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BCW66HTA Diodes Incorporated Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, SOT-23, 3 PIN
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BCW66H Zetex / Diodes Inc Bristol Electronics 6,000 - -
BCW66H SPC Multicomp Farnell element14 - £0.13 £0.04
BCW66H SPC Multicomp element14 Asia-Pacific - $0.08 $0.03
BCW66HE6327 Infineon Technologies AG ComS.I.T. 2,905 - -
BCW66HR Nexperia Avnet - $0.01 $0.01
BCW66HRTA Zetex / Diodes Inc ComS.I.T. 790 - -
BCW66HTA Diodes Incorporated Future Electronics - $0.08 $0.08
BCW66HTA Diodes Incorporated Farnell element14 1,250 £0.22 £0.07
BCW66HTA Zetex / Diodes Inc Bristol Electronics 1,500 - -
BCW66HTA Zetex / Diodes Inc Bristol Electronics 39,000 $0.45 $0.06
BCW66HTA Diodes Incorporated Avnet - $0.44 $0.11
BCW66HTA Diodes Incorporated Bristol Electronics 1 - -
BCW66HTA Zetex / Diodes Inc Bristol Electronics 18,000 $0.45 $0.06
BCW66HTA Diodes Incorporated TME Electronic Components 15 $0.15 $0.07
BCW66HTA Diodes Incorporated Avnet - $0.11 $0.09
BCW66HTA Diodes Incorporated Newark element14 50 $0.05 $0.05
BCW66HTA Diodes Incorporated Allied Electronics & Automation - $0.13 $0.09
BCW66HTA Diodes Incorporated element14 Asia-Pacific - $0.53 $0.08
BCW66HTA Diodes Incorporated element14 Asia-Pacific - $0.53 $0.08
BCW66HTA Diodes Incorporated Bristol Electronics 50 - -
BCW66HVL Nexperia Avnet - $0.01 $0.01

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BCW66H datasheet (30)

Part Manufacturer Description Type PDF
BCW66H Diodes 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Original PDF
BCW66H Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
BCW66H Infineon Technologies NPN Silicon AF Transistor Original PDF
BCW66H Infineon Technologies SOT23 package Original PDF
BCW66H Micro Commercial Components NPN Small Signal Transistor 330mW Original PDF
BCW66H Siemens NPN Silicon AF Transistors (For general AF applications High current gain) Original PDF
BCW66H STMicroelectronics SMALL SIGNAL NPN TRANSISTORS Original PDF
BCW66H Zetex Semiconductors SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Original PDF
BCW66H Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan PDF
BCW66H Continental Device India General Purpose Transistor Scan PDF
BCW66H Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan PDF
BCW66H Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
BCW66H Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan PDF
BCW66H International Rectifier HEXFET Power MOSFET Scan PDF
BCW66H Motorola Small-signal NPN transistor. Scan PDF
BCW66H Others Transistor Shortform Datasheet & Cross References Scan PDF
BCW66H Others Shortform Transistor PDF Datasheet Scan PDF
BCW66H Others Shortform Transistor PDF Datasheet Scan PDF
BCW66H Others Diode, Transistor, Thyristor Datasheets and more Scan PDF
BCW66H Others Shortform Transistor Datasheet Guide Scan PDF

BCW66H Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2013 - Not Available

Abstract: No abstract text available
Text: Symbol Top View Pin-Out Ordering Information (Notes 4 & 5) Part Number BCW66HTA BCW66HQTA , A Product Line of Diodes Incorporated BCW66H 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 , our website at http://www.diodes.com/products/packages.html. Marking Information EH BCW66H , 2013 © Diodes Incorporated A Product Line of Diodes Incorporated BCW66H Maximum Ratings , 100 1k Pulse Width (s) Pulse Power Dissipation BCW66H Document number: DS33003 Rev. 5 - 2


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PDF BCW66H 800mA 300mV 100mA BCW68H J-STD-020 AEC-Q101 DS33003
2006 - bcw66h

