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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BCW66G Fairchild Semiconductor Corporation Bristol Electronics 2,494 - -
BCW66G ON Semiconductor Avnet 3,000 - -
BCW66G SPC Multicomp Farnell element14 3,159 £0.13 £0.04
BCW66G ON Semiconductor Farnell element14 1,562 £0.17 £0.06
BCW66G SPC Multicomp element14 Asia-Pacific 2,970 $0.08 $0.03
BCW66G ON Semiconductor element14 Asia-Pacific 6,201 $0.34 $0.04
BCW66G ON Semiconductor element14 Asia-Pacific 6,201 $0.34 $0.04
BCW66G Mistral S P A ComS.I.T. 2,895 - -
BCW66G SPC Multicomp Newark element14 2,970 $0.21 $0.05
BCW66G Zetex / Diodes Inc Bristol Electronics 12,000 - -
BCW66G Fairchild Semiconductor Corporation Rochester Electronics 401,630 $0.05 $0.04
BCW66GE6327 Infineon Technologies AG ComS.I.T. 3,000 - -
BCW66GLT1 Motorola Semiconductor Products Bristol Electronics 2,100 - -
BCW66GLT1 ON Semiconductor Bristol Electronics 1,125 $0.11 $0.03
BCW66GLT1G ON Semiconductor Chip1Stop 289 $0.05 $0.05
BCW66GLT1G ON Semiconductor Farnell element14 1,020 £0.13 £0.03
BCW66GLT1G ON Semiconductor Newark element14 270 $0.17 $0.04
BCW66GLT1G ON Semiconductor element14 Asia-Pacific - $0.03 $0.02
BCW66GLT1G ON Semiconductor Future Electronics - $0.12 $0.02
BCW66GLT1G ON SEMICONDUCTOR New Advantage Corporation 96,200 $0.04 $0.04
BCW66GLT1G ON Semiconductor element14 Asia-Pacific 1,317 $0.12 $0.02
BCW66GLT1G ON Semiconductor Rochester Electronics 1,077,000 $0.04 $0.03
BCW66GLT1G ON Semiconductor ComS.I.T. 6,000 - -
BCW66GLT1G ON Semiconductor Future Electronics - $0.01 $0.01
BCW66GLT1G ON Semiconductor Avnet - $0.03 $0.02
BCW66GLT1G ON Semiconductor Avnet - $0.03 $0.02
BCW66GLT1G ON Semiconductor Wuhan P&S 2,400 $0.04 $0.02
BCW66GLT3G ON Semiconductor Avnet - $0.02 $0.02
BCW66GLT3G ON Semiconductor Rochester Electronics 10,000 $0.02 $0.02
BCW66GLT3G ON Semiconductor Allied Electronics & Automation 80 $0.02 $0.02
BCW66GR Nexperia Avnet - $0.01 $0.01
BCW66GVL Nexperia Avnet - $0.01 $0.01
SBCW66GLT1G ON Semiconductor Avnet - $0.07 $0.06
SBCW66GLT1G ON Semiconductor Chip1Stop 3,000 $0.10 $0.07
SBCW66GLT1G ON Semiconductor Avnet - $0.05 $0.05

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BCW66G datasheet (36)

Part Manufacturer Description Type PDF
BCW66G Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
BCW66G Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
BCW66G Infineon Technologies NPN Silicon AF Transistor Original PDF
BCW66G Siemens NPN Silicon AF Transistors (For general AF applications High current gain) Original PDF
BCW66G STMicroelectronics SMALL SIGNAL NPN TRANSISTORS Original PDF
BCW66G Zetex Semiconductors SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Original PDF
BCW66G Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan PDF
BCW66G Continental Device India General Purpose Transistor Scan PDF
BCW66G Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan PDF
BCW66G Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
BCW66G Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan PDF
BCW66G General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - TRANSISTOR, bipolar, small signal, plastic, NPN, pkg: SOT-23 (surface mount) Scan PDF
BCW66G International Rectifier HEXFET Power MOSFET Scan PDF
BCW66G Motorola Small-signal NPN transistor. Scan PDF
BCW66G Others Transistor Shortform Datasheet & Cross References Scan PDF
BCW66G Others Shortform Transistor PDF Datasheet Scan PDF
BCW66G Others Shortform Transistor PDF Datasheet Scan PDF
BCW66G Others Diode, Transistor, Thyristor Datasheets and more Scan PDF
BCW66G Others Shortform Transistor Datasheet Guide Scan PDF
BCW66G Siemens Semiconductor Data Book (German) 1976/77 Scan PDF

