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BDX34B W Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1993 - BDX34C

Abstract: BDX34A I/BDX34C BDX34D BDX34B BDX34 BDX33D BDX33C BDX33B BDX33A
Text: BDX34, BDX34A, BDX34B , BDX34C, BDX34D Transistor de puissance PNP darlington Copyright © 1997 , conçut pour être utilisé avec BDX33, BDX33A, BDX33B, BDX33C and BDX33D q 70 W à 25°C Température , BDX34B -60 VCBO -80 BDX34C BDX34D V -100 -120 BDX34 -45 BDX34A Tension Collector-emetteur (I B = 0) Unité -45 BDX34A Tension Collector-base (I E = 0) Valeur BDX34B -60 , (or below) 25°C case temperature (see Note 1) Ptot 70 W Continuous device dissipation at


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PDF BDX34, BDX34A, BDX34B, BDX34C, BDX34D BDX33, BDX33A, BDX33B, BDX33C BDX33D BDX34C BDX34A I/BDX34C BDX34D BDX34B BDX34 BDX33D BDX33B BDX33A
2006 - BDX34C

Abstract: 10 amp pnp darlington power transistors BDX33CG BDX33C BDX34CG BDX33B BDX34B marking 33c diode
Text: BDX33B, BDX33C* (NPN) BDX34B , BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington , Voltage BDX33B, BDX34B BDX33C, BDX34C VCEO Collector-Base Voltage TO-220AB CASE 221A-09 STYLE 1 Unit Vdc 80 100 VCB BDX33B, BDX34B BDX33C, BDX34C Emitter-Base Voltage Value 1 , Adc Total Device Dissipation @ TC = 25_C Derate above 25°C PD 70 0.56 W W /_C TJ, Tstg -65 to +150 _C Symbol Max Unit RqJC 1.78 _C/ W MARKING DIAGRAM


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PDF BDX33B, BDX33C* BDX34B, BDX34C* BDX33C BDX34C BDX334B BDX33C, BDX334C 10 amp pnp darlington power transistors BDX33CG BDX34CG BDX33B BDX34B marking 33c diode
2011 - BDX33C

Abstract: No abstract text available
Text: BDX33B, BDX33C (NPN) BDX34B , BDX34C (PNP) Darlington Complementary Silicon Power Transistors , BDX33B, BDX34B BDX33C, BDX34C VCEO Collector−Base Voltage BDX33B, BDX34B BDX33C, BDX34C , Total Device Dissipation @ TC = 25°C Derate above 25°C PD 70 0.56 W W /°C TJ, Tstg −65 to +150 °C Symbol Max Unit RqJC 1.78 MARKING DIAGRAM °C/ W Collector , °C ICBO TC = 25°C TC = 100°C ICEO BDX33B/ BDX34B BDX33C/BDX34C Collector−Emitter


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PDF BDX33B, BDX33C BDX34B, BDX34C BDX334B BDX33C, BDX334C 33C/34B, BDX33C
1993 - BDX34C

Abstract: No abstract text available
Text: BDX34, BDX34A, BDX34B , BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D ● 70 W at 25°C Case Temperature â , ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL -60 BDX34A BDX34B V CBO -80 BDX34C BDX34D -120 -45 -60 BDX34A BDX34B V CEO -80 V -100 , (or below) 25°C case temperature (see Note 1) Ptot 70 W Continuous device dissipation at


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PDF BDX34, BDX34A, BDX34B, BDX34C, BDX34D BDX33, BDX33A, BDX33B, BDX33C BDX33D BDX34C
1993 - BDX33

Abstract: BDX34C BDX34B BDX34A BDX34 BDX33D BDX33C BDX33B BDX33A BDX34D
Text: BDX34, BDX34A, BDX34B , BDX34C, BDX34D PNP SILICON POWER DARLINGTONS Copyright © 1997, Power , , BDX33A, BDX33B, BDX33C and BDX33D q 70 W at 25°C Case Temperature q 10 A Continuous , ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDX34 BDX34B -60 VCBO , ) UNIT -45 BDX34A Collector-base voltage (IE = 0) VALUE BDX34B -60 VCEO BDX34C -80 , temperature (see Note 1) Ptot 70 W Continuous device dissipation at (or below) 25°C free air


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PDF BDX34, BDX34A, BDX34B, BDX34C, BDX34D BDX33, BDX33A, BDX33B, BDX33C BDX33D BDX33 BDX34C BDX34B BDX34A BDX34 BDX33D BDX33B BDX33A BDX34D
1993 - Not Available

