The Datasheet Archive

BDW84C datasheet (19)

Part Manufacturer Description Type PDF
BDW84C Bourns PNP SILICON POWER DARLINGTONS - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=15 / Hfe=750-20k / fT(Hz)=1M / Pwr(W)=150 Original PDF
BDW84C Central Semiconductor Leaded Power Transistor Darlington Original PDF
BDW84C Power Innovations TRANS DARLINGTON PNP 100V 15A 3SOT-93 - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=15 / Hfe=750-20k / fT(Hz)=1M / Pwr(W)=150 Original PDF
BDW84C Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=15 / Hfe=750-20k / fT(Hz)=1M / Pwr(W)=150 Original PDF
BDW84C STMicroelectronics Complementary Silicon Power Darlington Transistor Original PDF
BDW84C STMicroelectronics COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=15 / Hfe=750-20k / fT(Hz)=1M / Pwr(W)=150 Original PDF
BDW84C Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
BDW84C Others Semiconductor Master Cross Reference Guide Scan PDF
BDW84C Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BDW84C Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BDW84C Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BDW84C Others Shortform Transistor PDF Datasheet Scan PDF
BDW84C Others Transistor Replacements Scan PDF
BDW84C Others Cross Reference Datasheet Scan PDF
BDW84C Others Cross Reference Datasheet Scan PDF
BDW84C Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan PDF
BDW84C Transys Electronics BJT, PNP, Darlington Power Transistor, IC 15A - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=15 / Hfe=750-20k / fT(Hz)=1M / Pwr(W)=150 Scan PDF
BDW84C-S Bourns PNP DARLINGTON 100V 15A Original PDF
BDW84C-S Bourns Transistors (BJT) - Single, Discrete Semiconductor Products, PNP DARLINGTON 100V 15A Original PDF

BDW84C Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1978 - TRANSISTOR Bdw84d

Abstract:
Text: BDW84, BDW84A, BDW84B, BDW84C , BDW84D PNP SILICON POWER DARLINGTONS G Designed for , ) RATING BDW84 BDW84A Collector-base voltage (IE = 0) BDW84B BDW84C BDW84D BDW84 BDW84A Collector-emitter voltage (IB = 0) (see Note 1) BDW84B BDW84C BDW84D Emitter-base voltage Continuous collector current , . BDW84, BDW84A, BDW84B, BDW84C , BDW84D PNP SILICON POWER DARLINGTONS electrical characteristics at 25 , breakdown voltage BDW84A IC = -30 mA IB = 0 (see Note 5) BDW84B BDW84C BDW84D VCE = -30 V ICEO


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PDF BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D TRANSISTOR Bdw84d bdw84 BDW84C
1978 - BDW84

Abstract:
Text: BDW84, BDW84A, BDW84B, BDW84C , BDW84D PNP SILICON POWER DARLINGTONS Designed for , CBO -80 BDW84C -120 BDW84 -45 -60 BDW84A BDW84B VCEO -80 V -100 BDW84C -120 BDW84D VEBO Continuous collector current Continuous base current Continuous , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW84, BDW84A, BDW84B, BDW84C , = -30 mA IB = 0 (see Note 5) MAX -80 BDW84C -100 -120 V VCE = -30 V ICEO


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PDF BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D BDW84 BDW84A BDW83 BDW83D BDW83B BDW83A BDW84B BDW84C BDW84D
BDW84C

Abstract:
Text: -80 BDW84C -45 BDW84A Collector-emitter voltage -120 BDW84 -60 BDW84B Open base -80 BDW84C Emitter-base voltage V -100 BDW84D VEBO V -100 BDW84D , BDW84C -100 BDW84D -120 VCEsat-1 Collector-emitter saturation voltage IC=-6A ,IB , cut-off current BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B VCE=-40V, IB=0 VCE=-50V, IB=0 BDW84D Collector cut-off current VCE=-30V, IB=0 BDW84C ICEO VCE=-30V, IB=0 VCE


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PDF BDW84/84A/84B/84C/84D BDW83/83A/83B/83C/83D BDW84 BDW84A BDW84B BDW84C BDW84C BDW84 BDW84B BDW84A BDW84D DIODE 84A
1978 - bdw84

Abstract:
Text: BDW84, BDW84A, BDW84B, BDW84C , BDW84D PNP SILICON POWER DARLINGTONS G Designed for , O S B O BDW84C BDW84D BDW84 BDW84A BDW84B VCEO BDW84C BDW84D VEBO IC IB Ptot Ptot Tj ½LIC2 Tstg TA , , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature , BDW84A IC = -30 mA IB = 0 (see Note 5) BDW84B BDW84C BDW84D VCE = -30 V ICEO Collector-emitter cut-off , °C TC = 150°C TC = 150°C BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D BDW84


