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BLM03BD241SN1D Murata Manufacturing Co Ltd Ferrite Chip, 1 Function(s), 0.2A, EIA STD PACKAGE SIZE 0201, 2 PIN

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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
ABBD24110000-342 Thomas & Betts Sager 0 $3.73 $3.73
ABBD24110000-343 Thomas & Betts Sager 0 $3.73 $3.73
BD241A Harris Semiconductor Rochester Electronics 177 $0.53 $0.43
BD241A STMicroelectronics Chip One Exchange - -
BD241A STMicroelectronics ComS.I.T. - -
BD241B Motorola Semiconductor Products Chip One Exchange - -
BD241BTU Fairchild Semiconductor Corporation Rochester Electronics 1,950 $0.34 $0.28
BD241C STMicroelectronics element14 Asia-Pacific 6 $0.70 $0.27
BD241C STMicroelectronics Avnet 0 $0.19 $0.16
BD241C STMicroelectronics Future Electronics 0 $0.19 $0.16
BD241C Motorola Semiconductor Products Chip One Exchange - -
BD241C SPC Multicomp Farnell element14 506 £0.79 £0.40
BD241C 95 Chip One Exchange - -
BD241C STMicroelectronics Farnell element14 0 £0.36 £0.19
BD241C ON Semiconductor Rochester Electronics 46 $0.20 $0.16
BD241C STMicroelectronics Chip One Exchange - -
BD241C Chip One Exchange - -
BD241C SPC Multicomp Newark element14 506 $0.90 $0.33
BD241C SPC Multicomp element14 Asia-Pacific 6 $0.85 $0.50
BD241C STMicroelectronics ComS.I.T. - -
BD241CG ON Semiconductor Avnet 0 $0.24 $0.22
BD241CG ON Semiconductor Rochester Electronics 3,627 $0.36 $0.29
BD241CG ON Semiconductor Chip1Stop 188 $0.39 $0.32
BD241CG ON Semiconductor Chip1Stop 38 $0.39 $0.39
BD241CTU ON Semiconductor RS Components 5,350 £0.59 £0.36
BD241CTU Fairchild Semiconductor Corporation Rochester Electronics 7,317 $0.45 $0.37
BD241CTU ON Semiconductor Future Electronics 0 $0.49 $0.38
BD241CTU ON Semiconductor Avnet 0 $0.23 $0.22
BLM03BD241SN1D Murata Manufacturing Co Ltd RS Components 29,800 £0.01 £0.01
BLM03BD241SN1D Murata Manufacturing Co Ltd Chip One Exchange - -
BLM03BD241SN1D Murata Manufacturing Co Ltd Chip1Stop 105,000 $0.02 $0.02
BLM03BD241SN1D Murata Manufacturing Co Ltd Future Electronics 90,000 $0.03 $0.03
BLM03BD241SN1D Chip One Exchange - -
BLM03BD241SN1D Murata Manufacturing Co Ltd Future Electronics 0 $0.06 $0.03
BLM03BD241SN1D Murata Manufacturing Co Ltd New Advantage Corporation 60,000 $0.05 $0.05
BLM03BD241SN1D Murata Manufacturing Co Ltd Farnell element14 13,230 £0.02 £0.01
BLM03BD241SN1D Murata Manufacturing Co Ltd Newark element14 13,320 $0.15 $0.04
BLM03BD241SN1D Murata Manufacturing Co Ltd Avnet 0 $0.03 $0.03
BLM03BD241SN1D Murata Manufacturing Co Ltd element14 Asia-Pacific 13,320 $0.05 $0.01
FBD24-1 Thomas & Betts Sager 0 $242.28 $219.66
GDM21FB-D24-1KK Hirschmann Electronics GmbH & Co Kg Farnell element14 130 £8.83 £7.11
GDM21FB-D24-1KK Hirschmann Electronics GmbH & Co Kg element14 Asia-Pacific 130 $10.65 $9.00
GDM21FB-D24-1KK Hirschmann Electronics GmbH & Co Kg Newark element14 130 $9.97 $5.94
MCVR 1.5/12-STF-3.81 BD:24-13 Phoenix Contact Chip1Stop 500 $8.56 $6.08

