The Datasheet Archive

Top Results (2)

Part Manufacturer Description Datasheet Download Buy Part
LM3550SP/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85
LM3550SPX/NOPB Texas Instruments A Flash LED Driver with Automatic Vf and ESR Detection for Mobile Camera Systems 20-UQFN -30 to 85

BDV65B equivalent Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1993 - BDV65B

Abstract: BDV65 bdv65a BDV64 BDV64A BDV64B BDV64C BDV65C
Text: BDV65, BDV65A, BDV65B , BDV65C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , (unless otherwise noted) RATING SYMBOL BDV65 Collector-base voltage (IE = 0) BDV65A BDV65B , 60 60 BDV65A BDV65B VCEO BDV65C 80 100 V 120 V EBO 5 V IC 12 A , , BDV65A, BDV65B , BDV65C NPN SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 1997 electrical , MAX 80 BDV65B 100 BDV65A 2 cut-off current V CB = 50 V IB = 0 BDV65B 2


Original
PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C OT-93 BDV65 BDV65B BDV65 bdv65a BDV64 BDV64A BDV64C BDV65C
2001 - BDV64B

Abstract: BDV65B bdv64b transistor
Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP , Components Industries, LLC, 2001 March, 2001 ­ Rev. 10 1 Publication Order Number: BDV65B /D 4 , ELECTRICAL CHARACTERISTICS BDV65B BDV64B BDV65B BDV64B 10 VBE(sat) @ IC/IB = 250 1 0.1 V , BREAKDOWN LIMITED @ TJ v 150°C THERMAL LIMIT @ TC = 25°C BONDING WIRE LIMIT 1 BDV65B , BDV64B 10 , Response http://onsemi.com 3 50 100 500 1000 BDV65B BDV64B PACKAGE DIMENSIONS CASE


Original
PDF BDV65B BDV64B r14525 BDV65B/D BDV64B BDV65B bdv64b transistor
2012 - transistors BDV64B

Abstract: BDV65BG npn power amplifier circuit all number npn pnp transistor pin out data BDV64BG bdv64
Text: BDV65B (NPN), BDV64B(PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output , PNP COLLECTOR 2,4 BASE 1 BASE 1 EMITTER 3 BDV65B EMITTER 3 BDV64B THERMAL , 1 Publication Order Number: BDV65B /D BDV65B (NPN), BDV64B (PNP) MARKING DIAGRAMS TO , Vdc Vdc BDV65B (NPN), BDV64B (PNP) http://onsemi.com 3 BDV65B (NPN), BDV64B (PNP) NPN 10K , BDV65B , BDV64B 1 10 50 30 VCE, COLLECTOR-EMITTER VOLTAGE (V) 100 100 s 5.0 ms 1.0 ms 10 5 1


Original
PDF BDV65B BDV64B BDV65B/D transistors BDV64B BDV65BG npn power amplifier circuit all number npn pnp transistor pin out data BDV64BG bdv64
Not Available

Abstract: No abstract text available
Text: JERSEY 07081 U.S.A. BDV65, BDV65A, BDV65B , BDV65C NPN SILICON POWER DARLINGTONS • Designed , SYMBOL Collector-base voltage (IE = 0) BDV65 BDV65A BDV65B BDV65C VCBO Collector-emitter voltage (Ig = 0) BDV65 BDV65A BDV65B BDV65C VCEO Emitter-base voltage Continuous collector , V A A A W W °C °c °c BDV65, BDV65A, BDV65B , BDV65C NPN SILICON POWER DARLINGTONS , voltage MIN (see Note 4) BDV65 BDV65A BDV65B TC = 150°C TC = 150°C ^ = 150^ TC = 150Â


Original
PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C BDV65 BDV65A
1993 - BDV65

Abstract: BDV65B BDV65A BDV65C BDV64 BDV64A BDV64B BDV64C
Text: BDV65, BDV65A, BDV65B , BDV65C NPN SILICON POWER DARLINGTONS Designed for Complementary Use , ) BDV65B V CBO 80 100 BDV65C V 120 BDV65 Collector-emitter voltage (IB = 0) UNIT 60 BDV65 BDV65A VALUE 60 BDV65A BDV65B VCEO 80 100 V 120 BDV65C VEBO , , BDV65B , BDV65C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature , BDV65A 2 cut-off current VCB = 50 V IB = 0 BDV65B 2 V VCB = 60 V 0.4 BDV65B