Abstract: No abstract text available
Text: BCW66F . BCW66H BCW66F . BCW66H NPN Surface Mount General Purpose Si-Epi-Planar Transistors , VEB0 Ptot IC ICM IBM Tj TS Grenzwerte (TA = 25°C) BCW66F . BCW66H 45 V 75 V 5V 250 mW 1) 800 mA , ­ ­ ­ ­ ­ 250 400 630 ­ ­ ­ BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE 35 50 80 75 100 180 100 160 250 ­ ­ ­ , , Schaltverhältnis 2% http://www.diotec.com/ © Diotec Semiconductor AG 1 BCW66F . BCW66H Characteristics


Original
PDF BCW66F BCW66H BCW66H OT-23 O-236) UL94V-0 BCW68F BCW68H
BCW66F

Abstract: BCW66G BCW66H BCW68F BCW68H
Text: BCW66F . BCW66H BCW66F . BCW66H Surface Mount General Purpose Si-Epi-Planar Transistors , Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW66F . BCW66H Collector-Emitter-volt. ­ , 100 µA 35 50 80 ­ ­ ­ ­ ­ ­ BCW66F BCW66G BCW66H hFE hFE hFE 75 100 180 ­ ­ ­ ­ ­ ­ VCE = 1 V, IC = 100 mA BCW66F BCW66G BCW66H hFE hFE hFE 100 160 , = 10 mA 1 BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H hFE hFE hFE ­ ­ ­ 35


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PDF BCW66F BCW66H OT-23 O-236) UL94V-0 BCW68F BCW66F BCW66G BCW66H BCW68F BCW68H
2007 - Not Available

Abstract: No abstract text available
Text: Marking: BCW66F:EF; BCW66G:EG; ℃ BCW66H :EH ELECTRICAL CHARACTERISTICS (Ta=25℃ unless , voltage VCE=10V, IC=0. 1mA BCW66F BCW66G BCW66H VCE=1V, IC= 10mA BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H hFE1 hFE2 DC current gain * VCE=1V, IC


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PDF OT-23 OT-23 BCW66F/66G/66H BCW68 BCW66F BCW66G BCW66H BCW66G BCW66H BCW66F
30255

Abstract: qSOT-23
Text: -freq u en cy d river s ta g e an d switching applications. t =i B Device BCW66F BCW66G BCW66H cr , Vdc, lc = 0, TA = 150°C VE B = 4.0 Vdc, lc = 0 lc = 100 ixAdc, VC E = 1.0 Vdc BCW66F BCW66G BCW66H : BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H Min 45 5.0 75 - - - 35 50 80 75 110


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PDF b3b72SS BCW66F BCW66G BCW66H b3b725S 30255 qSOT-23
2004 - BCW66F/66G/66H

Abstract: No abstract text available
Text: VCE=1V, IC= 10mA BCW66F BCW66G BCW66H VCE=1V, IC= 100mA BCW66F BCW66G BCW66H VCE=2V, IC= 500mA BCW66F BCW66G BCW66H µA 0.02 µA 35 50 80 75 110 180 100 160 250 35 60 , VCE=10V, IC=0. 1mA BCW66F BCW66G BCW66H 0.02 2 V fT VCE= 10V, IC=20mA, f , =2KΩ 10 dB Transition frequency Marking BCW66F:EF ; BCW66G:EG; BCW66H :EH 100 MHz


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PDF OT-23 OT-23 BCW66F/66G/66H 10W66H 500mA BCW66F BCW66G BCW66H 500mA, BCW66F/66G/66H
2006 - bcw66fr

Abstract: No abstract text available
Text: Not Recommended for New Design Please Use BCW66H SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS ­ BCW66F ­ EF BCW66G ­ EG BCW66H ­ EH BCW66FR ­ BCW66GR ­ BCW66HR ­ 7P 5T 7M BCW66 E C B COMPLEMENTARY TYPE ­ BCW68 SOT23 ABSOLUTE MAXIMUM , 330 -55 to +150 UNIT V V V mA mA mA mW °C TBA Not Recommended for New Design Please Use BCW66H , BCW66G h FE 250 400 BCW66H h FE 350 630 Transition Frequency Output Capacitance Input


Original
PDF BCW66H BCW66F BCW66G BCW66FR BCW66GR BCW66HR BCW66 BCW68 bcw66fr
BCW66H

