The Datasheet Archive

BF258 datasheet (56)

Part Manufacturer Description Type PDF
BF258 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=250 / Ic=0.1 / Hfe=25min / fT(Hz)=90M / Pwr(W)=0.8 Original PDF
BF258 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=250 / Ic=0.1 / Hfe=25min / fT(Hz)=90M / Pwr(W)=0.8 Original PDF
BF258 STMicroelectronics HIGH VOLTAGE VIDEO AMPLIFIER Original PDF
BF258 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
BF258 Crimson Semiconductor Transistor Selection Guide Scan PDF
BF258 Fairchild Semiconductor Misc. Data Book Scans 1975/76 Scan PDF
BF258 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
BF258 Micro Electronics Semiconductor Device Data Book Scan PDF
BF258 Micro Electronics NPN HIGH VOLTAGE VIDEO AMPLIFIER - Pol=NPN / Pkg=TO39 / Vceo=250 / Ic=0.1 / Hfe=25min / fT(Hz)=90M / Pwr(W)=0.8 Scan PDF
BF258 Micro Electronics High Voltage Transistors Scan PDF
BF258 Micro Electronics Semiconductor Devices Scan PDF
BF258 Motorola Motorola Transistor Datasheets Scan PDF
BF258 Motorola The European Selection Data Book 1976 Scan PDF
BF258 Motorola European Master Selection Guide 1986 Scan PDF
BF258 Others Semiconductor Master Cross Reference Guide Scan PDF
BF258 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BF258 Others Shortform Transistor Datasheet Guide Scan PDF
BF258 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BF258 Others Shortform Electronic Component Datasheets Scan PDF
BF258 Others Basic Transistor and Cross Reference Specification Scan PDF

BF258 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1994 - BF258

Abstract:
Text: BF257 BF258-BF259 HIGH VOLTAGE VIDEO AMPLIFIERS DESCRIPTION The BF257, BF258 and BF259 are , Unit BF 257 BF258 BF25 9 V CBO Collector-base Voltage (I E = 0) 160 250 300 V V , for BF257 for BF258 for BF259 Min. Typ. Unit 50 50 50 V CB = 100 V V CB = 200 V V , µA for BF257 for BF258 for BF259 160 250 300 V V V V ( BR) CEO * Collector-emitter Breakdown Voltage (I B = 0) I C = 10 mA for BF257 for BF258 for BF259 160 250 300


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PDF BF257 BF258-BF259 BF257, BF258 BF259 BF257 BF257-BF258-BF259 bf258bf transistor BF 257 bf258 equivalent bf259 datasheet BF258-BF259 transistors bf259
BF259

Abstract:
Text: TRANZYSTORY n-p-n * BF257, BF258 i BF259 20-74/2 1 Tranzystory krzemowe planarne áredniej , eksploatacyjnych Typ BF257 BF258 BF259 Napiçcie kolektor-baza Ucb o 160 250 300 V Napiçcie kolektor , mA, f = 0,5 MHz Cues — 2,5 pF 20-74/2 2 ícbo TRANZYSTOR BF258 Parametry statyczne przy , ( brjeb0 5 BF 257 BF258 BF259 - S V , ; Ia =0,2/7)4 [mA] 60 50 40 20 10 BF 257 BF258 BF 259


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PDF BF257, BF258 BF259 BF257 1111IIâ BF259 BF257 tranzystory BF258-BF259 BF257-BF258-BF259 bf 695 C22B M100 0jm0
BF257

Abstract:
Text: Certified Manufacturer NPN SILICON HIGH VOLTAGE POWER TRANSISTORS BF257, BF258 , BF259 TO-39 Metal , BF258 250 250 BF257 160 160 VEBO IC ICM DYNAMIC CHARACTERISTICS DESCRIPTION Transition , ) BF258 >250 >250 >5 MIN TYP 75 2.5 UNITS V V V nA nA nA V MAX UNITS MHz pF , , BF258 , BF259 TO-39 Metal Can Package TO-39 Metal Can Package A DIM A B C D E F G H J , Page 2 of 3 Notes BF257, BF258 , BF259 TO-39 Metal Can Package Disclaimer The product


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PDF BF257, BF258, BF259 BF258 BF257 C-120 231202E BF257 BF258 BF259 BF257-BF258-BF259 bf258 equivalent BF259 CDIL
BF257

