The Datasheet Archive

BD899A datasheet (14)

Part Manufacturer Description Type PDF
BD899A Bourns NPN SILICON POWER DARLINGTONS Original PDF
BD899A Power Innovations NPN SILICON POWER DARLINGTONS Original PDF
BD899A General Electric 8 A N-P-N darlington power transistor. 80 V. 70 W. Scan PDF
BD899A Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
BD899A Motorola European Master Selection Guide 1986 Scan PDF
BD899A Others Cross Reference Datasheet Scan PDF
BD899A Others Diode, Transistor, Thyristor Datasheets and more Scan PDF
BD899A Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BD899A Others Shortform Transistor Datasheet Guide Scan PDF
BD899A Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BD899A National Semiconductor Shortform National Semiconductor Datasheet Scan PDF
BD899A National Semiconductor PRO ELECTRON SERIES - JFET Scan PDF
BD899A Texas Instruments 80 V, 8 A, 70 W, NPN silicon power darlington Scan PDF
BD899A-S Bourns NPN DARLINGTON 80V 8A Original PDF

BD899A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
C03GE

Abstract: BD901 BD597 BD899 BD897A BD897 BD896 BD899A BD895A I/BD899
Text: "2.°! _;_uanington Power Transistors File Number 1240 BD895, BD895A, BD897, BD897A, BD899, BD899A , (BD895A, BD897A, BD899A ) Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features: Applications: â , VIEW IUi-S»ll JEDEC TO-220AB The RCA-BD895, BD895A, BD897, BD897A, BD899, BD899A , and BD901 are , ) from casa for 10 s max. BD897 BD8S7A 60 60 BD899 BD899A 80 80 , , BD899, BD899A , BD901 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc = 25°C Unless Otherwise


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PDF 0Q17577 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 45-60-80-100-Volts, C03GE BD901 BD597 BD899 BD897A BD897 BD896 BD899A BD895A I/BD899
1993 - Not Available

Abstract: No abstract text available
Text: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with , otherwise noted) RATING SYMBOL BD897A V CBO V CEO 60 V 80 BD899A Emitter-base voltage V 45 BD895A BD897A 60 80 BD899A Collector-emitter voltage (IB = 0) UNIT 45 , change without notice. 1 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS electrical , BD899A IC = 100 mA TYP 80 V VCE(sat) VBE(on) VEC 0.5 BD897A 0.5 VCE = 40 V


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PDF BD895A, BD897A, BD899A BD896A, BD898A BD900A O-220 BD897A BD895A
1993 - BD895A

Abstract: BD896A BD897A BD898A BD899A BD900A
Text: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Designed for Complementary Use with , (unless otherwise noted) RATING SYMBOL BD897A V CBO BD895A BD897A 60 V 80 BD899A , BD899A 60 V 80 VEBO 5 Continuous collector current IC 8 A Continuous base , notice. 1 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS electrical characteristics at 25 , TEST CONDITIONS MIN BD895A IB = 0 BD897A (see Note 3) MAX 60 BD899A IC = 100


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PDF BD895A, BD897A, BD899A BD896A, BD898A BD900A O-220 BD897A BD895A BD895A BD896A BD897A BD899A BD900A
Not Available

Abstract: No abstract text available
Text: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power Innovations , BD895A Collector-base voltage ( lE = 0) BD897A BD899A BD895A Collector-em itter voltage ( lB = 0) BD897A BD899A Em itter-base voltage Continuous collector current Continuous base current Continuous device , not necessarily include testing of all parameters. BD895A, BD897A, BD899A NPN SILICON POWER , (see Note 3) BD897A BD899A CD MIN 45 60 80 TYP MAX UNIT breakdown voltage V


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PDF BD895A, BD897A, BD899A BD896A, BD898A BD900A BD895A BD897A
1993 - BD895A

Abstract: BD896A BD897A BD898A BD899A BD900A
Text: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited , 60 V 80 BD895A BD897A UNIT 45 BD899A Collector-emitter voltage (IB = 0) VALUE 45 VCEO BD899A 60 V 80 V EBO 5 V Continuous collector current IC 8 A , include testing of all parameters. 1 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS AUGUST , BD895A IB = 0 (see Note 3) BD897A MAX 60 BD899A IC = 100 mA TYP 80 V


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PDF BD895A, BD897A, BD899A BD896A, BD898A BD900A O-220 BD895A BD897A BD895A BD896A BD897A BD899A BD900A
1993 - Not Available

