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LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

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6 pin pulse transformer 4503 circuit diagram

Abstract: l0534 HCPL 601 BD transistor motor IG 2200 19 x 00 15 r smd Optocoupler 601 8 pin smd L4562 ADC60-08 l0631 smd Optocoupler 601
Text: Red b o ld text-R ECO M M END ED FOR NE W DESIGNS Improved Paths Upgrade Charts 1M Bd TRANSISTOR , 00 0 00 0 0 0 Consumer 0 00 0 O 0 0 0 X Packages 1 MBd Transistor , Transistor Output Optocoupler f Packages H R R H W idebody' Package SMD Package Ìjbb J 400 mil , -263N \ 5M Bd LOGIC GATE OPTOCOUPLER (HCPL-2200 TYPE) > \H C P L -0 6 3 N / l/=2mA CMR=10kV/us SINGLE


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PDF PTION060 6 pin pulse transformer 4503 circuit diagram l0534 HCPL 601 BD transistor motor IG 2200 19 x 00 15 r smd Optocoupler 601 8 pin smd L4562 ADC60-08 l0631 smd Optocoupler 601
transistor bd 126

Abstract: TRANSISTOR BD 139 BD139 transistor BD 135 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor transistor bd 711 TRANSISTOR BC 136
Text: TELEFUNKEN ELECTRONIC Creativeledinotoe*^ IN electronic BD 135 · BD 137 · BD 139 1?E D , * · BD 135, BD 136, BD 139 are comple mentary to BD 136, BD 138, BD 140 Collector connected with , .2/502.0888 E BD 135 Vcbo ^CEO ^EBO *c icM 45 45 BD 137 60 60 5 1 1,5 100 BD 139 80 80 V V V mA A mA , /W 2532 F- 07 11 | i i 1 & TELEFUNKEN · BD 135 BD 137 BD 139 , °C 0 t i vcb= . = Collector-base breakdown voltage /c = 1 mA BD 135 BD 137 BD 139


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PDF DIN41869 DIN125A 15A3DIN transistor bd 126 TRANSISTOR BD 139 BD139 transistor BD 135 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor transistor bd 711 TRANSISTOR BC 136
TRANSISTOR BC 136

Abstract: transistor BD 140 transistor bd 126 BD 140 transistor transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 16BD136 BD 139 transistor transistor bd 711
Text: fl^HDD'ib DQ' O TBR^ IALCÛ BD 136 BD 138 Ibd 140 T-33-17 Silicon PNP Epitaxial Planar Power , Dimensions In mm BD 136, BD 138, BD 140 are comple mentary to BD 135, BD 137, BD 139 Collector , Base current Total power dissipation W Tm S 70 «C BD 136 "^CBO *^CEO "^EBO -'c BD 138 60 60 5 1 1.5 100 1 8 150 55 , .+ 150 70 BD 1£0 80 80 V V V mA A mA W W °C °C N cm * i ' 45 45 ^ C M , TELEFUNKEN ELECTRONIC 17E D fl'ISDD'lb QOOTMDO b AL6G BD 1 3 6 - BD 1 3 8 - BD 140 .


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PDF T-33-17 DIN125A 15A3DIN TRANSISTOR BC 136 transistor BD 140 transistor bd 126 BD 140 transistor transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 16BD136 BD 139 transistor transistor bd 711
transistor bd170

Abstract: BD170 BD168 itt ol 170
Text: BD168 BD170 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45, 60, 80 VOLTS 20 WATTS PLASTIC M EDIUM POWER SILICON PNP TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. · DC Current Gain- h p g - 4 0 (M in ) @ lc = 0 .1 6 Adc « BD 166, 168, 170 are complementary with BD 165, 167, 169 M A X IM U M R A T IN G S R a tin g S ym bol Typ« BD 166 B D 168 BD 170 BD 166 BD 166 BD 170 V a lu « 45 60 80 45 60 80 b 1.5 0.5 1.25 10 Pd 20 160


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PDF BD166 BD168 BD170 transistor bd170 BD170 itt ol 170
10 watt power transistor bd

Abstract: BD 166, 168, 170
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon NPN Transistor . . . , DC Current Gain - hFE = 40 (Min) @ lc = 0.15 Adc · BD 165,169 are complementary with BD 166, 168,170 , 45, 60,80 VOLTS 20 WATTS Symbol VCEO Type BD 165 BD 169 BD 165 BD 169 Value 45 80 45 80 5 , § 2.0%. lEBO hFE* 40 15 VcE(sat)" VßE(on)' - - 6.0 0.5 Vdc Symbol BVCEO Type BD 165 BD 169 Min 45 80 Max - Unit Vdc ICBO BD 165 BD 169 0.1 0,1 1,0 mAdc - mAdc 0.95