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PDF BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D bdw84 TRANSISTOR Bdw84d BDW84C
1978 - TRANSISTOR Bdw84d

Abstract:
Text: BDW84, BDW84A, BDW84B, BDW84C , BDW84D PNP SILICON POWER DARLINGTONS G Designed for , -60 VCBO -80 BDW84C -120 BDW84 -45 BDW84A BDW84B -60 VCEO BDW84C -80 , are subject to change without notice. 1 BDW84, BDW84A, BDW84B, BDW84C , BDW84D PNP SILICON , ) MAX -80 BDW84C -100 V -120 VCE = -30 V ICEO Collector-emitter cut-off current , -1 VCE = -50 V IB = 0 BDW84C -1 VCE = -60 V -0.5 BDW84B -0.5 IE = 0


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PDF BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D TRANSISTOR Bdw84d BDW84 BDW83B BDW83D BDW83A BDW84A BDW84B BDW84C BDW84D
1978 - Power Innovations

Abstract:
Text: BDW84, BDW84A, BDW84B, BDW84C , BDW84D PNP SILICON POWER DARLINGTONS Copyright © 1997, Power , -80 BDW84C BDW84D V -100 -120 BDW84 -45 BDW84A Collector-emitter voltage (IB = 0 , BDW84C -80 V -100 BDW84D -120 V EBO -5 V Continuous collector current IC , processing does not necessarily include testing of all parameters. 1 BDW84, BDW84A, BDW84B, BDW84C , Collector-emitter BDW84A IC = -30 mA IB = 0 (see Note 5) breakdown voltage MAX -80 BDW84C


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PDF BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D Power Innovations BDW84C BDW84 BDW83D BDW83B BDW84A BDW84B BDW83A BDW84D
1978 - BDW84

Abstract:
Text: BDW84, BDW84A, BDW84B, BDW84C , BDW84D PNP SILICON POWER DARLINGTONS Designed for , CBO -80 BDW84C -120 BDW84 -45 -60 BDW84A BDW84B VCEO -80 V -100 BDW84C -120 BDW84D VEBO Continuous collector current Continuous base current Continuous , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW84, BDW84A, BDW84B, BDW84C , = -30 mA IB = 0 (see Note 5) MAX -80 BDW84C -100 -120 V VCE = -30 V ICEO


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PDF BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D BDW84 BDW84C BDW84B BDW84A BDW83 BDW83D BDW83B BDW83A BDW84D
BDW84C

Abstract:
Text: BDW84, BDW84A, BDW84B, BDW84C , BDW84D PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , ) RATING BDW84 BDW 84A Collector-base voltage ( lE = 0) BDW84B BDW84C BDW84D BDW84 BDW 84A Collector-em itter voltage ( lB = 0) (see Note 1) BDW84B BDW84C BDW84D Em itter-base voltage Continuous collector , not necessarily include testing of all parameters. BDW84, BDW84A, BDW84B, BDW84C , BDW84D PNP , -45 -60 -80 TYP MAX UNIT BDW 84A -30 mA lR = 0 (see Note 5) BDW84B BDW84C BDW84D > -30 V


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PDF BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D BDW84C
BDW84C

Abstract:
Text:  IRANSYS CUCTMNICS LIMITED BDW84, BDW84A, BDW84B, BDW84C , BDW84D PNP SILICON POWER , BDW84 -45 BDW84A -60 Collector-base voltage (lE = 0) BDW84B VCBO -80 V BDW84C -100 BDW84D , BDW84C -100 BDW84D -120 Emitter-base voltage VEBO -5 V Continuous collector current lc -15 A , Q, Vcc = -20 V. BDW84, BDW84A, BDW84B, BDW84C , BDW84D PNP SILICON POWER DARLINGTONS electrical , Collector-emitter (br)ceo breakdown voltage -30 mA » = 0 (see Note 5) BDW84 BDW84A BDW84B BDW84C BDW84D


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PDF BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D BDW84C BDW84B BDW83 BDW84A BDW84 BDW83D BDW83B BDW83A BDW84D
1997 - BDW83C

Abstract:
Text: complementary type is BDW84C. TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol , BDW83C BDW84C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s s BDW83C IS A , Junction Temperature Valu e BDW83C BDW84C 100 100 5 15 40 0.5 130 -65 to 150 150 Uni t V V V A A A W o C o C 1/4 BDW83C / BDW84C THERMAL DATA R t hj-ca se Thermal , 6 V µs µs BDW83C / BDW84C TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch


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PDF BDW83C BDW84C BDW83C O-218 BDW84C. O-218 BDW84C BDW83
1997 - BDW83C

