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BDX67 datasheet (59)

Part Manufacturer Description Type PDF
BDX67 Comset Semiconductors 60V NPN silicon darlington - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=16 / Hfe=1kmin / fT(Hz)=7M / Pwr(W)=150 Original PDF
BDX67 Philips Semiconductors Silicon Darlington Power Transistors Original PDF
BDX67 Semelab NPN Epitaxial Base Darlington Power Transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=16 / Hfe=1kmin / fT(Hz)=7M / Pwr(W)=150 Original PDF
BDX67 Mullard Quick Reference Guide 1977/78 Scan PDF
BDX67 Others Basic Transistor and Cross Reference Specification Scan PDF
BDX67 Others Shortform Transistor PDF Datasheet Scan PDF
BDX67 Others Shortform Transistor PDF Datasheet Scan PDF
BDX67 Others Cross Reference Datasheet Scan PDF
BDX67 Others Diode, Transistor, Thyristor Datasheets and more Scan PDF
BDX67 Others Semiconductor Master Cross Reference Guide Scan PDF
BDX67 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BDX67 Others Shortform Electronic Component Datasheets Scan PDF
BDX67 Others Shortform Transistor Datasheet Guide Scan PDF
BDX67 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BDX67 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan PDF
BDX67A Comset Semiconductors NPN Silicon Darlingtons - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=16 / Hfe=1kmin / fT(Hz)=7M / Pwr(W)=150 Original PDF
BDX67A Philips Semiconductors Silicon Darlington Power Transistors Original PDF
BDX67A Semelab NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR Original PDF
BDX67A Mullard Quick Reference Guide 1977/78 Scan PDF
BDX67A Others Basic Transistor and Cross Reference Specification Scan PDF

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BDX67

Abstract: transistor bdx67 BDX66B BDX66A BDX66 BDX67B BDX66B TRANSISTOR BDX66B BDX66A TO3 philips PHILIPS 1980 darlington power transistor 10a
Text: N AMER PHILIPS/DISCRETE 25E D ■bt.53^31 ooim? 7 ■BDX67 ; 67A BDX67B ; 67C T , Dômifi 1 BDX67 ; 67A 11 BDX67B ; 67C II J V_ T-33-29 c RI typ. 3 ki2 R2 typ. 80 fi Fig. 2 Circuit , power transistors 25E D ■bb53131 oail'm □ ■BDX67 ; 67A BDX67B ; 67C CHARACTERISTICS Tj = 25 , BDX67 ; 67A BDX67B ; 67C >/» J 2SE D aoEaoaa 1 CHARACTERISTICS (continued) Tj = 25 °C unless , ) ESE D ■b 1353131 0Q5Q0Q1 3 ■BDX67 ; 67A BDX67B ; 67C 313JI I Jl T-33-29 TIM 0—I ru 5mH


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PDF BDX67; BDX67B; T-33-H? BDX66, BDX66A, BDX66B BDX66C. BDX67 transistor bdx67 BDX66B BDX66A BDX66 BDX67B BDX66B TRANSISTOR BDX66A TO3 philips PHILIPS 1980 darlington power transistor 10a
BDX67

Abstract: BDX67A BDX67B BDX67C
Text: Collector Current ICM Value BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C Unit 60 80 , BDX67B BDX67C 0.25 A PT Power Dissipation BDX67 BDX67A BDX67B BDX67C 150 Watts W/°C TJ Junction Temperature BDX67 BDX67A BDX67B BDX67C -55 to +200 °C IB TS , 1.17 BDX67 BDX67A BDX67B BDX67C °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise


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PDF BDX67, BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C
BDX67

Abstract: BDX67A BDX67B BDX67C
Text: Collector Current ICM Value BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C Unit 60 80 , BDX67B BDX67C 0.25 A PT Power Dissipation BDX67 BDX67A BDX67B BDX67C 150 Watts , BDX67A BDX67B BDX67C IB @ TC = 25° BDX67 , A, B, C COMSET SEMICONDUCTORS 1/4 BDX67 , A , Value Unit 1.17 BDX67 BDX67A BDX67B BDX67C °C/W ELECTRICAL CHARACTERISTICS TC


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PDF BDX67, BDX67 BDX67A BDX67B BDX67C BDX67 BDX67A BDX67B BDX67C
BDX67

Abstract: npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B transistor bdx66 darlington power transistor 10a
Text: applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE BDX67 120 BDX67C 140 BDX67 60 BDX67A 80 BDX67B 100 BDX67C VEBO 100 BDX67B VCEO 80 BDX67A , Sustaining Voltage MAX UNIT 60 BDX67A TYP. 80 IC= 100mA ; L= 25mH V BDX67B 100 , BDX67B VCB= 120V; IE= 0 VCB= 120V; IE= 0; TC=150 1.0 5.0 BDX67C VCB= 140V; IE= 0 VCB= 140V , MAX UNIT 1.17 /W BDX67 /A/B/C isc Product Specification INCHANGE Semiconductor


