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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BDV64B ON Semiconductor Rochester Electronics 877 $1.30 $1.06
BDV64B ON Semiconductor Bristol Electronics 20 - -
BDV64BG ON Semiconductor TME Electronic Components 97 $1.90 $1.14
BDV64BG ON Semiconductor Future Electronics - $0.95 $0.76
BDV64BG ON Semiconductor Avnet 270 €1.08 €0.72
BDV64BG ON Semiconductor Rochester Electronics 542 $1.23 $1.00
BDV64BG ON Semiconductor Newark element14 215 $1.95 $0.94
BDV64BG ON Semiconductor Avnet - $0.80 $0.75
BDV64BG ON Semiconductor Schukat electronic 1,440 €1.03 €0.76
BDV64BG ON Semiconductor Chip1Stop 30 $2.29 $1.86
BDV64BG ON Semiconductor Chip1Stop 17 $3.03 $1.55
BDV64BG ON Semiconductor element14 Asia-Pacific 215 $2.79 $1.33
BDV64BG ON Semiconductor Farnell element14 275 £1.30 £0.83
BDV64BG ON Semiconductor Wuhan P&S 10 $1.38 $0.95

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BDV64B datasheet (25)

Part Manufacturer Description Type PDF
BDV64B Bourns PNP SILICON POWER DARLINGTONS Original PDF
BDV64B Motorola Complementary Silicon Plastic Power Darlingtons Original PDF
BDV64B On Semiconductor TRANS DARLINGTON BJT PNP 100V 10A 3TO-218 Original PDF
BDV64B On Semiconductor DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS Original PDF
BDV64B On Semiconductor BDV64 - TRANSISTOR 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-218, PLASTIC, CASE 340D-02, 3 PIN, BIP General Purpose Power Original PDF
BDV64B Power Innovations PNP SILICON POWER DARLINGTONS Original PDF
BDV64B Mospec POWER TRANSISTORS(12A,125W) Scan PDF
BDV64B Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
BDV64B Motorola European Master Selection Guide 1986 Scan PDF
BDV64B Others Shortform Transistor PDF Datasheet Scan PDF
BDV64B Others Transistor Replacements Scan PDF
BDV64B Others Cross Reference Datasheet Scan PDF
BDV64B Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BDV64B Others Shortform Transistor Datasheet Guide Scan PDF
BDV64B Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BDV64B Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
BDV64B STMicroelectronics Shortform Data Book 1988 Scan PDF
BDV64B Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan PDF
BDV64B Transys Electronics Darlington Bipolar Transistor, PNP, 100V at Tc=25C, TO-218, 3-Pin Scan PDF
BDV64BF Philips Semiconductors PNP Silicon Darlington Power Transistor Original PDF

BDV64B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BDV64B

Abstract: bdv64 Bdv64a
Text: BDV64, BDV64A, BDV64B , BDV64C PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , voltage ( lE = 0) BDV64A BDV64B BDV64C BDV64 Collector-em itter voltage ( lB = 0) BDV64A BDV64B BDV64C Em , not necessarily include testing of all parameters. BDV64, BDV64A, BDV64B , BDV64C PNP SILICON POWER , -120 TYP MAX UNIT breakdown voltage -30 mA lB = 0 (see Note 4) BDV64A BDV64B , -40 V -50 V -60 V -5 V lB = 0 CD II o BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C Tc


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PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 BDV64B Bdv64a
1993 - BDV64

Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
Text: BDV64, BDV64A, BDV64B , BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary Use , ) BDV64B V CBO -80 -100 BDV64C V -120 BDV64 Collector-emitter voltage (IB = 0) UNIT -60 BDV64 BDV64A VALUE -60 BDV64A BDV64B VCEO -80 -100 V -120 BDV64C , BDV64, BDV64A, BDV64B , BDV64C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case , V IB = 0 BDV64A -2 cut-off current VCB = -50 V IB = 0 BDV64B -2 V VCB


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PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64B BDV64 BDV64A BDV64B BDV64C BDV65 BDV65A BDV65C
BDV64C