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BD241 datasheet (294)

Part Manufacturer Description Type PDF
BD241 Bourns NPN SILICON POWER TRANSISTORS Original PDF
BD241 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
BD241 On Semiconductor TRANSISTOR TRANSISTOR,BJT,NPN,45V V(BR)CEO,5A I(C),TO-220AB, BIP General Purpose Power Original PDF
BD241 Philips Semiconductors Silicon Epitaxial Base Power Transistors Original PDF
BD241 Power Innovations NPN SILICON POWER TRANSISTORS Original PDF
BD241 Boca Semiconductor COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSS Scan PDF
BD241 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
BD241 Continental Device India NPN PLASTIC POWER TRANSISTORS / PNP PLASTIC POWER TRANSISTORS Scan PDF
BD241 Continental Device India TO-220 NPN Power Package Transistors Scan PDF
BD241 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
BD241 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
BD241 Ferranti Semiconductors Power Transistors 1977 Scan PDF
BD241 General Electric Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 40W. Scan PDF
BD241 Micro Electronics NPN SILICON EPITAXIAL BASE POWER TRANSISTORS Scan PDF
BD241 Micro Electronics Semiconductor Device Data Book Scan PDF
BD241 Mospec Complementary Silicon Plastic Power Transistor Scan PDF
BD241 Mospec POWER TRANSISTORS(3A,40W) Scan PDF
BD241 Motorola European Master Selection Guide 1986 Scan PDF
BD241 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
BD241 Others Semiconductor Master Cross Reference Guide Scan PDF

BD241 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
B0241A

Abstract:
Text: BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS Copyright C 1997, Povwf InnovaUone Um , temperature (unless otherwise noted) RATINO BD241 CoHector-emitter voltage (Rgg = 100 Q) B0241A BD241B BD241C BD241 CoBector-emitter voltage (tc » 30 mA) BD241A BD241B BD241C Emitter-base voltage Continuous , MIN 45 60 80 100 BD241A BD241B BD241C BD241 BD241A BD241B BD241C BD241 /241A BD241B /241C TYP MAX , 2-17 BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997


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PDF BD241, BD241A, BD241B, BD241C BD242 O-220 BD241 B0241A BD241B NPN Transistor BD241 tpm300
BD241

Abstract:
Text: ) BD241B /BD242B BD241C /BD242C BD241 /BD242 BD241A /BD242A Collector-Emitter Voltage (RBE = 100 ) BD241B /BD242B BD241C /BD242C BD241 /BD242 BD241A /BD242A Emitter-Base Voltage (IC = 0) BD241B /BD242B BD241C /BD242C BD241 /BD242 BD241A /BD242A IC BD241B /BD242B BD241C /BD242C Collector Current BD241 /BD242 BD241A /BD242A ICM BD241B /BD242B BD241C /BD242C BD241 /BD242 BD241A /BD242A Base Current BD241B /BD242B BD241C /BD242C BD241 /BD242 @ Tamb BD241A /BD242A = 25° C BD241B /BD242B BD241C /BD242C Power Dissipation


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PDF BD241, BD242, O-220 BD241/BD242 BD241A/BD242A BD241B/BD242B BD241C/BD242C BD241 BD241C BD242 BD242C BD242A BD241A BD241B BD242/A/B/C
BD241C

Abstract:
Text: Collector-Emitter Voltage : BD241 VceO 45 V : BD241A 60 V : BD241B 80 V : BD241C 100 V Collector Emitter Voltage : BD241 VcER 55 V : BD241A 70 V : BD241B 90 V : BD241C 115 V Emitter Base Voltage Vebo 5 V , Voltage : BD241 Vceo(sus) lc= 30mA, lB= 0 45 V BD241A 60 V BD241B 80 V BD241C 100 V Collector Cutoff Current : BD241 /A IcEO Vce = 30V, lB=0 0.3 mA BD241B /C Vce = 60V, lB=0 0.3 mA Collector Cutoff Current : BD241 Ices Vce=45V, VBE=0 0.2 mA BD241A Vce=60V, Vbe=0 0.2 mA BD241B


