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BDW84 datasheet (73)

Part Manufacturer Description Type PDF
BDW84 Bourns PNP SILICON POWER DARLINGTONS - Pol=PNP / Pkg=TO3 / Vceo=45 / Ic=15 / Hfe=750-20k / fT(Hz)=1M / Pwr(W)=150 Original PDF
BDW84 Power Innovations PNP SILICON POWER DARLINGTON Original PDF
BDW84 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=45 / Ic=15 / Hfe=750-20k / fT(Hz)=1M / Pwr(W)=150 Original PDF
BDW84 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
BDW84 Others Semiconductor Master Cross Reference Guide Scan PDF
BDW84 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BDW84 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BDW84 Others Transistor Replacements Scan PDF
BDW84 Others Shortform Transistor PDF Datasheet Scan PDF
BDW84 Others Cross Reference Datasheet Scan PDF
BDW84 Others Diode, Transistor, Thyristor Datasheets and more Scan PDF
BDW84 Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan PDF
BDW84 Transys Electronics BJT, PNP, Darlington Power Transistor, IC 15A - Pol=PNP / Pkg=TO3 / Vceo=45 / Ic=15 / Hfe=750-20k / fT(Hz)=1M / Pwr(W)=150 Scan PDF
BDW84A Bourns PNP SILICON POWER DARLINGTONS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=750-20k / fT(Hz)=1M / Pwr(W)=150 Original PDF
BDW84A Central Semiconductor Leaded Power Transistor Darlington Original PDF
BDW84A Power Innovations PNP SILICON POWER DARLINGTON Original PDF
BDW84A Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=750-20k / fT(Hz)=1M / Pwr(W)=150 Original PDF
BDW84A Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
BDW84A Others Semiconductor Master Cross Reference Guide Scan PDF
BDW84A Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF

BDW84 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BDW84C

Abstract: BDW84 BDW84B BDW84A DIODE 84A BDW84D
Text: cut-off current BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B VCE=-40V, IB=0 VCE=-50V, IB , VALUE BDW84 VCBO Collector-base voltage -45 BDW84A -60 BDW84B Open emitter -80 BDW84C -45 BDW84A Collector-emitter voltage -120 BDW84 -60 BDW84B Open base -80 BDW84C Emitter-base voltage V -100 BDW84D VEBO V -100 BDW84D , breakdown voltage MAX UNIT -45 BDW84A TYP. -60 BDW84B IC=-30mA, IB=0 V -80


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PDF BDW84/84A/84B/84C/84D BDW83/83A/83B/83C/83D BDW84 BDW84A BDW84B BDW84C BDW84C BDW84 BDW84B BDW84A DIODE 84A BDW84D
1978 - TRANSISTOR Bdw84d

Abstract: BDW84C bdw84
Text: BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS G Designed for , ) RATING BDW84 BDW84A Collector-base voltage (IE = 0) BDW84B BDW84C BDW84D BDW84 BDW84A Collector-emitter , . BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS electrical characteristics at 25 , -3.5 V V V TC = 150°C TC = 150°C TC = 150°C TC = 150°C TC = 150°C BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D MIN -45 -60 -80 -100 -120 -1 -1 -1


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PDF BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D TRANSISTOR Bdw84d BDW84C bdw84
1978 - BDW84

Abstract: BDW84A BDW83 BDW83C BDW83D BDW83B BDW83A BDW84B BDW84C BDW84D
Text: BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS Designed for , Specifications are subject to change without notice. BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER , notice. 3 BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS MAXIMUM SAFE , SAS145AB -10 -1·0 BDW84 BDW84A BDW84B BDW84C BDW84D -0·1 -1·0 -10 -100 -1000 VCE - , CBO -80 BDW84C -120 BDW84 -45 -60 BDW84A BDW84B VCEO -80 V -100


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PDF BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D BDW84 BDW84A BDW83 BDW83D BDW83B BDW83A BDW84B BDW84C BDW84D
1978 - TRANSISTOR Bdw84d

Abstract: bdw84 BDW84C BDW83d
Text: BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS G Designed for , O S B O BDW84C BDW84D BDW84 BDW84A BDW84B VCEO BDW84C BDW84D VEBO IC IB Ptot Ptot Tj ½LIC2 Tstg TA , °C TC = 150°C TC = 150°C BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 , Specifications are subject to change without notice. BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER , Specifications are subject to change without notice. BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER


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PDF BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D TRANSISTOR Bdw84d bdw84 BDW84C
1978 - BDW83C

Abstract: BDW84 BDW84C Power Innovations BDW83 BDW83A BDW84D BDW83D BDW84A BDW84B
Text: BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS Copyright © 1997, Power , . PRODUCT 2 INFORMATION TYP 0.9 µs 7 µs BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP , -100 SAS145AB -10 -1·0 BDW84 BDW84A BDW84B BDW84C BDW84D -0·1 -1·0 -10 -100 , 4 INFORMATION 125 150 BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER , MDXXAW BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS AUGUST 1978 - REVISED


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PDF BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D BDW84 BDW84C Power Innovations BDW83 BDW83A BDW84D BDW83D BDW84A BDW84B
BDW84C

Abstract: BDW84D
Text: BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , not necessarily include testing of all parameters. BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP , INNOVATIONS BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS AUG UST 1978 - REVISED , PRODUCT INFORMATION 4 BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS AUG , BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS AUG UST 1978 - REVISED MARCH 1997


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PDF BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D BDW84C
1978 - TRANSISTOR Bdw84d

Abstract: BDW84 BDW83B BDW83C BDW83D BDW83A BDW84A BDW84B BDW84C BDW84D
Text: BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS G Designed for , are subject to change without notice. 1 BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON , notice. BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS TYPICAL , BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS , 2011 Specifications are subject to change without notice. BDW84 , BDW84A , BDW84B , BDW84C , BDW84D


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PDF BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D TRANSISTOR Bdw84d BDW84 BDW83B BDW83D BDW83A BDW84A BDW84B BDW84C BDW84D
1978 - BDW84

Abstract: BDW84C BDW84B BDW84A BDW83D BDW83C BDW83B BDW83A BDW83 BDW84D
Text: BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS Designed for , Specifications are subject to change without notice. BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER , notice. 3 BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS MAXIMUM SAFE , SAS145AB -10 -1·0 BDW84 BDW84A BDW84B BDW84C BDW84D -0·1 -1·0 -10 -100 -1000 VCE - , CBO -80 BDW84C -120 BDW84 -45 -60 BDW84A BDW84B VCEO -80 V -100


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PDF BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D BDW84 BDW84C BDW84B BDW84A BDW83D BDW83B BDW83A BDW83 BDW84D
BDW84C

Abstract: BDW84B BDW83 BDW84A BDW84 BDW83D BDW83C BDW83B BDW83A BDW84D
Text:  IRANSYS CUCTMNICS LIMITED BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER , BDW84 -45 BDW84A -60 Collector-base voltage (lE = 0) BDW84B VCBO -80 V BDW84C -100 BDW84D , Q, Vcc = -20 V. BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PNP SILICON POWER DARLINGTONS electrical , Collector-emitter (br)ceo breakdown voltage -30 mA » = 0 (see Note 5) BDW84 BDW84A BDW84B BDW84C BDW84D , -30 V -40 V -50 V -60 V lB = 0 lB = 0 lB = 0 lB = 0 lB = 0 BDW84 BDW84A BDW84B BDW84C BDW84D -1


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PDF BDW84, BDW84A, BDW84B, BDW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D BDW84C BDW84B BDW83 BDW84A BDW84 BDW83D BDW83B BDW83A BDW84D
diode AE 84A

Abstract: BOW84C TRANSISTOR Bdw84d BDW 65 C BOW84
Text: *80 BDW84 , BDW84A , BDW84B , BDW84C. BDW84D PNP SILICON POWER DARLINGTONS AU G U ST 1978 - R E V IS , BDW84 , BDW84A , BDW84B , BDW84C , BDW84D PHP SILICON POWER DARLINGTONS A U G U ST 1978 - R E V IS E D M A , BDW84 , BDW84A , BDW84B , BOW84C, BDW84D PNP SILICON POWER DARLINGTONS Copyright © 1987, Power , . INNOVATI ONS » 3-79 BDW84 , BDW84A , BDW84B , BOW84C, BDW84D PNP SILICON POWER DARL1NGTONS A U G U ST , BDW 04D BDW84 BDW84A BDW 84B BDW 84C BDW84D BDW84 BDW84A BDW 84B BDW 84C Tc = 150'C Tc = 150*C Tc =