BCW66G Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - Not Available

Abstract: No abstract text available
Text: detailed qualification data Product BCW66G BCW66G_D87Z back to top © 2007 Fairchild Semiconductor , Year Coding) Line 2: EG BCW66G_D87Z Full Production N/A SOT-23 3 TAPE REEL Line 1 , BCW66G BCW66G NPN General Purpose Amplifier · This device is designed for general purpose , Corporation Rev. A1, August 2002 BCW66G Thermal Characteristics Symbol PD RJA Total Device , Units mW mW/°C °C/W ©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002 BCW66G


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PDF BCW66G 500mA. OT-23 150degrees BCW66G
30255

Abstract: qSOT-23
Text: -freq u en cy d river s ta g e an d switching applications. t =i B Device BCW66F BCW66G BCW66H cr , Vdc, lc = 0, TA = 150°C VE B = 4.0 Vdc, lc = 0 lc = 100 ixAdc, VC E = 1.0 Vdc BCW66F BCW66G BCW66H : BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H Min 45 5.0 75 - - - 35 50 80 75 110


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PDF b3b72SS BCW66F BCW66G BCW66H b3b725S 30255 qSOT-23
2007 - Not Available

Abstract: No abstract text available
Text: Marking: BCW66F:EF; BCW66G :EG; ℃ BCW66H:EH ELECTRICAL CHARACTERISTICS (Ta=25℃ unless , voltage VCE=10V, IC=0. 1mA BCW66F BCW66G BCW66H VCE=1V, IC= 10mA BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H hFE1 hFE2 DC current gain * VCE=1V, IC


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PDF OT-23 OT-23 BCW66F/66G/66H BCW68 BCW66F BCW66G BCW66H BCW66G BCW66H BCW66F
2004 - BCW66F/66G/66H

Abstract: No abstract text available
Text: VCE=1V, IC= 10mA BCW66F BCW66G BCW66H VCE=1V, IC= 100mA BCW66F BCW66G BCW66H VCE=2V, IC= 500mA BCW66F BCW66G BCW66H µA 0.02 µA 35 50 80 75 110 180 100 160 250 35 60 , VCE=10V, IC=0. 1mA BCW66F BCW66G BCW66H 0.02 2 V fT VCE= 10V, IC=20mA, f , =2KΩ 10 dB Transition frequency Marking BCW66F:EF ; BCW66G :EG; BCW66H:EH 100 MHz


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PDF OT-23 OT-23 BCW66F/66G/66H 10W66H 500mA BCW66F BCW66G BCW66H 500mA, BCW66F/66G/66H
BCW66H

Abstract: marking eh sot23 bcw66g SAL1 BCW66F
Text: BCW66F EF BCW66G EG BCW66H EH • Designed for low-frequency driver stage and switching applications , 'ebo VFB = 4.0 Vdc, lc = 0 — — 20 nAdc hFE lc = 100 ixAdc, VCE = 1.0 Vdc BCW66F BCW66G 35 50 — — — BCW66H 80 — — lc = 10 mAdc, VCE = 1.0 Vdc : BCW66F BCW66G 75 110 — — BCW66H 180 — — lc = 100 mAdc, VCE = 1.0 Vdc BCW66F BCW66G 100 160 — 250 400 BCW66H 250 — 630 lc = 500 mAdc, VCE = 2.0 Vdc BCW66F BCW66G 35 60 — — BCW66H 100 — — VcE(sat) lc =


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PDF b3b72SS BCW66F BCW66G BCW66H marking eh sot23 SAL1
003A MARKING TRANSISTOR

Abstract: BCW66F BCW66G BCW66H
Text: Marking BCW66F EF BCW66G EG BCW66H EH • Designed for low-frequency driver stage and switching , 35 — — — BCW66G 50 — — BCW66H 80 — — Ir. = 10 mAdc, VCE = 1.0 Vdc : BCW66F 75 — — BCW66G 110 — — BCW66H 180 — — "c = 100 mAdc, VCE = 1.0 Vdc BCW66F 100 — 250 BCW66G 160 — 400 BCW66H 250 — 630 lo = 500 mAdc, VCE = 2.0 Vdc BCW66F 35 — — BCW66G 60 — — BCW66H 100 — — VcE(sat) lo = 500 mAdc, lB = 50 mAdc — 0.7 â


