The Datasheet Archive

BDX62C datasheet (10)

Part Manufacturer Description Type PDF
BDX62C Comset Semiconductors PNP Silicon Darlingtons - Pol=PNP / Pkg=TO3 / Vceo=120 / Ic=8 / Hfe=1kmin / fT(Hz)=7M / Pwr(W)=90 Original PDF
BDX62C Philips Semiconductors Silicon Darlington Power Transistors Original PDF
BDX62C Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=120 / Ic=8 / Hfe=1kmin / fT(Hz)=7M / Pwr(W)=90 Original PDF
BDX62C Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BDX62C Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BDX62C Others Shortform Transistor Datasheet Guide Scan PDF
BDX62C Others Basic Transistor and Cross Reference Specification Scan PDF
BDX62C Others Shortform Transistor PDF Datasheet Scan PDF
BDX62C Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan PDF
BDX62C Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan PDF

BDX62C Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BDX62

Abstract: BDX62B BDX62A BDX62C 62AB
Text: (RMS) IC Collector Current ICM IB PT Value BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C Unit -60 -80 -100 -120 -60 -80 -100 -120 V V -5.0 V -8 A -12 Base Current BDX62 BDX62A BDX62B BDX62C -0.15 A Power Dissipation BDX62 BDX62A BDX62B BDX62C 90 Watts W/°C @ TC = 25° COMSET SEMICONDUCTORS 1/5 BDX 62, A


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PDF BDX62 BDX62A BDX62B BDX62C BDX62 BDX62B BDX62A BDX62C 62AB
BDX62

Abstract: BDX62A BDX62C BDX62B
Text: BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C -60 -80 -100 -120 -60 -80 -100 -120 -5.0 Unit V V V -8 A -12 Base Current BDX62 BDX62A BDX62B BDX62C -0.15 A PT Power Dissipation BDX62 BDX62A BDX62B BDX62C 90 Watts W/°C TJ Junction Temperature -55 to +200 °C TS Storage Temperature BDX62 BDX62A BDX62B BDX62C IB @ TC = 25


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PDF BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62C BDX62B
BDX62A

Abstract: BDX62B BDX62C BDX62 Fh21e
Text: (RMS) IC Collector Current ICM IB PT Value BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C Unit -60 -80 -100 -120 -60 -80 -100 -120 V V -5.0 V -8 A -12 Base Current BDX62 BDX62A BDX62B BDX62C -0.15 A Power Dissipation BDX62 BDX62A BDX62B BDX62C 90 Watts W/°C @ TC = 25° COMSET SEMICONDUCTORS 1/5 BDX 62, A


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PDF BDX62 BDX62A BDX62B BDX62C BDX62A BDX62B BDX62C BDX62 Fh21e
BDX62

Abstract: transistor BDX62 bdx62a BDX63A BDX62C BDX63 BDX63C BDX62B fxs 100 10 TO3 philips
Text: °C; bdx62b • -'CBO < 2 mA" iE s o; -vCB = 70 v; Tj= 200 BDX62C Ib = 0;-Vce = -1^Vceo -'ceo < 0 , -I CMmax Cmax 1 •7Z77084.1 6=0,01 s 5 Cs 5 P W BDX62A 8DX62B BDX62C \ 0,1 ms 10


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PDF bbS3131 D01TIN7 BDX62; BDX62B; BDX63, BDX63A, BDX63B BDX63C. BDX62 transistor BDX62 bdx62a BDX63A BDX62C BDX63 BDX63C BDX62B fxs 100 10 TO3 philips
2002 - Not Available

Abstract: No abstract text available
Text: BDX62C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 120V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 8A All Semelab hermetically sealed products can


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PDF BDX62C O204AA) 16-Jul-02
2002 - BDX62C

Abstract: No abstract text available
Text: BDX62C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. Bipolar PNP Device. VCEO = 120V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 8A 7.92 (0.312) 12.70 (0.50) All Semelab


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PDF BDX62C O204AA) 31-Jul-02 BDX62C
2002 - Not Available

Abstract: No abstract text available
Text: BDX62C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 120V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 8A All Semelab hermetically sealed products can


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PDF BDX62C O204AA) 18-Jun-02
bdx32

Abstract: bdx65b
Text: SEMELAB LTD 37E ]> Ö1331Ö7 0DD004b M SMLB T - 3 3 -¿>/ 'C cont Type No. Option'1 *^ Polari'y Package v CEO hFE< Vc e / ' c PD BDX14 BDX16 BDX18 BDX20 BDX27 BDX28 BDX29 BDX30 BDX31 BDX32 BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX35 BDX53 BDX53A BDX53B BDX53C BDX54 BDX54A BDX54B BDX54C BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A HI-REL HI-REL SCREEN SCREEN HI-REL HI-REL HI-REL