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PDF BDX66/A/B/C BDX67 BDX67C BDX67A BDX67B BDX67 npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B transistor bdx66 darlington power transistor 10a
bdx67

Abstract: transistor bdx67
Text: N AMER PHILIPS/DISCRETE E5E bL.53‘ 3 > 1 Q O nW 7 ■BDX67 ; 67A BDX67B ; 67C T , PHILIPS/BISCRETE BDX67 ; 67A 1 1 BDX67B ; 67C Jl 5SE D bbS3T31 □ Q l'm fl ^ T-33-29 R1 typ , 1 U J I | Silicon Darlington power transistors □ ■BC BDX67 ; 67A bc BDX67B ; 67C , 1988 773 N ArtER P H I L I P S / D I S C R E T E BDX67 ; 67A BDX67B ; 67C SSE D , 1980 775 N AMER PHILIPS/DISCRETE BDX67 ; 67A BDX67B ; 67C 25E D Jl 1 bbSB'IBl Q02Q0Q2


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PDF BDX67; BDX67B; BDX66, BDX66A, BDX66B BDX66C. BDX67 temperabb53T31 T-33-29 bdx67 transistor bdx67
BDX67

Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification BDX67 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current capability ·DARLINGTON APPLICATIONS ·Designed for power amplification and switching application. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter , Semiconductor Product Specification BDX67 Silicon NPN Power Transistors CHARACTERISTICS Tj , dimensions 3 BDX67 -


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PDF BDX67 BDX67
1999 - BDX67C

Abstract: BDX66C Transistor BDX67C BDX67B BDX67A BDX67 BDX66B BDX66A BDX66 BDX66C TRANSISTOR BDX transistor bdx66 BDX67 transistor BDX 80 BDX67B diagram DARLINGTON
Text: BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 26.6 max. 9.0 max. 20.3 max. E 1 .0 B 2. 5 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 30.1 39.5 max. 4.2 10.9 12.8 PNP complements are: BDX66, BDX66A , VCEO 7/99 BDX67 BDX67A BDX67B BDX67C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise


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PDF BDX67 BDX67A BDX67B BDX67C BDX66, BDX66A, BDX66B, BDX66C. 300ms, BDX67C BDX66C Transistor BDX67C BDX67B BDX67A BDX67 BDX66B BDX66A BDX66 BDX66C TRANSISTOR BDX transistor bdx66 BDX67 transistor BDX 80 BDX67B diagram DARLINGTON
BDX67C

Abstract: bdx67b BDX66C
Text: BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 26.6 max. 9.0 max. 20.3 max. E 1 .0 B 2. 5 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 16.9 30.1 39.5 max. 4.2 10.9 12.8 PNP complements are: BDX66, BDX66A , : sales@semelab.co.uk 7/99 BDX67 BDX67A BDX67B BDX67C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise


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PDF BDX67 BDX67A BDX67B BDX67C BDX66, BDX66A, BDX66B, BDX66C. 300ms, BDX67C bdx67b BDX66C
BDV56

Abstract: BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
Text: BDS15 BDS16 BDS17 BDS18 BDS19 BDS20 BDS21 BDS28/A/B/C BDS29/A/B/C BDX67 BDX67A 50004-113 50004-113 No , 50004-057 Type BDX67B BDX91 BDX92 BDX93 BDX94 BDX95 BDX96 BDY55 BDV56 BDV57 BDY58 BDY90 BDY91 BDY92 BFT32A


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PDF 2N2218 2N2218A 2N2219 2N2219A 2N2913 2N2914 2N2915 2N2916 2N2917 2N2918 BDV56 BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
Not Available

Abstract: No abstract text available
Text: BDX65C BDX66 BDX66A BDX66B BDX66C BDX67 BDX67A BDX67B BDX67C BDX83 BDX83A BDX83B BDX83C


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PDF 00GG44T BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A BDX66B BDX66C BDX67
BDX71

Abstract: BDY10 I/BDX72 BDX74 BDX84 BDx77 BDX86C BDX72 BDX66B BDX66C
Text: SEMELAB LTD 37E J> fll331fl? 0000D47 t ■SMLB TVpeNo. Sep"lon,ily P°lari* Package VCE0 ^ hFE( VCE/'C PD BDX66B SCREEN PNP TO 3 100 16 lkmin 3/10 7M 150 BDX66C SCREEN PNP TO 3 120 16 lkmin 3/10 7M 150 BDX67 CECC NPN * TO 3 60 16 lkmin 3/10 7M 150 BDX67A CECC NPN * TO 3 80 16 lkmin 3/10 7M 150 BDX67B CECC NPN * T03 100 16 lkmin 3/10 7M 150 BDX67C HI-REL NPN * TO 3 120 16 lkmin 3/10 7M 150 BDX70 NPN T0220 60 10 20-80 4/4 75 BDX71 NPN T0220 60 10 20-80 4/4 75 BDX72 NPN


