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Search Stock (15)

  You can filter table by choosing multiple options from dropdownShowing 15 results of 15
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BF259 SPC Multicomp Newark element14 1,632 $0.86 $0.31
BF259 SPC Multicomp Farnell element14 2,232 £1.41 £0.40
BF259 STMicroelectronics Bristol Electronics 500 - -
BF259 Continental Device India Ltd TME Electronic Components 609 $0.65 $0.28
BF259 STMicroelectronics ComS.I.T. 390 - -
BF259 STMicroelectronics Chip One Exchange 100 - -
BF259 SPC Multicomp element14 Asia-Pacific 2,695 $0.93 $0.54
BF259 STMicroelectronics Bristol Electronics 100 - -
BF259 STMicroelectronics element14 Asia-Pacific - $1.85 $1.08
BF259MC SPC Multicomp element14 Asia-Pacific - $0.76 $0.41
PBF259 Motorola Semiconductor Products Chip One Exchange 2,000 - -
PBF259RS Motorola Semiconductor Products Chip One Exchange 3,500 - -
PBF259RSRL1 Motorola Semiconductor Products Chip One Exchange 2,000 - -
PBF259ZL1 Motorola Semiconductor Products Chip One Exchange 1,850 - -
PBF259ZLI Motorola Semiconductor Products Chip One Exchange 1,500 - -

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BF259 datasheet (59)

Part Manufacturer Description Type PDF
BF259 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=300 / Ic=0.1 / Hfe=25min / fT(Hz)=90M / Pwr(W)=0.8 Original PDF
BF259 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=300 / Ic=0.1 / Hfe=25min / fT(Hz)=90M / Pwr(W)=0.8 Original PDF
BF259 STMicroelectronics HIGH VOLTAGE VIDEO AMPLIFIER Original PDF
BF259 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
BF259 Crimson Semiconductor Transistor Selection Guide Scan PDF
BF259 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
BF259 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
BF259 Micro Electronics Semiconductor Device Data Book Scan PDF
BF259 Micro Electronics NPN HIGH VOLTAGE VIDEO AMPLIFIER - Pol=NPN / Pkg=TO39 / Vceo=300 / Ic=0.1 / Hfe=25min / fT(Hz)=90M / Pwr(W)=0.8 Scan PDF
BF259 Micro Electronics High Voltage Transistors Scan PDF
BF259 Micro Electronics Semiconductor Devices Scan PDF
BF259 Motorola Motorola Transistor Datasheets Scan PDF
BF259 Motorola The European Selection Data Book 1976 Scan PDF
BF259 Motorola European Master Selection Guide 1986 Scan PDF
BF259 Others Semiconductor Master Cross Reference Guide Scan PDF
BF259 Others Shortform Transistor Datasheet Guide Scan PDF
BF259 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BF259 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BF259 Others Shortform Electronic Component Datasheets Scan PDF
BF259 Others Basic Transistor and Cross Reference Specification Scan PDF

BF259 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
bf257

Abstract: BF257.258
Text: SILICON HIGH VOLTAGE TRANSISTORS BF257, BF 258, BF259 TO-39 Metal Can Package INTENDED FOR VIDEO , Voltage BF257 160 BF258 250 BF259 300 UNITS V 160 250 300 V VEBO Peak , Current BF257 >160 BF258 >250 BF259 >300 UNITS V >160 >250 >300 V >5 >5 , BF257, BF 258, BF259 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G , Notes BF257, BF 258, BF259 TO-39 Metal Can Package Disclaimer The product information and the


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PDF BF257, BF259 BF257 BF258 C-120 259Rev180701 bf257 BF257.258
BF257

Abstract: BF259 BF258 transistors bf259 BF257 MOTOROLA BF258-BF259
Text: Thermal Resistance, Junction to Case R«JC 35 °C/W 1EE 0 I k3b?E54 GOAtM? M | BF257 thru BF259 CASE , CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 30 mAdc, la = 0) BF257 BF258 BF259 V(BR)CE0 160 250 300 — - Vdc Collector-Base Breakdown Voltage (IC = 100 pAdc, Ie = 0) BF257 BF258 BF259 V(BR)CBO 160 , ) BF259 ICBO — 1 1 1 50 50 50 nAdc ON CHARACTERISTICS DC Current Gain dC = 30 mAdc, VcE = 10 Vdc


