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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BD242C Harris Semiconductor Rochester Electronics 228 $0.74 $0.60
BD242C ON Semiconductor Rochester Electronics 44 $0.20 $0.16
BD242C SPC Multicomp Newark element14 25 $0.29 $0.29
BD242C STMicroelectronics Chip One Exchange 6,868 - -
BD242C 95 Chip One Exchange 3,545 - -
BD242CG ON Semiconductor ComS.I.T. 98 - -
BD242CG ON Semiconductor Rochester Electronics 2 $0.54 $0.44
BD242CG ON Semiconductor Future Electronics - $0.25 $0.20
BD242CG ON Semiconductor Farnell element14 1,793 £0.54 £0.24
BD242CG ON Semiconductor Avnet - $0.20 $0.19
BD242CG ON Semiconductor Newark element14 977 $0.68 $0.24
BD242CG ON Semiconductor Chip1Stop 36 $0.38 $0.38
BD242CG ON Semiconductor element14 Asia-Pacific 977 $0.84 $0.27
BD242CG ON SEMICONDUCTOR New Advantage Corporation 7,300 $0.40 $0.36
TBD242C Continental Device India Ltd Schukat electronic 1,150 €0.28 €0.18

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BD242C datasheet (50)

Part Manufacturer Description Type PDF
BD242C Bourns PNP SILICON POWER TRANSISTORS Original PDF
BD242C Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
BD242C Motorola 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS Original PDF
BD242C Motorola Complementary Silicon Plastic Power Transistors Original PDF
BD242C On Semiconductor POWER TRANSISTORS COMPLEMENTARY SILICON Original PDF
BD242C On Semiconductor Complementary Silicon Plastic Power Transistor Original PDF
BD242C Philips Semiconductors Silicon Epitaxial Base Power Transistors Original PDF
BD242C Power Innovations PNP SILICON POWER TRANSISTORS Original PDF
BD242C STMicroelectronics complementary power transistor Original PDF
BD242C STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS Original PDF
BD242C USHA PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. Original PDF
BD242C Various Russian Datasheets Transistor Original PDF
BD242C Boca Semiconductor COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS Scan PDF
BD242C Continental Device India Semiconductor Device Data Book 1996 Scan PDF
BD242C Continental Device India NPN PLASTIC POWER TRANSISTORS / PNP PLASTIC POWER TRANSISTORS Scan PDF
BD242C Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan PDF
BD242C Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
BD242C Ferranti Semiconductors Power Transistors 1977 Scan PDF
BD242C General Electric Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -115V, 40W. Scan PDF
BD242C Mospec POWER TRANSISTORS(3A,40W) Scan PDF

BD242C Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BD241

Abstract: BD241C BD242 BD242C BD242A BD241A BD241B BD242/A/B/C
Text: ) BD241B/BD242B BD241C/ BD242C BD241/BD242 BD241A/BD242A Collector-Emitter Voltage (RBE = 100 ) BD241B/BD242B BD241C/ BD242C BD241/BD242 BD241A/BD242A Emitter-Base Voltage (IC = 0) BD241B/BD242B BD241C/ BD242C BD241/BD242 BD241A/BD242A IC BD241B/BD242B BD241C/ BD242C Collector Current BD241/BD242 BD241A/BD242A ICM BD241B/BD242B BD241C/ BD242C BD241/BD242 BD241A/BD242A Base Current BD241B/BD242B BD241C/ BD242C BD241/BD242 @ Tamb BD241A/BD242A = 25° C BD241B/BD242B BD241C/ BD242C Power Dissipation


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PDF BD241, BD242, O-220 BD241/BD242 BD241A/BD242A BD241B/BD242B BD241C/BD242C BD241 BD241C BD242 BD242C BD242A BD241A BD241B BD242/A/B/C
D242B

Abstract: D241C BD242B equivalent bd242c BD241B
Text: Vdc (Min.) BD241B, BD242B = 100 Vdc (Min.) BD241C, BD242C · High Current Gain - Bandwidth Product f j , BD242C 100 115 Unit Vdc Vdc Vdc Adc Adc Adc Watts W /"C °C BD241B BD241C* PNP NPN BD242B BD242C , Bipolar Power Transistor Device Data BD241B B D241C BD242B BD242C ELECTRICAL CHARACTERISTICS (T c - , BD241C, BD242C ie b o Symbol Min. Max. Unit VCEO BD241B, BD242B BD241C, BD242C 'CEO BD241B, BD241C, BD242B, BD242C ic e s Vdc 80 100 0.3 mAdc pAdc 200 200 mAdc 1.0 Vdc Vdc