Abstract:
Text: CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 30 mAdc, la = 0) BF257 BF258 BF259 V(BR)CE0 160 250 300 — - Vdc Collector-Base Breakdown Voltage (IC = 100 pAdc, Ie = 0) BF257 BF258 BF259 V(BR)CBO 160 , Collector Cutoff Current (VCB = 100 Vdc, Ie = 0) BF257 (Vcb = 200 Vdc, Ie = 0) BF258 (VCB = 250 Vdc, Ie = 0


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PDF BF257 BF259 BF257 BF258 BF259 BF258 transistors bf259 BF257 MOTOROLA BF258-BF259
7500B

Abstract:
Text: THE EF257» BF258 , BF259 ARE„NPH SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO OUTPUT STAGES IN BLACK-AND-WHITE AND COLOUR TV-RECEIVERS. CASE TO-39 C E B ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage ^CBO Collector-Emitter Voltage vqeo Emitter-Base Voltage vebo Collector Current Total , BF258 BF259 160V 250V 300V 160V 25OV 300V 5V 100mA 5W 800mW -65 to 200°C THERMAL RESISTANCE Junction , : 3-41032 1 • PARAMETER SYMBOL BP257 MDT MAX BF258 MIN MAX BF259 MIN MAX UÍTIT TEST CONDITIONS - â


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PDF EF257Â BF258, BF259 BF257 BF258 100mA 800mW 7500B ic 7500B dc 7500B BF251 BF257-BF258-BF259 BP257 EF257
sx3704

Abstract:
Text: NPN . Base K 3D215 Silicon Power NPN High Voltage S ilicon NPN BF337 BF258 19 , TIS91 (coded green, blue, violet or grey) Texas BF258 . SGS/ATES BF258 , , violet or grey) Texas BF258 . SGS/ATES BF258 . Texas BC184LC . Texas BC184LB . Texas TIS91 (coded green, blue, violet or grey) Texas BF258 . SG S/ATES BF258 Base Base Base Base Base Base Base Base Base Base Base A W G W


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PDF ircD376 BD234 VT854, VT855â VT854* iTT44, BZX79-C24, BZX83-C24, BZX88-C24 sx3704 BRC157 BRC-116 Germanium Diode aa143 BY238 BC107/spice model bf199 TRANSISTOR BC147 1n4148 ITT SGS Transistors SN76226DN
BC207b

Abstract:
Text: 40 150 10 40 3.5 3531 IC 66 BF258 250 1000 40 150 10 40 3.5 35312A 66 BF259 300 1000 25 — 30 90 , =25"C. Outline Drawing No. 66 applies to BF257, BF258 , BF259 only. Max. ratings Characteristics m 25°C Code , ) Stock No. BF257 160 160 100 25 30 50 100 1 30/6 31267X BF258 250 250 100 25 30 50 200 1 30/6 31268H , BF258 1 250 250 0.1 25 30 31520E 66 BF259 1 300 300 0.1 25 30 31521C 66 BF457 1.25 160 160 0.1 25 30


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PDF BC113 35289X BC114 35Z90C BC115 6291A BC207 35292X BC207A 35293H BC207b BC208A BC113 SGS BC209B BF257 BC209
bf259

Abstract:
Text: Breakdown Voltage dC = 3 0 mAdc, la = 0) V (B R )C EO BF257 BF258 BF259 V (B R )C B O BF257 BF258 BF259 V , BF258 BF259 1 1 1 80 0.1 Vdc nAdc - - - 50 50 50 - 1.0 - Vdc O N C H A R A C T E R


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PDF f-si-aai--------------------BF257' BF257 BF258 BF259 bf259 BF258-BF259 BF257-BF258-BF259
bf258

Abstract:
Text: 'Zf v y ^ iß* \ ~"l ^ B F 257 ■B F 258 ■B F 259 'NPN HIGH VOLTAGE VIDEO AMPLIFIER .VîtfAÿï'^B ïÊSaWî?1A ^ i K ! , ■ÎXÂc-l^B « . V.d'.tr J THE BF257, BF258 , BF259 ARE.NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO OUTPUT STAGES IN BLACKAND-WHITE AND COLOUR TV-RECEIVERS. C E B BF257 ABSOLUTE MAXIMUM RATINGS EF258 BF259 , (TA=250C unless otherwise noted) BP257 MIN MAX BF258 MIN MAX BF259 UNIT MIN MAX


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PDF BF257, BF258, BF259 BF257 EF258 BF259 800mW 30hiA 7300B bf258
BF259