Abstract: marking eh sot23 bcw66g SAL1 BCW66F
Text: BCW66F EF BCW66G EG BCW66H EH • Designed for low-frequency driver stage and switching applications , €” — — BCW66H 80 — — lc = 10 mAdc, VCE = 1.0 Vdc : BCW66F BCW66G 75 110 — — BCW66H 180 — — lc = 100 mAdc, VCE = 1.0 Vdc BCW66F BCW66G 100 160 — 250 400 BCW66H 250 — 630 lc = 500 mAdc, VCE = 2.0 Vdc BCW66F BCW66G 35 60 — — BCW66H 100 — — VcE(sat) lc =


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PDF b3b72SS BCW66F BCW66G BCW66H marking eh sot23 SAL1
003A MARKING TRANSISTOR

Abstract: BCW66F BCW66G BCW66H
Text: Marking BCW66F EF BCW66G EG BCW66H EH • Designed for low-frequency driver stage and switching , 35 — — — BCW66G 50 — — BCW66H 80 — — Ir. = 10 mAdc, VCE = 1.0 Vdc : BCW66F 75 — — BCW66G 110 — — BCW66H 180 — — "c = 100 mAdc, VCE = 1.0 Vdc BCW66F 100 — 250 BCW66G 160 — 400 BCW66H 250 — 630 lo = 500 mAdc, VCE = 2.0 Vdc BCW66F 35 — — BCW66G 60 — — BCW66H 100 — — VcE(sat) lo = 500 mAdc, lB = 50 mAdc — 0.7 â


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PDF BCW66F BCW66G BCW66H b3b725s 003A MARKING TRANSISTOR
2006 - BCW65CR

Abstract: bcw66
Text: PART OBSOLETE - USE BCW66H SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - AUGUST 1995 PARTMARKING DETAILS BCW65A EA BCW65B EB BCW65C EC BCW66F EF BCW66G EG BCW66H EH COMPLEMENTARY TYPES BCW65 BCW67 BCW66 BCW68 BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR BCW66HR 4V 5V 6V 7P , 3 - 27 PART OBSOLETE - USE BCW66H BCW65 BCW66 ELECTRICAL CHARACTERISTICS (at Tamb = 25 , BCW65C hFE BCW66H 350 630 Transition Frequency Collector-Base Capacitance Emitter-Base


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PDF BCW66H BCW65A BCW65B BCW65C BCW66F BCW66G BCW65 BCW67 BCW66 BCW65CR bcw66
2009 - Not Available

Abstract: No abstract text available
Text: BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H DC Current Gain* BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H Parameter BVCBO BVCEO BVEBO ICBO IEBO 75 45 5 35 50 80 75 110 180 100 160 , Bauelemente CLASSIFICATION OF hFE(3) Part Number Rank Range Marking BCW66F BCW66G BCW66H F


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PDF BCW66 BCW68 OT-23 100mA, 500mA, 100MHz 200Hz 01-June-2002
2006 - BCW65 ec

Abstract: BCW66H BCW65AR
Text: BCW65A EA BCW65B EB BCW65C EC BCW66F EF BCW66G EG BCW66H EH COMPLEMENTARY TYPES BCW65 BCW67 BCW66 BCW68 BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR BCW66HR 4V 5V 6V 7P 5T 7M Not Recommended for New Design Please Use BCW66H BCW65 BCW66 C B E SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER , Recommended for New Design Please Use BCW66H ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise , BCW65B hFE BCW66G 250 400 BCW65C hFE BCW66H 350 630 Transition Frequency Collector-Base


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PDF BCW65A BCW65B BCW65C BCW66F BCW66G BCW66H BCW65 BCW67 BCW66 BCW68 BCW65 ec BCW66H BCW65AR
2001 - BCW65A

Abstract: No abstract text available
Text: =1.0V, IC=100mA VCE=2.0V, IC=500mA BCW66F: BCW66G: BCW66H BCW66 75 45 EF EG EH 5.0 800 , V V V V V V MHz pF pF BCW65C BCW66H MIN MAX 80 180 250 630 100 R0 ( 30 , : BCW65A: EA BCW65B: EB BCW65C: EC BCW66F: EF BCW66G: EG BCW66H EH R0 ( 30-November 2001


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PDF BCW65 BCW66 BCW65A: BCW65B: BCW65C: OT-23 500mA, 20MHz BCW65A
1997 - BCW65AR