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PDF BD241B, BD242B BD241C, BD242C BD241B D241C D242B BD242B equivalent bd242c
2003 - BD241C

Abstract: MARKING 242B 241c npn transistor 400 volts.10 amperes
Text: BD241C* (NPN), BD242B (PNP), BD242C * (PNP) *Preferred Devices Complementary Silicon Plastic , Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) BD241C, BD242C High Current Gain - Bandwidth , 80 90 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage Collector-Emitter Voltage , Assembly Location = Year = Work Week ORDERING INFORMATION Device BD241C BD242B BD242C Package TO , ), BD242C * (PNP) 40 PD, POWER DISSIPATION (WATTS) 30 20 10 0 0 20 40 60 80


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PDF BD241C* BD242B BD242C* BD241C, BD242C O-220 BD241C MARKING 242B 241c npn transistor 400 volts.10 amperes
BD2428

Abstract: HEP transistors
Text: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS CopyrjgHI O 1997, Power Innovations , 8D242B BD242C BD242 VC£R VALUE -55 -70 -90 -115 -46 -60 VCEO -80 -100 VEBO fC !c m PttJt P.ot ViLIc2 Ti T , CoHector-emltter voltage (ic = -30 mA) BD242A BD242B BD242C V Emitter-base vottage Continuous collector , , BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS JU N E 1973 - REVISED M ARCH 1997 electrical , 0 BD242B BD242C BD242 BD242A BD2428 BD242C BD242/242A BD242B/242C Collector-emltter icES


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PDF BD242, BD242A, BD242B, BD242C BD241 BD242 BD242A 8D242B BD2428 HEP transistors
1995 - BD241B

Abstract: NT 407 F TRANSISTOR BD241C BD242B BD242C NT 407 F power transistor
Text: Emitter­Base Voltage Symbol BD241B BD242B BD241C BD242C Unit Collector­Emitter Voltage VCEO , - VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C · High , *Motorola Preferred Device BD241B BD241C* PNP BD242B BD242C * . . . designed for use in general , , VEB = 0) mAdc 200 200 BD241B, BD242B BD241C, BD242C ICES Collector Cutoff Current (VCE = 60 Vdc, IB = 0) µAdc BD241B, BD241C, BD242B, BD242C ICEO BD241B, BD242B BD241C


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PDF BD241B/D* BD241B/D BD241B NT 407 F TRANSISTOR BD241C BD242B BD242C NT 407 F power transistor
1973 - Not Available

Abstract: No abstract text available
Text: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , UNIT BD242C Collector-emitter voltage (IC = -30 mA) Emitter-base voltage BD242A BD242 BD242B BD242C BD242B Continuous collector current Continuous base current Peak collector current (see , Specifications are subject to change without notice. 1 BD242, BD242A, BD242B, BD242C PNP SILICON POWER , ) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 20 3 25 10 -1.2 -1.8 V V IB = 0 BD242A BD242B BD242C BD242


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242A BD242
BD242

Abstract: BD242B BD242C BD241 BD242/A/B/C BD242A
Text: -80 BD242C VEBO UNIT -55 BD242C BD242A VCEO OND EMIC GE S BD242A VCBO , ) Collector-emitter sustaining voltage UNIT -60 IC=30mA; IB=0 V BD242B -80 BD242C VCEsat MAX , BD242B IN TOR UC BD242C -0.2 mA -1 mA VCE=-80V; VBE=0 VCE=-100V; VBE


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PDF BD242/A/B/C O-220C BD241/A/B/C BD242 BD242B BD242C BD242A BD242 BD242B BD242C BD241 BD242/A/B/C BD242A
1973 - bd242 TRANSISTOR equivalent

