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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
BCW-32 Philips Semiconductors Bristol Electronics - -
BCW32 NXP Semiconductors Bristol Electronics 1,295 $0.10 $0.02
BCW32 Nexperia element14 Asia-Pacific 0 $0.16 $0.04
BCW32 Nexperia element14 Asia-Pacific 0 $0.16 $0.04
BCW32 Philips Semiconductors Chip One Exchange - -
BCW32 Nexperia Farnell element14 0 £0.13 £0.02
BCW32 Philips Semiconductors Bristol Electronics 75,000 $0.10 $0.01
BCW32 Rochester Electronics - -
BCW32 Philips Semiconductors Bristol Electronics - -
BCW32_NL Rochester Electronics - -
BCW32_Q Rochester Electronics - -
BCW32,215 Nexperia Avnet 0 $0.04 $0.03
BCW32,215 NEXPERIA RS Components 190,000 £0.04 £0.02
BCW32,215 Nexperia element14 Asia-Pacific 0 $0.03 $0.02
BCW32,215 Nexperia Future Electronics 0 $0.04 $0.04
BCW32,215 Philips Semiconductors Bristol Electronics - -
BCW32,215 Nexperia Avnet 0 $0.02 $0.02
BCW32,235 Nexperia Avnet 0 $0.02 $0.02
BCW32215 NXP Semiconductors Rochester Electronics 207,000 $0.04 $0.03
BCW32LT1 ON Semiconductor Wuhan P&S 4,000 $0.02 $0.02
BCW32LT1 ON Semiconductor Rochester Electronics 423,000 $0.04 $0.03
BCW32LT1 ON Semiconductor Bristol Electronics - -
BCW32LT1G ON Semiconductor Farnell element14 1,642 £0.10 £0.02
BCW32LT1G ON Semiconductor Future Electronics 0 $0.03 $0.02
BCW32LT1G ON Semiconductor Future Electronics 0 $0.01 $0.01
BCW32LT1G ON Semiconductor Avnet 0 $0.01 $0.01
BCW32LT1G ON Semiconductor RS Components 22,500 £0.01 £0.01
BCW32LT1G ON Semiconductor Allied Electronics & Automation 0 $0.05 $0.05
BCW32LT1G ON Semiconductor Newark element14 4,454 $0.02 $0.02
BCW32LT1G ON Semiconductor Rochester Electronics 471,000 $0.02 $0.02
BCW32LT1G ON Semiconductor element14 Asia-Pacific 1,797 $0.10 $0.02
BCW32LT1G ON Semiconductor Chip1Stop 2,500 $0.05 $0.02
BCW32LT1G ON Semiconductor element14 Asia-Pacific 0 $0.04 $0.02
BCW32LT1G ON SEMICONDUCTOR New Advantage Corporation 3,000 $0.04 $0.04
BCW32LT1G ON Semiconductor Avnet 0 $0.03 $0.03
BCW32LT1G ON Semiconductor element14 Asia-Pacific 1,797 $0.10 $0.02
BCW32T116 ROHM Semiconductor Avnet 0 $0.05 $0.04
BCW32X Rochester Electronics - -
BCW32X_NL Rochester Electronics - -
BCW32X_Q Rochester Electronics - -
NSVBCW32LT1G ON Semiconductor Avnet 0 $0.05 $0.04
SSTBCW32A Unknown Bristol Electronics - -

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BCW32 datasheet (76)

Part Manufacturer Description Type PDF
BCW32 Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
BCW32 Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
BCW32 Kexin NPN General Purpose Transistors Original PDF
BCW32 Korea Electronics General Purpose Transistor Original PDF
BCW32 Philips Semiconductors Small-signal Transistors Original PDF
BCW32 Philips Semiconductors NPN general purpose transistors Original PDF
BCW32 Philips Semiconductors NPN general purpose transistors Original PDF
BCW32 Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
BCW32 Philips Semiconductors Silicon Planar Epitaxial Transistor Original PDF
BCW32 TY Semiconductor NPN General Purpose Transistors - SOT-23 Original PDF
BCW32 Continental Device India Silicon Planar Epitaxial Transistor Scan PDF
BCW32 Continental Device India SOT-23 Transistors & Diodes Data Book 1995 Scan PDF
BCW32 Ferranti Semiconductors SOT-23 Transistors & Diodes 1983 Scan PDF
BCW32 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
BCW32 Ferranti Semiconductors Micro-Miniature Semiconductors and Silicon Networks 1977 Scan PDF
BCW32 Korea Electronics General Purpose Transistor Scan PDF
BCW32 Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan PDF
BCW32 Korea Electronics Transistors Scan PDF
BCW32 Motorola European Master Selection Guide 1986 Scan PDF
BCW32 Others Semiconductor Master Cross Reference Guide Scan PDF

