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BCW60A datasheet (58)

Part Manufacturer Description Type PDF
BCW60A Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
BCW60A Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
BCW60A Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original PDF
BCW60A General Semiconductor General Purpose Bipolar Transistor, NPN, 32V, SOT-23, 3-Pin Original PDF
BCW60A Infineon Technologies NPN Silicon AF Transistor Original PDF
BCW60A Infineon Technologies SOT23 package Original PDF
BCW60A Kexin NPN General Purpose Transistors Original PDF
BCW60A Philips Semiconductors Small-signal Transistors Original PDF
BCW60A Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
BCW60A Siemens NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) Original PDF
BCW60A TY Semiconductor NPN General Purpose Transistors - SOT-23 Original PDF
BCW60A Vishay Telefunken Small Signal Transistors (PNP) Original PDF
BCW60A Zetex Semiconductors SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS Original PDF
BCW60A Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan PDF
BCW60A Continental Device India Silicon Planar Epitaxial Transistor Scan PDF
BCW60A Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan PDF
BCW60A Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
BCW60A Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan PDF
BCW60A ITT Semiconductors NPN Silicon Epitaxial Planar Transistors Scan PDF
BCW60A Motorola PNP silicon general purpose transistor. Scan PDF

BCW60A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
smd marking AA

Abstract: BCW60B BCW60D transistor smd marking AD BCW60A BCW60C smd transistor marking 5K
Text: Transistors IC SMD Type NPN General Purpose Transistors BCW60A /B/C/D SOT-23 Unit: mm , 1 Transistors IC SMD Type BCW60A /B/C/D Electrical Characteristics Ta = 25 Parameter , BCW60B 20 VCE=5V, IC=10ìA BCW60C 40 BCW60D 100 BCW60A 120 220 180 310 250 460 BCW60D 380 630 BCW60A 60 BCW60B DC Current Gain BCW60C VCE=5V, IC , =1mA 150 ns VBB=3.6V, IB2=1mA R1=R2=5K , RL=990 800 ns TYPE BCW60A BCW60B BCW60C


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PDF BCW60A/B/C/D OT-23 BCW60A BCW60B BCW60C BCW60D smd marking AA BCW60B BCW60D transistor smd marking AD BCW60A BCW60C smd transistor marking 5K
Not Available

Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification BCW60A /B/C/D SOT-23 Unit: mm +0.1 , specification BCW60A /B/C/D Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min , =10ìA BCW60C 40 BCW60D 100 BCW60A 120 220 180 310 250 460 BCW60D 380 630 BCW60A 60 BCW60B DC Current Gain BCW60C VCE=5V, IC=2mA hFE BCW60B 70 VCE=1V, IC , =1mA R1=R2=5K , RL=990 800 ns Marking TYPE BCW60A BCW60B BCW60C BCW60D Marking AA


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PDF BCW60A/B/C/D OT-23 BCW60A BCW60B BCW60C BCW60D
BCW60A

Abstract: BCW60B BCW60C BCW60D
Text:  BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors Marking BCW60A = AA BCW60B '= AB BCW60C = AC PACKAGE OUTLINE DETAILS BCW60D = AD ALL DIMENSIONS IN mm , 00007SS b31 ■BCW60A BCW60B BCW60C BCW60D RATINGS (at Ta = 25°C unless otherwise specified , 2 kQ typ. 2 dB IC = 200 |j.|iA; VCE = 5 V; f: 1 kHz; B = 200 Hz F < 6 dB BCW60A 60B 60C 60D D.C , BCW60A BCW60B BCW60C BCW60D D Reverse voltage transfer ratio Vce = 5 V; IC = 2 mA; f: 1 kHz hre


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PDF BCW60A BCW60B BCW60C BCW60D BCW60A BCW60C 200Hz OGO60 BCW60B BCW60D
2001 - sot 23 mark AD

Abstract: BCW60A BCW60B BCW60C BCW60D
Text: BCW60A /B/C/D BCW60A /B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter , : BCW60A : BCW60B : BCW60C : BCW60D : BCW60A : BCW60B : BCW60C : BCW60D VCE=5V, IC=2mA VCE , BCW60A BCW60B BCW60C BCW60D Mark. AA AB AC AD Marking AA ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BCW60A /B/C/D Electrical Characteristics Ta=25°C unless otherwise noted BCW60A /B/C/D Package Demensions ±0.10 ±0.10 1.30 0.40 ±0.03 2.40


