The Datasheet Archive

BDW83B datasheet (15)

Part Manufacturer Description Type PDF
BDW83B Bourns NPN SILICON POWER DARLINGTONS - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=15 / Hfe=750-20k / fT(Hz)=1M / Pwr(W)=150 Original PDF
BDW83B Central Semiconductor Leaded Power Transistor Darlington Original PDF
BDW83B Power Innovations NPN SILICON POWER DARLINGTON Original PDF
BDW83B Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=15 / Hfe=750-20k / fT(Hz)=1M / Pwr(W)=150 Original PDF
BDW83B Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
BDW83B Others Shortform Transistor PDF Datasheet Scan PDF
BDW83B Others Shortform Transistor PDF Datasheet Scan PDF
BDW83B Others Transistor Replacements Scan PDF
BDW83B Others Cross Reference Datasheet Scan PDF
BDW83B Others Semiconductor Master Cross Reference Guide Scan PDF
BDW83B Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BDW83B Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BDW83B Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan PDF
BDW83B-S Bourns Transistors (BJT) - Single, Discrete Semiconductor Products, NPN DARLINGTON 80V 15A Original PDF
BDW83B-S Bourns NPN DARLINGTON 80V 15A Original PDF

BDW83B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1978 - BDW83

Abstract: BDW83A BDW83C BDW83D BDW84C BDW84B BDW84A BDW84 BDW83B BDW84D
Text: BDW83, BDW83A, BDW83B , BDW83C, BDW83D NPN SILICON POWER DARLINGTONS Copyright © 1997, Power , at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW83 BDW83B 60 VCBO 80 , ) UNIT 45 BDW83A Collector-base voltage (IE = 0) VALUE BDW83B 60 VCEO BDW83C 80 , not necessarily include testing of all parameters. 1 BDW83, BDW83A, BDW83B , BDW83C, BDW83D , 120 V VCE = 30 V IB = 0 BDW83B 1 V CE = 50 V IB = 0 BDW83C 1 IB = 0


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PDF BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D BDW83 BDW83A BDW83C BDW83D BDW84B BDW84A BDW84 BDW83B BDW84D
1978 - bdw83

Abstract: BDW83C
Text: BDW83, BDW83A, BDW83B , BDW83C, BDW83D NPN SILICON POWER DARLINGTONS G Designed for , ) RATING BDW83 BDW83A Collector-base voltage (IE = 0) BDW83B BDW83C BDW83D BDW83 BDW83A Collector-emitter voltage (IB = 0) (see Note 1) BDW83B BDW83C BDW83D Emitter-base voltage Continuous collector current , , BDW83A, BDW83B , BDW83C, BDW83D NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case , voltage BDW83A IC = 30 mA IB = 0 (see Note 5) BDW83B BDW83C BDW83D VCE = 30 V ICEO Collector-emitter


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PDF BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D bdw83 BDW83C
1978 - BDW83

Abstract: BDW84C BDW84B BDW84A BDW84 BDW83D BDW83C BDW83B BDW83A BDW84D
Text: BDW83, BDW83A, BDW83B , BDW83C, BDW83D NPN SILICON POWER DARLINGTONS Designed for , absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW83B V CBO 80 BDW83C 120 BDW83 45 60 BDW83A BDW83B VCEO 80 V 100 BDW83C , Specifications are subject to change without notice. 1 BDW83, BDW83A, BDW83B , BDW83C, BDW83D NPN SILICON , current IB = 0 BDW83 1 VCE = 30 V IB = 0 BDW83A 1 VCE = 40 V IB = 0 BDW83B


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PDF BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D BDW83 BDW84B BDW84A BDW84 BDW83D BDW83C BDW83B BDW83A BDW84D
1978 - BDW83

Abstract: BDW83C BDW83D BDW84C BDW84B BDW84A BDW84 BDW83B BDW83A BDW84D
Text: BDW83, BDW83A, BDW83B , BDW83C, BDW83D NPN SILICON POWER DARLINGTONS Designed for , absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW83B V CBO 80 BDW83C 120 BDW83 45 60 BDW83A BDW83B VCEO 80 V 100 BDW83C , Specifications are subject to change without notice. 1 BDW83, BDW83A, BDW83B , BDW83C, BDW83D NPN SILICON , current IB = 0 BDW83 1 VCE = 30 V IB = 0 BDW83A 1 VCE = 40 V IB = 0 BDW83B


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PDF BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D BDW83 BDW83C BDW83D BDW84B BDW84A BDW84 BDW83B BDW83A BDW84D
1978 - TRANSISTOR Bdw83d

