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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BD139 STMicroelectronics Avnet 20,000 $0.22 $0.17
BD139 Chip One Exchange 28 - -
BD139 STMicroelectronics Rutronik - $0.14 $0.10
BD139 STMicroelectronics New Advantage Corporation 50 - -
BD139 STMicroelectronics Rutronik - $0.15 $0.11
BD139 STMicroelectronics Newark element14 11,350 $0.60 $0.13
BD139 STMicroelectronics Avnet 17,990 €0.10 €0.05
BD139 STMicroelectronics ComS.I.T. 150 - -
BD139 STMicroelectronics RS Components 22,551 £0.96 £0.20
BD139 STMicroelectronics element14 Asia-Pacific 22,014 $0.95 $0.31
BD139 STMicroelectronics Farnell element14 21,610 £0.27 £0.22
BD139 STMicroelectronics Future Electronics 1,060 $0.41 $0.32
BD139-10 STMicroelectronics Chip1Stop 460 $0.16 $0.16
BD139-10 SPC Multicomp Farnell element14 2,549 £0.36 £0.10
BD139-10 SPC Multicomp element14 Asia-Pacific 3,508 $0.29 $0.12
BD139-10 STMicroelectronics element14 Asia-Pacific 4,000 $0.69 $0.18
BD139-10 STMicroelectronics Avnet 8,000 €0.11 €0.11
BD139-10 STMicroelectronics Rutronik - $0.13 $0.13
BD139-10 Fairchild Semiconductor Corporation Chip One Exchange 240 - -
BD139-10 STMicroelectronics Chip1Stop 16,460 $0.25 $0.12
BD139-10 STMicroelectronics RS Components 1,750 £0.24 £0.15
BD139-10 SPC Multicomp Newark element14 2,399 $0.31 $0.07
BD139-16 STMicroelectronics Future Electronics - $0.18 $0.14
BD139-16 STMicroelectronics RS Components 1,480 £0.31 £0.20
BD139-16 STMicroelectronics element14 Asia-Pacific - $0.69 $0.23
BD139-16 STMicroelectronics Chip1Stop 15,016 $0.16 $0.08
BD139-16 STMicroelectronics New Advantage Corporation 1,550 $0.08 $0.08
BD139-16 STMicroelectronics Rutronik - $0.16 $0.12
BD13910S ON Semiconductor Future Electronics - $0.24 $0.23
BD13910S Fairchild Semiconductor Corporation Rochester Electronics 4,494 $0.27 $0.22
BD13910S Fairchild Semiconductor Corporation New Advantage Corporation 48,000 $0.27 $0.24
BD13910STU ON Semiconductor Farnell element14 1,165 £0.34 £0.14
BD13910STU ON Semiconductor RS Components 1,740 £0.32 £0.14
BD13910STU ON Semiconductor Chip1Stop 176 $0.87 $0.28
BD13910STU ON Semiconductor Newark element14 1,158 $0.47 $0.14
BD13910STU Fairchild Semiconductor Corporation Rochester Electronics 136,584 $0.27 $0.22
BD13910STU ON Semiconductor element14 Asia-Pacific 1,155 $0.74 $0.21
BD13916 Philips E C G Inc ComS.I.T. 114 - -
BD13916S ON Semiconductor Newark element14 4 $0.57 $0.19
BD13916S ON Semiconductor Avnet 1,000 €0.23 €0.13
BD13916S ON Semiconductor Chip1Stop 3,789 $0.23 $0.14
BD13916S ON Semiconductor Avnet 2,447 $0.23 $0.14
BD13916S ON Semiconductor Farnell element14 - £0.34 £0.14
BD13916S ON Semiconductor Future Electronics - $0.13 $0.12
BD13916S ON Semiconductor element14 Asia-Pacific - $0.72 $0.20
BD13916STU ON Semiconductor Future Electronics - $0.24 $0.20
BD13916STU ON Semiconductor Farnell element14 - £0.35 £0.16
BD13916STU Fairchild Semiconductor Corporation Rochester Electronics 323,255 $0.29 $0.24
BD1396STU ON Semiconductor Future Electronics - $0.17 $0.14
BD1396STU Fairchild Semiconductor Corporation Rochester Electronics 28,800 $0.27 $0.22
BD1396STU ON Semiconductor Newark element14 53 $0.58 $0.20
BD1396STU ON Semiconductor Farnell element14 53 £0.39 £0.16
BD1396STU. Fairchild Semiconductor Corporation Newark element14 769 $0.58 $0.20
BD139G ON Semiconductor Allied Electronics & Automation - $0.52 $0.51
BD139G ON Semiconductor RS Components 2,660 £0.27 £0.16
BD139G ON SEMICONDUCTOR New Advantage Corporation 1,800 $0.45 $0.41
BD139G ON Semiconductor Chip1Stop 2,378 $0.34 $0.19
BD139G ON Semiconductor Rochester Electronics 22,531 $0.31 $0.25
BD139G ON Semiconductor RS Components 380 £0.36 £0.16
BD139G ON Semiconductor Wuhan P&S 130 $0.34 $0.22
BD139G ON Semiconductor Chip One Exchange 1,665 - -
BD139G ON Semiconductor Avnet 3,900 €0.38 €0.14
NJVBD139G ON Semiconductor Rochester Electronics 6,000 - -
TBD139.10 Continental Device India Ltd Schukat electronic 2,850 €0.15 €0.06