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PDF fll331fl? 0000D47 BDX66B BDX66C BDX67 BDX67A BDX67B BDX67C BDX70 T0220 BDX71 BDY10 I/BDX72 BDX74 BDX84 BDx77 BDX86C BDX72
transistor bdx66

Abstract: BDX66B TRANSISTOR BDX66 BDX66C BDX66B BDX66A BDX66 BDX66C Transistor BDX66A BDX67 Audio Output Transistor Amplifier BDX66B
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000(Min)@ IC= -10A ·Complement to Type BDX67 /A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE BDX66 VEBO Collector-Emitter Voltage -100 BDX66B -120 -140 -60 BDX66A -80 BDX66B -100 BDX66C VCEO


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PDF BDX67/A/B/C BDX66 BDX66B BDX66A BDX66C transistor bdx66 BDX66B TRANSISTOR BDX66 BDX66C BDX66B BDX66A BDX66 BDX66C Transistor BDX66A BDX67 Audio Output Transistor Amplifier BDX66B
philips BDV64A

Abstract: T1P121 BDV66A PHILIPS SEMICONDUCTOR 200v 4A pnp bdv65a philips BDV65 PHILIPS SEMICONDUCTOR BU807 PHILIPS SEMICONDUCTOR B0646 philips TIP147 2a 100v NPN
Text: -220AB 12A 60V 80V 100V 120V 1000 at 5A 2V at 5 A/20 m A PNP - 2.5ps NPN = 6/is at 5A BDX67 BDX67A BDX67B BDX67C BDX66 BDX66A BDX66B BDX66C TO-3 16A 60V 80V 100V 120V 1000 at 10A 2 V at 10A/40mA 3.5ns at 10A


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PDF TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD675 BD677 BD679 philips BDV64A T1P121 BDV66A PHILIPS SEMICONDUCTOR 200v 4A pnp bdv65a philips BDV65 PHILIPS SEMICONDUCTOR BU807 PHILIPS SEMICONDUCTOR B0646 philips TIP147 2a 100v NPN
philips BDV64A

Abstract: BDX67
Text: PNP - 2.5jrs NPN = 6 /is a t5 A BDX67 BDX67A BDX67B BDX67C BDX66 BDX66A BDX66B BDX66C


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PDF bb53T31 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD679 BD681 philips BDV64A BDX67
2N3055H

Abstract: 2N3055 BUX51 Transistor BFX79 BSW68A bu102 TRANSISTOR transistor BUX22 U3158 2n2243 transistor bu103a
Text: BDX63A BDX64 BDX64C BDX65 BDX65A-MOD BDX65B BDX65C BDX66A/02 BDX66B BDX66C BDX67 BDX67C BDX92 BDX96


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PDF U3158. BUV22 BUV23 BUV26 BUV39 BUV47 BUV50 BUV51 BUV52 BUV61-CECC-QR 2N3055H 2N3055 BUX51 Transistor BFX79 BSW68A bu102 TRANSISTOR transistor BUX22 U3158 2n2243 transistor bu103a
BSW68

Abstract: 2N3055 mj2955 50004 2N3440 ST bdy90 BSV64 BSW68A
Text: * B D S2I* BDX67 BDX67A BDX67B B D X 9I BDX92 BDX93 BDX94 BDX95 BDX96 BDY55 BDY56 BDY57 BDY58 BDY90


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PDF T0220SM 0220M BSS44 BSV64 BSW66A BSW67A BSW68 BSW68A BSX62 BSX63 2N3055 mj2955 50004 2N3440 ST bdy90
BDX67

Abstract: transistor bdx66 HC10A BDX66B BDX67B BDX67A BDX66C BDX66A BDX66B TRANSISTOR BDX67C
Text: LMTED Jk>X kbc 2JcO S A Co . SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and genera! amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX67 , BDX67A , BDX67B and BDX67C. quick reference data BDX66 66A 66B 66C Collector-base voltage (open emitter) ~VC80 max. 60 80 100 120 V Collector-emitter voltage {open base) ~vCEO max. 60 80 100 ' 120 V Collector current (peak value) -'cm max. 20


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PDF BDX67, BDX67A, BDX67B BDX67C. BDX66 7Z57S01 BDX67 transistor bdx66 HC10A BDX66B BDX67A BDX66C BDX66A BDX66B TRANSISTOR BDX67C
BDY11

