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Part Manufacturer Description Datasheet Download Buy Part
ULQ2003ADRG4 Texas Instruments Darlington Transistor Arrays 16-SOIC
ULQ2003ADG4 Texas Instruments Darlington Transistor Arrays 16-SOIC
TIP117 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220
TIP115 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220
TIP121 Texas Instruments NPN Darlington - Connected Silicon Power Transistors 3-TO-220
SN75468N Texas Instruments High-Voltage, High-Current Darlington Transistor Arrays 16-PDIP 0 to 70

BD262 DARLINGTON Datasheets Context Search

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2001 - mje15033 replacement

Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON 2n3055 replacement 2SC1013 replacement MJ2955 replacement
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Darlington Transistors General­purpose EpiBase power Darlington transistors, suitable for linear and switching applications. · · · · · · Replacement for 2N3055 and Driver High Gain Darlington Performance Built­in Diode Protection for Reverse , DARLINGTON 60, 90, 120 VOLTS 120 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ , Data. DARLINGTON SCHEMATIC COLLECTOR BASE [4k [ 50 EMITTER REV 7 3­144 Motorola


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PDF 2N3055 2N6576 2N6577 2N6578 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON 2n3055 replacement 2SC1013 replacement MJ2955 replacement
2001 - D45H11 equivalent replacement

Abstract: 2N5036 equivalent BU108 BDW93C equivalent MJ10009 BU100 BU326 2SB557 equivalent BD420 equivalent MJE6044 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10009 Darlington transistor is designed for high­voltage , Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS CASE , | @ 1 MHz FE (2) Darlington (3)Switching tests performed w/special application simulator circuit. See , MHz FE (2) Darlington (3)Switching tests performed w/special application simulator circuit. See data


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PDF MJ10009 Volt32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D45H11 equivalent replacement 2N5036 equivalent BU108 BDW93C equivalent BU100 BU326 2SB557 equivalent BD420 equivalent MJE6044 equivalent
2001 - 3904 Transistor

Abstract: BU108 driver ignition coil ignition coil drivers ignition control 2N3055/TRANSISTOR REPLACEMENT GUIDE 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint BU326
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Darlington Transistors The MJE5740, 41, 42 Darlington transistors are designed for high­voltage power switching in inductive circuits , MJE5741* MJE5742* *Motorola Preferred Device POWER DARLINGTON TRANSISTORS 8 AMPERES 300, 350, 400 , 1000 700 MJF18009 MJF13009 (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests performed w , TIP32C MJE9780 0.3 typ 1 3 5 typ (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests


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PDF MJE5740, MJE5740 MJE5741* MJE5742* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 3904 Transistor BU108 driver ignition coil ignition coil drivers ignition control 2N3055/TRANSISTOR REPLACEMENT GUIDE 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint BU326
2001 - BUT34 equivalent

Abstract: BU323A equivalent BU108 2N3055 BU100 BU326 MJ3001 equivalent bc 574 transistor TIP34C equivalent BUV22 equivalent
Text: Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS The BUT34 Darlington transistor is designed for high­voltage , | @ 1 MHz FE (2) Darlington (3)Switching tests performed w/special application simulator circuit. See , MHz FE (2) Darlington (3)Switching tests performed w/special application simulator circuit. See data , 2N6292 BD801 BU407 2N6107 BD802 BU406 BU522B (2) (1)|h | @ 1 MHz FE (2) Darlington (3)Switching


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PDF BUT34 BUT34 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUT34 equivalent BU323A equivalent BU108 2N3055 BU100 BU326 MJ3001 equivalent bc 574 transistor TIP34C equivalent BUV22 equivalent
2001 - 2SA627

Abstract: BD130 TO126 BDX33D equivalent BU108 TIP-551 2N3025 2SC2536 Transistor 3202 1 A 60 BU100 2SD504
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10007 Darlington transistor is designed for high­voltage , 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS CASE 1­07 TO­204AA (TO , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details


