The Datasheet Archive

BD371C-10 datasheet (5)

Part Manufacturer Description Type PDF
BD371C-10 Others Basic Transistor and Cross Reference Specification Scan PDF
BD371C-10 Others Shortform Transistor PDF Datasheet Scan PDF
BD371C-10 National Semiconductor Shortform National Semiconductor Datasheet Scan PDF
BD371C-10 National Semiconductor Bipolar Pro Electron Series Scan PDF
BD371C-10 National Semiconductor PRO ELECTRON SERIES - JFET Scan PDF

BD371C-10 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BCW91

Abstract:
Text: -92F 610 0.8 60 100 300 # 150 2 0.25 0.15 135 10 + BCW91 BCW94 N TO-92F 540 0.4 40 100 400 # 50 2 0.25 0.05 , 40 100 300 # 50 2 0.25 0.05 135 10 BCW94 BCW97 P TO-92F 540 0.4 40 100 300 # 50 2 0.25 0.05 135 10 BCW95 BCX25 N TO-92F 350 0.2 60 70 400 10 5 0.25 0.1 100 6 BCX26 BCX26 P TO-92F 350 0.2 60 70 400 10 , 1.5 80 40 400 # 100 1 0.7 1 50 30 BD370C BFR10 N TO-39 800 . 40 60 120 150 10 0.22 0.15 250 8 BFR11 N TO-18 400 - 40 60 120 150 10 0.22 0.15 250 8 _ BFR18 N TO-18 500 0.5 55 60 180 150 1 0.25


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PDF BCW78 BCW79 BCW80 BCW90 O-92F BCW92 BCW91 BCW93 BCW92 BCW93 BCW92 A, B BD370B BCW95 BCW94
BCW93

Abstract:
Text: 60 100 300 # 150 2 0.25 0.15 135 10 + BCW91 BCW94 N TO-92F 540 0.4 40 100 400 # 50 2 0.25 0.05 70+ 8 , 50 2 0.25 0.05 135 10 BCW94 BCW97 P TO-92F 540 0.4 40 100 300 # 50 2 0.25 0.05 135 10 BCW95 BCX25 N TO-92F 350 0.2 60 70 400 10 5 0.25 0.1 100 6 BCX26 BCX26 P TO-92F 350 0.2 60 70 400 10 5 0.25 0.1 , BD370C BFR10 N TO-39 800 . 40 60 120 150 10 0.22 0.15 250 8 BFR11 N TO-18 400 - 40 60 120 150 10 0.22 , 40 _ 150 1 0.25 0.15 60 20 BFR22 N TO-39 5000 □ 1 65 40 120 150 10 0.15 0.15 15 _ BFR23 P TO


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PDF BCW78 BCW79 BCW80 BCW90 O-92F BCW92 BCW91 BCW93 BD370 BCW96 BCW95 BCW94
BD371C

Abstract:
Text: =5mA,VCE=2V IC=100mA,VCE=1V Group - 6 Group - 10 Group - 16 IC=500mA,VCE=2V IC=1A, IB=0.1A Base , TOL . 4.8 5.2 4.2 NOTES 12.7 12.7 ± 1.0 ± 0.3 6.35 ± 0.4 F 5.08 + 0.6 , H3 | C1 - C2 | (p) 1.0 1.3 ± 0.5 ± 0.2 + 0.7 - 0.5 ± 0.2 ± 0.5 1. Maximum alignment , 0.45 A2 B T1 Data Sheet + 0.4 - 0.1 REMARKS * 1 Cumulative pitch error 1.0 mm/20 pitch


Original
PDF QSC/L-000019 BD371A O-237 BD370A, BC371A BD371B BD371C C-120 Rev100702E BD371C BD371 BD371B BD370 transistor bc 138 BC371 BD370A transistor bc 237 npn
BCX60