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PDF BD241/A/B/C BD242/A/B/C BD241 BD241A BD241B BD241C BD241C BD241A NPN Transistor BD241 BD241B TRANSISTOR bd241
D241C

Abstract:
Text: Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C Collector Emitter Voltage : BD241 : BD241A : BD241B : BD241C Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector , : BD241 : BD241A : BD241B : B D241C Collector Cutoff Current : (Tc =25 ) Symbol V ceo( sus) Iq = , qe = 100V, V be = 0 Iebo h FE V eb = 5 V , Collector Cutoff Current : BD241A : : BD241B B , BD241 /A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS


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PDF BD241/A/B/C BD242/A/B/C BD241 BD241A BD241B BD241C D241C
B0242c

Abstract:
Text: ,V_= 0 ) (V.- 80V, V.," 0 ) (VCI= 100V.V,.= 0 ) BD241 .BD242 BD241A.BD242A BD241B.BD242B BD241C.BD242C BD241M2 /41A/42A BD241 B/42B/41 C/42C BD241 /42 BD241A /42A BD241 B/42B BD241C /42C , general purpose power amplifier and switching applications. NPN BD241 BD241A BD241B BD241C , 80V(Mln)- BD241B.BD242B 100V(Min)- BD241C.BD242C • DC Current Gain hFE= 25(Mn)eic- 1 ,OA , Symbol BD241 BD241A BD241B BD241C Unit BD242 BD242A BD242B B0242C Collector-Emitter Voltage VCEO


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PDF BD241 BD241A BD241B BD241C BD242 BD241A BD242A BD241B BD242B B0242c
BD241

Abstract:
Text: M AMER PHILIPS/DISCRETE - 2SE 5 ■L,bS3131 001^315 1 ■Il BD241 ; BD241A 11 BD241B ; BD241C , Respective Manufacturer N AMER PHILIPS/DISCRETE: BD241 ; BD241A BD241B ; BD241C r^/ j/i, Jl BSE D bbSB^i , bbSBTBl 00113^7 S ■BD241 ; BD241A BD241B ; BD241C T-33-11 3 MHz lon typ. 0,3 fis t0ff typ. 1 us , Manufacturer N AMER PHILIPS/DISCRETE 2SE D ■^53131 00113=10 7 BD241 ; BD241A II BD241B ; BD241C JI -y V_T , ■BD241 ; BD241A BD241B ; BD241C T-33-H 7Z88343 ~ 'cMma x — rô = I A l,UI 'Cmax


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PDF bS3131 BD241; BD241A BD241B; BD241C BD242; BD241 BD241A BD241 BD241B BD241C BD242
1973 - BD241

Abstract:
Text: BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations , BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 TYPICAL , Collector Current - A Figure 3. PRODUCT INFORMATION 3 BD241 , BD241A , BD241B , BD241C NPN , Temperature - °C Figure 5. PRODUCT 4 INFORMATION 125 150 BD241 , BD241A , BD241B , BD241C , Collector-emitter voltage (RBE = 100 ) BD241A BD241B VALUE VCER 70 90 BD241C 45 BD241A


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PDF BD241, BD241A, BD241B, BD241C BD242 O-220 BD241 BD241A BD241B BD241 BD241A BD241B BD241C bd242 TRANSISTOR equivalent
1973 - BD241

Abstract:
Text: BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS Designed for Complementary Use , subject to change without notice. 1 BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS , notice. 3 BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING , 1·0 0·1 BD241 BD241A BD241B BD241C 0·01 1·0 10 100 1000 VCE - , Collector-emitter voltage (RBE = 100 ) BD241B VCER 70 90 BD241C 45 BD241A BD241B V CEO 60


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PDF BD241, BD241A, BD241B, BD241C BD242 O-220 BD241B BD241A BD241 BD241A BD241B BD241C bd242 TRANSISTOR equivalent
Not Available

