The Datasheet Archive

Top Results (1)

Part Manufacturer Description Datasheet Download Buy Part
BD244B ON Semiconductor 6.0 A, 80 V PNP Bipolar Power Transistor, 1200-BLKBG
SF Impression Pixel

Search Stock (10)

  You can filter table by choosing multiple options from dropdownShowing 10 results of 10
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BD244B Fairchild Semiconductor Corporation Rochester Electronics 6,715 $0.25 $0.21
BD244B Harris Semiconductor Rochester Electronics 271 $1.05 $0.85
BD244BG ON Semiconductor Rochester Electronics 7,956 $0.60 $0.49
BD244BG ON Semiconductor Chip1Stop 850 $0.59 $0.46
BD244BG ON Semiconductor Chip1Stop 31 $0.59 $0.59
BD244BTU ON Semiconductor Avnet - $0.50 $0.41
BD244BTU ON Semiconductor Avnet - - -
BD244BTU Fairchild Semiconductor Corporation Rochester Electronics 150 $0.51 $0.41
BD244BTU Fairchild Semiconductor Corporation ComS.I.T. 1,100 - -
BD244BTU Fairchild Semiconductor Corporation New Advantage Corporation 900 $0.46 $0.42

No Results Found

Show More

BD244B datasheet (50)

Part Manufacturer Description Type PDF
BD244B Bourns PNP SILICON POWER TRANSISTORS Original PDF
BD244B Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Original PDF
BD244B Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
BD244B Motorola Complementary Silicon Plastic Power Transistors Original PDF
BD244B On Semiconductor Complementary Silicon Plastic Power Transistors Original PDF
BD244B Philips Semiconductors Silicon Epitaxial Base Power Transistors Original PDF
BD244B Power Innovations PNP SILICON POWER TRANSISTORS Original PDF
BD244B STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS Original PDF
BD244B USHA PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. Original PDF
BD244B Boca Semiconductor COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS Scan PDF
BD244B Continental Device India NPN PLASTIC POWER TRANSISTORS / PNP PLASTIC POWER TRANSISTORS Scan PDF
BD244B Continental Device India Semiconductor Device Data Book 1996 Scan PDF
BD244B Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan PDF
BD244B Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
BD244B Ferranti Semiconductors Power Transistors 1977 Scan PDF
BD244B General Electric Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 65W. Scan PDF
BD244B Mospec POWER TRANSISTORS(6A,65W) Scan PDF
BD244B Mospec Complementary Silicon Plastic Power Transistor Scan PDF
BD244B Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
BD244B Motorola European Master Selection Guide 1986 Scan PDF

BD244B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1973 - bd244

Abstract: TRANSISTOR BD244
Text: BD244, BD244A, BD244B , BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , „¦) BD244A BD244B VALUE -55 VCER -70 -115 BD244 -45 BD244A BD244B V CEO BD244C , without notice. 1 BD244, BD244A, BD244B , BD244C PNP SILICON POWER TRANSISTORS electrical , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C , current VCE = -90 V VBE = 0 BD244B -0.4 VCE = -115 V ICES UNIT -45 VBE = 0


Original
PDF BD244, BD244A, BD244B, BD244C BD243 O-220 BD244 BD244A BD244B bd244 TRANSISTOR BD244
2006 - bd244c

Abstract: BD243B 1N5825 BD243BG BD243C BD243CG BD244B MSD6100
Text: ORDERING INFORMATION Device BD243B BD243BG BD243C BD243CG BD244B BD244BG BD244C BD244CG Package , BD243B, BD243C* (NPN) BD244B , BD244C* (PNP) BD243C and BD244C are Preferred Devices , ) - BD243B, BD244B = 100 Vdc (Min) - BD243C, BD244C High Current Gain Bandwidth Product fT = 3.0 , Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO Collector-Base Voltage Value Unit 1 VCB BD243B, BD244B BD243C, BD244C Emitter-Base Voltage TO-220AB CASE 221A-09 STYLE 1 Vdc


Original
PDF BD243B, BD243C* BD244B, BD244C* BD243C BD244C BD244B BD243C, BD244C BD243B 1N5825 BD243BG BD243CG BD244B MSD6100
1973 - BD243

Abstract: BD244 BD244A BD244B BD244C
Text: BD244, BD244A, BD244B , BD244C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , Collector-emitter voltage (RBE = 100 ) BD244A BD244B VCER BD244B -70 V -90 -115 BD244 , BD244, BD244A, BD244B , BD244C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C , V CE = -70 V V BE = 0 BD244A -0.4 cut-off current V CE = -90 V V BE = 0 BD244B