Abstract: BDV64B B0V64B 8DV64B
Text: BDV64, BDV64A, BDV64B , BDV64C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , ) BDV64A BDV64B BDV64C VCEO VC80 SY M BO L VALUE -60 -80 -100 -120 -60 -80 -100 -120 V EBO ·c >CM !b Ptot , not necessaruy irusuoe testing or ait parameters. fj BDV64, BDV64A, BDV64B , BDV64C PNP SILICON , (BR)CEO MIN -60 -80 -100 -120 BDV64A BDV64B BDV64C BDV64 BDV64A B0V64B BDV64C BDV64 BDV64A B0V64B BDV64C BOV64 BOV64A BDV64B BDV64C TYP MAX UNIT ic = -30 mA ¡B - 0 , _, . . (see Note 4


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PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 BDV64B B0V64B 8DV64B
Y182

Abstract: transistor K 1413 bdv64 transistors BDV64B BDV64B
Text: i BDV64; 64A _ I l BDV64B ; 64C PHILIPS , 5,5 -0 ,4 ± 0 ,0 5 - 1,6 7 Z 96696 April 1988 629 BDV64; 64A BDV64B ; 64C PHILIPS C , transistors BDV64;. 64A BDV64B ; 64C 5bE ] ) 711Gfi2b DD433MM lbT T- 33- 31 hFE hFE hFE ~ V BE - v , . October 1985 631 BDV64; 64A BDV64B : 64C PHILIPS L SbE D INTERNATIONAL 7 110 a2b , BDV64; 64A BDV64B ; 64C SbE J > 711005b 004334b T31 * P H I N T -3 3 -3 1 PHILIPS INTERNATIONAL


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PDF BDV64; BDV64B; 0D43342 BDV64 -BDV64B: 711002b T-33-31 Y182 transistor K 1413 bdv64 transistors BDV64B BDV64B
BDV64

Abstract: transistors BDV64B BDV64B BDV64A BDV64C
Text: CONDITIONS DUC ICON BDV64 SEM E -80 Open emitter ANG INCH BDV64B V -100 , BDV64B Emitter-base voltage -100 BDV64C VEBO UNIT -60 BDV64A Collector-base voltage , -80 IC=-30mA, IB=0 V BDV64B -100 BDV64C VCEsat TYP. -120 IC=-5A ,IB=-20mA -2.0 , Collector cut-off current ICBO BDV64A BDV64B BDV64C ICEO VCE=-30V, IB=0 BDV64A VCE=-40V, IB=0 SEM E ANG CH IN BDV64B BDV64C mA -0.4 -2.0 -0.4 -2.0 TOR


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PDF BDV64/64A/64B/64C BDV65/65A/65B/65C BDV64 BDV64B BDV64C BDV64A BDV64 transistors BDV64B BDV64B BDV64A BDV64C
1993 - TIS140

Abstract: No abstract text available
Text: BDV64, BDV64A, BDV64B , BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary , (unless otherwise noted) RATING BDV64 Collector-base voltage (IE = 0) BDV64A BDV64B BDV64 SYMBOL VALUE , 150°C free air temperature at the rate of 28 mW/°C. E T E L O S B O BDV64C BDV64A BDV64B VCEO , 2002 Specifications are subject to change without notice. BDV64, BDV64A, BDV64B , BDV64C PNP SILICON , ) BDV64A BDV64B BDV64C VCB = -30 V ICEO Collector-emitter cut-off current VCB = -40 V VCB = -50 V VCB = -60


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PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 TIS140
BDV64

Abstract: BDV64A BDV64B BDV64C BDV65 BDV65A BDV65B BDV65C
Text: G füAffSYS BDV64, BDV64A, BDV64B , BDV64C fUGTRONICS pNp SILICON POWER DARLINGTONS LIMITED â , = 0) BDV64 BDV64A BDV64B BDV64C VCBO -60 -80 -100 -120 V Collector-emitter voltage (lB = 0) BDV64 BDV64A BDV64B BDV64C VCEO -60 -80 -100 -120 V Emitter-base voltage VEBO -5 V Continuous collector , air temperature at the rate of 28 mW/°C. BDV64, BDV64A, BDV64B , BDV64C PNP SILICON POWER , lB = 0 (see Note 4) BDV64A BDV64B BDV64C -80 -100 -120 V VCB = -30 V lB = 0 BDV64 -2 'ceo


