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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

BF 199 transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - bf199 equivalent

Abstract:
Text: to produce the necessary output voltage. Figure 8 is the block diagram. The BF 199 transistor is used as common-emitter amplifier. The base-emitter diode of another transistor provides temperature , are used. The cascade circuit uses one BC238-C and one BF 199 transistor . The operating point of the BF I99 transistor is set by a voltage divider supplied from the 2.5-V source. The base-emitter , diode current IF and the detector transistor current IC. From the frequency response characteristic it


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transistor BUX 83

Abstract:
Text: reverse ta ping; BF 569 R-GS 07. In case of reverse taping, the transistor orientation on the tape is , Storege time M S MS 2720 E- 13 199 TELEFUNKEN ELECTRONIC 1?E D ÖSBÜDRb , transistor on tepe1 1 Additional marking for specials5 1 *i 06 *View on flat side of transistor , view on gummed tape 05 = View on round side of transistor , view on gummed tape s) Additional marking " 0 , orientation of transistor not necessary, because box can be opened on top or botton. Example for order No.: B


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PDF 15A3DIN transistor BUX 83 bux c bux 47 st bux MARKING BUX transistor BUX st bux c Marking 47 BUX 72 bux 10 marking
1412D

Abstract:
Text: Tr.Array TD62500 to 599 D-MOS Transistor TD62000 to 199 TD62300 to 499 Bipolar Transistor , TD62318 TD62064 TD62308 TD62164 TD62318 BP,BP-1 BF 80 V VCEF Parasitic Transistor , Output Output Channel 1. TRANSISTOR ARRAY IC 1. TRANSISTOR ARRAY IC 2. BASIC TRANSISTOR AMPLIFIER CIRCUIT 2. BASIC TRANSISTOR AMPLIFIER CIRCUIT COMMON INPUT OUTPUT GND EXAMPLE , RESISTOR) OPERATE DIRECTLY WITH 6V-15V CMOS Cross Reference of Standard Transistor Array Cross


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PDF ULN2000 TD62xxx TD62Mxxx TB62xxx RS232C RS422 25degC) TD62445FN SSOP18-P-225-0 1412D UDN2983A equivalent M54522P equivalent 1411d DARLINGTON SINK DRIVER TLP251 equivalent M54563P equivalent ULN2804A application relay driver ic ULN2804 td62304ap
CF-100

Abstract:
Text: as standard taped: BF 569 R-GS 08. In case of standard taping, the transistor orientation on the tape , as reverse ta ping: BF 569 R-GS 07. In case of reverse taping, the transistor orientation on the tape , \ 120 °C ^arnb- '' g is 199 3635 ft-04 TELEFUNKEN ELECTRONIC filC D , -92 Transistors Orientation of transistor on ta p e 1 1 Additional marking for specialsa ) ') 06 * View on fiat side of transistor , view on gummed tape 05 « =View on round side of transistor , view on gummed tape


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PDF 50B4DIN41867 569-GS CF-100 A08 transistor bss25 A08 marking a08 transistor to-50 F100T transistor bf 203
8ch pnp DARLINGTON TRANSISTOR ARRAY

Abstract:
Text: -ch High-Current Darlington Driver 199 TB62706BN/ BF 16-Bit Shift Register/Latch & Constant Current , S-Driver Series TD62S××× Transistor-Array Series Monolithic Array Series Bipolar Transistor Array TD62××× or ULN/ULQ 2xxx DMOS Transistor Array TB62××× Multi-Chip IC Type (MCT array) Intelligent Driver Series TD62M×××× TD62C××× TB62××× Transistor Array Product Line Characteristics Series Devices S-Driver 9 9 Bipolar Transistor Array 47 228 Special Driver 10


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PDF TD62S× TD62M× TD62C× TB62/TD/ULN/ULQ D62598AP TD62601P TD62602P TD62603P TD62604P TD62703P 8ch pnp DARLINGTON TRANSISTOR ARRAY pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c
Not Available

Abstract:
Text: Syntax) : Transistor Chip Data IS = 4.8499 fA BF = 84.113 - VAF = 21.742 NE = , SIEMENS BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband , 199 8-1 1 -0 1 525 ■SIEMENS BFP 182W Electrical Characteristics at TA = 25°C, unless , –¡ I S l ' i Q ' ] 199 8-1 1 -0 1 Mbl ■SIEMENS BFP 182W Electrical Characteristics at , ) 199 8-1 1-01 TSb ■SIEMENS Collector-base capacitance Ccb = M^Cb) V'be = Hje = 0, f = 1MHz


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PDF 900MHz BFP182W Q62702-F1502 OT-343
2012 - Not Available