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PDF 0DD004b BDX14 BDX16 BDX18 BDX20 BDX27 BDX28 BDX29 BDX30 BDX31 bdx32 bdx65b
Not Available

Abstract: No abstract text available
Text: BDX63 BDX63A BDX63B BDX63C NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 20.3 max. E 1 .0 B 2. 5 16.9 30.1 39.5 max. 4.2 10.9 12.8 TO3 Package. Case connected to collector. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. ABSOLUTE MAXIMUM RATINGS (Tcase


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PDF BDX63 BDX63A BDX63B BDX63C BDX62, BDX62A, BDX62B, BDX62C. 100ms 300ms,
k 117

Abstract: k117 BCY58 BCY40A BCY39A BCY34A BCY33A BCY32A T0532 BCY30A
Text: SENELAB LTD 37E J> m 0133107 OOOmOTfl : MAiMUFACTURIIMG ISMLB Type Na 3>ÎBAX65 BCW34V BCW35/, BCY30A\ i BCY31A-/ 1 BCY32A BCY33A BCY34A BCY39A"' BCY40A.lv Kl BCY58 BCY59 BCY78 BCY79 ) 0 BD106A\ BD106B ! BD107A • BD107B BD121_J BS/CECC ■BS-O BS-0 BS-O, CV-O BS-O, CV-O BS-O, CV-O BS-O, CV-O BS-O,CV-O ìf/ /Mt^ BD124-Î BDX14\ BDX2M BDX30J BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A fBDX65B BDX65C rjO rJ CECC-O CECC-O CECC-O CECC-O CECC-O CECC-O CECC-O


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PDF BAX65 BCW34V BCW35/, BCY30A\ BCY31A-/ BCY32A BCY33A BCY34A BCY39A" BCY40A k 117 k117 BCY58 BCY39A T0532 BCY30A
bdx65b

Abstract: BD107A BD106B BCY79 BCY78 BCY59 BCY58 BCY34A BCY33A BCY32A
Text: SEMELAB LT» Type Na "J&BAX65 37E D ■Ô1331Ô7 GODDGTfi 1 MANUFACTURING ISMLB I BCY32A BCY33A BCY34A BCY58 , BCY59 ) BCY78 I BCY79 BD106AN BD106B BD107A BD107B BDX14\ BDX2M BDX30J BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A |^BDX65B BDX65C BS/CECC Polarity Package VCEO 'c cont - BS-0 BS-0 UBS-O, CV-0 ' BS-O, CV-0 Diode Array NPN PNP PNP PNP T077 T018 T018 T05 T05 40 45 45 64 64 0.3 0.6 0.6 0.1 0.1 BS-O, CV-0 BS-O, CV-0 BS-O


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PDF BAX65 BCY32A BCY33A BCY34A BCY58 BCY59 BCY78 BCY79 BD106AN BD106B bdx65b BD107A BCY79 BCY59 BCY58 BCY34A
2000 - TRANSISTOR BDX

Abstract: BDX63A Transistor 63B BDX63B BDX63 BDX62 transistor BDX 65 BDX62C BDX62B darlington complementary power amplifier
Text: BDX63 BDX63A BDX63B BDX63C NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 20.3 max. E 1 .0 B 2. 5 16.9 30.1 39.5 max. 4.2 10.9 12.8 TO3 Package. Case connected to collector. PNP complements are: BDX62, BDX62A, BDX62B, BDX62C. ABSOLUTE MAXIMUM RATINGS (Tcase


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PDF BDX63 BDX63A BDX63B BDX63C BDX62, BDX62A, BDX62B, BDX62C. 100ms 300ms, TRANSISTOR BDX BDX63A Transistor 63B BDX63B BDX63 BDX62 transistor BDX 65 BDX62C BDX62B darlington complementary power amplifier
BDW36

Abstract: BuW83 BUW83A BDW34 BDW30 BDW32 BDW03 w2l transistor BDW51 BUV92
Text: BDX62A HR PNP T03 80 8 lkmin 3/3 7M 90 BDX62B HR PNP T03 100 8 lkmin 3/3 7M 90 bdx62c HR PNP T03 120 8


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PDF 1331B7 D0D044Ã BDS29C S0T93M 1000min BUV92 S0T93 BI1V93 I1DV94 BDW36 BuW83 BUW83A BDW34 BDW30 BDW32 BDW03 w2l transistor BDW51 BUV92
Not Available

Abstract: No abstract text available
Text: ; BDX62A l E = 0; - V CB = 60 V ; T j = 200 °C; BDX62B l E = 0; — CB = 70 V; Tj = 200 °C; BDX62C V


