The Datasheet Archive

BDV64C datasheet (17)

Part Manufacturer Description Type PDF
BDV64C Bourns PNP SILICON POWER DARLINGTONS Original PDF
BDV64C Motorola complementary power darlington transistor Original PDF
BDV64C Power Innovations PNP SILICON POWER DARLINGTON Original PDF
BDV64C Mospec Silicon Darlington Power Transistors Scan PDF
BDV64C Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
BDV64C Motorola European Master Selection Guide 1986 Scan PDF
BDV64C Others Shortform Transistor PDF Datasheet Scan PDF
BDV64C Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BDV64C Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BDV64C Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
BDV64C Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan PDF
BDV64C Transys Electronics Darlington Bipolar Transistor, PNP, 120V at Tc=25C, TO-218, 3-Pin Scan PDF
BDV64CF Philips Semiconductors PNP Silicon Darlington Power Transistor Original PDF
BDV64CF Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BDV64CF Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BDV64C-S Bourns TRANS DARLINGTON PNP 120V 12A 3SOT-93 Original PDF
BDV64C-S Bourns PNP DARLINGTON 120V 12A Original PDF

BDV64C Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BDV64C

Abstract: BDV64B B0V64B 8DV64B
Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , BDV64 Collector-base voltage (lE = 0) BDV64A 8DV64B BDV64C BDV64 CoRector-emitter voltage (iB = 0) BDV64A BDV64B BDV64C VCEO VC80 SY M BO L VALUE -60 -80 -100 -120 -60 -80 -100 -120 V EBO ·c >CM !b Ptot , not necessaruy irusuoe testing or ait parameters. fj BDV64, BDV64A, BDV64B, BDV64C PNP SILICON , (BR)CEO MIN -60 -80 -100 -120 BDV64A BDV64B BDV64C BDV64 BDV64A B0V64B BDV64C BDV64 BDV64A B0V64B


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PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 BDV64B B0V64B 8DV64B
BDV64B

Abstract: bdv64 Bdv64a
Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , voltage ( lE = 0) BDV64A BDV64B BDV64C BDV64 Collector-em itter voltage ( lB = 0) BDV64A BDV64B BDV64C Em , not necessarily include testing of all parameters. BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER , BDV64C V > = = = = = = = = = = CÛ O > -30 V -40 V -50 V -60 V -60 V -80 V -100 V -120 V -30 V -40 V -50 V -60 V -5 V lB = 0 CD II o BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C Tc


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PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 BDV64B Bdv64a
BDV64

Abstract: transistors BDV64B BDV64B BDV64A BDV64C
Text: BDV64C -120 BDV64 -60 BDV64A VCEO Collector-emitter voltage -80 Open base V BDV64B Emitter-base voltage -100 BDV64C VEBO UNIT -60 BDV64A Collector-base voltage , -80 IC=-30mA, IB=0 V BDV64B -100 BDV64C VCEsat TYP. -120 IC=-5A ,IB=-20mA -2.0 , Collector cut-off current ICBO BDV64A BDV64B BDV64C ICEO VCE=-30V, IB=0 BDV64A VCE=-40V, IB=0 SEM E ANG CH IN BDV64B BDV64C mA -0.4 -2.0 -0.4 -2.0 TOR


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PDF BDV64/64A/64B/64C BDV65/65A/65B/65C BDV64 BDV64B BDV64C BDV64A BDV64 transistors BDV64B BDV64B BDV64A BDV64C
1993 - BDV64

Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary Use , ) BDV64B V CBO -80 -100 BDV64C V -120 BDV64 Collector-emitter voltage (IB = 0) UNIT -60 BDV64 BDV64A VALUE -60 BDV64A BDV64B VCEO -80 -100 V -120 BDV64C , BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case , = -60 V -0.4 BDV64B -0.4 Collector cut-off VCB = -120 V IE = 0 BDV64C -0.4


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PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64B BDV64 BDV64A BDV64B BDV64C BDV65 BDV65A BDV65C
1993 - BDV64