BCW32 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - BCW32

Abstract:
Text: DISCRETE SEMICONDUCTORS DAT BCW31; BCW32 ; BCW33 NPN general purpose transistors Product , BCW31; BCW32 ; BCW33 NPN general purpose transistors PINNING FEATURES • Low current (100 mA , NUMBER MARKING CODE(1) BCW31 D1* BCW32 D2* BCW33 D3* 1 2 2 Top view , ˆ’ DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 BCW32 BCW33 LIMITING VALUES , transistors BCW31; BCW32 ; BCW33 THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS


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PDF BCW31; BCW32; BCW33 BCW29 BCW30. BCW31 BCW32 BCW32
1997 - BCW33

Abstract:
Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 - JUNE 1995 PARTMARKING DETAILS COMPLEMENTARY TYPES BCW31 D1 BCW32 D2 BCW33 D3 BCW31 BCW32 BCW33 BCW31R D4 BCW32R D5 BCW33R D6 E C BCW31 - BCW29 BCW32 - BCW30 BCW33 - N/A B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 32 V Collector-Emitter , Saturation Voltage VBE(SAT) 750 850 Collector- Base Cut-Off Current ICBO BCW31 BCW32 hFE


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PDF BCW31 BCW32 BCW33 BCW31R BCW32R BCW33R BCW31 BCW33 BCW32 BCW32R BCW33R BCW31R BCW32R-D5 BCW31R-D4 BCW31-D1 BCW30
BCW32R

Abstract:
Text: ° max BCW31 = D1 BCW32 = D2 BCW33 = D3 BCW31R = D4 BCW32R = D5 BCW33R = D6 R-types are available on , Copyrighted By Its Respective Manufacturer BCW31 N AMER PHILIPS/DISCRETE BCW32"" BCW33 OLE D bt,S3T31 , Hz BCW31 BCW32 BCW33 hFE " > < 110 220 200 450 420 800 VCBO VCEO 'CM max. max. max. 32 32 200 , b 3 2 S BCW32 BCW33 RATINGS Limiting values in accordance with the Absolute Maximum System , = 200 Hz □ bE D BCW31;R BCW32 ;R BCW33;R h BCW31 BCW32 BCW33 hFE typ. 90 150 270 hFE


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PDF BCW31 BCW32 BCW33 G015b37 BCW31 BCW32 BCW32R BCW33 IEC134 BCW33R BCW32R-D5 BCW31R-D4 BCW31R N4100
2001 - BCW32

Abstract:
Text: -23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N­P­N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BCW31 BCW32 , Page 1 of 3 BCW31 BCW32 BCW33 RATINGS (at TA = 25°C unless otherwise specified) Limiting , V IC = 2 mA; VCE = 5 V 210 mV 850 mV BCW31 BCW32 BCW33 hFE hFE Collector capacitance


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PDF OT-23 BCW31 BCW32 BCW33 BCW31 BCW32 BCW33
BCW32

Abstract:
Text: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 0.60 0.40 , Noise figure at Rs = 2 kQ IC = 200 |iA; VCE = 5 V; f = 1 kHz; B = 200 Hz BCW31 BCW32 BCW33 > 110 , Respective Manufacturer BCW31 BCW32 BCW33 RATINGS (at Ta = 25°C unless otherwise specified) Limiting , VBEsat typ. 850 mV D.C. current gain BCW31 BCW32 BCW33 lC = 10 |xA, Vce = 5 V hFE typ. 90 150 270


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PDF BCW31 BCW32 BCW33 BCW31 BCW32 BCW33 33T4
Not Available

Abstract:
Text: Philips Semiconductors Product specification NPN general purpose transistors BCW31 ; BCW32 , and BCW30. 3 1 MARKING TYPE NUMBER MARKING CODE<1> BCW31 BCW32 D2* BCW33 2 , Philips Semiconductors Product specification NPN general purpose transistors BCW31 ; BCW32 ; BCW33 , = 0; V qb = 32 V BCW31 BCW32 150 BCW33 270 DC current gain lc = 2 mA; VCE = 5 V BCW31 110 BCW32 200 450 BCW33 420 800 - 220 collector-emitter saturation


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PDF BCW31 BCW32; BCW33 BCW29 BCW30. BCW32 MAM255
Not Available