Abstract:
Text: applications. The complementary type is BDW84C. TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM , BDW83C BDW84C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s s BDW83C IS A , . Operating Junction Temperature Value BDW83C BDW84C 100 100 5 15 40 0.5 130 -65 to 150 150 Unit V V V A A A W o C o C 1/4 BDW83C / BDW84C THERMAL DATA R thj-case Thermal , V µs µs BDW83C / BDW84C TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN. inch TYP


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PDF BDW83C BDW84C BDW83C O-218 BDW84C. O-218 BDW84C COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS SILICON COMPLEMENTARY transistors darlington
BDW84

Abstract:
Text: Collector-emitter voltage BDW84C BDW84D -120 BDW84 -45 -60 BDW84B Open base -80 BDW84C , -80 BDW84C -100 BDW84D -120 VCEsat-1 Collector-emitter saturation voltage IC , ICBO Collector cut-off current BDW84B BDW84C BDW84D OND IC SEM GE BDW84 VCE=-30V, IB=0 BDW84A VCE=-30V, IB=0 BDW84B VCE=-40V, IB=0 BDW84C VCE=-50V, IB


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PDF BDW84/84A/84B/84C/84D BDW83/83A/83B/83C/83D BDW84 BDW84B BDW84C BDW84D BDW84 BDW84D BDW84A BDW84C DIODE 84A bdw84b Darlington Transistors
2002 - bdw84c

Abstract:
Text: switching applications. The complementary type is BDW84C. TO-218 INTERNAL SCHEMATIC DIAGRAM , BDW83C BDW84C ® COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s s , Storage Temperature Max. Operating Junction Temperature December 2002 Value BDW83C BDW84C 100 , / BDW84C THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 0.96 C/W , Time Turn-off Time 750 100 4 0.9 6 V µs µs BDW83C / BDW84C TO-218 (SOT


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PDF BDW83C BDW84C BDW83C O-218 BDW84C. O-218 bdw84c SILICON COMPLEMENTARY transistors darlington
BDW83C

Abstract:
Text: applications. The complementary type is BDW84C. TO-218 ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V cb O V cë O V ebo Value BDW83C BDW84C 100 100 5 15 40 0.5 130 -65 to 150 150 Unit C , Üji SCS-THOMSON itL d © T T l^ @ ® a D © S BDW83C BDW84C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS BDW83C IS A SGS-THOMSON PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES . HIGH , June 1997 1/2 171 BDW83C / BDW84C THERMAL DATA "uhj-case Therm al R esistance Junction-case


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PDF BDW83C BDW84C O-218 BDW84C. O-218 darlington bdw84c BDW84C
BDW 65 C

Abstract:
Text: for use in power linear and switching applications. The complementary type is BDW84C. INTERNAL , SGS-THOMSON BDW83C BDW84C RfflDeiE!BDW83C IS A SGS-THOMSON PREFERRED SALESTYPE . COMPLEMENTARY PNP , . Operating Junction Tem perature A -65 to 150 °C 150 °c 1/4 BDW83C / BDW84C THERMAL , V 0.9 |XS 6 |XS BDW83C / BDW84C TO-218 (SOT-93) MECHANICAL DATA mm DIM. MIN


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PDF BDW83C BDW84C BDW83C O-218 BDW84C. O-218 OT-93) BDW 65 C
2009 - TIC106M SCR

Abstract:
Text: BDW84C BDW84D -2 -2 -2 -4 -4 -4 -5 -6 -6 -8 -8 -8 -8 -8 -8 -8 -8 -8 -10 -10 -10 , BDW74D TIP135 TIP136 TIP137 BDX34B BDX34C BDX34D TIP147 BDV64C BDW94B BDW94C BDW84B BDW84C , BDW84B BDW84C BDW84D BDW93 BDW93A BDW93B BDW93C BDW94 BDW94A BDW94B BDW94C BDX33 BDX33A , BDW83C BDW83C BDW83C BDW83C BDW83D BDW84C BDW84C BDW84C BDW84C BDW84D BDW93C BDW93C BDW93C


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PDF O-220, OT-93 2M/TSP0904 TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC116D equivalent TIC126D equivalent
BDW83C

Abstract:
Text: PNP BDW84C PNP SILICON DARLINGTONS POWER TRANSISTORS The BDW84C is silicon epitaxial-base PNPpower monolithic Darlington transistor mounted in Jedec TO-218 plastic package. It is intended for use in power linear and switching applications. The complementary is BDW83C. ABSOLUTE MAXIMUM RATINGS Symbol -VCEO -VCBO -VEBO -IC -ICM -IB Pt TJ TStg Ratings tp = 10ms @ TC = 40° 100 100 , 2.5 4 2.5 4 1/2 mA mA V V PNP BDW84C Symbol Ratings Test Condition(s)Sec Min


