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Part Manufacturer Description Datasheet Download Buy Part
BCW61DTA Diodes Incorporated Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon
BCW61DE6327HTSA1 Infineon Technologies AG Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BCW 61D E6327 Infineon Technologies AG Avnet 6,000 €0.02 €0.02
BCW 61D E6327 Infineon Technologies AG Avnet - €0.03 €0.02
BCW 61D E6327 Infineon Technologies AG Rochester Electronics 30,000 $0.02 $0.02
BCW61D Nexperia Farnell element14 81 £0.17 £0.06
BCW61D Nexperia element14 Asia-Pacific 41 $0.16 $0.03
BCW61D Philips Semiconductors ComS.I.T. 3,000 - -
BCW61D Philips Semiconductors Bristol Electronics 4,690 - -
BCW61D T/R Lumileds Bristol Electronics 3,486 - -
BCW61D T/R Philips Semiconductors Bristol Electronics 4,073 - -
BCW61D,215 Nexperia Avnet - - -
BCW61D,215 Nexperia Avnet 21,000 $0.03 $0.03
BCW61D,215 Nexperia Avnet 27,000 €0.03 €0.02
BCW61D,215 Nexperia New Advantage Corporation 135,000 $0.08 $0.08
BCW61D215 NXP Semiconductors Rochester Electronics 65,390 $0.04 $0.03
BCW61DE-6327 Infineon Technologies AG Chip One Exchange 2,921 - -
BCW61DE6327 Infineon Technologies AG ComS.I.T. 2,940 - -
BCW61DE6327 Infineon Technologies AG TME Electronic Components 7,735 $0.03 $0.02
BCW61DE6327 Infineon Technologies AG Rochester Electronics 64,915 $0.02 $0.02
BCW61DE6327HTSA1 Infineon Technologies AG Rochester Electronics 30,000 $0.02 $0.02
BCW61DE6327HTSA1 Infineon Technologies AG Schukat electronic 4,500 €0.03 €0.02
BCW61DE6327HTSA1 Infineon Technologies AG RS Components 5,700 £0.02 £0.02
BCW61DE6327HTSA1 Infineon Technologies AG Avnet - $0.02 $0.02
BCW61DLT Philips Semiconductors Bristol Electronics 2,655 - -
BCW61DLT1 ON Semiconductor Rochester Electronics 9,000 $0.04 $0.03

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BCW61D datasheet (54)

Part Manufacturer Description Type PDF
BCW61D Central Semiconductor SURFACE MOUNT PNP SILICON TRANSISTOR Original PDF
BCW61D Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
BCW61D Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
BCW61D Fairchild Semiconductor PNP Epitaxial Silicon Transistor Original PDF
BCW61D Fairchild Semiconductor PNP EPITAXIAL SILICON TRANSISTOR Original PDF
BCW61D Infineon Technologies SOT23 package Original PDF
BCW61D Infineon Technologies Ic = 100 mA; Package: PG-SOT23-3; Polarity: PNP; V<sub>CEO</sub> (max): 32.0 V; V<sub>CBO</sub> (max): 32.0 V; I<sub>C</sub>(max): 100.0 mA; I<sub>CM</sub> (max): 200.0 mA; Original PDF
BCW61D Kexin General Purpose Transistor Original PDF
BCW61D NXP Semiconductors BCW61D - PNP general purpose transistors - Complement: BCW60D ; fT min: 100 MHz; hFE max: 630 ; hFE min: 380 ; IC max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 32 V Original PDF
BCW61D Philips Semiconductors PNP General Purpose Transistor Original PDF
BCW61D Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
BCW61D Siemens PNP Silicon AF Transistors (For AF input stages and driver applications High current gain) Original PDF
BCW61D TY Semiconductor General Purpose Transistor - SOT-23 Original PDF
BCW61D Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan PDF
BCW61D Continental Device India Silicon Planar Epitaxial Transistors Scan PDF
BCW61D Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan PDF
BCW61D Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan PDF
BCW61D Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
BCW61D ITT Semiconductors TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 200MA I(C) | TO-236 Scan PDF
BCW61D Motorola PNP silicon general purpose transistor. Scan PDF

BCW61D Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - bc 357 transistor

Abstract: BCW61C-BC transistor BC SERIES BCW61C transistor W-32 BC transistor series BCW61D BCW61B transistor BC 55 Bcw61d sot23
Text: BCW61B BCW61C BCW61D w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON , , low noise applications. MARKING CODES: BCW61B : BB BCW61C : BC BCW61D : BD SOT-23 CASE MAXIMUM , MAX 40 250 460 100 250 500 BCW61D MIN MAX 100 380 630 100 350 700 R2 (20-November 2009) BCW61B BCW61C BCW61D SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODES: BCW61B : BCW61C : BCW61D


