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BD246 datasheet (76)

Part Manufacturer Description Type PDF
BD246 Bourns PNP SILICON POWER TRANSISTORS Original PDF
BD246 Power Innovations PNP SILICON POWER TRANSISTOR Original PDF
BD246 Others Shortform Transistor PDF Datasheet Scan PDF
BD246 Others Shortform Transistor PDF Datasheet Scan PDF
BD246 Others Transistor Replacements Scan PDF
BD246 Others Cross Reference Datasheet Scan PDF
BD246 Others Diode, Transistor, Thyristor Datasheets and more Scan PDF
BD246 Others Semiconductor Master Cross Reference Guide Scan PDF
BD246 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
BD246 Others Shortform Transistor Datasheet Guide Scan PDF
BD246 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
BD246 Texas Instruments The Power Semiconductor Data Book 1974 Scan PDF
BD246 Texas Instruments Discrete Devices 1978 Scan PDF
BD246 Texas Instruments Supply Division Product Catalogue 1978/79 Scan PDF
BD246 Transys Electronics BJT, PNP, Power Transistor, IC 10A Scan PDF
BD246 Transys Electronics PNP SILICON POWER TRANSISTORS Scan PDF
BD246A Bourns PNP SILICON POWER TRANSISTORS Original PDF
BD246A Power Innovations PNP SILICON POWER TRANSISTOR Original PDF
BD246A Others Shortform Transistor PDF Datasheet Scan PDF
BD246A Others Shortform Transistor PDF Datasheet Scan PDF

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BD246

Abstract: transistor BD245 b0246 BD246C BD245 BD246A BD246B
Text: TRANSYS ELECTRONICS LIMITED BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS â , Collector-emitter voltage (RBE = 100 Q) BD246 BD246A BD246B BD246C vcer -55 -70 -90 -115 V Collector-emitter voltage (lc = -30 mA) BD246 BD246A BD246B BD246C vceo -45 -60 -80 -100 V Emitter-base voltage vebo -5 V , . BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case , COLLECTOR CURRENT tcs634ac -1-0 . - Collector Current - A Figure 3. BD246 , BD246A , BD246B , BD246C PNP


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PDF BD246, BD246A, BD246B, BD246C BD245 OT-93 BD246 BD246A BD246B BD246C transistor BD245 b0246
BD246

Abstract: BD245 BD246C BD246 EQUIVALENT BD246A BD246B transistor BD245
Text: BD246A BD246B BD246C BD246 BD246A BD246B BD246C Emitter-Base Voltage IC Value IC ICM , VCE = -70 V , VBE = 0 BD246A VCE = -90 V , VBE = 0 BD246B VCE = -115 V , VBE = 0 ICES BD246 BD246C BD246 BD246A BD246B BD246C VCE = -30 V , IB = 0 ICEO Collector Cut-off , Base-Emitter Voltage(*) VE B = -5 V , IC = 0 IC = -30 mA, IB = 0 BD246 BD246A BD246B BD246C VCE = , BD246 , A, B, C PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS They are the power transistors


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PDF BD246, BD245, -30mA) BD246 BD246A BD246B BD246C BD246 BD245 BD246C BD246 EQUIVALENT BD246A BD246B transistor BD245
B0246

Abstract: B0-246 BD2468
Text: BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS Copyright © 19&7. Power Innovations , BD246C BD246 BD246A BD246B BD246C V CEO V ALUE -55 -70 Collector-emitter voltage (R8E = 100 Í2 , include testing ot all parameters. INNOVATIONS » 2-39 BD246 , BD246A , BD246B , BD246C PNP SILICON , = VCc * v" -5 V -4 V -4 V -4 V -0.3 A -2.5 A -4 V -4 V r =0 BD246A BD2468 BD246C BD246 BD246A , . BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS JUN E 1973 - REVISED M ARCH 1997 TYPICAL


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PDF BD246, BD246A, BD246B, BD246C BD245 OT-93 BD246 BD246A BD246B B0246 B0-246 BD2468
BD246

Abstract: BD246C BD246B bd245 BD246A
Text: ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE BD246 VCEO Collector-emitter voltage BD246A -70 BD246B -90 -115 BD246 Collector-base voltage -55 BD246C VCBO -45 BD246A BD246B Open base BD246C VEBO UNIT Emitter-base voltage -60 -80 V V -100 , BD246B -80 BD246C -100 VCEsat-1 Collector-emitter saturation voltage IC=-3A ;IB , SavantIC Semiconductor Product Specification BD246 /A/B/C Silicon PNP Power Transistors


