The Datasheet Archive

BDT61B datasheet (13)

Part Manufacturer Description Type PDF
BDT61B Bourns NPN SILICON POWER DARLINGTONS Original PDF
BDT61B Philips Semiconductors Silicon Darlington Power Transistor Original PDF
BDT61B Power Innovations NPN SILICON POWER DARLINGTONS Original PDF
BDT61B Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
BDT61B Others Shortform Transistor PDF Datasheet Scan PDF
BDT61B Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BDT61B Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BDT61B Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
BDT61BF Philips Semiconductors Silicon Darlington Power Transistor Original PDF
BDT61BF Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BDT61BF Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BDT61BF Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
BDT61B-S Bourns NPN DARLINGTON 100V 4A Original PDF

BDT61B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1993 - BDT60C

Abstract: BDT61A BDT60 BDT60A BDT60B BDT61 BDT61B BDT61C
Text: BDT61, BDT61A, BDT61B , BDT61C NPN SILICON POWER DARLINGTONS Designed for Complementary Use , = 0) BDT61B V CBO 80 100 BDT61C V 120 BDT61 Collector-emitter voltage (IB = 0) UNIT 60 BDT61 BDT61A VALUE 60 BDT61A BDT61B VCEO 80 100 V 120 BDT61C , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDT61, BDT61A, BDT61B , BDT61C , 0.5 cut-off current VCE = 50 V IB = 0 BDT61B 0.5 V VCE = 60 V 0.2 Collector


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PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61B BDT60C BDT61A BDT60 BDT60A BDT61 BDT61B BDT61C
1993 - sas110

Abstract: BDT61C BDT61B BDT61A BDT61 BDT60C BDT60B BDT60A BDT60 750-AT-1
Text: BDT61, BDT61A, BDT61B , BDT61C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , BDT61B VALUE VCBO 80 100 BDT61C V 120 BDT61 Collector-emitter voltage (IB = 0) UNIT 60 60 BDT61A BDT61B VCEO BDT61C 80 100 V 120 V EBO 5 V , , BDT61A, BDT61B , BDT61C NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 electrical , MAX 80 BDT61B 100 BDT61A 0.5 cut-off current V CE = 50 V IB = 0 BDT61B


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PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61 sas110 BDT61C BDT61B BDT61A BDT61 BDT60C BDT60A BDT60 750-AT-1
1993 - BDT61

Abstract: BDT60C BDT61C BDT60 BDT60A BDT60B BDT61A BDT61B
Text: BDT61, BDT61A, BDT61B , BDT61C NPN SILICON POWER DARLINGTONS Designed for Complementary Use , = 0) BDT61B V CBO 80 100 BDT61C V 120 BDT61 Collector-emitter voltage (IB = 0) UNIT 60 BDT61 BDT61A VALUE 60 BDT61A BDT61B VCEO 80 100 V 120 BDT61C , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDT61, BDT61A, BDT61B , BDT61C , 0.5 cut-off current VCE = 50 V IB = 0 BDT61B 0.5 V VCE = 60 V 0.2 Collector


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PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61B BDT61 BDT60C BDT61C BDT60 BDT60A BDT61A BDT61B
BDT61

Abstract: dg43550 BDT60 BDT61B QGM3221 diagram DARLINGTON
Text: BDT61;61A BDT61B ;61C PHILIPS INTERNATIONAL SbE D I SILICON DARLINGTON POWER TRANSISTORS , -1991 507 This Material Copyrighted By Its Respective Manufacturer BDT61;61A BDT61B ;61C j \ PHILIPS , =3V BDT61;61A BDT61B ;61C 711002b 0043222 bl7 PHIN IM 0 — ru T- -33-2 9 'CBO < 0,2 mA 'CBO < 0,5 , BDT61;61A BDT61B :61C PHILIPS INTERNATIONAL CHARACTERISTICS (continued) Diode, forward voltage lF= 1,5 , BDT61B ;61C 711Gfl2L, 00M322M 4tT*PHIN T-33-2^ 7Z82S58 m ip= 0,1 ms 10 100 d.c. : BDT61 BDT61A


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PDF BDT61 BDT61B 711002b DG43550 BDT60, 711005b 7Z82099 dg43550 BDT60 QGM3221 diagram DARLINGTON
1993 - Not Available

