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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BD242B Fairchild Semiconductor Corporation ComS.I.T. 2,890 - -
BD242B STMicroelectronics Avnet - - -
BD242B STMicroelectronics Newark element14 830 $0.47 $0.15
BD242B Fairchild Semiconductor Corporation Rochester Electronics 3,632 $0.31 $0.25
BD242B ON Semiconductor Rochester Electronics 1,050 $0.18 $0.15
BD242B STMicroelectronics element14 Asia-Pacific - $0.63 $0.27
BD242B STMicroelectronics Chip One Exchange 628 - -
BD242B Motorola Semiconductor Products Chip One Exchange 481 - -
BD242B STMicroelectronics Schukat electronic 1,150 €0.25 €0.16
BD242B STMicroelectronics Farnell element14 90 £0.75 £0.51
BD242BFP STMicroelectronics Bristol Electronics 100 - -
BD242BG ON Semiconductor Avnet - - -
BD242BG ON Semiconductor Chip One Exchange 257 - -
BD242BG ON Semiconductor Chip1Stop 100 $0.40 $0.30
BD242BG ON Semiconductor Rochester Electronics 32,171 $0.36 $0.29

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BD242B datasheet (56)

Part Manufacturer Description Type PDF
BD242B Bourns PNP SILICON POWER TRANSISTORS Original PDF
BD242B Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
BD242B Motorola Complementary Silicon Plastic Power Transistors Original PDF
BD242B Motorola 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS Original PDF
BD242B On Semiconductor Complementary Silicon Plastic Power Transistors Original PDF
BD242B Philips Semiconductors Silicon Epitaxial Base Power Transistors Original PDF
BD242B Power Innovations PNP SILICON POWER TRANSISTORS Original PDF
BD242B STMicroelectronics complementary power transistor Original PDF
BD242B STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS Original PDF
BD242B STMicroelectronics NPN power transistors Original PDF
BD242B USHA PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. Original PDF
BD242B Boca Semiconductor COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS Scan PDF
BD242B Continental Device India Semiconductor Device Data Book 1996 Scan PDF
BD242B Continental Device India NPN PLASTIC POWER TRANSISTORS / PNP PLASTIC POWER TRANSISTORS Scan PDF
BD242B Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Scan PDF
BD242B Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
BD242B Ferranti Semiconductors Power Transistors 1977 Scan PDF
BD242B General Electric Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 40W. Scan PDF
BD242B Micro Electronics PNP SILICON EPITAXIAL BASE POWER TRANSISTORS Scan PDF
BD242B Mospec POWER TRANSISTORS(3A,40W) Scan PDF

BD242B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BD241

Abstract: BD241C BD242 BD242C BD242A BD241A BD241B BD242/A/B/C
Text: ) BD241B/ BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A Collector-Emitter Voltage (RBE = 100 ) BD241B/ BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A Emitter-Base Voltage (IC = 0) BD241B/ BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A IC BD241B/ BD242B BD241C/BD242C Collector Current BD241/BD242 BD241A/BD242A ICM BD241B/ BD242B BD241C/BD242C BD241/BD242 BD241A/BD242A Base Current BD241B/ BD242B BD241C/BD242C BD241/BD242 @ Tamb BD241A/BD242A = 25° C BD241B/ BD242B BD241C/BD242C Power Dissipation


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PDF BD241, BD242, O-220 BD241/BD242 BD241A/BD242A BD241B/BD242B BD241C/BD242C BD241 BD241C BD242 BD242C BD242A BD241A BD241B BD242/A/B/C
BD242

Abstract: BD242B BD242C BD241 BD242/A/B/C BD242A
Text: BD242 Collector-base voltage HAN INC Open emitter BD242B VALUE -70 V -90 -115 BD242 -45 Collector-emitter voltage -60 Open base V BD242B Emitter-base voltage , ) Collector-emitter sustaining voltage UNIT -60 IC=30mA; IB=0 V BD242B -80 BD242C VCEsat MAX , -0.3 mA BD242/A VCE=-30V; IB=0 BD242B /C BD242 ICES VCE=-45V; VBE=0 BD242A , BD242B IN TOR UC BD242C -0.2 mA -1 mA VCE=-80V; VBE=0 VCE=-100V; VBE


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PDF BD242/A/B/C O-220C BD241/A/B/C BD242 BD242B BD242C BD242A BD242 BD242B BD242C BD241 BD242/A/B/C BD242A
2003 - BD241C