Abstract: BDW83B BDW84D BDW84C BDW84B BDW84A BDW84 BDW83D BDW83C BDW83A
Text: BDW83, BDW83A, BDW83B , BDW83C, BDW83D NPN SILICON POWER DARLINGTONS G Designed for , absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW83 BDW83B 60 VCBO 80 BDW83C 120 BDW83 45 BDW83A BDW83B 60 VCEO BDW83C 80 V , are subject to change without notice. 1 BDW83, BDW83A, BDW83B , BDW83C, BDW83D NPN SILICON , = 0 BDW83 1 VCE = 30 V IB = 0 BDW83A 1 VCE = 40 V IB = 0 BDW83B 1


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PDF BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D TRANSISTOR Bdw83d BDW83B BDW84D BDW84B BDW84A BDW84 BDW83D BDW83C BDW83A
1978 - bdw83

Abstract: TRANSISTOR Bdw83d BDW83B BDW83C
Text: BDW83, BDW83A, BDW83B , BDW83C, BDW83D NPN SILICON POWER DARLINGTONS G Designed for , °C case temperature (unless otherwise noted) RATING BDW83 Collector-base voltage (IE = 0) BDW83A BDW83B , BDW83D BDW83 BDW83A BDW83B VCEO BDW83C BDW83D VEBO IC IB Ptot Ptot Tj ½LIC2 Tstg TA These values apply , JUNE 2011 Specifications are subject to change without notice. BDW83, BDW83A, BDW83B , BDW83C , 30 mA IB = 0 (see Note 5) BDW83B BDW83C BDW83D VCE = 30 V ICEO Collector-emitter cut-off current VCE


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PDF BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D bdw83 TRANSISTOR Bdw83d BDW83B BDW83C
BOW83

Abstract: BDW83B BOW83C D 1878 TRANSISTOR bdw83a TRANSISTOR Bdw83d
Text: BDW83, BDW83A, BDW83B , BDW83C, BDW83D NPN SILICON POWER DARLINGTONS Copyright O 1997, Power , BDW83A Collector-base voltage {fE = 0} BDW83B BOW83C BDW83D 8D W 83 BDW83A Collector-emitter voltage Ob = °) (see Note 1) BDW83B BDW83C BDW83D Emitter-base vottage Continuous collector current Continuous , (BR)CEO IH N 45 60 80 100 120 TYP MAX UNIT BDW83A lc = 30 mA lB = 0 (see Note 5} BDW83B BDW83C BDW83D V CE = 30 V « 5= 0 o U breakdown voltage V BDWB3 BDW83A BDW83B BDW83C BDW83D


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PDF BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D BOW83 BDW83B BOW83C D 1878 TRANSISTOR bdw83a TRANSISTOR Bdw83d
ED 83A

Abstract: BDW83B BDW83d
Text: BDW83, BDW83A, BDW83B , BDW83C, BDW83D NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , ) RATING BDW83 BDW 83A Collector-base voltage ( lE = 0) BDW83B BDW83C BDW83D BDW83 BDW 83A Collector-em itter voltage ( lB = 0) (see Note 1) BDW83B BDW83C BDW83D Em itter-base voltage Continuous collector , all parameters. BDW83, BDW83A, BDW83B , BDW83C, BDW83D NPN SILICON POWER DARLINGTONS AUG UST 1978 , BDW 83A Iq = 30 mA lB = 0 (see Note 5) BDW83B BDW83C BDW83D > 30 V 30 V 40 V 50 V 60 V 45 V 60 V 80 V


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PDF BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D ED 83A BDW83B
BDW83

Abstract: BDW83C BDW83B BDW83D diode 83C BDW83A
Text: CONDITIONS DUC ICON BDW83 BDW83A Collector-base voltage SEM E BDW83B ANG TOR VALUE , 45 60 BDW83B Open base 80 BDW83C Emitter-base voltage V 100 BDW83D VEBO , Collector-emitter breakdown voltage MAX UNIT 45 BDW83A TYP. 60 BDW83B IC=30mA, IB=0 V , current BDW83B BDW83C BDW83D VCE=30V, IB=0 BDW83A VCE=30V, IB=0 BDW83B VCE=40V, IB


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PDF BDW83/83A/83B/83C/83D BDW84/84A/84B/84C/84D BDW83 BDW83A BDW83B BDW83C BDW83D BDW83B BDW83 BDW83C BDW83D diode 83C BDW83A
BDW83D

Abstract: BDW83C BDW83 BDW83B BDW83A BDW84
Text: VALUE BDW83 VCBO Collector-base voltage 45 BDW83A 60 BDW83B Open emitter 80 BDW83C 45 BDW83A Collector-emitter voltage 120 BDW83 60 BDW83B Open base 80 , MAX UNIT 45 BDW83A TYP. 60 BDW83B IC=30mA, IB=0 V 80 BDW83C 100 , VBE BDW83 BDW83A ICBO Collector cut-off current BDW83B BDW83C BDW83D BDW83 BDW83A BDW83B VCE=40V, IB=0 VCE=50V, IB=0 BDW83D Collector cut-off current VCE=30V, IB=0 BDW83C