Abstract: BD242B BD242A BD242C BD241 BD242
Text: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD242B VCER -70 BD242C -115 -45 BD242A BD242B V CEO -60 V -80 -100 BD242C VEBO Continuous collector current Peak collector current (see , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD242, BD242A, BD242B, BD242C , 5) MAX -60 BD242B -80 BD242C IC = -30 mA TYP -100 V VCE = -55 V


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242B BD242A bd242 TRANSISTOR equivalent BD242B BD242A BD242C BD242
1973 - Not Available

Abstract: No abstract text available
Text: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , „¦) BD242A BD242B VALUE -55 VCER -70 -115 BD242 -45 BD242A BD242B V CEO BD242C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) V -90 BD242C , , BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case , BD242A IB = 0 (see Note 5) MAX -60 BD242B -80 BD242C IC = -30 mA TYP -100


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242 BD242A BD242B
2007 - BD241C-D

Abstract: BD241C BD241CG BD242B BD242BG BD242C BD242CG
Text: BD241C (NPN), BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices , ·Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) BD241C, BD242C ·High Current Gain - Bandwidth , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD242B BD241C BD242C Unit , , Junction-to-Case RqJC 3.125 °C/W BD242BG TO-220AB (Pb-Free) 50 Units/Rail BD242C TO-220AB 50 Units/Rail BD242CG TO-220AB (Pb-Free) 50 Units/Rail Stresses exceeding Maximum


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PDF BD241C BD242B BD242C BD241C BD242C BD241C, O-220 BD241C/D BD241C-D BD241CG BD242B BD242BG BD242CG
2001 - BA241

Abstract: ba241c 30Vc
Text: amplifier and switching applications. BD241C * BD242B BD242C * *ON Semiconductor Preferred Device NPN , 500 mAdc VCEO(sus) = 80 Vdc (Min.) BD242B VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C VCE = 1.2 Vdc (Max , VCES VEB IC IB BD242B 80 90 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Adc Adc Collector­Emitter , 1 January, 2001 ­ Rev. 8 Publication Order Number: BA241C/D BD241C BD242B BD242C 40 PD , Cutoff Current (VCE = 60 Vdc, IB = 0) VCEO Vdc BD242B BD241C, BD242C 80 100 ICEO ICES 0.3 mAdc µAdc


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PDF BD241C BD242B BD242C BD241C, BD242C r14525 BA241C/D BA241 ba241c 30Vc
1973 - bd242 TRANSISTOR equivalent

Abstract: BD242 BD242A BD241 BD242B BD242C
Text: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , Collector-emitter voltage (RBE = 100 ) BD242A BD242B VCER BD242B V -90 -45 VCEO BD242C -60 , ) UNIT -55 BD242C BD242A VALUE -65 to +150 °C TL 250 °C This value applies , BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 , Collector-emitter breakdown voltage BD242A IB = 0 (see Note 5) MAX -60 BD242B -80 BD242C


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242 BD242A BD242B bd242 TRANSISTOR equivalent BD242 BD242A BD242B BD242C
BD242A

Abstract: BD241 thermal d242 198S 241B BD241C BD242 BD242B BD242C
Text: N AMER PHILIPS/DISCRETE 55E D ■bb53131 GGimGS □ ■BD242; BD242A BD242B; BD242C j I j , BD242; BD242A BD242B; BD242C / 1/j.^v.r iil S5E D ^53131 GOlTMOb S T-33-19 RATINGS Limiting , epitaxial base power transistors SSE D ■bbS3T31 QQITMO? 4 ■BD242; BD242A BD242B; BD242C Transition , Its Respective Manufacturer N AMER PHILIPS/DISCRETE BD242; BD242A BD242B; BD242C 'X 2SE D â , BD242B; BD242C T-33-19 0,1 ms 0,2 ms 10 -VrF(V) 10' Fig. 5 Safe Operating ARea; Tmb = 25 °C. I


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PDF bb53131 BD242; BD242A BD242B; BD242C BD241 BD241C. BD242 7z88352 thermal d242 198S 241B BD241C BD242B BD242C
2001 - BD241C-D

Abstract: BD241C BD242C
Text: BD242C * . . . designed for use in general purpose amplifier and switching applications. · , 3.0 Adc Collector­Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C High , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD241C BD242C Unit Collector­Emitter , Publication Order Number: BD241C/D BD241C BD242C PD, POWER DISSIPATION (WATTS) 40 30 20 10 , 0) 1.0 IEBO Collector­Emitter Sustaining Voltage1 (IC = 30 mAdc, IB = 0) BD241C, BD242C


