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Infineon Technologies AG
BF752H6327XT 2.5V,40mA,NPN Transistor BF752H6327XT ECAD Model
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BF752 datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
BF752 BF752 ECAD Model Philips Semiconductors NPN 7 GHz Wideband Transistor Original PDF
BF752 BF752 ECAD Model Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BF752 BF752 ECAD Model Others Shortform Data and Cross References (Misc Datasheets) Scan PDF

BF752 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - BF752

Abstract: AXS SOT343 AN077 BGA420
Text: BF752 NPN Silicon RF Transistor · Low noise amplifier for low voltage applications 3 · Gms , ! Type BF752 Marking AXs 1=B Pin Configuration 2=E 3=C 4=E - Package - SOT343 , of RthJA please refer to Application Note AN077 Thermal Resistance 2010-08-25 BF752 , = 0 DC current gain IC = 20 mA, VCE = 2 V, pulse measured 2010-08-25 BF752 Electrical , | 2010-08-25 Package SOT343 BF752 Package Outline 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 A 1


Original
PDF BF752 OT343 BF752 AXS SOT343 AN077 BGA420
Not Available

Abstract: No abstract text available
Text: bb53T31 ODEMb^b bTb H A P X Philips Semiconductors N AUER PHILIPS/DISCRETE b7E D Product specification NPN 7 GHz wideband transistor FEATURES • BF752 PINNING PIN High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION Code: V38 1 collector 2 emitter 3 base 4 DESCRIPTION emitter 1 The BF752 is , N AMER PHILIPS/DISCRETE APX Product specification b7E J>- BF752 NPN 7 GHz


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PDF bb53T31 BF752 BF752 OT143 MSB014 OT143.
BTB 134

Abstract: BF752 MRD 532 transistor code r8
Text: ■bbS3131 OOSHb^b bTb ■APX Philips Semiconductors . , „„ Product qrMvifiratinn ——N AMER PHILIPS/DISCRETE b?E NPN 7 GHz wideband transistor S BF752 FEATURES • High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION The BF752 is an npn silicon transistor, primarily intended for wideband applications in the UHF and microwave range , wideband transistor BF752 CHARACTERISTICS T = 25 °C unless otherwise specified. SYMBOL PARAMETER


OCR Scan
PDF bbS3131 BF752 BF752 OT143 MSB014 OT143. BTB 134 MRD 532 transistor code r8
BF752

Abstract: UHF transistor GHz MSB014
Text: ® 7110ÔBb QObflbbS gflT MPHIN Product specification NPN 7 GHz wideband transistor Ë BF752 FEATURES PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: V38 • Gold metallization ensures 1 collector excellent reliability. 2 emitter 3 base DESCRIPTION 4 emitter The BF752 is an npn silicon transistor, primarily intended for wideband applications in the UHF and microwave , BF752 CHARACTERISTICS T> = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX


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PDF BF752 BF752 OT143 MSB014 OT143. UHF transistor GHz MSB014
PXTA14

Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: MARK TYPE NO. Marking MARK TYPE NO. MARK TYPE NO. R2 BFR93AW V38 BF752


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PDF OT143, OT323, OD123 OD323 BZV49 BAW56W BSR40 2PB709AR BAW56 BSR41 PXTA14 mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
pm2222a

Abstract: BCB47B SOD80C PHILIPS BF960 PMBTA64 1N4148 SOD80C PXTA14 BCB47BW pzt222a BF606A
Text: SOT143R npn - - 579 BF750 SOT143R npn - - 581 BF752 SOT143 npn -


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PDF BA582 OD123 BA482 BA682 BA683 BA483 BAL74 BAW62, 1N4148 pm2222a BCB47B SOD80C PHILIPS BF960 PMBTA64 1N4148 SOD80C PXTA14 BCB47BW pzt222a BF606A
PXTA14

Abstract: BST60 PMBTA14 2PD601A PMBTA64
Text: - - 7 0.6 581 BF752 15 12 35 300 90 90 30 5 - - 7


OCR Scan
PDF RAT43 KTY82-110 KTY82-120 KTY82-150 KTY82-210 KTY82-220 KTY82-250 KTY85-110 KTY85-120 KTY85-150 PXTA14 BST60 PMBTA14 2PD601A PMBTA64
2SB1275

Abstract: 4330E Model 450 Q2SB1275
Text: SPICE PARAMETER 2SB1275 by ROHM TR Div. * Q2SB1275 PNP BJT model * Date: 2006/11/20 .MODEL Q2SB1275 PNP + IS=450.00E-15 + BF=75.284 + VAF=6.5824 + IKF=1.0712 + ISE=450.00E-15 + NE=1.3466 + BR=318.62 + VAR=100 + IKR=4.1919 + ISC=1.4330E-9 + NC=1.6223 + NK=.57797 + RE=.1 + RB=1.4759 + RC=.16193 + CJE=327.67E-12 + MJE=.58268 + CJC=103.96E-12 + MJC=.46676 + TF=2.9216E-9 + XTF=199.17 + VTF=22.382 + ITF=39.180 + TR=273.01E-9 + XTB=1.5000 -


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PDF 2SB1275 Q2SB1275 00E-15 4330E-9 67E-12 96E-12 9216E-9 01E-9 2SB1275 4330E Model 450
BF752

Abstract: transistor BF 199 2SB1236
Text: SPICE PARAMETER 2SB1236 by ROHM TR Div. * Q2SB1236 PNP BJT model * Date: 2006/11/20 .MODEL Q2SB1236 PNP + IS=450.00E-15 + BF=75.284 + VAF=6.5824 + IKF=1.0712 + ISE=450.00E-15 + NE=1.3466 + BR=318.62 + VAR=100 + IKR=4.1919 + ISC=1.4330E-9 + NC=1.6223 + NK=.57797 + RE=.1 + RB=1.4759 + RC=.16193 + CJE=327.67E-12 + MJE=.58268 + CJC=103.96E-12 + MJC=.46676 + TF=2.9216E-9 + XTF=199.17 + VTF=22.382 + ITF=39.180 + TR=273.01E-9 + XTB=1.5000 -


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PDF 2SB1236 Q2SB1236 00E-15 4330E-9 67E-12 96E-12 9216E-9 01E-9 BF752 transistor BF 199 2SB1236
2SB1236A

Abstract: No abstract text available
Text: SPICE PARAMETER 2SB1236A by ROHM TR Div. * Q2SB1236A PNP BJT model * Date: 2006/11/20 .MODEL Q2SB1236A PNP + IS=450.00E-15 + BF=75.284 + VAF=6.5824 + IKF=1.0712 + ISE=450.00E-15 + NE=1.3466 + BR=318.62 + VAR=100 + IKR=4.1919 + ISC=1.4330E-9 + NC=1.6223 + NK=.57797 + RE=.1 + RB=1.4759 + RC=.16193 + CJE=327.67E-12 + MJE=.58268 + CJC=103.96E-12 + MJC=.46676 + TF=2.9216E-9 + XTF=199.17 + VTF=22.382 + ITF=39.180 + TR=273.01E-9 + XTB=1.5000 -


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PDF 2SB1236A Q2SB1236A 00E-15 4330E-9 67E-12 96E-12 9216E-9 01E-9 2SB1236A
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