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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BD899 Harris Semiconductor Rochester Electronics 18 $0.72 $0.59
BD899 Bourns Inc Bristol Electronics 4,310 $1.13 $0.29

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BD899 datasheet (28)

Part Manufacturer Description Type PDF
BD899 Bourns NPN SILICON POWER DARLINGTONS Original PDF
BD899 Power Innovations NPN SILICON POWER DARLINGTON Original PDF
BD899 General Electric 8 A N-P-N darlington power transistor. 80 V. 70 W. Scan PDF
BD899 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
BD899 Motorola European Master Selection Guide 1986 Scan PDF
BD899 Others Cross Reference Datasheet Scan PDF
BD899 Others Diode, Transistor, Thyristor Datasheets and more Scan PDF
BD899 Others Semiconductor Master Cross Reference Guide Scan PDF
BD899 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BD899 Others Shortform Transistor Datasheet Guide Scan PDF
BD899 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BD899 National Semiconductor Shortform National Semiconductor Datasheet Scan PDF
BD899 National Semiconductor PRO ELECTRON SERIES - JFET Scan PDF
BD899 Texas Instruments 80 V, 8 A, 70 W, NPN silicon power darlington Scan PDF
BD899A Bourns NPN SILICON POWER DARLINGTONS Original PDF
BD899A Power Innovations NPN SILICON POWER DARLINGTONS Original PDF
BD899A General Electric 8 A N-P-N darlington power transistor. 80 V. 70 W. Scan PDF
BD899A Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
BD899A Motorola European Master Selection Guide 1986 Scan PDF
BD899A Others Cross Reference Datasheet Scan PDF

BD899 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
C03GE

Abstract: BD901 BD597 BD899 BD897A BD897 BD896 BD899A BD895A I/BD899
Text: €” bd899a only 3 4« 750 — _ _ vbe bd899.bd901 3 3® — 2.5 — 2.5 v bd899a only 3 4a â , "2.°! _;_uanington Power Transistors File Number 1240 BD895, BD895A, BD897, BD897A, BD899 , BD899A , (BD895A, BD897A, BD899A ) Gain of 750 at 3 A (BD895, BD897, BD899 , BD901) Features: Applications: â , VIEW IUi-S»ll JEDEC TO-220AB The RCA-BD895, BD895A, BD897, BD897A, BD899 , BD899A , and BD901 are , ) from casa for 10 s max. BD897 BD8S7A 60 60 BD899 BD899A 80 80


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PDF 0Q17577 BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 45-60-80-100-Volts, C03GE BD901 BD597 BD899 BD897A BD897 BD896 BD899A BD895A I/BD899
BD901

Abstract: BD897 case BD901 BD899A BD899 BD897A BD895A BD895 1N914 D03bt
Text: BD895, BD895A,BD897, BD897A, BD899 , BD899A , BD901 N-P-N SILICON POWER DARLINGTONS REVISED OCTOBER 1984 , BD895, BD895A, BD897, BD897A, BD899 , BD899A , BD901 N-P-N SILICON POWER DARLINGTONS 62c 3&600 , ) PARAMETER TEST CONDITIONS BD899 , BD899A BD901 UNIT MIN TYP MAX MIN TYP MAX V|BRICEO ic = 100 mA, ìb , . IC = 3 A, See Notes 3 and 4 BD899 , BD 901 2.5 2.5 V VCE = 3V, le = 4A, See Notes 3 and 4 BD899A 2.5 , ”961726 TEXAS INSTR (OPTO) 62C 36602 0 BD895, BD895A,BD897, BD897A, BD899 , BD899A , BD901 N-P-N SILICON POWER


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PDF BD895, BD895A BD897, BD897A, BD899, BD899A, BD901 T-33-29 TQ-220AB BD895 BD897 case BD901 BD899A BD899 BD897A 1N914 D03bt
1993 - transistor BD901