Abstract: No abstract text available
Text: BDX34, BDX34A, BDX34B , BDX34C, BDX34D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D ● 70 W at 25°C Case Temperature â , °C case temperature (unless otherwise noted) RATING SYMBOL BDX34A E T E L O S B O BDX34B V CBO -60 -80 BDX34C BDX34D -120 -45 BDX34A BDX34B V CEO BDX34C BDX34D , (or below) 25°C case temperature (see Note 1) Ptot 70 W Continuous device dissipation at


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PDF BDX34, BDX34A, BDX34B, BDX34C, BDX34D BDX33, BDX33A, BDX33B, BDX33C BDX33D
1993 - BDX34C

Abstract: BDX34A BDX34 BDX34D BDX34B BDX33 BDX33D BDX33C BDX33B BDX33A
Text: BDX34, BDX34A, BDX34B , BDX34C, BDX34D PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D 70 W at 25°C Case Temperature 10 , BDX34A BDX34B V CBO -80 BDX34C -120 BDX34 V -100 BDX34D -45 -60 BDX34A Collector-emitter voltage (IB = 0) UNIT -45 BDX34 Collector-base voltage (IE = 0) VALUE BDX34B , below) 25°C case temperature (see Note 1) Ptot 70 W Continuous device dissipation at (or


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PDF BDX34, BDX34A, BDX34B, BDX34C, BDX34D BDX33, BDX33A, BDX33B, BDX33C BDX33D BDX34C BDX34A BDX34 BDX34D BDX34B BDX33 BDX33D BDX33B BDX33A
1993 - bdx34

Abstract: BDX34A
Text: BDX34, BDX34A, BDX34B , BDX34C, BDX34D PNP SILICON POWER DARLINGTONS G Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D G 70 W at 25°C Case Temperature G , BDX34B -60 V CBO -80 BDX34C -120 BDX34 V -100 BDX34D -45 -60 BDX34A Collector-emitter voltage (IB = 0) UNIT -45 BDX34A Collector-base voltage (IE = 0) VALUE BDX34B , below) 25°C case temperature (see Note 1) Ptot 70 W Continuous device dissipation at (or


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PDF BDX34, BDX34A, BDX34B, BDX34C, BDX34D BDX33, BDX33A, BDX33B, BDX33C BDX33D bdx34 BDX34A
2000 - BDX34C

Abstract: BDX34 BDX34A BDX34B
Text: noted Symbol VCBO Value Units : BDX34 : BDX34A : BDX34B : BDX34C VCEO Parameter - 45 - 60 - 80 - 100 V V V V Collector-Emitter Voltage : BDX34 : BDX34A : BDX34B , Dissipation (TC=25°C) TJ TSTG - 0.25 A 70 W Junction Temperature 150 °C Storage , : BDX34 : BDX34A : BDX34B : BDX34C * Collector-Emitter Sustaining Voltage : BDX34 : BDX34A : BDX34B : BDX34C * Collector-Emitter Sustaining Voltage : BDX34 : BDX34A : BDX34B : BDX34C Test Condition


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PDF BDX34/A/B/C BDX33/33A/33B/33C O-220 BDX34 BDX34A BDX34B BDX34C BDX34C BDX34 BDX34A BDX34B
2004 - BDX33

Abstract: BDX33B BDX33C BDX34B BDX34C resistor farnell DARLINGTON 30A 100V npn
Text: (Minimum) - BDX33B, BDX34B = 100V (Minimum) - BDX33C, BDX34C · Monolithic construction with Built-in , L 0.33 0.55 M 2.48 2.98 O 3.70 PNP BDX34B BDX34C 1.36 H NPN , BDX34B BDX34C 80 100 Unit Collector-Emitter Voltage VCEO Collector-Base Voltage , Power Dissipation at TC = 25°C Derate above 25°C PD 70 0.56 W W /°C TJ, TSTG -65 to , Junction to Case Rjc 1.78 °C/ W Figure - 1 Power Derating Page 2 31/05/05 V1.0 BDX33


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PDF BDX33, BDX33B, BDX34B BDX33C, BDX34C BDX33B BDX33C BDX33 BDX33B BDX33C BDX34B BDX34C resistor farnell DARLINGTON 30A 100V npn
2011 - 33c marking

Abstract: BDX33BG box 34b BDX334B BDX33CG BDX334
Text: BDX33B, BDX33C (NPN) BDX34B , BDX34C (PNP) Darlington Complementary Silicon Power Transistors These , Voltage BDX33B, BDX34B BDX33C, BDX34C Collector-Base Voltage BDX33B, BDX34B BDX33C, BDX34C Symbol VCEO , , Tstg Vdc Adc Adc W W /°C °C MARKING DIAGRAM BDX3xyG AY WW THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol RqJC Max 1.78 Unit °C/ W A Y WW G = = = = BDX3xy = , ) BDX34B , BDX34C (PNP) 80 PD, POWER DISSIPATION (WATTS) 60 40 20 0 0 20 40 60 80