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PDF BCW60A/B/C/D OT-23 sot 23 mark AD BCW60A BCW60B BCW60C BCW60D
2006 - Not Available

Abstract: No abstract text available
Text: BCW60A . BCW60D BCW60A . BCW60D Surface Mount General Purpose Si-Epi-Planar Transistors , Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW60A . BCW60D Collector-Emitter-volt. â , 10 µA 20 20 40 100 140 200 300 460 – – – – BCW60A BCW60B BCW60C , V, IC = 50 mA 2 hFE hFE hFE hFE VCE = 5 V, IC = 2 mA 1 BCW60A BCW60B BCW60C BCW60D BCW60A BCW60B BCW60C BCW60D hFE hFE hFE hFE 50 70 90 100 – – – â


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PDF BCW60A BCW60D OT-23 O-236) UL94V-0 BCW61A
BCW60A

Abstract: BCW60B BCW60C BCW60D BCW61A BCW61D
Text: BCW60A . BCW60D BCW60A . BCW60D Surface Mount General Purpose Si-Epi-Planar Transistors , Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW60A . BCW60D Collector-Emitter-volt. ­ , µA 20 20 40 100 140 200 300 460 ­ ­ ­ ­ BCW60A BCW60B BCW60C BCW60D hFE , mA 2 hFE hFE hFE hFE VCE = 5 V, IC = 2 mA 1 BCW60A BCW60B BCW60C BCW60D BCW60A BCW60B BCW60C BCW60D hFE hFE hFE hFE 50 70 90 100 ­ ­ ­ ­ ­ ­ ­ ­


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PDF BCW60A BCW60D OT-23 O-236) UL94V-0 BCW61A BCW60A BCW60B BCW60C BCW60D BCW61A BCW61D
2002 - BCW60A

Abstract: BCW60B BCW60C BCW60D
Text: BCW60A /B/C/D BCW60A /B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter , : BCW60A : BCW60B : BCW60C : BCW60D : BCW60A : BCW60B : BCW60C : BCW60D VCE=5V, IC=2mA VCE , BCW60A BCW60B BCW60C BCW60D Mark. AA AB AC AD Marking AA ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 BCW60A /B/C/D Electrical Characteristics Ta=25°C unless otherwise noted BCW60A /B/C/D Package Dimensions ±0.10 ±0.10 1.30 0.40 ±0.03 2.40


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PDF BCW60A/B/C/D OT-23 BCW60A BCW60B BCW60C BCW60D
2002 - BCW60D

Abstract: fairchild SOT-23 Mark PC BCW60A BCW60B BCW60C sot 23 mark AD MARKING AB FAIRCHILD
Text: BCW60A /B/C/D BCW60A /B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter , : BCW60A : BCW60B : BCW60C : BCW60D : BCW60A : BCW60B : BCW60C : BCW60D VCE=5V, IC=2mA VCE , BCW60A BCW60B BCW60C BCW60D Mark. AA AB AC AD Marking AA ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 BCW60A /B/C/D Electrical Characteristics Ta=25°C unless otherwise noted BCW60A /B/C/D Package Dimensions SOT-23 Dimensions in Millimeters ©2002


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PDF BCW60A/B/C/D OT-23 BCW60D fairchild SOT-23 Mark PC BCW60A BCW60B BCW60C sot 23 mark AD MARKING AB FAIRCHILD
BCW60A

Abstract: BCW60B BCW60C BCW60D
Text: CDIIL BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC PACKAGE OUTLINE DETAILS BCW60D = AD ALL DIMENSIONS , Vce = 5V; Ic = 200 nA; B = 200Hz F typ. 2 dB 41 BCW60A BCW60B BCW60C BCW60D RATINGS (at Ta = 25 , F < 6 dB D.C. current gain BCW60A 60B 60C 60D VCE = 5 V; IC = 10 |_iA hFE > - 20 40 , typ. BCW60A BCW60B BCW60C BCW60D A B C D 1,5 2 2 3 IO"4 125 175 250 350 250 350 500 700 18 24