Original
PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C OT-93 BDV65B BDV65 BDV65B BDV65A BDV65C BDV64 BDV64A BDV64C
1993 - BDV64

Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
Text: BDV65, BDV65A, BDV65B , BDV65C NPN SILICON POWER DARLINGTONS Designed for Complementary Use , ) BDV65B V CBO 80 100 BDV65C V 120 BDV65 Collector-emitter voltage (IB = 0) UNIT 60 BDV65 BDV65A VALUE 60 BDV65A BDV65B VCEO 80 100 V 120 BDV65C VEBO , , BDV65B , BDV65C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature , BDV65A 2 cut-off current VCB = 50 V IB = 0 BDV65B 2 V VCB = 60 V 0.4 BDV65B


Original
PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C OT-93 BDV65B BDV64 BDV64A BDV64C BDV65 BDV65A BDV65B BDV65C
2012 - Not Available

Abstract: No abstract text available
Text: Storage Junction Temperature Range EMITTER 3 BDV65B THERMAL CHARACTERISTICS Characteristic , . 14 1 Publication Order Number: BDV65B /D BDV65B (NPN), BDV64B (PNP) MARKING DIAGRAMS TOâ , BDV65B (NPN), BDV64B (PNP) BDV65B (NPN), BDV64B (PNP) NPN PNP 10K hFE , DC CURRENT GAIN hFE , °C THERMAL LIMIT @ TC = 25°C BONDING WIRE LIMIT 1 BDV65B , BDV64B 1 10 There are two , ), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BDV65B (NPN), BDV64B (PNP) 1.0 0.5 0.2 D = 0.5 0.2


Original
PDF BDV65Bâ BDV64Bâ BDV65B/D
1993 - BDV65B

Abstract: No abstract text available
Text: BDV65, BDV65A, BDV65B , BDV65C NPN SILICON POWER DARLINGTONS Designed for Complementary , voltage (IE = 0) BDV65A BDV65B BDV65C BDV65 Collector-emitter voltage (IB = 0) BDV65A BDV65B BDV65C , Specifications are subject to change without notice. BDV65, BDV65A, BDV65B , BDV65C NPN SILICON POWER , Collector-emitter breakdown voltage TEST CONDITIONS BDV65 V(BR)CEO IC = 30 mA IB = 0 (see Note 4) BDV65A BDV65B , BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C MIN 60 80 100 120 2 2 2 2 0.4 0.4 0.4


Original
PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C OT-93 global/pdfs/TSP1203 BDV65B
BDV65

Abstract: BDV65B
Text: BDV65, BDV65A, BDV65B , BDV65C NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , voltage ( lE = 0) BDV65A BDV65B BDV65C BDV65 Collector-em itter voltage ( lB = 0) BDV65A BDV65B BDV65C Em , include testing of all parameters. BDV65, BDV65A, BDV65B , BDV65C NPN SILICON POWER DARLINGTONS JUNE , MAX UNIT breakdown voltage Iq = 30 mA lB = o (see Note 4) v ' BDV65A BDV65B , II BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C T c = 150°C T c = 150°C T c = 150°C T c =


OCR Scan
PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C OT-93 BDV65 BDV65B
1993 - BDV65

Abstract: No abstract text available
Text: BDV65, BDV65A, BDV65B , BDV65C NPN SILICON POWER DARLINGTONS Designed for Complementary , (unless otherwise noted) RATING BDV65 Collector-base voltage (IE = 0) BDV65A BDV65B BDV65 SYMBOL VALUE 60 , temperature at the rate of 28 mW/°C. E T E L O S B O BDV65C BDV65A BDV65B VCEO BDV65C VEBO IC IB ICM Ptot , subject to change without notice. BDV65, BDV65A, BDV65B , BDV65C NPN SILICON POWER DARLINGTONS , breakdown voltage TEST CONDITIONS BDV65 V(BR)CEO IC = 30 mA IB = 0 (see Note 4) BDV65A BDV65B BDV65C VCB =


Original
PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C OT-93 BDV65
BDV65

Abstract: bdv65b 8DV65C BOV65 BOV64A bdv65a
Text: BDV65, BDV65A, BDV65B , BDV65C NPN SILICON POWER DARLINGTONS Copyright© 1997, Power innovations , B0V65A BDV65B BDV65C BDV65 CoUector-emitter voltage (lg = 0) BDV65A BDV65B BDV65C Emitter-base voltage , . INNOVATIONS P 3-39 B0V65, BDV65A, BDV65B , BDV65C NPN SILICON POWER DARL1NGTONS JU N E 1993 - REVISED , TYP MAX UNIT 0 ^ , (see Note 4} BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B 100 120 , = 50 V VCB = 60 V tB a 0 lg = 0 !g = 0 lE = 0 mA BDV65C BDV65 BDV65A BDV65B 8DV65C VCB