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PDF BD165 BD169 10 watt power transistor bd BD 166, 168, 170
K 3264 transistor

Abstract: BD 266 S K 3264 transistor technical data transistor Bd 575 TRANSISTOR BD 168 10 watt power transistor bd BD 266 A transistor BD 139 K1461 BD 140 transistor
Text: PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR . . . designed for use as audio amplifiers and drivers , Adc • BD 165,167, 169 are complementary with BD 166, 168, 170 MAXIMUM RATINGS Rating Symbol Typ« Valus Unit Collector-Emitter Voltage VCEO BD 165 BD 167 BD 169 45 60 80 Vdc Collector-Base Voltage VCBO BD 165 BD 167 BD 169 45 60 80 Vdc Emitter-Base Voltage VEBO 5 Vdc Collector Current 'c 1.5 Adc Base , Collector-Emitter Sustaining Voltage' (lc = 0.1 Adc, lg = 0) bvceo' BD 165 BD 167 BD 169 45 60 80 - Vdc Collector


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PDF b3b7254 AN-4151 K 3264 transistor BD 266 S K 3264 transistor technical data transistor Bd 575 TRANSISTOR BD 168 10 watt power transistor bd BD 266 A transistor BD 139 K1461 BD 140 transistor
1995 - BD165

Abstract: TRANSISTOR BD 168 TRANSISTOR bd165 BD NPN transistors transistor BD 140 BD 140 transistor BD169 power transistor audio amplifier 500 watts 10 watt power transistor bd Motorola Bipolar Power Transistor Data
Text: © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 , Symbol Type Min Max Unit BVCEO BD 165 BD 169 45 80 - - Vdc BD 165 BD , Symbol Type Value Collector­Emitter Voltage VCEO BD 165 BD 169 45 80 Collector­Base Voltage VCBO BD 165 BD 169 45 80 Vdc Emitter­Base Voltage VEBO 5 Vdc , Gain - hFE = 40 (Min) @ IC = 0.15 Adc · BD 165, 169 are complementary with BD 166, 168, 170 . . .


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PDF BD165/D* BD165/D BD165 TRANSISTOR BD 168 TRANSISTOR bd165 BD NPN transistors transistor BD 140 BD 140 transistor BD169 power transistor audio amplifier 500 watts 10 watt power transistor bd Motorola Bipolar Power Transistor Data
TRANSISTOR BD 168

Abstract: 10 watt power transistor bd transistor bd170 transistor bd 126 Transistor 168 BD 166, 168, 170 transistor bd 170 BD 140 transistor transistor C016 transistor BD 140
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . designed for , Current Gain—hpE=-40 (Min) @ 'c=0.16 Adc • BD 166, 168, 170 are complementary with BD 165, 167, 169 MAXIMUM RATINGS Rating Symbol Typ« Valu* Unit Collector-Emitter Voltage V CEO BD 166 BD 168 BD 170 45 60 80 Vdc Collector-Base Voltage VCBO BD 166 BD 168 BD 170 45 60 80 Vdc Emitter-Base Voltage VEBO , Adc, lB = 0) bvceo BD 166 BD 168 BD 170 45 60 80 — Vdc Collector Cutoff Current (V =45 Vdc. 1 =0


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PDF AN-4151 TRANSISTOR BD 168 10 watt power transistor bd transistor bd170 transistor bd 126 Transistor 168 BD 166, 168, 170 transistor bd 170 BD 140 transistor transistor C016 transistor BD 140
2002 - Low Power PWM controller 6-pin

Abstract: 6pin pwm PWM controller 6-pin 1/kt 8356
Text: -8355/57) and a PWM/PFM switching controller (S-8356/58). A bipolar (NPN) transistor or an enhancement (N-ch) MOSFET transistor can be used as external transistor . The S-8355/57 series realizes low ripple , , and transistor · Output voltage: Can be set in 0.1 V steps between 1.5 and 6.5 V (for VDD/VOUT , 3 SELECTION GUIDE Product name S-8355KxxMC S-8355LxxMC/ BD S-8355MxxMC/ BD S-8357BxxMC S-8357BxxMA S-8357BxxUA S-8357ExxMC S-8357FxxMC/ BD S-8357GxxMC/ BD S-8357HxxMC/ BD S-8357JxxMC/ BD S-8356KxxMC S