Abstract: BDY23 BDX65C
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BDX20 BDX27 BDX28 BDX29 BDX30 BDX30-10 BDX30-6 BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A BDX66B BDX66C BDX67 BDX67CECC BDX67A BDX67A CECC BDX67B BDX67B CECC BDX67C BDX83 BDX83A BDX83B BDX83C BDX84 BDX84A BDX84B BDX84C BDX85 BDX85A BDX85B BDX85C BDX86 BDX86A BDX86B BDX86C BDX87 BDX87A BDX87B BDX87C BDX88 BDX88A BDX88B BDX88C BDX91 BDX91 CECC BDX92 BDX92 CECC BDX93


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PDF BDX20 BDX27 BDX28 BDX29 BDX30 BDX30-10 BDX30-6 BDX62 BDX62A BDX62B BDY11 BDY23 BDX65C
BDX66

Abstract: transistor bdx66 BDX66B TRANSISTOR BDX67 12697 transistor 66a BDX66B BDX66A BDX66 BDX66 Darlington BDX67C BDX67B BDX67A BDX67 BDX66B BDX66A BDX66 BDX66B
Text: N AMER PHILIPS/DISCRETE E5E D m ^53^31 DOmä? M ■BDX66; 66A . BDX66B; 66C T-ZZ-31 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX67 , BDX67A , BDX67B and BDX67C. QUICK REFERENCE DATA Collector current (peak value) Total power dissipation up to Tmb=25 °C Junction temperature D.C. current gain -IC= 1A;-VCE = 3V -lc= 10A;-VCE = 3 V


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PDF BDX66; BDX66B; T-ZZ-31 BDX67, BDX67A, BDX67B BDX67C. BDX66 transistor bdx66 BDX66B TRANSISTOR BDX67 12697 transistor 66a BDX66B BDX66A BDX66 BDX66 Darlington BDX67C BDX67B BDX67A BDX67 BDX66B BDX66A BDX66 BDX66B
Not Available

Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE HSE D ^ 53^31 DoniB? 4 ■BDX66; 66A . BDX66B; 66C T-3S -3I SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. N-P-N complements are BDX67 , BDX67A , BDX67B and BDX67C. QUICK REFERENCE DATA 66A 66B 66C “ VCBO max. BDX66 60 80 100 120 V Collector-emitter voltage (open base) “ v CEO max. 60


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PDF BDX66; BDX66B; BDX67, BDX67A, BDX67B BDX67C. BDX66 T-33-37
2010 - MJE1100

Abstract: MJ4001 SDN201 BD263B Motorola transistors MJE1102
Text: SGS120 SGS120 TIP120 TIP620 MJE1100 MJE1101 MJE1101 MJE2100 MJE2101 SDM20302 BDX67 2SD1294 2SD1208


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PDF MJ4200 MJ4000 MJD6039 MJD6039-1 2SD1520 2SD1414 2SD1933 MJE1100 MJ4001 SDN201 BD263B Motorola transistors MJE1102
B0845

Abstract: B0847 B0682 BDX45 B0848 BDX67 B0646 BD676 BDX66 bd645 to-220
Text: 150W (Tmb<250C) BDX67 TO—3 AR2 80 60 20 16 200 1000 10 7.0 2.0 10 40 BDX66 -60 -60 BDX67A 100 80 BDX66A -80 -80 BDX67B 120 100 _BDX66B_-100 -100_ •Typical tfh. 20 OUTLINES and DIMENSIONS


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PDF 800mW BSS60 BSS60 BSS51 BSS61 BSS52 BSS62 BDX42 BDX45 BDX43 B0845 B0847 B0682 BDX45 B0848 BDX67 B0646 BD676 BDX66 bd645 to-220
JE350

Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 bd160 JE340 BUT55
Text: BDX62A BDX62B BDX63 BDX63A BDX63B BDX64 BDX64A BDX64B BDX65 BDX65A BDX65B BDX66 BDX66A BDX66B BDX67 BDX67A BD X67B BDX68 BDX68A BDX68B BDX68C BDX69 BDX69A BDX69B BDX69C BDX71 BDX77 BD682 BDX53 BDX53A


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PDF BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 JE350 je180 MJ13004 TP33C BD325 JE172 BDX48 bd160 JE340 BUT55
1997 - DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Text: INDUSTY STANDARD BDX64 BDX64A BDX64B BDX65 BDX65A BDX65B BDX66 BDX66A BDX66B BDX67 BDX67A BDX67B BDX68 BDX68A BDX68B BDX68C BDX69 BDX69A BDX69B BDX69C BDX70 BDX71 BDX72 BDX73 BDX74


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Text: BDX65C BDX66 BDX66A BDX66B BDX66C BDX67 BDX67A BDX67B BDX67C BDX68 BDX68A BDX68B BDX68C BDX69 BDX69A


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PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
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