OCR Scan
PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BOV64A, BDV64B BDV64C OT-93 BOV65 BDV65 bdv65b 8DV65C BOV64A bdv65a
2006 - BDV64B

Abstract: BDV65B
Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP , March, 2006 - Rev. 12 1 Publication Order Number: BDV65B /D 4 0.1 2 http://onsemi.com , mAdc, IB = 0) OFF CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS BDV65B BDV64B BDV65B BDV64B 10 VBE(sat) @ IC/IB = 250 1 0.1 V, VOLTAGE (V) V, VOLTAGE (V) 10 0.1 , °C THERMAL LIMIT @ TC = 25°C BONDING WIRE LIMIT 1 BDV65B , BDV64B 10 50 30 VCE, COLLECTOR-EMITTER


Original
PDF BDV65B BDV64B BDV65B/D BDV64B BDV65B
2002 - BDV64B

Abstract: BDV65B bdv64b transistor
Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP , Components Industries, LLC, 2002 January, 2002 ­ Rev. 11 1 Publication Order Number: BDV65B /D 4 , ELECTRICAL CHARACTERISTICS BDV65B BDV64B BDV65B BDV64B 10 VBE(sat) @ IC/IB = 250 1 0.1 V , BREAKDOWN LIMITED @ TJ v 150°C THERMAL LIMIT @ TC = 25°C BONDING WIRE LIMIT 1 BDV65B , BDV64B 10 , Response http://onsemi.com 3 50 100 500 1000 BDV65B BDV64B PACKAGE DIMENSIONS CASE


Original
PDF BDV65B BDV64B r14525 BDV65B/D BDV64B BDV65B bdv64b transistor
1996 - Motorola Power Transistor Data Book

Abstract: MOTOROLA TRANSISTOR T2 Motorola Bipolar Power Transistor Data 03 transistor BDV65B Motorola 801 TRansistor L 701 bipolar transistor power transistors Bipolar Junction Transistor
Text: MOTOROLA Order this document by BDV65B /D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP , ELECTRICAL CHARACTERISTICS BDV65B BDV64B BDV65B BDV64B NPN PNP 10K hFE , DC CURRENT GAIN , °C THERMAL LIMIT @ TC = 25°C BONDING WIRE LIMIT v 1 v BDV65B , BDV64B 1 10 50 30 VCE , Transistor Device Data 3 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BDV65B BDV64B 1.0 0.5 , Power Transistor Device Data 1000 BDV65B BDV64B PACKAGE DIMENSIONS C Q B U S NOTES


Original
PDF BDV65B/D BDV65B BDV64B BDV65B/D* Motorola Power Transistor Data Book MOTOROLA TRANSISTOR T2 Motorola Bipolar Power Transistor Data 03 transistor BDV65B Motorola 801 TRansistor L 701 bipolar transistor power transistors Bipolar Junction Transistor
1996 - BDV64B

Abstract: MOTOROLA TRANSISTOR BDV65B bdv64b transistor
Text: MOTOROLA Order this document by BDV65B /D SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP , mAdc, IB = 0) OFF CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS BDV65B BDV64B BDV65B BDV64B NPN PNP 10K hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 4 V 10K , v 1 v BDV65B , BDV64B 1 10 50 30 VCE, COLLECTOR­EMITTER VOLTAGE (V) 100 Figure , ), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BDV65B BDV64B 1.0 0.5 0.2 D = 0.5 0.2 0.1 0.1


Original
PDF BDV65B/D BDV65B BDV64B BDV65B/D* BDV64B MOTOROLA TRANSISTOR BDV65B bdv64b transistor
1995 - motorola 572 transistor

Abstract: MOTOROLA TRANSISTOR T2 transistors BDV64B MOTOROLA TRANSISTOR BDV64B BDV65B
Text: . Complementary Silicon Plastic Power Darlingtons BDV65B PNP BDV64B NPN SEMICONDUCTOR TECHNICAL DATA Order this document by BDV65B /D MOTOROLA 2 Motorola Bipolar Power Transistor Device Data , mAdc, IB = 0) OFF CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS BDV65B BDV64B BDV65B BDV64B NPN PNP 10K hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 4 V 10K , v 1 v BDV65B , BDV64B 1 10 50 30 VCE, COLLECTOR­EMITTER VOLTAGE (V) 100 Figure