Abstract:
Text: ) max 'c ImA) VCE (v) max 'c (A) BCX25 N TO-92F 350 0.2 60 70 400 10 5 0.25 0.1 100 6 BCX26 BCX26 P TO-92 F 350 0.2 60 70 400 10 5 0.25 0.1 100 6 BCX25 BCX40 N TO-39 1000 2 80 40 250 500 4 1 0.5 , BD370C BFR10 N TO-39 800 - 40 60 120 150 10 0.22 0.15 250 8 - BFR11 N TO-18 400 - 40 60 120 150 10 0.22 , 1 70 40 _ 150 1 0.25 0.15 60 20 - BFR22 N TO-39 5000 A 1 65 40 120 150 10 0.15 0.15 — 15 — BFR23 P TO-39 7000A 1 65 40 140 150 10 0.65 0.15 — 30 - BFR24 P TO-39 7000A 1 40 50 250 150 10 1.4


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PDF BCX25 O-92F BCX26 BCX26 BCX25 BCX40 BCX45 BCX46 BCX47 BCX48 BCX60 BD370B BD370 BD370C BD371C BFW32 bfr41 BFS94 BFW34
ztx450 equivalent

Abstract:
Text: No file text available


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PDF 2N6714 2N6715 2N6716 2N6717 2N6718 2N6719 2N6720 2N6721 2N6722 2N6723 ztx450 equivalent transistor equivalent ZTX651 ztx650 equivalent MPS651 equivalent MPS751 equivalent ztx751 equivalent ZTX749 equivalent transistor ztx MPSW92 equivalent ZTX Zetex
BD371C-10

Abstract:
Text: BD371C-10 TO-237 (91) 80 80 100 80 25 500 2 63 160 100 1 0.7 1.2* 1A 30 50 200 420 6 (Notes 5 & 6) 38 , ’5C-S S jjE, S £ 5 I 9- o 28 « S ° o cm 5 FT O S. 0W* r-Q, g 2> sS CM U) co d o 10 o m , T- T M t (Notai) 10 <0 e si o o T— o o z TS o z l— œ o Z I 5 TS o Z YO o Z T— O o z T , toff (ns) Max T- 03-C >1 Bipolar Pro Electron Series (Continued) ® S S S 125 10 100 20 «Ç s o ô s CM t- s»., (V) ®(mA) Max Min Max 0.3 10 0.3 10 1.0 1.5 100 o o


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PDF b50113D L5D1130 T-03-01 BD371C-10 BD371D BF936 BF494 yc 236 BC849 BC849C BC850-B BD371B BD371C
BC338 hie hre hfe

Abstract:
Text: (Notes 5 & 6) 38 BD371C-10 TO-237 (91) 80 80 100 80 25 500 2 63 160 100 1 0.7 1.2* 1A 30 50 200 420 6 , BC368 TO-92 (94) 25* 20 5 10 jiA 25 60 5 10 85 375 500 1 60 1A 1 0.5 1A 37 \ BC369 TO-92 (94) 25* 20 5 10 jiA 25 50 5 10 85 375 500 1 60 1A 1 0.5 1A 77 BC546 TO-92 (97) 80 65 6 15 30 110 800 2 5 0.25 10 0.6 100 10 (Notes 1,11) 11 BC546A TO-92 (97) 80 65 6 15 30 110 0.01 5 220 2 5 0.25 10 0.6 100 10 (Notes 1,11) 11 k BC546B TO-92 (97) 80 65 6 15 30 200 0.01 5 450 2 5 0.25 10 0.6 100


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PDF b501130 bS01130 T-03-01 BC338 hie hre hfe BD371C-10 bc368 hie BD370B-10 BF494 BF495 BD371D BF936 BD371C BC368
transistor BD 540