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BD139 datasheet (119)

Part Manufacturer Description Type PDF
BD139 Central Semiconductor Leaded Power Transistor General Purpose Original PDF
BD139 Fairchild Semiconductor NPN Epitaxial Silicon Transistor - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original PDF
BD139 Motorola Plastic Medium Power Silicon NPN Transistor - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original PDF
BD139 On Semiconductor Plastic Medium Power Silicon NPN Transistor Original PDF
BD139 Philips Semiconductors NPN POWER TRANSISTORS - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original PDF
BD139 Philips Semiconductors NPN power transistors - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original PDF
BD139 Philips Semiconductors NPN GENERAL PURPOSE POWER TRANSISTORS Original PDF
BD139 Philips Semiconductors Silicon Planar Epitaxial Power Transistors Original PDF
BD139 Siemens Cross Reference Guide 1998 Original PDF
BD139 STMicroelectronics Complementary low voltage transistor Original PDF
BD139 STMicroelectronics NPN SILICON TRANSISTORS - Pol=NPN / Pkg=TO126 / Vceo=80 / Ic=1 / Hfe=40-160 / fT(Hz)=- / Pwr(W)=6.5 Original PDF
BD139 Various Russian Datasheets Transistor Original PDF
BD139 Continental Device India NPN Plastic Power Transistor Scan PDF
BD139 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
BD139 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
BD139 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
BD139 Motorola Motorola Transistor Datasheets Scan PDF
BD139 Motorola The European Selection Data Book 1976 Scan PDF
BD139 Motorola European Master Selection Guide 1986 Scan PDF
BD139 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF

BD139 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
BD139

Abstract: BD140 BD139 application BD140 application circuits circuits BD139 NPN transistor BD136 TRANSISTOR NPN BD140 BD140 npn BD135 of ic BD140
Text: BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139-10 BD139-10 BD139-16 BD139-16 BD140 BD140 BD140-10 BD140-10 BD140-16 Package , , VCE = -2 V 25 40 25 250 NPN IC = 150 mA, VCE = 2 V BD139-10 BD135-16/ BD139-16 63 , BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are , and BD139 , and the complementary PNP types are the BD136 and BD140. Figure 1. Internal


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PDF BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD140 BD139 application BD140 application circuits circuits BD139 NPN transistor BD136 TRANSISTOR NPN BD140 BD140 npn of ic BD140
2006 - BD139

Abstract: bd137 BD135-BD137-BD139 BD139 application bd135
Text: !"# BD135 BD137 BD139 )HDWXUHV · · · · 0D[LPXP5DWLQJV Rating Collector-Emitter Voltage , = 40 (Min) @IC = 150mAdc Complementary with BD136, BD138, BD140 Symbol BD135 BD137 BD139 VCEO Value , Silicon 45,60,80 Volts TO-126 A K Collector-Base Voltage BD135 BD137 BD139 Emitter-Base Voltage , Voltage* (IC=30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC , BD135 BD137 BD139 MCC TM Micro Commercial Components 10.0 IC, COLLECTOR CURRENT (AMP) 5.0 2.0