Original
PDF BD244, BD244A, BD244B, BD244C BD243 O-220 BD244 BD244A BD244B BD244 BD244A BD244B BD244C
bd243c

Abstract: Transistor bd243c bd244c
Text: Collector Emitter Sustaining Voltage - V cE O (sus) = 80 Vdc (Min) - BD243B, BD244B = 100 Vdc (Min) - , AB Package BD243B BD243C* BD244B BD244C* ` Motorola Preferred Device NPN PNP · · MAXIMUM , perating and Storage Junction Temperature Range Symbol VCEO VCB Veb BD243B BD244B 80 80 5.0 , , Inc. 1995 ftf) M O T O R O L A BD243B BD243C BD244B BD244C ELECTRICAL CHARACTERISTICS (T q = 2 , m A d c , I b = 0) BD243B, BD244B BD243C, BD244C 'CEO BD243B, BD243C, BD244B , BD244C Ic e s BD243B


OCR Scan
PDF BD243B/D BD243B, BD244B BD243C, BD244C BD243B BD243C* BD244B BD244C* 21A-06 bd243c Transistor bd243c
1973 - Not Available

Abstract: No abstract text available
Text: BD244, BD244A, BD244B , BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , Collector-emitter voltage (IC = -30 mA) Emitter-base voltage BD244A BD244 BD244B BD244C BD244B , change without notice. 1 BD244, BD244A, BD244B , BD244C PNP SILICON POWER TRANSISTORS electrical , = 1 kHz f = 1 MHz 20 3 30 15 -1.5 -2 V V IB = 0 BD244A BD244B BD244C BD244 BD244A BD244B BD244C BD244/244A BD244B /244C MIN -45 -60 -80 -100 -0.4 -0.4 -0.4 -0.4 -0.7 -0.7 -1 mA mA mA V TYP MAX UNIT


Original
PDF BD244, BD244A, BD244B, BD244C BD243 O-220 BD244A BD244
BD244

Abstract: b0244c BD243 B0244A BD244A BD244B BD244C
Text: BD244, BD244A, BD244B , BD244C PNP SILICON POWER TRANSISTORS • Designed for Complementary Use , 100 Q) BD244 BD244A BD244B BD244C VCER -55 -70 -90 -115 V Collector-emitter voltage (lc = -30 mA) BD244 BD244A BD244B BD244C VCEO -45 -60 -80 -100 V Emitter-base voltage VEBO -5 V Continuous , LIMITED BD244, BD244A, BD244B , BD244C PNP SILICON POWER TRANSISTORS electrical characteristics at 25 , Collector-emitter breakdown voltage lc = -30 mA (see Note 5) lB = 0 BD244A BD244B BD244C -60 -80 -100 V VCE


OCR Scan
PDF BD244, BD244A, BD244B, BD244C BD243 O-220 BD244 BD244A BD244B BD244C b0244c B0244A
1973 - bd244

Abstract: BD243 BD244A BD244B BD244C
Text: BD244, BD244A, BD244B , BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD244B VCER -70 BD244C -115 -45 BD244A BD244B V CEO , subject to change without notice. 1 BD244, BD244A, BD244B , BD244C PNP SILICON POWER TRANSISTORS , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C , current VCE = -90 V VBE = 0 BD244B -0.4 VCE = -115 V ICES UNIT -45 VBE = 0


Original
PDF BD244, BD244A, BD244B, BD244C BD243 O-220 BD244B BD244A bd244 BD244A BD244B BD244C
BD244C

Abstract: BD244 BD244B BD244A BD243 BD243C BD243B BD243A transistor bd244c BD243 transistor
Text: Rating Unit Collector-Emitter Voltage : BD244 Vobo - 45 V BD244A - 60 V BD244B - 80 V BD244C - 100 V Collector Emitter Voltage : BD244 Vceo - 45 V BD244A - 60 V BD244B - 80 V BD244C - , Emitter Sustaining Voltage : BD244 Vceo(sus) lc=- 30mA, lb= 0 - 45 V BD244A - 60 V BD244B - , mA : BD244B /244C Vce= - 60V, lb=0 - 0.7 mA Collector Cutoff Current : BD244 Ices Vce = - 45V, Vbe = 0 - 0.4 mA BD244A Vce = - 60V, Vbe = 0 - 0.4 mA BD244B Vce =-80V, Vbe =0 - 0.4 mA