Abstract:
Text: • 50 2 0.25 0.05 70+ 8 BCW97 BCW96 ' P TO-92F 540 0.4 40 100 300» 50 2 0.25 0.05 135 10 BCW94 BCW97 P TO-92F 540 0.4 40 100 300 » 50 2 0.25 0.05 135 10 BCW95 BCX 25 N TO-92F 350 0.2 60 70 400 10 5 0.25 0.1 100 6 BCX 26 BCX26 P TO-92F 350 0.2 60 70 400 10 5 0.25 0.1 100 6 BCX 25 BCX 40 N TO-39 1000 , 371C N TO-237A 750 1.5 80 40 400» 100 1 0.7 1 50 30 BD 37OC BFR 10 N TO-39 800 _ 40 60 120 150 10 0.22 0.15 250 8 „ BFR 11 N TO-18 400 — 40 60 120 150 10 0.22 0.15 250 8 — BFR 18 N TO-18 500


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PDF 609yea BCW94 O-92F BCW96 BCW95 BCW97 BCW94 transistor BD 540 Transistor BFT 99 Transistor BFR 39 Transistor BFR 80 BFW 10 fet transistor BFT 41 Transistor BFT 10 Transistor BFR 38 Transistor BFR 79 371b
1N4548

Abstract:
Text: FT3903 FT3904 FT3905 FT3906 GE- 10 GE-17 GE-20 GET2221 GET2221A GET2222 GET2222A GET2369


Original
PDF 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
bc2378

Abstract:
Text: 80371M TO-237 (91) 80 80 100 80 25 500 2 40 100 100 1 0.7 1.2* 1A 30 50 200 420' 6 5/6 38 BD371C-10 TO , <0 (O to <0 to (0 <0 (0 -ÜI ® o in s o tí) o in s S o tn O in o 10 o 10 O m O tn O o o o o O X <9 "" 1 = s o (0 o <0 o co o (O o in o in o tn o 10 o in o tn o 10 o U) O m , - - - tn m in tn in m U) 10 in in tn in -UI s M M CN O CM CM Ò CM O o o S S o o o o o o o o o o , V co § (0 T- ^ £ s - - s m — ? i tr (o (0 <0 (0 U) tn 10 Cl co co


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PDF tS0113D J15511 SD1130 bc2378 box33c b0348 b0345 b0735 B0346 B0736 b073b b0737 S0239
2sd 5023

Abstract:
Text: 150 1 0.35 0.15 40 25 bc 139 bc 138 n to-39 800 1 30 35 - 100 10 1.5 1 40 25 - bc 139 p to-39 700 0.5 40 40 - 100 10 0.8 0.3 - 6+ bc 119 bc 140 n to-39 800 1 40 40 250# 100 1 1 1 50 25 bc 160 bc 141 , # 100 1 1 1 50 30 bc 141 bc 185 n to-39 700 0.5 40 40 _ 100 10 0.45 0.3 200 8 - bc 210 n to-18 450 0.7 , -39 800 1 60 40 250# 150 2 1 1 50 25 bc313a bc 215 p to-18 400 0.5 30 40 300# 150 10 0.9+ 0.5 150 8 — bc 223 n to-92f 360 0.4 30 100 450# 50 2 0.3 0.1 100 10 - bc 231 p to-92b 625 0.4 30 100 450 50 5


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PDF 13LLSD to-39 2sd 5023 bc 9013 bc 9013 g 2218A 2SC 9012 BC287 mps 1132 cs9012 9416A BC526
2sd 5023

Abstract:
Text: 0.15 40 25 BC 139 BC 138 N TO-39 800 1 30 35 - 100 10 1.5 1 40 25 - BC 139 P TO-39 700 0.5 40 40 - 100 10 0.8 0.3 - 6+ BC 119 BC 140 N TO-39 800 1 40 40 250# 100 1 1 1 50 25 BC 160 BC 141 N TO-39 800 , 1 50 30 BC 141 BC 185 N TO-39 700 0.5 40 40 _ 100 10 0.45 0.3 200 8 - BC 210 N TO-18 450 0.7 25 20 , 60 40 250# 150 2 1 1 50 25 BC313A BC 215 P TO-18 400 0.5 30 40 300# 150 10 0.9+ 0.5 150 8 — BC 223 N TO-92F 360 0.4 30 100 450# 50 2 0.3 0.1 100 10 - BC 231 P TO-92B 625 0.4 30 100 450 50 5 0.25