Abstract:
Text: ON BOARD STYLE . 199 [5.05]-.690[17.53]. 3. GOLD AREA TO APPEAR ON POST. BF 4. TAILS SHEARED TO , REVISION BF FW-XX-XX-XX-X-XXX-XXX-XX NOTES: 1. MAXIMUM ALLOWABLE BOW: .003[0.08] IN/IN , . BF 8. MAXIMUM CUT FLASH: .010 [0.25]. 9. FILL BODY SO THAT THE LEAD IN OF THE CORE IS ON THE TAIL , TERMINAL PIN) BOARD SPACE BF -XXX±.005 [0.13] (.070 [1.78] MIN) SEE TABLE 1 FOR MAX ROW OPTION -D , SUPPORT EXISTING BUSINESS AS OF 10/17/97 BF TAIL STYLE -01 -02 -04 C L TABLE 1 "A" .045


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AC125K

Abstract:
Text: 329 B 339 B 719 BF 61 CV 283 CV 455 CV 491 CV 492 CV 1375 C V 1376 CV 1535 CV 1977 CV 2128 CV 2901 CV


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PDF 76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K tungsram 3S035T-1 6AN7 ecc83 application notes ECL86 tungsram DG 7-123 AC125UZ PENTODE pl 508 A741PC
Not Available

Abstract:
Text: SIEMENS NPN Silicon RF Transistor · For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA · fT = 8GHz F = 1.2dB at 900MHz BFP 182W ESP: Electrostatic discharge , Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = , 1.7541 0 3 fA V V a fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC , SIEMENS Small Signal Semiconductors by: Institut für Möbil-und Satellitenfunktechnik (IMST) © 199 6


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PDF 900MHz OT-343 BFP182W Q62702-F1502
1s211

Abstract:
Text: SIEMENS NPN Silicon RF Transistor · For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA · fT = 8 GHz F = 1.2 dB at 900 MHz BFP 183R ESP: Electrostatic discharge , , Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = , BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 115.98 0.14562 10.016 , ) © 199 6 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE =


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PDF Q62702-F1594 OT-143R 900MHz 1S211 2I k
Not Available

Abstract:
Text: SIEMENS NPN Silicon RF Transistor · For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA · fT = 8GHz F=1.45dB at 900MHz BFR 181 ESP: Electrostatic discharge , SIEMENS SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data_ _ _ BF = IS = 96.461 0.0010519 fA NF = 0.90617 VAF = NE = VAR = NC = RBM = CJE = TF = , Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 199 6 SIEMENSAG Package Equivalent


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PDF 900MHz Q62702-F1314 OT-23 BFR181
bft93

Abstract:
Text: SIEMENS PNP Silicon RF Transistor · For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA BFT93 ESP: Electrostatic discharge sensitive device, observe , Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = fA 1.0366 VAF = NE = VAR = NC = RBM = CJE , 0.34233 0 3 V V a BFT93 BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = , (IMST) © 199 6 SIEMENS AG Package Equivalent Circuit: LB I = LBO = LEI = LEO = LCI = LCO = CBE = CCB


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PDF BFT93 BFT93 Q62702-F1063 OT-23 900MHz transistor BF 199
Transistor BFr 99

Abstract:
Text: SIEMENS BFR 106 NPN Silicon RF Transistor • For low noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers • Complementary type: BFR 194 , , Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.8998 VAF = 15 NE = 1.3235 VAR = 4.1613 NC = 1.4602 BF = 132.75 - V IKF = 0.44125 - BR = 11.407 V , Group 10 165 9 ■199 8-1 1-01 ä535t,Q5 DlSEDbl 3T4 â–


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PDF Q62702-F1219 OT-23 flE35b05 900MHz Transistor BFr 99
Not Available

Abstract:
Text: (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 17.03 fA BF = 110 - , SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611 1= C CD II CO FAs LU , Satellitenfunktechnik (IMST) © 199 6 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and


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PDF Q62702-F1611 OT-143 0535bOS 900MHz fl235b05
transistor kf 469

Abstract:
Text: ¥ t i ¡%HEWLETT ft "KM PACKARD High Performance Isolated Collector Silicon Bipolar Transistor , perform ance isolated collector silicon bipolar junction transistor housed in a 4-lead SC-70 (SOT , 21.9 19.9 19.3 16.8 15.5 14.7 12.9 11.6 10.3 9.3 8.4 7.6 6.9 6.2 5.6 5.0 4.4 3.9 3.3 2.9 2.4 , -31.2 -28.2 -27.7 -25.5 -24.4 -23.7 -22.3 -21.0 - 19.9 -18.9 -18.1 -17.3 -16.6 -16.0 -15.4 -14.9 -14.5 , =0.8971 IBVL= M=2.292E-1 NBVL= FFE= N=1.0029 FC=0.8 NPN=yes PNP= Forward Reverse BR=1 BF =1 E6 IKE


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PDF HBFP-0420 Package/SOT-343 SC-70) HBFP-0420 SC-70 OT-343) 5968-0129E 5968-1684E transistor kf 469 transistor HAN 819 diode "jyw" JYW SOT KF 469 r778 JYW diode transistor d 2389 transistor BF 697 transistor KF 517
Not Available