Abstract: MARKING 242B 241c npn transistor 400 volts.10 amperes
Text: BD241C* (NPN), BD242B (PNP), BD242C* (PNP) *Preferred Devices Complementary Silicon Plastic , ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ MAXIMUM RATINGS Rating Symbol VCEO VCES VEB IC BD242B , Assembly Location = Year = Work Week ORDERING INFORMATION Device BD241C BD242B BD242C Package TO , 155 August, 2003 - Rev. 5 Publication Order Number: BD241C/D BD241C* (NPN), BD242B (PNP , ) VCEO Vdc BD242B BD241C, BD242C 80 100 ICEO 0.3 mAdc BD242B BD241C, BD242C Collector Cutoff Current (VCE


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PDF BD241C* BD242B BD242C* BD241C, BD242C O-220 BD241C MARKING 242B 241c npn transistor 400 volts.10 amperes
D242B

Abstract: D241C BD242B equivalent bd242c BD241B
Text: Vdc (Min.) BD241B, BD242B = 100 Vdc (Min.) BD241C, BD242C · High Current Gain - Bandwidth Product f j , Temperature Flange Symbol VCEO VCES Ve b 'c BD241B BD242B 80 90 5.0 3.0 5.0 1.0 40 0.32 - 6 5 t o + 150 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Adc Adc Watts W /"C °C BD241B BD241C* PNP NPN BD242B BD242C , Bipolar Power Transistor Device Data BD241B B D241C BD242B BD242C ELECTRICAL CHARACTERISTICS (T c - , ) Coiiector-Emitter Saturation Voltage (IC - 3.0 Adc, lB - 600 Adc) hFE 25 10 VcE(sat) 1.2 VßE(on) 1.8 BD241B, BD242B


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PDF BD241B, BD242B BD241C, BD242C BD241B D241C D242B BD242B equivalent bd242c
BD2428

Abstract: HEP transistors
Text: BD242, BD242A, BD242B , BD242C PNP SILICON POWER TRANSISTORS CopyrjgHI O 1997, Power Innovations , CoHector-emltter voltage (ic = -30 mA) BD242A BD242B BD242C V Emitter-base vottage Continuous collector , , BD242A, BD242B , BD242C PNP SILICON POWER TRANSISTORS JU N E 1973 - REVISED M ARCH 1997 electrical , 0 BD242B BD242C BD242 BD242A BD2428 BD242C BD242/242A BD242B /242C Collector-emltter icES , values vary slightly with transistor parameters. 2-24 BD242, B0242A, BD242B , BD242C PNP SILICON


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PDF BD242, BD242A, BD242B, BD242C BD241 BD242 BD242A 8D242B BD2428 HEP transistors
1995 - BD241B

Abstract: NT 407 F TRANSISTOR BD241C BD242B BD242C NT 407 F power transistor
Text: Emitter­Base Voltage Symbol BD241B BD242B BD241C BD242C Unit Collector­Emitter Voltage VCEO , - VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C · High , *Motorola Preferred Device BD241B BD241C* PNP BD242B BD242C* . . . designed for use in general , , VEB = 0) mAdc 200 200 BD241B, BD242B BD241C, BD242C ICES Collector Cutoff Current (VCE = 60 Vdc, IB = 0) µAdc BD241B, BD241C, BD242B , BD242C ICEO BD241B, BD242B BD241C


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PDF BD241B/D* BD241B/D BD241B NT 407 F TRANSISTOR BD241C BD242B BD242C NT 407 F power transistor
1973 - Not Available

Abstract: No abstract text available
Text: BD242, BD242A, BD242B , BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , „¦) BD242A BD242B VALUE -55 VCER -70 -115 BD242 -45 BD242A BD242B V CEO BD242C , , BD242A, BD242B , BD242C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case , BD242A IB = 0 (see Note 5) MAX -60 BD242B -80 BD242C IC = -30 mA TYP -100 , Collector-emitter VCE = -70 V VBE = 0 BD242A -0.2 cut-off current VCE = -90 V VBE = 0 BD242B


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242 BD242A BD242B
1973 - bd242 TRANSISTOR equivalent

Abstract: BD242B BD241 BD242 BD242A BD242C
Text: BD242, BD242A, BD242B , BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD242B VCER -70 BD242C -115 -45 BD242A BD242B V CEO , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD242, BD242A, BD242B , BD242C , 5) MAX -60 BD242B -80 BD242C IC = -30 mA TYP -100 V VCE = -55 V , = -70 V VBE = 0 BD242A -0.2 cut-off current VCE = -90 V VBE = 0 BD242B -0.2