Abstract:
Text: Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C Collector Emitter Voltage : BD241 : BD241A : BD241B : BD241C Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current , itio ns Min Typ Max Unit 45 V : BD241A 60 V : BD241B 80 V , mA : BD241B V ce = 80V, V be = 0 0.2 mA : BD241C V ce = 100V, Vbe = 0 0.2 mA 1 mA Collector Cutoff Current : BD241 /A IcEO : BD241B /C Collector Cutoff Current


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PDF BD241/A/B/C BD242/A/B/C BD241 BD241A BD241B BD241C
2000 - transistor crossreference

Abstract:
Text: : BD241 : BD241A : BD241B : BD241C Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C , =25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD241 : BD241A : BD241B : BD241C Collector Cut-off Current Collector Cut-off Current : BD241 /A : BD241B /C : BD241 : BD241A : BD241B : BD241C Test Condition IC = - 30mA, IB = 0 Min. 45 60 80 100 0.3 0.3 0.2 0.2 0.2 0.2 1 , BD241 /A/B/C BD241 /A/B/C Medium Power Linear and Switching Applications · Complement to BD242/A


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PDF BD241/A/B/C BD242/A/B/C O-220 BD241 BD241A BD241B BD241C transistor crossreference NPN Transistor BD241 transistor cross reference BD241 bd241a TRANSISTOR b 115 fairchild
2002 - BD241

Abstract:
Text: =30mA, IB=0 ICEO BD241 /242 BD241A /242A BD241B /242B BD241C /242C VCE=30V, IB=0 Collector Cut off , 91-11-2579 6150 Fax + 91-11-2579 9569, 2579 5290 e-mail sales@cdil.com www.cdil.com www.cdilsemi.com BD241_242Rev_1 , Dissipation upto Ta=25ºC PD 2.0 W 16 mW/ºC DESCRIPTION BD241A BD242A BD241B BD242B , Certified Manufacturer PLASTIC POWER TRANSISTORS BD241 , A, B, C NPN BD242, A, B, C PNP TO , MAXIMUM RATINGS (Ta=25ºC) SYMBOL BD241 BD242 Collector Emitter Voltage VCEO 45 Collector


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PDF BD241, BD242, O-220 BD241 BD242 C-120 242Rev 141102E BD241 BD241A BD241B BD241C BD242 BD242A BD242B BD242C BD242C CDIL
BD241

Abstract:
Text: BD241 VCBO Collector-base voltage BD241A VALUE 55 Open emitter 70 BD241B Collector-emitter voltage 115 BD241 45 BD241A Open base 60 BD241B Emitter-base voltage V , =0 V BD241B 80 BD241C VCEsat MAX 45 BD241A TYP. 100 Collector-emitter , V ICEO Collector cut-off current 0.3 mA 0.2 mA 1 mA BD241 /A BD241B /C VCE=60V; IB=0 BD241 VCE=45V; VBE=0 BD241A VCE=60V; VBE=0 BD241B VCE=80V; VBE


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PDF BD241/A/B/C O-220C BD242/A/B/C BD241 BD241A BD241B BD241C BD241 BD241C BD241A BD241B
BD241

Abstract:
Text: G IRANSYS ELECTRONICS LIMITED BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS , BD241 55 BD241A 70 Collector-emitter voltage (RBE = 100 Q) BD241B VCER 90 V BD241C 115 BD241 45 BD241A 60 Collector-emitter voltage (lc = 30 mA) BD241B VCEO 80 V BD241C 100 , Q, Vcc = 20 V. BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS electrical , Current - A Figure 3. BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE


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PDF BD241, BD241A, BD241B, BD241C BD242 O-220 BD241 BD241A BD241B BD241 BD241A BD241C bd242 TRANSISTOR
1973 - Not Available

Abstract:
Text: BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with , BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case , subject to change without notice. BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS , BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS , 0·1 BD241 BD241A BD241B BD241C E T E L O S B O 0·01 1·0 10 100 1000


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PDF BD241, BD241A, BD241B, BD241C BD242 O-220 BD241 BD241A
1973 - BD241B