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PDF BF257 BF259 BF257 BF258 BF259 BF258 transistors bf259 BF257 MOTOROLA BF258-BF259
2004 - BF259

Abstract: No abstract text available
Text: BF259 High Voltage Power Transistors Application: · Devices with breakdown voltages of 160V , . Base 3. Collector Page 1 31/05/05 V1.0 BF259 High Voltage Power Transistors Absolute Maximum Ratings Parameter Symbol BF259 Collector Base Voltage VCBO Collector Emitter , Test Condition BF259 Collector Emitter Voltage VCEO IC = 10mA, IB = 0 >300 Collector , .0 BF259 High Voltage Power Transistors Specifications VCEO maximum (V) IC(av) maximum (A) hFE


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PDF BF259 BF259
1994 - BF258

Abstract: BF257 BF259 BF257-BF258-BF259 bf258bf bf258 equivalent transistor BF 257 bf259 datasheet BF258-BF259 J BF259
Text: BF257 BF258-BF259 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTION The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for , for BF257 for BF258 for BF259 Min. Typ. Unit 50 50 50 V CB = 100 V V CB = 200 V V , µA for BF257 for BF258 for BF259 160 250 300 V V V V ( BR) CEO * Collector-emitter Breakdown Voltage (I B = 0) I C = 10 mA for BF257 for BF258 for BF259 160 250 300


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PDF BF257 BF258-BF259 BF257, BF258 BF259 BF257 BF257-BF258-BF259 bf258bf bf258 equivalent transistor BF 257 bf259 datasheet BF258-BF259 J BF259
7500B

Abstract: ic 7500B BF258 dc 7500B BF251 BF259 BF257-BF258-BF259 BF257 BP257 EF257
Text: THE EF257» BF258, BF259 ARE„NPH SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO OUTPUT STAGES IN BLACK-AND-WHITE AND COLOUR TV-RECEIVERS. CASE TO-39 C E B ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage ^CBO Collector-Emitter Voltage vqeo Emitter-Base Voltage vebo Collector Current Total , BF258 BF259 160V 250V 300V 160V 25OV 300V 5V 100mA 5W 800mW -65 to 200°C THERMAL RESISTANCE Junction , : 3-41032 1 • PARAMETER SYMBOL BP257 MDT MAX BF258 MIN MAX BF259 MIN MAX UÍTIT TEST CONDITIONS - â


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PDF EF257Â BF258, BF259 BF257 BF258 100mA 800mW 7500B ic 7500B dc 7500B BF251 BF257-BF258-BF259 BP257 EF257
2001 - BF257

Abstract: BF259 BF258
Text: Certified Manufacturer NPN SILICON HIGH VOLTAGE TRANSISTORS BF257, BF 258, BF259 TO-39 Metal Can , Voltage VCBO Collector Base Voltage BF257 160 BF258 250 BF259 300 UNITS V 160 250 , Current BF257 >160 BF258 >250 BF259 >300 UNITS V >160 >250 >300 V >5 >5 , BF257, BF 258, BF259 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G , BF257, BF 258, BF259 TO-39 Metal Can Package Disclaimer The product information and the selection


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PDF BF257, BF259 BF257 BF258 C-120 259Rev180701 BF257 BF259 BF258
bf259

Abstract: bf258 BF258-BF259 BF257-BF258-BF259 Bf257
Text: 0 0 U nit Vdc Vdc Vdc Vdc Ade Watt mW/°C Watt mW/°C °C BF259 CASE 79-04, STYLE 1 TO-39 (TO , Breakdown Voltage dC = 3 0 mAdc, la = 0) V (B R )C EO BF257 BF258 BF259 V (B R )C B O BF257 BF258 BF259 V , BF258 BF259 1 1 1 80 0.1 Vdc nAdc - - - 50 50 50 - 1.0 - Vdc O N C H A R A C T E R


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PDF f-si-aai--------------------BF257' BF257 BF258 BF259 bf259 BF258-BF259 BF257-BF258-BF259
BF259