Abstract: No abstract text available
Text: BDT61, BDT61A, BDT61B , BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary , 80 100 BDT61C 60 BDT61A BDT61B V CEO BDT61C Emitter-base voltage V 120 BDT61 Collector-emitter voltage (IB = 0) UNIT 60 E T E L O S B O BDT61B VALUE , BDT61, BDT61A, BDT61B , BDT61C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case , BDT61B 100 BDT61C Collector-emitter TYP 120 V ICEO IC = 30 mA IB = 0 VCE =


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PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61
5BE1

Abstract: bdt61 Darlington NPN Silicon Diode
Text: BDT61;61A BDT61B ;61C PHILIPS INTERNATIONAL SbE ] > I 711002(3 0 0 4 3 5 5 0 Ö44 » P H I N , August-1991 507 BDT61;61A BDT61B ;61C / \ PHILIPS INTERNATIONAL SbE T > 711065b , power transistors BDT61;61A BDT61B ;61C 5bE J > 711002b 0043222 bl7 P H I N ~ T- - 3 3 - 2 9 'CBO , %. " V August' 1988 509 - BDT61;61A BDT61B :61C PHILIPS INTERNATIONAL CHARACTERISTICS , BDT61;61A BDT61B ;61C 5bE D 711002b 0043224 4^T T -3 3 -2 9 PHILIPS INTERNATIONAL PHIN Fig. 6


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PDF BDT61 BDT61B BDT60, O-220. 7110fl2b G04B527 B2097 5BE1 Darlington NPN Silicon Diode
1993 - Not Available

Abstract: No abstract text available
Text: BDT61, BDT61A, BDT61B , BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary , ) BDT61A BDT61B VALUE 60 V CBO 80 100 BDT61C 60 BDT61A BDT61B V CEO BDT61C , 2002 Specifications are subject to change without notice. 1 BDT61, BDT61A, BDT61B , BDT61C NPN , current VCE = 50 V IB = 0 BDT61B 0.5 V VCE = 60 V 0.2 Collector cut-off VCB = , IE = 0 TC = 150°C BDT61A 2.0 IE = 0 TC = 150°C BDT61B 2.0 VCB = 60 V VEC


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PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61
BDT618

Abstract: BDT60C ST BDT60C BOT61
Text: BDT61, BDT61A, BDT61B , BDT61C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , otherwise noted) RATING SYM BOL VALUE UNIT CoJlector-base voilage (lE = 0) 8DT61 BDT61A BDT61B BDT61C 0DT61 BDT61A BDT61B BDT61C VCEO VCBO 60 80 100 120 60 80 100 120 V EBO V CoHector-emitter , include testing of all parameters. INNOVATIONS P 3-31 BDT61, BDT61 A, BDT61B , BDT61C NPN , )CEO breakdown voftage !c = 30 mA i8 =0 (see Note 3) BDT61 BDT81A BDT61B BDT61C BDT61


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PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60B BDT60C O-220 8DT61 BDT61A BDT618 BDT60C ST BOT61
Not Available

Abstract: No abstract text available
Text: BDT61, BDT61A, BDT61B , BDT61C NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , noted) RATING BDT61 Collector-base voltage ( lE = 0) BDT61A BDT61B BDT61C BDT61 Collector-em itter voltage ( lB = 0) BDT61A BDT61B BDT61C Em itter-base voltage Continuous collector current Continuous base , , BDT61B , BDT61C NPN SILICON POWER DARLINGTONS AUG UST 1993 - REVISED MARCH 1997 electrical , = 0 (see Note 3) BDT61A BDT61B BDT61C V > 30 V 40 V 50 V 60 V 60 V 80 V 100 V 120 V


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PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C T0-220 BDT61
1993 - Not Available

Abstract: No abstract text available
Text: BDT61, BDT61A, BDT61B , BDT61C NPN SILICON POWER DARLINGTONS G Designed for Complementary Use , voltage (IE = 0) BDT61A BDT61B VALUE 60 V CBO 80 100 BDT61C V 120 BDT61 Collector-emitter voltage (IB = 0) UNIT 60 BDT61A BDT61B VCEO 80 100 V 120 BDT61C VEBO , , BDT61A, BDT61B , BDT61C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case , cut-off current VCE = 50 V IB = 0 BDT61B 0.5 breakdown voltage V VCE = 60 V IB = 0