Abstract: BCW65BR BCW66HR BCW65CR BCW66GR BCW66H BCW66G BCW66 BCW65C BCW65B
Text: 0.7 V BCW65A hFE BCW66F 35 75 100 35 50 110 160 60 BCW65C hFE BCW66H 80 180 250 , EB BCW65C EC BCW66F EF BCW66G EG BCW66H EH BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR BCW66HR 4V 5V 6V 7P 5T 7M 8 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL , 0.7 V BCW65A hFE BCW66F 35 75 100 35 50 110 160 60 BCW65C hFE BCW66H 80 180 250 , EB BCW65C EC BCW66F EF BCW66G EG BCW66H EH BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR


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PDF BCW65 BCW66 150oC BCW65AR BCW65BR BCW66HR BCW65CR BCW66GR BCW66H BCW66G BCW66 BCW65C BCW65B
FMMTA56

Abstract: FMMTA06 FMMTA05 BCW68H BCW68G BCW68F BCW66H BCW66G BCW66F BCW65A
Text: BCW68F BCW66G 75 45 1000 350 160/400 100/1 0.3 100/10 100 10 BCW68G BCW66H 75 45 1000 350 250/630 100/1 , BCW68H 60 45 1000 350 250/630 100/1 0.3 100/10 100 10 BCW66H FMMTA55 60 60 500 350 50/- 10/1 0.25 100/10


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PDF FMMTA06 FMMTA56 BCW66F BCW68F BCW66G BCW68G BCW66H BCW68H FMMTA05 FMMTA55 FMMTA56 BCW68H BCW68G BCW68F BCW65A
2001 - marking eh

Abstract: No abstract text available
Text: MCC Features omponents 20736 Marilla Street Chatsworth !"# $ % !"# BCW66H NPN Small Signal Transistor 330mW SOT-23 A D l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l Low Current, Low Voltage l Epitaxial Planar Die Construction Mechanical Data l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202, Method 208 l Marking: EH l Weight: 0.008 grams , Revision: 2 2003/04/30 BCW66H Electrical Characteristics Parameter DC Current Gain(1) at VCE = 10V


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PDF BCW66H 330mW OT-23 150oC OT-23, MIL-STD-202, 100MHz marking eh
BCW66H

Abstract: BCW66F BCW66G
Text: 23033=14 0ÜQ07b5 Ô71 BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N-P-N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH Pin configuration 1 = base 2= emitter 3 = collector 2.6 2.4 0.60 0.40 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.48 0.38 3 _L02 0.89" _2.00_ 1.80 0.14 0.09 § R0.1 (004)- 0.12 0.02 I fvRQ.05 " (.002) J.15_ 0.90 _L 0.70 0.50 "1 , Manufacturer QDIIL BCW66F, BCW66G BCW66H RATINGS (at Ta = 25°C unless otherwise specified) Limiting values


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PDF Q07b5 BCW66F, BCW66G BCW66H BCW66F E3833C1M 00007b3 BCW66H
Not Available

Abstract: No abstract text available
Text: pF BCW65C BCW66H MIN MAX 80 180 250 630 100 R2 (20-November 2009) BCW65 SERIES BCW66 , BCW66F EF BCW66G EG BCW66H EH R2 (20-November 2009) w w w. c e n t r a l s e m i . c o


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PDF BCW65 BCW66 OT-23 IC-65 BCW65A BCW66F BCW65B BCW66G
1997 - BCW65A

Abstract: BCW65B BCW65BR BCW66H BCW65 BCW66G BCW66FR BCW66F BCW65CR BCW65C
Text: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3- AUGUST PARTMARKING I DETAILS EA BCW65A13 - BCW65B - EB BCW65BR - EC BCW65CR - f 5V BCW65C - I ( 1995 6V 7P BCW65A - 4V BCW66F - EF BCW66FR - BCW66G - EG BCW66GF - 5T BCW66H - EH BCW66HF - 7M COMPLEMENTARY TYPES BCW65 - BCW66 - - , Current Transfer BCW65A hFE BCW66F BCW65B h~~ BCW66G 50 110 160 60 mBCW65C hFE BCW66H


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PDF BCW65 BCW66 BCW65A13 BCW65B BCW65BR BCW65CR BCW65C BCW65A BCW66F BCW66FR BCW66H BCW65 BCW66G
BCW66