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PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 BD135-BD137-BD139 BD139 application
2008 - BD135 CURVES

Abstract: BD140 application circuits circuits BD139 TRANSISTOR NPN BD140 BD139 application BD140 TRANSISTOR NPN BD139 BD136 transistor BD135 BD140 npn
Text: BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139-10 BD139-10 BD139-16 BD139-16 BD140 BD140 BD140-10 BD140-10 BD140-16 BD140-16 Rev , IC = 150 mA, VCE = 2 V BD139-10 BD135-16/ BD139-16 63 100 160 250 PNP IEBO 0.1 10 , BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are , and BD139 , and the complementary PNP types are the BD136 and BD140. Figure 1. Internal


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PDF BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD135 CURVES BD140 application circuits circuits TRANSISTOR NPN BD140 BD139 application BD140 TRANSISTOR NPN BD139 BD136 transistor BD135 BD140 npn
2002 - power transistor bd139

Abstract: BD139 transistor BD139 amplifier power transistor bd137 transistor bd137 TRANSISTOR BD139 TRANSISTOR NPN BD139 power transistor bd135 BD139 BD139 NPN transistor download datasheet
Text: 25 40 160 25 BD135-10 BD137-10 BD139-10 MIN MAX 63 160 BD135-16 BD137-16 BD139-16 , =150mA 40 250 hFE VCE=2.0V, IC=500mA 25 SYMBOL hFE TEST CONDITIONS VCE=2.0V, IC=150mA BD139 80 80 BD135-6 BD137-6 BD139-6 MIN MAX 40 100 UNIT V V V A A A W W °C °C/W °C/W , DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed


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PDF BD135 BD137 BD139 O-126 BD135, BD137, BD139 CHARACTERISTI10 power transistor bd139 BD139 transistor BD139 amplifier power transistor bd137 transistor bd137 TRANSISTOR BD139 TRANSISTOR NPN BD139 power transistor bd135 BD139 NPN transistor download datasheet
2006 - bd139

Abstract: bd139 application note
Text: MCC BD135 BD137 BD139   omponents 20736 Marilla Street Chatsworth , [LPXP5DWLQJV Rating Collector-Emitter Voltage Symbol BD135 BD137 BD139 Value VCEO  Unit 45 60 80  K A Vdc N Collector-Base Voltage BD135 BD137 BD139 , Collector-Emitter Sustaining Voltage* (IC=30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE , BD135 BD137 BD139 TM Micro Commercial Components IC, COLLECTOR CURRENT (AMP) 10.0 5.0 5


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PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 bd139 bd139 application note
bd139

Abstract: M/triac bd139 bd135
Text: BD135 BD139 NPN SILICON TRANSISTORS ■STMicraelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package , ICM BD139 45 80 V 45 80 V V A 3 C o lle c to r P e a k C u rre n t 5 , e ra tin g J u n c tio n T e m p e ra tu re 1/4 BD135/ BD139 THERMAL DATA R e s is ta n c e , BD139 80 = 0 .0 5 A 0.5 V = 2 V 1 V lc = 0.5 A V ce h F E* DC C u rre n


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PDF BD135 BD139 BD135 BD139 OT-32 BD136 BD140 BD135/ M/triac bd139
8D139

Abstract: bdxxx BDL39 BD139 BD137 Transistor 80139 power transistor bd137 BD135 bd139 bd140 power transistor bd139
Text: BD135 BD137 BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose n-p-n , circuits. The BD136, BD138 and BD140 are complementary to the BD135, BD137 and BD139 respectively. QUICK , 0034255 35ô ill BD135 BD137 BD139 yv. RATINGS Limiting values in accordance with the Absolute , . current gain ratio of matched pairs BD135/BD136; BD137/BD138; BD139 /BD140 |ICl=150 mA;|VcEl = 2V BD135 BD137 BD139 max. 45 60 100 V max. 45 60 80 V max. 45 60 100 V max. 5 5 5 V max. 1,5 1,5 1,5 A max