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PDF MJ10007 Curr32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2SA627 BD130 TO126 BDX33D equivalent BU108 TIP-551 2N3025 2SC2536 Transistor 3202 1 A 60 BU100 2SD504
2001 - Transistor 2sC1060

Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 BDW59 MJ1000 BUT56 BD241C MJ4030 MOTOROLA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Complementary Silicon Power Transistors . . , Range TJ, Tstg ­ 55 to + 150 DARLINGTON 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 ­ 100 , [ 8.0 k [ 60 EMITTER [ 8.0 k [ 60 EMITTER Figure 14. Darlington Schematic 3­216 Motorola , 1000 700 MJF18009 MJF13009 (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests performed w , TIP32C MJE9780 0.3 typ 1 3 5 typ (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests


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PDF BDW46 BDW42/BDW47 220AB BDW42* BDW47* TIP73B TIP74 TIP74A TIP74B Transistor 2sC1060 2SD460 2SC143 All similar transistor 2sa715 BU108 BDW59 MJ1000 BUT56 BD241C MJ4030 MOTOROLA
2001 - 2N6058

Abstract: application MJ10023 BU108 BU326 2SB56 MJ15022 equivalent bd139 equivalent transistor BDX54 mj15004 equivalent darlington tip31
Text: Darlington Transistors with Base-Emitter Speedup Diode Designer's MJ10022 MJ10023 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS The MJ10022 and MJ10023 Darlington , 40/100 3k/20k 14/34 6/30 1000 700 MJF18009 MJF13009 (1)|h | @ 1 MHz FE (2) Darlington (3 , ) TIP31C 150 TIP32C MJE9780 0.3 typ 1 3 5 typ (1)|h | @ 1 MHz FE (2) Darlington (3)Switching , 2N6107 BD802 BU406 BU522B (2) (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests performed w


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PDF MJ10022 MJ10023 MJ10023 Performanc32 TIP73B TIP74 TIP74A TIP74B TIP75 2N6058 application MJ10023 BU108 BU326 2SB56 MJ15022 equivalent bd139 equivalent transistor BDX54 mj15004 equivalent darlington tip31
2001 - MJ3001 equivalent

Abstract: bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent BDT65C equivalent bd139 equivalent transistor BU108 MJH11021 equivalent darlington tip31
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10005 Darlington transistor is designed for high­voltage , Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS Fast Turn­Off , 40/100 3k/20k 14/34 6/30 1000 700 MJF18009 MJF13009 (1)|h | @ 1 MHz FE (2) Darlington (3 , ) TIP31C 150 TIP32C MJE9780 0.3 typ 1 3 5 typ (1)|h | @ 1 MHz FE (2) Darlington (3)Switching


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PDF MJ10005 MJ10005* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ3001 equivalent bd139 equivalent transistor equivalent book 2SC2073 2N3055 equivalent transistor NUMBER MJE371 equivalent BDT65C equivalent bd139 equivalent transistor BU108 MJH11021 equivalent darlington tip31
2001 - MJ2955 replacement

Abstract: diode T 3512 H BD581 BU108 tip122 pin configuration motorola diode cross reference MJE-3439 free transistor equivalent book 2sc789 2SA756 2SA814 equivalent
Text: Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS The BUT33 Darlington transistor is designed for high­voltage , | @ 1 MHz FE (2) Darlington (3)Switching tests performed w/special application simulator circuit. See , MHz FE (2) Darlington (3)Switching tests performed w/special application simulator circuit. See data , 2N6292 BD801 BU407 2N6107 BD802 BU406 BU522B (2) (1)|h | @ 1 MHz FE (2) Darlington (3)Switching


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PDF BUT33 BUT33 204AE TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJ2955 replacement diode T 3512 H BD581 BU108 tip122 pin configuration motorola diode cross reference MJE-3439 free transistor equivalent book 2sc789 2SA756 2SA814 equivalent
2001 - automotive ignition tip162