Abstract: BD901 7508A BD897 BD899 BD902 BD900 BD898 BD896 BD895
Text: BD895, BD897, BD899 , BD901 NPN SILICON POWER DARLINGTONS Designed for Complementary Use , ) BD899 V CBO 60 80 BD901 V 100 BD895 Collector-emitter voltage (IB = 0) UNIT 45 BD895 BD897 VALUE 45 BD897 BD899 VCEO 60 80 V 100 BD901 VEBO 5 , Specifications are subject to change without notice. 1 BD895, BD897, BD899 , BD901 NPN SILICON POWER , IB = 0 BD899 0.5 V VCE = 50 V 0.2 Collector cut-off VCB = 100 V IE = 0


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PDF BD895, BD897, BD899, BD901 BD896, BD898, BD900 BD902 O-220 BD899 transistor BD901 BD901 7508A BD897 BD899 BD902 BD898 BD896 BD895
1993 - transistor BD901

Abstract: BD901 BD897 case BD901 BD902 BD900 BD899 BD898 BD896 BD895
Text: BD895, BD897, BD899 , BD901 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations , BD899 VALUE VCBO 60 80 BD901 V 100 BD895 Collector-emitter voltage (IB = 0) UNIT 45 45 BD897 BD899 VCEO BD901 60 80 V 100 V EBO 5 V Continuous , , BD897, BD899 , BD901 NPN SILICON POWER DARLINGTONS AUGUST 1993 - REVISED MARCH 1997 electrical , 60 BD899 MAX 80 BD897 0.5 cut-off current V CE = 40 V IB = 0 BD899 0.5


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PDF BD895, BD897, BD899, BD901 BD896, BD898, BD900 BD902 O-220 BD895 transistor BD901 BD901 BD897 case BD901 BD902 BD899 BD898 BD896 BD895
transistor BD901

Abstract: BD901 bd897
Text: BD895, BD897, BD899 , BD901 NPN SILICON POWER DARLINGTONS C o p y rig h t© 1997, Power Innovations , ) RATING BD895 Collector-base voltage ( lE = 0) BD897 BD899 BD901 BD895 Collector-em itter voltage ( lB = 0) BD897 BD899 BD901 Base-emitter voltage Continuous collector current Continuous base current , processing does not necessarily include testing of all parameters. BD895, BD897, BD899 , BD901 NPN SILICON , BD897 BD899 BD901 V V CE= Collector-em itter 'C E O 30 V 30 V 40 V 50 V 45 V 60 V 80 V lB =


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PDF BD895, BD897, BD899, BD901 BD896, BD898, BD900 BD902 O-220 BD895 transistor BD901 bd897
BD901

Abstract: case BD901 BD899 BD645
Text: BD899A only VBE BD899.BD901 BD899A only VCE(sat) BD899 BD901 BD899A only hfe f = 1 MHz 3 4« 3* 0.016 - 1 , BD895, BD895A, BD897, BD897A, BD899 , BD899A , BD901 HARR IS SENICON]) S E CT OR SbE D File , A (BD895A, BD897A, BD899A ) Gain of 750 at 3 A (BD895, BD897, BD899 , BD901) Features: Applications , BD89S, BD645, BD895A, BDS97, BD897A, BD899 , BD899A , and BD901 are m onolithic silicon n-p-n Darling ton , . BD897 BD897A 60 60 - 5 BD899 BD899A 80 80 BD901 - 100 100 V V V A A W W/°C ·C VCEO(sus


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PDF BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 45-60-80-100-Volts, BD901 case BD901 BD899 BD645
1993 - 7508A

Abstract: No abstract text available
Text: BD895, BD897, BD899 , BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use , BD901 45 BD897 BD899 V CEO BD901 Base-emitter voltage V 100 BD895 Collector-emitter voltage (IB = 0) UNIT 45 E T E L O S B O BD899 VALUE 60 80 V 100 , Specifications are subject to change without notice. 1 BD895, BD897, BD899 , BD901 NPN SILICON POWER , CONDITIONS MIN BD895 BD897 MAX 60 BD899 80 BD901 Collector-emitter TYP 100 V


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PDF BD895, BD897, BD899, BD901 BD896, BD898, BD900 BD902 O-220 BD895 7508A
1993 - Not Available

