The Datasheet Archive

BDX62A datasheet (18)

Part Manufacturer Description Type PDF
BDX62A Comset Semiconductors PNP SILICON DARLINGTON Original PDF
BDX62A Philips Semiconductors Silicon Darlington Power Transistors Original PDF
BDX62A Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=8 / Hfe=1kmin / fT(Hz)=7M / Pwr(W)=90 Original PDF
BDX62A Mullard Quick Reference Guide 1977/78 Scan PDF
BDX62A Others Semiconductor Master Cross Reference Guide Scan PDF
BDX62A Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BDX62A Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BDX62A Others Shortform Transistor Datasheet Guide Scan PDF
BDX62A Others Shortform Electronic Component Datasheets Scan PDF
BDX62A Others Basic Transistor and Cross Reference Specification Scan PDF
BDX62A Others Shortform Transistor PDF Datasheet Scan PDF
BDX62A Others Shortform Transistor PDF Datasheet Scan PDF
BDX62A Others Diode, Transistor, Thyristor Datasheets and more Scan PDF
BDX62A Others Transistor Replacements Scan PDF
BDX62A Others Transistor Replacements Scan PDF
BDX62A Others Cross Reference Datasheet Scan PDF
BDX62A Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan PDF
BDX62A Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan PDF

BDX62A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BDX62

Abstract: BDX62B BDX62A BDX62C 62AB
Text: (RMS) IC Collector Current ICM IB PT Value BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A , -12 Base Current BDX62 BDX62A BDX62B BDX62C -0.15 A Power Dissipation BDX62 BDX62A BDX62B BDX62C 90 Watts W/°C @ TC = 25° COMSET SEMICONDUCTORS 1/5 BDX 62, A, B, C Symbol Ratings TJ BDX62 BDX62A BDX62B BDX62C Junction Temperature TS


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PDF BDX62 BDX62A BDX62B BDX62C BDX62 BDX62B BDX62A BDX62C 62AB
BDX62

Abstract: BDX62A BDX62C BDX62B
Text: BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C -60 -80 -100 -120 -60 -80 -100 -120 -5.0 Unit V V V -8 A -12 Base Current BDX62 BDX62A BDX62B BDX62C -0.15 A PT Power Dissipation BDX62 BDX62A BDX62B BDX62C 90 Watts W/°C TJ Junction Temperature -55 to +200 °C TS Storage Temperature BDX62 BDX62A BDX62B BDX62C IB @ TC = 25


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PDF BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62C BDX62B
BDX62A

Abstract: BDX62B BDX62C BDX62 Fh21e
Text: (RMS) IC Collector Current ICM IB PT Value BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A BDX62B BDX62C BDX62 BDX62A , -12 Base Current BDX62 BDX62A BDX62B BDX62C -0.15 A Power Dissipation BDX62 BDX62A BDX62B BDX62C 90 Watts W/°C @ TC = 25° COMSET SEMICONDUCTORS 1/5 BDX 62, A, B, C Symbol Ratings TJ BDX62 BDX62A BDX62B BDX62C Junction Temperature TS


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PDF BDX62 BDX62A BDX62B BDX62C BDX62A BDX62B BDX62C BDX62 Fh21e
BDX62

Abstract: transistor BDX62 bdx62a BDX63A BDX62C BDX63 BDX63C BDX62B fxs 100 10 TO3 philips
Text: V; Tj = 200 «e; BDX62 lE = 0; -VCB = 50 V; Tj = 200 °C; bdx62a lE = 0; - Vcb = 60 V; Tj = 200 , -I CMmax Cmax 1 •7Z77084.1 6=0,01 s 5 Cs 5 P W BDX62A 8DX62B BDX62C \ 0,1 ms 10


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PDF bbS3131 D01TIN7 BDX62; BDX62B; BDX63, BDX63A, BDX63B BDX63C. BDX62 transistor BDX62 bdx62a BDX63A BDX62C BDX63 BDX63C BDX62B fxs 100 10 TO3 philips
2002 - BDX62A

Abstract: No abstract text available
Text: BDX62A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. Bipolar PNP Device. VCEO = 80V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 8A 7.92 (0.312) 12.70 (0.50) All Semelab


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PDF BDX62A O204AA) 31-Jul-02 BDX62A
2002 - BDX62A

Abstract: No abstract text available
Text: BDX62A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 80V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 8A All Semelab hermetically sealed products can