Abstract:
Text: BF 257 BF 258 BF 259 SILICON PLANAR NPN HIGH VOLTAGE VIDEO AMPLIFIERS The EIF257, BF258 arid BF 259 are silicon planar epitaxial NPN transistors in TO-39 metal case. They are particularly designed for video output stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits. ABSOLUTE MAXIMUM RATINGS BF 257 BF 258 BF 259 VcBO Collector-base voltage , ) h\ -t -T ' r1 (second breakdown)- CBF257) VCEq 160V ( BF258 ) VCEO 250V (BF259) \£E0 300V 10


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PDF EIF257, BF258 CBF257) BF258) BF259) BF259 BF257 bf258bf
BF258

Abstract:
Text: BF 257 BF 258 SILICON PLANAR NPN BF 259 HIGH VOLTAGE VIDEO AMPLIFIERS The BF 257, BF258 and BF 259 are silicon planar epitaxial NPN transistors in TO-39 metal case. They are particularly designed for video output stages in CTV and MTV sets, class A audio output stages and drivers for horizontal deflection circuits. ABSOLUTE MAXIMUM RATINGS BF 257 BF 258 BF 259 VcBO Collector-base voltage , VrFn1 6( (BF2 57) -» ( BF258 ) VCE0 250V (BF259) \tEO 300V I .


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PDF BF258 BF258) BF259) BF259 BF257 210E BF 258 bf258bf transistor 139 BF
2n2222 itt

Abstract:
Text: =25"C. Outline Drawing No. 66 applies to BF257, BF258 , BF259 only. Max. ratings Characteristics m 25°C Code , ) Stock No. BF257 160 160 100 25 30 50 100 1 30/6 31267X BF258 250 250 100 25 30 50 200 1 30/6 31268H


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PDF 2N2218 7785A 2N2218A 31275X 2N2219 27786X 2N2219A 31276H 2N2221 31272E 2n2222 itt itt 2n2222 2N2222A itt BSY86 BSY83 BSY85 itt 2N2222A 2N2221A
Not Available

Abstract:
Text: 3G E D ■T 'ì a 'is a ? G o a D ^ s GL SGS-THOMSON J*l®IILi(g¥^MO(gS S G 3 ■T ^ S Ï T o s BF257 BF258-BF259 S -T H O M S O N HIGH VOLTAGE VIDEO AMPLIFIERS D ESC RIPTIO N The BF257, BF258 and BF259 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for video out­ put stages in CTV and , Is/b (second breakdown) - I' lì ■-ft}: It [BF257) \fcEO160V ( BF258 ) 250V B F 2 5 9 X


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PDF BF257 BF258-BF259 BF257, BF258 BF259 BF259 T-33-05 BF257) \fcEO160V
BF336

Abstract:
Text: 50 1.0 TO-39 4 BF338 225 20/- 0.03 — 50 1.0 TO-39 5 BF258 250 25/- 0.03 1.0 0.03 75 1.0 TO , 4.17 TO-92 14 BF338 225 20/- 30 80 (3.5) 800 — TO-39 15 BF258 250 40/150 10 40 3.5 1000 7.0 TO


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PDF BF257 BF336 BF337 BF338 BF258 D40N1F D40N2F BF259 D40N3F D40N4F BF336 PE7058 transistor SE7055 BF338 2N5832 SE7056 fairchild to-106 BF152 BD115 BF258
2n2222 itt

Abstract:
Text: . 66 applies to BF257, BF258 , BF259 only. Max. ratings Characteristics m 25°C Code VcBO (V) Vceo (V , 160 160 100 25 30 50 100 1 30/6 31267X BF258 250 250 100 25 30 50 200 1 30/6 31268H BF259 300 300 , BF257 1 160 160 0.1 25 30 31519B 66 BF258 1 250 250 0.1 25 30 31520E 66 BF259 1 300 300 0.1 25 30


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PDF BSX20 35250H BSX26 35251F 2N914 35252D 2N2369 35253B 2N2369A 35254X 2n2222 itt ME6102 BSY86 ME6002 MA8003 BFY72 fairchild semiconductors 2n2222 micro electronics BC119 BFY50
bf257

Abstract:
Text: Voltage BF257 160 BF258 250 BF259 300 UNITS V 160 250 300 V VEBO Peak , Current BF257 >160 BF258 >250 BF259 >300 UNITS V >160 >250 >300 V >5 >5