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PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 BDV64A BDV64B BDV64C BDV65 BDV65A BDV65C
1993 - BDV64

Abstract: BDV64B BDV64A BDV64C BDV65 BDV65A BDV65B BDV65C BDV65, BDV64
Text: BDV64, BDV64A, BDV64B , BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary Use , ) BDV64B V CBO -80 -100 BDV64C V -120 BDV64 Collector-emitter voltage (IB = 0) UNIT -60 BDV64 BDV64A VALUE -60 BDV64A BDV64B VCEO -80 -100 V -120 BDV64C , BDV64, BDV64A, BDV64B , BDV64C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case , V IB = 0 BDV64A -2 cut-off current VCB = -50 V IB = 0 BDV64B -2 V VCB


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PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64B BDV64 BDV64B BDV64A BDV64C BDV65 BDV65A BDV65C BDV65, BDV64
1993 - Not Available

Abstract: No abstract text available
Text: BDV64, BDV64A, BDV64B , BDV64C PNP SILICON POWER DARLINGTONS Designed for Complementary , Collector-base voltage (IE = 0) BDV64A BDV64B BDV64C BDV64 Collector-emitter voltage (IB = 0) BDV64A BDV64B , SEPTEMBER 2002 Specifications are subject to change without notice. BDV64, BDV64A, BDV64B , BDV64C PNP , ) BDV64A BDV64B BDV64C VCB = -30 V ICEO Collector-emitter cut-off current VCB = -40 V VCB = -50 V VCB = -60 , °C TC = 150°C TC = 150°C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B BDV64C BDV64 BDV64A BDV64B


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PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 global/pdfs/TSP1203
1993 - BDV64

Abstract: BDV65A BDV65B BDV65C BDV64A BDV64B BDV64C BDV65
Text: BDV64, BDV64A, BDV64B , BDV64C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , (unless otherwise noted) RATING SYMBOL BDV64 Collector-base voltage (IE = 0) BDV64A BDV64B VCBO BDV64C Collector-emitter voltage (IB = 0) BDV64B UNIT -60 -80 -100 V -120 , , BDV64A, BDV64B , BDV64C PNP SILICON POWER DARLINGTONS JUNE 1993 - REVISED MARCH 1997 electrical , MAX -80 BDV64B -100 BDV64A -2 cut-off current V CB = -50 V IB = 0 BDV64B


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PDF BDV64, BDV64A, BDV64B, BDV64C BDV65, BDV65A, BDV65B BDV65C OT-93 BDV64 BDV64 BDV65A BDV65C BDV64A BDV64B BDV64C BDV65
BDV64

Abstract: transistors BDV64B BDV64A BDV64C BDV64B BDV65, BDV64
Text: Collector-base voltage -80 Open emitter V BDV64B -100 BDV64C -120 BDV64 -60 BDV64A VCEO Collector-emitter voltage -80 Open base V BDV64B Emitter-base voltage -100 , MIN VBE BDV64A V BDV64B -100 -120 Collector-emitter saturation voltage IC , =150 VCB=-120V, IE=0 VCB=-60V, IE=0;TC=150 -0.4 -2.0 Collector cut-off current BDV64A BDV64B , =0 BDV64B -0.4 -2.0 VCE=-30V, IB=0 VCE=-50V, IB=0 BDV64C ICEO UNIT -80 IC=-30mA, IB


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PDF BDV64/64A/64B/64C BDV65/65A/65B/65C BDV64 BDV64B BDV64C BDV64A BDV64 transistors BDV64B BDV64A BDV64C BDV64B BDV65, BDV64
bdv64b transistor