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242B BD242A bd242 TRANSISTOR equivalent BD242B BD242 BD242A BD242C
1973 - bd242 TRANSISTOR equivalent

Abstract: BD242B BD242A BD242C BD241 BD242
Text: BD242, BD242A, BD242B , BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use , Collector-emitter voltage (RBE = 100 ) BD242B VCER -70 BD242C -115 -45 BD242A BD242B V CEO , SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD242, BD242A, BD242B , BD242C , 5) MAX -60 BD242B -80 BD242C IC = -30 mA TYP -100 V VCE = -55 V , = -70 V VBE = 0 BD242A -0.2 cut-off current VCE = -90 V VBE = 0 BD242B -0.2


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242B BD242A bd242 TRANSISTOR equivalent BD242B BD242A BD242C BD242
1973 - Not Available

Abstract: No abstract text available
Text: BD242, BD242A, BD242B , BD242C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with , UNIT BD242C Collector-emitter voltage (IC = -30 mA) Emitter-base voltage BD242A BD242 BD242B BD242C BD242B Continuous collector current Continuous base current Peak collector current (see , Specifications are subject to change without notice. 1 BD242, BD242A, BD242B , BD242C PNP SILICON POWER , ) (see Notes 5 and 6) f = 1 kHz f = 1 MHz 20 3 25 10 -1.2 -1.8 V V IB = 0 BD242A BD242B BD242C BD242


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242A BD242
2001 - BA241

Abstract: ba241c 30Vc
Text: amplifier and switching applications. BD241C * BD242B BD242C * *ON Semiconductor Preferred Device NPN , 500 mAdc VCEO(sus) = 80 Vdc (Min.) BD242B VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C VCE = 1.2 Vdc (Max , VCES VEB IC IB BD242B 80 90 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Adc Adc Collector­Emitter , 1 January, 2001 ­ Rev. 8 Publication Order Number: BA241C/D BD241C BD242B BD242C 40 PD , Cutoff Current (VCE = 60 Vdc, IB = 0) VCEO Vdc BD242B BD241C, BD242C 80 100 ICEO ICES 0.3 mAdc µAdc


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PDF BD241C BD242B BD242C BD241C, BD242C r14525 BA241C/D BA241 ba241c 30Vc
1973 - bd242 TRANSISTOR equivalent

Abstract: BD242 BD242A BD241 BD242B BD242C
Text: BD242, BD242A, BD242B , BD242C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , Collector-emitter voltage (RBE = 100 ) BD242A BD242B VCER BD242B V -90 -45 VCEO BD242C -60 , BD242, BD242A, BD242B , BD242C PNP SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 , Collector-emitter breakdown voltage BD242A IB = 0 (see Note 5) MAX -60 BD242B -80 BD242C , V CE = -70 V V BE = 0 BD242A -0.2 cut-off current V CE = -90 V V BE = 0 BD242B


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242 BD242A BD242B bd242 TRANSISTOR equivalent BD242 BD242A BD242B BD242C
BD242A

Abstract: BD241 thermal d242 198S 241B BD241C BD242 BD242B BD242C
Text: N AMER PHILIPS/DISCRETE 55E D ■bb53131 GGimGS □ ■BD242; BD242A BD242B ; BD242C j I j , BD242; BD242A BD242B ; BD242C / 1/j.^v.r iil S5E D ^53131 GOlTMOb S T-33-19 RATINGS Limiting , BD242; A < < < 0,1 BD242B ;C - > -VBE < ~vCEsat < hfel > E(BR) > 0,1 0,2 mA mA, mA 0,2 , epitaxial base power transistors SSE D ■bbS3T31 QQITMO? 4 ■BD242; BD242A BD242B ; BD242C Transition , Its Respective Manufacturer N AMER PHILIPS/DISCRETE BD242; BD242A BD242B ; BD242C 'X 2SE D â


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PDF bb53131 BD242; BD242A BD242B; BD242C BD241 BD241C. BD242 7z88352 thermal d242 198S 241B BD241C BD242B BD242C
1998 - bipolar transistor td tr ts tf

Abstract: BD241C-D BD241C BD242B BD242C BD242B equivalent
Text: BD242B BD242C* Complementary Silicon Plastic Power Transistors . . . designed for use in general , (Max) @ IC = 3.0 Adc · Collector­Emitter Sustaining Voltage - VCEO(sus) = 80 Vdc (Min.) BD242B VCEO , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD242B BD241C BD242C Unit Collector­Emitter Voltage , Vdc, VEB = 0) mAdc 200 200 BD242B BD241C, BD242C ICES Collector Cutoff Current (VCE = 60 Vdc, IB = 0) µAdc BD241C, BD242B , BD242C ICEO 0.3 mAdc 80 100 BD242B


