The Datasheet Archive

BDT60 datasheet (75)

Part Manufacturer Description Type PDF
BDT60 Bourns PNP SILICON POWER DARLINGTONS Original PDF
BDT60 Philips Semiconductors Silicon Darlington Power Transistor Original PDF
BDT60 Power Innovations PNP SILICON POWER DARLINGTON Original PDF
BDT60 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
BDT60 Others Shortform Transistor PDF Datasheet Scan PDF
BDT60 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BDT60 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BDT60 Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
BDT60 Transys Electronics PNP SILICON POWER DARLINGTONS Scan PDF
BDT60 Transys Electronics BJT, PNP, Darlington Power Transistor, IC 4A Scan PDF
BDT601000 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan PDF
BDT601000C Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan PDF
BDT601200 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan PDF
BDT601200C Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan PDF
BDT60200 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan PDF
BDT60200C Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan PDF
BDT60400 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan PDF
BDT60400C Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan PDF
BDT60600 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan PDF
BDT60600C Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan PDF

BDT60 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1993 - BDT60

Abstract: BDT60C BDT60A BDT60B BDT61 BDT61A BDT61B BDT61C
Text: BDT60 , BDT60A , BDT60B , BDT60C PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , µs 4.5 µs BDT60 , BDT60A , BDT60B , BDT60C PNP SILICON POWER DARLINGTONS AUGUST 1993 - , . PRODUCT INFORMATION 3 BDT60 , BDT60A , BDT60B , BDT60C PNP SILICON POWER DARLINGTONS AUGUST 1993 , IC - Collector Current - A -10 SAS115AB -1·0 -0·1 BDT60 BDT60A BDT60B BDT60C -0.01 , . PRODUCT 4 INFORMATION 125 150 BDT60 , BDT60A , BDT60B , BDT60C PNP SILICON POWER DARLINGTONS


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PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60 BDT60 BDT60C BDT60A BDT60B BDT61 BDT61A BDT61C
1993 - BDT60C

Abstract: BDT60 BDT60A BDT60B BDT61 BDT61A BDT61B BDT61C
Text: BDT60 , BDT60A , BDT60B , BDT60C PNP SILICON POWER DARLINGTONS Designed for Complementary Use , 2002 Specifications are subject to change without notice. 3 BDT60 , BDT60A , BDT60B , BDT60C PNP , IC - Collector Current - A -10 SAS115AB -1·0 -0·1 BDT60 BDT60A BDT60B BDT60C -0.01 , Specifications are subject to change without notice. BDT60 , BDT60A , BDT60B , BDT60C PNP SILICON POWER , = 0) BDT60B V CBO -80 -100 BDT60C V -120 BDT60 Collector-emitter voltage (IB


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PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60B BDT60C BDT60 BDT60A BDT60B BDT61 BDT61A BDT61C
1993 - TCS-11

Abstract: BDT60 BDT60A BDT60B BDT60C BDT61 BDT61A BDT61B BDT61C
Text: BDT60 , BDT60A , BDT60B , BDT60C PNP SILICON POWER DARLINGTONS Designed for Complementary Use , 2002 Specifications are subject to change without notice. 3 BDT60 , BDT60A , BDT60B , BDT60C PNP , IC - Collector Current - A -10 SAS115AB -1·0 -0·1 BDT60 BDT60A BDT60B BDT60C -0.01 , = 0) BDT60B V CBO -80 -100 BDT60C V -120 BDT60 Collector-emitter voltage (IB = 0) UNIT -60 BDT60 BDT60A VALUE -60 BDT60A BDT60B VCEO -80 -100 V


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PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60B TCS-11 BDT60 BDT60A BDT60B BDT60C BDT61 BDT61A BDT61C
Not Available

Abstract: No abstract text available
Text: BDT60 , BDT60A , BDT60B , BDT60C PNP SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power , noted) RATING BDT60 Collector-base voltage ( lE = 0) BDT60A BDT60B BDT60C BDT60 Collector-em itter , processing does not necessarily include testing of all parameters. BDT60 , BDT60A , BDT60B , BDT60C PNP , -80 V lB = 0 CD BDT60 BDT60A BDT60B BDT60C BDT60 BDT60A BDT60B BDT60C T c = 150°C T c = 150°C T c = 150°C T c = 150°C BDT60 BDT60A BDT60B BDT60C -0.5 -0.5 -0.5 -0.5 -0.2 -0.2 -0.2 -0.2 -2.0