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PDF BCW61B BCW61C BCW61D BCW61B OT-23 bc 357 transistor BCW61C-BC transistor BC SERIES BCW61C transistor W-32 BC transistor series BCW61D transistor BC 55 Bcw61d sot23
2006 - BCW61A

Abstract: No abstract text available
Text: BCW61A . BCW61D BCW61A . BCW61D PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Power dissipation ­ Verlustleistung 2.9 0.4 , BCW61D BCW61A BCW61B BCW61C BCW61D BCW61A BCW61B BCW61C BCW61D hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE , 1 BCW61A . BCW61D Characteristics (Tj = 25°C) Min. Collector-Emitter saturation voltage ­ , . BCW60D BCW61A BCW61B BCW61C BCW61D = = = = BA BB BC BD 6 dB CEBO ­ 11 pF ­ CCBO ­ 4.5 pF ­ fT 100


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PDF BCW61A BCW61D BCW61D OT-23 O-236) UL94V-0 BCW60A BCW60D BCW61A
transistor smd marking BA

Abstract: No abstract text available
Text: ; VCE = -5 V 40 BCW61D BCW61B DC current gain 100 180 310 250 460 380 630 hFE BCW61C IC = -2 mA; VCE = -5 V BCW61D BCW61B DC current gain 80 hFE BCW61C IC = -50 mA; VCE = -5 V 100 BCW61D 110 -60 -250 mV -120 -550 mV IC = -10 mA , 0.02. Marking TYPE BCW61A BCW61B BCW61C BCW61D Marking BA BB BC BD


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PDF BCW61A/B/C/D OT-23 BCW61A BCW61B BCW61C BCW61D transistor smd marking BA
transistor bc 537

Abstract: BCW61A BCW61C TRANSISTOR BV 32 BD marking BCW61D
Text: Current Gain :BCW61B BCW61C BCW61D BCW61A BCW61B BCW61C BCW61D BCW61A BCW61B BCW61C BCW61D , MARK. BCW61A BA BCW61B BB BCW61C BC BCW61D BD Marking R B A ^ B 537 ELECTRONICS


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PDF BCW61A/B/C/D KST5086 OT-23 BCW61B BCW61C BCW61D BCW61A transistor bc 537 TRANSISTOR BV 32 BD marking
2002 - Not Available

Abstract: No abstract text available
Text: Central BCW61B BCW61C BCW61D TM Semiconductor Corp. SURFACE MOUNT PNP SILICON , , low noise applications. MARKING CODE: BCW61B: BB BCW61C: BC BCW61D : BD SOT-23 CASE MAXIMUM , BCW61D MIN MAX 100 380 630 100 350 700 R0 ( 16-May 2002) Central TM BCW61B BCW61C BCW61D Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODE: BCW61B: BB BCW61C: BC BCW61D : BD


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PDF BCW61B BCW61C BCW61D BCW61B: BCW61C: BCW61D: OT-23 200Hz
2004 - BCW61A

Abstract: No abstract text available
Text: . 8.8 mg Marking: BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD Packaging Codes/Options: GS18 / 10 k , condition - VCE = 5 V, - IC = 10 µA Part BCW61A BCW61B BCW61C BCW61D - VCE = 5 V, - IC = 2 mA BCW61A BCW61B BCW61C BCW61D - VCE = 1 V, - IC = 50 mA BCW61B BCW61B BCW61C BCW61D Collector - emitter saturation , 2 mA, f = 1.0 kHz BCW61A BCW61B BCW61C BCW61D Turn - on time RL = 990 (see fig.1) - VCC = 10 V, -


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PDF BCW61 BCW60 OT-23 BCW61A BCW61B BCW61C BCW61D D-74025 19-Aug-04 BCW61A
2003 - bc 357 transistor

Abstract: bc 357 transistor datasheet BCW61B BCW61C BCW61C-BC transistor BC SERIES transistor BC 55 PNP Epitaxial Silicon Transistor sot-23 BD 140 transistor transistor BD 140
Text: BCW61B BCW61C BCW61D SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor , , low noise applications. MARKING CODES: BCW61B : BB BCW61C : BC BCW61D : BD SOT-23 CASE MAXIMUM , nA µA V V V V V V V pF ns ns BCW61D MIN MAX 100 380 630 100 350 700 R1 (20-February 2003) Central TM BCW61B BCW61C BCW61D Semiconductor Corp. SURFACE MOUNT PNP SILICON , : BCW61B : BB BCW61C : BC BCW61D : BD R1 (20-February 2003) Central Semiconductor