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PDF BCW66F BCW66G BCW66H b3b725s 003A MARKING TRANSISTOR
2006 - bcw66h

Abstract: No abstract text available
Text: ­ ­ ­ ­ ­ 250 400 630 ­ ­ ­ BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE 35 50 80 75 100 180 100 160 250 ­ ­ ­ , Stempelung CEBO RthA ­ 60 pF < 420 K/W 1) BCW68F . BCW68H BCW66F = EF BCW66G = EG BCW66H = EH ­ CCBO ­ 6 pF


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PDF BCW66F BCW66H BCW66H OT-23 O-236) UL94V-0 BCW68F BCW68H
2001 - Fairchild Semiconductor - Process

Abstract: No abstract text available
Text: BCW66G BCW66G NPN General Purpose Amplifier · This device is designed for general purpose , Corporation Rev. A, December 2001 BCW66G Thermal Characteristics Symbol PD RJA Total Device , Units mW mW/°C °C/W ©2001 Fairchild Semiconductor Corporation Rev. A, December 2001 BCW66G , Rev. H4 Product Folder - Fairchild P/N BCW66G - NPN General Purpose Amplifier SEARCH , GO space space space >> Find products >> Home find products space space space BCW66G Related Links


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PDF BCW66G 500mA. OT-23 150degrees BCW66G Fairchild Semiconductor - Process
BCW66F

Abstract: BCW66G BCW66H BCW68F BCW68H
Text: 100 µA 35 50 80 ­ ­ ­ ­ ­ ­ BCW66F BCW66G BCW66H hFE hFE hFE 75 100 180 ­ ­ ­ ­ ­ ­ VCE = 1 V, IC = 100 mA BCW66F BCW66G BCW66H hFE hFE hFE 100 160 , = 10 mA 1 BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H hFE hFE hFE ­ ­ ­ 35 , . BCW68H BCW66F = EF BCW66G = EG BCW66H = EH Tested with pulses tp = 300 µs, duty cycle 2% ­


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PDF BCW66F BCW66H OT-23 O-236) UL94V-0 BCW68F BCW66F BCW66G BCW66H BCW68F BCW68H
2002 - BCW66G

Abstract: No abstract text available
Text: BCW66G BCW66G NPN General Purpose Amplifier · This device is designed for general purpose amplifier applications at collector currents to 500mA. · Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise , Semiconductor Corporation Min. Typ. Rev. A1, August 2002 BCW66G Thermal Characteristics BCW66G Package Dimensions ±0.10 ±0.10 1.30 0.40 ±0.03 2.40 0.45~0.60 0.20 MIN


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PDF BCW66G 500mA. OT-23 BCW66G
1997 - BCW65AR

Abstract: BCW65BR BCW66HR BCW65CR BCW66GR BCW66H BCW66G BCW66 BCW65C BCW65B
Text: EB BCW65C EC BCW66F EF BCW66G EG BCW66H EH BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR , EB BCW65C EC BCW66F EF BCW66G EG BCW66H EH BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR , 160 IC=100mA, IB =10mA IC= 500mA, IB =50mA* 2 VBE(SAT) BCW65B hFE BCW66G Static , 160 IC=100mA, IB =10mA IC= 500mA, IB =50mA* 2 VBE(SAT) BCW65B hFE BCW66G Static


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PDF BCW65 BCW66 150oC BCW65AR BCW65BR BCW66HR BCW65CR BCW66GR BCW66H BCW66G BCW66 BCW65C BCW65B
FMMTA56

Abstract: FMMTA06 FMMTA05 BCW68H BCW68G BCW68F BCW66H BCW66G BCW66F BCW65A
Text: BCW68F BCW66G 75 45 1000 350 160/400 100/1 0.3 100/10 100 10 BCW68G BCW66H 75 45 1000 350 250/630 100/1 , /250 100/1 0.3 100/10 100 10 BCW66F BCW68G 60 45 1000 350 160/400 100/1 0.3 100/10 100 10 BCW66G


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PDF FMMTA06 FMMTA56 BCW66F BCW68F BCW66G BCW68G BCW66H BCW68H FMMTA05 FMMTA55 FMMTA56 BCW68H BCW68G BCW68F BCW65A
2009 - Not Available