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PDF BDW83/83A/83B/83C/83D BDW84/84A/84B/84C/84D BDW83 BDW83A BDW83B BDW83C BDW83D BDW83C BDW83 BDW83B BDW83A BDW84
bdw83a

Abstract: No abstract text available
Text: O M S O N 3 DE IC O B T-33-29 Max. U nit for BDW83A/84A for BDW83B /84B for BDW83C/84C 0.5 0.5 0.5 mA mA mA for BDW83A/84A for BDW83B /84B for BDW83C/84C 5 5 5 mA mA mA for BDW83A/84A for BDW83B /84B for BDW83C/84C 1 1 1 mA mA mA 2 mA T e , Sustaining Voltage lc =30m A for BDW83A/84A for BDW83B /84B for BDW83C/84C VcE(sat


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PDF BDW84A/B/C BDW83A/B/C O-218 300ns, bdw83a
1978 - SOT93

Abstract: BDW83C BDW83D BDW83 BDW83A BDW83B
Text: BDW83, BDW83A, BDW83B , BDW83C, BDW83D NPN SILICON POWER DARLINGTONS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or


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PDF BDW83, BDW83A, BDW83B, BDW83C, BDW83D OT-93 SOT93 BDW83C BDW83D BDW83 BDW83A BDW83B
2004 - tip142/TIP147 AMPLIFIER CIRCUIT

Abstract: BDV65, BDV64 TIP36C to-247 BDW83C BDW83B BDW83A BDV65B BDV65A TIP35C TIP2955
Text: ) (V) (A) fT (MHz) MAX *TYP MIN BDW83B BDW84B 15 130 80 80 750


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PDF O-218 BDV64B BDW84A BDV65 BDV64 BDV65A BDV64A BDV65B BDW83A BDW83B tip142/TIP147 AMPLIFIER CIRCUIT BDV65, BDV64 TIP36C to-247 BDW83C BDW83B BDW83A BDV65B BDV65A TIP35C TIP2955
BDV65, BDV64

Abstract: TIP-1 tip142 BDV64 TIP3055 DARLINGTON TRANSISTORS
Text: Power Transistors TO-218 Case* (Continued) General Purpose Amplifier type no. •c Pd bvcbo bvceo h fe @ lc @ vCE vce(sa t)@'c h (A) (W) (v) (V) (A) (v) (v) (A) (MHz) "typ npn pnp min min min max max min bdv65 bdv64 12 125 60 60 1,000 — 5.0 4.0 2.0 5.0 60* bdv65a bdv64a 12 125 80 80 1,000 — 5.0 4.0 2.0 5.0 60* bdv65b bdv64b 12 125 100 100 1,000 — 5.0 4.0 2.0 5.0 60* bdw83a bdw84a 15 130 60 60 750 20,000 6.0 3.0 2.5 6.0 . bdw83b bdw84b 15 130 80 80 750 20,000 6.0 3.0


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PDF O-218 bdv65 bdv64 bdv65a bdv64a bdv65b bdv64b bdw83a bdw84a bdw83b BDV65, BDV64 TIP-1 tip142 TIP3055 DARLINGTON TRANSISTORS
2002 - BDW83B

Abstract: No abstract text available
Text: BDW83B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = 80V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 15A 7.92 (0.312) 12.70 (0.50) All Semelab


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PDF BDW83B O204AA) 31-Jul-02 BDW83B
2002 - Not Available

Abstract: No abstract text available
Text: BDW83B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 80V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 15A All Semelab hermetically sealed products can


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PDF BDW83B O204AA) 18-Jun-02
2009 - TIC106M SCR

Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 BTB06-600 TIP36C EQUIVALENT TIC116D equivalent TIC126D equivalent
Text: BDW73C BDW73D TIP130 TIP131 TIP132 BDX33B BDX33C BDX33D TIP142 BDV65C BDW93B BDW93C BDW83B , BDW93C BDW83B BDW83C BDW83D 2 2 2 4 4 4 5 6 6 8 8 8 8 8 8 8 8 8 10 10 10 10 , BDW73D BDW74 BDW74A BDW74B BDW74C BDW74D BDW83 BDW83A BDW83B BDW83C BDW83D BDW84 BDW84A


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PDF O-220, OT-93 2M/TSP0904 TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 BTB06-600 TIP36C EQUIVALENT TIC116D equivalent TIC126D equivalent
2002 - Not Available

Abstract: No abstract text available
Text: BDW83B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 80V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 15A All Semelab hermetically sealed products can


