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2000 - QBD135

Abstract: bd139 bd135 to-126 BD13916S Cross-Reference DATE transistor cross reference TO-126 fairchild BD135 bd139 cross reference transistor A 1263
Text: Collector-Base Voltage : BD135 : BD137 : BD139 : BD135 : BD137 : BD139 Value 45 60 80 45 60 80 5 1.5 3.0 0.5 12.5 , Collector-Emitter Sustaining Voltage : BD135 : BD137 : BD139 Collector Cut-off Current Emitter Cut-off Current DC Current Gain : ALL DEVICE : ALL DEVICE : BD135 : BD137 , BD139 Test Condition IC = 30mA, IB = 0 Min. 45 60 , 100us DC 0.1 BD139 BD137 BD135 10 100 IC[A], COLLECTOR CURRENT VCE [V , products space space space BD137 Related Links Products groups NPN Epitaxial Silicon Transistor Analog and


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PDF BD135/137/139 BD136, BD138 BD140 O-126 BD135 BD137 BD139 QBD135 bd139 bd135 to-126 BD13916S Cross-Reference DATE transistor cross reference TO-126 fairchild BD135 bd139 cross reference transistor A 1263
8D139

Abstract: bdxxx BDL39 BD139 BD137 Transistor 80139 power transistor bd137 BD135 bd139 bd140 power transistor bd139
Text: BD135 BD137 BD139 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose n-p-n , circuits. The BD136, BD138 and BD140 are complementary to the BD135, BD137 and BD139 respectively. QUICK REFERENCE DATA BD135 BD137 BD 139 Collector-base voltage (open emitter) VCBO max. 45 60 100 V , 0034255 35ô ill BD135 BD137 BD139 yv. RATINGS Limiting values in accordance with the Absolute , . current gain ratio of matched pairs BD135/BD136; BD137 /BD138; BD139/BD140 |ICl=150 mA;|VcEl = 2V BD135


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PDF BD135 BD137 BD139 OT-32 BD136, BD138 BD140 BD135, BD137 BD139 8D139 bdxxx BDL39 Transistor 80139 power transistor bd137 BD135 bd139 bd140 power transistor bd139
2006 - BD139

Abstract: bd137 BD135-BD137-BD139 BD139 application bd135
Text: !"# BD135 BD137 BD139 )HDWXUHV · · · · 0D[LPXP5DWLQJV Rating Collector-Emitter Voltage , = 40 (Min) @IC = 150mAdc Complementary with BD136, BD138, BD140 Symbol BD135 BD137 BD139 VCEO Value , Silicon 45,60,80 Volts TO-126 A K Collector-Base Voltage BD135 BD137 BD139 Emitter-Base Voltage , Voltage* (IC=30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC , BD135 BD137 BD139 MCC TM Micro Commercial Components 10.0 IC, COLLECTOR CURRENT (AMP) 5.0 2.0


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PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 BD135-BD137-BD139 BD139 application
2002 - power transistor bd139

Abstract: BD139 transistor BD139 amplifier power transistor bd137 transistor bd137 TRANSISTOR BD139 TRANSISTOR NPN BD139 power transistor bd135 BD139 BD139 NPN transistor download datasheet
Text: DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137 , and BD139 types are NPN Silicon Epitaxial Planar Transistors designed , 45 45 TJ,Tstg JC JA BD137 60 60 5.0 1.5 3.0 0.5 12.5 1.25 -65 to +150 10 100 , 80 80 BD135-6 BD137 -6 BD139-6 MIN MAX 40 100 UNIT V V V A A A W W °C °C/W °C/W BD137 MIN MAX 100 10 10 60 0.5 1.0 25 40 160 25 BD139 MIN MAX 100 10 10 80 0.5 1.0


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PDF BD135 BD137 BD139 O-126 BD135, BD137, BD139 CHARACTERISTI10 power transistor bd139 BD139 transistor BD139 amplifier power transistor bd137 transistor bd137 TRANSISTOR BD139 TRANSISTOR NPN BD139 power transistor bd135 BD139 NPN transistor download datasheet
8D139

Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 transistor a110 TRANSISTOR BD 137-10 B0137 D106-V2 BD135
Text: BD135, BD137 , BD139 14 Permissible pulse load Jt. rthjc = f (t); v= parameter W BD136, BD137 . BD139 , range . Ic = f(Vce);Tea« = 60°C;v = 0 A B D 135, BD137 , BD139 Collector current Ic = f (VBE) VCE = 2 V; Tamb = parameter (common emitter configuration) mA BD135, BD137 , 8D139 # 5 , , BD139-10 Collector cutoff current versus temperature kaO ~ '(T'amh) nA BD135, BD137 , BD139 ras 150 , configuration) mA BD135, BD137 . BD139 10lr Base-emitter saturation voltage v0EMt=f(jy hn =10; ramb =