Abstract: No abstract text available
Text: BD895, BD897, BD899 , BD901 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use , (unless otherwise noted) RATING SYMBOL BD895 Collector-base voltage (IE = 0) BD897 BD899 VALUE 45 V CBO 60 80 BD901 45 BD897 BD899 V CEO BD901 Base-emitter voltage V , Specifications are subject to change without notice. 1 BD895, BD897, BD899 , BD901 NPN SILICON POWER , IB = 0 BD899 0.5 V VCE = 50 V 0.2 Collector cut-off VCB = 100 V IE = 0


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PDF BD895, BD897, BD899, BD901 BD896, BD898, BD900 BD902 O-220 BD895
case BD901

Abstract: BD901 BD895 BD899
Text: °C 'ebo v CEO BD899.BD901 BD899A only VBE BD899.BD901 BD899A only VCE(sal) BD899 BD901 BD899A , BD895, BD895A, BD897, BD897A, BD899 , BD899A , BD901 File Number 1240 8-Ampere N-P-N , (BD895A, BD897A, BD899A ) Gain of 750 at 3 A (BD895, BD897, BD899 , BD901) Features: Applications: 9 2 C S , VEBO. 45 45 BD897 BD897A 60 60 - 5 . 8 0.1 BD899 BD899A 80 80 BD901 - 100 100 'c , 150 - 235 °C 2-263 BD895, BD895A, BD897, BD897A, BD899 , BD899A , BD901 E L E C T R IC A


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PDF BD895, BD895A, BD897, BD897A, BD899, BD899A, BD901 45-60-80-100-Volts, case BD901 BD901 BD895 BD899
1993 - transistor BD901

Abstract: BD901 BD897 BD902 BD900 BD899 BD898 BD896 BD895 case BD901
Text: BD895, BD897, BD899 , BD901 NPN SILICON POWER DARLINGTONS Designed for Complementary Use , ) BD899 V CBO 60 80 BD901 V 100 BD895 Collector-emitter voltage (IB = 0) UNIT 45 BD895 BD897 VALUE 45 BD897 BD899 VCEO 60 80 V 100 BD901 VEBO 5 , Specifications are subject to change without notice. 1 BD895, BD897, BD899 , BD901 NPN SILICON POWER , IB = 0 BD899 0.5 V VCE = 50 V 0.2 Collector cut-off VCB = 100 V IE = 0


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PDF BD895, BD897, BD899, BD901 BD896, BD898, BD900 BD902 O-220 BD899 transistor BD901 BD901 BD897 BD902 BD899 BD898 BD896 BD895 case BD901
BD901

Abstract: BD897 ic 901 BD895 BD899 case BD901
Text: OND EMIC GE S AN Collector-base voltage Open emitter BD899 VCEO CONDITIONS , base V BD899 Emitter-base voltage IC Base current PT 100 Collector current-DC , 60 IC=100mA, IB=0 V BD899 80 BD901 VCEsat TYP. 100 IC=3A ,IB=12mA 2.5 V , BD895 BD897 ICBO Collector cut-off current BD899 BD901 BD897 VCE=30V, IB , =0 BD899 ICEO BD895 0.2 2.0 VCE=50V, IB=0 SEM E Collector cut-off current IN


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PDF BD895/897/899/901 O-220C BD896/898/900/902 BD895 BD897 BD899 BD901 BD901 BD897 ic 901 BD895 BD899 case BD901
B0897

Abstract: D895 BD901 case BD901
Text: BD895, BD897, BD899 , BD901 NPN SILICON POWER DARLINGTONS Copyright t> 1997. Power Innovations , Collector-base voltage (tg = 0) BD897 BD899 BD901 BD895 Coti eel or-emitter voltage ( % = 0) BD897 BD899 BD901 , . I NNOVATI ONS P 3-11 BD895, BD897, BD899 , BD901 NPN SILICON POWER DARLINGTONS A U G U ST , 60 V 80 V 45V 60 V 80 V tB =0 0D895 BD897 BD899 BD901 BD895 B0897 BD899 BD901 T c = 100°C Tc , ) (see Notes 3 and 4) 750 BD895 BD897 BD899 BD901 0.5 0.5 0.5 0.5 0.2 0.2 0.2 0.2 2 2 2 2 2 mA mA mA


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PDF BD895, BD897, BD899, BD901 BD896, B0898, BD900 BD902 O-220 BD895 B0897 D895 case BD901
BD901