Abstract: BDV64B BDV64A BDV64C BDV65 BDV65A BDV65B BDV65C BDV65, BDV64
Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary Use , ) BDV64B V CBO -80 -100 BDV64C V -120 BDV64 Collector-emitter voltage (IB = 0) UNIT -60 BDV64 BDV64A VALUE -60 BDV64A BDV64B VCEO -80 -100 V -120 BDV64C , BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case , = -60 V -0.4 BDV64B -0.4 Collector cut-off VCB = -120 V IE = 0 BDV64C -0.4


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PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64B BDV64 BDV64B BDV64A BDV64C BDV65 BDV65A BDV65C BDV65, BDV64
1993 - BDV64

Abstract: BDV65A BDV65B BDV65C BDV64A BDV64B BDV64C BDV65
Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , VCBO BDV64C Collector-emitter voltage (IB = 0) BDV64B UNIT -60 -80 -100 V -120 BDV64 BDV64A VALUE -60 VCEO BDV64C -80 -100 V -120 V EBO -5 V IC -12 , , BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 1997 electrical , -2 IB = 0 BDV64C IE = 0 BDV64 -0.4 IE = 0 BDV64A -0.4 IE = 0 BDV64B


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PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 BDV64 BDV65A BDV65C BDV64A BDV64B BDV64C BDV65
BDV64

Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
Text: G füAffSYS BDV64, BDV64A, BDV64B, BDV64C fUGTRONICS pNp SILICON POWER DARLINGTONS LIMITED â , = 0) BDV64 BDV64A BDV64B BDV64C VCBO -60 -80 -100 -120 V Collector-emitter voltage (lB = 0) BDV64 BDV64A BDV64B BDV64C VCEO -60 -80 -100 -120 V Emitter-base voltage VEBO -5 V Continuous collector , air temperature at the rate of 28 mW/°C. BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER , lB = 0 (see Note 4) BDV64A BDV64B BDV64C -80 -100 -120 V VCB = -30 V lB = 0 BDV64 -2 'ceo


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PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 BDV64A BDV64B BDV64C BDV65 BDV65A BDV65C
1993 - TIS140

Abstract: No abstract text available
Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary , 150°C free air temperature at the rate of 28 mW/°C. E T E L O S B O BDV64C BDV64A BDV64B VCEO BDV64C VEBO IC IB ICM Ptot Ptot Tj Tstg TL PRODUCT INFORMATION 1 JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDV64, BDV64A, BDV64B, BDV64C PNP SILICON , ) BDV64A BDV64B BDV64C VCB = -30 V ICEO Collector-emitter cut-off current VCB = -40 V VCB = -50 V VCB = -60


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PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 TIS140
1993 - Not Available

Abstract: No abstract text available
Text: BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary , Collector-base voltage (IE = 0) BDV64A BDV64B BDV64C BDV64 Collector-emitter voltage (IB = 0) BDV64A BDV64B BDV64C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous , SEPTEMBER 2002 Specifications are subject to change without notice. BDV64, BDV64A, BDV64B, BDV64C PNP , ) BDV64A BDV64B BDV64C VCB = -30 V ICEO Collector-emitter cut-off current VCB = -40 V VCB = -50 V VCB = -60


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PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 global/pdfs/TSP1203
BDV64

Abstract: transistors BDV64B BDV64A BDV64C BDV64B BDV65, BDV64
Text: Collector-base voltage -80 Open emitter V BDV64B -100 BDV64C -120 BDV64 -60 BDV64A , BDV64C VEBO UNIT -60 BDV64A VCBO VALUE -120 Open collector -5 V IC , BDV64C BDV64 Collector cut-off current BDV64A -0.4 -2.0 mA -0.4 -2.0 VCE=-40V, IB=0 BDV64B -0.4 -2.0 VCE=-30V, IB=0 VCE=-50V, IB=0 BDV64C ICEO UNIT -80 IC=-30mA, IB=0 BDV64 ICBO MAX -60 BDV64C VCEsat TYP. VCE=-60V, IB=0 -2 Emitter cut-off current


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PDF BDV64/64A/64B/64C BDV65/65A/65B/65C BDV64 BDV64B BDV64C BDV64A BDV64 transistors BDV64B BDV64A BDV64C BDV64B BDV65, BDV64
transistors BDV64B