Abstract: No abstract text available
Text: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with , noted) RATING SYMBOL BD897A V CBO E T E L O S B O BD899A BD895A Collector-emitter voltage (IB = 0) BD897A V CEO BD899A Emitter-base voltage UNIT 45 BD895A , Specifications are subject to change without notice. 1 BD895A, BD897A, BD899A NPN SILICON POWER , (see Note 3) MAX 60 BD899A IC = 100 mA TYP 80 V V CE(sat) VBE(on) VEC 0.5


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PDF BD895A, BD897A, BD899A BD896A, BD898A BD900A O-220 BD897A BD895A
BD901

Abstract: BD897 case BD901 BD899A BD899 BD897A BD895A BD895 1N914 D03bt
Text: BD895, BD895A,BD897, BD897A, BD899, BD899A , BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1984 , BD899A BD901 Collector-base voltage 45 V 60 V 80 V 100V Collector-emitter voltage {I3 = 0) 45 V 60 V 80 , BD895, BD895A, BD897, BD897A, BD899, BD899A , BD901 N-P-N SILICON POWER DARLINGTONS 62c 3&600 , ) PARAMETER TEST CONDITIONS BD899, BD899A BD901 UNIT MIN TYP MAX MIN TYP MAX V|BRICEO ic = 100 mA, ìb , and 4 BD 899, BD901 750 750 VCE = 3 V, lC = 4 A, See Notes 3 and 4 BD899A 750 VßE(on) VCE = 3V


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PDF BD895, BD895A BD897, BD897A, BD899, BD899A, BD901 T-33-29 TQ-220AB BD895 BD897 case BD901 BD899A BD899 BD897A 1N914 D03bt
1993 - BD895A

Abstract: BD896A BD897A BD898A BD899A BD900A
Text: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Designed for Complementary Use with , (unless otherwise noted) RATING SYMBOL BD897A V CBO BD895A BD897A 60 V 80 BD899A , BD899A 60 V 80 VEBO 5 Continuous collector current IC 8 A Continuous base , notice. 1 BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS electrical characteristics at 25 , TEST CONDITIONS MIN BD895A IB = 0 BD897A (see Note 3) MAX 60 BD899A IC = 100


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PDF BD895A, BD897A, BD899A BD896A, BD898A BD900A O-220 BD897A BD895A BD895A BD896A BD897A BD899A BD900A
BD901

Abstract: case BD901 BD899 BD645
Text: BD895, BD895A, BD897, BD897A, BD899, BD899A , BD901 HARR IS SENICON]) S E CT OR SbE D File , A (BD895A, BD897A, BD899A ) Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features: Applications , BD89S, BD645, BD895A, BDS97, BD897A, BD899, BD899A , and BD901 are m onolithic silicon n-p-n Darling ton , . BD897 BD897A 60 60 - 5 BD899 BD899A 80 80 BD901 - 100 100 V V V A A W W/°C ·C VCEO(sus , . BD895A, BD897, BD897A, BD899, BD899A , BD901 HARRIS SEIUCOND SECTOR SbE ]> 4302271 004 0bflb 177 H H A S


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PDF BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 45-60-80-100-Volts, BD901 case BD901 BD899 BD645
case BD901

Abstract: BD901 BD895 BD899
Text: BD895, BD895A, BD897, BD897A, BD899, BD899A , BD901 File Number 1240 8-Ampere N-P-N , (BD895A, BD897A, BD899A ) Gain of 750 at 3 A (BD895, BD897, BD899, BD901) Features: Applications: 9 2 C S , , BD899A , and BD901 are m onolithic silicon n-p-n Darling ton transistors designed fo r low and m edium , VEBO. 45 45 BD897 BD897A 60 60 - 5 . 8 0.1 BD899 BD899A 80 80 BD901 - 100 100 'c , 150 - 235 °C 2-263 BD895, BD895A, BD897, BD897A, BD899, BD899A , BD901 E L E C T R IC A


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PDF BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 45-60-80-100-Volts, case BD901 BD901 BD895 BD899
Not Available

Abstract: No abstract text available
Text: BD895A, BD897A, BD899A NPN SILICON POWER DARLINGTONS Copyright C 1997, Power Innovations limited , Collector-base voltage (!g = 0} BD895A BD897A BD899A SYMBOL VALUE 45 60 SO 45 60 60 5 8 0.3 70 2 -65 to , linearly to 150°C {ree air temperature at thè rate of 16 mW/°C. Pw Ptoi Ta Ti ^slg BDS97A BD899A VE80 h V , , BD899A NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 e le c tric a l c h a ra c te , CONDITIONS BD895A »8=0 !a = 0 la =0 la = 0 !e = MIN 45 60 80 BD897A BD899A BD395A BD897A 8DB99A B0895A


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PDF BD895A, BD897A, BD899A BD896A, B0898A O-220 BD895A BD897A BD899A
BD897A