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PDF BD241C/D BD241C* BD242B BD242C* BD241C, BD242C bipolar transistor td tr ts tf BD241C-D BD241C BD242B BD242C BD242B equivalent
BD242

Abstract: BD242C BD242B BD242A vbe0 30v
Text: CONDITIONS BD242 VCBO Collector-base voltage BD242A VALUE -55 Open emitter -70 BD242B Collector-emitter voltage -115 BD242 -45 BD242A Open base -60 BD242B Emitter-base voltage , IC=30mA; IB=0 V BD242B -80 BD242C VCEsat MAX -45 BD242A TYP. -100 , BD242/A BD242B /C VCE=-60V; IB=0 BD242 VCE=-45V; VBE=0 BD242A VCE=-60V; VBE=0 BD242B


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PDF BD242/A/B/C O-220C BD241/A/B/C BD242 BD242A BD242B BD242C BD242 BD242C BD242B BD242A vbe0 30v
2000 - BD242

Abstract: No abstract text available
Text: : BD242 : BD242A : BD242B : BD242C Collector-Emitter Voltage : BD242 : BD242A : BD242B : BD242C , : BD242 : BD242A : BD242B : BD242C Collector Cut-off Current Collector Cut-off Current : BD242/A : BD242B /C : BD242 : BD242A : BD242B : BD242C Test Condition IC = - 30mA, IB = 0 Min. - 45 - 60 - 80 - 100 -


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PDF BD242/A/B/C BD241/A/B/C O-220 BD242 BD242A BD242B BD242C BD242
BD242A

Abstract: No abstract text available
Text: : BD242B - 80 V : BD242C - 100 V - 55 V C ollector Em itter V oltage : BD242 V ceO VcER : BD242A - 70 V : BD242B - 90 V - 115 V Em itter Base Voltage , : BD242A - 45 V - 60 lc = V : BD242B - 80 V : BD242C - 100 V C ollector , : BD242B /C - 0.3 mA V ce = - 45V, VBE= 0 - 0.2 mA : BD242A V ce = - 60V, VBE= 0 - 0.2 mA : BD242B V ce = - 80V, VBE= 0 - 0.2 mA : BD242C V ce = -1 0 0 V , VBE= 0


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PDF BD242/A/B/C 241/A/B/C BD242 BD242A BD242B BD242C BD242A
Not Available

Abstract: No abstract text available
Text: BD242, BD242A, BD242B , BD242C PNP SILICON POWER TRANSISTORS C o p y rig h t© 1997, Power , -70 -90 -115 -45 -60 UNIT BD242B BD242C BD242 V Collector-em itter voltage (lc = -30 mA) BD242A BD242B BD242C V CEO -80 -100 V Em itter-base voltage Continuous collector current Peak , . Production processing does not necessarily include testing of all parameters. P BD242, BD242A, BD242B , V -90 V lo B =0 BD242A BD242B BD242C V V BE = 0 V BE = 0 V BE = 0 V BE = 0 lB = 0


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PDF BD242, BD242A, BD242B, BD242C BD241 BD242 BD242A BD242B BD242
BD242S

Abstract: BD242C BD242B BD242A BD242 BD241C BD241B BD241A BD241 17533
Text: Transistors _ BD242, BD242A, BD242B , BD242C File Number 672 Epitaxial-Base Silicon P-N-P VERSAWATT , types BD241, BD241A, BD241B, and BD241C Types BD242, BD242A, BD242B , and BD242C are epitaxial-base , RATINGS, Absolute-Maximum Values: BD242 BD242A BD242B BD242C COLLECTOR-TO-EMITTER VOLTAGE: With , Transistors BD242, BD242A, BD242B , BD242C ELECTRICAL CHARACTERISTICS at Case Temperature (Tc) = 25°C characteristic symbol test conditions limits units voltage v dc current a dc bd242 bd242a bd242b


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PDF BD242, BD242A, BD242B, BD242C BD241, BD241A, BD241B, BD241C BD242S BD242B BD242A BD242 BD241C BD241B BD241A BD241 17533
2011 - Not Available