Abstract: BD897 BD895 BD899 case BD901 bd901 power applications
Text: Collector-base voltage BD897 BD899 VALUE 45 Open emitter 60 80 BD901 Collector-emitter voltage V 100 BD895 VCEO UNIT 45 BD897 BD899 Open base BD901 60 80 V , Collector-emitter breakdown voltage MIN MAX UNIT 45 BD897 60 IC=100mA, IB=0 V BD899 80 , =0 TC=100 0.2 2.0 VCB=60V, IE=0 TC=100 0.2 2.0 BD899 VCB=80V, IE=0 TC=100 0.2 2.0 BD901 VCB=100V, IE=0 TC=100 0.2 2.0 BD895 VCE=30V, IB=0 BD897 VCE=30V, IB=0 BD899


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PDF BD895/897/899/901 O-220C BD896/898/900/902 BD895 BD897 BD899 BD901 BD901 BD897 BD895 BD899 case BD901 bd901 power applications
D895

Abstract: transistor Bd 699 transistor BD901 BD695A BD895 BD897A D-897 bd897 motorola
Text: MOTORCLA sc XSTRS/R F lE E D I b3b?254 GGfl47bS T | MOTOROLA TECHNICAL DATA SEMICONDUCTOR BD895, BD895A BD897, BD897A BD899 , BD899A BD901 DARLINGTON 8 AMPERE NPN SILICON POWER TRANSISTORS 45-60-80-100 V O L T S 70 W ATTS PLASTIC POWER SILICON NPN DARLINGTONS . for use as output , , 699A, 701. M A X IM U M R A TIN G S BD895 BD899 Symbol BD895A BD897 BD899A BD897A V C EO VC B veb , GüaM7bb 1 | BD895, BD895A, BD897, BD897A, BD899 , BD899A , BD901 T-33-29 E L E C T R IC A L C H A R A


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PDF GGfl47bS BD895, BD895A BD897, BD897A BD899, BD899A BD901 BD896, D895 transistor Bd 699 transistor BD901 BD695A BD895 D-897 bd897 motorola
D895

Abstract: BD 895 bdw 34 a
Text: > 62C 3 6 5 9 9 BD895, BD895A,BD897, BD897A, BD899 , BD899A , BD901 N-P-N SILICON POWER DARLINGTONS , BD899 BD899A 80 V 80 V BD901 100V 100V Collector-emitter voltage (Ib = 0 ) Emitter-base voltage , , BD895A, BD897, BD897A, BD899 , BD899A , BD901 N-P-N SILICON POWER DARLINGTONS electrical characteristics , , BD895A, BD897, BD897A, BD899 , BD899A , BD901 N-P-N SILICON POWER DARUNGTONS thermal characteristics , , BD897A, BD899 , BD899A , BD901 N-P-N SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS S TA TIC FORW ARD


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PDF BD895, BD895A BD897, BD897A, BD899, BD899A, BD901 T-33-29 -220AB BD895 D895 BD 895 bdw 34 a
BDX538

Abstract: TP121 2N6383 2N6384 2N6385 2N6056 2N6650 BDX83 BDX83A RCA1000
Text: 65 BDX53B 8 80 750 min. 3 3 60 BD647 8 80 750 min. 3 3 62.5 BD899 , A 8 80 750 min. 3 3 7Q 2N6045


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PDF 000S733 2N6385 2N6650 2N6383 BDX83 2N6055 2N6384 2N6576 BDX83A RCA1000 BDX538 TP121 2N6056
BDX53D

Abstract: D45VH4 D44H5 BD900 BUS36 bdw41 BD807 D44H8 BD901 2N6041
Text: 1 Baza/Base 2 Kolektor/Collector 3 Emitor/Emitter J0,7maks 5,2mgks Sl./Fig. 60 Silicijevi transistorji 0,5 A do 15 A Silicon transistors 0.5 A to 15 A Tip/Type Uceo lo Ptoi hfE pri/at le fi Si./ NPN PNP (V) . (A) ' m min/maks (A) (MHz) Fig. 2N6044 2N6041 80 •:'•- 8 •• 75 1k/l0k 4 4 TIP101 TIP106 ¿v ■80 1k/20k 3 4 BDX53B BDX54B . 60 750 min 3 TIP131 TIP136 -• :.: 70 1k/15k 4 BD899 BD900 - i - " ^ . - i - 70 750 min 3 BD899A BD900A • ., '. -'- "70 750 min 4