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PDF BD246/A/B/C BD245/A/B/C BD246 BD246A BD246B BD246C BD246 BD246C BD246B bd245 BD246A
1973 - BD246c

Abstract: No abstract text available
Text: BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary , BD246C BD246 BD246A BD246B V CEO BD246C VEBO IC IB ICM Ptot Ptot Tj ½LIC2 Tstg TL PRODUCT , . BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case , -1.6 -3 V V IB = 0 BD246A BD246B BD246C BD246 BD246A BD246B BD246C BD246 /246A BD246B /246C MIN -45 -60 , . BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC


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PDF BD246, BD246A, BD246B, BD246C BD245 OT-93 BD246 BD246A BD246B C246C
1973 - BD246

Abstract: transistor BD245 BD245 BD246A BD246B BD246C
Text: BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD246 , BD246A , BD246B , BD246C , notice. BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS , change without notice. 3 BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS MAXIMUM , Operation -10 -1·0 -0·1 BD246 BD246A BD246B BD246C -0·01 -1·0 -10 -100 -1000


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PDF BD246, BD246A, BD246B, BD246C BD245 OT-93 BD246B BD246A BD246 transistor BD245 BD246A BD246B BD246C
1973 - BD246C

Abstract: BD246 BD246A transistor BD245 BD245 BD246B transistor bd246a
Text: BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD246 , BD246A , BD246B , BD246C , notice. BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS , change without notice. 3 BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS MAXIMUM , Operation -10 -1·0 -0·1 BD246 BD246A BD246B BD246C -0·01 -1·0 -10 -100 -1000


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PDF BD246, BD246A, BD246B, BD246C BD245 OT-93 BD246B BD246A BD246C BD246 BD246A transistor BD245 BD246B transistor bd246a
1973 - BD245

Abstract: transistor BD245 BD246C BD246 BD246A BD246B
Text: BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 , transistor parameters. PRODUCT 2 INFORMATION BD246 , BD246A , BD246B , BD246C PNP SILICON POWER , -1·0 -0·1 BD246 BD246A BD246B BD246C -0·01 -1·0 -10 -100 -1000 VCE - , mounting tab. PRODUCT MDXXAW INFORMATION 5 BD246 , BD246A , BD246B , BD246C PNP SILICON POWER


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PDF BD246, BD246A, BD246B, BD246C BD245 OT-93 BD246 BD246A BD246B transistor BD245 BD246C BD246 BD246A BD246B
BD246C

Abstract: transistor BD245
Text: BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power , BD246B BD246C BD246 V Collector-em itter voltage (lc = -30 mA) BD246A BD246B BD246C V CEO , not necessarily include testing of all parameters. BD246 , BD246A , BD246B , BD246C PNP SILICON POWER , BD246A BD246B BD246C V o o o o V BE = 0 V BE = 0 V BE = 0 V BE = 0 lB = 0 lB = 0 II _o BD246 , parameters. PRODUCT I N F O R M A T I O N 2 BD246 , BD246A , BD246B , BD246C PNP SILICON POWER


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PDF BD246, BD246A, BD246B, BD246C BD245 OT-93 BD246 BD246A BD246B transistor BD245
1973 - bd246c

Abstract: bd246
Text: BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS Designed for Complementary , noted) RATING BD246 Collector-emitter voltage (RBE = 100 ) BD246A BD246B BD246C BD246 Collector-emitter , without notice. BD246 , BD246A , BD246B , BD246C PNP SILICON POWER TRANSISTORS electrical , ) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 20 3 -1 -4 -1.6 -3 V V IB = 0 BD246A BD246B BD246C BD246 BD246A , SEPTEMBER 2002 Specifications are subject to change without notice. BD246 , BD246A , BD246B , BD246C PNP


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PDF BD246, BD246A, BD246B, BD246C BD245 global/pdfs/TSP1203 OT-93 BD246 BD246A BD246B
BD250

