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BD244C ON Semiconductor 6.0 A, 100 V PNP Bipolar Power Transistor, 1200-BLKBG
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BD244C datasheet (52)

Part Manufacturer Description Type PDF
BD244C Bourns PNP SILICON POWER TRANSISTORS Original PDF
BD244C Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Original PDF
BD244C Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
BD244C Motorola Complementary Silicon Plastic Power Transistors Original PDF
BD244C On Semiconductor Complementary Silicon Plastic Power Transistors Original PDF
BD244C Philips Semiconductors Silicon Epitaxial Base Power Transistors Original PDF
BD244C Power Innovations PNP SILICON POWER TRANSISTORS Original PDF
BD244C STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS Original PDF
BD244C STMicroelectronics Complementary power transistors Original PDF
BD244C USHA PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. Original PDF
BD244C Boca Semiconductor COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS Scan PDF
BD244C Continental Device India NPN PLASTIC POWER TRANSISTORS / PNP PLASTIC POWER TRANSISTORS Scan PDF
BD244C Continental Device India Semiconductor Device Data Book 1996 Scan PDF
BD244C Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan PDF
BD244C Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
BD244C Ferranti Semiconductors Power Transistors 1977 Scan PDF
BD244C General Electric Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 65W. Scan PDF
BD244C Mospec Complementary Silicon Plastic Power Transistor Scan PDF
BD244C Mospec POWER TRANSISTORS(6A,65W) Scan PDF
BD244C Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF

BD244C Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - bd243c

Abstract: bd244c
Text: coupled with very low saturation voltage. The PNP type is BD244C. Table 1. 2 3 TO , BD243C BD244C Complementary power transistors Features s . Complementary NPN-PNP devices , Packaging BD243C BD244C BD243C BD244C TO-220 Tube July 2007 Rev 5 1/10 www.st.com 10 Absolute maximum ratings 1 BD243C BD244C Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value BD243C (NPN) Unit BD244C (PNP) VCBO


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PDF BD243C BD244C BD244C. O-220 BD243C bd244c
1973 - bd244

Abstract: TRANSISTOR BD244
Text: BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , „¦) BD244A BD244B VALUE -55 VCER -70 -115 BD244 -45 BD244A BD244B V CEO BD244C Emitter-base voltage V -90 BD244C Collector-emitter voltage (IC = -30 mA) UNIT -60 V , without notice. 1 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS electrical , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C


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PDF BD244, BD244A, BD244B, BD244C BD243 O-220 BD244 BD244A BD244B bd244 TRANSISTOR BD244
2006 - bd244c

Abstract: BD243B 1N5825 BD243BG BD243C BD243CG BD244B MSD6100
Text: ORDERING INFORMATION Device BD243B BD243BG BD243C BD243CG BD244B BD244BG BD244C BD244CG Package , BD243B, BD243C* (NPN) BD244B, BD244C * (PNP) BD243C and BD244C are Preferred Devices , ) - BD243B, BD244B = 100 Vdc (Min) - BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 , Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO Collector-Base Voltage Value Unit 1 VCB BD243B, BD244B BD243C, BD244C Emitter-Base Voltage TO-220AB CASE 221A-09 STYLE 1 Vdc


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PDF BD243B, BD243C* BD244B, BD244C* BD243C BD244C BD244B BD243C, BD244C BD243B 1N5825 BD243BG BD243CG BD244B MSD6100
2007 - Not Available

Abstract: No abstract text available
Text: saturation voltage. The PNP type is BD244C. let o Figure 1. )(s Internal schematic diagram , BD243C BD244C Complementary power transistors Features ■. Complementary NPN-PNP , Marking Package Packaging BD243C BD244C BD243C BD244C TO-220 Tube July 2007 Rev 5 1/10 www.st.com 10 Absolute maximum ratings 1 BD243C BD244C Absolute maximum , BD244C (PNP) VCBO Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage


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PDF BD243C BD244C O-220 BD244C.
2007 - BD244C

Abstract: BD243C npn transistor bd243c complementary npn-pnp power transistors st bd243c JESD97 Transistor bd243c st bd244c morocco bd244c
Text: coupled with very low saturation voltage. The PNP type is BD244C. Table 1. 2 3 TO , BD243C BD244C Complementary power transistors Features . Complementary NPN-PNP devices , Packaging BD243C BD244C BD243C BD244C TO-220 Tube July 2007 Rev 5 1/10 www.st.com 10 Absolute maximum ratings 1 BD243C BD244C Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value BD243C (NPN) Unit BD244C (PNP) VCBO


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PDF BD243C BD244C BD244C. O-220 BD243C BD244C npn transistor bd243c complementary npn-pnp power transistors st bd243c JESD97 Transistor bd243c st bd244c morocco bd244c
1973 - BD243