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PDF BDX62A O204AA) 18-Jun-02 BDX62A
2002 - Not Available

Abstract: No abstract text available
Text: BDX62A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 80V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 8A All Semelab hermetically sealed products can


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PDF BDX62A O204AA) 16-Jul-02
but16

Abstract: MJ4247 MJ12005 2N3792 MOTOROLA 2N3442 BDX66 MOTOROLA MJ423 MJ10006 MJ16028 transistor mj3001
Text: POWER TRANSISTORS — BIPOLAR METAL (continued) TO-2Q4AA (FORMERLY TO-3) (continued) Resistive Switching lcCont VcEO (sus) Device Type hFE (W lc t8 US tf US (di lc h MH? PD (Case) Watts Amps Max Volts Min NPN PNP Min/Max Amp Max Max Amp Min (al 25°C 8 60 MJ1000 BDX63 MJ900 BDX62 1k min 1k min 3 3 90 90 80 MJ1001 BDX63A MJ901 BDX62A 1k min 1k min 3 3 90 90 100 BDX63B BDX62B 1k min 3 90 120 MJ4247 MJ4237 40 min 3 0.4 typ 0.18 typ 5 20 '90 250 2N6306 15/75 3 1.6 0.4


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PDF MJ1000 BDX63 MJ900 BDX62 MJ1001 BDX63A MJ901 BDX62A BDX63B BDX62B but16 MJ4247 MJ12005 2N3792 MOTOROLA 2N3442 BDX66 MOTOROLA MJ423 MJ10006 MJ16028 transistor mj3001
Not Available

Abstract: No abstract text available
Text: BDX63 BDX63A BDX63B BDX63C NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 20.3 max. E 1 .0 B 2. 5 16.9 30.1 39.5 max. 4.2 10.9 12.8 TO3 Package. Case connected to collector. PNP complements are: BDX62, BDX62A , BDX62B, BDX62C. ABSOLUTE MAXIMUM RATINGS (Tcase


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PDF BDX63 BDX63A BDX63B BDX63C BDX62, BDX62A, BDX62B, BDX62C. 100ms 300ms,
bdx65b

Abstract: BD107A BD106B BCY79 BCY78 BCY59 BCY58 BCY34A BCY33A BCY32A
Text: SEMELAB LT» Type Na "J&BAX65 37E D ■Ô1331Ô7 GODDGTfi 1 MANUFACTURING ISMLB I BCY32A BCY33A BCY34A BCY58 , BCY59 ) BCY78 I BCY79 BD106AN BD106B BD107A BD107B BDX14\ BDX2M BDX30J BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A |^BDX65B BDX65C BS/CECC Polarity Package VCEO 'c cont - BS-0 BS-0 UBS-O, CV-0 ' BS-O, CV-0 Diode Array NPN PNP PNP PNP T077 T018 T018 T05 T05 40 45 45 64 64 0.3 0.6 0.6 0.1 0.1 BS-O, CV-0 BS-O, CV-0 BS-O


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PDF BAX65 BCY32A BCY33A BCY34A BCY58 BCY59 BCY78 BCY79 BD106AN BD106B bdx65b BD107A BCY79 BCY59 BCY58 BCY34A
2000 - TRANSISTOR BDX

Abstract: BDX63A Transistor 63B BDX63B BDX63 BDX62 transistor BDX 65 BDX62C BDX62B darlington complementary power amplifier
Text: BDX63 BDX63A BDX63B BDX63C NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. 20.3 max. E 1 .0 B 2. 5 16.9 30.1 39.5 max. 4.2 10.9 12.8 TO3 Package. Case connected to collector. PNP complements are: BDX62, BDX62A , BDX62B, BDX62C. ABSOLUTE MAXIMUM RATINGS (Tcase


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PDF BDX63 BDX63A BDX63B BDX63C BDX62, BDX62A, BDX62B, BDX62C. 100ms 300ms, TRANSISTOR BDX BDX63A Transistor 63B BDX63B BDX63 BDX62 transistor BDX 65 BDX62C BDX62B darlington complementary power amplifier
bdx32