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PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C BDT60 BDT60A
LC1 DT60

Abstract: BDT60 BDT60B BDT61 BDT61A BDT61B BDT61C IEC134 z825
Text:  BDT60 ;60A BDT60B ;60C PHILIPS INTERNATIONAL SbE D ■TiioflEb 00143204 tu «PHIN T- 33- ? , MSAoeo-i August 1991 491 This Material Copyrighted By Its Respective Manufacturer BDT60 ;60A BDT60B , unless otherwise specified. BDT60 ;60A BDT60B ;60C SbE D Collector cut-off current lE = 0; -VCB = , power transistors 1^33-31 BDT60 ;60A BDT60B ;60C PHILIPS INTERNATIONAL 10 -'c (A) 10 -1 10 -2 , transistors 1^33-31 BDT60 ;60A BDT60B ;60C PHILIPS INTERNATIONAL SbE D ■7110â2b 004321G =JT5 100


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PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. LC1 DT60 BDT61 BDT61A BDT61C IEC134 z825
1993 - Not Available

Abstract: No abstract text available
Text: BDT60 , BDT60A , BDT60B , BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary , ) BDT60A BDT60B VALUE -60 V CBO -80 -100 BDT60C -60 BDT60A BDT60B V CEO BDT60C , REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDT60 , BDT60A , BDT60B , 150°C BDT60 -2.0 IE = 0 TC = 150°C BDT60A -2.0 IE = 0 TC = 150°C BDT60B , REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDT60 , BDT60A , BDT60B


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PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60
1993 - Not Available

Abstract: No abstract text available
Text: BDT60 , BDT60A , BDT60B , BDT60C PNP SILICON POWER DARLINGTONS ● Designed for Complementary , BDT60 , BDT60A , BDT60B , BDT60C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case , Specifications are subject to change without notice. BDT60 , BDT60A , BDT60B , BDT60C PNP SILICON POWER , -80 -100 BDT60C -60 BDT60A BDT60B V CEO BDT60C Emitter-base voltage V -120 , REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDT60 , BDT60A , BDT60B


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PDF BDT60, BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C O-220 BDT60
T2D 22 diode

Abstract: T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
Text: BDT60 ;60A BDT60B ;60C y v SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power , August 1991 493 BDT60 ;60A BDT60B :60C y v . Fig. 3 Switching times waveforms. vcc â , transistors y v BDT60 ;60A BDT60B ;60C Fig. 5 Safe Operating Area, T m(j = 25 °C. I II Region o , 495 BDT60 ;60A BDT60B ;60C IQ " 5 1 0 -4 10~3 Fig. 7 Second-breakdown current , level. 10~2 BDT60 ;60A BDT60B ;60C Silicon Darlington power transistors y v 0 50 100


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PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. BDT60 T2D 22 diode T2D 56 DIODE T2D DIODE diode t2d 05 T2D 70 diode
BDT60

Abstract: kia 494 BDT60B BDT61 BDT61A BDT61B BDT61C transistor 2TH transistor d 1991 ar
Text:  BDT60 ;60A BDT60B ;60C SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in , ^31 0034bbG ■BDT60 ;60A BDT60B ;60C I- I ——|—c b 1 k : 1 -1 k : R1 typ. 6 , BDT60 ;60A BDT60B ;60C CHARACTERISTICS Tj - 25 °C unless otherwise specified. Collector cut-off , 0G34bb3 OSfl ■Silicon Darlington power transistore BDT60 ;60A BDT60B ;60C Fig. 5 Safe Operating Area , Copyrighted By Its Respective Manufacturer ■bb53 BDT60 ;60A BDT60B ;60C 10= M


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PDF BDT60 BDT60B BDT61, BDT61A, BDT61B BDT61C. O-220. 0D34bb7 kia 494 BDT61 BDT61A BDT61C transistor 2TH transistor d 1991 ar
3DT60

Abstract: BDT61 BDT60 BDT60A BDT60B BDT60C BDT61B BDT61C BDV64
Text: . absolute maximum ratings at 25°C case temperature (unless otherwise noted) BDT60 , BDT60A , BDT60B , BDT60C , BDT60B BDT60C VCBO -60 -80 -100 -120 V Collector-emitter voltage (lB = 0) BDT60 BDT60A BDT60B BDT60C , the rate of 16 mW/°C. BDT60 , BDT60A , BDT60B , BDT60C PNP SILICON POWER DARLINGTONS electrical , ) BDT60A BDT60B BDT60C -80 -100 -120 V vCE = -30 V lB = 0 BDT60 -0.5 'ceo Collector-emitter , °C Tq = 150°C BDT60C BDT60 BDT60A BDT60B BDT60C -0.2 -2.0 -2.0 -2.0 -2.0 mA 'ebo Emitter cut-off