Abstract: bd249 BD246 BD250C BD250B BD250A BD246C BD246B BD246A BD249 EQUIVALENT
Text: (Ta= ) SYMBOL PARAMETER CONDITIONS BD246 VCBO Collector-base voltage BD246A BD246B VALUE -55 Collector emitter -70 -90 BD246C Collector-emitter voltage -45 BD246A BD246B Open base BD246C VEBO V -115 BD246 VCEO UNIT Emitter-base voltage -60


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PDF BD250/A/B/C BD249/A/B/C BD246 BD246A BD246B BD246C BD250 bd249 BD246 BD250C BD250B BD250A BD246C BD246B BD246A BD249 EQUIVALENT
tip 420 transistor

Abstract: BD246 TEXAS INSTRUMENTS transistor BD246 transistor tip 420 BD246 BD245A.C BD246C TIP 34 pnp transistor BD 246 b transistor BD 246
Text:  BD246 , BD246A , BD246B , BD246C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS , : Supplementary data may be published at a later date. 2-52 Texas Instruments BD246 , BD246A , BD246B , BD246C electrical characteristics at 25 °C case temperature PARAMETER TEST CONDITIONS BD246 B024GA BD246B BD246C , -% \ r " V 2-52 Texas Instruments BD246 , BD246A , BD246B , BD246C vCER = »(Rbe); 'C -30mA "be hFE = , (unless otherwise noted) BD246 BD246A BD246B Collector-Emitter Voltage (Rbe = 10012).-55 V -70


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PDF BD246, BD246A, BD246B, BD246C BD245A-C BD246 BD246A BD246B 40PEP 80PEP tip 420 transistor BD246 TEXAS INSTRUMENTS transistor BD246 transistor tip 420 BD245A.C BD246C TIP 34 pnp transistor BD 246 b transistor BD 246
BC125

Abstract: BD250 BD246C BD246 BD249 BD246 EQUIVALENT BD246A BD246B BD250A BD250B
Text: (Ta=) SYMBOL PARAMETER CONDITIONS VALUE TOR UC BD246 VCBO -55 BD246A Collector-base voltage OND IC Collector emitter BD246B SEM GE BD246C VCEO VEBO HAN C IN Collector-emitter voltage UNIT BD246 BD246A -70 V -90 -115 -45 -60 Open base V BD246B -80 BD246C -100 Emitter-base voltage Open


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PDF BD250/A/B/C BD249/A/B/C BD246 BD246A BD246B BD246C BD250/250A BD250B/250C BC125 BD250 BD246C BD246 BD249 BD246 EQUIVALENT BD246A BD246B BD250A BD250B
BD245C

Abstract: bd245 BD245B BD245A
Text: SavantIC Semiconductor Product Specification BD245/A/B/C Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD246 /A/B/C APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS BD245 VCBO Collector-base voltage BD245A


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PDF BD245/A/B/C BD246/A/B/C BD245 BD245A BD245B BD245C BD245C bd245 BD245B BD245A
transistor BD245

Abstract: BD245C BD245 BD245A BD245 transistor BD245B BD246 EQUIVALENT NPN Transistor VCEO 80V 100V NPN Transistor 10A 70V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION ·Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246 /A/B/C APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE BD245 VEBO Collector-Emitter Voltage


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PDF BD245/A/B/C BD245; BD245A BD245B; BD245C BD246/A/B/C BD245 BD245B transistor BD245 BD245C BD245 BD245A BD245 transistor BD245B BD246 EQUIVALENT NPN Transistor VCEO 80V 100V NPN Transistor 10A 70V
Not Available

Abstract: No abstract text available
Text: BD245B BD245C BD246 BD246A NPN NPN NPN PNP PNP SOT 9 3 SOT 93 SOT93 SOT 9 3 SOT 9 3 , /1 4/1 80 80 80 80 80 BD246B BD246C BD249 BD249A BD249B PNP PNP NPN NPN NPN


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PDF BD234 BD235 BD236 BD237 BD238 T0126
R3381

Abstract: R3498 a101 transistor R3381-S BDW85-S buv49 transistor 1015 TIPL763 883 transistor TIC263D
Text: Sold BD245 BD245A BD245A-S BD245B BD245B-S BD245C BD245C-S BD245-S BD246 BD246A BD246A-S BD246B BD246B-S BD246C BD246C-S BD246-S BD249 BD249A BD249A-S BD249B BD249B-S BD249C


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PDF OT-93 BLBF40 MP150SG, MG15G-1040R, cusV47-S BUV48 BUV48A BUV48A-S R3381 R3498 a101 transistor R3381-S BDW85-S buv49 transistor 1015 TIPL763 883 transistor TIC263D
BD245C