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PDF S-8355/56/57/58 S-8355/57) S-8356/58) S-8355/57 S-8327/28 Low Power PWM controller 6-pin 6pin pwm PWM controller 6-pin 1/kt 8356
10 watt power transistor bd

Abstract: transistor BD 140 bd140 transistor BD 136 transistor bd 138 BD 140 transistor transistor BD 139 transistor BD 135 motorola Bd140 transistor BD 137
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P lastic Medium Power Silicon PNP Transistor . . . , . · · DC Current Gain - hpg = 40 (Min) @ l c = 0.15 Adc BD 136, 138, 140 are com plementary with BD , 10 WATTS MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol v CEO Type BD 136 BD 138 BD 140 BD 136 BD 138 BD 140 Value 45 60 80 45 60 100 5 1.5 0.5 1.25 10 12.5 100 - 5 5 to +150 , °c/w REV 7 3-160 Motorola B ipolar Power Transistor Device Data BDI 36 BD138 BD140 BD140


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PDF BD136 BD138 BD140 BD140-10 10 watt power transistor bd transistor BD 140 transistor BD 136 transistor bd 138 BD 140 transistor transistor BD 139 transistor BD 135 motorola Bd140 transistor BD 137
D73 transistor

Abstract: transistor BD 325 BD206 d731 BD208 BD transistor BD206 motorola
Text: SEMICONDUCTOR TECHNICAL DATA PLASTIC HIGH POWER SILICON PNP TRANSISTOR . . . designed for use in high power , ) @ Iq=2.0 Ade • BD 206, 208 are complementary with BD 205, 207 MAXIMUM RATINGS 96D 80569 D7-3.?-*/1 Rating Symbol Type Value Unit Col lector-Emitter Voltage V CEO BD 206 BD 208 45 60 Vdc Collector-Base Voltage VCBO BD 206 BD 208 55 70 Vdc Emitter-Base Voltage VEBO 5 Vdc Collector Current ■c , Collector-Emitter Sustaining Voltage* (lc = 0.2 Adc, l0=O) bvceo' bd 206 bd 208 45 60 - Vdc Collector Cutoff


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PDF b3ti725 BD206, BD208 D73 transistor transistor BD 325 BD206 d731 BD208 BD transistor BD206 motorola
transistor BD 246

Abstract: transistor BD 135 BD135 switch transistor bd 242 transistor BD 249 bd135 texas instruments transistor BD BD139-6 transistor BD 246 b BD139
Text: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR _1171 DESIGNED FOR COMPLEMENTARY USE WITH , TRANSISTOR electrical characteristics at 25 °C free-air temperature (unless otherwise noted) PARAMETER , A BD 136 BD 135 6,5 45 1 40 250 0,15 BD 138 BD 137 6,5 60 1 40 160 0,15 BD 140 BD 139 6,5 80 1 40 160 0,15 BD 240 BD 239 30 -45 -2 40 0,2 BD 240 A BD 239 A 30 -60 -2 40 0,2 BD 240 B BD 239 B 30 -80 -2 40 0,2 BD 240 C BD 239 C 30 -100 -2 40 0,2 BD 242 BD 241 40 -45 -3 25 1 BD 242 A BD 241 A


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PDF BD135 BD136 STD-750. OT-32 40PEP 80PEP OT-32 O-66P transistor BD 246 transistor BD 135 BD135 switch transistor bd 242 transistor BD 249 bd135 texas instruments transistor BD BD139-6 transistor BD 246 b BD139
transistor bd 139

Abstract: transistor BD 140 transistor bd 242 transistor bd 138 BD139 transistor BD 246 transistor BD 240 BD138 transistor BD 135 transistor BD245
Text: BD138 PNP EPITAXIAL PLANAR SILICON TRANSISTOR _1171 DESIGNED FOR COMPLEMENTARY USE WITH , SILICON TRANSISTOR electrical characteristics at 25 °C free-air temperature (unless otherwise noted , V A A BD 136 BD 135 6,5 45 1 40 250 0,15 BD 138 BD 137 6,5 60 1 40 160 0,15 BD 140 BD 139 6,5 80 1 40 160 0,15 BD 240 BD 239 30 -45 -2 40 0,2 BD 240 A BD 239 A 30 -60 -2 40 0,2 BD 240 B BD 239 B 30 -80 -2 40 0,2 BD 240 C BD 239 C 30 -100 -2 40 0,2 BD 242 BD 241 40 -45 -3 25 1 BD 242 A