OCR Scan
PDF BD244/A/B/C BD243, BD243A, BD243B BD243C BD244 BD244A BD244B BD244C BD244C BD244 BD244B BD244A BD243 BD243A transistor bd244c BD243 transistor
2011 - BD243CG

Abstract: WT1D
Text: BD243B BD243BG BD243C BD243CG BD244B BD244BG BD244C BD244CG Package TO-220 TO-220 (Pb-Free) TO-220 TO , BD243B, BD243C (NPN) BD244B , BD244C (PNP) Complementary Silicon Plastic Power Transistors These , (sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B = 100 Vdc (Min) - , RATINGS Rating Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C Collector-Base Voltage BD243B, BD244B BD243C, BD244C Symbol VCEO Value 80 100 80 100 5.0 6 10 2.0 65 0.52 -65 to +150 Unit Vdc 1 Vdc 2 3


Original
PDF BD243B, BD243C BD244B, BD244C BD244B BD243C, BD244C BD244B BD243CG WT1D
Not Available

Abstract: No abstract text available
Text: BD244, BD244A, BD244B , BD244C PNP SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power , -115 -45 -60 UNIT BD244B BD244C BD244 V Collector-em itter voltage (lc = -30 mA) BD244A BD244B BD244C V CEO -80 -100 V Em itter-base voltage Continuous collector current Peak , BD244, BD244A, BD244B , BD244C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 , Note 5) v ' V CE= -55 V -70 V -90 V lo = B 0 BD244A BD244B BD244C V o o o o V BE =


OCR Scan
PDF BD244, BD244A, BD244B, BD244C BD243 T0-220 BD244 BD244A BD244B
BD244B

Abstract: No abstract text available
Text: r z 7 S GS-TH O M S O N Ä T # Kl(g«LiM(s)!0(gS BD243B/C BD244B /C COMPLEMENTARY SILICON POWER , linear and switching applications. The complementary PNP types are BD244B and BD244C respectively , Param eter NPN PNP V CBO V CEO V ebo lc IC M Ib Value BD243B BD244B 80 80 5 6 10 2 65 -65 to 150 150 , M arch 1 9 9 7 BD243B/C BD244B /C THERMAL DATA Rlh]-case Rl h] - amb Therm al Therm al , rated V ceo Ic e o fo r B D243B/ BD244B fo r BD243C /B D244C Veb = E E < Ie b o 5


OCR Scan
PDF BD243B/C BD244B/C BD243B BD243C O-220 BD244B BD244C
1973 - TRANSISTOR BD244

Abstract: No abstract text available
Text: BD244, BD244A, BD244B , BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , current BD244A BD244B BD244C UNIT -55 E T E L O S B O BD244B VALUE V CEO , change without notice. 1 BD244, BD244A, BD244B , BD244C PNP SILICON POWER TRANSISTORS electrical , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C , current VCE = -90 V VBE = 0 BD244B -0.4 VCE = -115 V ICES UNIT -45 VBE = 0


Original
PDF BD244, BD244A, BD244B, BD244C BD243 O-220 BD244 BD244A TRANSISTOR BD244
2013 - Not Available

Abstract: No abstract text available
Text: BD243B, BD243C (NPN), BD244B , BD244C (PNP) Complementary Silicon Plastic Power Transistors These , * MAXIMUM RATINGS Rating Collector-Emitter Voltage BD243B, BD244B BD243C, BD244C Collector-Base Voltage BD243B, BD244B BD243C, BD244C Emitter-Base Voltage Collector Current - Continuous Collector Current - , BD243BG BD243CG BD244BG *For additional information on our Pb-Free strategy and soldering details, please , September, 2013 - Rev. 14 Publication Order Number: BD243B/D BD243B, BD243C (NPN), BD244B , BD244C


Original
PDF BD243B, BD243C BD244B, BD244C BD244B BD243C, BD244C
2002 - 1N5825

Abstract: BD243B BD243C BD244B BD244C MSD6100
Text: * . . . designed for use in general purpose amplifier and switching applications. PNP BD244B , · Collector Emitter Sustaining Voltage - · · VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B = 100 , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD243B BD244B BD243C BD244C Unit VCEO 80 100 Vdc , : BD243B/D BD243B BD243C BD244B BD244C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î Î , mAdc, IB = 0) mAdc Min Unit - - VCEO(sus) BD243B, BD244B BD243B BD243C, BD244C


Original
PDF BD243B BD243C BD244B BD244C BD243B, BD243C, r14525 BD243B/D 1N5825 BD243B BD243C BD244B BD244C MSD6100
2001 - 1N5825