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PDF fl23SbQS 135/BD 137/BD BD135, B0137, B0139 BD137, BD139 BD136. 8D139 bd139 B0139 TRANSISTOR BD 137 transistor BD 378 transistor a110 TRANSISTOR BD 137-10 B0137 D106-V2 BD135
2003 - transistor BD139 N

Abstract: power transistor bd139 BD139 amplifier BD137-16 TRANSISTOR NPN BD139 BD139 BD139 N BD135-10 to126 case BD137-10
Text: DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137 , and BD139 types are NPN Silicon Epitaxial Planar Transistors designed , VEBO IC ICM IB IBM PD PD BD135 45 45 TJ,Tstg J-mb J-A BD137 60 60 5.0 1.5 2.0 , =5.0V, IC=50mA, f=100MHz 190 TYP SYMBOL hFE BD137 MIN MAX 100 10 100 60 0.5 1.0 40 63 250 25 190 TYP BD135-10 BD137 -10 BD139-10 MIN MAX 63 160 TEST CONDITIONS VCE=2.0V, IC


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PDF BD135 BD137 BD139 O-126 BD135, BD137, BD139 Tmb70 transistor BD139 N power transistor bd139 BD139 amplifier BD137-16 TRANSISTOR NPN BD139 BD139 N BD135-10 to126 case BD137-10
2002 - BD139

Abstract: BD139 N bd137 BD139-25 BD139 p BD135-BD137-BD139 bd135 N BD139 silicon transistors
Text: MCC )HDWXUHV omponents 21201 Itasca Street Chatsworth !"# $ % !"# BD135 BD137 BD139 , [LPXP5DWLQJV Rating Collector-Emitter Voltage BD135 BD137 BD139 Collector-Base Voltage BD135 BD137 BD139 , =30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC=125 ) Emitter , BD137 BD139 MCC 10.0 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 TJ = 125°C 5 ms dc 0.5 ms 0.1 ms 0.1 0.05 0.02 0.01 1 BD135 BD137 BD139 2 5 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 80


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PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 BD139 N BD139-25 BD139 p BD135-BD137-BD139 bd135 N BD139 silicon transistors
2006 - bd139

Abstract: bd139 application note
Text: MCC BD135 BD137 BD139   omponents 20736 Marilla Street Chatsworth , [LPXP5DWLQJV Rating Collector-Emitter Voltage Symbol BD135 BD137 BD139 Value VCEO  Unit 45 60 80  K A Vdc N Collector-Base Voltage BD135 BD137 BD139 , Collector-Emitter Sustaining Voltage* (IC=30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE , BD135 BD137 BD139 TM Micro Commercial Components IC, COLLECTOR CURRENT (AMP) 10.0 5.0 5


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PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 bd139 bd139 application note
2002 - BD139 N

Abstract: BD135,BD137,BD139 BD139 bd135 N BD137 BD135-BD137-BD139 BD135 power transistor bd135 power transistor bd137 power transistor bd139
Text: BD135 BD137 BD139 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax , Collector-Emitter Voltage Symbol BD135 BD137 BD139 Value Unit 45 60 80 VCEO TO-126 Vdc A K Collector-Base Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current Base , ) Collector-Emitter Sustaining Voltage* (IC=30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE , BD135 BD137 BD139 IC, COLLECTOR CURRENT (AMP) 10.0 5.0 5 ms 2.0 1.0 TJ = 125°C 0.5


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PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 N BD135,BD137,BD139 BD139 bd135 N BD137 BD135-BD137-BD139 BD135 power transistor bd135 power transistor bd137 power transistor bd139
2002 - bd139

Abstract: BD135-BD137-BD139 bd137 BD139 N BD139 p bd135 N BD139-25
Text: MCC )HDWXUHV omponents 21201 Itasca Street Chatsworth !"# $ % !"# BD135 BD137 BD139 , [LPXP5DWLQJV Rating Collector-Emitter Voltage BD135 BD137 BD139 Collector-Base Voltage BD135 BD137 BD139 , =30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC=125 ) Emitter , 300 µsec, Duty cycle 2% www.mccsemi.com BD135 BD137 BD139 MCC 10.0 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 TJ = 125°C 5 ms dc 0.5 ms 0.1 ms 0.1 0.05 0.02 0.01 1 BD135 BD137 BD139 2 5 10


