The Datasheet Archive

BF556BTR datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
BF556BT/R BF556BT/R ECAD Model NXP Semiconductors N-channel silicon junction field-effect transistors - CRS: 0.8 pF; I<sub>DSS</sub>: 6 to 13 mA; I<sub>G</sub>: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; V<sub>DS</sub>max: 30 V; Y<sub>FS</sub>: 4.5 ms Original PDF
BF556BTR BF556BTR ECAD Model Philips Semiconductors N-channel silicon junction field-effect transistor Original PDF
BF556B T/R BF556B T/R ECAD Model Philips Semiconductors FET Transistor, N Channel, ID 0.013A, Tape and Reel Original PDF
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