Abstract: BD243B BD243C BD244B BD244C MSD6100
Text: * . . . designed for use in general purpose amplifier and switching applications. PNP BD244B , · Collector Emitter Sustaining Voltage - · · VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B = 100 , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD243B BD244B BD243C BD244C Unit VCEO 80 100 Vdc , /D BD243B BD243C BD244B BD244C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î Î Î Î Î Î Î Î Î Î , Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) mAdc Min - - VCEO(sus) BD243B, BD244B BD243B


Original
PDF BD243B BD243C BD244B BD244C BD243B, BD243C, r14525 BD243B/D 1N5825 BD243B BD243C BD244B BD244C MSD6100
1973 - BD243

Abstract: BD244 BD244A BD244B BD244C
Text: BD244, BD244A, BD244B , BD244C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD244B VCER -70 BD244C -115 -45 BD244A BD244B V CEO , subject to change without notice. 1 BD244, BD244A, BD244B , BD244C PNP SILICON POWER TRANSISTORS , Collector-emitter breakdown voltage BD244A IB = 0 (see Note 5) MAX -60 BD244B -80 BD244C , current VCE = -90 V VBE = 0 BD244B -0.4 VCE = -115 V ICES UNIT -45 VBE = 0


Original
PDF BD244, BD244A, BD244B, BD244C BD243 O-220 BD244B BD244A BD244 BD244A BD244B BD244C
2011 - Not Available

Abstract: No abstract text available
Text: BD243CG BD244B BD244BG BD244C BD244CG Package Shipping†TO−220 TO−220 (Pb−Free , BD243B, BD243C (NPN) BD244B , BD244C (PNP) Complementary Silicon Plastic Power Transistors These , ˆ’ • • http://onsemi.com VCEO(sus) = 80 Vdc (Min) − BD243B, BD244B = 100 Vdc (Min) â , Packages are Available* MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO Collector−Base Voltage BD243B, BD244B BD243C, BD244C Emitter−Base


Original
PDF BD243B, BD243C BD244B, BD244C BD244B BD243C,
1999 - BD243C

Abstract: BD244C BD243B BD244B DSA0082460 morocco bd244c
Text: BD243B/BD243C BD244B /BD244C ® COMPLEMENTARY SILICON POWER TRANSISTORS s , switching applications. The complementary PNP types are BD244B and BD244C respectively. 1 2 3 , t NPN BD243B BD243C PNP BD244B BD244C 100 V 100 V V CBO , / BD244B / BD244C THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal , ition s I C = 30 mA for BD243B/ BD244B for BD243C/BD244C Collector-Emitter Saturation Voltage


Original
PDF BD243B/BD243C BD244B/BD244C BD243B BD243C O-220 BD244B BD244C O-220 BD243B BD243C DSA0082460 morocco bd244c
2007 - 1N5825

Abstract: BD243B BD243BG BD243C BD243CG BD244B BD244C MSD6100 BD243C APPLICATION
Text: Base-Emitter Resistance ORDERING INFORMATION Device BD243B BD243BG BD243C BD243CG BD244B BD244BG , BD243B, BD243C* (NPN) BD244B , BD244C* (PNP) BD243C and BD244C are Preferred Devices , ) @ IC = 6.0 Adc ·Collector Emitter Sustaining Voltage VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B = , Voltage BD243B, BD244B BD243C, BD244C VCEO Collector-Base Voltage Value Unit 1 VCB BD243B, BD244B BD243C, BD244C Emitter-Base Voltage TO-220AB CASE 221A-09 STYLE 1 Vdc 80 100


Original
PDF BD243B, BD243C* BD244B, BD244C* BD243C BD244C BD244B BD243C, BD244C 1N5825 BD243B BD243BG BD243CG BD244B MSD6100 BD243C APPLICATION
2002 - Not Available

Abstract: No abstract text available
Text: general purpose amplifier and switching applications. BD243B BD243C * BD244B BD244C * *ON , Sustaining Voltage - · · VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc VCEO(sus) = 80 Vdc (Min) - BD243B, BD244B , MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB BD243B BD244B 80 80 BD243C BD244C 100 100 Unit Vdc Vdc , ) BD243B, BD243B BD244B BD243C, BD244C ICEO ICES 0.7 mAdc µAdc BD243B, BD243C, BD244B , BD244C Collector , = 0) BD243B, BD244B BD243C, BD244C - - - 400 400 1.0 IEBO mAdc ON CHARACTERISTICS (1) DC Current