Abstract:
Text: IL BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0.14 Pin , |lA; VCE = 5 V; f = 1 kHz; B = 200 Hz hpE VCBO VCEO ICM BCW31 BCW32 BCW33 110 200 420 , °C fl typ. 300 M Hz F < 10 dB Ptot 39 L BCW31 BCW32 BCW33 , 210 mV 850 mV BCW31 BCW32 BCW33 hFE hpE typ. > < Collector capacitance at f = 1 MHz


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PDF BCW31 BCW32 BCW33 BCW31 BCW32
Not Available

Abstract:
Text: voltage (open emitter) 110 220 BCW32 200 450 BCW33 420 800 v CBO max. 32 V , = 200 Hz 0 BCW33 110 220 > < 0 BCW32 90 typ. Collector capacitance at f , BCW31;R BCW32 ;R BCW33;R < m 10 — dB N il i i i i r i i i i i j 2 0 0 T a m b (°C , PHILIPS/DISCRETE ObE D n BCW31 BCW32 BCW33 Fig. 7. Fig. 8. August 1980 281 BCW31 N AHER^'p HILIPS/DISCRETE BCW32 BCW33 DtE D ■bt.S3 T 31 0 0 1 Sb 3 b T ■r-tf-W


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PDF D015b31 BCW31 BCW33 BCW32 bhS3T31 0015b34
BCW33

Abstract:
Text: Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BCW31 BCW32 Collector-Emitter-volt. ­ , µA BCW31 BCW32 BCW33 hFE hFE hFE ­ ­ ­ 90 150 270 ­ ­ ­ VCE = 5 V, IC = 2 mA BCW31 BCW32 BCW33 hFE hFE hFE 110 200 420 ­ ­ ­ 220 450 800 ­ ­ , , BCW30 BCW31 = D1 BCW32 = D2 BCW33 = D3 Tested with pulses tp = 300 µs, duty cycle 2% ­ Gemessen


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PDF BCW31 BCW33 OT-23 O-236) UL94V-0 BCW32 BCW29, BCW33 BCW29 BCW30 BCW31 BCW32
Not Available

Abstract:
Text: BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 , Q0QQ752 39 10 J JT Ld JJ Ptot LkJ U! 8> ru BCW31 BCW32 BCW33 200 110 420 , ; f = 1 kHz; B = 200 Hz 1 > < max. max. max. ■dB CDIL BCW31 BCW32 BCW33 , mV BCW31 BCW32 BCW33 D.C. current gain i c = io nA, v Ce = 5 v IC = 2 mA; V CE = 5 V hpE


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PDF BCW31 BCW32 BCW33 BCW31 Q0QQ752 BCW32
2002 - Not Available

Abstract:
Text: BCW32 BCW32 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process 10. 3 2 1 SOT-23 Mark: D2 , Fairchild Semiconductor Corporation Rev. A, August 2002 BCW32 400 Vce = 5V  125 °C 300  , Capacitance vs Reverse Voltage Rev. A, August 2002 BCW32 Typical Characteristics (Continued , ) 125 150 Figure 8. Power Dissipation vs Ambient Temperature Rev. A, August 2002 BCW32


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PDF BCW32 300mA. OT-23
Not Available

Abstract:
Text: Transistors IC SMD Type Product specification BCW31, BCW32 ,BCW33 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 32 V). +0.1 , IC SMD Type Product specification BCW31, BCW32 ,BCW33 Electrical Characteristics Ta = 25 , BCW32 110 200 450 420 BCW33 120 800 Base to emitter saturation voltage VBE(sat , mV mV pF 100 MHz 10 dB hFE Classification TYPE BCW31 BCW32 BCW33


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PDF BCW31 BCW32 BCW33 OT-23 BCW31 BCW32
BCW32

Abstract:
Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 - JUNE 1995 PARTMARKING DETAILS -B C W 3 1 -D 1 BCW32 - D2 BCW33 - D3 COMPLEMENTARY TYPES - BCW31 - BCW29 - BCW32 - BCW30 - BCW33 - N/A BC W 31R -D 4 BCW32R - D5 BCW33R - D6 BCW31 BCW32 BCW33 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector , Forward Current Transfer Ratio BCW32 BCW33 Transition Frequency Collector Capacitance Noise Figure SYMBOL


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PDF BCW32 BCW33 BCW31 BCW29 BCW30 BCW32R BCW33R
smd transistor marking D3