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PDF BD135 BD137 BD139 OT-32 BD136, BD138 BD140 BD135, BD137 BD139 8D139 bdxxx BDL39 Transistor 80139 power transistor bd137 BD135 bd139 bd140 power transistor bd139
2008 - BD139

Abstract: BD139-10 bd140-10
Text: BD135 BD135-16 BD135-16 BD136 BD136 BD136-16 BD136-16 BD139 BD139 BD139-10 BD139-10 BD139-16 BD139-16 BD140 BD140 BD140-10 BD140-10 BD140-16 BD140 , IC = 150 mA, VCE = 2 V BD139-10 BD135-16/ BD139-16 63 100 160 250 PNP Emitter cut-off , BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features I Products are , and BD139 , and the complementary PNP types are the BD136 and BD140. Figure 1. Internal


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PDF BD135 BD136 BD139 BD140 OT-32 OT-32 BD139, BD140. BD139-10 bd140-10
2003 - transistor BD139 N

Abstract: power transistor bd139 BD139 amplifier BD137-16 TRANSISTOR NPN BD139 BD139 BD139 N BD135-10 to126 case BD137-10
Text: 25 190 TYP BD135-10 BD137-10 BD139-10 MIN MAX 63 160 TEST CONDITIONS VCE=2.0V, IC=150mA BD139 100 80 UNIT V V V A A A A W W °C °C/W °C/W BD139 MIN MAX 100 10 100 80 0.5 1.0 40 63 250 25 190 TYP UNIT nA µA nA V V V MHz BD135-16 BD137-16 BD139-16 , DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed


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PDF BD135 BD137 BD139 O-126 BD135, BD137, BD139 Tmb70 transistor BD139 N power transistor bd139 BD139 amplifier BD137-16 TRANSISTOR NPN BD139 BD139 N BD135-10 to126 case BD137-10
2009 - bd139

Abstract: bd137 bd135 power transistor bd139 transistor bd137 BD139 amplifier BD139 NPN transistor power transistor bd137 TRANSISTOR NPN BD139 bd137 Transistor
Text: =100MHz 190 SYMBOL TEST CONDITIONS hFE VCE=2.0V, IC=500mA BD135-10 BD137-10 BD139-10 MIN MAX 63 160 BD135-16 BD137-16 BD139-16 MIN MAX 100 250 MHz R3 (18-September 2009) Central TM Semiconductor , BD135 BD137 BD139 NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors , Resistance SYMBOL BD135 BD137 BD139 VCBO 45 60 100 VCEO 45 60 80 VEBO 5.0 IC 1.5 ICM 2.0 IB 0.5 IBM 1.0 PD


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PDF BD135 BD137 BD139 BD135, BD137, O-126 Tmb70 power transistor bd139 transistor bd137 BD139 amplifier BD139 NPN transistor power transistor bd137 TRANSISTOR NPN BD139 bd137 Transistor
2014 - BD139

Abstract: No abstract text available
Text: =2.0V, IC=500mA BD135-10 BD137-10 BD139-10 MIN MAX 63 160 MAX 100 10 100 0.5 1.0 UNITS , BD135-16 BD137-16 BD139-16 MIN MAX 100 250 R4 (13-March 2014) BD135 BD137 BD139 SILICON , BD135 BD137 BD139 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are silicon NPN epitaxial planar transistors , (SAT) VBE(ON) hFE hFE hFE fT SYMBOL hFE BD135 45 45 BD137 BD139 60 100 60 80 5.0


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PDF BD135 BD137 BD139 BD135, BD137, BD139 O-126 BD137) BD139) 500mA,
8D139

Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 transistor a110 TRANSISTOR BD 137-10 B0137 D106-V2 BD135
Text: , BD139-10 Collector cutoff current versus temperature kaO ~ '(T'amh) nA BD135, BD137, BD139 ras 150 , BD135, BD137, BD139 14 Permissible pulse load Jt. rthjc = f (t); v= parameter W BD136, BD137. BD139 , range . Ic = f(Vce);Tea« = 60°C;v = 0 A B D 135, BD137, BD139 Collector current Ic = f (VBE) VCE = 2 , configuration) mA BD135, BD137. BD139 10lr Base-emitter saturation voltage v0EMt=f(jy hn =10; ramb = parameter (common emitter configuration) mA BD136, BD137. BD139 Vf 0 02 0,4 Q6 0,8 10 12V -"-"cEsot 1758