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PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 BD135-BD137-BD139 BD139 N BD139 p bd135 N BD139-25
2009 - bd139

Abstract: bd137 bd135 power transistor bd139 transistor bd137 BD139 amplifier BD139 NPN transistor power transistor bd137 TRANSISTOR NPN BD139 bd137 Transistor
Text: BD135 BD137 BD139 NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137 , and BD139 are NPN Silicon Epitaxial Planar Transistors , Resistance SYMBOL BD135 BD137 BD139 VCBO 45 60 100 VCEO 45 60 80 VEBO 5.0 IC 1.5 ICM 2.0 IB 0.5 IBM 1.0 PD , =30mA ( BD137 ) 60 BVCEO IC=30mA (BD139) 80 VCE(SAT) IC=500mA, IB=50mA 0.5 VBE(ON) VCE=2.0V, IC=500mA 1.0 hFE VCE , =100MHz 190 SYMBOL TEST CONDITIONS hFE VCE=2.0V, IC=500mA BD135-10 BD137 -10 BD139-10 MIN MAX 63 160 BD135


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PDF BD135 BD137 BD139 BD135, BD137, O-126 Tmb70 power transistor bd139 transistor bd137 BD139 amplifier BD139 NPN transistor power transistor bd137 TRANSISTOR NPN BD139 bd137 Transistor
2014 - BD139

Abstract: No abstract text available
Text: BD135 BD137 BD139 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137 , and BD139 are silicon NPN epitaxial planar transistors , (SAT) VBE(ON) hFE hFE hFE fT SYMBOL hFE BD135 45 45 BD137 BD139 60 100 60 80 5.0 , =30mA ( BD137 ) 60 IC=30mA (BD139) 80 IC=500mA, IB=50mA VCE=2.0V, IC=500mA VCE=2.0V, IC=5.0mA 40 VCE , =2.0V, IC=500mA BD135-10 BD137 -10 BD139-10 MIN MAX 63 160 MAX 100 10 100 0.5 1.0 UNITS


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PDF BD135 BD137 BD139 BD135, BD137, BD139 O-126 BD137) BD139) 500mA,
2002 - bd139

Abstract: BD139 p BD135-BD137-BD139 bd135 N BD139 N BD139-25 BD136 bd137
Text: MCC )HDWXUHV omponents 20736 Marilla Street Chatsworth !"# $ % !"# BD135 BD137 BD139 , [LPXP5DWLQJV Rating Collector-Emitter Voltage BD135 BD137 BD139 Collector-Base Voltage BD135 BD137 BD139 , Voltage* (IC=30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC , www.mccsemi.com Revision: 3 2004/11/25 BD135 BD137 BD139 MCC 10.0 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 TJ = 125°C 5 ms dc 0.5 ms 0.1 ms 0.1 0.05 0.02 0.01 1 BD135 BD137 BD139 2 5 10 20 50 VCE


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PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 BD139 p BD135-BD137-BD139 bd135 N BD139 N BD139-25 BD136
2005 - Not Available

Abstract: No abstract text available
Text: / BD137 /BD139 TRANSISTOR(NPN) TO-126 FEATURES ·High Current(1.5A) 1. EMITTER ·Low , Value Parameter Units BD135 BD137 BD139 VCBO Collector-Base Voltage 45 60 , specified) MIN BD135 V(BR)CEO* Ic=30mA,IB=0 45 60 UNIT 80 BD137 Ic=100µA,IE=0 60 BD139 Collector-emitter breakdown voltage BD137 BD135 V(BR)CBO MAX 45 , 40-100 63-160 100-250 Typical Characteristics BD135/ BD137 /BD139 Jiangsu Changjiang


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PDF O-126 BD135/BD137/BD139 O-126 BD135 BD137 BD139 150mA
BD139

Abstract: BD137 philips power transistor bd139 BD139 philips BD135-BD137-BD139 BD135-10 BD139 PIN DATA BD137-10 BD139 circuits BD135-16
Text: (max. 1.5 A) · Low voltage (max. 80 V). BD135; BD137 ; BD139 PINNING PIN 1 2 emitter collector , -126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VcBO PARAMETER collector-base voltage BD135 BD137 BD139 collector-emitter voltage BD135 BD137 BD139 peak collector current total powei dissipation DC , Absolute Maximum Rating System (IEC 134). BD135; BD137 ; BD139 SYMBOL VcBO PARAMETER collector-base voltage BD135 BD137 BD139 collector-emitter voltage BD135 BD137 BD139 emitter-base voltage