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PDF BDX62; BDX62B; BDX63, BDX63A, BDX63B BDX63C. BDX62 Juncti-31 7Z6732S tatiS3T31
WF VQE 13

Abstract: BDX63B wf vqe 14 e BDX63 WF VQE 11 E WF vqe 13 D BDX62 Wf vqe 14 WF VQE 12 wf vqe 13 E
Text: N AMER PHILIPS/DISCRETE 5SE D ■^53131 DOinS? b ■BDX63; 63A BDX63B; 63C SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope, P-N-P complements are BDX62, BDX62A, BDX62B and BDX62C. QUICK REFERENCE DATA BDX63 63A 63 B 63 C Collector-base voltage (open emitter) vCBO max. 80 100 120 140 V Collector-emitter voltage (open base) VCEO max. 60 80 100 120


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PDF BDX63; BDX63B; BDX62, BDX62A, BDX62B BDX62C. BDX63 bfaS313L WF VQE 13 BDX63B wf vqe 14 e WF VQE 11 E WF vqe 13 D BDX62 Wf vqe 14 WF VQE 12 wf vqe 13 E
BDX63

Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE S5E D bbSETEl 0D111S7 b ■BDX63; 63A BDX63B; 63C T - Z Z - W SIL IC O N DARLIN GTO N PO W ER T R A N S IS T O R S N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope, P-N-P complements are BDX62, BD X62A, B D X62B and BDX62C. Q U IC K R E F E R E N C E D A T A B D X63 v CBO max. Collector-emitter voltage (open base) V C EO max. Collector-base voltage


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PDF 0D111S7 BDX63; BDX63B; BDX62, BDX62C. T-33-29 bbS3T31 BDX63
BDY11

Abstract: BDY23 BDX65C
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BDX20 BDX27 BDX28 BDX29 BDX30 BDX30-10 BDX30-6 BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A BDX66B BDX66C BDX67 BDX67CECC BDX67A BDX67A CECC BDX67B BDX67B CECC BDX67C BDX83 BDX83A BDX83B BDX83C BDX84 BDX84A BDX84B BDX84C BDX85 BDX85A BDX85B BDX85C BDX86 BDX86A BDX86B BDX86C BDX87 BDX87A BDX87B BDX87C BDX88 BDX88A BDX88B BDX88C BDX91 BDX91 CECC BDX92 BDX92 CECC BDX93


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PDF BDX20 BDX27 BDX28 BDX29 BDX30 BDX30-10 BDX30-6 BDX62 BDX62A BDX62B BDY11 BDY23 BDX65C
FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Text: BDV94 BDV95 BDV96 BDX35 BDX38 BDX37 BDX42 BDX43 BDX44 BDX45 BDX46 BDX47 BDX62 BDX62A BDX62B BDX62C BDX63


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PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
TRANSISTOR DATASHEET D1555

Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: No file text available


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PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
BGY41

Abstract: BFW10 FET transistor CQY58 germanium germanium transistor zener phc 283 to92 600a transistor bf199 bd643 BTW58
Text: No file text available


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PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium germanium transistor zener phc 283 to92 600a transistor bf199 bd643 BTW58
OT239

Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 triac mw 151 500r PL5727 ZP1430
Text: No file text available


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PDF
Diode 400V 5A

Abstract: lm1083 BZY55C bc109 spice transistor 2n1208 IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: No file text available


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PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C bc109 spice transistor 2n1208 IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
cm .02m z5u 1kv

Abstract: BPW22A B2X84 la4347 pin configuration of BFW10 TDA3653 equivalent fx4054 core TRIAC TAG 9322 HEF40106BP equivalent dsq8
Text: No file text available


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PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 cm .02m z5u 1kv BPW22A B2X84 la4347 pin configuration of BFW10 TDA3653 equivalent fx4054 core TRIAC TAG 9322 HEF40106BP equivalent dsq8
aeg diode Si 61 L

Abstract: aeg diodes D6 BC23B SILICONIX U315 SGS Transistors 2N3750 2N339 2N3299 transistor bf 175 2N2197 GENERAL ELECTRIC
Text: No file text available


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PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 BC23B SILICONIX U315 SGS Transistors 2N3750 2N339 2N3299 transistor bf 175 2N2197 GENERAL ELECTRIC
transistor f6 13003

Abstract: equivalent transistor bj 131-6 BB112 transistor Eb 13003 BM philips om345 transistor bf 175 TRANSISTOR 131-6 BJ 026 Om175 BU705 a1211 lg
Text: No file text available


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PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 BB112 transistor Eb 13003 BM philips om345 transistor bf 175 TRANSISTOR 131-6 BJ 026 Om175 BU705 a1211 lg
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