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PDF BCW60A BCW60B BCW60C BCW60D BCW60A BCW60C 200Hz BCW60B BCW60D
2000 - BCW60C

Abstract: BCW60B BCW60 BCW60A BCW60D BCW61
Text: . 0.008g Marking Code: BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD Packaging Codes/Options: E8 , . Unit µA µA µA µA BCW60A BCW60B BCW60C BCW60D hFE hFE hFE hFE ­ 20 40 100 ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ mA mA mA mA BCW60A BCW60B BCW60C BCW60D hFE hFE hFE hFE 120 180 250 380 ­ ­ ­ ­ 220 310 460 630 ­ ­ ­ ­ BCW60A BCW60B , , f = 1kHz, B = 200Hz Small Signal Current Gain at VCE = 5V, IC = 2 mA, f = 1.0 kHZ BCW60A


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PDF BCW60 O-236AB OT-23) BCW61 200Hz BCW60A BCW60B BCW60C BCW60D BCW60C BCW60B BCW60A BCW60D
2001 - BCW60A

Abstract: BCW60B BCW60C BCW60D
Text: / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW60A , BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m , fT typ. 250 MHz F typ. 2 dB Page 1 of 3 BCW60A BCW60B BCW60C BCW60D RATINGS , Noise figure at RS = 2 kW IC = 200 m.mA; VCE = 5 V; f: 1 kHz; B = 200 Hz typ. typ. < F BCW60A , hie typ. 2,7 3,6 4,5 7,5 kW Data Sheet Page 2 of 3 BCW60A BCW60B BCW60C


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PDF OT-23 BCW60A BCW60B BCW60C BCW60D BCW60A BCW60C C-120 BCW60B BCW60D
2sc 1948 a

Abstract: No abstract text available
Text: ic Value 32 32 5.0 100 Unit V V V m Adc BCW60A ,B,C,D CASE 318-02/03, STYLE 6 SOT-23 (TO , -5 = 1.0 x 0.75 x 0.62 in. *Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE MARKING BCW60A = AA , hFE BCW60A BCW60B BCW60C BCW60D BCW60A BCW60B BCW60C BCW60D BCW60A BCW60B BCW60C BCW60D hfe BCW60A , BCW60A ,B,C,D E L E C T R IC A L C H A R A C T E R IS T IC S (continued) (Ta = 2S°C unless otherwise


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PDF BCW60A OT-23 O-236AA/AB) r-21-o 2sc 1948 a
2001 - BCW60A

Abstract: BCW60B BCW60C BCW60D
Text: -23 Formed SMD Package BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N­P­N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLINE DETAILS ALL , 250 150 V V mA mW °C fT typ. 250 MHz F typ. 2 dB Page 1 of 3 BCW60A , kHz; B = 200 Hz typ. typ. < F BCW60A 60B VCE = 5 V; IC: 2 mA VCE = 1 V; IC: 50 mA Input , Sheet Page 2 of 3 BCW60A BCW60B BCW60C BCW60D A Reverse voltage transfer ratio VCE = 5 V


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PDF OT-23 BCW60A BCW60B BCW60C BCW60D BCW60A BCW60C 200Hz BCW60B BCW60D
Not Available

Abstract: No abstract text available
Text: BCW60A BCW60B BCW60C BCW60D IL SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors M arking BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLIN E DETAILS A LL , 200 jiA; B = 200Hz 41 V V mA mW °C II BCW60A BCW60B BCW60C BCW60D RA TIN G S (at , > typ. typ. typ. < F BCW60A 8 pF 2 dB 6 dB 60B 60C 60D 20 40 100 D.C , f ft. BCW60A BCW60B BCW60C BCW60D A Reverse voltage transfer ratio V c e = 5 V; I c = 2


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PDF BCW60A BCW60B BCW60C BCW60D BCW60A BCW60C 200Hz
BCW60A

Abstract: BCW60D BCW60B BCW60C transistor mark code AD transistor ad 1v sot 23 mark AD LC marking code transistor
Text:  BCW60A /B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcbO 32 V Collector-Emitter , Gain hFE BCW60B Vce=5V, Ic=10HA 20 BCW60C 40 BCW60D 100 BCW60A Vce=5V, lc=2mA 120 220 BCW60B 180 310 BCW60C 250 460 BCW60D 380 630 BCW60A VCE=1V, lc=50mA 60 , Fairchild Semiconductor Corporation TYPE BCW60A BCW60B BCW60C BCW60D MARK. AA AB AC AD