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PDF T0-220 BDT61, BDT61 BDT61B BDT61C BDT60, BDT60A, BDT60B, BDT60C BDT60 3DT60 BDT60A BDT60B BDT60C BDT61C BDV64
dg432

Abstract: No abstract text available
Text: BDT60 ;60A BDT60B ;60C PHILIPS INTERNATIONAL SbE T > 711002b 00432G4 bTl HIPHIN T- 33- ? , not tinned r " 2.54 2.54 -2 .4 MSA060-1 "V August 1991 491 BDT60 ;60A BDT60B , INTERNATIONAL CH AR ACT ER ISTICS Tj = 25 °C unless otherwise specified. SbE D BDT60 ;60A BDT60B :60C , jus; 8 < 2%. "V August-1991 493 BDT60 ;60A BDT60B :60C J 5bE D 711Dfl2b DDM32Q7 30D , . \ r 494 March 1986 Silicon Darlington power transistors BDT60 ;60A BDT60B ;60C 5bE » 711DflSb


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PDF BDT60 BDT60B 711002b 00432G4 BDT61, BDT61A, BDT61B BDT61C. O-220. dg432
BDT60C ST

Abstract: BDT60C
Text: I ONS 3-27 BDT60 , BDT60A , BDT60B , BDT60C PNP SILICON POWER DARLINGTONS A U G U S T 1993 - R E , 0 lB = 0 O O Il II B O T 6O BDT60A BDT60B B D T6Ö C BDT60 BDT60A BDT60B BDT60C Tc = 150°C Tc s 1 5 0 , . 3-28 BDT60 , BDT60A , BDT60B , BDT60C PNP SILICON POWER DARLINGTONS AU G U ST 1983 - R E V IS E D M A , NNOVATI ONS P 3-2 9 BDT60 , BDT60A , BDT60B , BDT60C FNP SILICON POWER DARLINGTONS A U G U ST 1993 - , BDTBO, BDT60A , BDT60B , BDT60C PNP SILICON POWER DARUNGTONS Copyright® 1997, Powet Innovations


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PDF BDT60A, BDT60B, BDT60C BDT61, BDT61A, BDT61B BDT61C T0-220 BDT60 BDT60A BDT60C ST
philips BDV64A

Abstract: BDX67
Text: 1.5A/6mA _ BDT61 BDT61A BDT61B BDT61C BDT60 BDT60A BDT60B BDT60C TO-220AB 4A


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PDF bb53T31 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD679 BD681 philips BDV64A BDX67
philips BDV64A

Abstract: T1P121 BDV66A PHILIPS SEMICONDUCTOR 200v 4A pnp bdv65a philips BDV65 PHILIPS SEMICONDUCTOR BU807 PHILIPS SEMICONDUCTOR B0646 philips TIP147 2a 100v NPN
Text: BDT60 BDT60A BDT60B BDT60C TO-220AB 4A 60V 80V 100V 120V 750 at 1.5A 2.5V at 1.5A/6mA PNP = 1.5/JS NPN =


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PDF TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD675 BD677 BD679 philips BDV64A T1P121 BDV66A PHILIPS SEMICONDUCTOR 200v 4A pnp bdv65a philips BDV65 PHILIPS SEMICONDUCTOR BU807 PHILIPS SEMICONDUCTOR B0646 philips TIP147 2a 100v NPN
1993 - BDT60C

Abstract: BDT61A BDT60 BDT60A BDT60B BDT61 BDT61B BDT61C
Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BDT60 , BDT60A , BDT60B and BDT60C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE


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PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61B BDT60C BDT61A BDT60 BDT60A BDT61 BDT61B BDT61C
BDT618

Abstract: BDT60C ST BDT60C BOT61
Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK_ AUG UST 1993 - REVISED M ARCH 1997 · · · · Designed for Complementary Use with BDT60 , BOT6OA, BDT60B and BDT60C 50 W at 2S°C Case Temperature 4 A Continuous Collector Current Minimum hre of 7S0 at 1.5 V, 3 A TO-220 P A C K A G E (TOP VIEW) Pin 2 is In electrical contact wilt) the mounting base. M D T RACA absolute maximum ratings at 25°C case temperature (unless