Abstract: BDV64 BDV64B BDV64A BDV64C BDV65, BDV64 64b diode
Text: V -100 BDV64C VEBO V -100 BDV64C VCEO UNIT -120 Open collector -5 V , MIN MAX UNIT -60 BDV64A -80 IC=-30mA, IB=0 V BDV64B -100 BDV64C VCEsat , -2.0 BDV64 VCE=-30V, IB=0 BDV64A VCE=-40V, IB=0 BDV64B VCE=-50V, IB=0 BDV64C ICEO -2.0 BDV64C ICBO IC=-5A ,IB=-20mA BDV64 VBE Collector-emitter saturation


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PDF BDV64/64A/64B/64C BDV65/65A/65B/65C BDV64 BDV64A BDV64B BDV64C transistors BDV64B BDV64 BDV64B BDV64A BDV64C BDV65, BDV64 64b diode
BDV65, BDV64

Abstract: BOV65B transistor npn 3-326 BDV65B-BOV64B BOV65 transistors BDV65c bdv64b transistor transistor BDv65c 150EC bdv65a
Text: MOTORCLA SC MOTOROLA XSTRS /R F 12E D | b3b7254 D 00` 47bc l 7 | T-33-tf T-33-U TECHNICAL DATA SEMICONDUCTOR BDV65 BDV65A BDV65B BDV6SC NPN BDV64 BDV64A BDV64B BDV64C PNP COMPLEMENTARY SILICON PLASTIC POWER DARLINGTONS . for use as output devices in complementary general purpose amplifier applications. · High DC Current Gain HFE = 1000 (min.) @ 5 Adc · Monolithic Construction with , b o l VCEO VcB Ve b ic B D V 65 B D V 64 B D V 6 5A BDV64A B D V 65B BDV64B B D V 65C BDV64C Unit


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PDF b3b7254 T-33-tf T-33-U BDV65 BDV65A BDV65B BDV64 BDV64A BDV64B BDV64C BDV65, BDV64 BOV65B transistor npn 3-326 BDV65B-BOV64B BOV65 transistors BDV65c bdv64b transistor transistor BDv65c 150EC
KT972A

Abstract: BD876 KT973B KT973A kt8156a KT973 KT972B KT972 BD875 KT8116A
Text: PNP 50.0 60 80 100 NPN 60,0 330 BDV65A BDV65B BDV65C BDV64A BDV64B BDV64C BD875 NPN


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PDF KT8115A KT8115Á KT8115B KT8116A KT8116Á KT8116B KT8214A KT8214Á KT8214B KT8215A KT972A BD876 KT973B KT973A kt8156a KT973 KT972B KT972 BD875 KT8116A
MN2488

Abstract: T0220 MJ11033-MOT T0126 2SD2390 BCV47 BD678 MPSA64 mn2488 pnp TIP125
Text: 125 1000 T0220 BDV64C 120 12 125 1000 SOT93 BDW84D 120 15 150 750 SOT93 BDX66C 120 16 150 1000 T03


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PDF BCV27 MPSA64 BC516 BD675A T0126 BD678 BSP61 OT223 TIP125 MN2488 T0220 MJ11033-MOT T0126 2SD2390 BCV47 mn2488 pnp
T0220

Abstract: 2SB1647 BDT62C MJ2501 BSP61 BDX47 BD682 BD680 TIP117 BCV26
Text: SOT93 BDV64C 12 120 125 1000 SOT93 BDW94C 12 100 80 750 T0220 2SB1647 15 150 130 SOT93 BDW84C 15


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PDF BC516 BCV26 MPSA64 BDX47 T0126 BSP61 OT223 TIP117 T0220 BD678 T0220 2SB1647 BDT62C MJ2501 BD682 BD680
BUS47AP

Abstract: BUS48AP BOV65C BUS47P BUT51P MJH16010A tip142 BUT51 BU426A BUS48A
Text: 125 125 120 BOV65C BDV64C 1k min 5 125 350 BU323P 150 min 6 15 15 6 125 400 BU323AP 150


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PDF O-218 MJH16032 MJH16034 MJH16002 MJH16004 MJH16002A MJH16024 MJH16026 BU426 BU426A BUS47AP BUS48AP BOV65C BUS47P BUT51P MJH16010A tip142 BUT51 BU426A BUS48A
R3381