Abstract: bd245 transistor BD245 b0245c BD245A
Text: BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Copyright © 1997. Power Innovations Limited. UK JUNE 1973 - REVISED MARCH 1997 · · · · · Designed for Complementary Use with the BD246 Series 80 W at 25'C Case Temperature B C SOT-93 PACKAGE (TOP VIEW) 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available E C Pin 2 is in electrical contact with the m ounting base. c Ç absolute maximum ratings at 25°C case temperature (unless


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PDF BD245, BD245A, BD245B, BD245C BD246 OT-93 8D245 BD245A BD245B bd245 transistor BD245 b0245c
1973 - transistor BD245

Abstract: BD245C BD245B BD245 BD245A
Text: BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD246 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available This model is currently available, but not recommended for new designs. For more information, see http://bourns.com/data/ global/pdfs/TSP1203_SOT93_POM.pdf. SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with


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PDF BD245, BD245A, BD245B, BD245C BD246 global/pdfs/TSP1203 OT-93 BD245 BD245A BD245B transistor BD245
r3381

Abstract: R3498 buv49 MP150s tipl763 TIC263M BDW85-S transistor BD245 BD250C-S buv48s
Text: BD245-S BD246 BD246A BD246A-S BD246B BD246B-S BD246C BD246C-S BD246-S BD249 BD249A BD249A-S


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PDF OT-93 BLBF40 MP150SG, MG15G-1040R, cusV47-S BUV48 BUV48A BUV48A-S r3381 R3498 buv49 MP150s tipl763 TIC263M BDW85-S transistor BD245 BD250C-S buv48s
1973 - BD245

Abstract: BD245C
Text: BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD246 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available C B SOT-93 PACKAGE (TOP VIEW) 1 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING BD245 Collector-emitter voltage (RBE = 100 ) BD245A


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PDF BD245, BD245A, BD245B, BD245C BD246 OT-93 BD245 BD245A BD245B
1973 - transistor BD245

Abstract: BD245A BD245 BD245 transistor BD245C BD245B BD246
Text: BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD246 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL


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PDF BD245, BD245A, BD245B, BD245C BD246 OT-93 BD245B BD245A transistor BD245 BD245A BD245 BD245 transistor BD245C BD245B
bd639

Abstract: bd640 BF467 B0239C B0250C B0544 bd639 npn BD546D BD243 b0546
Text: 20 — 3 20 — 3 20 — 3 20 — 10 2.5 4 10 2.5 4 10 2.5 4 10 2.5 4 3 3 3 3 BD246 BD246A B0246B BD246C PNP PNP PNP PNP 55 45 5 70 60 5 90 80 5 115 100 5 10 10 10 10 80 80 80 80 3 20 — 3 20 — 3 20 â


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PDF O-22OAB 0-25A B0239 BD239A BD239B B0239C BD240 BD240A BD240B BD240C bd639 bd640 BF467 B0250C B0544 bd639 npn BD546D BD243 b0546
bd5460

Abstract: B0243 BD250 B0245A BD239 BD545B 25CC BD239A BD239B BD239C
Text: 10 80 3 20 — 10 2.5 4 3 BD245C NPN 115 100 5 10 80 3 20 - 10 2.5 4 3 BD246 PNP 55 45 5 10 80 3 20 — 10 2.5 4 3 BD246A PNP 70 60 5 10 80 3 20 — 10 2.5 4 3 BD246B PNP 90 80 5 10 80 3 20 — 10 2.5 4 3 BD246C PNP 115 100 5 10 80 3 20 — 10 2.5 4 3 BD249 NPN 55 45 5 25 125 15 10 — 25 5.0 4 3


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PDF Tease-25-C BD239 BD239A BD239B BD239C BD240 BD240A BD240B BD240C BD241 bd5460 B0243 BD250 B0245A BD545B 25CC
1973 - transistor BD245

Abstract: BD245 BD245C BD245B BD245A BD246
Text: BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD246 Series 80 W at 25°C Case Temperature 10 A Continuous Collector Current 15 A Peak Collector Current Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL


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PDF BD245, BD245A, BD245B, BD245C BD246 OT-93 BD245B BD245A transistor BD245 BD245 BD245C BD245B BD245A
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