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PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61
Not Available

Abstract: No abstract text available
Text: _ J v _ BDT61;61A BDT61B ;61C SILICON DARLINGTON POWER TRANSISTORS , 0034b75 fl?T August 1991 507 BDT61;61A BDT61B ;61C R1 typ. 6 kSl R2 typ. 1 0 0 « Fig. 2 , 0D34b7b 70b mA BDT61;61A BDT61B ;61C Silicon Darlington power transistors CHARACTERISTICS Tj , < 300 ps; S < 2%. ) ^^33^31 0D34b?7 b4S ( August 1988 509 BDT61;61A BDT61B ;61C , circuit. 510 Y March 1986 bbSBTBl 00341=76 SfiS i- BDT61;61A BDT61B ;61C Silicon


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PDF BDT61 BDT61B BDT60, BDT61 bbS3T31 0034bfll 7Z82097 QQ34bfl2
BDT61

Abstract: transistor BD 512 BDT60 BDT61B IEC134 1FC15
Text: BDT61;61A BDT61B ;61C A SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors , €¢0.6 -«-2_4 MSA0S0 - I ^August 1991507 ^53^31 0034b75 Ô7T BDT61.61A BDT61B ;61C RI typ. 6 kSÏ R2 typ , Darlington power transistors BDT61;61A BDT61B ;61C CHARACTERISTICS Tj = 25 °C unless otherwise , Manufacturer BDT61.61A BDT61B ;61C CHARACTERISTICS (continued) Diode, forward voltage IF = 1.5A vF < 2 V lF , Respective Manufacturer BDT61;61A BDT61B ;61C ■'CMmax -Iô = O.OII- 7 -1 'Cma


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PDF BDT61 BDT61B BDT60, T0-220. mount986 March-1986 bb53T31 GD34b03 transistor BD 512 BDT60 IEC134 1FC15
philips BDV64A

Abstract: BDX67
Text: 1.5A/6mA _ BDT61 BDT61A BDT61B BDT61C BDT60 BDT60A BDT60B BDT60C TO-220AB 4A


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PDF bb53T31 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD679 BD681 philips BDV64A BDX67
philips BDV64A

Abstract: T1P121 BDV66A PHILIPS SEMICONDUCTOR 200v 4A pnp bdv65a philips BDV65 PHILIPS SEMICONDUCTOR BU807 PHILIPS SEMICONDUCTOR B0646 philips TIP147 2a 100v NPN
Text: N AflER PHILIPS/DISCRETE ESE D ■^53131 DOlbEl? h H Power Devices 39 LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS (in order of current rating) TYPE PACKAGE OUTLINE 'C(DC)O) VCEO MINIMUM hps at Ig VCE(Mt) MAX. atices to«(typ-)at NPN PNP TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 TO-220AB 2A 60V 80V 100V 1000 at 1A and 500 at 2A 2.5V at 2A/8mA BD675 BD677 BD679 BD681 BD683 BD676 BD678 BD680 BD682 BD684 TO-126 4A 45V 60V 80V 100V 120 V 750 al 1.5A 2.5V at 1.5A/6mA BDT61 BDT61A BDT61B BDT61C


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PDF TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD675 BD677 BD679 philips BDV64A T1P121 BDV66A PHILIPS SEMICONDUCTOR 200v 4A pnp bdv65a philips BDV65 PHILIPS SEMICONDUCTOR BU807 PHILIPS SEMICONDUCTOR B0646 philips TIP147 2a 100v NPN
1993 - TCS-11

Abstract: BDT60 BDT60A BDT60B BDT60C BDT61 BDT61A BDT61B BDT61C
Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE


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PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60B TCS-11 BDT60 BDT60A BDT60B BDT60C BDT61 BDT61A BDT61C
T2D 22 diode

Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
Text: BDT60;60A BDT60B;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit fo r audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA BDT60 A B -VC BO max. 60 80 100 120 V ~ v CEO max. 60 80 100 120 V C Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (d.c.) - 'c