Original
PDF BDV65B/D* BDV65B/D motorola 572 transistor MOTOROLA TRANSISTOR T2 transistors BDV64B MOTOROLA TRANSISTOR BDV64B BDV65B
2008 - bdv64b

Abstract: BDV64BG transistor packages sot93 BDV65B BDV65BG
Text: BDV65B (NPN), BDV64B(PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as , COLLECTOR 2 BASE 1 BASE 1 EMITTER 3 BDV65B EMITTER 3 BDV64B THERMAL CHARACTERISTICS , ORDERING INFORMATION Device BDV65B BDV65BG BDV64B BDV64BG © Semiconductor Components Industries , Publication Order Number: BDV65B /D 2 http://onsemi.com ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î , 0.4 0.6 0.8 1.0 BDV65B (NPN), BDV64B (PNP) BDV65B (NPN), BDV64B (PNP) NPN PNP 10K


Original
PDF BDV65B BDV64B BDV65B/D BDV64BG transistor packages sot93 BDV65BG
2001 - 4422 datasheet

Abstract: ic 701 BDV64B BDV65B
Text: NPN Complementary Silicon Plastic Power Darlingtons BDV65B PNP BDV64B . . . for use , Industries, LLC, 2001 January, 2001 ­ Rev. 9 1 Publication Order Number: BDV65B /D 4 0.1 2 , ELECTRICAL CHARACTERISTICS BDV65B BDV64B BDV65B BDV64B 10 VBE(sat) @ IC/IB = 250 1 0.1 V , BREAKDOWN LIMITED @ TJ v 150°C THERMAL LIMIT @ TC = 25°C BONDING WIRE LIMIT 1 BDV65B , BDV64B 10 , Response http://onsemi.com 3 50 100 500 1000 BDV65B BDV64B PACKAGE DIMENSIONS CASE


Original
PDF BDV65B BDV64B r14525 BDV65B/D 4422 datasheet ic 701 BDV64B BDV65B
BDV64C

Abstract: BDV64B B0V64B 8DV64B
Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK JU NE 1993 - R E V IS E D M A R C H 1997 · · · · Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C 125 W at 25 °C C ase Temperature 12 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A SOT-93 P A C KA G E (TOP VIEW) Pin 2 is In electrical contact with the mounting fc absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATINO


OCR Scan
PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 BDV64B B0V64B 8DV64B
1993 - BDV64

Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C 125 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0


Original
PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64B BDV64 BDV64A BDV64B BDV64C BDV65 BDV65A BDV65C
1993 - TIS140

Abstract: No abstract text available
Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C 125 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A C B SOT-93 PACKAGE (TOP VIEW) 1 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDV64 Collector-base voltage (IE = 0) BDV64A BDV64B BDV64 SYMBOL VALUE


Original
PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 TIS140
BDV64

Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
Text: G füAffSYS BDV64, BDV64A, BDV64B, BDV64C fUGTRONICS pNp SILICON POWER DARLINGTONS LIMITED • Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current • Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE (TOP VIEW) B C C C E C Pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT Collector-base voltage (lE


OCR Scan
PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 BDV64A BDV64B BDV64C BDV65 BDV65A BDV65C
1993 - Not Available

Abstract: No abstract text available
Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C 125 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A C B SOT-93 PACKAGE (TOP VIEW) 1 2 This model is currently available, but not recommended for new designs. For more information, see http://bourns.com/data/ global/pdfs/TSP1203_SOT93_POM.pdf. E 3 Pin 2 is in electrical contact with the mounting base


Original
PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 global/pdfs/TSP1203
BDV64B

Abstract: bdv64 Bdv64a
Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power Innovations Limited, UK JUNE 1993 - REVISED MARCH 1997 · · · · Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C 125 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the m ounting base. absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDV64 Collector-base


OCR Scan
PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 BDV64B Bdv64a
1993 - BDV64

Abstract: BDV64B BDV64A BDV64C BDV65 BDV65A BDV65B BDV65C BDV65, BDV64
Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C 125 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0


Original
PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64B BDV64 BDV64B BDV64A BDV64C BDV65 BDV65A BDV65C BDV65, BDV64
Supplyframe Tracking Pixel