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PDF -26UNF-2A O-48D 2sd 5023 transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC231
aeg diode Si 61 L

Abstract:
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors , -32 25 -25 -50 12 -16 15 -15 -30 10 - 10 10 - 10 -20 500 1A 2A 2A 3.5A 50 e 500 (typ) 80 @ 1A (typ , Ge Ge Ge bid 6I d 60 60 60 1 1 220 200 550 32 -32 -25 -20 -20 20 -20 -16 -15 -15 10 - 10 -0.3 -0.3 -0.3 3A 3A 10 10 10 100 60 25 20 10 200 500 1 1.5 1.5 -15 -15 -15 -15 AOO -15 -15 -15 -15 bOD -0.3 -0.3 -0.3 -0.3 5 10 10 10 10 15A 10 10 10 10 700 2 2 2 2 2.5A AOO 350 AQO AOO 350 ADD 350 AOO


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PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 BC23B SILICONIX U315 SGS Transistors 2N3750 2N339 2N3299 transistor bf 175 2N2197 GENERAL ELECTRIC
t110 94v 0

Abstract:
Text: .252 9. Germanium 10 . Silicon PNP , max: Vp *'* I'TfrM v-< 11 01 10 30A *0m 75m% , 30 1 50ml 1 Om 6Vds8”BVg8»7 '8 ]TdJ* @ Vgs , ) 9.0M 106 mega M 0.5 volt V (volts) 500m* 103 kilo k 10 amperes A (amperes) 10 102 hecto h 10 deka da 'May also be written as 0.5, with no multiplier 10-1 deci d 10 2 canti c 10-3 milli m , preceding 66-0706 hyphens or slashes are the controlling 66M1 factors in sequencing. The hyphens and 70/ 10


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PDF Barcelona-28, S-171 CH-5400 t110 94v 0 PTC SY 16P 2N2955T philips diode PH 37m 2sk137 trimble R8 model 2 2SA749 2n6259 ssi 2n6258 rca
APY12

Abstract:
Text: ,X.etc.) and two figures running from 10 to 99, for devices primarily intended for industrial , % (accordi ng to IEC63 series E96) series E48) D. 5 % (accordi ng to IEC63 10 % (according to IEC63 , particulierement a 1'usage "grand public". - Une lettre (Z ,Y ,X ,etc.) et deux chiffres de 10 a 99 pour les , . 5% (Wie i n IEC63 : E24 Seri e ) D. 10 % (Wie i n IEC63 : E12 Seri e ) 20% (Wie i n IEC63 : E6 , FERR FERR FERR FERR FERR FERR MULL VAD MBLE VAD MBLE VAD MULL MULL BAT 10 BAT11


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PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BAV77 ac176 BYY32 AEY26 af124 AEY30B zener 9A2 5T acy23 ac188
y51 h 120c

Abstract:
Text: 500MA 500MA 500MA 500MA 10 0 C 10 0 C 100C 100C 100C 240MWF 240MWF 240MWF 240MWF 240MWF 500K 500K , 100C 10 0 C 240MWF 100MWF 100MWF 100C 10 0 C 300MWF 300MWF 400K 180M 200M 200M 200M 18V 36V 60V 40V 60V 15V 15V 60V 40V 60V 4V 2V 20V 30V 30V 100MA 50MA 6A 10A 10A 10 0 C 100C 10 0 J 100C 100C , 60V 40V 40V 30V 30V 30V 30V 30V 10A 15A 15A 15A 20A 100C 100C 10 0 C 10 0 C 10 0 C 80WH 80WH 80WH , 30V 30V 30V 20A 20A 25A 25A 25A 100C 10 0 C 10 0 C 10 0 C 10 0 C PG PG PG PG PG T03 TOIA TOIA TOIA