Abstract: BU108 2N6556 2sc331 BUW46 mj295 d41d MJ1000 FT47 MJE13009
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high­voltage, high­current Darlington transistors designed for automotive ignition , MJ10012 MJH10012 10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS 1k , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details


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PDF MJ10012 MJH10012 MJH10012 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A automotive ignition tip162 BU108 2N6556 2sc331 BUW46 mj295 d41d MJ1000 FT47 MJE13009
2001 - TIP142 TRANSISTOR REPLACEMENT

Abstract: replacement for TIP147 high end amplifier schematics 2n3055 BDW51C schematics BD262 DARLINGTON TIP142 TIP147 pin configuration NPN transistor tip41c BU108 2N6022 transistor tip142
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Complementary Silicon Power Transistors . . , * PNP TIP145 TIP146* TIP147* *Motorola Preferred Device NPN 10 AMPERE DARLINGTON COMPLEMENTARY , Ambient _C/W _C/W (1) 5 ms, v 10% Duty Cycle. 35.7 CASE 340D­01 DARLINGTON SCHEMATICS , 1000 700 MJF18009 MJF13009 (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests performed w , TIP32C MJE9780 0.3 typ 1 3 5 typ (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests


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PDF TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP73B TIP74 TIP74A TIP74B TIP142 TRANSISTOR REPLACEMENT replacement for TIP147 high end amplifier schematics 2n3055 BDW51C schematics BD262 DARLINGTON TIP142 TIP147 pin configuration NPN transistor tip41c BU108 2N6022 transistor tip142
2001 - mj150* darlington mj15002

Abstract: BU108 2SA1046 bc 574 All similar transistor 2sa715 silicon npn 2SD716 transistor PNP transistor motorola mj2268 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Complementary Silicon Power Transistors . . , NPN DARLINGTON 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80, 100 VOLTS 160 WATTS _C , EMITTER [ 8.0 k [ 60 EMITTER Figure 15. Darlington Schematic 3­116 Motorola Bipolar Power , MJF18009 MJF13009 (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests performed w/special application , MJE9780 0.3 typ 1 3 5 typ (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests performed w


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PDF 2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 2N6285 2N6286 mj150* darlington mj15002 BU108 2SA1046 bc 574 All similar transistor 2sa715 silicon npn 2SD716 transistor PNP transistor motorola mj2268 BU326 BU100
2001 - bu806 REPLACEMENT

Abstract: BU108 k 3569 2SD211 BU326 2SC1419 2SC1943 TL MJE2955T NSP2100 BU806
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Darlington Power Transistor This Darlington , (max) BU806 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details , 2N6107 BD802 BU406 BU522B (2) (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests performed w


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PDF 220AB BU806 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C bu806 REPLACEMENT BU108 k 3569 2SD211 BU326 2SC1419 2SC1943 TL MJE2955T NSP2100 BU806
2001 - 2sc1943 circuit diagram

Abstract: TIP42C DIAGRAM pin diagram mje13003 TRANSISTOR tip41c schematic diagram 2N3055 4D TIP31 NPN Transistor diagram BD139 transistor circuit diagram BU108 2N3055 TO-218 Package tip122 tip127 audio amp schematic
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high­voltage power Darlington with a built­in , ­220 Packages MAXIMUM RATINGS BU323Z AUTOPROTECTED DARLINGTON 10 AMPERES 360 ­ 450 VOLTS CLAMP 150 WATTS , | @ 1 MHz FE (2) Darlington (3)Switching tests performed w/special application simulator circuit. See , MHz FE (2) Darlington (3)Switching tests performed w/special application simulator circuit. See data


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PDF BU323Z TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2sc1943 circuit diagram TIP42C DIAGRAM pin diagram mje13003 TRANSISTOR tip41c schematic diagram 2N3055 4D TIP31 NPN Transistor diagram BD139 transistor circuit diagram BU108 2N3055 TO-218 Package tip122 tip127 audio amp schematic
2001 - CASE 221A Style 1