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PDF BDW84, BDW84A, BDW84B, BOW84C, BDW84D BDW83, BDW83A, BDW83B, BDW83C BDW83D diode AE 84A BOW84C TRANSISTOR Bdw84d BDW 65 C BOW84
BDW84

Abstract: BDW84D BDW84A BDW84C DIODE 84A bdw84b Darlington Transistors
Text: CONDITIONS DUC ICON BDW84 SEM E BDW84B ANG Open emitter -60 -80 VCEO Collector-emitter voltage BDW84C BDW84D -120 BDW84 -45 -60 BDW84B Open base -80 BDW84C Emitter-base voltage V -100 BDW84D VEBO V -100 BDW84A INCH UNIT -45 BDW84A , ICBO Collector cut-off current BDW84B BDW84C BDW84D OND IC SEM GE BDW84 VCE=-30V, IB=0 BDW84A VCE=-30V, IB=0 BDW84B VCE=-40V, IB=0 BDW84C VCE=-50V, IB


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PDF BDW84/84A/84B/84C/84D BDW83/83A/83B/83C/83D BDW84 BDW84B BDW84C BDW84D BDW84 BDW84D BDW84A BDW84C DIODE 84A bdw84b Darlington Transistors
2001 - TO276AB

Abstract: 4MHZ
Text: part, please contact us. Search Results Part number search for devices beginning " BDW84 " Semelab Home Datasheets are downloaded as Acrobat PDF files. Bipolar Products PRODUCT BDW84 BDW84A BDW84B BDW84C BDW84D Polarity PNP PNP PNP PNP PNP Package TO3 TO3 TO3 TO3 TO3 VCEO 45V 60V 80V 100V 120V


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PDF BDS28" BDS28A BDS28ASMD BDS28ASMD-JQR-B BDS28B BDS28BSMD BDS28BSMD-JQR BDS28CSMD BDS28CSMD-JQR-B O276AB) TO276AB 4MHZ
2002 - Not Available

Abstract: No abstract text available
Text: BDW84 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 45V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 15A All Semelab hermetically sealed products can


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PDF BDW84 O204AA) 16-Jul-02
2002 - BDW84

Abstract: No abstract text available
Text: BDW84 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. Bipolar PNP Device. VCEO = 45V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 15A 7.92 (0.312) 12.70 (0.50) All Semelab hermetically


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PDF BDW84 O204AA) 31-Jul-02 BDW84
2002 - Not Available

Abstract: No abstract text available
Text: BDW84 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 45V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 15A All Semelab hermetically sealed products can


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PDF BDW84 O204AA) 18-Jun-02
BDW83

Abstract: BDW83C BDW83B BDW83D diode 83C BDW83A
Text: Inchange Semiconductor Product Specification BDW83/83A/83B/83C/83D Silicon NPN Power Transistors DESCRIPTION With TO-3PN package Complement to type BDW84 /84A/84B/84C/84D DARLINGTON High DC current gain APPLICATIONS For use in power linear and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25) SYMBOL VCBO PARAMETER


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PDF BDW83/83A/83B/83C/83D BDW84/84A/84B/84C/84D BDW83 BDW83A BDW83B BDW83C BDW83D BDW83B BDW83 BDW83C BDW83D diode 83C BDW83A
BDW83D

Abstract: BDW83C BDW83 BDW83B BDW83A BDW84
Text: SavantIC Semiconductor Product Specification BDW83/83A/83B/83C/83D Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BDW84 /84A/84B/84C/84D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in power linear and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS


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PDF BDW83/83A/83B/83C/83D BDW84/84A/84B/84C/84D BDW83 BDW83A BDW83B BDW83C BDW83D BDW83C BDW83 BDW83B BDW83A BDW84
T0220

Abstract: No abstract text available
Text: 150 150 150 BDW84A BDW84B BDW84C BDW93 BDW93A PNP PNP PNP NPN NPN T03 T03 T03 , BDW84 NPN NPN NPN NPN PNP T03 T03 T03 T03 T03 45 60 80 100 45 15 15 15 15 15


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PDF BDW51A BDW51B BDW51C BDW52 BDW52A BDW52B BDW52C BDW53 BDW53A BDW53B T0220
R3381