Abstract: BF257 BF258 BF258-BF259
Text: SILICON HIGH VOLTAGE TRANSISTORS BF257, BF 258, BF259 TO-39 Metal Can Package INTENDED FOR VIDEO , Voltage BF257 160 BF258 250 BF259 300 UNITS V 160 250 300 V VEBO Peak , Current BF257 >160 BF258 >250 BF259 >300 UNITS V >160 >250 >300 V >5 >5 , BF257, BF 258, BF259 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G , BF257, BF 258, BF259 TO-39 Metal Can Package Disclaimer The product information and the selection


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PDF BF257, BF259 BF257 BF258 C-120 259Rev180701 BF259 BF257 BF258 BF258-BF259
BF257

Abstract: BF258 BF259 bf258 equivalent BF257-BF258-BF259 BF259 CDIL
Text: Certified Manufacturer NPN SILICON HIGH VOLTAGE POWER TRANSISTORS BF257, BF258, BF259 TO-39 Metal , Current Gain Collector Emitter Saturation Voltage BF259 300 300 hFE BF257 >160 >160 TEST , =6mA SYMBOL fT BF259 >300 >300 <50 VCB=200V, IE=0 VCB=250V, IE=0 IC=30mA, VCE=10V VCE (sat , , BF258, BF259 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G H J , Page 2 of 3 Notes BF257, BF258, BF259 TO-39 Metal Can Package Disclaimer The product


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PDF BF257, BF258, BF259 BF258 BF257 C-120 231202E BF257 BF258 BF259 bf258 equivalent BF257-BF258-BF259 BF259 CDIL
BF258

Abstract: BF259 BF257 tranzystory BF258-BF259 C22B BF257-BF258-BF259 bf 695 M100 0jm0
Text: TRANZYSTORY n-p-n * BF257, BF258 i BF259 20-74/2 1 Tranzystory krzemowe planarne áredniej mocy wielkiej czçstotliwosci. Sg przeznaczone do stosowania we wzmacniaczach duzych sygnalów , eksploatacyjnych Typ BF257 BF258 BF259 Napiçcie kolektor-baza Ucb o 160 250 300 V Napiçcie kolektor , 1 mA, / = 0,5 MHz Cues TRANZYSTOR BF259 Parametry statyczne przy tamb = 298 K (25°C) Pr^d , ( brjeb0 5 BF 257 BF258 BF259 - S V


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PDF BF257, BF258 BF259 BF257 1111IIâ BF259 BF257 tranzystory BF258-BF259 C22B BF257-BF258-BF259 bf 695 M100 0jm0
bf258

Abstract: No abstract text available
Text: 'Zf v y ^ iß* \ ~"l ^ B F 257 ■B F 258 ■B F 259 'NPN HIGH VOLTAGE VIDEO AMPLIFIER .VîtfAÿï'^B ïÊSaWî?1A ^ i K ! , ■ÎXÂc-l^B « . V.d'.tr J THE BF257, BF258, BF259 ARE.NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO OUTPUT STAGES IN BLACKAND-WHITE AND COLOUR TV-RECEIVERS. C E B BF257 ABSOLUTE MAXIMUM RATINGS EF258 BF259 , (TA=250C unless otherwise noted) BP257 MIN MAX BF258 MIN MAX BF259 UNIT MIN MAX


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PDF BF257, BF258, BF259 BF257 EF258 BF259 800mW 30hiA 7300B bf258
BC207b

Abstract: BC113 SGS BC208A BC209B BC207A BC209 BC114 BF257 BC113 BC208B
Text: 40 150 10 40 3.5 3531 IC 66 BF258 250 1000 40 150 10 40 3.5 35312A 66 BF259 300 1000 25 — 30 90 , =25"C. Outline Drawing No. 66 applies to BF257, BF258, BF259 only. Max. ratings Characteristics m 25°C Code , BF259 300 300 100 25 30 50 250 1 30/6 31269F »BSY79 120 120 30 30 1 50 90 0.5 2/0.2 7861G •NOTE , BF258 1 250 250 0.1 25 30 31520E 66 BF259 1 300 300 0.1 25 30 31521C 66 BF457 1.25 160 160 0.1 25 30


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PDF BC113 35289X BC114 35Z90C BC115 6291A BC207 35292X BC207A 35293H BC207b BC113 SGS BC208A BC209B BC209 BF257 BC208B
sx3704