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PDF 500MA 500MA 240MWF 240MWF y51 h 120c ac128 bd192 bd124 MM1711 BD214 al103 KT368 AFY18 BFQ59
BLY34

Abstract:
Text: (column 2) 1 K 3 Type Mnfr. 4 5 8 7 a 9 10 11 / Ma Pi Sb Pb Ab _fi!L 12 B m ax (IT*) (M , pi Bb 7 8 » JX L 10 11 ^max Pb Ab P ,o . (mA) (mW) x 12 B 13 (mA) 14 Comments ' , , Pennsylvania 15697, USA Tm TT TW Tx Un Va Wh Material (column 4) 1 K 3 Type Mnfr. e 6 pi n » 10 11 , 5) 1 2 3 K Type Mnfr. 4 1 ! Sb Pb a 10 11 ma) ^m ax P ,o , (V) M a p ! 6 • (mA , case) Package outline (column 6 1 2 3 K Type Mnfr. 4 7 5 Ma pi 1 8 10 ii max P ,o , (mA


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PDF
THERMISTORS nsp 037

Abstract:
Text: . £1.000each BLC80/ 10 Board Level Computer Hardware Ref. Manual (Supplied with b l c s o / io , . £1.500each MISCELLANEOUS PUBLICATIONS PUB 1 PUB 2 PUB 3 PUB 6 PUB 7 PUB 8 PUB 9 PUB 10 , 1.431(1 0.543(1 1.040(1 0 .3 5 5 (1 0 0 + ) 0.428(100 + ) 1.049( 10 + ) 0.395(100 + ) 0.926(25 + , earest + ) + ) + ) + ) + ) 0.124 (5K-10K) 0.300 (1K + ) 1.361( 10 + ) 1.196(30 + ) 3.713( 10 + ) 3.263(30 + ) 1.361( 10 + ) 1.196(30 + ) by LM301AT or LM301AH by LM301AN A lte rna tive


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PDF 200X300X360m THERMISTORS nsp 037 Thyristor TAG 9118 a1273 y k transistor ICA 0726 0148 Transformer AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
2002 -

Abstract:
Text: 40 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 0.8 AMPERES / WOB , 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / WOB B40C1000 B80C1000 B125C1000 B250C1000 B380C1000 B500C1000 100 200 300 600 900 1200 1.0 1.0 1.0 1.0 1.0 1.0 50 50 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / DIL DF005 DF01 DF02 DF04 DF06 DF08 DF10 50 100 200 400 600


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PDF B40C800 B80C800 B125C800 B250C800 B380C800 B500C800 45osed KBPC5000GS KBPC5001GS KBPC5002GS mt3514 KBPC606 mt2502 KBJ15J zener+diode+phc+10 B80-C B500C1000 B40C500 B250C500
2003 - GFM 64A

Abstract:
Text: 53.6 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 , 37 38 34 35 32 33 29 30 27 28 25 26 23 24 21 22 18 19 17 18 15 16 14 14.5 12.5 13 11.5 12 10 11 9.0 , 143 137 165 158 176 168 187 179 198 189 220 210 242 231 275 263 330 315 385 368 440 420 1.0 1.0 1.0


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PDF DO-41 P4KE10 P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 GFM 64A GDV 64A 625 GFG GFM 85A tvs SMC MARKING GFM 57, TVS GFM 17A GFM 15A GER 78A 79mcc
2003 - mb101

Abstract:
Text: DB103 200 40 DB104 400 40 DB105 600 40 DB106 800 40 DB107 1000 40 1.0 HDB101G 50 40 HDB102G 100 40 , 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10 10 10 10 10 10 10 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.0 1.0 1.0 1.3 1.7 1.7 1.7 1.0 1.0