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PDF BCW61B BCW61C BCW61D OT-23 200Hz bc 357 transistor bc 357 transistor datasheet BCW61B BCW61C BCW61C-BC transistor BC SERIES transistor BC 55 PNP Epitaxial Silicon Transistor sot-23 BD 140 transistor transistor BD 140
BCW60A

Abstract: BCW60D BCW61A BCW61B BCW61C BCW61D
Text: BCW61A . BCW61D BCW61A . BCW61D Surface Mount General Purpose Si-Epi-Planar Transistors , 10 µA 20 30 40 100 140 200 300 460 ­ ­ ­ ­ BCW61A BCW61B BCW61C BCW61D hFE , 50 mA 2 hFE hFE hFE hFE - VCE = 5 V, - IC = 2 mA 1 BCW61A BCW61B BCW61C BCW61D BCW61A BCW61B BCW61C BCW61D hFE hFE hFE hFE 60 80 100 110 ­ ­ ­ ­ ­ ­ ­ ­ , BCW61A . BCW61D Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. - VCEsat


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PDF BCW61A BCW61D OT-23 O-236) UL94V-0 BCW60A BCW60D BCW60A BCW60D BCW61A BCW61B BCW61C BCW61D
Not Available

Abstract: No abstract text available
Text: o Value 32 32 5.0 100 Til ·c BCW61A, BCW61B BCW61C, BCW61D CASE 318-02/03, STYLE 6 SOT , . BCW61A = BA; BCW61B = BB; BCW61C = BC; BCW61D = BD ELECTRICAL CHARACTERISTICS (T/^ = 25°C unless , BCW61C BCW61D BCW61A BCW61B BCW61C BCW61D BCW61A BCW61B BCW61C BCW61D hfe BCW61A BCW61B BCW61C BCW61D VcE , DeTJ t>3b7ESM a o a n s D 96D 81950 D BCW61A, BCW61B, BCW61C, BCW61D ELECTRICAL CHARACTERISTICS


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PDF BCW61A, BCW61B BCW61C, BCW61D OT-23 O-236AA/AB) BCW61B,
BCw610

Abstract: transistor marking code 431 BCW61B
Text: BCW61A BCW61B 8CW61C BCW61D transition frequency Tamb - 25 °C open emitter open base CONDITIONS lc = , BCW61C BCW61D DC current gain BCW61A BCW61B BCW61C BCW61D DC current gain BCW61A BCW61B BCW 6IC BCW61D


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PDF BCW61 BCW60. BCW61A BCW61B BCW61C BCW610 8CW61C BCw610 transistor marking code 431
transistor mark BA

Abstract: No abstract text available
Text: :BCW61 B BCW61C BCW61D :BCW61 A BCW61B BCW61C BCW61D :BCW61 A BCW61B BCW61C BCW61D , BCW61D MARK. BA BB BC BD 13 BA ET 520 ELECTRONICS 7e 4m 2 lh DD2SD7


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PDF BCW61A/B/C/D MMBT5086 BCW61 BCW61C BCW61D BCW61B transistor mark BA
2000 - Transistors bd 133

Abstract: BCW61 BCW60C BCW60B BCW60A BCW60 BCW61D BCW61C BCW61B BCW61A
Text: : approx. 0.008g Marking Code: BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD Packaging Codes/Options , , ­IC = Min. TYP. Max. Unit µA µA µA µA BCW61A BCW61B BCW61C BCW61D hFE hFE , BCW61B BCW61C BCW61D hFE hFE hFE hFE 120 180 250 380 ­ ­ ­ ­ 220 310 460 630 ­ ­ ­ ­ BCW61A BCW61B BCW61C BCW61D hFE hFE hFE hFE 60 80 100 110 ­ ­ ­ ­


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PDF BCW61 O-236AB OT-23) 200Hz BCW60A BCW60B BCW60C BCW60D Transistors bd 133 BCW60C BCW60B BCW60A BCW60 BCW61D BCW61C BCW61B BCW61A
2002 - BCW61 series