Abstract: BU108 MJE520 equivalent Darlington NPN Silicon Diode BU326 2N3055 BU100 BD907 equivalent 2SC144 2N555
Text: Darlington Transistors with Base-Emitter Speedup Diode Designer's MJ10020 MJ10021 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details , 2N6107 BD802 BU406 BU522B (2) (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests performed w


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PDF MJ10020 MJ10021 MJ10021 Performa32 TIP73B TIP74 TIP74A TIP74B TIP75 CASE 221A Style 1 BU108 MJE520 equivalent Darlington NPN Silicon Diode BU326 2N3055 BU100 BD907 equivalent 2SC144 2N555
2001 - MJH11021 equivalent

Abstract: BUV44 FT317 mje15033 replacement BD262 DARLINGTON SDT9202 BD133 2SC1903 IR641 2SC2159
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH10012 (See MJ10012) Complementary Darlington , Temperature Range 150 1.2 Watts W/_C TJ, Tstg ­ 65 to + 150 15 AMPERE DARLINGTON COMPLEMENTARY SILICON , Figure 9. Darlington Schematic Motorola Bipolar Power Transistor Device Data 3­829 CASE 221D , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details


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PDF MJH10012 MJ10012) MJH11018, MJH11020, MJH11022, MJH11017* MJH11019* MJH11021* MJH11018* MJH11020* MJH11021 equivalent BUV44 FT317 mje15033 replacement BD262 DARLINGTON SDT9202 BD133 2SC1903 IR641 2SC2159
2001 - 2SC2246

Abstract: 2SD669 equivalent RCA1C03 BUW84 2SD1178 BD875 equivalent BU108 2N6407 2N6026 TIPL760A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Complementary Silicon Power Transistors . . , MJH6283* MJH6284* PNP MJH6285 MJH6286* MJH6287* *Motorola Preferred Device NPN DARLINGTON 20 AMPERE , voltage polarities. Figure 2. Switching Times Test Circuit 3­822 Figure 3. Darlington Schematic , ) 20/100 40/100 3k/20k 14/34 6/30 1000 700 MJF18009 MJF13009 (1)|h | @ 1 MHz FE (2) Darlington , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details


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PDF 2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 TIP73B TIP74 TIP74A TIP74B 2SC2246 2SD669 equivalent RCA1C03 BUW84 2SD1178 BD875 equivalent BU108 2N6407 2N6026 TIPL760A
2001 - 2SD669 equivalent

Abstract: BD801 BDY29 equivalent 2N6021 2SD436 BU108 2SC2080 2SC2270 2SD544 BD827
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 (See 2N3773) Darlington Silicon Power , SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60 ­ 80 VOLTS 65 WATTS BASE [ 8 k [ 120 CASE , Figure 1. Darlington Schematic MAXIMUM RATINGS (1) Rating Symbol VCEO VCB VEB IC IB 2N6667 60 60 2N6668 , 1000 700 MJF18009 MJF13009 (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests performed w , TIP32C MJE9780 0.3 typ 1 3 5 typ (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests


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PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent 2N6021 2SD436 BU108 2SC2080 2SC2270 2SD544 BD827
2001 - bd775

Abstract: MJ423 MJW16010 AMPLIFIER 2SD718 2sb688 schematic BUX98A BD776-778-780 MDS20 bd776 Diode BAY 61 BD779
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Darlington Complementary Silicon Power , to + 150 DARLINGTON 4­AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45, 60, 80 VOLTS 15 WATTS , . Darlington Circuit Schematic Motorola Bipolar Power Transistor Device Data 3­193 CASE 221D Isolated , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details


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PDF BD776 BD777, BD780 BD777 BD778 TIP73B TIP74 TIP74A bd775 MJ423 MJW16010 AMPLIFIER 2SD718 2sb688 schematic BUX98A BD776-778-780 MDS20 Diode BAY 61 BD779
2001 - 2SD418