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PDF BD138 BD137 MIL-STD-750. OT-32 OT-32 40PEP 80PEP transistor bd 139 transistor BD 140 transistor bd 242 transistor bd 138 BD139 transistor BD 246 transistor BD 240 BD138 transistor BD 135 transistor BD245
2003 - Low Power PWM controller 6-pin

Abstract: pin diagram of 8355 8355 pin and block diagram PWM controller 6-pin 6pin pwm s8358 S-8355M55MC-MDO-T2 sot-23-5 fet S-8358H30MC-NUP-T2 S-8357N50MC-O3J-T2
Text: -8355/57) and a PWM/PFM switching controller (S-8356/58). A bipolar (NPN) transistor or an enhancement (N-ch) MOS FET transistor can be used as external transistor . The S-8355/57 series realizes low ripple , kHz, 300 kHz, and 600 kHz models) · External parts: Coil, diode, capacitor, and transistor · Output , 3 EXT 1 2 3 1 2 3 FUNCTION LIST Product name S-8355KxxMC S-8355LxxMC/ BD S-8355MxxMC/ BD S-8355QxxMC/ BD S-8357BxxMC S-8357BxxMA S-8357BxxUA S-8357ExxMC S-8357FxxMC/ BD S-8357GxxMC/ BD S


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PDF S-8355/56/57/58 S-8355/57) S-8356/58) S-8355/57 S-8355KxxMC/BD, S-8355LxxMC/BD, S-8355MxxMC/BD, S-8355QxxMC/BD S-8356KxxMC/BD, S-8356LxxMC/BD, Low Power PWM controller 6-pin pin diagram of 8355 8355 pin and block diagram PWM controller 6-pin 6pin pwm s8358 S-8355M55MC-MDO-T2 sot-23-5 fet S-8358H30MC-NUP-T2 S-8357N50MC-O3J-T2
1995 - BD139 MOTOROLA

Abstract: BD139 h parameters BD139 transistor BD135 BD 139 transistor BD135 transistor BD137 parameters U/25/20/TN26/15/850/power transistor bd135 bd139 pin out BD135-D
Text: © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 REV 7 , Value Unit Collector­Emitter Voltage VCEO BD 135 BD 137 BD 139 45 60 80 Vdc Collector­Base Voltage VCBO BD 135 BD 137 BD 139 45 60 100 Vdc Emitter­Base Voltage Rating MAXIMUM RATINGS CASE 77­08 TO­225AA TYPE · DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc · BD 135, 137, 139 are complementary with BD 136, 138, 140 . . . designed for use as audio amplifiers and


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PDF BD135/D* BD135/D BD139 MOTOROLA BD139 h parameters BD139 transistor BD135 BD 139 transistor BD135 transistor BD137 parameters U/25/20/TN26/15/850/power transistor bd135 bd139 pin out BD135-D
transistor BD 246

Abstract: transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 BD136 transistor BD 241 240BD
Text: BD136 PNP EPITAXIAL PLANAR SILICON TRANSISTOR _1171 DESIGNED FOR COMPLEMENTARY USE WITH , Instruments 2-13 BD136 PNP EPITAXIAL PLANAR SILICON TRANSISTOR electrical characteristics at 25 °C , 25 oc VCEO ICD hFE (al |C type (100 °C| min max min max PNP NPN W V A A BD 136 BD 135 6,5 45 1 40 250 0,15 BD 138 BD 137 6,5 60 1 40 160 0,15 BD 140 BD 139 6,5 80 1 40 160 0,15 BD 240 BD 239 30 -45 -2 40 0,2 BD 240 A BD 239 A 30 -60 -2 40 0,2 BD 240 B BD 239 B 30 -80 -2 40 0,2 BD 240 C


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PDF BD136 BD135 MIL-STD-750. OT-32 40PEP 80PEP OT-32 O-66P transistor BD 246 transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 BD136 transistor BD 241 240BD
1995 - BD140 application circuits circuits

Abstract: transistor bd136 transistor BD 140 bd140 pin out BD140-10 BD140 transistor BD140 BD136 BD138 transistor 136 138 140
Text: © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 REV 7 , Junction Temperarture Range Symbol Type Value Unit Collector­Emitter Voltage VCEO BD 136 BD 138 BD 140 45 60 80 Vdc Collector­Base Voltage VCBO BD 136 BD 138 BD 140 , Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc · BD 136, 138, 140 are complementary with BD 135, 137, 139 , complementary circuits. Plastic Medium Power Silicon PNP Transistor BD136 BD138 BD140 BD140