Abstract: ic 7493 BDV64 BDV64B transistors BDV64B BDV65 7Z77491
Text:  BDV64; 64A BDV64B ; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors , Mounting instructions and Accessories. 7Z9669S April 1988 657 BDV64; 64A BDV64B ; 64C ^ CIRCUIT , BDV64B ; 64C CHARACTERISTICS Tj = 25 °C unless otherwise specified. D.C. current gain* -lc = 1 A , ; 64A BDV64B ; 64C v cc V|M" T 7Z78130 ~VIM = 16,5 V -vCc = 16 V VBB = 6,5 V R1 = 56 n R2 = , circuit. 660 October 1980 Silicon Darlington power transistors BDV64; 64A BDV64B ; 64C Fig. 5 Safe


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PDF BDV64; BDV64B; BDV65, BDV64 7Z9669S bdv64b transistor ic 7493 BDV64B transistors BDV64B BDV65 7Z77491
Not Available

Abstract: No abstract text available
Text: BDV64; 64A BDV64B ; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors , instructions and Accessories. Y April 1988 b bS3^31 00347fifc> 53b 629 BDV64; 64A BDV64B ; 64C , 0 3 4 7 5 7 472 ka mA mA mA BDV64; 64A BDV64B ; 64C Silicon Darlington power , 7 r October 1985 631 BDV64; 64A BDV64B ; 64C 16,5 V 16 V 6,5 V 56 O 4ion 560 n , =] E4S BDV64; 64A BDV64B ; 64C Silicon Darlington power transistors 7 V Fig. 5 Safe


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PDF BDV64; BDV64B; BDV65 BDV64 bbS3T31 Q0347TE
transistors BDV64B

Abstract: BDV64 BDV64B BDV64A BDV64C BDV65, BDV64 64b diode
Text: VCBO Collector-base voltage BDV64A VALUE -60 Open emitter -80 BDV64B Collector-emitter voltage -120 BDV64 -60 BDV64A Open base -80 BDV64B Emitter-base voltage , MIN MAX UNIT -60 BDV64A -80 IC=-30mA, IB=0 V BDV64B -100 BDV64C VCEsat , =-30V, IE=0;TC=150 -0.4 -2.0 BDV64A VCB=-80V, IE=0 VCB=-40V, IE=0;TC=150 -0.4 -2.0 BDV64B , -2.0 BDV64 VCE=-30V, IB=0 BDV64A VCE=-40V, IB=0 BDV64B VCE=-50V, IB=0 BDV64C


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PDF BDV64/64A/64B/64C BDV65/65A/65B/65C BDV64 BDV64A BDV64B BDV64C transistors BDV64B BDV64 BDV64B BDV64A BDV64C BDV65, BDV64 64b diode
2012 - transistors BDV64B

Abstract: BDV65BG npn power amplifier circuit all number npn pnp transistor pin out data BDV64BG bdv64
Text: BDV65B(NPN), BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as output , PNP COLLECTOR 2,4 BASE 1 BASE 1 EMITTER 3 BDV65B EMITTER 3 BDV64B THERMAL , 1 Publication Order Number: BDV65B/D BDV65B (NPN), BDV64B (PNP) MARKING DIAGRAMS TO , ORDERING INFORMATION Device Order Number BDV65BG BDV64BG BDV65BG BDV64BG Package Type TO-218 (Pb-Free) TO , Vdc Vdc BDV65B (NPN), BDV64B (PNP) http://onsemi.com 3 BDV65B (NPN), BDV64B (PNP) NPN 10K


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PDF BDV65B BDV64B BDV65B/D transistors BDV64B BDV65BG npn power amplifier circuit all number npn pnp transistor pin out data BDV64BG bdv64
Not Available

Abstract: No abstract text available
Text: plem entary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in , TEMPERATURE (°C) Figure 1. Power Derating REV 8 MOTOROLA >M otorola, Inc. 1996 BDV65B BDV64B , hFE , D CURRENT GAIN C BDV65B BDV64B 0.1 1 10 0.1 1 Figure 2. DC Current Gain , TC = 25°C * \ \ : -BONDING WIRE LIMIT s nv A , BDV65B, BDV64B , Device Data 3 (NORMALIZED) r(t), TRANSIENT THERMAL RESISTANCE BDV65B BDV64B t, TIME (ms