Abstract: No abstract text available
Text: BCW66F BCW66G BCW66H BCW66F BCW66G BCW66H DC Current Gain* BCW66F BCW66G BCW66H BCW66F BCW66G , Bauelemente CLASSIFICATION OF hFE(3) Part Number Rank Range Marking BCW66F BCW66G BCW66H F


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PDF BCW66 BCW68 OT-23 100mA, 500mA, 100MHz 200Hz 01-June-2002
2002 - BCW66G

Abstract: BCW68G vishay MARKING 09
Text: BCW66G Vishay Semiconductors formerly General Semiconductor Small Signal Transistor (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Mounting Pad Layout Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 1. Base 2. Emitter 3. Collector .007 (0.175) .005 (0.125 , -May-02 www.vishay.com 1 BCW66G Vishay Semiconductors formerly General Semiconductor Electrical Characteristics , Document Number 88172 09-May-02 BCW66G Vishay Semiconductors formerly General Semiconductor Fig


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PDF BCW66G O-236AB OT-23) OT-23 E8/10K 30K/box 100mA 500mA 20MHz 09-May-02 BCW66G BCW68G vishay MARKING 09
2001 - BCW66G

Abstract: No abstract text available
Text: BCW66G BCW66G NPN General Purpose Amplifier 3 · This device is designed for general purpose amplifier applications at collector currents to 500mA. · Sourced from process 19. 2 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings * TC=25°C unless otherwise noted , Semiconductor Corporation Min. Typ. Rev. A, December 2001 BCW66G Thermal Characteristics BCW66G Package Demensions ±0.10 ±0.10 1.30 0.40 ±0.03 2.40 0.45~0.60 0.20 MIN


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PDF BCW66G 500mA. OT-23 BCW66G
2001 - BCW65A

Abstract: No abstract text available
Text: =1.0V, IC=100mA VCE=2.0V, IC=500mA BCW66F: BCW66G : BCW66H BCW66 75 45 EF EG EH 5.0 800 , 0.3 0.7 1.25 2.0 BCW65B BCW66G MIN MAX 50 110 160 400 60 UNITS nA µA nA V V V , : BCW65A: EA BCW65B: EB BCW65C: EC BCW66F: EF BCW66G : EG BCW66H EH R0 ( 30-November 2001


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PDF BCW65 BCW66 BCW65A: BCW65B: BCW65C: OT-23 500mA, 20MHz BCW65A
2000 - Not Available

Abstract: No abstract text available
Text: BCW66G Small Signal Transistor (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33) Top View Mounting Pad Layout 0.037 (0.95) 0.037 (0.95) Pin Configuration 1. Base 2. Emitter 3. Collector 1 2 max. .004 (0.1) 0.079 (2.0) 0.035 (0.9) 045 (1 15) .007 , °C °C/W °C/W 6/15/00 215 BCW66G Small Signal Transistor (NPN) Electrical Characteristics , 20 20 nA µA nA fT CCB CEB ­ ­ ­ 170 6 60 ­ ­ ­ MHZ pF pF BCW66G Small Signal


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PDF BCW66G O-236AB OT-23) BCW68G OT-23 20MHz
2009 - BCW66G

Abstract: BCW68G vishay TRANSISTOR Sot-23 MARKING CODE
Text: BCW66G Vishay Semiconductors formerly General Semiconductor Small Signal Transistor (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Mounting Pad Layout Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) 1. Base 2. Emitter 3. Collector .007 (0.175) .005 (0.125 , -May-02 www.vishay.com 1 BCW66G Vishay Semiconductors formerly General Semiconductor Electrical Characteristics , Document Number 88172 09-May-02 BCW66G Vishay Semiconductors formerly General Semiconductor Fig


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PDF BCW66G O-236AB OT-23) OT-23 E8/10K 30K/box 18-Jul-08 BCW66G BCW68G vishay TRANSISTOR Sot-23 MARKING CODE
2005 - vishay TRANSISTOR Sot-23 MARKING CODE

Abstract: No abstract text available
Text: BCW66G Vishay Semiconductors formerly General Semiconductor Small Signal Transistor (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33) Top View Mounting Pad Layout 0.031 (0.8) Pin Configuration 1. Base 2. Emitter 3. Collector 0.035 (0.9) 0.079 , Number 88172 09-May-02 www.vishay.com 1 BCW66G Vishay Semiconductors formerly General , MHZ pF pF www.vishay.com 2 Document Number 88172 09-May-02 BCW66G Vishay Semiconductors