Abstract: k 3436 transistor TIP33C equivalent IR647 TIP121 transistor BU108 buv18a 2SC1086 BD827 2N3055 transistor equivalent to220
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 SWITCHMODE Series NPN Silicon Power Darlington Transistor The MJ10000 Darlington transistor is designed for high­voltage, high­speed, power switching in , SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ , 1000 700 MJF18009 MJF13009 (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests performed w , TIP32C MJE9780 0.3 typ 1 3 5 typ (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests


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PDF MJ10000 204AA TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SD418 k 3436 transistor TIP33C equivalent IR647 TIP121 transistor BU108 buv18a 2SC1086 BD827 2N3055 transistor equivalent to220
2001 - mj10016

Abstract: 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent MJE371 equivalent 2sd526 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent D45H11 equivalent replacement
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10015 and MJ10016 Darlington transistors are designed for , POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS 50 8 CASE 197­05 TO­204AE TYPE (TO , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details


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PDF MJ10015 MJ10016 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent MJE371 equivalent 2sd526 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent D45H11 equivalent replacement
2001 - BU323A equivalent

Abstract: automotive ignition tip162 BU108 2SA1046 BC337 rbe bc337 cross-reference 2SC190 replacement transistor BC337 BU326 TIP102 Darlington transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor , Reliability and Stability. BASE COLLECTOR BU323A 16 AMPERE PEAK POWER TRANSISTOR DARLINGTON NPN SILICON , 40/100 3k/20k 14/34 6/30 1000 700 MJF18009 MJF13009 (1)|h | @ 1 MHz FE (2) Darlington (3 , ) TIP31C 150 TIP32C MJE9780 0.3 typ 1 3 5 typ (1)|h | @ 1 MHz FE (2) Darlington (3)Switching


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PDF BU323A BU323A 204AA TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU323A equivalent automotive ignition tip162 BU108 2SA1046 BC337 rbe bc337 cross-reference 2SC190 replacement transistor BC337 BU326 TIP102 Darlington transistor
2001 - automotive ignition tip162

Abstract: BD390 cross reference BU108 bc337 cross-reference buv98a cross reference NSP2100 MJ1000 380 darlington to3 ibm TIP102 Darlington transistor Motorola MJ15022
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor , Reliability and Stability BASE COLLECTOR BU323AP DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details


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PDF BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 BD390 cross reference BU108 bc337 cross-reference buv98a cross reference NSP2100 MJ1000 380 darlington to3 ibm TIP102 Darlington transistor Motorola MJ15022
2001 - MJ11017 equivalent

Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Darlington Silicon Power Transistors . . , 1.16 Watts W/_C TJ, Tstg ­ 65 to + 175 ­ 65 to + 200 30 AMPERE DARLINGTON POWER TRANSISTORS , (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests performed w/special application simulator circuit , typ (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests performed w/special application simulator , ) Darlington (3)Switching tests performed w/special application simulator circuit. See data sheet for details


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PDF MJ11018, MJ11022, MJ11017 MJ11021* MJ11018* MJ11022 TIP73B TIP74 TIP74A TIP74B MJ11017 equivalent BU108 MJ11021 BU326 BU100 MJE3055T
2001 - transistor K 3596

Abstract: TIP-106 motorola power transistor to-126 2N6109 equivalent MJE3055 TO-126 BU326 BU108 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Plastic Darlington Complementary Silicon Power , DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ , MJF18009 MJF13009 (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests performed w/special application , MJE9780 0.3 typ 1 3 5 typ (1)|h | @ 1 MHz FE (2) Darlington (3)Switching tests performed w , MHz FE (2) Darlington (3)Switching tests performed w/special application simulator circuit. See data


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PDF MJE700 MJE800 T0220AB, MJE700T MJE800T MJE702 MJE703 MJE802 transistor K 3596 TIP-106 motorola power transistor to-126 2N6109 equivalent MJE3055 TO-126 BU326 BU108 BU100
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