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PDF 2N6044 2N6041 TIP101 TIP106 1k/20k BDX53B BDX54B TIP131 TIP136 1k/15k BDX53D D45VH4 D44H5 BD900 BUS36 bdw41 BD807 D44H8 BD901
r3673

Abstract: Y1031 TIC106D Thyristor r3673 Philippines R3672 TIP43 BD657 transistor bf65 BF65-S transistor bf64
Text: BD744C BD744C-S BD897A BD897A-S BD898 BD898-S BD899 BD899A BD899A-S BD899-S BD900 BD900-S


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PDF O-220 BLBF39 MP150SG, KTMC-1030NAP, thyrisTIP42C-S TIP42-S TIP43 TIP43-S r3673 Y1031 TIC106D Thyristor r3673 Philippines R3672 TIP43 BD657 transistor bf65 BF65-S transistor bf64
BOX53C

Abstract: box54c BOX33C box53b transistor box54c box53a box54 box34c box53 b0808
Text: 1.5 typ 3 4# 80 BDX53B BDX54B 750 min 3 60 TIP131 TIP136 1k/15k 4 70 BD899 BD900 750 min 3 70 BD899A BD900A 750 min 4 70 100 BDX53C BDX54C 750 min 3 60 TIP132 TIP137


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PDF O-220AB 2N6386 k/20k BDX53 BDX54 BD895 BD896 BD895A BD896A BDX53A BOX53C box54c BOX33C box53b transistor box54c box53a box54 box34c box53 b0808
1993 - Not Available

Abstract: No abstract text available
Text: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE (TOP VIEW) 1 C 2 E This series is obsolete and not recommended for new designs. B 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless


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PDF BD896, BD898, BD900, BD902 BD895, BD897, BD899 BD901 O-220 BD896
1993 - Not Available

Abstract: No abstract text available
Text: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD895, BD897, BD899 and BD901 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE (TOP VIEW) 1 C 2 E This series is currently available, but not recommended for new designs. B 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature


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PDF BD896, BD898, BD900, BD902 BD895, BD897, BD899 BD901 O-220 BD896
Not Available

Abstract: No abstract text available
Text: AFD899 A779'683899''99 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9-74DA3AA  BD899


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PDF 12343567789A9BBCDE9A9FD 23456783952A BBBCDE8DF93 1D119 9DD69 568E9% D1D999 DD1CFED99. 5358DFF
1993 - BD901

Abstract: BD895 BD896 BD897 BD898 BD899 BD900 BD902
Text: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BD895, BD897, BD899 and BD901 70 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0


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PDF BD896, BD898, BD900, BD902 BD895, BD897, BD899 BD901 O-220 BD900 BD901 BD895 BD896 BD897 BD898 BD900 BD902
1993 - Not Available

Abstract: No abstract text available
Text: BD896, BD898, BD900, BD902 PNP SILICON POWER DARLINGTONS G Designed for Complementary Use with BD895, BD897, BD899 and BD901 G 70 W at 25°C Case Temperature G 8 A Continuous Collector Current G Minimum hFE of 750 at 3V, 3A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BD896 Collector-base


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PDF BD896, BD898, BD900, BD902 BD895, BD897, BD899 BD901 O-220 BD896
BDX334

Abstract: bdy37a BD649 BD795 BD796 bu208 BD798 BD799 BD800 BDY56
Text: 3.00 3.00 3.00 2 2 2 3 3 3 3 1 T022Ö T0220 T0220 T0220 BD895A BD897 BD897A BD899 NPN NPN NPN NPN 70.0 , 3.00 3 3 3 3 1 1 1 1 T0220 T0220 T0220 T0220 BD899A BD901 BDX10 BDX13 NPN NPN NPN NPN 70.0 70.0 117


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PDF DB5a35M 0QDD053 BD645 BD647 BD649 BD795 T0220 T0220 BDX334 bdy37a BD796 bu208 BD798 BD799 BD800 BDY56
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