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PDF BDW83B O204AA) 16-Jul-02
tip142/TIP147 AMPLIFIER CIRCUIT

Abstract: tip141 equivalent BDV65, BDV64 TIP35C EQUIVALENT BDW83C BDW83B BDW83A BDV65B BDV65A TIP3055 DARLINGTON TRANSISTORS
Text: 2.5 6.0 - BDW83B BDW84B 15 130 80 80 750 20,000 6.0 3.0 2.5


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PDF O-218 BDV64B BDW83A BDW84A BDW83B BDW84B BDW83C BDW84C TIP33A TIP34A tip142/TIP147 AMPLIFIER CIRCUIT tip141 equivalent BDV65, BDV64 TIP35C EQUIVALENT BDW83C BDW83B BDW83A BDV65B BDV65A TIP3055 DARLINGTON TRANSISTORS
tip142/TIP3055

Abstract: BDW83C BDW83B BDW83A BDV65B BDV65A BDV65, BDV64 BDV65 BDV64B TIP35C TIP36C
Text: Power Transistors TO-218 Case* (Continued) General Purpose Amplifier TYPE NO. •c PD bvcbo bvceo h FE @ lc @ vCE VCE(SA T) ® "C h (A) (W) (V) (V) (A) (V) (V) (A) (MHz) "TYP NPN PNP MIN MIN MIN MAX MAX MIN BDV65 BDV64 12 125 60 60 1,000 — 5.0 4.0 2.0 5.0 60* BDV65A BDV64A 12 125 80 80 1,000 — 5.0 4.0 2.0 5.0 60* BDV65B BDV64B 12 125 100 100 1,000 — 5.0 4.0 2.0 5.0 60* BDW83A BDW84A 15 130 60 60 750 20,000 6.0 3.0 2.5 6.0 . BDW83B BDW84B 15 130 80 80 750 20,000 6.0 3.0


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PDF O-218 BDV65 BDV64 BDV65A BDV64A BDV65B BDV64B BDW83A BDW84A BDW83B tip142/TIP3055 BDW83C BDV65, BDV64 TIP35C TIP36C
T0220

Abstract: No abstract text available
Text: 3/3 3/3 3/3 3/3 3/3 1M 1M 1M 1M 1M 80 80 80 80 80 BDW83 BDW83A BDW83B BDW83C


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PDF BDW51A BDW51B BDW51C BDW52 BDW52A BDW52B BDW52C BDW53 BDW53A BDW53B T0220
2008 - TIC106D equivalent

Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
Text: BDW73C BDW73D TIP130 TIP131 TIP132 BDX33B BDX33C BDX33D TIP142 BDV65C BDW93B BDW93C BDW83B , BDW93C BDW83B BDW83C BDW83D 2 2 2 4 4 4 5 6 6 8 8 8 8 8 8 8 8 8 10 10 10 10 , BDW73D BDW74 BDW74A BDW74B BDW74C BDW74D BDW83 BDW83A BDW83B BDW83C BDW83D BDW84 BDW84A


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PDF O-220, OT-93 2M/TSP0711 TIC106D equivalent TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
2004 - BU508 darlington

Abstract: TO247 CASE tip142/TIP147 AMPLIFIER CIRCUIT data sheet bu508d BDV65, BDV64 tip147 ic top 247 BU508 equivalent TIP54 TIP51
Text: ) (V) (A) fT (MHz) MAX *TYP MIN BDW83B BDW84B 15 130 80 80 750


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PDF O-218 2N6931* 2N6932* 2N6933* 2N6934* 2N6935* BU426* BU426A* TIP35C TIP36C BU508 darlington TO247 CASE tip142/TIP147 AMPLIFIER CIRCUIT data sheet bu508d BDV65, BDV64 tip147 ic top 247 BU508 equivalent TIP54 TIP51
TIP53

Abstract: No abstract text available
Text: ) (A) « typ MAX MIN 5.0 5.0 5.0 h NPN BDV65 BDV65A BDV65B BDW83A BDW83B BDW83C TIP33A TIP33B


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PDF O-218 2N6931 2N6932 2N6933 2N6934 2N6935 BU426 BU426A BU508 BU508A TIP53
R3381

Abstract: R3498 a101 transistor R3381-S BDW85-S buv49 transistor 1015 TIPL763 883 transistor TIC263D
Text: BDV66-S BDW83B BDW83B-S BDW83C BDW83C-S BDW83D BDW83D-S BDW84 BDW84B BDW84B-S BDW84C BDW84C-S


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PDF OT-93 BLBF40 MP150SG, MG15G-1040R, cusV47-S BUV48 BUV48A BUV48A-S R3381 R3498 a101 transistor R3381-S BDW85-S buv49 transistor 1015 TIPL763 883 transistor TIC263D
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