Abstract:
Text: BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with , Collector-emitter voltage (IC = 30 mA) Emitter-base voltage BD241A BD241 BD241B BD241C BD241B Continuous , . 1 BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS electrical characteristics at 25 , V V IB = 0 BD241A BD241B BD241C BD241 BD241A BD241B BD241C BD241 /241A BD241B /241C MIN 45 60 80 100 , Specifications are subject to change without notice. BD241 , BD241A , BD241B , BD241C NPN SILICON POWER


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PDF BD241, BD241A, BD241B, BD241C BD242 O-220 BD241A BD241 BD241B
1973 - Not Available

Abstract:
Text: BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with , are subject to change without notice. 3 BD241 , BD241A , BD241B , BD241C NPN SILICON POWER , 0.1 = 10% DC Operation 10 1·0 0·1 BD241 BD241A BD241B BD241C 0·01 1·0 10 , „¦) BD241A BD241B VALUE 55 VCER 70 90 BD241C 45 BD241A BD241B V CEO BD241C , , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case


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PDF BD241, BD241A, BD241B, BD241C BD242 O-220 BD241 BD241A BD241B
BD241

Abstract:
Text: 0.3 mA BD241 /A VCE=30V; IB=0 BD241B /C BD241 ICES VCE=45V; VBE=0 BD241A , BD241 Collector-base voltage HAN INC Open emitter BD241B VALUE 70 V 90 115 BD241 45 Collector-emitter voltage 60 Open base V BD241B Emitter-base voltage 80 BD241C VEBO UNIT 55 BD241C BD241A VCEO OND EMIC GE S BD241A VCBO CONDITIONS , ) Collector-emitter sustaining voltage UNIT 60 IC=30mA; IB=0 V BD241B 80 BD241C VCEsat MAX


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PDF BD241/A/B/C O-220C BD242/A/B/C BD241 BD241B BD241C BD241A BD241 BD242/A/B/C BD241B BD241C BD241A
BD241

Abstract:
Text: ollecto r E m itter Voltage BD241 BD241A BD241B BD241C C ollecto r E m itter Voltage BD241 BD241A BD241B BD241C E m itter Base Voltage C o lle cto r C urrent (DC) C o lle cto r C urrent (Pulse) Base Current C o , CHARACTERISTICS rr-25 °c) Characteristic 'C o lle c to r E m itter S ustaining Voltage BD241 BD241A BD241B BD241C BD241 /A BD241B /C BD241 BD241A BD241B BD241C Symbol V c e o (S U S ) Test Condition lc = 30mA, Iq = 0 , BD241 /A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS


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PDF BD241/A/B/C BD242/A/B/C BD241 BD241A BD241B BD241C
Not Available

Abstract:
Text: File N um ber 671 BD241 , BD241A , BD241B , BD241C Epitaxial-Base Silicon N-P-N VERSAWATT , Types BD241 , B D 241A , BD 241B, and BD241C are epitaxial- BD241 , BD241A , BD241B , BD241C ELECTRICAL , BD241 , BD241A , BD241B , BD241C F ig . 1- M a x im u m sa fe o p e ra tin g areas f o r a ll type s , 90 80 5 5 1 40 2 115 100 5 5 1 40 2 V V V A A W W BD241A BD241B BD241C - See Fig. 2 , r0ja ms, LIM ITS BD241 M IN . _ - CURRENT A dc *C BD241A M IN . _ - BD241B M IN . -


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PDF BD241, BD241A, BD241B, BD241C BD242B, BD242C BD241
2000 - BD241

Abstract:
Text: =25°C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C Collector-Emitter Voltage : BD241 : BD241A : BD241B : BD241C Emitter-Base Voltage Collector , Sustaining Voltage : BD241 : BD241A : BD241B : BD241C Collector Cut-off Current Collector Cut-off Current : BD241 /A : BD241B /C : BD241 : BD241A : BD241B : BD241C Test Condition IC = - 30mA, IB = 0 Min. 45 60 80 , BD241 /A/B/C BD241 /A/B/C Medium Power Linear and Switching Applications · Complement to BD242/A


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PDF BD241/A/B/C BD242/A/B/C O-220 BD241 BD241A BD241B BD241C BD241
BD24IC