Abstract: BRC157 Germanium Diode aa143 BRC-116 BY238 TRANSISTOR BC147 1n4148 ITT BC107/spice model bf199 tungsram SN76226DN
Text: V Texas BF259 Base X SG S/ATES BF259 Base X M otorola BF259 Base X VT109* Texas BF259 Base V SG S/ATES BF259 Base V M otorola BF259 Base V VT110* Texas BF259 Base V SG S/ATES BF259 Base V M otorola BF259 *VT108, VT109, VT110— do not m ix alternatives VT108 * Diodes W101 W102 , . *VT105, VT106, VT107— do no t m ix alternatives Base \ VT108* Texas BF259 Base \ SG S/ATES BF259 . Base \ M otorola BF259 Base \ VT109* Texas BF259 Base SG S/ATES BF259 . M otorola


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PDF ircD376 BD234 VT854, VT855â VT854* iTT44, BZX79-C24, BZX83-C24, BZX88-C24 sx3704 BRC157 Germanium Diode aa143 BRC-116 BY238 TRANSISTOR BC147 1n4148 ITT BC107/spice model bf199 tungsram SN76226DN
BF259

Abstract: BF236 BF257 BF257-BF258-BF259 BF258
Text: \ ) BF 257 ■BF 258 ■BF 259 THE BF257, BF258, BF259 ARE.NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO OUTPUT STAGES IN BLACK-AND-WHITE AND COLOUR TV-RECEIVERS. CASE TO-39 C E B ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage V^H) Collector-Emitter Voltage VqeO Emitter-Base Voltage VebO Collector Current ic Total Power Dissipation @ Tc ^25°C Ptot @Ta^25°C Operating Junction & Storage Temperature Tj, Tstg BF257 BF236 BF259 l60V 250V 300V 160V 250V 300V 5V 100mA 5W 800mW -65 to 200Â


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PDF BF257, BF258, BF259 BF257 BF236 100mA 800mW BF257-BF258-BF259 BF258
2n2222 itt

Abstract: itt 2n2222 2N2222A itt BSY86 BSY83 itt 2N2222A BSY85 2N2218 BSY84 2N2219A
Text: =25"C. Outline Drawing No. 66 applies to BF257, BF258, BF259 only. Max. ratings Characteristics m 25°C Code , BF259 300 300 100 25 30 50 250 1 30/6 31269F »BSY79 120 120 30 30 1 50 90 0.5 2/0.2 7861G •NOTE


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PDF 2N2218 7785A 2N2218A 31275X 2N2219 27786X 2N2219A 31276H 2N2221 31272E 2n2222 itt itt 2n2222 2N2222A itt BSY86 BSY83 itt 2N2222A BSY85 BSY84
Not Available

Abstract: No abstract text available
Text: 3G E D ■T 'ì a 'is a ? G o a D ^ s GL SGS-THOMSON J*l®IILi(g¥^MO(gS S G 3 ■T ^ S Ï T o s BF257 BF258-BF259 S -T H O M S O N HIGH VOLTAGE VIDEO AMPLIFIERS D ESC RIPTIO N The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for video out­ put stages in CTV and , . ABSOLUTE MAXIMUM RATINGS S ym b o l V a lu e P a ra m e te r U n it BF257 B F 25 8 BF259


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PDF BF257 BF258-BF259 BF257, BF258 BF259 BF259 T-33-05 BF257) \fcEO160V
2n2222 itt

Abstract: ME6102 ME6002 BSY86 MA8003 BFY72 BFY50 ME8003 fairchild semiconductors 2n2222 micro electronics
Text: . 66 applies to BF257, BF258, BF259 only. Max. ratings Characteristics m 25°C Code VcBO (V) Vceo (V , 160 160 100 25 30 50 100 1 30/6 31267X BF258 250 250 100 25 30 50 200 1 30/6 31268H BF259 300 300 , BF257 1 160 160 0.1 25 30 31519B 66 BF258 1 250 250 0.1 25 30 31520E 66 BF259 1 300 300 0.1 25 30


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PDF BSX20 35250H BSX26 35251F 2N914 35252D 2N2369 35253B 2N2369A 35254X 2n2222 itt ME6102 ME6002 BSY86 MA8003 BFY72 BFY50 ME8003 fairchild semiconductors 2n2222 micro electronics
BF336