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PDF BDX33B, BDX33C BDX34B, BDX34C BDX334B BDX33C, BDX334C 33C/34B, 33c marking BDX33BG box 34b BDX334B BDX33CG BDX334
bdx340

Abstract: BDX43C BPX34 32c52 BPX34C S2274 BDX34 equivalent
Text: BDX34, BDX34A, BDX34B , BDX34C, BDX34D File Num ber 694 10-Ampere P-N-P Darlington Power Transistors 45-60-80-100-120 Volts, 70 Watts Gain of 750 at 4 A (BDX34, BDX34A) Gain of 750 at 3 A ( BDX34B , BDX34C, BDX34D) Features: Applications: O perates fro m 1C w ith o u t p re d riv e r P o w e r s w itc h in g L o w leakage at h ig h te m p e ra tu re H am m er drive rs S eries a n d s h u n t re , -22QAB t: 92C S -39 9 6 9 C M The BDX34, BDX34A, BDX34B , BDX43C, and BDX34D are m onolithic p-n-p


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PDF BDX34, BDX34A, BDX34B, BDX34C, BDX34D 10-Ampere BDX34A) bdx340 BDX43C BPX34 32c52 BPX34C S2274 BDX34 equivalent
2002 - Box 34C

Abstract: box 34b BDX33B BDX33C BDX34B BDX34C
Text: * . . . designed for general purpose and low speed switching applications. PNP BDX34B , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BDX33B BDX34B BDX33C BDX34C Unit VCEO 80 100 Vdc , and Storage Junction Temperature Range 70 0.56 TJ, Tstg Watts W /_C ­65 to +150 _C , RJC 1.78 _C/ W Preferred devices are ON Semiconductor recommended choices for future use and , Publication Order Number: BDX33B/D BDX33B BDX33C BDX34B BDX34C PD, POWER DISSIPATION (WATTS) 80


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PDF BDX33B BDX33C* BDX34B BDX34C BDX33B, BDX33C, 33C/34B, 220AB r14525 Box 34C box 34b BDX33B BDX33C BDX34B BDX34C
Not Available

Abstract: No abstract text available
Text: BDX34, BDX34A, BDX34B , BDX34C, BDX34D PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , , BDX33A, BDX33B, BDX33C and BDX33D 70 W at 25°C Case Temperature B C TO -220 PACKAGE (TOP VIEW) · · , (unless otherwise noted) RATING BDX34 BDX34A Collector-base voltage ( lE = 0) BDX34B BDX34C BDX34D BDX34 BDX34A Collector-em itter voltage ( lB = 0) BDX34B BDX34C BDX34D Em itter-base voltage Continuous , : 1. Derate linearly to 150°C case tem perature at the rate of 0.56 W /°C. 2. Derate linearly to 150


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PDF BDX34, BDX34A, BDX34B, BDX34C, BDX34D BDX33, BDX33A, BDX33B, BDX33C BDX33D
2007 - BDX33CG

Abstract: BDX33BG BDX334 BDX334B BDX33C Box 34C BDX334C BDX34C BDX34B BDX33B
Text: BDX33B, BDX33C* (NPN) BDX34B , BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington , , BDX34B BDX33C, BDX34C VCEO Collector-Base Voltage Unit TO-220AB CASE 221A-09 STYLE 1 Vdc 1 80 100 VCB BDX33B, BDX34B BDX33C, BDX34C Emitter-Base Voltage Value 2 3 , Device Dissipation @ TC = 25°C Derate above 25°C PD 70 0.56 W W /°C TJ, Tstg -65 to +150 °C Symbol Max Unit RqJC 1.78 MARKING DIAGRAM °C/ W Collector Current -


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PDF BDX33B, BDX33C* BDX34B, BDX34C* BDX33C BDX34C BDX334B BDX33C, BDX334C BDX33CG BDX33BG BDX334 BDX334B Box 34C BDX334C BDX34B BDX33B
BDX34C