Abstract: No abstract text available
Text: BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors http , Ž ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD242B , BD242B TO−220AB 50 Units/Rail Thermal Resistance, Junction−to−Case RqJC 3.125 °C/W BD242BG TO−220AB (Pb−Free) 50 Units/Rail BD242C TO−220AB 50 Units/Rail , BD242B BD241C, BD242C Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0


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PDF BD241C BD242B BD242C BD241C, BD241C/D
2007 - BD241C-D

Abstract: BD241C BD241CG BD242B BD242BG BD242C BD242CG
Text: BD241C (NPN), BD242B (PNP), BD242C (PNP) BD241C and BD242C are Preferred Devices , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Symbol BD242B BD241C BD242C Unit , , Junction-to-Ambient RqJA 62.5 °C/W BD242B TO-220AB 50 Units/Rail Thermal Resistance, Junction-to-Case RqJC 3.125 °C/W BD242BG TO-220AB (Pb-Free) 50 Units/Rail BD242C TO , Cutoff Current (VBE = 5.0 Vdc, IC = 0) ICEO mAdc 200 mAdc IEBO 1.0 mAdc BD242B


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PDF BD241C BD242B BD242C BD241C BD242C BD241C, O-220 BD241C/D BD241C-D BD241CG BD242B BD242BG BD242CG
BD242C

Abstract: BD242B Transistor Vb
Text: Rating Unit Collector Emitter Voltage BD242 BD242A BD242B BD242C Collector Emitter Voltage BD242 BD242A BD242B BD242C Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current , Condition Min Typ Max Unit 'C ollector Emitter Sustaining Voltage BD242 V ceo (SUS) BD242A BD242B BD242C Collector Cutoff Current BD242/A I CEO BD242B /C Collector Cutoff Current BD242 I ces BD242A BD242B BD242C


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PDF BD242/A/B/C BD241/A/B/C BD242 BD242A BD242B BD242C Transistor Vb
2001 - BD241C

Abstract: No abstract text available
Text: general purpose amplifier and switching applications. BD241C * BD242B BD242C * *ON Semiconductor , = 3.0 Adc Collector­Emitter Sustaining Voltage - VCEO(sus) = 80 Vdc (Min.) BD242B = 100 Vdc (Min , VCES VEB IC IB BD242B 80 90 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Adc Adc Collector­Emitter , 1 March, 2001 ­ Rev. 2 Publication Order Number: BD241C/D BD241C BD242B BD242C 40 PD , Current (VCE = 60 Vdc, IB = 0) VCEO Vdc BD242B BD241C, BD242C 80 100 ICEO ICES 0.3 mAdc µAdc BD241C


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PDF BD241C BD242B BD242C BD242B BD241C, BD242C r14525 BD241C/D BD241C
2011 - BD24x

Abstract: BD241CG BD242CG
Text: Year WW = Work Week G = Pb-Free Package ORDERING INFORMATION Device BD241C BD241CG BD242B BD242BG , BD241C (NPN), BD242B (PNP), BD242C (PNP) Complementary Silicon Plastic Power Transistors Designed , Symbol VCEO VCES VEB IC BD242B 80 90 BD241C BD242C 100 115 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage , ) (VCE = 60 Vdc, IB = 0) BD242B BD241C, BD242C BD242B BD241C, BD242C 80 100 ICEO 0.3 mAdc Collector , = 0) BD242B BD241C, BD242C ICES 200 mAdc IEBO 1.0 mAdc ON CHARACTERISTICS (Note 1) DC Current Gain


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PDF BD241C BD242B BD242C BD241C, BD242C O-220 BD241C/D BD24x BD241CG BD242CG
BD242B

Abstract: BD242C BD241 BD242 BD242A
Text: TRANSYS ELECTRONICS LIMITED BD242, BD242A, BD242B , BD242C PNP SILICON POWER TRANSISTORS , (RBE = 100 Q) BD242 BD242A BD242B BD242C VCER -55 -70 -90 -115 V Collector-emitter voltage (lc = -30 mA) BD242 BD242A BD242B BD242C VCEO -45 -60 -80 -100 V Emitter-base voltage VEBO -5 V Continuous , 20 mH, lB(on) = -0.4 A, RBE = 100 Q, VBE(off) = 0, Rs = 0.1 Q, Vcc = -20 V. BD242, BD242A, BD242B , -30 mA (see Note 5) lB = 0 BD242A BD242B BD242C -60 -80 -100 V VCE= -55 V VBE = 0 BD242 -0.2


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PDF BD242, BD242A, BD242B, BD242C BD241 O-220 BD242 BD242A BD242B
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