Abstract: R3498 a101 transistor R3381-S BDW85-S buv49 transistor 1015 TIPL763 883 transistor TIC263D
Text: BDV66-S BDW83B BDW83B-S BDW83C BDW83C-S BDW83D BDW83D-S BDW84 BDW84B BDW84B-S BDW84C BDW84C-S BDW84D BDW84D-S BDW84-S BDW85 BDW85-S BU426 BU426A BU426A-S BU426-S BU466 BU466-S BUV47


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PDF OT-93 BLBF40 MP150SG, MG15G-1040R, cusV47-S BUV48 BUV48A BUV48A-S R3381 R3498 a101 transistor R3381-S BDW85-S buv49 transistor 1015 TIPL763 883 transistor TIC263D
BOW83

Abstract: BDW83B BOW83C D 1878 TRANSISTOR bdw83a TRANSISTOR Bdw83d
Text: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS Copyright O 1997, Power Innovations Limited. UK AUGUST 1878 - REVISED MARCH 1997 · Designed for Complementary Use with BDW84 , BDW84A , BDW84B , BDW84C and BDW84D 150 W at 2S°C Case Temperature 15 A Continuous Collector Current C SOT-93 PACKAGE (TOP V IEW ) · · · B C CZ 7 0 - V Minimum hFg of 750 at 3 V, 6 A E C * o O i L o - Pin 2 is in electrical contact with the


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PDF BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D BOW83 BDW83B BOW83C D 1878 TRANSISTOR bdw83a TRANSISTOR Bdw83d
r3381

Abstract: R3498 buv49 MP150s tipl763 TIC263M BDW85-S transistor BD245 BD250C-S buv48s
Text: BDV65C-S BDV65-S BDV66 BDV66-S BDW83B BDW83B-S BDW83C BDW83C-S BDW83D BDW83D-S BDW84 BDW84B BDW84B-S BDW84C BDW84C-S BDW84D BDW84D-S BDW84-S BDW85 BDW85-S BU426 BU426A BU426A-S BU426-S


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PDF OT-93 BLBF40 MP150SG, MG15G-1040R, cusV47-S BUV48 BUV48A BUV48A-S r3381 R3498 buv49 MP150s tipl763 TIC263M BDW85-S transistor BD245 BD250C-S buv48s
bdw26

Abstract: No abstract text available
Text: BDW83A BDW83B BDW83C BDW84 BDW84A BDW84B BDW84C BDX10 BDX11 BDX12 BDX13 BDX14A BDX16A BDX18 50004-174


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PDF BDS10 BDS10-SM BDS11 BDS12 BDS12-SM BDS13 bdw26
1978 - bdw83

Abstract: BDW83C
Text: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS G Designed for Complementary Use with BDW84 , BDW84A , BDW84B , BDW84C and BDW84D 125 W at 25°C Case Temperature 15 A Continuous Collector Current C B SOT-93 PACKAGE (TOP VIEW) 1 G G G 2 Minimum hFE of 750 at 3 V, 6 A This model is currently available, but not recommended for new designs. For more information, see http://bourns.com/data/ global/pdfs/TSP1203_SOT93_POM.pdf. E 3 Pin 2 is in electrical contact with the


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PDF BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D bdw83 BDW83C
BDW640

Abstract: No abstract text available
Text: ) Tc * 150` C Tc * 150" C Tc = 150°C Tc = 150"C Tc * 150"C BDW64D BDW84 BDW64A BOW64B BDW64C 8DW64D


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PDF BDW64, BDW64A, BDW64B, BDW64C, BDW64D BDW63, BDW63A, BDW63B, BOW63C BDW63D BDW640
1978 - BDW83

Abstract: BDW84C BDW84B BDW84A BDW84 BDW83D BDW83C BDW83B BDW83A BDW84D
Text: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BDW84 , BDW84A , BDW84B , BDW84C and BDW84D SOT-93 PACKAGE (TOP VIEW) 2 3 15 A Continuous Collector Current 1 E 150 W at 25°C Case Temperature B C Minimum hFE of 750 at 3V, 6 A Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW83B V


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PDF BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D BDW83 BDW84B BDW84A BDW84 BDW83D BDW83C BDW83B BDW83A BDW84D
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