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PDF fl23SbQS 135/BD 137/BD BD135, B0137, B0139 BD137, BD139 BD136. 8D139 bd139 B0139 TRANSISTOR BD 137 transistor BD 378 transistor a110 TRANSISTOR BD 137-10 B0137 D106-V2 BD135
2002 - BD139

Abstract: BD139 N bd137 BD139-25 BD139 p BD135-BD137-BD139 bd135 N BD139 silicon transistors
Text: MCC )HDWXUHV omponents 21201 Itasca Street Chatsworth !"# $ % !"# BD135 BD137 BD139 , [LPXP5DWLQJV Rating Collector-Emitter Voltage BD135 BD137 BD139 Collector-Base Voltage BD135 BD137 BD139 , =30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC=125 ) Emitter , BD137 BD139 MCC 10.0 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 TJ = 125°C 5 ms dc 0.5 ms 0.1 ms 0.1 0.05 0.02 0.01 1 BD135 BD137 BD139 2 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 80


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PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 BD139 N BD139-25 BD139 p BD135-BD137-BD139 bd135 N BD139 silicon transistors
2001 - BD135 BD139

Abstract: bd139 CIRCUIT DIAGRAM OF BD139 CIRCUIT DIAGRAM OF BD135 BD135 bd139 equivalent bd139 data sheet BD139 transistor BD139 datasheet BD139 NPN transistor download datasheet
Text: BD135 BD139 ® NPN SILICON TRANSISTORS T ype Marking BD135 BD135 BD135-10 BD135-10 BD135-16 BD135-16 BD139 BD139-10 BD139-16 s BD139 BD139-10 BD139-16 STMicroelectronics PREFERRED SALESTYPES 3 DESCRIPTION The BD135 and BD139 are silicon Epitaxial Planar NPN , Value BD135 Uni t BD139 V CBO Collector-Base Voltage (IE = 0) 45 80 V V CEO , 1.25 W -65 to 150 o C 150 o C 1/4 BD135 / BD139 THERMAL DATA R t hj-ca se


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PDF BD135 BD139 BD135-10 BD135-16 BD139-10 BD135 BD139 bd139 CIRCUIT DIAGRAM OF BD139 CIRCUIT DIAGRAM OF BD135 BD135 bd139 equivalent bd139 data sheet BD139 transistor BD139 datasheet BD139 NPN transistor download datasheet
2001 - BD139

Abstract: BD135 of bd139 CIRCUIT DIAGRAM OF BD139 CIRCUIT DIAGRAM OF BD135 BD139 amplifier BD139 p BD135-10 transistor BD140 BD139 NPN transistor download datasheet
Text: BD135 BD139 ® NPN SILICON TRANSISTORS Type Marking BD135 BD135 BD135-10 BD135-10 BD135-16 BD135-16 BD139 BD139-10 BD139-16 s BD139 BD139-10 BD139-16 STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon Epitaxial Planar NPN , Value BD135 Unit BD139 V CBO Collector-Base Voltage (I E = 0) 45 80 V V CEO , -65 to 150 o C 150 o C 1/4 BD135 / BD139 THERMAL DATA R thj-case Thermal


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PDF BD135 BD139 BD135-10 BD135-16 BD139-10 BD139 BD135 of bd139 CIRCUIT DIAGRAM OF BD139 CIRCUIT DIAGRAM OF BD135 BD139 amplifier BD139 p BD135-10 transistor BD140 BD139 NPN transistor download datasheet
2002 - Not Available