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PDF BDV65B/D BDV65B BDV64B 340D-02
BDV64

Abstract: philips BDV64A bdv64b transistor transistors BDV64B bdv64s BDV64B BDV65 BDV64 C
Text: BDV64; 64A BDV64B ; 64C PHILIPS INTERNATIONAL SbE D ■711002b 0043342 31L «PHIN T , BDV64B ; 64C \ PHILIPS INTERNATIONAL CIRCUIT DIAGRAM SbE T> ?110aSb DDM33M3 255 BIPHIN Tâ , ;- 64A BDV64B ; 64C 711002b 0043344 lbT IPHIN -16 v hFE hFE hFE -VBE "vCEsat Cc fhfe VF Vf Tâ , This Material Copyrighted By Its Respective Manufacturer BDV64; 64A BDV64B : 64C philips international , Silicon Darlington power transistors PHILIPS INTERNATIONAL 10 -le (A) BDV64; 64A BDV64B : 64C 5bE D


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PDF BDV64; BDV64B; 711002b T-33-3! BDV65, BDV64 7Z7749I- philips BDV64A bdv64b transistor transistors BDV64B bdv64s BDV64B BDV65 BDV64 C
2012 - Not Available

Abstract: No abstract text available
Text: BDV65B (NPN), BDV64B  (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as , BDV64B SOT−93 (TO−218) CASE 340D 1 2 3 TO−247 CASE 340L STYLE 3 NOTE: Effective , . 14 1 Publication Order Number: BDV65B/D BDV65B (NPN), BDV64B (PNP) MARKING DIAGRAMS TOâ , ˆ’218 (Pb−Free) 30 Units / Rail BDV64BG TO−218 (Pb−Free) 30 Units / Rail BDV65BG TO−247 (Pb−Free) 30 Units / Rail BDV64BG TO−247 (Pb−Free) 30 Units / Rail Device Order Number


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PDF BDV65Bâ BDV64Bâ BDV65B/D
2001 - BDV64B

Abstract: BDV65B bdv64b transistor
Text: ON Semiconductort NPN BDV65B Complementary Silicon Plastic Power Darlingtons PNP BDV64B . . . for use as output devices in complementary general purpose amplifier applications. · , ELECTRICAL CHARACTERISTICS BDV65B BDV64B BDV65B BDV64B 10 VBE(sat) @ IC/IB = 250 1 0.1 V , BREAKDOWN LIMITED @ TJ v 150°C THERMAL LIMIT @ TC = 25°C BONDING WIRE LIMIT 1 BDV65B, BDV64B 10 , Response http://onsemi.com 3 50 100 500 1000 BDV65B BDV64B PACKAGE DIMENSIONS CASE


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PDF BDV65B BDV64B r14525 BDV65B/D BDV64B BDV65B bdv64b transistor
transistors BDV64B

Abstract: bdv64b transistor
Text: Resistors BDV65B PNP BDV64B DARLINGTONS 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 6 0 -8 0 , Data BDV65B BDV64B ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector-Emitter , Power Transistor Device Data 3-209 BDV65B BDV64B PNP hpE. D C CURRENT GAIN IC, COLLECTOR , Operating Area 3-210 Motorola Bipolar Power Transistor Device Data BDV65B BDV64B r(t), TRANSIENT


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PDF BDV65B BDV64B BDV65B transistors BDV64B bdv64b transistor
2008 - bdv64b

Abstract: BDV64BG transistor packages sot93 BDV65B BDV65BG
Text: ORDERING INFORMATION Device BDV65B BDV65BG BDV64B BDV64BG © Semiconductor Components Industries , BDV65B(NPN), BDV64B (PNP) Complementary Silicon Plastic Power Darlingtons . . . for use as , COLLECTOR 2 BASE 1 BASE 1 EMITTER 3 BDV65B EMITTER 3 BDV64B THERMAL CHARACTERISTICS , 0.4 0.6 0.8 1.0 BDV65B (NPN), BDV64B (PNP) BDV65B (NPN), BDV64B (PNP) NPN PNP 10K , 1 BDV65B, BDV64B 1 10 There are two limitations on the power handling ability of a