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PDF BD136/D* BD136/D BD140 application circuits circuits transistor bd136 transistor BD 140 bd140 pin out BD140-10 BD140 transistor BD140 BD136 BD138 transistor 136 138 140
TIP 2n3055

Abstract: transistor tip 5530 tip 147 TRANSISTOR equivalent TIP 41 transistor TIP 122 transistor transistor tip 3055 TIP 122 transistor APPLICATION NOTES transistor TIP 42 tip 127 TRANSISTOR equivalent TRANSISTOR tip 127
Text: TYPE TIP30S5 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR FOR POWER AMPLIFIER AND , rate of 28 mW/°C. 4. This retino is based on the capability of the transistor to operate safely in , |_/2. Texas Instruments 2-281 TYPE TIP3055 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR , current values shown are nominal; exact values vary slightly with transistor parameters. 2-280 Texas Instruments TYPE TIP30S5 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR PARAMETER MEASUREMENT


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PDF TIP30S5 2N3055 TIP 2n3055 transistor tip 5530 tip 147 TRANSISTOR equivalent TIP 41 transistor TIP 122 transistor transistor tip 3055 TIP 122 transistor APPLICATION NOTES transistor TIP 42 tip 127 TRANSISTOR equivalent TRANSISTOR tip 127
Bd 130 NPN transistor

Abstract: 62702-D394 transistor z5
Text: 2SC D - 623SbQS QQQM3Mb M « S I E G BD 329 CK346 0 - 7 r ? i~. ° 7 25C NPN Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package (12 A 3 DIN 41 869, sheet 4). Together with its complementary transistor BD , radios). Type BD 329 BD 329/ BD 330 paired Spring washer A 3 DIN 137 Ordering code Q 62702 , Approx. weight 0.5 g Transistor fixfng with M 3 screw D im ensions in m m Starting torque max. 0.8


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PDF 623SbQS CK346 329/BD 62702-D394 Q62702-D401 Q62902-B63 0QQ434fl -T-33 Bd 130 NPN transistor transistor z5
BDX 241

Abstract: transistor BD 246 transistor BD 240 TRANSISTOR 246 TRANSISTOR Bd 137 BD139-6 transistor bd 242 transistor BD 249 BD138 2n 3055 transistor
Text: BD137 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR _TT71 DESIGNED FOR COMPLEMENTARY USE WITH , . Texas Instruments 2-15 BD137 NPN EPITAXIAL PLANAR SILICON TRANSISTOR electrical characteristics at , max min max PNP NPN W V A A BD 136 BD 135 6,5 45 1 40 250 0,15 BD 138 BD 137 6,5 60 1 40 160 0,15 BD 140 BD 139 6,5 80 1 40 160 0,15 BD 240 BD 239 30 -45 -2 40 0,2 BD 240 A BD 239 A 30 -60 -2 40 0,2 BD 240 B BD 239 B 30 -80 -2 40 0,2 BD 240 C BD 239 C 30 -100 -2 40 0,2 BD 242 BD 241 40


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PDF BD137 BD138 MIL-STD-750. OT-32 OT-32 40PEP 80PEP BDX 241 transistor BD 246 transistor BD 240 TRANSISTOR 246 TRANSISTOR Bd 137 BD139-6 transistor bd 242 transistor BD 249 BD138 2n 3055 transistor
BD 130 NPN transistor

Abstract: transistor BD transistor BD 329 Q62702-D401 JH transistor BD329 QQQ4347 BD330 Q62902-B63 Q62702-D394
Text: 2SC D ■aaBSbQS 00043Mb M «SXEfi NPN Silicon Planar Transistor BD 329 -_ 25C CK3^6 0_°7 SIEMENS AKTIEN6ESELLSCHAF BD 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package (12 A 3 DIN 41 869, sheet 4). Together with its complementary transistor BD 330 it is particularly , code BD 329 Q62702-D394 BD 329/ BD 330 paired Q62702-D401 Spring washer A 3 DIN 137 Q62902-B63 , *, weight O.S g Dimensions in mm Transistor fixing with M3 screw Starting torque max. 0.8 Nm Washer or


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PDF 00043Mb Q62702-D394 329/BD Q62702-D401 Q62902-B63 100ps 200jiS BD329 BD 130 NPN transistor transistor BD transistor BD 329 Q62702-D401 JH transistor BD329 QQQ4347 BD330 Q62902-B63 Q62702-D394
TRANSISTOR bd 147