Abstract: bdx65b
Text: SEMELAB LTD 37E ]> Ö1331Ö7 0DD004b M SMLB T - 3 3 -¿>/ 'C cont Type No. Option'1 *^ Polari'y Package v CEO hFE< Vc e / ' c PD BDX14 BDX16 BDX18 BDX20 BDX27 BDX28 BDX29 BDX30 BDX31 BDX32 BDX33 BDX33A BDX33B BDX33C BDX34 BDX34A BDX34B BDX34C BDX35 BDX53 BDX53A BDX53B BDX53C BDX54 BDX54A BDX54B BDX54C BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A HI-REL HI-REL SCREEN SCREEN HI-REL HI-REL HI-REL


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PDF 0DD004b BDX14 BDX16 BDX18 BDX20 BDX27 BDX28 BDX29 BDX30 BDX31 bdx32 bdx65b
k 117

Abstract: k117 BCY58 BCY40A BCY39A BCY34A BCY33A BCY32A T0532 BCY30A
Text: SENELAB LTD 37E J> m 0133107 OOOmOTfl : MAiMUFACTURIIMG ISMLB Type Na 3>ÎBAX65 BCW34V BCW35/, BCY30A\ i BCY31A-/ 1 BCY32A BCY33A BCY34A BCY39A"' BCY40A.lv Kl BCY58 BCY59 BCY78 BCY79 ) 0 BD106A\ BD106B ! BD107A • BD107B BD121_J BS/CECC ■BS-O BS-0 BS-O, CV-O BS-O, CV-O BS-O, CV-O BS-O, CV-O BS-O,CV-O ìf/ /Mt^ BD124-Î BDX14\ BDX2M BDX30J BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A fBDX65B BDX65C rjO rJ CECC-O CECC-O CECC-O CECC-O CECC-O CECC-O CECC-O


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PDF BAX65 BCW34V BCW35/, BCY30A\ BCY31A-/ BCY32A BCY33A BCY34A BCY39A" BCY40A k 117 k117 BCY58 BCY39A T0532 BCY30A
BDW36

Abstract: BuW83 BUW83A BDW34 BDW30 BDW32 BDW03 w2l transistor BDW51 BUV92
Text: BDX62A HR PNP T03 80 8 lkmin 3/3 7M 90 BDX62B HR PNP T03 100 8 lkmin 3/3 7M 90 bdx62c HR PNP T03 120 8


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PDF 1331B7 D0D044Ã BDS29C S0T93M 1000min BUV92 S0T93 BI1V93 I1DV94 BDW36 BuW83 BUW83A BDW34 BDW30 BDW32 BDW03 w2l transistor BDW51 BUV92
2N3055H

Abstract: 2N3055 BUX51 Transistor BFX79 BSW68A bu102 TRANSISTOR transistor BUX22 U3158 2n2243 transistor bu103a
Text: 2S732 2S733 BC300 BC301 BCW29 BCW31 BCY30A BCY31A BCY32A BCY33A BCY34A BCY70 BCY72 BDX18 BDX62A BDX63


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PDF U3158. BUV22 BUV23 BUV26 BUV39 BUV47 BUV50 BUV51 BUV52 BUV61-CECC-QR 2N3055H 2N3055 BUX51 Transistor BFX79 BSW68A bu102 TRANSISTOR transistor BUX22 U3158 2n2243 transistor bu103a
WF VQE 13

Abstract: BDX63B wf vqe 14 e BDX63 WF VQE 11 E WF vqe 13 D BDX62 Wf vqe 14 WF VQE 12 wf vqe 13 E
Text: N AMER PHILIPS/DISCRETE 5SE D ■^53131 DOinS? b ■BDX63; 63A BDX63B; 63C SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope, P-N-P complements are BDX62, BDX62A , BDX62B and BDX62C. QUICK REFERENCE DATA BDX63 63A 63 B 63 C Collector-base voltage (open emitter) vCBO max. 80 100 120 140 V Collector-emitter voltage (open base) VCEO max. 60 80 100 120


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PDF BDX63; BDX63B; BDX62, BDX62A, BDX62B BDX62C. BDX63 bfaS313L WF VQE 13 BDX63B wf vqe 14 e WF VQE 11 E WF vqe 13 D BDX62 Wf vqe 14 WF VQE 12 wf vqe 13 E
BUT16

Abstract: MJ12005 MJ4247 BU800 MJ423 MJ-4247 MJ10011 BDX66 MOTOROLA mj6503 motorola MJ4237
Text: MJ900 BDX62 1k min 1k min 3 3 90 90 80 MJ1001 BDX63A MJ901 BDX62A 1k min 1k min 3 3 90 90