Abstract: BD895A BD899A
Text: Collector-base voltage BD897A VALUE 45 Open emitter 60 BD899A Collector-emitter voltage 45 BD897A Open base BD899A VEBO Emitter-base voltage IC Base current PT 60 V 80 , TYP. MAX UNIT 45 IC=100mA, IB=0 V 60 80 BD899A VCEsat MIN V Base-emitter , VCE=30V, IB=0 BD899A ICEO 2.8 BD899A ICBO IC=4A ,IB=16mA BD895A VBE


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PDF BD895A/897A/899A O-220C BD896A/898A/900A BD895A BD897A BD899A BD897A BD895A BD899A
BD895A

Abstract: BD897A BD899A
Text: V 80 Base current PT 60 80 Collector current-DC IB UNIT 45 BD899A BD899A VEBO VALUE Open collector 5 V 8 A 300 mA Total power dissipation TC , =0 BD899A VCEsat MIN V 60 80 2.8 V IC=4A ; VCE=3V 2.5 V BD895A VCB=45V, IE=0 TC=100 0.2 2.0 BD897A VCB=60V, IE=0 TC=100 0.2 2.0 BD899A VCB=80V, IE=0 TC=100 0.2 2.0 BD895A VCE=30V, IB=0 BD897A VCE=30V, IB=0 BD899A VCE=40V, IB=0 Collector


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PDF BD895A/897A/899A O-220C BD896A/898A/900A BD895A BD897A BD895A BD897A BD899A
D895

Abstract: BD 895 bdw 34 a
Text: > 62C 3 6 5 9 9 BD895, BD895A,BD897, BD897A, BD899, BD899A , BD901 N-P-N SILICON POWER DARLINGTONS , BD899 BD899A 80 V 80 V BD901 100V 100V Collector-emitter voltage (Ib = 0 ) Emitter-base voltage , , BD895A, BD897, BD897A, BD899, BD899A , BD901 N-P-N SILICON POWER DARLINGTONS electrical characteristics , , BD895A, BD897, BD897A, BD899, BD899A , BD901 N-P-N SILICON POWER DARUNGTONS thermal characteristics , , BD897A, BD899, BD899A , BD901 N-P-N SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS S TA TIC FORW ARD


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PDF BD895, BD895A BD897, BD897A, BD899, BD899A, BD901 T-33-29 -220AB BD895 D895 BD 895 bdw 34 a
D895

Abstract: transistor Bd 699 transistor BD901 BD695A BD895 BD897A D-897 bd897 motorola
Text: MOTORCLA sc XSTRS/R F lE E D I b3b?254 GGfl47bS T | MOTOROLA TECHNICAL DATA SEMICONDUCTOR BD895, BD895A BD897, BD897A BD899, BD899A BD901 DARLINGTON 8 AMPERE NPN SILICON POWER TRANSISTORS 45-60-80-100 V O L T S 70 W ATTS PLASTIC POWER SILICON NPN DARLINGTONS . for use as output , , 699A, 701. M A X IM U M R A TIN G S BD895 BD899 Symbol BD895A BD897 BD899A BD897A V C EO VC B veb , GüaM7bb 1 | BD895, BD895A, BD897, BD897A, BD899, BD899A , BD901 T-33-29 E L E C T R IC A L C H A R A


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PDF GGfl47bS BD895, BD895A BD897, BD897A BD899, BD899A BD901 BD896, D895 transistor Bd 699 transistor BD901 BD695A BD895 D-897 bd897 motorola
Not Available

Abstract: No abstract text available
Text: BD899A Transistors NPN Darlington Transistor Military/High-RelN V(BR)CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)70 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)200uÌ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750 h(FE) Max. Current gain. @I(C) (A) (Test Condition)4.0 @V(CE) (V) (Test Condition)3.0 f(T) Min. (Hz) Transition Freq1.0M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test


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PDF BD899A
BDX53D

Abstract: D45VH4 D44H5 BD900 BUS36 bdw41 BD807 D44H8 BD901 2N6041
Text: 1 Baza/Base 2 Kolektor/Collector 3 Emitor/Emitter J0,7maks 5,2mgks Sl./Fig. 60 Silicijevi transistorji 0,5 A do 15 A Silicon transistors 0.5 A to 15 A Tip/Type Uceo lo Ptoi hfE pri/at le fi Si./ NPN PNP (V) . (A) ' m min/maks (A) (MHz) Fig. 2N6044 2N6041 80 •:'•- 8 •• 75 1k/l0k 4 4 TIP101 TIP106 ¿v ■80 1k/20k 3 4 BDX53B BDX54B . 60 750 min 3 TIP131 TIP136 -• :.: 70 1k/15k 4 BD899 BD900 - i - " ^ . - i - 70 750 min 3 BD899A BD900A • ., '. -'- "70 750 min 4