Abstract: No abstract text available
Text: 80 80 BD135-6 BD137-6 BD139-6 MIN MAX 40 100 UNIT V V V A A A A W W °C °C/W , 10 100 80 0.5 1.0 25 40 160 25 190 TYP BD135-10 BD137-10 BD139-10 MIN MAX 63 160 BD135-16 BD137-16 BD139-16 MIN MAX 100 250 UNIT nA µA nA V V V MHz (SEE REVERSE , DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137, and BD139 types are NPN Silicon Epitaxial Planar Transistors designed


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PDF BD135 BD137 BD139 O-126 BD135, BD137, BD139 BD135-10
2002 - BD139 N

Abstract: BD139 bd137 BD135,BD137,BD139 bd135 N BD135 power transistor bd135 BD135-BD137-BD139 BD139 silicon transistors BD139 p
Text: MCC BD135 BD137 BD139 omponents 20736 Marilla Street Chatsworth !"# $ % !"# , Voltage Symbol BD135 BD137 BD139 Value Unit 45 60 80 VCEO TO-126 Vdc A K Collector-Base Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current Base Current Total Device , BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC=125 ) Emitter Cutoff , www.mccsemi.com Revision: 2 2003/04/30 MCC BD135 BD137 BD139 IC, COLLECTOR CURRENT (AMP) 10.0


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PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 N BD139 bd137 BD135,BD137,BD139 bd135 N BD135 power transistor bd135 BD135-BD137-BD139 BD139 silicon transistors BD139 p
2002 - bd139

Abstract: BD135-BD137-BD139 bd137 BD139 N BD139 p bd135 N BD139-25
Text: MCC )HDWXUHV omponents 21201 Itasca Street Chatsworth !"# $ % !"# BD135 BD137 BD139 , [LPXP5DWLQJV Rating Collector-Emitter Voltage BD135 BD137 BD139 Collector-Base Voltage BD135 BD137 BD139 , =30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC=125 ) Emitter , 300 µsec, Duty cycle 2% www.mccsemi.com BD135 BD137 BD139 MCC 10.0 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 TJ = 125°C 5 ms dc 0.5 ms 0.1 ms 0.1 0.05 0.02 0.01 1 BD135 BD137 BD139 2 5 10


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PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 BD135-BD137-BD139 BD139 N BD139 p bd135 N BD139-25
1997 - BD139

Abstract: CIRCUIT DIAGRAM OF BD139 bd139 sot 32 BD139 NPN BD139I BD137 BD138 BD136 bd135 diagram transistor BD140
Text: BD135 BD137/ BD139 NPN SILICON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic , SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BD135 BD137 Uni t BD139 , W -65 to 150 o C 150 o C 1/4 BD135 / BD137 / BD139 THERMAL DATA R t hj-ca , . Collector-Emitter Saturation Voltage I C = 30 mA for BD135 for BD137 for BD139 I C = 0.5 A Un it µA µA


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PDF BD135 BD137/BD139 BD135, BD137 BD139 OT-32 BD136 BD138 BD140. CIRCUIT DIAGRAM OF BD139 bd139 sot 32 BD139 NPN BD139I BD136 bd135 diagram transistor BD140
2002 - BD139 N

Abstract: BD135,BD137,BD139 BD139 bd135 N BD137 BD135-BD137-BD139 BD135 power transistor bd135 power transistor bd137 power transistor bd139
Text: BD135 BD137 BD139 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax , Collector-Emitter Voltage Symbol BD135 BD137 BD139 Value Unit 45 60 80 VCEO TO-126 Vdc A K Collector-Base Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current Base , ) Collector-Emitter Sustaining Voltage* (IC=30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE , BD135 BD137 BD139 IC, COLLECTOR CURRENT (AMP) 10.0 5.0 5 ms 2.0 1.0 TJ = 125°C 0.5


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PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 N BD135,BD137,BD139 BD139 bd135 N BD137 BD135-BD137-BD139 BD135 power transistor bd135 power transistor bd137 power transistor bd139
transistor bd137