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PDF BCW66G O-236AB OT-23) OT-23 E8/10K 30K/box 30K/box 08-Apr-05 vishay TRANSISTOR Sot-23 MARKING CODE
Not Available

Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transisto r Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base , Ptot 60 100 35 V V V mA mW Page 1 of 3 BCW66F, BCW66G BCW66H RATINGS (at T A


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PDF OT-23 BCW66F, BCW66G BCW66H C-120
Not Available

Abstract: No abstract text available
Text: L BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N -P -N transistor M arking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLIN E DETAILS A LL DIM ENSIONS IN m m _3.0 2 .8" 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 ■COLLECTOR _1.02 0.60 0.40 ABSOLUTE M AXIM UM RATIN GS Collector-base voltage {open emitter) Collector-emitter , BCW66F, BCW66G BCW66H RATIN GS (at T a = 25°C unless otherwise specified) Limiting values


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PDF BCW66F, BCW66G BCW66H 180put
1997 - BCW65A

Abstract: BCW65B BCW65BR BCW66H BCW65 BCW66G BCW66FR BCW66F BCW65CR BCW65C
Text: BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3- AUGUST PARTMARKING I DETAILS EA BCW65A13 - BCW65B - EB BCW65BR - EC BCW65CR - f 5V BCW65C - I ( 1995 6V 7P BCW65A - 4V BCW66F - EF BCW66FR - BCW66G - EG BCW66GF - 5T BCW66H - EH BCW66HF - 7M COMPLEMENTARY TYPES BCW65 - BCW66 - - , Current Transfer BCW65A hFE BCW66F BCW65B h~~ BCW66G 50 110 160 60 mBCW65C hFE BCW66H


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PDF BCW65 BCW66 BCW65A13 BCW65B BCW65BR BCW65CR BCW65C BCW65A BCW66F BCW66FR BCW66H BCW65 BCW66G
2006 - BCW65CR

Abstract: bcw66
Text: PART OBSOLETE - USE BCW66H SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - AUGUST 1995 PARTMARKING DETAILS BCW65A EA BCW65B EB BCW65C EC BCW66F EF BCW66G EG BCW66H EH COMPLEMENTARY TYPES BCW65 BCW67 BCW66 BCW68 BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR BCW66HR 4V 5V 6V 7P 5T 7M BCW65 BCW66 C B E SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage , nA nA 0.3 V 0.7 V 2 V BCW65A hFE BCW66F 160 250 BCW65B hFE BCW66G 250 400


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PDF BCW66H BCW65A BCW65B BCW65C BCW66F BCW66G BCW65 BCW67 BCW66 BCW65CR bcw66
BCW66

Abstract: BCW65 BCW65A BCW67 BCW68 bcw66fr
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - AUGUST 1995_ BCW65 BCW66 PARTMARKING DETAILS -BCW65A- EA BCW65B- EB BCW65C- EC BCW66F- EF BCW66G- EG BCW66H- EH COMPLEMENTARY TYPES -BCW65 - BCW67 BCW66 - BCW68 BCW65AR - 4V BCW65BR - 5V BCW65CR - 6V BCW66FR - 7P BCW66GR - 5T BCW66HR- 7M ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCW65 BCW66 UNIT Collector-Base Voltage Vcbo 60 75 V , I^IOOpA, VCE=10V Iq— 10mA, Vœ= IV I^IOOmA, VCE= 1V* I^SOOmA, VCE= 2V* BCW65B BCW66G hfe 50 110 160 60


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PDF BCW65 BCW66 -BCW65A- BCW65B- BCW65C- BCW66F- BCW66G- BCW66H- -BCW65 BCW67 BCW65A BCW68 bcw66fr
2006 - BCW66FR

Abstract: BCW66HR vce 1v BCW66 BCW66F BCW66G BCW66GR BCW66H BCW68
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS ­ BCW66F ­ EF BCW66G ­ EG BCW66H ­ EH BCW66FR ­ BCW66GR ­ BCW66HR ­ BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE ­ BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 75 V Collector-Emitter Voltage V CEO 45 , V BE(sat) 2 IC=500mA, IB=50mA* Static Forward Current Transfer BCW66F h FE BCW66G


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PDF BCW66F BCW66G BCW66H BCW66FR BCW66GR BCW66HR BCW66 BCW68 100mA, BCW66FR BCW66HR vce 1v BCW66 BCW66F BCW66G BCW66GR BCW66H BCW68
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