Abstract:
Text: Transistors IC SMD Type NPN General Purpose Transistors BCW31, BCW32 ,BCW33 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 32 V). , printed-circuit board. www.kexin.com.cn 1 Transistors IC SMD Type BCW31, BCW32 ,BCW33 Electrical , BCW31 DC current gain BCW32 110 200 450 420 BCW33 120 800 Base to emitter , Classification TYPE BCW32 BCW33 Marking 2 BCW31 D1 D2 D3 www.kexin.com.cn 550 250


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PDF BCW31 BCW32 BCW33 OT-23 BCW32 BCW31 smd transistor marking D3 BCW33 SMD TRANSISTOR D2 marking D2 SOT-23 smd TRANSISTOR marking ku
2001 - BCW31

Abstract:
Text: / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N­P­N transistors Marking BCW31 = Dl BCW32 = D2 , EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BCW31 BCW32 BCW33 D.C. current gain , BCW31 BCW32 BCW33 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector­base , = 5 V 210 mV 850 mV BCW31 BCW32 BCW33 hFE hFE Collector capacitance at f = 1 MHz IE =


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PDF OT-23 BCW31 BCW32 BCW33 BCW31 BCW32 BCW33
bcw33

Abstract:
Text: n i BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.48 0.14 Ö3B 3 2.6 2 .4 · ^pT59 § 0.70 0.50 Pin configuration 1 = BASE 2 = , . max. max. max. typ. BCW31 BCW32 BCW33 200 420 110 800 450 220 V 32 32 V mA 200 250 150 300 mW °c MHz hFE VCBO VcEO ·c m P lot T) fT F < 10 dB 39 BCW31 BCW32 BCW33 RA TIN G S (at


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PDF BCW31 BCW32 BCW33 BCW31 BCW32 200jiA; bcw33
Not Available

Abstract:
Text: -23 Formed SMD Package BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking BCW31 = Dl BCW32 = D2 BCW33 = D3 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BCW31 BCW32 , Page 1 of 3 BCW31 BCW32 BCW33 RATINGS (at T A = 25°C unless otherwise specified) Limiting , mV 750 mV VCEsat typ . VBEsat typ . IC: 50 mA; lB: 2,5 mA 210 mV 850 mV BCW31 BCW32


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PDF OT-23 BCW31 BCW32 BCW33 BCW31 BCW32
7Z6a

Abstract:
Text: 711002b 0DbflS33 STÛ IPHIN J V BCW31 BCW32 BCW33 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N , = 5 V BCW31 BCW32 BCW33 hFE > < 110 220 200 450 420 800 Collector-base voltage (open emitter , BCW32 I BCW33 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC134 , at Rg = 2 ki2 lc = 200 (iA; VQE = 5V f = 1 kHz; B = 200 Hz hFE fT A BCW31 BCW32 BCW33 BCW31 BCW32 , Philips Semiconductors. BCW31 — 711002b DQtô53b 20? "PHIN BCW32 BCW33 600 400 200 10"2 IO"1 1 10 Ic(mA


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PDF 711002b 0DbflS33 BCW31 BCW32 BCW33 BCW33 7Z6a IEC134 J 449 ScansUX40
BCW32

Abstract:
Text: m bbSBTBl DOSHSb? =114 «APX N AUER PHILIPS/DISCRETE b?E ]> y V. BCW31 BCW32 BCW33 SILICON , juA; VCE = 5 V; f = 1 kHz; B = 200 Hz BCW31 BCW32 BCW33 > 110 200 420 hFE < 220 450 800 vCBO , Copyrighted By Its Respective Manufacturer BCW31 BCW32 BCW33 ■005L»5bfl flSO ■APX N AMER PHILIPS , PHILIPS/DISCRETE b7E D J V BCW31 BCW32 BCW33 D.C. current gain BCW31 BCW32 BCW33 lc=10M, Vce = 5V hFE , BCW32 n AMER PHILIPS/DISCRETE b7E T> BCW33 j _ 600 ■fe 400 200 -2 10 400 V ce sat ImV) 300


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PDF BCW31 BCW32 BCW33 BCW31 BCW32 BCW33 7Z68043 bcw31 bcw32 bcw33 marking code 533-1 IEC134 lg tv system ic 5452N
2004 - BCW29

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET BCW31; BCW32 ; BCW33 NPN general purpose transistors , specification NPN general purpose transistors BCW31; BCW32 ; BCW33 FEATURES PINNING · Low current , TYPE NUMBER MARKING CODE(1) BCW31 D1* BCW32 D2* BCW33 D3* 1 2 2 Top , NAME - DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 BCW32 BCW33 , Philips Semiconductors Product specification NPN general purpose transistors BCW31; BCW32 ; BCW33