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PDF MJ8500 BU204 BU205 2N4901 2N4902 2N4903 MJ410 MJ411 MJ16002 MJ16004 BUT16 MJ12005 MJ4247 BU800 MJ423 MJ-4247 MJ10011 BDX66 MOTOROLA mj6503 motorola MJ4237
BDY11

Abstract: BDY23 BDX65C
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BDX20 BDX27 BDX28 BDX29 BDX30 BDX30-10 BDX30-6 BDX62 BDX62A BDX62B BDX62C BDX63 BDX63A BDX63B BDX63C BDX64 BDX64A BDX64B BDX64C BDX65 BDX65A BDX65B BDX65C BDX66 BDX66A BDX66B BDX66C BDX67 BDX67CECC BDX67A BDX67A CECC BDX67B BDX67B CECC BDX67C BDX83 BDX83A BDX83B BDX83C BDX84 BDX84A BDX84B BDX84C BDX85 BDX85A BDX85B BDX85C BDX86 BDX86A BDX86B BDX86C BDX87 BDX87A BDX87B BDX87C BDX88 BDX88A BDX88B BDX88C BDX91 BDX91 CECC BDX92 BDX92 CECC BDX93


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PDF BDX20 BDX27 BDX28 BDX29 BDX30 BDX30-10 BDX30-6 BDX62 BDX62A BDX62B BDY11 BDY23 BDX65C
Not Available

Abstract: No abstract text available
Text: ; BDX62A l E = 0; - V CB = 60 V ; T j = 200 °C; BDX62B l E = 0; — CB = 70 V; Tj = 200 °C; BDX62C V


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PDF BDX62; BDX62B; BDX63, BDX63A, BDX63B BDX63C. BDX62 Juncti-31 7Z6732S tatiS3T31
2010 - 2SB1100K

Abstract: 2SB638H 2SB1147 2SB1100M 2SB1099 2SB711 PMD13K100 2SB1099L
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V(BR)CEO PD Max hFE tT Max (HZ) 'CBO tr r (CE)sat 'Oper Max Max (8) (A) (V) ON) Min (A) Max (Ohms) Max (°C) Package Style Darlington Transistors, PNP (Cont'd) . . . . 5 10 . . . 15 . . . . 20 . . 25 . . 30 . . . 35 . . 40 . . . 45 . . . . 50 . . . 55 60 · 2N6053 PMD13K60 MJ920 MJ920 2SB872A 2SB939A 2SB951A BDX54B BD266A BD266A BD648 BD700 BD700A 2N6299 MJE6041 BDX62A


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PDF 2N6053 PMD13K60 MJ920 2SB872A 2SB939A 2SB951A BDX54B BD266A 2SB1100K 2SB638H 2SB1147 2SB1100M 2SB1099 2SB711 PMD13K100 2SB1099L
B0845

Abstract: B0847 B0682 BDX45 B0848 BDX67 B0646 BD676 BDX66 bd645 to-220
Text: BDX62A -80 -80 BDX63B 120 100 BDX62B -100 -100 117W (Tmb<25Â


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PDF 800mW BSS60 BSS60 BSS51 BSS61 BSS52 BSS62 BDX42 BDX45 BDX43 B0845 B0847 B0682 BDX45 B0848 BDX67 B0646 BD676 BDX66 bd645 to-220
1997 - DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Text: BDX54F BDX62 BDX62A BDX62B BDX63 BDX63A BDX63B 20/35 ST REPLACEMENT ST NEAREST PREFERRED


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Text: BDV94 BDV95 BDV96 BDX35 BDX38 BDX37 BDX42 BDX43 BDX44 BDX45 BDX46 BDX47 BDX62 BDX62A BDX62B BDX62C BDX63


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PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
JE350

Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 bd160 JE340 BUT55
Text: BDX62A BDX62B BDX63 BDX63A BDX63B BDX64 BDX64A BDX64B BDX65 BDX65A BDX65B BDX66 BDX66A BDX66B BDX67


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PDF BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 JE350 je180 MJ13004 TP33C BD325 JE172 BDX48 bd160 JE340 BUT55
1998 - DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement BUH513 MJ2955 replacement
Text: BDX54E BDX54F BDX62 BDX62A BDX62B BDX63 BDX63A BDX63B BDX64 BDX64A SGS-THOMSON replacement


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PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement BUH513 MJ2955 replacement
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