Abstract: BD244 BD244A BD244B BD244C
Text: BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , Collector-emitter voltage (IC = -30 mA) UNIT -55 BD244C BD244A VALUE -45 VCEO BD244C -60 V , BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C , BD244C -0.4 Collector cut-off VCE = -30 V IB = 0 BD244/244A -0.7 current V CE =


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PDF BD244, BD244A, BD244B, BD244C BD243 O-220 BD244 BD244A BD244B BD244 BD244A BD244B BD244C
2005 - BD243C

Abstract: BD244C JESD97 Transistor bd243c
Text: complementary PNP type is BD244C. Internal Schematic Diagram Order Codes Part Number Marking Package Packing BD243C BD243C TO-220 TUBE BD244C BD244C TO-220 TUBE September 2005 Rev 4 1/8 www.st.com 8 BD243C - BD244C 1 Absolute Maximum Ratings 1 , BD243C BD244C COMPLEMENTARY SILICON POWER TRANSISTOR Features STmicroelectronics PREFERRED , (NPN) Unit BD244C (PNP) VCBO Collector-Base Voltage (IE = 0) 100 V VCEO


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PDF BD243C BD244C O-220 BD243C O-220 BD244C. BD244C JESD97 Transistor bd243c
BD244

Abstract: b0244c BD243 B0244A BD244A BD244B BD244C
Text: BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS • Designed for Complementary Use , 100 Q) BD244 BD244A BD244B BD244C VCER -55 -70 -90 -115 V Collector-emitter voltage (lc = -30 mA) BD244 BD244A BD244B BD244C VCEO -45 -60 -80 -100 V Emitter-base voltage VEBO -5 V Continuous , LIMITED BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS electrical characteristics at 25 , Collector-emitter breakdown voltage lc = -30 mA (see Note 5) lB = 0 BD244A BD244B BD244C -60 -80 -100 V VCE


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PDF BD244, BD244A, BD244B, BD244C BD243 O-220 BD244 BD244A BD244B BD244C b0244c B0244A
BD244C

Abstract: D243B transistor c 3181 IC 3180 BD243C D243C
Text: 80 Vdc (Min) - BD243B, BD244B = 100 Vdc (Min) - BD243C, BD244C · High Current Gain Bandwidth , Range Symbol VCEO VCB VEB BD243B BD243C* PNP BD244B BD244C * ·Motorola Preferred Dtvie* NPN BD243B BD244B 80 80 5.0 6 10 2.0 BD243C BD244C 100 100 Unit Vdc Vdc Vdc Adc 6 AMPERE POWER , D244B BD244C ELECTRICAL CHARACTERISTICS (T c - 25°C unless otherwise noted) Characteristic Collector-Emltter Sustaining Voltage (1) (IC - 30 mAdc, I b - 0) BD243B, BD244B BD243C, BD244C 'CEO BD243B, BD243C


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PDF BD243B, BD244B BD243C, BD244C O-220 BD244C D243B transistor c 3181 IC 3180 BD243C D243C
1973 - bd244

Abstract: BD243 BD244A BD244B BD244C
Text: BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD244B VCER -70 BD244C -115 -45 BD244A BD244B V CEO -60 V -80 -100 BD244C VEBO Emitter-base voltage Continuous collector current Peak , subject to change without notice. 1 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C


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PDF BD244, BD244A, BD244B, BD244C BD243 O-220 BD244B BD244A bd244 BD244A BD244B BD244C
bd243c

Abstract: Transistor bd243c bd244c
Text: BD243C, BD244C High Current Gain Bandwidth Product f j = 3.0 MHz (Min) @ Iq = 500 mAdc Compact T 0 -2 2 0 AB Package BD243B BD243C* BD244B BD244C * ` Motorola Preferred Device NPN PNP · · MAXIMUM , BD243C BD244C 100 100 Unit Vdc Vdc Vdc Ade 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 8 , , Inc. 1995 ftf) M O T O R O L A BD243B BD243C BD244B BD244C ELECTRICAL CHARACTERISTICS (T q = 2 , m A d c , I b = 0) BD243B, BD244B BD243C, BD244C 'CEO BD243B, BD243C, BD244B, BD244C Ic e s BD243B


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PDF BD243B/D BD243B, BD244B BD243C, BD244C BD243B BD243C* BD244B BD244C* 21A-06 bd243c Transistor bd243c
1973 - TRANSISTOR BD244