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PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60B BDT60C O-220 8DT61 BDT61A BDT618 BDT60C ST BOT61
1993 - Not Available

Abstract: No abstract text available
Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60 , BDT60A , BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) 1 C 2 E This series is obsolete and not recommended for new designs. B 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature


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PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61
1993 - Not Available

Abstract: No abstract text available
Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60 , BDT60A , BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) 1 C 2 E This series is currently available, but not recommended for new designs. B 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25Â


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PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61
1993 - Not Available

Abstract: No abstract text available
Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS G Designed for Complementary Use with BDT60 , BDT60A , BDT60B and BDT60C G 50 W at 25°C Case Temperature G 4 A Continuous Collector Current G Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDT61 Collector-base


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PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61
1993 - BDT61

Abstract: BDT60C BDT61C BDT60 BDT60A BDT60B BDT61A BDT61B
Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BDT60 , BDT60A , BDT60B and BDT60C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at 1.5 V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE


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PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61B BDT61 BDT60C BDT61C BDT60 BDT60A BDT61A BDT61B
BDT61

Abstract: dg43550 BDT60 BDT61B QGM3221 diagram DARLINGTON
Text: BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE D I SILICON DARLINGTON POWER TRANSISTORS 711002b DG43550 ômVWphiN N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. P-N-P complements are BDT60 , 60A, 60B and 60C. QUICK REFERENCE DATA BDT61 A B C Collector-base voltage (open emitter) vCBO max. 60 80 100 120 V Collector-emitter voltage (open base) vCEO max. 60 80 100 120 V Collector current (d.c.) ■c max. 4 A


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PDF BDT61 BDT61B 711002b DG43550 BDT60, 711005b 7Z82099 dg43550 BDT60 QGM3221 diagram DARLINGTON
5BE1

Abstract: bdt61 Darlington NPN Silicon Diode
Text: BDT61;61A BDT61B;61C PHILIPS INTERNATIONAL SbE ] > I 711002(3 0 0 4 3 5 5 0 Ö44 » P H I N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. P-N-P complements are BDT60 , 60A, 60B and 60C. QUICK REFERENCE DATA BDT61 Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (d.c.) Collector current (peak value) Total power dissipation up to


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PDF BDT61 BDT61B BDT60, O-220. 7110fl2b G04B527 B2097 5BE1 Darlington NPN Silicon Diode
Not Available

Abstract: No abstract text available
Text: _ J v _ BDT61;61A BDT61B;61C SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. P-N-P complements are BDT60 , 60A, 60B and 60C. QUICK REFERENCE DATA BDT61 Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current (d.c.) A B VCBO max. 60 80 100 120 V C V CE0 max. 60 80 100


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PDF BDT61 BDT61B BDT60, BDT61 bbS3T31 0034bfll 7Z82097 QQ34bfl2
1993 - sas110

Abstract: BDT61C BDT61B BDT61A BDT61 BDT60C BDT60B BDT60A BDT60 750-AT-1
Text: BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK q AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BDT60 , BDT60A , BDT60B and BDT60C TO-220 PACKAGE (TOP VIEW) q 50 W at 25°C Case Temperature q 4 A Continuous Collector Current B 1 q Minimum hFE of 750 at 1.5 V, 3 A C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case


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PDF BDT61, BDT61A, BDT61B, BDT61C BDT60, BDT60A, BDT60B BDT60C O-220 BDT61 sas110 BDT61C BDT61B BDT61A BDT61 BDT60C BDT60A BDT60 750-AT-1
BDT61

Abstract: transistor BD 512 BDT60 BDT61B IEC134 1FC15
Text: BDT61;61A BDT61B;61C A SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications. P-N-P complements are BDT60 , 60A, 60B and 60C. QUICK REFERENCE DATA BDT61 A B C Collector-base voltage (open emitter) VCBO max. 60 80 100 120 V Collector-emitter voltage (open base) VCE0 max. 60 80 100 120 V Collector current (d.c.) ic max. 4 A Collector current (peak value) ■cm max. 6 A


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PDF BDT61 BDT61B BDT60, T0-220. mount986 March-1986 bb53T31 GD34b03 transistor BD 512 BDT60 IEC134 1FC15
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