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PDF BD135; BD137; BD139 O-126; BD136, BD138 BD140. BD135 BD137 BD139 philips power transistor bd139 BD139 philips BD135-BD137-BD139 BD135-10 BD139 PIN DATA BD137-10 BD139 circuits BD135-16
1997 - bd139 application note

Abstract: power transistor bd139 to 220 BD135 philips philips power transistor bd139 BD139 philips BD139 Philips Bd139 BD139 application TRANSISTOR NPN BD139 BD137
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137 ; BD139 NPN power , BD135; BD137 ; BD139 FEATURES PINNING · High current (max. 1.5 A) PIN · Low voltage (max , CONDITIONS MIN. TYP. MAX. UNIT open emitter BD135 - 45 V BD137 - - 60 V BD139 - - 100 V BD135 - - 45 V BD137 - - 60 V , Product specification NPN power transistors BD135; BD137 ; BD139 LIMITING VALUES In accordance


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PDF M3D100 BD135; BD137; BD139 O-126; BD136, BD138 bd139 application note power transistor bd139 to 220 BD135 philips philips power transistor bd139 BD139 philips BD139 Philips Bd139 BD139 application TRANSISTOR NPN BD139 BD137
2006 - bd139 pin out

Abstract: BD139 application BD139 N BD139 bd135 n power transistor bd139 bd140
Text: MCC BD135 BD137 BD139 omponents 20736 Marilla Street Chatsworth !"# $ % !"# , Rating Collector-Emitter Voltage Symbol BD135 BD137 BD139 Value 45 60 80 VCEO Unit K A Vdc N Collector-Base Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector , =30mA,IB=0) BD135 BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC , 2008/01/01 MCC BD135 BD137 BD139 TM Micro Commercial Components IC, COLLECTOR CURRENT


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PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 bd139 pin out BD139 application BD139 N BD139 bd135 n power transistor bd139 bd140
2002 - BD139 N

Abstract: BD139 bd137 BD135,BD137,BD139 bd135 N BD135 power transistor bd135 BD135-BD137-BD139 BD139 silicon transistors BD139 p
Text: MCC BD135 BD137 BD139 omponents 20736 Marilla Street Chatsworth !"# $ % !"# , Voltage Symbol BD135 BD137 BD139 Value Unit 45 60 80 VCEO TO-126 Vdc A K Collector-Base Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current Base Current Total Device , BD137 BD139 Collector Cutoff Current (VCB=30Vdc, IE=0) (VCB=30Vdc, IE=0, TC=125 ) Emitter Cutoff , www.mccsemi.com Revision: 2 2003/04/30 MCC BD135 BD137 BD139 IC, COLLECTOR CURRENT (AMP) 10.0


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PDF BD135 BD137 BD139 150mAdc BD136, BD138, BD140 BD139 N BD139 bd137 BD135,BD137,BD139 bd135 N BD135 power transistor bd135 BD135-BD137-BD139 BD139 silicon transistors BD139 p
transistor bd137

Abstract: BD139 BD139 NPN power transistor bd135 power transistor bd139 BD139 NPN transistor BD139 TRANSISTOR BD135 NPN transistor power transistor bd137 bd137
Text: BD135/ BD137 /BD139(NPN) TO-126 Transistor TO-126 7.400 7.800 1. EMITTER 3.000 2.500 , Temperature Dimensions in inches and (millimeters) Value BD137 60 60 5 1.5 1.25 150 -55-150 BD139 80 80 V V , V V V µA µA V V Collector-base breakdown voltage V(BR)CBO Ic=100µA,IE=0 BD137 BD139 BD135 Collector-emitter breakdown voltage V(BR)CEO* Ic=30mA,IB=0 BD137 BD139 Emitter-base , 16 100-250 BD135/ BD137 /BD139(NPN) TO-126 Transistor Typical Characteristics -


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PDF BD135/BD137/BD139 O-126 O-126 BD135 BD137 BD139 transistor bd137 BD139 NPN power transistor bd135 power transistor bd139 BD139 NPN transistor BD139 TRANSISTOR BD135 NPN transistor power transistor bd137
2002 - Not Available