Abstract: No abstract text available
Text: BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , BD244C BD244 Collector-emitter voltage (IC = -30 mA) Emitter-base voltage Continuous collector current BD244A BD244B BD244C UNIT -55 E T E L O S B O BD244B VALUE V CEO , change without notice. 1 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS electrical , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C


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PDF BD244, BD244A, BD244B, BD244C BD243 O-220 BD244 BD244A TRANSISTOR BD244
2001 - 1N5825

Abstract: BD243B BD243C BD244B BD244C MSD6100
Text: · Collector ­ Emitter Saturation Voltage - BD244C * VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc , Vdc (Min) - BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD243B BD244B BD243C BD244C Unit VCEO 80 100 Vdc , /D BD243B BD243C BD244B BD244C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î Î Î , BD243C, BD244C Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICEO Unit Vdc mAdc BD243B


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PDF BD243B BD243C BD244B BD244C BD243B, BD243C, r14525 BD243B/D 1N5825 BD243B BD243C BD244B BD244C MSD6100
2007 - 1N5825

Abstract: BD243B BD243BG BD243C BD243CG BD244B BD244C MSD6100 BD243C APPLICATION
Text: BD244C BD244CG Package Shipping TO-220 TO-220 (Pb-Free) 50 Units / Rail TO-220 TO , BD243B, BD243C* (NPN) BD244B, BD244C * (PNP) BD243C and BD244C are Preferred Devices , 100 Vdc (Min) - BD243C, BD244C ·High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 , Voltage BD243B, BD244B BD243C, BD244C VCEO Collector-Base Voltage Value Unit 1 VCB BD243B, BD244B BD243C, BD244C Emitter-Base Voltage TO-220AB CASE 221A-09 STYLE 1 Vdc 80 100


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PDF BD243B, BD243C* BD244B, BD244C* BD243C BD244C BD244B BD243C, BD244C 1N5825 BD243B BD243BG BD243CG BD244B MSD6100 BD243C APPLICATION
1973 - Not Available

Abstract: No abstract text available
Text: BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , -60 -100 -5 -6 -3 2 -80 V CEO VEBO ICM Ptot ½LIC2 Tstg TL Tj Ptot IB IC V V A A A -90 V UNIT BD244C Collector-emitter voltage (IC = -30 mA) Emitter-base voltage BD244A BD244 BD244B BD244C BD244B , change without notice. 1 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS electrical , = 1 kHz f = 1 MHz 20 3 30 15 -1.5 -2 V V IB = 0 BD244A BD244B BD244C BD244 BD244A BD244B BD244C


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PDF BD244, BD244A, BD244B, BD244C BD243 O-220 BD244A BD244
2011 - Not Available

Abstract: No abstract text available
Text: BD243CG BD244B BD244BG BD244C BD244CG Package Shipping†TO−220 TO−220 (Pb−Free , BD243B, BD243C (NPN) BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These , ˆ’ BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Pb−Free , BD243C, BD244C VCEO Collector−Base Voltage BD243B, BD244B BD243C, BD244C Emitter−Base , Vdc, IB = 0) BD243B, BD244B BD243C, BD244C BD243B, BD243C, BD244B, BD244C BD243B, BD244B


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PDF BD243B, BD243C BD244B, BD244C BD244B BD243C,
2013 - Not Available

Abstract: No abstract text available
Text: BD243B, BD243C (NPN), BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These , * MAXIMUM RATINGS Rating Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C Collector-Base Voltage BD243B, BD244B BD243C, BD244C Emitter-Base Voltage Collector Current - Continuous Collector Current - , -220 (Pb-Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail BD244CG 1 September, 2013 - Rev. 14 Publication Order Number: BD243B/D BD243B, BD243C (NPN), BD244B, BD244C


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PDF BD243B, BD243C BD244B, BD244C BD244B BD243C, BD244C
1973 - BD243

Abstract: BD244 BD244A BD244B BD244C
Text: BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD244B VCER -70 BD244C -115 -45 BD244A BD244B V CEO -60 V -80 -100 BD244C VEBO Emitter-base voltage Continuous collector current Peak , subject to change without notice. 1 BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C


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PDF BD244, BD244A, BD244B, BD244C BD243 O-220 BD244B BD244A BD244 BD244A BD244B BD244C
2002 - 1N5825

Abstract: BD243B BD243C BD244B BD244C MSD6100
Text: · Collector ­ Emitter Saturation Voltage - BD244C * VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc , Vdc (Min) - BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD243B BD244B BD243C BD244C Unit VCEO 80 100 Vdc , : BD243B/D BD243B BD243C BD244B BD244C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î Î , mAdc, IB = 0) mAdc Min Unit - - VCEO(sus) BD243B, BD244B BD243B BD243C, BD244C