Abstract: Transistors bd 133 BCW61D BCW61C BCW61B BCW61A BCW61 BCW60C BCW60B BCW60A
Text: BB BCW61C = BC BCW61D = BD Packaging Codes/Options: E8/10K per 13" reel (8mm tape), 30K/box E9 , BCW61D hFE hFE hFE hFE ­ 30 40 100 ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ mA mA mA mA BCW61A BCW61B BCW61C BCW61D hFE hFE hFE hFE 120 180 250 380 ­ ­ ­ ­ 220 310 460 630 ­ ­ ­ ­ BCW61A BCW61B BCW61C BCW61D hFE hFE hFE hFE 60 80 100


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PDF BCW61 O-236AB OT-23) 200Hz BCW60A BCW60B BCW60C BCW60D 09-May-02 BCW61 series Transistors bd 133 BCW61D BCW61C BCW61B BCW61A BCW60C BCW60B BCW60A
2001 - BCW61A

Abstract: BCW61B BCW61C BCW61D BCw6
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P­N­P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLINE DETAILS ALL , BCW61B BCW61C BCW61D RATINGS (at TA = 25°C unless otherwise specified) Limiting values , . max. ­55 to max. Data Sheet Page 2 of 3 BCW61A BCW61B BCW61C BCW61D A Reverse voltage


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PDF OT-23 BCW61A BCW61B BCW61C BCW61D BCW61A BCW61C C-120 BCW61B BCW61D BCw6
2001 - BCW61A

Abstract: BCW61B BCW61C BCW61D
Text: BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P­N­P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m , . max. V V mA mW °C typ. 2 dB Page 1 of 3 BCW61A BCW61B BCW61C BCW61D RATINGS , of 3 BCW61A BCW61B BCW61C BCW61D A Reverse voltage transfer ratio ­VCE = 5 V; ­IC: 2 mA; f


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PDF OT-23 BCW61A BCW61B BCW61C BCW61D BCW61A BCW61C C-120 BCW61B BCW61D
313 Motorola

Abstract: BCW61D BCW61C BCW61B BCW61A BCW60D BCW60C BCW60B BCW60A 6-SOT-23 marking 27
Text: ; BCW61D - BP ELECTRICAL CHARACTERISTICS [TA = 25°C unless otherwise noted.) 96D 81949 P — Tilo? BCW61A, BCW61B BCW61C, BCW61D CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR , Gain hFE _ (lc =10 nMc, Vce = 5.0 Vdc) BCW61A 20 — BCW61B 30 — BCW61C 40 — BCW61D , BCW61D 380 630 (lc = 50 mAdc, VCE = 1.0 Vdc) BCW61A 60 _ BCW61B 80 _ BCW61C 100 - • BCW61D 100 — AC Current Gain hfe _ dC = 2.0 mAdc, Vce = 5.0 Vdc, f = 1.0 kHz) BCW61A 125 250


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PDF 62Adc, BCW61A, BCW61B, BCW61C, BCW61D b3b72SM 313 Motorola BCW61D BCW61C BCW61B BCW61A BCW60D BCW60C BCW60B BCW60A 6-SOT-23 marking 27
1997 - BCW61D

Abstract: BCW60 BCW61 BCW61A BCW61B BCW61C mv marketing code sot23
Text: BCW61B BCp BCW61D 2 BBp BCW61C 1 BDp Top view MAM256 Fig.1 Simplified , BCW61A 120 220 BCW61B 180 310 BCW61C 250 460 BCW61D fT transition , 220 BCW61B 180 - 310 BCW61C 250 - 460 BCW61D 380 - 630 BCW61A 60 - - BCW61B 80 - - BCW61C 100 - - BCW61D 110 - - -60 , -10 µA; VCE = -5 V BCW61D hFE hFE VCEsat DC current gain DC current gain IC = -2 mA


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PDF M3D088 BCW61 BCW60. BCW61A BCW61B BCW61D. SCA54 117047/00/02/pp8 BCW61D BCW60 BCW61A BCW61B BCW61C mv marketing code sot23
Not Available

Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLINE , Page 1 of 3 BCW61A BCW61B BCW61C BCW61D RATINGS (at T A = 25°C unless otherwise specified , BCW61A BCW61B BCW61C BCW61D A Reverse voltage transfer ratio –VCE = 5 V; –IC: 2 mA; f = 1 kHz


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PDF OT-23 BCW61A BCW61B BCW61C BCW61D BCW61A BCW61C C-120
Not Available

Abstract: No abstract text available
Text: BCW61B BCW61C BCW61D w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON , , low noise applications. MARKING CODES: BCW61B : BB BCW61C : BC BCW61D : BD SOT-23 CASE MAXIMUM , 150 800 dB ns ns BCW61C MIN MAX 40 250 460 100 250 500 BCW61D MIN MAX 100 380 630 100 350 700 R2 (20-November 2009) BCW61B BCW61C BCW61D SURFACE MOUNT PNP SILICON , CODES: BCW61B : BCW61C : BCW61D : BB BC BD R2 (20-November 2009) w w w. c e n t r a l s e