Abstract: No abstract text available
Text: DATA SHEET BD135 BD137 BD139 NPN SILICON TRANSISTORS JEDEC TO-126 CASE DESCRIPTION: The Central Semiconductor BD135, BD137 , and BD139 types are NPN Silicon Epitaxial Planar Transistors designed , VEBO IC ICM IB IBM PD PD BD135 45 45 TJ,Tstg ΘJ-mb ΘJ-A BD137 60 60 5.0 1.5 , 80 80 BD135-6 BD137 -6 BD139-6 MIN MAX 40 100 UNIT V V V A A A A W W °C °C/W °C/W BD137 MIN MAX 100 10 100 60 0.5 1.0 25 40 160 25 190 TYP BD139 MIN MAX 100


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PDF BD135 BD137 BD139 O-126 BD135, BD137, BD139 BD135-10
BD139 PIN DIAGRAM

Abstract: BD135 PIN DIAGRAM to225aa BD137G BD139 BD139G TRANSISTOR bd 330 bd139 140 pin diagram of bd139 BD137
Text: BD135, BD137 , BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic , BD135 BD137 BD139 VCEO 45 60 80 Vdc BD135 BD137 BD139 VCBO 45 60 100 Vdc , BD137 THERMAL CHARACTERISTICS Characteristic YWW BD1xx Symbol Max Unit Thermal , . 1 BD135, BD137 , BD139 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted , ms 1.0 TJ = 125°C 0.5 dc 0.1 0.05 BD135 BD137 BD139 0.02 0.01 1 2 5 10


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PDF BD135, BD137, BD139 BD135 BD137 BD139 PIN DIAGRAM BD135 PIN DIAGRAM to225aa BD137G BD139 BD139G TRANSISTOR bd 330 bd139 140 pin diagram of bd139 BD137
2013 - BD139G

Abstract: BD139 PIN DIAGRAM
Text: BD135, BD137 , BD139 Plastic Medium-Power Silicon NPN Transistors This series of plastic , BD137 BD139 VCEO Collector−Base Voltage BD135 BD137 BD139 VCBO Emitter−Base Voltage , Number: BD135/D BD135, BD137 , BD139 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Collector−Emitter Sustaining Voltage* (IC = 0.03 Adc, IB = 0) BD135 BD137 , ://onsemi.com 2 BD135, BD137 , BD139 1.2 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10


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PDF BD135, BD137, BD139 BD135 BD137 BD135/D BD139G BD139 PIN DIAGRAM
Transistor 80139

Abstract: BD139 BD137 SGS BD139 NPN BD137 BD136 bd139 sot 32 BD140 BD135-BD137-BD139 BD138
Text: SGS -THOMSON BD135 BD137 /BD139 NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic , Value Unit BD135 BD137 BD139 VcBO Collector-Base Voltage (lE = 0) 45 60 80 V VcEO , ) VEB = 5 V 10 |xA VcEO(sus)* Collector-Emitter Sustaining Voltage lc = 30 mA for BD135 for BD137 for , / BD137 / B139 SOT-32 (TO-126) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 7.4


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PDF BD135 BD137/BD139 BD135, BD137 BD139 OT-32 BD136 BD138 BD140. BD135 Transistor 80139 BD137 SGS BD139 NPN bd139 sot 32 BD140 BD135-BD137-BD139
2003 - BD135

Abstract: BD139 ic 139 BD-135 BD137 TO126
Text: BD135/137/139 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead(Pb)-Free 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol BD135 BD137 , 6 10 16 40-100 63-160 100-250 Device Marking BD135 = BD135 , BD137 = BD137 , Breakdown Voltage IC = 100µA, IE = 0 BD135 BD137 BD139 Collector-Base Breakdown Voltage IC = 30mA, IB , =0 BD135 BD137 BD139 Min Max Unit V(BR)CBO 45 60 80 - V V(BR)CEO 45 60 80


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PDF BD135/137/139 O-126 BD135 BD137 BD139 BD135 BD139 ic 139 BD-135 BD137 TO126
1997 - BD139

Abstract: CIRCUIT DIAGRAM OF BD139 bd139 sot 32 BD139 NPN BD139I BD137 BD138 BD136 bd135 diagram transistor BD140
Text: BD135 BD137 /BD139 NPN SILICON TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic , SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BD135 BD137 Uni t BD139 , W -65 to 150 o C 150 o C 1/4 BD135 / BD137 / BD139 THERMAL DATA R t hj-ca , . Collector-Emitter Saturation Voltage I C = 30 mA for BD135 for BD137 for BD139 I C = 0.5 A Un it µA µA


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PDF BD135 BD137/BD139 BD135, BD137 BD139 OT-32 BD136 BD138 BD140. CIRCUIT DIAGRAM OF BD139 bd139 sot 32 BD139 NPN BD139I BD136 bd135 diagram transistor BD140
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