Abstract: BOX34 BDX34B transistor BDX34 65 AIR LB 8DX34A
Text: BDX34, BDX34A, BDX34B , BDX34C, BDX34D PNP SIUCON POWER DARLINGTONS Copyright ® 1997. Power , with BDX33, BDX33A, BDX33B, BDX33C and BDX33D 70 W at 25°C Case Temperature B C T0-220 PACKAGE (TOP , temperature (unless otherwise noted) RATING BDX34 8DX34A CoKector-base voltage (lg = 0) BDX34B BDX34C BDX34D BDX34 BDX34A Coilector-emitter voltage (Ig = 0) BDX34B BDX34C BDX34D Emitter-base voftage Continuous , . Derate Hnearty to 1SO^C case temperature at the rate of 0.56 W /C C. 2. Derate Jlnearly to 150°C free air


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PDF BDX34, BDX34A, BDX34B, BDX34C, BDX34D BDX33, BDX33A, BDX33B, BDX33C BDX33D BDX34C BOX34 BDX34B transistor BDX34 65 AIR LB 8DX34A
2002 - Not Available

Abstract: No abstract text available
Text: Build-In Base-Emitter Shunt resistors TO-220AB Compact Package BDX34B * BDX34C *ON Semiconductor , MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB BDX33B BDX34B 80 80 BDX33C BDX34C 100 100 Unit Vdc Vdc , 0.56 Watts W /_C _C Operating and Storage Junction Temperature Range TJ, Tstg ­ 65 to + 150 , / W Preferred devices are ON Semiconductor recommended choices for future use and best overall , Publication Order Number: BDX33B/D BDX33B BDX33C BDX34B BDX34C 80 PD, POWER DISSIPATION (WATTS) 60


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PDF BDX33B BDX33C* BDX33B, BDX33C, 33C/34B, O-220AB BDX34B BDX34C
1995 - R/TRANSISTOR box 34c

Abstract: BDX33B BDX33C BDX34B BDX34C
Text: BDX33C* Darlington Complementary Silicon Power Transistors PNP BDX34B * BDX34C . . . , MAXIMUM RATINGS Symbol BDX33B BDX34B BDX33C BDX34C Unit VCEO 80 100 Vdc , Dissipation @ TC = 25_C Derate above 25_C PD 70 0.56 Watts W /_C ­ 65 to + 150 _C Rating , Max 1.78 _C/ W PD, POWER DISSIPATION (WATTS) 80 60 40 20 0 0 20 40 , BDX33B/ BDX34B BDX33C/BDX34C Collector­Emitter Sustaining Voltage1 (IC = 100 mAdc, IB = 0, VBE = 1.5


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PDF BDX33B/D BDX33B BDX33C* BDX34B BDX34C BDX33B, BDX33C, 33C/34B, 220AB R/TRANSISTOR box 34c BDX33B BDX33C BDX34B BDX34C
1995 - box 34b

Abstract: Box 34C BDX33B BDX33C BDX34B BDX34C BDX33C MOTOROLA
Text: BDX33C* Darlington Complementary Silicon Power Transistors PNP BDX34B BDX34C* . . . , MAXIMUM RATINGS Symbol BDX33B BDX34B BDX33C BDX34C Unit VCEO 80 100 Vdc , Dissipation @ TC = 25_C Derate above 25_C PD 70 0.56 Watts W /_C ­ 65 to + 150 _C Rating , Max 1.78 _C/ W PD, POWER DISSIPATION (WATTS) 80 60 40 20 0 0 20 40 , BDX33B/ BDX34B BDX33C/BDX34C Collector­Emitter Sustaining Voltage1 (IC = 100 mAdc, IB = 0, VBE = 1.5


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PDF BDX33B/D BDX33B BDX33C* BDX34B BDX34C* BDX33B, BDX33C, 33C/34B, 220AB box 34b Box 34C BDX33B BDX33C BDX34B BDX34C BDX33C MOTOROLA
BOX34B

Abstract: BDX34 equivalent 92G9-2274 BDX34C BDX34B 337505 BDX34 BDX33D BDX33C BDX33A
Text: 17286 D T-ìf-ìt BDX34, BDX34A, BDX34B , BDX34C, BDX34D File Number 694 10-Ampere P-N-P Darlington , A ( BDX34B , BDX34C, BDX34D) Feature«: Applications: ■Operates Irom IC without predriver â , , BDX34A, BDX34B , BDX34C, and BDX34D are monolithic p-n-p silicon Darlington transistors designed for , . Tl At distances > 1/8 in. (3.17 mm) from case for 10 s max. bdx34 bdx34a bdx34b bdx34c , . -10 A _ -0 25 A 7n t i W Derate linearly 0.56 w /°c -fiS to+150 °c 235