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PDF BCW61B BCW61C BCW61D BCW61B OT-23
1998 - BCW61A

Abstract: transistor mark BA transistor BC 310 BCW61C transistor BC 55 BCW61D ks5086
Text: Cut-off Current DC Current Gain :BCW61B BCW61C BCW61D BCW61A BCW61B BCW61C BCW61D BCW61A BCW61B BCW61C BCW61D Collector-Emitter Saturation Voltage BVCEO BVEBO ICES hFE Base-Emitter , BCW61D MARK. BA BB BC BD Samsung Electronics


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PDF BCW61A/B/C/D OT-23 KS5086 BCW61B BCW61C BCW61D BCW61A BCW61A transistor mark BA transistor BC 310 BCW61C transistor BC 55 BCW61D
1999 - BCW61A

Abstract: marking BA RT TRANSISTOR PNP BA RT SOT 89 BCW61B BCW61C BCW61D
Text: Voltage Collector Cut-off Current DC Current Gain : BCW61B : BCW61C : BCW61D : BCW61A : BCW61B : BCW61C : BCW61D : BCW61A : BCW61B : BCW61C : BCW61D Collector-Emitter Saturation Voltage IC , TYPE BCW61A BCW61B BCW61C BCW61D MARK. BA BB BC BD TRADEMARKS The


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PDF BCW61A/B/C/D OT-23 KS5086 BCW61A marking BA RT TRANSISTOR PNP BA RT SOT 89 BCW61B BCW61C BCW61D
Not Available

Abstract: No abstract text available
Text: BCW61A BCW61B BCW61C BCW61D IL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLIN E DETAILS A LL DIM EN SION S IN mm 3.0 2.8 0.14 0.48 0.38 3 2.6 2A Pin configuration 1 = BASE 2 = , mW °C BCW61A BCW61B BCW61C BCW61D RATIN GS (at Ta = 25°C unless otherwise specified , BCW61B BCW61C BCW61D A B C D typ. 1,5 2 2 3 hfe min. max. 125 250


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PDF BCW61A BCW61B BCW61C BCW61D BCW61A BCW61C
transistor smd marking BA

Abstract: transistor smd marking bb transistor smd marking BA sot-23 BCW61B transistor BC 550 transistor smd marking BC TRANSISTOR BC 550 b smd TRANSISTOR marking ku MARKING SMD PNP TRANSISTOR transistor smd sot-23 marking BA
Text: BCW61C 30 hFE IC = -10ìA; VCE = -5 V 40 BCW61D BCW61B DC current gain 100 180 310 250 460 380 630 BCW61C hFE IC = -2 mA; VCE = -5 V BCW61D BCW61B DC current gain BCW61C 80 hFE IC = -50 mA; VCE = -5 V BCW61D 100 110 -60 -250 mV -120 -550 , BCW61C BCW61D Marking 2 BCW61A BA BB BC BD www.kexin.com.cn -650 100


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PDF BCW61A/B/C/D OT-23 BCW61B BCW61C BCW61D BCW61A transistor smd marking BA transistor smd marking bb transistor smd marking BA sot-23 BCW61B transistor BC 550 transistor smd marking BC TRANSISTOR BC 550 b smd TRANSISTOR marking ku MARKING SMD PNP TRANSISTOR transistor smd sot-23 marking BA
25CC

Abstract: BCW61A BCW61B BCW61C BCW61D
Text: BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 0.60 0.40 3.0_ 2.8 0.48 0.38 3 , BCW61B BCW61C BCW61D RATINGS (at Ta = 25CC unless otherwise specified) Limiting values , 0DGD7SÛ 340 45 This Material Copyrighted By Its Respective Manufacturer BCW61A BCW61B BCW61C BCW61D D


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PDF BCW61A BCW61B BCW61C BCW61D BCW61A BCW61C 25CC BCW61B BCW61D
61B20

Abstract: No abstract text available
Text: BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN nun 0.1 + Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS , . typ. 32 32 200 250 150 V V mA mW °C 180 M H z 2 dB 44 BCW61A BCW61B BCW61C BCW61D , BCW61C BCW61D B 2 C 2 D 3 io - hfe min. max. typ. 125 250 18 175 350 24 250 500


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PDF BCW61A BCW61B BCW61C BCW61D BCW61A BCW61B BCW61C 61B20
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