Abstract: bdw 36 w41b BDW 38 npn darlington transistor 200 watts
Text: Motorola Bipolar Power Transistor Device Data BDW 42 BDW 46 BDW47 ELECTRICAL CHARACTERISTICS (T q » 2 , staining V o ltage (1) O c - 30 m Adc, Iq - 0) v CEO(SUS) BD W 46 BD W 42/B D W 47 'C E O BD W 46 B D W 42/B D W 47 'C B O BD W 41/B D W 46 BD W 42/ BD W 47 'e b o 80 100 Vdc Symbol Min Max Unit , orw ard B iased BD W 42 B D W 46/B D W 47 s/b V C E - 28.4 Vdc V c e - 40 Vdc V c e - 22.5 Vdc V c , Cob pF 200 300 BD W 42 B D W 46/B D W 47 S m a ll-S ig n a l C u rre n t G ain ( lc - 3.0 A d


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PDF BDW46 BDW42/BDW47 O-220AB BDW47 BDW45, TRANSISTOR bd 147 bdw 36 w41b BDW 38 npn darlington transistor 200 watts
Q62702-D401

Abstract: TRANSISTOR bd 330 b0330 4l transistor transistor BD 329 330 transistor spring washer Q62902-B63 Q62702-D395 V 04350
Text: 2SC J> m fl23SbDS QQQH3H1 T HSIEG PNP Silicon Planar Transistor BD 330 _25C 04-349 D SIEMENS AKTIENGESELLSCHAF BO 330 is an epitaxial PNP silicon planar transistor in TO 126 plastic package (12 A 3 DIN 41 869, sheet 4). Together with its complementary transistor BD 329 it is particularly suitable for use in complementary output stages of medium performance (e.g. car radios). Type Ordering code BD 330 Q62702-D395 BD 330/ BD 329 paired Q62702-D401 Spring washer A 3 DIN 137 Q62902-B63 Iffiniii ♦i h- Appro


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PDF fl23SbDS Q62702-D395 330/BD Q62702-D401 Q62902-B63 200ps[ 23SbOS Q0043S1 Q62702-D401 TRANSISTOR bd 330 b0330 4l transistor transistor BD 329 330 transistor spring washer Q62902-B63 Q62702-D395 V 04350
2002 - pin diagram of 8355

Abstract: Low Power PWM controller 6-pin ic 8355 block diagram S-8355M50MC-MDJ-T2 ic 8355 6pin pwm S-8358J50MC-NXJ-T2 8355 pin and block diagram
Text: switching controller (S-8356/58). A bipolar (NPN) transistor or an enhancement (N-ch) MOSFET transistor can be used as external transistor . The S-8355/57 series realizes low ripple, high efficiency, and , to 78% (250 kHz and 300 kHz models) · External parts: Coil, diode, capacitor, and transistor · Output , name S-8355KxxMC S-8355LxxMC/ BD S-8355MxxMC/ BD S-8357BxxMC S-8357BxxMA S-8357BxxUA S-8357ExxMC S-8357FxxMC/ BD S-8357GxxMC/ BD S-8357HxxMC/ BD S-8357JxxMC/ BD S-8356KxxMC S-8356LxxMC/ BD S-8356MxxMC/ BD S


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PDF S-8355/56/57/58 S-8355/57) S-8356/58) S-8355/57 S-8355KxxMC/BD, S-8355LxxMC/BD, S-8355MxxMC/BD S-8356KxxMC/BD, S-8356LxxMC/BD, S-8356MxxMC/BD pin diagram of 8355 Low Power PWM controller 6-pin ic 8355 block diagram S-8355M50MC-MDJ-T2 ic 8355 6pin pwm S-8358J50MC-NXJ-T2 8355 pin and block diagram
2008 - Not Available

Abstract: No abstract text available
Text: Conditions VCC=V1, PW=PW1, DF=DF1, TF=25±5°C, POUT= 25W, F=F3, Per transistor . Screen ' BD ' = parameter , Part Number: Integra IBP3134M25 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon , ˆ’ Ni Plated Cu Carrier Be0 Based Transistor Package − Unmatched Thermal Reliability Pulse Format , Screen Parameter BD BD BD BD Note Collector-Emitter Voltage Emitter-Base Voltage Storage , 1.45 °C/W Test Conditions VBE=0V. - Screen ' BD ' = parameter qualified By Design


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PDF IBP3134M25 IBP3134M25 IBP3134M25-REV-NC-DS-REV-NC
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