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PDF BDX34, BDX34A, BDX34B, BDX34C, BDX34D 10-Ampere BDX34A) BOX34B BDX34 equivalent 92G9-2274 BDX34C BDX34B 337505 BDX34 BDX33D BDX33C BDX33A
1993 - BDX34

Abstract: BDX34C BDX34B BDX34A BDX33 BDX33D BDX33C BDX33B BDX33A BDX34D
Text: BDX34, BDX34A, BDX34B , BDX34C, BDX34D PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D 70 W at 25°C Case Temperature 10 , BDX34A BDX34B V CBO -80 BDX34C -120 BDX34 V -100 BDX34D -45 -60 BDX34A Collector-emitter voltage (IB = 0) UNIT -45 BDX34 Collector-base voltage (IE = 0) VALUE BDX34B , below) 25°C case temperature (see Note 1) Ptot 70 W Continuous device dissipation at (or


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PDF BDX34, BDX34A, BDX34B, BDX34C, BDX34D BDX33, BDX33A, BDX33B, BDX33C BDX33D BDX34 BDX34C BDX34B BDX34A BDX33 BDX33D BDX33B BDX33A BDX34D
BDX34B

Abstract: bdx33c BDX34C
Text: resistors TO-220AB Compact Package BDX33B 00X330* PNP NPN BDX34B BDX34C* 'Motorola Preferred D , above 25° C Operating and Storage Junction Temperature Range Symbol VCEO VCB V eb BDX33B BDX34B 80 80 , DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 8 0 -1 0 0 VOLTS 70 WATTS 'c 'B Pd w /°c , Case Symbol r 8JC Max 1.78 Unit °C/ W 0I 0 - N -I 20 40 60 80 , Bipolar Power Transistor Device Data BDX33B BDX33C BDX34B BDX34C ELECTRICAL CHARACTERISTICS (Tc - 25


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PDF BDX33B, BDX33C, 33C/34B, O-220AB BDX33B 00X330* BDX34B BDX34C* BDX33B bdx33c BDX34C
2000 - transistor bdx54

Abstract: BDX34 BDX34BTU
Text: Symbol VCBO Parameter Collector-Base Voltage : BDX34 : BDX34A : BDX34B : BDX34C VCEO Collector-Emitter Voltage : BDX34 : BDX34A : BDX34B : BDX34C Collector Current (DC) *Collector Current (Pulse) Base Current , - 100 - 10 - 15 - 0.25 70 150 - 65 ~ 150 V V V V V V V V A A A W °C °C Value Units IC ICP IB PC , Sustaining Voltage : BDX34 : BDX34A : BDX34B : BDX34C * Collector-Emitter Sustaining Voltage : BDX34 : BDX34A : BDX34B : BDX34C * Collector-Emitter Sustaining Voltage : BDX34 : BDX34A : BDX34B : BDX34C Collector


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PDF BDX34/A/B/C BDX33/33A/33B/33C O-220 BDX34 BDX34A BDX34B BDX34C transistor bdx54 BDX34 BDX34BTU
1998 - BDX33C

Abstract: BDX33B BDX34B BDX34C
Text: BDX33B BDX33C BDX34B BDX34C ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s , BDX34B and BDX34C respectively. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 K , PNP BDX34B BDX34C V CBO Collector-Base Voltage (IE = 0) 80 100 V CEO , stg Storage Temperature Tj V Max. O perating Junction Temperature A 70 W -65 , . October 1998 1/4 BDX33B BDX33C BDX34B BDX34C THERMAL DATA R t hj-ca se Thermal Resistance


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PDF BDX33B BDX33C BDX34B BDX34C BDX33C O-220 BDX34B BDX34C O-220
diagram DARLINGTON

Abstract: DX34C BDX34 equivalent DX34
Text: _._ BDX34, BDX34A, BDX34B , BDX34C, BDX34D File Number 694 10-Ampere P-N-P Darlington Power Transistors 4 5 -6 0 -8 0 -1 0 0 -1 2 0 Volts, 70 W atts G ain of 750 at 4 A (B D X 34, B D X34A) G ain of 750 a t 3 A (B D X34B , B D X 34C , B D X 34D ) Features: Applications: Operates iro m 1C w ith o u t p re d riv e r P ow er sw itch in g · L o w leakage a t h ig h tem perature H am m er drivers · , TOP VIEW U C 9 -3 I» ) JEOEC TO-220AB Qc The BDX34, BDX34A, BDX34B , BDX34C, and BDX34D are m o n


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PDF BDX34, BDX34A, BDX34B, BDX34C, BDX34D 10-Ampere 3A75DA1 diagram DARLINGTON DX34C BDX34 equivalent DX34
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