm ptot Tstg Ti max. max


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PDF BF820 BF822 BF821, BF823 OT-23. BF822 BF820 SOT-23 marking code LG
8F820

Abstract: No abstract text available
Text: BF820, BF822 NPN Silicon Epitaxial Planar Transistors especially suited for application in , BF820= 1V BF822 = 1X 0,4 0.4 Top View SOT-23 Plastic Package Weight approx. 0.008 g Dimensions in , . ' ' . Value 300 250 250 300 5 50 Unit V v BF820 BF822 BF822 BF820 V cbo V c , Storage Temperature Range ' > Device on fiberglass substrate, see layout 56 BF820, BF822 , Junction to Ambient Air " Device on fiberglass substrate, see layout 8F820 BF822 BF822 BF820 V(BR)CBO V(BR


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PDF BF820, BF822 BF821 BF823 BF820= OT-23 BF820 BF822 8F820
1997 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF820; BF822 NPN high-voltage , : BF821; BF823. PINNING PIN 1 2 3 base emitter collector BF820; BF822 DESCRIPTION handbook, halfpage 3 3 1 MARKING TYPE NUMBER BF820 BF822 MARKING CODE 1Vp 1Xp Top view 1 2 MAM255 2 , collector-base voltage BF820 BF822 VCEO collector-emitter voltage BF820 BF822 ICM Ptot hFE Cre fT peak collector , BF820 BF822 VCEO collector-emitter voltage BF820 BF822 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1


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PDF M3D088 BF820; BF822 BF821; BF823. BF822 BF820 MAM255
00EM7

Abstract: BF820 BF821 BF822 BF823 oc16
Text: m bbS3T31 DÜ247G0 =557 «APX N AMER PHILIPS/DISCRETE b7E ]> BF820 BF822 SILICON EPITAXIAL , BF822 100 250 150 50 250 V 250 V - V mA mW OC 1,6 pF 60 MHz MECHANICAL DATA Fig. 1 SOT , . April 1991 587 This Material Copyrighted By Its Respective Manufacturer LtSB^l 00EM7D1 BF820 BF822 , Absolute Maximum System (IEC 134) BF820 BF822 Collector-base voltage (open emitter) VCBO max , K/W characteristics BF820 BF822 Tj = 25 °C unless otherwise specif ied Collector


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PDF bbS3T31 247G0 BF820 BF822 BF821, BF823 BF820 00EM7 BF821 BF822 oc16
Not Available

Abstract: No abstract text available
Text: ■I bbSB'iai 00B47DQ =557 « A P X N AMER PHILIPS/DISCRETE BF820 BF822 b7E D y v , Collector-base voltage (open emitter) BF822 v CBO max. 300 250 V Collector-emitter voltage , 002M701 flT3 H A P X BF820 BF822 N AMER PHILIPS/DISCRETE b7E D RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) BF820 BF822 VCBO max. 300 250 V , * ^th j-a CHARACTERISTICS BF820 BF822 Tj = 25 °C unless otherwise specified Collector


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PDF 00B47DQ BF820 BF822 BF821, BF823
Not Available

Abstract: No abstract text available
Text: Philips Semiconductors Product specification NPN high-voltage transistors BF820; BF822 , complements: BF821; BF823. 3 1 MARKING TYPE NUMBER MARKING CODE<1> BF820 1V* BF822 2 , . MAX. UNIT open emitter BF820 V cE O - 300 V BF822 - 250 V - 300 V - 250 V - 5 V collector-emitter voltage open base BF820 BF822 V ebo , Philips Semiconductors Product specification NPN high-voltage transistors BF820; BF822 THERMAL


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PDF BF820; BF822 BF821; BF823. BF820 MAM255
BF820

Abstract: BF822 transistors 10 KW
Text: Transys Electronics L I M I T E D SOT-23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N­P­N transistors Marking BF820 = 1V BF822 = 1X PACKAGE OUTLINE DETAILS ALL , ICM Ptot Tj BF820 max. 300 max. ­ max. 300 max. max. max. BF822 250 V 250 V - V mA , BF822 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector­base voltage , VEB0 IC ICM max. 5 50 100 BF822 250 V 250 V - V V mA mA 250 ­55 to +150 150


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PDF OT-23 BF820 BF822 BF820 BF822 transistors 10 KW
2009 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF820; BF822 NPN high-voltage transistors Product data sheet , transistors BF820; BF822 PINNING FEATURES • Low current (max. 50 mA) PIN • High voltage (max , ) TYPE NUMBER BF820 BF822 1 1V* 1X* Top view 2 2 MAM255 Note 1. * = p : Made in , ˆ’ plastic surface mounted package; 3 leads SOT23 BF822 − plastic surface mounted package; 3 , transistors BF820; BF822 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC


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PDF BF820; BF822 BF821; BF823. BF820 MAM255 R75/04/pp6
Not Available

Abstract: No abstract text available
Text: -23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BF820 = 1V BF822 = 1X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE , VCER ICM Ptot Tj BF820 m ax. 300 m ax. – m ax. 300 m ax. m ax. m ax. BF822 250 V 250 , MHz Page 1 of 3 BF820 BF822 RATINGS (at T A = 25°C unless otherwise specified) Limiting , VCER VEB0 IC ICM m ax. 5 50 100 BF822 250 V 250 V — V V mA mA 250 –55 to


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PDF OT-23 BF820 BF822 C-120
BF820

Abstract: BF822
Text: BF820 BF822 SILICON EPITAXIAL TRANSISTORS N-P-N transistors Marking BF820 = IV BF822 = IX , Transition frequency at f = 35 MHz IC = 10mA; VCE = 10 V BF820 BF822 VCBO max. 300 250 V VCEO max. - , Cre < 1,6 pF fr > 60 MHz 69 BF820 BF822 RATINGS (at Ta = 25°C unless otherwise specified) Limiting values BF820 BF822 Collector-base voltage (open emitter) VCB0 max. 300 250 V , BF820 BF822 Tj = 25 °C unless otherwise specified Collector cut-off current IE = 0


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PDF BF820 BF822 BF820 BF822
Not Available

Abstract: No abstract text available
Text: BF820 BF822 SILICON EPITAXIAL TRANSISTORS N -P -N transistors M arking BF820 = IV BF822 = IX , ay max. max. max. > < > BF820_ BF822 300 250 V 250 V - V 300 100 mA raW 250 °C 150 50 1,6 60 pF MHz 69 BF820 BF822 RATINGS (at T a * 25°C unless otherwise specified) Limiting values , 300 5 50 100 BF822 250 V 250 V _ y V mA mA mW °C °C Tj 250 -55 to +150 150 Rth j_a BF820 500 BF822 K/W ICBO ICER ICER < < < 10 50 10 10 50 10 VcEsat < hFE fj Cre


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PDF BF820 BF822 BF820 BF822
2007 - Not Available

Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification NPN General Purpose Amplifier BF820/ BF822 , and professional communication equipment. SOT-23 ORDERING INFORMATION Type No. BF820 BF822 , specified Symbol VCBO VCEO Parameter Value Unit Collector-Base Voltage BF820 BF822 -300 -250 V Collector-Emitter Voltage BF820 BF822 -300 -250 V VEBO Emitter-Base , Purpose Amplifier BF820/ BF822 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified


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PDF BF820/BF822 -50mA) -300V) OT-23 BF820 BF822
2001 - BF820

Abstract: BF822
Text: -23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N­P­N transistors Marking BF820 = 1V BF822 = 1X PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE , VCER ICM Ptot Tj BF820 max. 300 max. ­ max. 300 max. max. max. BF822 250 V 250 V - V , Page 1 of 3 BF820 BF822 RATINGS (at TA = 25°C unless otherwise specified) Limiting values , . 5 50 100 BF822 250 V 250 V - V V mA mA 250 ­55 to +150 150 500 max. mW °


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PDF OT-23 BF820 BF822 C-120 BF820 BF822
2004 - BF820

Abstract: BF821 BF822 BF823
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF820; BF822 NPN high-voltage transistors Product , NPN high-voltage transistors BF820; BF822 FEATURES PINNING · Low current (max. 50 mA , 1 MARKING CODE(1) TYPE NUMBER BF820 BF822 1 1V* 1X* Top view 2 2 MAM255 , VERSION BF820 - plastic surface mounted package; 3 leads SOT23 BF822 - plastic , specification NPN high-voltage transistors BF820; BF822 LIMITING VALUES In accordance with the


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PDF BF820; BF822 BF821; BF823. BF820 MAM255 SCA76 BF820 BF821 BF822 BF823
SMD transistor Marking 1x

Abstract: BF820 BF822
Text: Transistors SMD Type NPN High-Voltage Transistors BF820, BF822 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 High voltage (max , Ta = 25 Parameter Symbol Collector-base voltage BF820 Rating BF822 Collector-emitter voltage BF820 V 300 V 250 V 5 VCEO BF822 Emitter-base voltage V 250 , ; VCE = 10 V; f = 100 MHz 1.6 60 pF MHz hFE Classification TYPE BF820 BF822 Marking


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PDF BF820 BF822 OT-23 BF820 SMD transistor Marking 1x BF822
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