Abstract:
Text: Power Transistors File Number 671 BD241 , BD241A , BD241B , BD241C Epitaxial-Base Silicon N-P-N VERSAWATT , types BD242, BD242A, BD242B, and BD242C Types BD241 , BD241A , BD241B , and BD241C are epitaxial-base , RATINGS, Absolute-Maximum Values: BD241 BD241A BD241B BD241C COLLECTOR-TO-EMITTER VOLTAGE: With external , Electron Power Transistors _ 0 1 E 17531 T-33-II BD241 , BD241 A, BD241B , BD241C ELECTRICAL , Transistors BD241 , BD241 A, BD241B , BD241C [ vCCO MAX. »45 V (80241) Vcco MAX. • 60V (B0241A) IVcEO


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PDF 13A7S0Ã 0017S3D BD241, BD241A, BD241B, BD241C BD242, BD242A, BD242B, BD242C BD24IC B0241A BD24IB BOZ41A 80241c BD242S BD241B T0-22QAB BD241C BD242A
bd241

Abstract:
Text: Collector-Emitter Voltage: BD241 : BD241A . BD241B . BD241C Collector Emitter Voltage : BD241 : BD241A : BD241B : BD241C Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector , 45 60 80 100 Typ Max Unit V V BD241A BD241B BD241C Collector Cutoff Current Collector Cutoff Current BD241 /A BD241B /C BD241 BD241A BD241B BD241C Emitter Cutoff Current *DC Current Gain , BD241 /A/B/C NPN EPITAXIAL SILICO N TRAN SISTO R MEDIUM POW ER LINEAR AND SWITCHING


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PDF BD241/A/B/C BD242/A/B/C BD241 BD241A BD241B BD241C bd241
Not Available

Abstract:
Text: BD241 , BD241A , BD241B , and BD241C are epitaxialbase silicon n-p-n transistors; they differ only in their , SbE D ■H3Q2271 DD40bb2 733 « H A S BD241 , BD241A , BD241B , BD241C rrrTftB HARRIS SEMICON , M I C O N D SE CT OR BD241 , BD241A , BD241B , BD241C 5bE » 43 G2 27 1 D D 4 0 b b 3 b7T H H , SbE D File Number ■43 02 57 1 DO MD bb l AT? H H A S 671 BD241 , BD241A , BD241B , BD241-series power transistors are complements of the devices in the BD242 series. (The BD242-series devices


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PDF BD241, BD241A, BD241B, BD241C BD242, BD242A, BD242B, BD242C
B0242

Abstract:
Text: Q0flM72fi M | BD241 , BD241A , BD241B , BD241C NPN BD242, BD242A, BD242B, BD242C PNP J~ 3 . D ' , CE a 60 Vdc, l B “ 0) BD241 , BD242 BD241A , BD242A BD241B , BD242B BD241C , BD242C Vdc mAdc 'CEO 0.3 0.3 BD241 , BD241A , BD242, B0242A. BD241B , BD241C , BD242B, BD242C Collector C , XSTRS/R F 15E D | fc,3fc,72S4 000472*1 b | BD241 , BD241A , BD241B , BD241C NPN BD242, BD242A , BD241A BD241B BD241C MOTOROLA BD242 BD242A BD242B BD242C . . . designed for use in general


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PDF BD241 BD241A BD241B BD241C BD242 BD242A BD242B BD242C BD241, B0242
Not Available

Abstract:
Text: BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS Copyright© 1997, Power Innovations , ) RATING BD241 Collector-emitter voltage (RBE = 100 £2) BD241A BD241B BD241C BD241 Collector-emitter , . BD241 , BD241A , BD241B , BD241C NPN SILICON POWER TRANSISTORS JUNE 1973 - REVISED MARCH 1997 , ) > > lB = BD241A o BD241B BD241C O BD241 BD241A BD241B BD241C BD241 /241A BD241B /241C V , , dc < 2% MIN TYP 0.3 1 MAX UNIT |JS |JS 2 BD241 , BD241A , BD241B , BD241C NPN


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PDF BD241, BD241A, BD241B, BD241C BD242 T0-220 BD241 BD241A BD241B
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