Abstract: BCW65 BCW65A BCW67 BCW68 bcw66fr
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - AUGUST 1995_ BCW65 BCW66 PARTMARKING DETAILS -BCW65A- EA BCW65B- EB BCW65C- EC BCW66F- EF BCW66G- EG BCW66H- EH COMPLEMENTARY TYPES -BCW65 - BCW67 BCW66 - BCW68 BCW65AR - 4V BCW65BR - 5V BCW65CR - 6V BCW66FR - 7P BCW66GR - 5T BCW66HR- 7M ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCW65 BCW66 UNIT Collector-Base Voltage Vcbo 60 75 V , 250 400 I^IOOuA, VCE=10V 1,;= 10mA, VCE= IV I^IOOmA, VŒ = IV* l^öOOmA, VCE = 2V* BCW65C BCW66H hfe


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PDF BCW65 BCW66 -BCW65A- BCW65B- BCW65C- BCW66F- BCW66G- BCW66H- -BCW65 BCW67 BCW65A BCW68 bcw66fr
Not Available

Abstract: No abstract text available
Text: BCW68G 0.25 FMMTA56 BCW66H 75 45 1000 350 250/630 100/1 0.3 100/10 , BCW66H FMMTA55 60 60 500 350 50/- 10/1 0.25 100/10 100§ - FMMTA05


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PDF OT-23 FMMTA06 BCW66F BCW66G BCW68F BCW68G FMMTA56 BCW66H FMMTA55
marking k4

Abstract: BFQ31 BCW33 BCW32 BCW31 BCW30 BCW29 BCV72 BCV71 FMMT2222A
Text: EC — FMMT-A12 3W _ BCW66F EF 7P FMMT-A13 IM 5T _ BCW66G EG BCW66H EH _ FMMT-A14 1N â , BCW68G BCW66H 75 45 1000 350 250/630 100/1 0.3 100/10 100 10 BCW68H FMMTA05 60 80 500 350 50/- 10/1 , /400 100/1 0.3 100/10 100 10 BCW66G BCW68H 60 45 1000 350 250/630 100/1 0.3 100/10 100 10 BCW66H


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PDF OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 marking k4 BCW33 FMMT2222A
2006 - BCW66FR

Abstract: BCW66HR vce 1v BCW66 BCW66F BCW66G BCW66GR BCW66H BCW68
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS ­ BCW66F ­ EF BCW66G ­ EG BCW66H ­ EH BCW66FR ­ BCW66GR ­ BCW66HR ­ BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE ­ BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 75 V Collector-Emitter Voltage V CEO 45 , h FE BCW66H h FE Transition Frequency fT Output Capacitance 250 180 250 100


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PDF BCW66F BCW66G BCW66H BCW66FR BCW66GR BCW66HR BCW66 BCW68 100mA, BCW66FR BCW66HR vce 1v BCW66 BCW66F BCW66G BCW66GR BCW66H BCW68
2003 - MARKING CODE EA

Abstract: BCW66H BCW65A transistor marking code SOT-23 transistor EH sot-23 EA transistor transistor BCW66F/66G/BCW66 marking code 5 BCW65 BCW65B
Text: 60 UNITS nA µA nA V V V V V V V V V MHz pF pF BCW65C BCW66H MIN MAX 80 180 , BCW65C EC BCW66F EF BCW66G EG BCW66H EH R1 (20-February 2003) Central


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PDF BCW65 BCW66 OT-23 100mA 500mA BCW65A BCW66F BCW65B MARKING CODE EA BCW66H BCW65A transistor marking code SOT-23 transistor EH sot-23 EA transistor transistor BCW66F/66G/BCW66 marking code 5 BCW65B
Not Available

Abstract: No abstract text available
Text: L BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor M arking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLIN E DETAILS A LL DIM ENSIONS IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 ■COLLECTOR _1.02 0.60 0.40 ABSOLUTE M AXIM UM RATIN GS Collector-base voltage {open emitter) Collector-emitter , BCW66F, BCW66G BCW66H RATIN GS (at T a = 25°C unless otherwise specified) Limiting values


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PDF BCW66F, BCW66G BCW66H 180put
Supplyframe Tracking Pixel