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PDF BF257, BF259 BF257 BF258 C-120 259Rev180701 bf257 BF257.258
BF259

Abstract:
Text: Voltage BF257 160 BF258 250 BF259 300 UNITS V 160 250 300 V VEBO Peak , Current BF257 >160 BF258 >250 BF259 >300 UNITS V >160 >250 >300 V >5 >5


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PDF BF257, BF259 BF257 BF258 C-120 259Rev180701 BF259 BF257 BF258 BF258-BF259
BF337

Abstract:
Text: -39 15 BF258 250 40/150 10 40 3.5 1000 7.0 TO-39 16 2N4927 250 20/200 30 30 (6.0) 1000 7.0 TO-39 17 , 1.0 TO-39 5 BF258 250 25/- 0.03 1.0 0.03 75 1.0 TO-39 6 D40N1F 250 30/90 0.02 — — 40 10


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PDF BC533 MPS5551M 2N5831 2N5832 2N5833 BF336 BD115 BF337 2N4926 MPSA43 BF337 2N5832 BF336 se7055 bf338 FAIRCHILD TO-106 2N5058 BC533 2N5059 TIP61
2001 - BF257

Abstract:
Text: Voltage VCBO Collector Base Voltage BF257 160 BF258 250 BF259 300 UNITS V 160 250 , Current BF257 >160 BF258 >250 BF259 >300 UNITS V >160 >250 >300 V >5 >5


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PDF BF257, BF259 BF257 BF258 C-120 259Rev180701 BF257 BF259 BF258
2002 - Not Available

Abstract:
Text: BF258 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 250V 5.08 (0.200) typ. IC = 0.1A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS


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PDF BF258 O205AD) 10/30m 19-Jun-02
2002 - Not Available

Abstract:
Text: BF258 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 250V 5.08 (0.200) typ. IC = 0.1A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS


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PDF BF258 O205AD) 10/30m 17-Jul-02
2T3130A9

Abstract:
Text: 2N3053, BSY52 BSY51, BFY33 2N1613, BC301 V435 BSY19, 2N2368 2N3303 BF258 BD372 BSY59, 2N3545


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PDF KT117AM KT117BM KT117G KT117GM KT117VM 2N1923 2N739 BSV56C, HEP310 2N844 2T3130A9 HEP310 kp303g kt117 HEP-310 kt117b KT117G kt117a kt816g kt3102e
TIP61C

Abstract:
Text: FAIRCHILD TRANSISTORS POWER POWER TRANSISTORS (BY Icmax, POLARITY AND ASCENDING VCEO) Item DEVICE NO. Polarity NPN J PNP VCEO V Max hFE Mln/Max @lc A vCE(sat) V Max @ ic A »T MHz Min(Typ) PD^Max) T c= 25°C Package No. IC = 0.1 A Max Continuous 1 BF257 160 25/- 0.03 1.0 0.03 75 1.0 TO-39 2 BF336 180 20/- 0.03 — — 50 1.0 TO-39 3 BF337 200 20/- 0.03 — - 50 1.0 TO-39 4 BF338 225 20/- 0.03 — 50 1.0 TO-39 5 BF258 250 25/- 0.03 1.0 0.03 75 1.0 TO


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PDF BF257 BF336 BF337 BF338 BF258 D40N1F D40N2F BF259 D40N3F D40N4F TIP61C BF337 se7055 BF338 D40N2F D40N1F BF336 BF259 TIP62A BF257
2002 - BF258

Abstract:
Text: BF258 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 250V 0.41 (0.016) 0.53 (0.021) dia. IC = 0.1A 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications


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PDF BF258 O205AD) 10/30m 1-Aug-02 BF258
BF259

Abstract:
Text: \ ) BF 257 ■BF 258 ■BF 259 THE BF257, BF258 , BF259 ARE.NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO OUTPUT STAGES IN BLACK-AND-WHITE AND COLOUR TV-RECEIVERS. CASE TO-39 C E B ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage V^H) Collector-Emitter Voltage VqeO Emitter-Base Voltage VebO Collector Current ic Total Power Dissipation @ Tc ^25°C Ptot @Ta^25°C Operating Junction & Storage Temperature Tj, Tstg BF257 BF236 BF259 l60V 250V 300V 160V 250V 300V 5V 100mA 5W 800mW -65 to 200Â


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PDF BF257, BF258, BF259 BF257 BF236 100mA 800mW BF257-BF258-BF259 BF258
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