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PDF BD241C* BD242C* BD241C, BD242C r14525 BD241C/D BD241C-D BD241C BD242C
2011 - Not Available

Abstract: No abstract text available
Text: BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http , (sus) = 100 Vdc (Min) BD241C, BD242C • High Current Gain − Bandwidth Product fT = 3.0 MHz (Min , BD241C BD242C Unit Collector−Emitter Voltage VCEO 80 100 Vdc Collector−Emitter , /W BD242BG TO−220AB (Pb−Free) 50 Units/Rail BD242C TO−220AB 50 Units/Rail BD242CG TO−220AB (Pb−Free) 50 Units/Rail Stresses exceeding Maximum Ratings may damage the


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PDF BD241C BD242B BD242C BD241C, BD241C/D
2003 - 400 watts amplifier circuit diagram

Abstract: BD241C BD241C-D BD242B BD242C BDXXX
Text: BD241C* (NPN), BD242B (PNP), BD242C * (PNP) *Preferred Devices Complementary Silicon Plastic , Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) BD241C, BD242C High Current Gain - Bandwidth Product fT = , BD242C Collector-Emitter Voltage VCEO 80 100 Collector-Emitter Voltage VCES , _C/W BD242C TO-220AB 50 Units/Rail Thermal Resistance, Junction to Case RJC 3.125 , 1 Publication Order Number: BD241C/D BD241C* (NPN), BD242B (PNP), BD242C * (PNP) PD, POWER


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PDF BD241C* BD242B BD242C* BD241C, BD242C O-220 BD241C/D 400 watts amplifier circuit diagram BD241C BD241C-D BD242B BD242C BDXXX
1973 - bd242 TRANSISTOR equivalent

Abstract: BD242B BD241 BD242 BD242A BD242C
Text: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD242B VCER -70 BD242C -115 -45 BD242A BD242B V CEO -60 V -80 -100 BD242C VEBO Continuous collector current Peak collector current (see , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD242, BD242A, BD242B, BD242C , 5) MAX -60 BD242B -80 BD242C IC = -30 mA TYP -100 V VCE = -55 V


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242B BD242A bd242 TRANSISTOR equivalent BD242B BD242 BD242A BD242C
1998 - bipolar transistor td tr ts tf

Abstract: BD241C-D BD241C BD242B BD242C BD242B equivalent
Text: BD242B BD242C * Complementary Silicon Plastic Power Transistors . . . designed for use in general , (sus) = 100 Vdc (Min.) BD241C, BD242C · High Current Gain - Bandwidth Product fT = 3.0 MHz (Min) @ , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD242B BD241C BD242C Unit Collector­Emitter Voltage , Vdc, VEB = 0) mAdc 200 200 BD242B BD241C, BD242C ICES Collector Cutoff Current (VCE = 60 Vdc, IB = 0) µAdc BD241C, BD242B, BD242C ICEO 0.3 mAdc 80 100 BD242B


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PDF BD241C/D BD241C* BD242B BD242C* BD241C, BD242C bipolar transistor td tr ts tf BD241C-D BD241C BD242B BD242C BD242B equivalent
Not Available

Abstract: No abstract text available
Text: BD242, BD242A, BD242B, BD242C PNP SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power , -70 -90 -115 -45 -60 UNIT BD242B BD242C BD242 V Collector-em itter voltage (lc = -30 mA) BD242A BD242B BD242C V CEO -80 -100 V Em itter-base voltage Continuous collector current Peak , , BD242C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 electrical characteristics at 25 , V -90 V lo B =0 BD242A BD242B BD242C V V BE = 0 V BE = 0 V BE = 0 V BE = 0 lB = 0


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PDF BD242, BD242A, BD242B, BD242C BD241 BD242 BD242A BD242B BD242
2011 - BD24x