Abstract:
Text: SIEMENS BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT , 2G.6 Syntax) : Transistor Chip Data IS = 0.1213 VAF = 30 NE = 1.9052 VAR = 14.599 NC = 1.371 RBM = 7.8145 CJE = 10.416 TF = ITF = VJC = fA BF = , Satellitenfunktechnik (IMST) © 199 6 SIEMENS AG Package Equivalent Circuit: LCO = 0.41 nH CBE = 61


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PDF Q62702-F1488 OT-323 053SbOS 900MHz 15nlA 23Sb05
AH-1 SOT23

Abstract:
Text: SIEMENS NPN Silicon RF Transistor · For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA · Complementary type: BFT92 (PNP) · CECC-type available , Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.1213 30 1.9052 14.599 1.371 7.8145 10.416 26.796 4.4601 0.84079 1.2744 0 3 fA V V n fF ps mA V ns BF = , Satellitenfunktechnik (IMST) © 199 6 SIEMENSAG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE =


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PDF BFT92 Q62702-F1050 OT-23 900MHz AH-1 SOT23 E 94733
Not Available

Abstract:
Text: SIEMENS BFR 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA â , – SIEMENS BFR 280 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data_ fA - IS = 6.472 BF = VAF = 25.609 V NE = 1.6163 - VAR = , Satellitenfunktechnik (IMST) © 199 6 SIEMENS AG Package Equivalent Circuit: CBE = 73 fF CCB = 84


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PDF 900MHz Q62702-F1298 OT-23 D155144 flE35fc D12514S
Not Available

Abstract:
Text: SIEMENS BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • f T = 5.5GHz • Gold metalization for high reliability ESP: Electrostatic discharge , SIEMENS BFP 136W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.5813 fA BF = 113.32 - NF = 1.0653 - VAF = 12.331 V IKF , Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 199 6 SIEMENS AG Package


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PDF Q62702-F1575 OT-343 fi235bDS 900MHz fl235b05
Not Available

Abstract:
Text: SIEMENS NPN Silicon RF Transistor · For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA · f j = 8GHz F = 1.45dB at 900MHz BFP 181R ESP: Electrostatic discharge , (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : BFP181R Transistor Chip Data_ _ BF = 96.461 NF = 0.90617 IS = 0.0010519 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = , : Institut fur Mobil-und Satellitenfunktechnik (IMST) © 199 6 SIEMENS AG Package Equivalent Circuit: LB I


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PDF 900MHz BFP181R Q62702-F1685 OT-143R BFP181R
Not Available

Abstract:
Text: Syntax) : Transistor Chip Data fA 1.0366 IS = BF = 80 - NF = 1.0313 - VAF = , SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration X1s Q62702-F1063 1= B , Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) © 199 6 SIEMENS


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PDF BFT93 Q62702-F1063 OT-23 235b05 G122211 900MHz 235fc
012n3

Abstract:
Text: SIEMENS BFP193 NPN Silicon RF Transistor « For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dB at 900MHz ESP: Electrostatic , SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.2738 fA BF = 125 - NF = 0.95341 - VAF = 24 V IKF = 0.26949 A ISE = , Mobil-und Satellitenfunktechnik (IMST) © 199 6 SIEMENS AG Package Equivalent Circuit: Valid up to 6


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PDF BFP193 900MHz Q62702-F1282 OT-143 012n3
Not Available

Abstract:
Text: ) : Transistor Chip Data IS = 0.18519 fA BF = 94.687 - NF = 1.0236 - VAF = 26.867 , SIEMENS BFP 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA f j = 7GHz • F = 2 .1 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration , Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 199 6 SIEMENS


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PDF 900MHz Q62702-F1500 BFP180W OT-343 fl235bOS D1E1B71 23SbG5
Not Available

Abstract:
Text: ) : Transistor Chip Data IS = 1.0345 fA BF = 115.98 - NF = 0.80799 - VAF = 14.772 , SIEMENS BFP183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration RHs Q62702-F1594 , SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 199 6


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PDF BFP183R Q62702-F1594 OT-143R 76VBE 900MHz a535fc
BF 184 transistor

Abstract:
Text: Transistor Chip Data (Compact Software Syntax): 1 1 RB2 = RC2 = RE1 = CBC= IS = ISE = ISC* = BF = BR* = NF = , SIEM EN S NPN Silicon RF Transistor BFP 405 Featu res · · · · · · For Low C urrent A pplicatio , 73.1 54.8 37.2 19.9 3.3 -9.5 0.999 0.996 0.990 0.969 0.903 0.807 0.725 0.627 0.553 -0.3 -1.5 -7.4 -14.6 , em icon ducto r G roup 250 S IE M E N S BFP 405 S P IC E P aram eters: Transistor Chip Data (Berkeley-SPICE 2G.6 Syntax): 1' IS = BF = NF = VAF = IKF = ISE = NE = BR* = NR* = VAR* = IKR* =


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PDF BFP405 BF 184 transistor BF 274 transistor CBC 184 b transistor CBC 548 B up/rse cima
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