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PDF 2N6044 2N6041 TIP101 TIP106 1k/20k BDX53B BDX54B TIP131 TIP136 1k/15k BDX53D D45VH4 D44H5 BD900 BUS36 bdw41 BD807 D44H8 BD901
BOX53C

Abstract: box54c BOX33C box53b transistor box54c box53a box54 box34c box53 b0808
Text: min 3 70 BD899A BD900A 750 min 4 70 100 BDX53C BDX54C 750 min 3 60 TIP132 TIP137


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PDF O-220AB 2N6386 k/20k BDX53 BDX54 BD895 BD896 BD895A BD896A BDX53A BOX53C box54c BOX33C box53b transistor box54c box53a box54 box34c box53 b0808
1993 - BD895A

Abstract: BD896A BD897A BD898A BD899A BD900A
Text: BD896A, BD898A, BD900A PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BD895A, BD897A and BD899A 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD898A V CBO BD896A BD898A -60 V -80 BD900A


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PDF BD896A, BD898A, BD900A BD895A, BD897A BD899A O-220 BD898A BD896A BD895A BD896A BD898A BD899A BD900A
r3673

Abstract: Y1031 TIC106D Thyristor r3673 Philippines R3672 TIP43 BD657 transistor bf65 BF65-S transistor bf64
Text: BD744C BD744C-S BD897A BD897A-S BD898 BD898-S BD899 BD899A BD899A-S BD899-S BD900 BD900-S


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PDF O-220 BLBF39 MP150SG, KTMC-1030NAP, thyrisTIP42C-S TIP42-S TIP43 TIP43-S r3673 Y1031 TIC106D Thyristor r3673 Philippines R3672 TIP43 BD657 transistor bf65 BF65-S transistor bf64
BDX334

Abstract: bdy37a BD649 BD795 BD796 bu208 BD798 BD799 BD800 BDY56
Text: 3.00 3 3 3 3 1 1 1 1 T0220 T0220 T0220 T0220 BD899A BD901 BDX10 BDX13 NPN NPN NPN NPN 70.0 70.0 117


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PDF DB5a35M 0QDD053 BD645 BD647 BD649 BD795 T0220 T0220 BDX334 bdy37a BD796 bu208 BD798 BD799 BD800 BDY56
r3673

Abstract: Y1031 mp150s R3672 r3673 Philippines TIC106D Thyristor TIC226D Philippines TIP43 transistor bf64 bd657
Text: BD898-S BD899 BD899A BD899A-S BD899-S BD900 BD900-S BD901 BD901-S BD902 BD902-S BD903


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PDF O-220 BLBF39 MP150SG, KTMC-1030NAP, thyrisTIP42C-S TIP42-S TIP43 TIP43-S r3673 Y1031 mp150s R3672 r3673 Philippines TIC106D Thyristor TIC226D Philippines TIP43 transistor bf64 bd657
2009 - TIC106M SCR

Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 BTB06-600 TIP36C EQUIVALENT TIC116D equivalent TIC126D equivalent
Text: BD899 BD899A BD900 BD900A BD901 BD902 BD909 BD910 BD911 BD912 BDW73 BDW73A BDW73B BDW73C , TIP36C TIP36C BD544A BD544B BD895 BD895A BD896 BD896A BD897 BD897A BD898 BD898A BD899 BD899A


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PDF O-220, OT-93 2M/TSP0904 TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 BTB06-600 TIP36C EQUIVALENT TIC116D equivalent TIC126D equivalent
1993 - BD895A

Abstract: BD896A BD897A BD898A BD899A BD900A
Text: BD896A, BD898A, BD900A PNP SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK q AUGUST 1993 - REVISED MARCH 1997 Designed for Complementary Use with BD895A, BD897A and BD899A TO-220 PACKAGE (TOP VIEW) q 70 W at 25°C Case Temperature q 8 A Continuous Collector Current B 1 q Minimum hFE of 750 at 3V, 3A C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature


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PDF BD896A, BD898A, BD900A BD895A, BD897A BD899A O-220 BD896A BD898A BD895A BD896A BD898A BD899A BD900A
2008 - TIC106D equivalent

Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
Text: BD899 BD899A BD900 BD900A BD901 BD902 BD909 BD910 BD911 BD912 BDW73 BDW73A BDW73B BDW73C , TIP36C TIP36C BD544A BD544B BD895 BD895A BD896 BD896A BD897 BD897A BD898 BD898A BD899 BD899A


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PDF O-220, OT-93 2M/TSP0711 TIC106D equivalent TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
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