Abstract: BD241CG BD242CG
Text: BD242C BD242CG Package TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free) TO-220AB TO-220AB (Pb-Free , BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors Designed , Adc · High Current Gain - Bandwidth Product VCEO(sus) = 100 Vdc (Min) BD241C, BD242C fT = 3.0 , Symbol VCEO VCES VEB IC BD242B 80 90 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage , ) (VCE = 60 Vdc, IB = 0) BD242B BD241C, BD242C BD242B BD241C, BD242C 80 100 ICEO 0.3 mAdc Collector


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PDF BD241C BD242B BD242C BD241C, BD242C O-220 BD241C/D BD24x BD241CG BD242CG
2001 - BD241C

Abstract: No abstract text available
Text: general purpose amplifier and switching applications. BD241C * BD242B BD242C * *ON Semiconductor , .) BD241C, BD242C High Current Gain - Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc Compact TO , VCES VEB IC IB BD242B 80 90 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Adc Adc Collector­Emitter , 1 March, 2001 ­ Rev. 2 Publication Order Number: BD241C/D BD241C BD242B BD242C 40 PD , Current (VCE = 60 Vdc, IB = 0) VCEO Vdc BD242B BD241C, BD242C 80 100 ICEO ICES 0.3 mAdc µAdc BD241C


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PDF BD241C BD242B BD242C BD242B BD241C, BD242C r14525 BD241C/D BD241C
2004 - BD241C

Abstract: BD242C 7333 A
Text: BD241C & BD242C General Purpose Amplifiers Features: · NPN/PNP Plastic Power Transistors. · General Purpose Amplifier and Switching Applications. BD241C NPN BD242C PNP TO-220 Plastic Package , Page 1 31/05/05 V1.0 BD241C & BD242C General Purpose Amplifiers Absolute Maximum Ratings , Base) BD242C 115 Symbol 115 VCEO Unit V Collector Current Total Power , 150 VCE(sat) hFE °C 1.2 V 25 25 - BD241C minimum 1.2 BD242C


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PDF BD241C BD242C BD241C BD242C O-220 7333 A
BD242S

Abstract: BD242C BD242B BD242A BD242 BD241C BD241B BD241A BD241 17533
Text: Transistors _ BD242, BD242A, BD242B, BD242C File Number 672 Epitaxial-Base Silicon P-N-P VERSAWATT , types BD241, BD241A, BD241B, and BD241C Types BD242, BD242A, BD242B, and BD242C are epitaxial-base , RATINGS, Absolute-Maximum Values: BD242 BD242A BD242B BD242C COLLECTOR-TO-EMITTER VOLTAGE: With , Transistors BD242, BD242A, BD242B, BD242C ELECTRICAL CHARACTERISTICS at Case Temperature (Tc) = 25Â , bd242c vce vbe 'c 'b min. max. min. max. min. max. min. max. Coirector Cutoff Current: With base


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PDF BD242, BD242A, BD242B, BD242C BD241, BD241A, BD241B, BD241C BD242S BD242B BD242A BD242 BD241C BD241B BD241A BD241 17533
2005 - BD241C-D

Abstract: BD241C BD241CG BD242B BD242BG BD242C BD242CG BD242B equivalent
Text: affected. BD242C TO-220AB 50 Units/Rail BD242CG TO-220AB (Pb-Free) 50 Units/Rail *For , BD241C (NPN), BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices , Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) BD241C, BD242C · High Current Gain - , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD242B BD241C BD242C Unit , BD241C, BD242C Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) 0.3


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PDF BD241C BD242B BD242C BD241C BD242C BD241C, O-220 BD241C/D BD241C-D BD241CG BD242B BD242BG BD242CG BD242B equivalent
Not Available

Abstract: No abstract text available
Text: BD242B; BD242C J T -3 3 -1 ? SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors , N AflER PHILIPS/DISCRETE BD242; BD242A BD242B; BD242C 25E D b b S B IB l QOnM Ob 2 , – Silicon epitaxial base power transistors I J BD242; BD242A (^ B D 2 4 2 B ; BD242C Tâ , PHILIPS/DISCRETE 25E D fab53131 QDimDfl b BD242; BD242A BD242B; BD242C sJL T-33-19 Fig , ; BD242C °JL 10- 6 10- 5 T-33-19 10~4 10~3 10~2 Fig. 6 Power pulse rating chart


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PDF BD242; BD242A BD242B; BD242C BD241C. BD242 T-33-19
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