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BDX334

Abstract: bdy37a BD649 BD795 BD796 bu208 BD798 BD799 BD800 BDY56
Text: 20 TÖ220 T0220 T0220 T0220 BDX33D BDX334 BDX34A BDX34B NPN PNP PNP PNP 70.0 70.0 70.0 70.0 10.0


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PDF DB5a35M 0QDD053 BD645 BD647 BD649 BD795 T0220 T0220 BDX334 bdy37a BD796 bu208 BD798 BD799 BD800 BDY56
2011 - 33c marking

Abstract: BDX33BG box 34b BDX334B BDX33CG BDX334
Text: BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features http://onsemi.com · High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 · Collector-Emitter Sustaining Voltage at 100 mAdc · · · VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B = 100 Vdc (min) - BDX33C, BDX334C Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc - BDX33B, 33C/34B, 34C Monolithic


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PDF BDX33B, BDX33C BDX34B, BDX34C BDX334B BDX33C, BDX334C 33C/34B, 33c marking BDX33BG box 34b BDX334B BDX33CG BDX334
2007 - BDX33CG

Abstract: BDX33BG BDX334 BDX334B BDX33C Box 34C BDX334C BDX34C BDX34B BDX33B
Text: BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features ·High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 ·Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B = 100 Vdc (min) - BDX33C, BDX334C ·Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc -


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PDF BDX33B, BDX33C* BDX34B, BDX34C* BDX33C BDX34C BDX334B BDX33C, BDX334C BDX33CG BDX33BG BDX334 BDX334B Box 34C BDX334C BDX34B BDX33B
2006 - BDX34C

Abstract: 10 amp pnp darlington power transistors BDX33CG BDX33C BDX34CG BDX33B BDX34B marking 33c diode
Text: BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features · High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 · Collector-Emitter Sustaining Voltage at 100 mAdc · · · VCEO(sus) = 80 Vdc (min) - BDX33B, BDX334B = 100 Vdc (min) - BDX33C, BDX334C Low Collector-Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0


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PDF BDX33B, BDX33C* BDX34B, BDX34C* BDX33C BDX34C BDX334B BDX33C, BDX334C 10 amp pnp darlington power transistors BDX33CG BDX34CG BDX33B BDX34B marking 33c diode
2011 - BDX33C

Abstract: No abstract text available
Text: BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc • • • VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C Low Collector−Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc − BDX33B


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PDF BDX33B, BDX33C BDX34B, BDX34C BDX334B BDX33C, BDX334C 33C/34B, BDX33C
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