Abstract: R3498 a101 transistor R3381-S BDW85-S buv49 transistor 1015 TIPL763 883 transistor TIC263D
Text: BDV64C BDV64C-S BDV64-S BDV65 BDV65A BDV65A-S BDV65B BDV65B-S BDV65C BDV65C-S BDV65-S BDV66


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PDF OT-93 BLBF40 MP150SG, MG15G-1040R, cusV47-S BUV48 BUV48A BUV48A-S R3381 R3498 a101 transistor R3381-S BDW85-S buv49 transistor 1015 TIPL763 883 transistor TIC263D
philips BDV64A

Abstract: T1P121 BDV66A PHILIPS SEMICONDUCTOR 200v 4A pnp bdv65a philips BDV65 PHILIPS SEMICONDUCTOR BU807 PHILIPS SEMICONDUCTOR B0646 philips TIP147 2a 100v NPN
Text: 10A BDV65 BDV65A BDV65B BDV65C BDV64 BDV64A BDV64B BDV64C SOT-93 12A 60V 80V 100V 120V 1000 at 5A 2V


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PDF TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD675 BD677 BD679 philips BDV64A T1P121 BDV66A PHILIPS SEMICONDUCTOR 200v 4A pnp bdv65a philips BDV65 PHILIPS SEMICONDUCTOR BU807 PHILIPS SEMICONDUCTOR B0646 philips TIP147 2a 100v NPN
philips BDV64A

Abstract: BDX67
Text: BDV65B BDV65C BDV64 BDV64A BDV64B BDV64C SOT-93 12A 60V 80V 100V 120V 1000 at 5A


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PDF bb53T31 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD679 BD681 philips BDV64A BDX67
Not Available

Abstract: No abstract text available
Text: TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS • Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C • 125 W at 25°C Case Temperature • 12 A Continuous Collector Current • Minimum hFE of 1000 at 4 V, 5 A SOT-9C PACKAGE (TO PVIEW) B C 1 C C y~~ *o O 3 b C Pin 2 is in electrical contact with the


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PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C BDV65 BDV65A
BDV65

Abstract: bdv65b 8DV65C BOV65 BOV64A bdv65a
Text: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Copyright© 1997, Power innovations Limited, UK JUN E 1993 - REVISED M ARCH 1997 · · · · Designed (or Complementary Use with BDV64, BOV64A, BDV64B and BDV64C 125 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A C C E C B C SOT-93 PACKAGE (TOP VIEW) Pin 2 ts in electrical coniaci with the mounting base. absolute maximum ratings at 25 C case temperature (unless otherwise noted) RATING BOV65


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PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BOV64A, BDV64B BDV64C OT-93 BOV65 BDV65 bdv65b 8DV65C BOV64A bdv65a
r3381

Abstract: R3498 buv49 MP150s tipl763 TIC263M BDW85-S transistor BD245 BD250C-S buv48s
Text: BDV64A-S BDV64B BDV64B-S BDV64C BDV64C-S BDV64-S BDV65 BDV65A BDV65A-S BDV65B BDV65B-S BDV65C


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PDF OT-93 BLBF40 MP150SG, MG15G-1040R, cusV47-S BUV48 BUV48A BUV48A-S r3381 R3498 buv49 MP150s tipl763 TIC263M BDW85-S transistor BD245 BD250C-S buv48s
1993 - BDV65

Abstract: BDV65B BDV65A BDV65C BDV64 BDV64A BDV64B BDV64C
Text: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C 125 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0


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PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C OT-93 BDV65B BDV65 BDV65B BDV65A BDV65C BDV64 BDV64A BDV64C
1993 - BDV65

Abstract: No abstract text available
Text: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C 125 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A C B SOT-93 PACKAGE (TOP VIEW) 1 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BDV65 Collector-base voltage (IE = 0) BDV65A BDV65B BDV65 SYMBOL VALUE 60


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PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C OT-93 BDV65
1993 - BDV64

Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
Text: BDV65, BDV65A, BDV65B, BDV65C NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C 125 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0


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PDF BDV65, BDV65A, BDV65B, BDV65C BDV64, BDV64A, BDV64B BDV64C OT-93 BDV65B BDV64 BDV64A BDV64C BDV65 BDV65A BDV65B BDV65C
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