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PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. BDT60 T2D 22 diode T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
1993 - Not Available

Abstract: No abstract text available
Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) 1 C 2 E This series is currently available, but not recommended for new designs. B 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25Â


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PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60
1993 - Not Available

Abstract: No abstract text available
Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) 1 C 2 E This series is obsolete and not recommended for new designs. B 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature


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PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60
dg432

Abstract: No abstract text available
Text: BDT60;60A BDT60B;60C PHILIPS INTERNATIONAL SbE T > 711002b 00432G4 bTl HIPHIN T- 33- ? ( SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. Q U ICK R E F E R E N C E D A T A BDT60 Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (d.c.) Collector current (peak value) Total power


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PDF BDT60 BDT60B 711002b 00432G4 BDT61, BDT61A, BDT61B BDT61C. O-220. dg432
BDT60

Abstract: kia 494 BDT60B BDT61 BDT61A BDT61B BDT61C transistor 2TH transistor d 1991 ar
Text: BDT60;60A BDT60B;60C SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA BDT60 a b C Collector-base voltage (open emitter) -vcbo max. 60 80 100 120 v Collector-emitter voltage (open base) ~vCEO max. 60 80 100 120 v Collector current (d.c.) -


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PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. O-220. 0D34bb7 kia 494 BDT61 BDT61A BDT61C transistor 2TH transistor d 1991 ar
3DT60

Abstract: BDT61 BDT60 BDT60A BDT60B BDT60C BDT61B BDT61C BDV64
Text: THAN SYS ELECTRONICS ^^ LIMITED T0-220 PACKAGE • Designed for Complementary Use with BDT61, BDT61 A, BDT61B and BDT61C B C • 50 W at 25°C Case Temperature ^ • 4 A Continuous Collector Current E c • Minimum hFE of 750 at 1.5 V, 3 A Pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25°C case temperature (unless otherwise noted) BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS RATING SYMBOL VALUE UNIT Collector-base voltage (lE = 0) BDT60 BDT60A


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PDF T0-220 BDT61, BDT61 BDT61B BDT61C BDT60, BDT60A, BDT60B, BDT60C BDT60 3DT60 BDT60A BDT60B BDT60C BDT61C BDV64
1993 - BDT60C

Abstract: BDT60 BDT60A BDT60B BDT61 BDT61A BDT61B BDT61C
Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE


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PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60B BDT60C BDT60 BDT60A BDT60B BDT61 BDT61A BDT61C
LC1 DT60

Abstract: BDT60 BDT60B BDT61 BDT61A BDT61B BDT61C IEC134 z825
Text: BDT60;60A BDT60B;60C PHILIPS INTERNATIONAL SbE D ■TiioflEb 00143204 tu «PHIN T- 33- ?( SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. N-P-N complements are BDT61, BDT61A, BDT61B and BDT61C. QUICK REFERENCE DATA BDT60 A B C Collector-base voltage (open emitter) ~vCBO max. 60 80 100 120 V Collector-emitter voltage (open base) -vCEO max. 60 80 100 120 V Collector current


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PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. LC1 DT60 BDT61 BDT61A BDT61C IEC134 z825
BDT60C ST

Abstract: BDT60C
Text: BDTBO, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARUNGTONS Copyright® 1997, Powet Innovations Limited, UK_ A U G U S T 1993 - R E V IS E D M A R C H 1997 · · · · Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum of 750 at 1.5 V, 3 A B C T0-220 P A C KA G E (TOP VIEW) cc Pin 2 is fn electrical contact wfth the mounting base. MDTRACA a b so lu te m axim um ra tin gs at 25°C c a se


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PDF BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C T0-220 BDT60 BDT60A BDT60C ST
1993 - BDT60

Abstract: BDT60C BDT60A BDT60B BDT61 BDT61A BDT61B BDT61C
Text: BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK q AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C TO-220 PACKAGE (TOP VIEW) q 50 W at 25°C Case Temperature q 4 A Continuous Collector Current B 1 q Minimum hFE of 750 at 1.5 V, 3 A C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case


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PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60 BDT60 BDT60C BDT60A BDT60B BDT61 BDT61A BDT61C
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