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PDF BCW60A/B/C/D OT-23 BCW60B BCW60A BCW60B BCW60C BCW60D BCW60D transistor mark code AD transistor ad 1v sot 23 mark AD LC marking code transistor
Not Available

Abstract: No abstract text available
Text: BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N Silicon transistors Marking BCW6QA = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm , . max. typ. typ. 32 32 200 250 150 V V mA mW °C 250 M Hz 2 dB 41 BCW60A BCW60B BCW60C , = 0,5 V Noise figure at Rs = 2 k£l IC = 200 n.p.A; VCE = 5 V; f: 1 kHz; B = 200 Hz BCW60A fr Cc , 630 100 7,5 kii 42 BCW60A BCW60B BCW60C BCW60D A Reverse voltage transfer ratio VCE = 5 V


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PDF BCW60A BCW60B BCW60C BCW60D BCW60B BCW60C 200Hz
2004 - 85116

Abstract: No abstract text available
Text: . 8.8 mg Marking: BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD Packaging Codes/Options: GS18 / 10 k , DC Characteristics Parameter DC current gain Test condition VCE = 5 V, IC = 10 µA Part BCW60A BCW60B BCW60C BCW60D VCE = 5 V, IC = 2 mA BCW60A BCW60B BCW60C BCW60D VCE = 1 V, IC = 50 mA BCW60A BCW60B BCW60C , BCW60A BCW60B BCW60C BCW60D Turn - on time RL = 990 (see fig.1) VCC = 10 V, IC = 10 mA, IB(on) = - IB


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PDF BCW60 BCW61 OT-23 BCW60A BCW60B BCW60C BCW60D D-74025 19-Aug-04 85116
marking code ACP transistor

Abstract: marking code AAp BCW60C
Text: series. MARKING TYPE NUMBER BCW60A BCW60B BCW60C BCW60D QUICK REFERENCE DATA SYMBOL V cBO V CEO 'CM , voltage peak collector current total power dissipation DC current gain BCW60A BCW60B BCW60C BCW60D , BCW60D hFE DC current gain BCW60A BCW60B BCW60C BCW60D Hfe DC current gain BCW60A BCW60B BCW60C BCW60D


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PDF BCW61 BCW60A BCW60B BCW60C BCW60D BCW60 marking code ACP transistor marking code AAp
Not Available

Abstract: No abstract text available
Text: BCW60A /B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (TA =25°C) C haracteristic Sym bol Collector-Base Voltage , Emitter Cut-off Current DC Current Gain : BCW60B : BCW60C : BCW60D : BCW60A : BCW60B : BCW60C : BCW60D : BCW60A : BCW60B : BCW60C : BCW60D Collector-Emitter Saturation Voltage VcE(sat , BCW60A BCW60B BCW 60C BCW 60D MARK. AA AB AC AD 0 -0 ©1999 Fairchild


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PDF BCW60A/B/C/D OT-23 BCW60B BCW60C BCW60D BCW60A
313 Motorola

Abstract: BCW61D BCW61C BCW61B BCW61A BCW60D BCW60C BCW60B BCW60A 6-SOT-23 marking 27
Text: MARKING_ | BCW60A - AA; BCW60B = AB; BCW60C = AC; BCW60D = AD ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) 96D 81947^ D _ - T'Zl O? BCW60A ,B,C,D CASE 318-02/03, STYLE 6 SOT-23 (TO , 10 jiAdc, Vce = 5.0 Vdc) BCW60A 20 — BCW60B 30 — BCW60C 40 — BCW60D 100 — dC = 2.0 mAdc, Vce = 5.0 Vdc) BCW60A 120 220 BCW60B 175 310 BCW60C 250 460 BCW60D 380 630 (IC = 50 mAdc, Vce = 10 Vdc) BCW60A 60 _ BCW60B 70 — BCW60C 90 — BCW60D 100 — AC