Original
PDF BD243B BD243C BD244B BD244C BD243B, BD244B BD243C, BD244C O-220
BD244

Abstract: BD244C BD244B BD244A BD243
Text: CONDITIONS BD244 VCBO Collector-base voltage BD244A VALUE -45 Open emitter -60 BD244B Collector-emitter voltage -100 BD244 -45 BD244A Open base -60 BD244B Emitter-base voltage , -45 BD244A -60 IC=-30mA; IB=0 V BD244B -80 BD244C VCEsat TYP. -100 , BD244/A VCE=-30V; IB=0 BD244B /C BD244 VCE=-45V; VBE=0 BD244A VCE=-60V; VBE=0 BD244B


Original
PDF BD244/A/B/C O-220C BD243/A/B/C BD244 BD244A BD244B BD244C BD244 BD244C BD244B BD244A BD243
BD244

Abstract: BD244C BD244A BD243 BD244B
Text: CONDITIONS BD244 Collector-base voltage -60 Open emitter V BD244B -80 BD244C -100 BD244 -45 BD244A VCEO Collector-emitter voltage -60 Open base V BD244B , -60 IC=-30mA; IB=0 V BD244B -80 BD244C VCEsat TYP. -45 BD244A VCEO(SUS) MIN , 1 mA BD244/A VCE=-30V; IB=0 BD244B /C BD244 VCE=-45V; VBE=0 BD244A VCE=-60V; VBE=0 BD244B VCE=-80V; VBE=0 BD244C ICES VCE=-60V; IB=0 VCE=-100V; VBE


Original
PDF BD244/A/B/C O-220C BD243/A/B/C BD244 BD244B BD244C BD244A BD244 BD244C BD244A BD243 BD244B
1995 - 1N5825

Abstract: BD243B BD243C BD244B BD244C MSD6100
Text: to + 150 CASE 221A­06 TO­220AB W/_C _C Symbol BD243B BD244B BD243C BD244C , , BD244B VCEO(sus) = 100 Vdc (Min) - BD243C, BD244C · High Current Gain Bandwidth Product fT = 3.0 MHz , * PNP BD244B BD244C* . . . designed for use in general purpose amplifier and switching applications , 0) (VCE = 100 Vdc, VEB = 0) BD243B, BD244B BD243C, BD244C mAdc ICES Collector Cutoff Current (VCE = 60 Vdc, IB = 0) µAdc BD243B, BD243C, BD244B , BD244C ICEO BD243B, BD244B


Original
PDF BD243B/D* BD243B/D 1N5825 BD243B BD243C BD244B BD244C MSD6100
Not Available

Abstract: No abstract text available
Text: : BD244B - 80 V : BD244C - 100 V V cbO : BD244A C ollector Em itter V oltage : BD244 - 45 V - 60 V : BD244B - 80 V : BD244C - 100 V V cE O : BD244A , Typ Max Unit : BD244A - 45 V - 60 lc = V : BD244B - 80 V : BD244C , , VBE= 0 - 0.4 mA : BD244B V ce = - 80V, VBE= 0 - 0.4 mA : BD244C V ce = -1 0 0 V , VBE= 0 - 0.4 mA - 1 mA IcEO : BD244B /244C C ollector C utoff C urrent


OCR Scan
PDF BD244/A/B/C BD243, BD243A, BD243B BD244 BD244B BD244C BD244A
r33pi

Abstract: BD243 b0244c R33p IEC134 BD244C BD244B BD244A BD244 BD243C
Text: r • , N AMER PHILIPS/DISCRETE _ SSE D ■bbSB^l "QOITHI G ■ÂBD244; BD244A BD244B , Manufacturer N AflER PHILIPS/DISCRETE BD244; BD244A BD244B ; BD244C 5SE D bbS3TBl □□1^420 7 T , BD244; A K/W K/W BD244B ; C -lB=0;-VCE = 30V -•CEO < 0,2 - mA -lB=0;-VCE=60V -fCEO < - 0,2 mA -VBE , ; BD244A BD244B ; BD244C T-33-21 fy > 3 MHz t0n tyP- 0.4 Ms toff typ. 0,7 ¡is Fig. 2 Switching times , BD244; BD244A 11 BD244B ; BD244C II T 33 21 Fig. 4 Test circuit for turn-off breakdown energy. Vim =


OCR Scan
PDF BD244; BD244A BD244B; BD244C r-33-p. BD243; BD243C. BD244 r33pi BD243 b0244c R33p IEC134 BD244C BD244B BD243C
Supplyframe Tracking Pixel