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PDF MB05M MB10M DB101 DB102 DB103 DB104 DB105 DB106 DB107 HDB101G mb101
2011 - Not Available

Abstract:
Text: -8 RG1676-9 RG1676- 10 RG1676-11 RG1676-12 RG1676-13 RG1676-14 RG1676-15 RG1676-16 RG1676-17 RG1676 , ® RESISTANCE TOLERANCE OHMS % 100 100 10 220 220 100 100 100 220 220 220 220 220 220 220 220 100 220 220 100 10 220 220 220 220 47 47 47 200 100 22 100 50 220 220 220 100 50 50 15 33 15 47 100 220 10 220 100 100 470 220 22 75 47 10 50 100 220 220 220 68 220 50 220 10 820 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10


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PDF RG1676 RG1676 RG1676-1 RG1676-2 RG1676-3 RG1676-4 RG1676-5 RG1676-6 RG1676-7 RG1676-8
2000 - SR1K-2

Abstract:
Text: CECC 42 000 203 10 /00 SIOV Metal Oxide Varistors HICAP Maximum ratings (TA = 85 °C) Type , 23/­ 0 + 23/­ 0 + 23/­ 0 Max. clamping voltage v i V A 40 5,0 40 10 ,0 40 5,0 40 5,0 40 10 ,0 40 10 ,0 40 10 ,0 58 58 58 58 58 58 58 5,0 10 ,0 5,0 5,0 5,0 10 ,0 10 ,0 C ± 20% Derating V /I , 275 274 274 274 275 275 ± 10 ± 10 ± 10 ± 10 ± 10 ± 10 ± 10 New ordering codes implemented (refer to chapter Varistor Type Cross-Reference List) 1) at 0,5 V 204 10 /00 SIOV Metal Oxide


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PDF
2010 - CL05B224KQ5NNN

Abstract:
Text: 1.25±0.10 2.00±0.15 2.00±0.20 1.25±0.15 1.25±0.20 5 5 8 C F Q 0.2+0.15/-0.1 10 , High Capacitance Table (X5R) Capacitance (uF) Size(mm) Vr(V) 4 6.3 0402(1005) 10 16 25 4 6.3 10 0603(1608) 16 25 50 4 6.3 10 0805(2012) 16 25 50 6.3 10 1206(3216) 16 25 50 6.3 1210(3225) 10 16 25 0.1 0.22 0.47 1 2.2 4.7 10 22 47 , ) 6.3 0402(1005) 0.3 1 2.2 4.7 10 22 33 47 X6S 10 Part Numbering


Original
PDF CL31F226ZPHNNN CL31F226ZQHNNN CL32F106ZAHLNN CL32F106ZOELNN CL32F226ZPJNNN CL32F226ZPULNN CL32F476ZQJNNN CL32F107ZQJNNN CL05B224KQ5NNN CL10B105KA8NNN CL31A106KOHNNN
2005 - SMAJ10C

Abstract:
Text: with a 10 /1000µs waveform * Optimized for LAN protection applications * Low clamping * Very fast , 150 °C Peak Pulse Current on 10 /1000µs waveform (Note 1, Fig. 1) Operating Junction and , . IT (mA) VWM (V) Maximum Reverse Leakage @ VWM IR (µA) SMAJ5.0C 6.40 7.82 10 5.0 1600 41.7 SMAJ5.0CA 6.40 7.25 10 5.0 1600 43.5 9.2 SMAJ6.0C 6.67 8.15 10 6.0 1600 35.1 11.4 SMAJ6.0CA 6.67 7.37 10 6.0 1600


Original
PDF 188CA DO-214AC) UL94V-O SMAJ78CA SMAJ85A SMAJ188CA SMAJ10C SMAJ10CA SMAJ11C SMAJ11CA SMAJ12C SMAJ12CA SMAJ13C SMAJ15CA SMAJ24CA
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