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PDF 62Adc, BCW61A, BCW61B, BCW61C, BCW61D b3b72SM 313 Motorola BCW61D BCW61C BCW61B BCW61A BCW60D BCW60C BCW60B BCW60A 6-SOT-23 marking 27
Not Available

Abstract: No abstract text available
Text: Unit V V V mAdc >C BCW60ALT1 BCW60BLT1 BCW60DLT1 CASE 318-07, STYLE 6 SOT-23 (TO-236AB) Unit , 0.75 x 0.062 in. * Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. DEVICE M A RKING BCW60ALT1 = AA , vdc) ^FE BCW60A BCW60B BCW60D BCW60A BCW60B BCW60D BCW60A BCW60B BCW60D BCW60A BCW60B BCW60D VCE(sat , (on) 0.6 2-120 Motorola Small-Signal Transistors, FETs and Diodes Device Data BCW60ALT1


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PDF BCW60ALT1 BCW60BLT1 BCW60DLT1 OT-23 O-236AB)
Not Available

Abstract: No abstract text available
Text: CDU BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors Marking BCW60A = AA BCW60B '= AB BCW60C = AC BCW60D = AD PACKAG E O UTLIN E DETAILS ALL , 2303314 QGQQ7SM 7TS V V mA mW °C 2303314 D0DQ7SS b31 BCW60A BCW60B BCW60C BCW60D RATINGS , = 2 mA, f = 1 kHz 60B 60C 60D 20 BCW60A D.C. current gain VCE = 5 V; IC = 10 (lA , BCW60A BCW60B BCW60C BCW60D A B C D typ. 1,5 2 2 3 Reverse voltage


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PDF BCW60A BCW60B BCW60C BCW60D BCW60A BCW60C
2002 - BCW60 series

Abstract: BCW60C BCW60D BCW60 BCW60A BCW60B BCW61
Text: Maximum Ratings & Thermal Characteristics Parameter BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD , BCW60A BCW60B BCW60C BCW60D hFE hFE hFE hFE ­ 20 40 100 ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ mA mA mA mA BCW60A BCW60B BCW60C BCW60D hFE hFE hFE hFE 120 180 250 380 ­ ­ ­ ­ 220 310 460 630 ­ ­ ­ ­ BCW60A BCW60B BCW60C BCW60D hFE hFE , www.vishay.com 2 BCW60A BCW60B BCW60C BCW60D Document Number 88170 09-May-02 BCW60 Series Vishay


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PDF BCW60 O-236AB OT-23) OT-23 BCW60A BCW60B BCW60C BCW60D 09-May-02 BCW60 series BCW60C BCW60D BCW60A BCW60B BCW61
Not Available

Abstract: No abstract text available
Text: -23 Formed SMD Package BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLINE , BCW60A BCW60B BCW60C BCW60D RATINGS (at T A = 25°C unless otherwise specified) Limiting values , fT > typ . 125 MHz 250 MHz Cc typ . 2,5 pF Ce typ . typ . < F BCW60A 60B , 3,6 4,5 7,5 kW Data Sheet Page 2 of 3 BCW60A BCW60B BCW60C BCW60D A Reverse


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PDF OT-23 BCW60A BCW60B BCW60C BCW60D BCW60A BCW60C 200Hz
1997 - h12e

Abstract: BCW60DR CR SOT23 power 22E BCW60C BCW60BR BCW60B BCW60AR BCW60A DSA003672
Text: BCW60AR BCW60BR BCW60CR BCW60DR CR DR AR BR SYMBOL MIN. Collector-Emitter Breakdown , BCW60C 145 250 MAX. BCW60 PARAMETER Static BCW60A Forward Current Transfer BCW60B Ratio TYP. ISSUE 2 AUGUST 1995 PARTMARKING DETAILS BCW60A AA BCW60B AB BCW60C AC BCW60D , °C unless otherwise stated). UNIT CONDITIONS. 32 V IC=2mA 5 V IEBO =1µA BCW60AR , BCW60C 145 250 MAX. BCW60 PARAMETER Static BCW60A Forward Current Transfer BCW60B


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PDF BCW60 BCW60AR BCW60BR BCW60CR BCW60DR 150oC 200Hz h12e BCW60DR CR SOT23 power 22E BCW60C BCW60BR BCW60B BCW60AR BCW60A DSA003672
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