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PDF BDV65B BDV64B BDV65B/D BDV64BG transistor packages sot93 BDV65BG
1996 - Motorola Power Transistor Data Book

Abstract: MOTOROLA TRANSISTOR T2 Motorola Bipolar Power Transistor Data 03 transistor BDV65B Motorola 801 TRansistor L 701 bipolar transistor power transistors Bipolar Junction Transistor
Text: BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in , ELECTRICAL CHARACTERISTICS BDV65B BDV64B BDV65B BDV64B NPN PNP 10K hFE , DC CURRENT GAIN , °C THERMAL LIMIT @ TC = 25°C BONDING WIRE LIMIT v 1 v BDV65B, BDV64B 1 10 50 30 VCE , Transistor Device Data 3 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BDV65B BDV64B 1.0 0.5 , Power Transistor Device Data 1000 BDV65B BDV64B PACKAGE DIMENSIONS C Q B U S NOTES


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PDF BDV65B/D BDV65B BDV64B BDV65B/D* Motorola Power Transistor Data Book MOTOROLA TRANSISTOR T2 Motorola Bipolar Power Transistor Data 03 transistor BDV65B Motorola 801 TRansistor L 701 bipolar transistor power transistors Bipolar Junction Transistor
1995 - motorola 572 transistor

Abstract: MOTOROLA TRANSISTOR T2 transistors BDV64B MOTOROLA TRANSISTOR BDV64B BDV65B
Text: . Complementary Silicon Plastic Power Darlingtons BDV65B PNP BDV64B NPN SEMICONDUCTOR TECHNICAL DATA , mAdc, IB = 0) OFF CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS BDV65B BDV64B BDV65B BDV64B NPN PNP 10K hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 4 V 10K , v 1 v BDV65B, BDV64B 1 10 50 30 VCE, COLLECTOR­EMITTER VOLTAGE (V) 100 Figure , ), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BDV65B BDV64B 1.0 0.5 0.2 D = 0.5 0.2 0.1 0.1


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PDF BDV65B/D* BDV65B/D motorola 572 transistor MOTOROLA TRANSISTOR T2 transistors BDV64B MOTOROLA TRANSISTOR BDV64B BDV65B
1996 - BDV64B

Abstract: MOTOROLA TRANSISTOR BDV65B bdv64b transistor
Text: BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in , mAdc, IB = 0) OFF CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS BDV65B BDV64B BDV65B BDV64B NPN PNP 10K hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 4 V 10K , v 1 v BDV65B, BDV64B 1 10 50 30 VCE, COLLECTOR­EMITTER VOLTAGE (V) 100 Figure , ), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BDV65B BDV64B 1.0 0.5 0.2 D = 0.5 0.2 0.1 0.1


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PDF BDV65B/D BDV65B BDV64B BDV65B/D* BDV64B MOTOROLA TRANSISTOR BDV65B bdv64b transistor
2006 - BDV64B

Abstract: BDV65B
Text: BDV64B . . . for use as output devices in complementary general purpose amplifier applications. · , mAdc, IB = 0) OFF CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS BDV65B BDV64B BDV65B BDV64B 10 VBE(sat) @ IC/IB = 250 1 0.1 V, VOLTAGE (V) V, VOLTAGE (V) 10 0.1 , °C THERMAL LIMIT @ TC = 25°C BONDING WIRE LIMIT 1 BDV65B, BDV64B 10 50 30 VCE, COLLECTOR-EMITTER , ://onsemi.com 3 50 100 500 1000 BDV65B BDV64B PACKAGE DIMENSIONS CASE 340D-02 ISSUE E C Q


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PDF BDV65B BDV64B BDV65B/D BDV64B BDV65B
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