Abstract: PE7058 transistor SE7055 BF338 SE7056 2N5832 BF152 BD115 fairchild to-106 MPS-U10F
Text: BF259 300 25/- 0.03 1.0 0.03 75 1.0 TO-39 9 D40N3F 300 30/90 0.02 — — 40 10 Dynawatt 10 D40N4F , 300 40/200 30 40 4.0 1230 4.17 TO-92 21 BF259 300 25/- 30 90 (Typ) 4.2 1000 7.0 TO-39 22 MPSA92


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PDF BF257 BF336 BF337 BF338 BF258 D40N1F D40N2F BF259 D40N3F D40N4F BF336 PE7058 transistor SE7055 BF338 SE7056 2N5832 BF152 BD115 fairchild to-106 MPS-U10F
BF337

Abstract: 2N5832 BF336 se7055 bf338 FAIRCHILD TO-106 2N5058 BC533 2N5059 TIP61
Text: 40/200 30 50 3.0 878 2.08 TO-92 20 PE7059 300 40/200 30 40 4.0 1230 4.17 TO-92 21 BF259 300 25/- , Dynawatt 7 D40N2F 250 60/180 0.02 — — 40 10 Dynawatt 8 BF259 300 25/- 0.03 1.0 0.03 75 1.0 TO-39 9


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PDF BC533 MPS5551M 2N5831 2N5832 2N5833 BF336 BD115 BF337 2N4926 MPSA43 BF337 2N5832 BF336 se7055 bf338 FAIRCHILD TO-106 2N5058 BC533 2N5059 TIP61
2002 - BF259

Abstract: No abstract text available
Text: BF259 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016) 0.53 (0.021) dia. IC = 0.1A 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications


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PDF BF259 O205AD) 10/30m 1-Aug-02 BF259
2002 - Not Available

Abstract: No abstract text available
Text: BF259 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 300V 5.08 (0.200) typ. IC = 0.1A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS


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PDF BF259 O205AD) 10/30m 19-Jun-02
2N3053 equivalent

Abstract: bc109 equivalent 2N2219 2N2905 BC107 equivalent transistors bf258 equivalent BF178 BC107 pnp equivalent BC177 equivalent f-002 bc303
Text: BF258 NPN TOS 250 250 5 200 30 25 — 110 30 1.0 > amplifiers BF259 NPN TOÏ 300 300 5 200 30 25 _ , Amplifiers BS9365 FI 68 BS9365 FI 68 BF257 BF258 BF259 T05 T05 T05 NPN NPN NPN 160 160 5 250 250 5 300 300 5


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PDF 2N3724A 2N3725A 2N3244 BF257 BS9365 2N4036 2N4037 BS3365 2N3053 equivalent bc109 equivalent 2N2219 2N2905 BC107 equivalent transistors bf258 equivalent BF178 BC107 pnp equivalent BC177 equivalent f-002 bc303
2002 - Not Available

Abstract: No abstract text available
Text: BF259 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 300V 5.08 (0.200) typ. IC = 0.1A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS


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PDF BF259 O205AD) 10/30m 17-Jul-02
TIP61C

Abstract: BF337 se7055 BF338 D40N2F D40N1F BF336 BF259 BF258 BF257
Text: BF259 300 25/- 0.03 1.0 0.03 75 1.0 TO-39 9 D40N3F 300 30/90 0.02 — — 40 10 Dynawatt 10 D40N4F


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PDF BF257 BF336 BF337 BF338 BF258 D40N1F D40N2F BF259 D40N3F D40N4F TIP61C BF337 se7055 BF338 D40N2F D40N1F BF336 BF259 BF258 BF257
C744

Abstract: SGS-ATES c426 BC301-6 cp409 sgs c426 BFY72 Transistor 2N3866 BC119 sgs-ates BFR97
Text: BF258 1 250 250 0.1 25 30 31520E 66 BF259 1 300 300 0.1 25 30 31521C 66 BF457 1.25 160 160 0.1 25 30


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PDF BC119 34546C BC300 31624X BC301 31625R BC302 BFR36 30946B BFR97 C744 SGS-ATES c426 BC301-6 cp409 sgs c426 BFY72 Transistor 2N3866 sgs-ates
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