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PDF BD243B BD243C BD244B BD244C BD243B, BD243C, r14525 BD243B/D 1N5825 BD243B BD243C BD244B BD244C MSD6100
2011 - BD243CG

Abstract: WT1D
Text: BD243B BD243BG BD243C BD243CG BD244B BD244BG BD244C BD244CG Package TO-220 TO-220 (Pb-Free) TO-220 TO , BD243B, BD243C (NPN) BD244B, BD244C (PNP) Complementary Silicon Plastic Power Transistors These , BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Pb-Free Packages , RATINGS Rating Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C Collector-Base Voltage BD243B, BD244B BD243C, BD244C Symbol VCEO Value 80 100 80 100 5.0 6 10 2.0 65 0.52 -65 to +150 Unit Vdc 1 Vdc 2 3


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PDF BD243B, BD243C BD244B, BD244C BD244B BD243C, BD244C BD244B BD243CG WT1D
1999 - BD243C

Abstract: BD244C BD243B BD244B DSA0082460 morocco bd244c
Text: BD243B/BD243C BD244B/ BD244C ® COMPLEMENTARY SILICON POWER TRANSISTORS s , switching applications. The complementary PNP types are BD244B and BD244C respectively. 1 2 3 , t NPN BD243B BD243C PNP BD244B BD244C 100 V 100 V V CBO , / BD244B / BD244C THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal , ition s I C = 30 mA for BD243B/BD244B for BD243C/ BD244C Collector-Emitter Saturation Voltage


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PDF BD243B/BD243C BD244B/BD244C BD243B BD243C O-220 BD244B BD244C O-220 BD243B BD243C DSA0082460 morocco bd244c
1995 - 1N5825

Abstract: BD243B BD243C BD244B BD244C MSD6100
Text: to + 150 CASE 221A­06 TO­220AB W/_C _C Symbol BD243B BD244B BD243C BD244C , , BD244B VCEO(sus) = 100 Vdc (Min) - BD243C, BD244C · High Current Gain Bandwidth Product fT = 3.0 MHz , * PNP BD244B BD244C * . . . designed for use in general purpose amplifier and switching applications , 0) (VCE = 100 Vdc, VEB = 0) BD243B, BD244B BD243C, BD244C mAdc ICES Collector Cutoff Current (VCE = 60 Vdc, IB = 0) µAdc BD243B, BD243C, BD244B, BD244C ICEO BD243B, BD244B


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PDF BD243B/D* BD243B/D 1N5825 BD243B BD243C BD244B BD244C MSD6100
bd 244c

Abstract: No abstract text available
Text: BD244, BD244A, BD244B. BD244C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , CoHector-emitter voltage (R qE = 100£ î ) BD244A BD244B BD244C BD 244 BD244A B0244B BD244C Emitter-base voitage , BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS JU N E 1973 - R E V IS E D M A R C H 1997 , BD244 BD244A BD244B BD244C BD244 BD244A 0D2448 BD244C BD244/244A BD244B/244C O o -45 -60 -100 -0.4 , . BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS JU N E 1973 - R E V IS E D M A R C H 1997


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PDF BD244, BD244A, BD244B. BD244C BD243 O-220 8D244 BD244A BD244B bd 244c
Not Available

Abstract: No abstract text available
Text: BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power , -115 -45 -60 UNIT BD244B BD244C BD244 V Collector-em itter voltage (lc = -30 mA) BD244A BD244B BD244C V CEO -80 -100 V Em itter-base voltage Continuous collector current Peak , BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 , Note 5) v ' V CE= -55 V -70 V -90 V lo = B 0 BD244A BD244B BD244C V o o o o V BE =


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PDF BD244, BD244A, BD244B, BD244C BD243 T0-220 BD244 BD244A BD244B
BD244C

Abstract: BD244 BD244B BD244A BD243 BD243C BD243B BD243A transistor bd244c BD243 transistor
Text: Rating Unit Collector-Emitter Voltage : BD244 Vobo - 45 V BD244A - 60 V BD244B - 80 V BD244C - 100 V Collector Emitter Voltage : BD244 Vceo - 45 V BD244A - 60 V BD244B - 80 V BD244C - , 80 V BD244C - 100 V Collector Cutoff Current : BD244/244A IcEO Vce = - 30V, lb = 0 - 0.7 , BD244C VCE=-100V, VBE=0 - 0.4 mA Emitter Cutoff Current Iebo Veb = - 5V, lc = 0 - 1 mA * DC


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PDF BD244/A/B/C BD243, BD243A, BD243B BD243C BD244 BD244A BD244B BD244C BD244C BD244 BD244B BD244A BD243 BD243A transistor bd244c BD243 transistor
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