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PDF BCW31; BCW32; BCW33 BCW29 BCW30. BCW31 BCW32 BCW30 BCW31 bcw31 bcw32 bcw33 BCW32 BCW33 marking code 10 sot23
1999 - str 450 a

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32 ; BCW33 NPN general , Semiconductors Product specification NPN general purpose transistors BCW31; BCW32 ; BCW33 FEATURES , MARKING MARKING CODE(1) TYPE NUMBER BCW31 BCW32 D2 BCW33 1 D1 2 2 D3 Top , specification NPN general purpose transistors BCW31; BCW32 ; BCW33 THERMAL CHARACTERISTICS SYMBOL Rth , 5 V BCW31 - 90 - BCW32 - 150 - BCW33 - 270 - BCW31 110


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PDF M3D088 BCW31; BCW32; BCW33 BCW29 BCW30. BCW31 str 450 a 05611 datasheet str 6707 BCW30 BCW31 BCW32 BCW33 BP317
BCW31

Abstract:
Text: BCW32 . BCW33 . BCW31R . BCW32R . BCW33R . D1 D2 D3 D4 D5 D6 BCW31/32/33, Page 3 SOT-23 TRANSISTORS & , BCW31 BCW32 BCW33 NPN Silicon Planar Small Signal Transistors DESCRIPTION These devices are , : transfer ratio BCW31 hFE 110 90 220 lc = 10 nA. VCE = 5V lc = 2 mA, VCE = 5V BCW32 hFE 200 150 450 lc , U6 BCW32 D2 D5 BSS65 L1 L5 BCW33 D3 D6 BSS66 M6 M8 BCW60A AA - BSS67 M7 M9 BCW60B AB BSS69 L2 L6 , 300 1110/220 2/5 0.25 10/0.5 300 BCW32 30 20 100 300 200/450 2/5 0.25 10/0.5 300 BCW33 30 20 100 300


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PDF BCW31 BCW32 BCW33 OT-23 BCW31, FMMT5087 BCW69 BCW70 BCX71G BCW31R BCW32R BCV72 ferranti BFQ31A BFQ31 BCW33R BCW33
Not Available

Abstract:
Text: ■BCW31 BCW32 BCW33 bhS3T31 0Q245b7 114 « A P X N AUER PHILIPS/DISCRETE b?E D , 220 BCW32 200 450 BCW 33 420 800 V max. 32 V 'C M max. 200 '’tot , . TOP VIEW April 1991 449 BCW31 BCW32 BCW33 btiS3T31 00545ba flSQ « A P X N AMER PHILIPS , BCW31 BCW32 BCW33 BCW 33 90 150 270 110 220 200 450 4 20 800 Collector , 451 BCW31 BCW32 BCW33 ^ 5 3 1 3 1 0024570 40^ N AMER PHILIPS/DISCRETE _ A _


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PDF BCW31 BCW32 BCW33 bhS3T31 0Q245b7
2009 - bcw33 nxp

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET BCW31; BCW32 ; BCW33 NPN general purpose transistors , sheet BCW31; BCW32 ; BCW33 NPN general purpose transistors FEATURES PINNING · Low current , TYPE NUMBER MARKING CODE(1) BCW31 D1* BCW32 D2* BCW33 D3* 1 2 2 Top , NAME - DESCRIPTION VERSION plastic surface mounted package; 3 leads SOT23 BCW32 BCW33 , NXP Semiconductors Product data sheet NPN general purpose transistors BCW31; BCW32 ; BCW33


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PDF BCW31; BCW32; BCW33 BCW29 BCW30. BCW31 BCW32 bcw33 nxp BCW30 BCW31 BCW32 BCW33 nxp bcw31
2001 - FAIRCHILD SOT-23 MARK 30

Abstract:
Text: BCW31 / BCW32 / BCW33 BCW31 BCW32 BCW33 C E B SOT-23 Mark: D1 / D2 / D3 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at , X 1.5 mm. 2001 Fairchild Semiconductor Corporation BCW31/ BCW32 /BCW33, Rev A (continued , ) 400 BCW31 / BCW32 / BCW33 NPN General Purpose Amplifier (continued) (continued , CTOR CURRENT (nA) - 40 °C 0.8 BCW31 / BCW32 / BCW33 NPN General Purpose Amplifier tr


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PDF BCW31 BCW32 BCW33 BCW31 BCW32 OT-23 FAIRCHILD SOT-23 MARK 30 BCW33
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