Abstract: BD139 BD139 NPN power transistor bd135 power transistor bd139 BD139 NPN transistor BD139 TRANSISTOR BD135 NPN transistor power transistor bd137 bd137
Text: BD135/BD137/ BD139 (NPN) TO-126 Transistor TO-126 7.400 7.800 1. EMITTER 3.000 2.500 , Temperature Dimensions in inches and (millimeters) Value BD137 60 60 5 1.5 1.25 150 -55-150 BD139 80 80 V V , V V V µA µA V V Collector-base breakdown voltage V(BR)CBO Ic=100µA,IE=0 BD137 BD139 BD135 Collector-emitter breakdown voltage V(BR)CEO* Ic=30mA,IB=0 BD137 BD139 Emitter-base , 16 100-250 BD135/BD137/ BD139 (NPN) TO-126 Transistor Typical Characteristics -


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PDF BD135/BD137/BD139 O-126 O-126 BD135 BD137 BD139 transistor bd137 BD139 NPN power transistor bd135 power transistor bd139 BD139 NPN transistor BD139 TRANSISTOR BD135 NPN transistor power transistor bd137
2006 - bd139 pin out

Abstract: BD139 application BD139 N BD139 bd135 n power transistor bd139 bd140
Text: MCC BD135 BD137 BD139 omponents 20736 Marilla Street Chatsworth !"# $ % !"# , Rating Collector-Emitter Voltage Symbol BD135 BD137 BD139 Value 45 60 80 VCEO Unit K A Vdc N Collector-Base Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector , =30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC , 2008/01/01 MCC BD135 BD137 BD139 TM Micro Commercial Components IC, COLLECTOR CURRENT


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PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 bd139 pin out BD139 application BD139 N BD139 bd135 n power transistor bd139 bd140
2005 - Not Available

Abstract: No abstract text available
Text: /BD137/ BD139 TRANSISTOR(NPN) TO-126 FEATURES ·High Current(1.5A) 1. EMITTER ·Low , Value Parameter Units BD135 BD137 BD139 VCBO Collector-Base Voltage 45 60 , =0 60 BD139 Collector-emitter breakdown voltage BD137 BD135 V(BR)CBO MAX 45 BD139 Collector-base breakdown voltage TYP 80 V V V(BR)EBO IE=100µA,IC , 40-100 63-160 100-250 Typical Characteristics BD135/BD137/ BD139 Jiangsu Changjiang


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PDF O-126 BD135/BD137/BD139 O-126 BD135 BD137 BD139 150mA
BD139

Abstract: BD137 philips power transistor bd139 BD139 philips BD135-BD137-BD139 BD135-10 BD139 PIN DATA BD137-10 BD139 circuits BD135-16
Text: 0.5 1 1.6 V V MHz 250 h FE DC current gain BD135-10; BD137-10: BD139-10 BD135-16; BD137-16; BD139-16 collector-emitter saturation voltage base-emitter voltage transition Irequency DC current gain , (max. 1.5 A) · Low voltage (max. 80 V). BD135; BD137; BD139 PINNING PIN 1 2 emitter collector , BD139 collector-emitter voltage BD135 BD137 BD139 peak collector current total powei dissipation DC , Absolute Maximum Rating System (IEC 134). BD135; BD137; BD139 SYMBOL VcBO PARAMETER


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PDF BD135; BD137; BD139 O-126; BD136, BD138 BD140. BD135 BD137 BD139 philips power transistor bd139 BD139 philips BD135-BD137-BD139 BD135-10 BD139 PIN DATA BD137-10 BD139 circuits BD135-16
1997 - bd139 application note

Abstract: power transistor bd139 to 220 BD135 philips philips power transistor bd139 BD139 philips BD139 Philips Bd139 BD139 application TRANSISTOR NPN BD139 BD137
Text: - - BD135-10; BD137-10; BD139-10 63 - 160 BD135-16; BD137-16; BD139-16 100 - , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power , BD135; BD137; BD139 FEATURES PINNING · High current (max. 1.5 A) PIN · Low voltage (max , V BD139 - - 100 V BD135 - - 45 V BD137 - - 60 V BD139 VCEO - - - 80 V collector-emitter voltage open base ICM peak


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PDF M3D100 BD135; BD137; BD139 O-126; BD136, BD138 bd139 application note power transistor bd139 to 220 BD135 philips philips power transistor bd139 BD139 philips BD139 Philips Bd139 BD139 application TRANSISTOR NPN BD139 BD137
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