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PDF BDW84C BDW84C O-218 BDW83C. O-218) BDW83C
diode AE 84A

Abstract:
Text: *80 BDW84, BDW84A, BDW84B, BDW84C. BDW84D PNP SILICON POWER DARLINGTONS AU G U ST 1978 - R E V IS , voltage {lg = 0) (see Note 1) BDW84A BDW 04B BDW84C BDWB4D Emitter-base voltage Continuous collector , BDW84, BDW84A, BDW84B, BDW84C , BDW84D PHP SILICON POWER DARLINGTONS A U G U ST 1978 - R E V IS E D M A


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PDF BDW84, BDW84A, BDW84B, BOW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D diode AE 84A BOW84C BDW 65 C BOW84 TRANSISTOR Bdw84d
2008 - TIC106D equivalent

Abstract:
Text: BDW84C BDW84D -2 -2 -2 -4 -4 -4 -5 -6 -6 -8 -8 -8 -8 -8 -8 -8 -8 -8 -10 -10 -10 , BDW74D TIP135 TIP136 TIP137 BDX34B BDX34C BDX34D TIP147 BDV64C BDW94B BDW94C BDW84B BDW84C , BDW84B BDW84C BDW84D BDW93 BDW93A BDW93B BDW93C BDW94 BDW94A BDW94B BDW94C BDX33 BDX33A , BDW83C BDW83C BDW83C BDW83C BDW83D BDW84C BDW84C BDW84C BDW84C BDW84D BDW93C BDW93C BDW93C


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PDF O-220, OT-93 2M/TSP0711 TIC106D equivalent TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
2002 - BDW84C

Abstract:
Text: BDW84C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. Bipolar PNP Device. VCEO = 100V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 15A 7.92 (0.312) 12.70 (0.50) All Semelab


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PDF BDW84C O204AA) 31-Jul-02 BDW84C
BDV65, BDV64

Abstract:
Text: 2.5 6.0 . bdw83c bdw84c 15 130 100 100 750 20,000 6.0 3.0 2.5 6.0 . tip33a tip34a 10 80 60 60 20


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PDF O-218 bdv65 bdv64 bdv65a bdv64a bdv65b bdv64b bdw83a bdw84a bdw83b BDV65, BDV64 TIP-1 tip142 TIP3055 DARLINGTON TRANSISTORS
TIP142

Abstract:
Text: Device type VCEO m VcBO VCES VCFV le [Al Plot fwi hft @ ICVCE VcEfsal} @ lc IB Appli cation NPN I PNP m Min TBI I m I m [V] [A] ina TIP145 60 60 10 125 1000 5 4 3 10 40 Gen. purp. TIP305S TIP29S5 60 70 15 90 20 4 4 1.1 4 400 Gen. purp. BUW4Í 60 120 30 150 1.4 40 4000 Gen, purp, SGSD100 SGSD200 80 80 25 130 300 20 3 1.75 10 40 Gen. purp. BUW49 80 160 30 150 1.2 30 3000 Gen. purp. TIP142 TIP147 100 100 10 125 1000 5 4 2 5 10 Gen. purp. BDW83C BDW84C 100 100 15 130 750 20000


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PDF TIP145 TIP305S TIP29S5 SGSD100 SGSD200 BUW49 TIP142 TIP147 BDW83C BDW84C BUTW92 TIP36C S-603 BUW49 buf420aw BU941ZP
tip142/TIP147 AMPLIFIER CIRCUIT

Abstract:
Text: 6.0 - BDW83C BDW84C 15 130 100 100 750 20,000 6.0 3.0 2.5 6.0


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PDF O-218 BDV64B BDW83A BDW84A BDW83B BDW84B BDW83C BDW84C TIP33A TIP34A tip142/TIP147 AMPLIFIER CIRCUIT tip141 equivalent TIP35C EQUIVALENT BDV65, BDV64 TIP3055 DARLINGTON TRANSISTORS BDW83C BDW83B BDW83A BDV65B BDV65A
tip142/TIP3055

Abstract:
Text: 2.5 6.0 — BDW83C BDW84C 15 130 100 100 750 20,000 6.0 3.0 2.5 6.0 . TIP33A TIP34A 10 80 60 60 20


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PDF O-218 BDV65 BDV64 BDV65A BDV64A BDV65B BDV64B BDW83A BDW84A BDW83B tip142/TIP3055 BDW83C BDV65, BDV64 TIP35C TIP36C
2002 - Not Available

Abstract:
Text: BDW84C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 100V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 15A All Semelab hermetically sealed products can


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PDF BDW84C O204AA) 16-Jul-02
Supplyframe Tracking Pixel